JPH06184733A - Highly corrosion resistant metal and its production and application - Google Patents

Abstract

PURPOSE:To form a metallic film having extremely high purity and excellent corrosion resistance by ionizing metal and separating this metal to a single mass number, then depositing the ions on a substrate so as not to generate sputtering. CONSTITUTION:Powder of Fe2O3 is put into a recess 21 in the bottom of a discharge chamber 20 and while gaseous CCl4 is supplied from a hole for gas introduction of the discharge chamber 20, microwaves are introduced by a magnetron 22 into the discharge chamber 20 to form high-density CCl4 discharge plasma. The Fe2O3 is heated by the discharge plasma and is made into the ions of Fe by a plasma chemical reaction with the CCl4. An ion beam 1 is drawn out through a slit 5 by an acceleration electrode. The Fe ions of 56 mass number are mass separated and are taken out by an electromagnet 28 for 90 deg. deflection mass sepn. The Fe ions are passed through a deceleration lens 27 and the surface of the substrate 2 in a film forming chamber 25 kept under a high vacuum degree is irradiated with these ions from a perpendicular direction. The thin film of the pure iron having >=99.99% purity and the excellent corrosion resistance is formed on the surface of the substrate 2 heated by a heater 26.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a novel metallic material having a high corrosion resistance, and more particularly to a manufacturing method, an apparatus therefor, and an application thereof which can be applied for improving the corrosion resistance of a magnetic material and ensuring high reliability of a structural material.

[0002]

2. Description of the Related Art As a method for forming a metal thin film, a plating method (electrodeposition method) using a field effect or a chemical reaction from a solution, a vacuum vapor deposition method for heating a metal of an evaporation source to form a film in a vacuum , There is a sputtering method in which a metal target is tapped with gas particles to form a film. In the case of the electrodeposition method from the solution, the impurity ions in the aqueous solution enter the film and the physical stability is poor, and in the vacuum deposition method, the impurity gas molecules are involved in the deposition process, so that the metal of high purity is obtained. There are technical problems in forming the film. On the other hand, it is known that the ion beam deposition method (IBD method) does not have the problem as in the above method and can form a uniform thin film with a small amount of impurities.

A floating zone melting method (floating zone melting method) is used as a method for improving the purity of metal.
It has been known.

An IBD method is disclosed in JP-A-60-231924.
Japanese Patent Laid-Open No. 61-87871 is known. The former has a purity of 9
A method of evaporating 9.9% Fe as an evaporation source and simultaneously ionizing nitrogen gas and oxygen gas to irradiate a substrate to form an iron magnetic film, the latter is an electron beam or an ion in an organic metal compound or a metal compound vapor. A method of irradiating a beam to deposit the metal or alloy on the surface of the substrate is disclosed.

In the ion source apparatus used in the ion beam metal surface treatment apparatus, the ion implantation apparatus for semiconductor device fabrication, the ion beam deposition apparatus, the accelerator, etc.
Version) "(edited by the 132nd Committee of the Japan Society for the Promotion of Science, published by Nikkan Kogyo Shimbun, 1986), as in the Freeman type ion source described in Fig. 6.26 on page 203. Insert a substance containing an element into a crucible equipped with a heating mechanism, and heat the crucible to generate metal vapor containing the desired metal ion element, and send it to the discharge chamber to create discharge plasma containing metal ions. It is known how to do it.

[0006]

However, in the IBD method, a method of generating a metal ion beam to form a thin film has not been developed, and in order to form a pure metal thin film, a metal for generating a metal ion is required. A plasma chamber with a shape suitable for selecting compounds and extracting metal ions to the substrate side is required.

Further, it is necessary to set the film forming conditions in order to impart corrosion resistance that can withstand practical use.

At present, among metals, iron, for example, is starting to be examined for iron thick films prepared by the float zone method to increase corrosion resistance by high purification, but it is put to practical use as a thin film such as a magnetic head film. Has not reached. As described above, sufficient knowledge has not been obtained regarding a method of forming a metal thin film that is resistant to corrosion, and thus it is difficult to increase the corrosion resistance of the metal thin film that is a basic constituent element of the magnetic film.

