JPH0618616A - Measuring method for semiconductor device - Google Patents

Measuring method for semiconductor device

Info

Publication number
JPH0618616A
JPH0618616A JP4178054A JP17805492A JPH0618616A JP H0618616 A JPH0618616 A JP H0618616A JP 4178054 A JP4178054 A JP 4178054A JP 17805492 A JP17805492 A JP 17805492A JP H0618616 A JPH0618616 A JP H0618616A
Authority
JP
Japan
Prior art keywords
semiconductor device
measuring
pin
pressure air
contact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4178054A
Other languages
Japanese (ja)
Inventor
Haruyasu Hayashi
治康 林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP4178054A priority Critical patent/JPH0618616A/en
Publication of JPH0618616A publication Critical patent/JPH0618616A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To obtain the measuring method for a semiconductor device, which can make electrical connection excellent and can maintain continuous stability, in the inspection of electric characteristics. CONSTITUTION:High-pressure air is blown on a measuring head 1, which inspects the electric characteristics of a semiconductor device 2, with a high- pressure air gun 3. Thus, the semiconductor device 2 and the peripheral part of the measuring head 1 for inspecting the electric characteristics are cleaned. The semiconductor device 2 is sucked with a semiconductor-device setting jig 4 and placed on the measuring head 1 for inspecting the electric characteristics. The semiconductor device 2 is pushed with the semiconductor-device setting jig 4. The semiconductor-device setting jig 4 is vibrated. Thus, the surfaces of a contact pin 5 and a lead pin 6 of the semiconductor device are polished so as to obtain the excellent electric contact. Since the surfaces of the contact pin 5 and the lead pin 6 are polished and dust is generated around the measuring set, the high-pressure air is blown with the high-pressure air gun 3.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は半導体装置の電気特性検
査において、電気的接続を良好にし、かつ連続的に安定
性を保つ事を可能にした半導体装置の測定方法に関す
る。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for measuring a semiconductor device, which enables good electrical connection and continuous stability in the inspection of electric characteristics of the semiconductor device.

【0002】[0002]

【従来の技術】近年、半導体装置は小型化が進展しかつ
多ピン化の流れの中でピン間ピッチが狭くなり検査精度
の向上と長期連続で安定に測れる手法等が強く要望され
ている。以下に従来の半導体装置の電気特性検査につい
て説明する。図2は従来の半導体装置の電気特性検査の
一部の図で、図3は図2の半導体装置の斜視図である。
図2,図3において1は半導体装置の電気特性検査する
測定ヘッド、2は半導体装置、4は半導体装置セット治
具、5は半導体装置の電気特性を測定するコンタクトピ
ン、6は半導体装置のリードピンである。
2. Description of the Related Art In recent years, as semiconductor devices have become smaller and the number of pins has increased, the pitch between pins has become narrower, and there has been a strong demand for improved inspection accuracy and a method for stable measurement over a long period of time. The conventional electrical characteristic inspection of the semiconductor device will be described below. FIG. 2 is a view showing a part of an electrical characteristic test of a conventional semiconductor device, and FIG. 3 is a perspective view of the semiconductor device of FIG.
In FIGS. 2 and 3, 1 is a measuring head for inspecting electrical characteristics of a semiconductor device, 2 is a semiconductor device, 4 is a semiconductor device setting jig, 5 is a contact pin for measuring electrical properties of the semiconductor device, and 6 is a lead pin of the semiconductor device. Is.

【0003】このような構成において、半導体装置が電
気的に正しく動作をしているかを検査するには、組み立
てられた半導体装置2を測定ヘッド1に半導体装置セッ
ト治具4でもって、リードピン6をコンタクトピン5に
圧接させ、コンタクトピン5より電気特性検査を行うも
のである。
In order to inspect whether the semiconductor device is electrically operating correctly in such a structure, the assembled semiconductor device 2 is attached to the measuring head 1 with the semiconductor device setting jig 4 and the lead pins 6 are attached. The electrical characteristics are inspected from the contact pin 5 by pressing it against the contact pin 5.

【0004】[0004]

【発明が解決しようとする課題】しかしながら、上記の
従来の構成ではコンタクトピン5が半導体装置のリード
ピン6に接触する際には、半導体装置セット治具4の垂
直面からの加圧しか得られていない。また、従来の半導
体装置のリードピン6とコンタクトピン5の接触時の加
圧条件を検討しても完全に問題を除去しきれず、また周
辺ダスト,金属粉体等の飛散や付着などによって接触不
良、あるいは電気的短絡が発生する事によりの半導体装
置の電気特性検査を正確に、かつ再現性のある条件が設
定出来ないという問題点を有していた。
However, in the above-described conventional structure, when the contact pin 5 contacts the lead pin 6 of the semiconductor device, only the pressure from the vertical surface of the semiconductor device setting jig 4 is obtained. Absent. Further, even if the pressurizing condition at the time of contact between the lead pin 6 and the contact pin 5 of the conventional semiconductor device is examined, the problem cannot be completely removed, and contact failure due to scattering or adhesion of peripheral dust, metal powder, etc. Alternatively, there is a problem in that it is not possible to accurately and reproducibly set the electrical characteristic inspection of the semiconductor device due to the occurrence of an electrical short circuit.