Further, in the prior art, in order to stably generate desired metal ions for a long time, a crucible excellent in heat resistance and chemical stability at high temperature is required, and the pressure of metal vapor is kept constant. In order to keep it, it was necessary to control the temperature of the crucible with high precision. As a result, the structure of the ion source device is complicated, the ion source cannot be downsized, and it is difficult to form a high corrosion resistant film.

It is an object of the present invention to provide a metal or alloy having excellent corrosion resistance, a method for manufacturing the same, a manufacturing apparatus therefor, and a magnetic disk device equipped with a magnetic head capable of reading with high sensitivity.

[0011]

The present invention resides in a metal having a single mass number and a purity of 99.99% or more, and a high corrosion resistant metal.

Further, the present invention is a high corrosion resistant metal characterized by a purity of 99.99% or more and a crystal grain size of 5 nm or less.

Further, according to the present invention, in the member having the metal thin film on the surface of the substrate, the thin film is made of a metal having a single mass number or an alloy made of a combination of a plurality of metals having a single mass number. It has high corrosion resistance.

Further, according to the present invention, in the member having the metal thin film on the surface of the substrate, the thin film is deposited on the densest surface in the deposition direction, and the crystal grain size is 0.5 μm or less, which is high corrosion resistance. It is in the member.

Further, the present invention comprises ionizing the metal, separating the ionized metal into a single mass number, and accelerating and depositing the separated single mass number of metal such that sputtering does not occur. It is in the production method of the characteristic high corrosion resistant metal.

Further, the present invention is characterized in that the metal is ionized, the ionized metal is separated into a single mass number, and the mass separated single mass number of metal is accelerated to 1 to 200 eV and deposited. It is in the manufacturing method of highly corrosion resistant metal.

Further, the present invention ionizes a plurality of metals, separates each of the ionized metals into a single mass number, and accelerates the separated single mass number of metals to substantially prevent sputtering. And a method of producing a metal having a high corrosion resistance, characterized in that a plurality of kinds of individual metals having a single mass number are alternately deposited for each same metal.

Further, according to the present invention, in the method for producing a member for forming a metal thin film on the surface of a substrate, ionized metal is separated into a single mass number, and the separated single mass number of metal is substantially sputtered. The method for producing a highly corrosion resistant member is characterized by accelerating so as not to deposit and depositing on the surface of the substrate.

Further, according to the present invention, in the method of manufacturing a member for forming a metal thin film on the surface of a substrate, a method of manufacturing a highly corrosion resistant member characterized by accelerating and depositing ionized metal so that sputtering is not substantially generated. It is in.

The present invention is a metal ion implantation chamber for depositing a metal on a substrate, a discharge chamber for forming the metal ions,
An ion acceleration power source for accelerating the metal ions, an ion beam transport pipe for introducing the accelerated metal ions into the metal ion implantation chamber, an extraction power source for accelerating and introducing the metal ions into the pipe at high speed, 2. An apparatus for producing metal, comprising: a mass separation electromagnet for mass-separating the metal ions introduced in 1 .; and an extraction voltage control lens for decelerating the mass-separated metal ions. The electromagnet has a switching means for switching current, and the metal ion implantation chamber has a substrate holding means for holding the substrate and a heater for heating the substrate.

Further, according to the present invention, on a ceramic substrate, a magnetic shield film, a lower gap film, a domain control film, a magnetoresistive effect film for converting a magnetic signal into an electric signal by using a magnetoresistive effect, a shunt film, A magnetic disk device equipped with a magnetoresistive magnetic head having a pair of electrodes for sequentially passing a signal detection current through a soft film and the magnetoresistive film, wherein at least one of the films has a single mass number. A magnetic disk device is characterized in that it is made of metal, an alloy composed of a plurality of elements, or an alloy or compound having a single mass number.

Further, according to the present invention, a magnetoresistive effect film for converting a magnetic signal into an electric signal by using a magnetoresistive effect, a pair of electrodes for supplying a signal detection current to the magnetoresistive effect film, and A magnetic disk device equipped with a magnetoresistive effect magnetic head having a magnetic domain control layer for controlling magnetic domains of a magnetoresistive film, wherein the magnetoresistive film is made of a metal having a single mass number or a plurality of metals. The magnetic disk device is characterized in that the metal is made of an alloy having a single mass number.

Further, according to the present invention, a magnetoresistive effect film that senses external magnetization and changes the magnetization direction, a pair of electrodes for flowing a current through the magnetoresistive effect film, and a magnetic domain of the magnetoresistive effect film are controlled. A magnetic disk device having a magnetoresistive effect type magnetic head having a magnetic domain control layer for controlling the magnetoresistive effect film, wherein the magnetoresistive effect film is composed of fine crystal grains of granular crystals, and the deposition surface thereof has one desired surface index. A magnetic disk device is characterized by being made of a metal or an alloy.

Further, according to the present invention, a magnetoresistive effect film for converting a magnetic signal into an electric signal by using a magnetoresistive effect, a pair of electrodes for supplying a signal detection current to the magnetoresistive effect film, and A reproducing head portion having a magnetic domain control layer for controlling magnetic domains of the magnetoresistive film; a first magnetic pole; and a second magnetic pole which is in contact with the first magnetic pole on one side and forms a gap on the other side,
A magnetic disk device equipped with a recording / reproducing separated thin-film magnetic head having a coil for winding between the magnetic poles and a recording head portion for converting a current flowing through the coil into a magnetization, which is a basic structure. Resistance effect film is 5-100nm
The magnetic disk device is characterized by being formed of a granular crystal metal or alloy having a thickness of.

[0025]

The present invention is achieved by ionizing metal atoms and then lowering the extraction voltage of the metal ions to the extent that sputtering or implantation does not occur and limiting the gas molecule density around the substrate on which the film is formed.

This ion kinetic energy is 200 eV or less, preferably 10 to 10 when the substrate temperature is near room temperature.
It needs to be 200 eV. Further, gas molecules of the film forming chamber is nitrogen, oxygen, carbon dioxide, water, is composed of such, preferably by reducing these partial pressures i.e. exhaust device 10 ^-4 Pa or less, more preferably 10 ^{- 7} P
Reducing the gas density of a high vacuum of a or less is an important means for producing a highly corrosion resistant metal.

Regarding the alloy production by the IBD method,
It was discovered that alloying occurs by heating during irradiation of metal isotope ions or after irradiation of metal isotope ions. The relationship between the temperature at the time of film formation and the ion kinetic energy is 200 for iron and nickel when the alloy ratio is 1: 4.
It was found that a permalloy film can be formed at 20 to 100 eV at a temperature of ° C. By setting the substrate temperature to 200 to 300 ° C., Fe and Ni of the permalloy material can be alternately deposited within several atomic layers and simultaneously alloyed.

When the mechanism for suppressing the corrosiveness of the metal thin film formed by the above-mentioned means for forming a metal thin film was examined, it was found that the crystal structure of the surface of the metal thin film was composed of only a single crystal orientation plane, and It was found that it was composed of minute crystal aggregates and had few defects.
From these facts, it is considered that the reaction between the anion containing oxygen, water, and halogen, which promotes corrosion, and the metal prevents the invasion of those molecules and ions in the highly ordered surface structure and suppresses the corrosion reaction. To be

In particular, as a specific example of the present invention, an iron thin film is formed on a conductive substrate, and the surface of the iron thin film is substantially composed of (110) planes. Irradiating iron ions on a conductive substrate at an accelerating voltage of ~ 200 V to deposit iron atoms, and selectively ionize one type of iron isotope from iron atoms having iron isotopes. By irradiating a conductive substrate with iron ions of a single mass number at an acceleration voltage of 3 to deposit iron atoms, the density of the gas molecules around the substrate on which the iron atoms are deposited and the atoms other than floating iron are 3 ×. Irradiating iron ions in an atmosphere of 10 ¹² pieces / cm ³ or less to deposit iron atoms,
It can be obtained by setting the temperature of the substrate on which iron ions are irradiated and deposited to 300 ° C. or lower, particularly 200 ° C. or lower.