【0005】本発明は上記従来の課題を解決するもの
で、電気特性検査時のコンタクトピンと半導体装置のリ
ードピン間の電気的接触の良好な半導体装置の測定方法
を提供することを目的とする。
The present invention solves the above-mentioned conventional problems, and an object of the present invention is to provide a method for measuring a semiconductor device having good electrical contact between a contact pin and a lead pin of the semiconductor device during an electrical characteristic test.

【0006】[0006]

【課題を解決するための手段】上記目的を達成するため
に本発明は、治具によりリードピンをコンタクトピン上
に圧接して電気特性を検査する半導体装置の測定方法に
おいて、治具によりリードピンおよびコンタクトピンに
振動を与えた後振動を停止させて電気特性を検査する構
成と、その構成に加えて、上記振動時等に発生するダス
トを吹き飛ばすために高圧エアーを吹き付ける構成とに
よる。
In order to achieve the above object, the present invention provides a method for measuring a semiconductor device in which a lead pin is pressed onto a contact pin by a jig to inspect electrical characteristics. The pin is vibrated and then the vibration is stopped to inspect the electrical characteristics. In addition to the constitution, a high-pressure air is blown to blow dust generated during the vibration.

【0007】[0007]

【作用】この構成により、コンタクトピン圧接後、リー
ドピンの接触において振動が起ると、リードピンとコン
タクトピンの電気的接続が良好になり、また高圧エアー
により付着したダスト,金属粉が除去され長期的に安定
した測定状態が保たれる。
With this configuration, when vibration occurs in the contact of the lead pin after the contact pin is pressed, the electrical connection between the lead pin and the contact pin is improved, and the dust and metal powder adhered by the high pressure air are removed for a long time. The stable measurement condition is maintained.

【0008】[0008]

【実施例】以下本発明の一実施例について、図1を参照
しながら説明する。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to FIG.

【0009】図1は本発明の一実施例における半導体装
置の電気特性検査装置の図を示すものである。図1にお
いて、図2,図3の従来例と同一部分には同一番号を付
し、説明を省略する。すなわち本発明の特徴は高圧エア
ーガン3を設けたことと、半導体装置セット治具4が振
動するようにしたことである。
FIG. 1 is a diagram showing an electrical characteristic inspection apparatus for a semiconductor device according to an embodiment of the present invention. In FIG. 1, the same parts as those of the conventional example of FIGS. 2 and 3 are designated by the same reference numerals, and the description thereof will be omitted. That is, the features of the present invention are that the high pressure air gun 3 is provided and the semiconductor device setting jig 4 is made to vibrate.

【0010】以上のように構成された本実施例の半導体
装置の電気特性の測定方法について以下その動作を説明
する。まず半導体装置2の電気特性検査をする測定ヘッ
ド1に高圧エアーガン3で高圧エアーを吹き付け、半導
体装置2および電気特性検査の測定ヘッド1周辺をクリ
ーンにし、半導体装置セット治具4で半導体装置2を吸
引し、半導体装置2を電気特性検査をする測定ヘッド1
にのせ、半導体装置セット治具4で圧接しておき半導体
装置セット治具4を振動させることにより、コンタクト
ピン5とリードピン6の表面が研磨されることにより電
気的接触が良好になる。又コンタクトピン5とリードピ
ン6の表面が研磨される為、測定セット周辺にダストが
発生するが高圧エアーガン3で高圧にエアーを吹き付け
る事により、コンタクトピン5と半導体装置のリードピ
ン6をクリーンにし、リードピン6の接触面が清浄に保
たれかつ、異物が除去されることで、電気的接続不良や
短絡等のトラブルが防げ電気的接触が良好になり安定し
た電気特性検査がおこなわれる。
The operation of the method for measuring the electrical characteristics of the semiconductor device having the above-described structure according to this embodiment will be described below. First, high-pressure air is blown to the measurement head 1 for inspecting the electrical characteristics of the semiconductor device 2 by the high-pressure air gun 3, to clean the semiconductor device 2 and the periphery of the measurement head 1 for the electrical characteristics inspection, and the semiconductor device 2 is set by the semiconductor device setting jig 4. Measuring head 1 for sucking and inspecting semiconductor device 2 for electrical characteristics
On the other hand, the semiconductor device setting jig 4 is kept in pressure contact with the semiconductor device setting jig 4 and the semiconductor device setting jig 4 is vibrated to polish the surfaces of the contact pins 5 and the lead pins 6, thereby improving electrical contact. Also, since the surfaces of the contact pin 5 and the lead pin 6 are polished, dust is generated around the measurement set, but by blowing high pressure air with the high pressure air gun 3, the contact pin 5 and the lead pin 6 of the semiconductor device are cleaned, By keeping the contact surface of 6 clean and removing foreign matter, troubles such as poor electrical connection and short circuit can be prevented, good electrical contact can be obtained, and stable electrical characteristic inspection can be performed.