When the accelerating voltage is increased, granular crystals and columnar crystals are mixed, and in the body-centered cubic lattice, (110) / (11
The smaller the (0) + (211) surface ratio, the greater the amount of corrosion.

The (110) plane ratio is preferably 50% or more, and most preferably the densest plane is 100% in any lattice, but if it is 50 or more, the corrosion resistance is enhanced. Furthermore, after ionizing the isotope of the iron atom,
The extraction voltage of iron ions is reduced to the extent that spattering or implantation does not occur, and the gas molecule density around the substrate on which a film is formed is limited. This ion extraction voltage is 200 V when the substrate temperature is around room temperature.
The following are preferred. Particularly, 10 to 100 V is preferable. The gas molecules in the film forming chamber are nitrogen, oxygen, carbon dioxide, water,
Etc., but reducing the partial pressure of these, that is, reducing the gas density by the exhaust device is an important means for producing highly corrosion resistant iron.

Further, the present invention resides in an apparatus for producing iron ions having a specific mass number by using a magnet.

When the mechanism of suppressing the corrosiveness of the iron thin film formed by the iron thin film forming means was examined, it was found that the crystal structure of the iron thin film surface was a body-centered cubic lattice consisting only of (110) planes, and the iron surface Was composed of minute crystal aggregates of 1 micron or less (especially 0.01 to 0.5 μm), and it was found that there were few defects. from these things,
It is considered that the reaction of anions containing oxygen, water, and halogen with iron, which promotes corrosion, prevents the invasion of those molecules and ions in the highly ordered surface structure and suppresses the corrosion reaction.

Fe ₂ O ₃ , Fe as the Fe ion source
Fe compounds such as ₃ O ₄ , FeCl ₃ and FeOH ₃ are preferable, and CCl ₄ gas is preferable as the carrier gas. The thin film is preferably deposited in an ultrahigh vacuum of 10 ⁻⁴ Pa or higher.

The IBD method of the present invention can form inorganic compounds such as metals, alloys and oxides, nitrides, carbides, etc., but deposits the one with the highest mass number among the elements existing in nature. Preferably. The mass numbers of the main elements with the highest abundance are Mg24, Al27, Si28, T
i48, V51, Cr52, Mn55, Fe56, Ni58,
Cu63, Zr90, Nb93, Mo98, Ru102,
Ag107, Hf180, Ta181 and W184.

The application of the IBD method of the present invention is most effective in forming a magnetoresistive effect film of a magnetoresistive effect type magnetic head. In particular, a Fe--Ni alloy (permalloy) is used as the magnetoresistive effect film. ) Itself, or
An Fe thin film having a high purity and a mass number of 58 and a surface index (110) of 10 nm or less is formed on a permalloy film formed by conventional sputtering, vapor deposition, electroplating or the like by the IBD method of the present invention. .

As another application example, the lower and upper magnetic films of a thin film magnetic head for writing, formation of an upper magnetic film, a winding coil, VLSI
It is effective for forming a barrier layer made of TiN or the like for the electrode wiring having the barrier layer for the contact hole on the Si substrate for use in the application.

[0038]

(Embodiment 1) FIG. 1 is a configuration diagram of an ion beam deposition apparatus for generating a metal ion beam.

The ion source device shown in FIG. 2 is a block diagram of a microwave ion source device for generating iron ions by microwave discharge having an oscillation frequency of 2.45 GHz.

Size 20 made of boron nitride
20m in diameter on the bottom of the discharge chamber 1 of mm × 30mm × 50mm
A concave portion 21 having a depth of 1 mm and a depth of 1 mm is formed, and 50 μm of iron oxide (Fe ₂ O ₃ ) powder 3 having an average particle diameter of 10 μm is formed in the concave portion 21.
0 mg was inserted. A conductive lid 4 was attached to one side of the discharge chamber 4, and an ion extraction slit 5 having an opening size of 2 mm × 50 mm was provided therein. A magnetic field having a magnetic field strength of 900 Gaus is applied to the region of the discharge chamber 4 by the magnetic field coil 6, and carbon tetrachloride is introduced into the discharge chamber 4 through the gas introduction hole 7.
(CCl ₄ ) gas was introduced at 0.5 cc / min.

Microwave power having a frequency of 2.45 GHz and an output of 300 W generated from the magnetron 22 having an oscillation frequency of 2.45 GHz was introduced into the discharge chamber 4 through the waveguide 21. As a result, a high-density carbon tetrachloride (CCl ₄ ) discharge plasma 9 was generated in the discharge chamber 4. The potential of the slit 5 having conductivity is set to +30 by the ion acceleration power supply 15.
The electric potential of the first electrode 11 for extracting ions is set to kV
To −3 kV, and the ion extracting second electrode 13
The ion beam 1 was extracted from the carbon tetrachloride (CCl ₄ ) discharge plasma 9 created in the discharge chamber 4 with the potential of 1 as the ground potential.

The microwave ion source 20 shown in FIG. 2 was attached to the ion implantation apparatus shown in FIG. 1 to deposit the ions generated by the ion source 20. The ion implantation apparatus shown in FIG. 1 includes a microwave ion source 20, a waveguide 21, a magnetron 22, a magnetron power supply (not shown), an ion extraction first electrode 11, an extraction power supply 1 shown in FIG.
2, ion extraction second electrode 13, ion beam transport vacuum pipe 23, 90 ° deflection mass separation electromagnet 28, vacuum exhaust pump 10, ion implantation chamber 25, substrate 2, substrate 2
Heater 26 for heating the substrate, substrate holding means 29, substrate load lock chamber 24 for replacing the substrate 2, lens system 27, insulator 30, reflective high-energy electron diffraction 31, electron gun 32, bulb 33, ion beam monitor. 34, another ion current measuring collector electrode, and an ion current measuring ammeter. The microwave ion source is operated under the conditions shown in FIG. 1, and the ion beam 1 extracted at a accelerating voltage of 30 kV from the carbon tetrachloride (CCl ₄ ) discharge plasma 9 created in the discharge chamber 4 is used as a 90 ° deflection mass separation electromagnet. The magnetic field strength of 28 was scanned to perform mass separation, and the ion current flowing through the collector electrode for ion current measurement was measured, and it was revealed that a ⁵⁶ Fe + ion beam was obtained. Iron oxide (Fe) inserted in the discharge chamber 4 of the ion source
₂ O ₃₎ powder 3 with CCl ₄ gas introduced from the gas introducing hole 7 is heated by a high density of carbon tetrachloride (CCl ₄₎ discharge plasma 9, heated iron oxide (Fe
⁵⁶ Fe + ions were generated in the ₂ O ₃ ) powder 3 by the plasma chemical reaction with the CCl ₄ gas plasma.

In this example, Fe ₂ O ₃ powder was used to generate iron ions, but an oxide (Fe ₃ O ₃ ) having another structure was used.
O ₄ , FeO ₂ etc.), iron carbides (FeC etc.), halides (FeCl ₂ , FeCl ₃ , FeCl ₂ .H ₂ O etc.), hydroxides (Fe (OH) ₃ etc.), metal nitrides ( Fe
Etc. N _4), an organometallic compound (Fe (OCH _3), etc. _3), a metal alloy material (Fe-Zr, etc. FeS ₂₎ even has the same effect, it may be used these materials.