【0011】[0011]

【発明の効果】以上の実施例から明かなように本発明
は、治具によりリードピンおよびコンタクトピンに振動
を与えた後振動を停止させて電気特性を検査する構成
と、その構成に加えて、上記振動時等に発生するダスト
を吹き飛ばすために高圧エアーを吹き付ける構成とによ
るので、コンタクトピンと半導体装置のリードピンの接
触部の表面が研磨され、ダストも除去されるので、電気
的接触が良好になり、正確にかつ再現性の良好な優れた
半導体装置の測定方法を提供できる。
EFFECTS OF THE INVENTION As is apparent from the above embodiments, according to the present invention, in addition to the structure for inspecting the electrical characteristics by applying vibration to the lead pin and the contact pin by a jig and then stopping the vibration, Since high-pressure air is blown to blow off dust generated during the above-mentioned vibration, the surface of the contact portion between the contact pin and the lead pin of the semiconductor device is polished and dust is also removed, resulting in good electrical contact. It is possible to provide an excellent semiconductor device measuring method that is accurate and has good reproducibility.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の一実施例における半導体装置の測定方
法を示す斜視図
FIG. 1 is a perspective view showing a method for measuring a semiconductor device according to an embodiment of the present invention.

【図2】従来の半導体装置の測定方法を示す断面図FIG. 2 is a sectional view showing a conventional method for measuring a semiconductor device.

【図3】図2の半導体装置の斜視図FIG. 3 is a perspective view of the semiconductor device of FIG.

【符号の説明】[Explanation of symbols]

1 測定ヘッド 2 半導体装置 3 高圧エアーガン(高圧エアー) 4 半導体装置セット治具(治具) 5 コンタクトピン 6 リードピン 1 Measuring Head 2 Semiconductor Device 3 High Pressure Air Gun (High Pressure Air) 4 Semiconductor Device Setting Jig (Jig) 5 Contact Pin 6 Lead Pin

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 治具によりリードピンをコンタクトピン
上に圧接して電気特性を検査する半導体装置の測定方法
において、前記治具により前記リードピンおよびコンタ
クトピンに振動を与えた後振動を停止させて電気特性を
検査することを特徴とする半導体装置の測定方法。
1. A method for measuring a semiconductor device in which a lead pin is pressed onto a contact pin with a jig to inspect electrical characteristics, and the jig is vibrated to the lead pin and the contact pin, and then vibration is stopped to stop the electric characteristic. A method for measuring a semiconductor device, which comprises inspecting characteristics.
【請求項2】 治具によりリードピンをコンタクトピン
上に圧接して電気特性を検査する半導体装置の測定方法
において、高圧エアーを前記リードピンおよびその近傍
に吹き付けながら、前記治具により前記リードピンおよ
びコンタクトピンに振動を与えて接触状態をよくした後
電気特性を検査することを特徴とする半導体装置の測定
方法。
2. A method for measuring a semiconductor device, in which a lead pin is pressed onto a contact pin with a jig to inspect electrical characteristics, and high pressure air is blown onto the lead pin and its vicinity while the lead pin and the contact pin are pushed by the jig. A method for measuring a semiconductor device, which comprises inspecting electrical characteristics after applying a vibration to a substrate to improve a contact state.
JP4178054A 1992-07-06 1992-07-06 Measuring method for semiconductor device Pending JPH0618616A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4178054A JPH0618616A (en) 1992-07-06 1992-07-06 Measuring method for semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4178054A JPH0618616A (en) 1992-07-06 1992-07-06 Measuring method for semiconductor device

Publications (1)

Publication Number Publication Date
JPH0618616A true JPH0618616A (en) 1994-01-28

Family

ID=16041800

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4178054A Pending JPH0618616A (en) 1992-07-06 1992-07-06 Measuring method for semiconductor device

Country Status (1)

Country Link
JP (1) JPH0618616A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5151572A (en) * 1989-05-12 1992-09-29 Prevent-A-Crime International, Inc. Method of making a stencil for etching glass
JP2010276621A (en) * 2010-09-14 2010-12-09 Fujitsu Semiconductor Ltd Test device and test method for semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5151572A (en) * 1989-05-12 1992-09-29 Prevent-A-Crime International, Inc. Method of making a stencil for etching glass
JP2010276621A (en) * 2010-09-14 2010-12-09 Fujitsu Semiconductor Ltd Test device and test method for semiconductor device

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