First, in the ion source 20, Fe ₂ O ₃ + C
Cl ₄ gas discharge was performed, and an ion beam 18 with a current amount of 5 mA was generated by using an extraction power source 16 and extracting with an extraction voltage Vext = 20 kV. The ion beam was mass-separated using a mass-separation electromagnet 28 having a deflection radius of 50 cm and a deflection angle of 90 degrees, and Fe ions having a mass number of 56 were taken out.
The potential of the ion source 20 was variously changed by the acceleration power supply 17. The mass separation electromagnet 28 is a saddle type in which the vacuum pipe 23 is divided into three along the circumference of the pipe.

The mass-separated iron ions are passed through the ion deceleration lens 27 to decelerate the energy to the acceleration potential of the ion source, and the degree of vacuum is set to 2 × from the flange 29 attached to the lower portion of the film forming chamber 25 having a diameter of 400 mmφ. 10 ^-6 Pa
It was introduced into the film forming chamber 25 maintained at

In the film forming chamber 25, a Si (100) substrate 2 having a diameter of 2 inches is introduced into the substrate holding mechanism 29 with a heating function from the substrate load lock chamber 24, and the surface on which a thin film is to be formed faces downward. Then, it was held so that its surface was in a horizontal position as shown in the figure.

The halogen lamp heater 26 located on the back surface of the substrate attached to the substrate holding mechanism with the heating function 26 was energized to keep the silicon substrate temperature at 300 ° C.

Thus, the Fe ion mass-separated was irradiated for 60 minutes from the direction perpendicular to the silicon substrate 2 having a diameter of 2 inches arranged horizontally. As a result, (1
10) A pure iron thin film epitaxially grown in the crystal direction was obtained. At that time, the diameter of the film is 20 mm and the film thickness is 5
It was 00 nm.

In the present embodiment, the energy of iron ions is set to 50 to 500 eV, but it may be higher if the thin film is deposited by the ion beam deposition method. If the ion energy is low, the thin film will have a more dense and smooth surface.

Table 1 shows the conditions for forming the iron thin film and the corrosion rate calculated from the polarization characteristics obtained by immersing the iron thin film in saline and sweeping the potential of the iron film from the cathode to the anode. The corrosion current density indicating the corrosion rate under the film forming conditions obtained by the present invention is 1 compared with iron formed under other conditions.
It was found that the corrosion current, that is, the corrosion rate was reduced to / 10 or less. The crystal grain size of the film was 20 nm or less.

Particularly, the ion kinetic energy is 200 eV.
It was found that the following film forming conditions by the ion beam deposition method are suitable for imparting high corrosion resistance. A highly corrosion-resistant thin film can be obtained by depositing with an energy of 1 eV or more, particularly 10 eV or more, which is higher than the ion kinetic energy of vapor deposition.

The crystal orientation on the surface of the iron was examined by an X-ray diffractometer.
In (10), the (110) plane, which is a dense surface of α-iron, is selectively oriented, and the (110) plane is oriented substantially perpendicular to the surface, that is, similar to a (110) single crystal. It was found to have a polycrystalline structure.

Further, the distribution of elements other than iron on the surface of each iron was measured by a glow discharge mass spectrometer. As a result, in Nos. 4 to 10 in Table 1, other than No. 1 to 3 of the conventional method, It was found that the amount detected was 1/100 or less of the amount of elements, and that the effect of reducing this amount of impurities also contributed.

FIG. 3 shows polarization curves measured by immersing the iron thin film prepared according to the present invention and commercially available 99.5% iron in 0.001 M saline solution at 25 ° C. The corrosion current density of commercially available 99.5% iron is 2 × 10 ⁻² A / m ² , whereas the corrosion current density of the iron film prepared by the ion beam method of the present invention is When the voltage is 100V, which is No. 8, it is about 1/10 of that and the extraction voltage is No. 10.
It was found that in the case of 50 V, it was remarkably reduced to about 1/100 of that. These thin films of the present invention had a high purity of 99.999% or more of iron having a mass number of 56.

[0055]

[Table 1]

FIG. 4 also shows 0.001MH ₂ S at 25 ° C.
It is a polarization curve measured by immersing in an O ₄ aqueous solution. Fe
99.5% and 99.99% are both commercially available, RR
_RH 6000 and 8000 are Fe having a purity of 5 nines and the latter having a purity of 7 nines obtained by Floating Zone Melting, respectively. Although it is clear that the corrosion resistance is improved by the high purification, it is clear that the corrosion resistance is further improved by forming the high purification and the plane index in a specific direction as in Nos. 8 and 10 of the present invention. is there.

FIG. 5 is a diagram showing the relationship between the degree of vacuum reached during film formation and the impurity concentration, FIG. 6 is the amount of corrosion in saline solution, and FIG. 7 is the relationship between the impurity concentration and the amount of corrosion. As shown in FIG.
By increasing the degree of vacuum, impurities such as oxygen and other metal elements are drastically reduced, and especially at 10 ^-5 Pa, 1.5 × 10 ^{5.
-About 3} pieces. Further, as shown in FIG. 6, at 10 ⁻⁵ Pa, the amount of corrosion is 10 ² μg / cm ² , and the amount of impurities at that time is about 10 ¹⁵ pieces / cm ² as shown in FIG. 7. In particular,
When the amount of impurities is 3 × 10 ¹² pieces / cm ² or less, the amount of corrosion sharply decreases, and the degree of vacuum is preferably 10 ⁻⁷ Pa or more.

FIG. 8 shows the ion accelerating voltage of the IBD apparatus of Example 1, that is, the ion kinetic energy was changed from 30 eV to 500 eV, and the crystal orientation (1
0.00 when adjusting the ratio of (10) plane to (211) plane
The corrosion amount at 25 ° C. in 1 mol / liter saline solution is shown. As the ion acceleration voltage increases, (211)
Face ratio increases. The selected iron isotope is 56 of iron, but it has been confirmed that the ratio of crystal orientations other than the close-packed plane increases in other metals as the ion acceleration voltage increases.

FIG. 9 shows the relationship between the measured work-related values of various types of iron and the amount of corrosion in 25 ° C. saline water saturated with air. IB
The work relationship of the iron surface formed in D is the usual value of 4.5 eV
Although it is higher at 4.65 eV, it is considered that the threshold value of electron emission from this surface has a correlation with the strengthening of the surface oxide film showing the improvement in corrosion resistance.

(Example 2) Using the ion beam deposition apparatus shown in Example 1, thin films of various elements were formed.
The metal ions extracted from the ion source 20 by the accelerating voltage power supply 17 change their trajectories toward the substrate 2 by the magnet 28. The metal ions were collected by the lens 27 on the substrate having the same potential as the ground potential, and the metal could be deposited in a predetermined area to form a thin film. The metals used for film formation were iron, nickel, manganese, aluminum, copper, tungsten, tantalum, and niobium, and these oxides were used as the metal compound as a raw material of plasma for ionizing the metal. The film forming conditions are room temperature and kinetic energy is 50.
It was set to eV. Table 2 shows the results of comparing the amounts of corrosion of these metal films when immersed in saline solution having a concentration of 1 mol / l for 1 hour with the commercially available high purity corresponding metal being 1. The thin film of the present invention had high corrosion resistance for all the metals.

The mass number of the metal of the deposited thin film is Fe
56, Ni58, Mn55, Al27, Cu63, W18
4, Ta181 and Nb93. Note that other mass numbers can be similarly deposited. The crystal grain size of each film was about 3 nm or less.

[0062]

[Table 2]

(Example 3) Using the apparatus shown in FIG. 1, Fe and Mo ions from the vapor deposition source 3 of the ion source were formed using these oxides, and Fe atoms 56 and Mo atoms 36 ions were simultaneously irradiated. Then, a high corrosion resistant Fe-C-Mo low alloy steel thin film was formed at room temperature.

Film forming chamber 2 in which the degree of vacuum was kept at 2 × 10 ^-3 Pa
Iron substrate 31 with a diameter of 50 mm arranged horizontally in 5
Irradiation is performed with ion energy of 1000 eV that is vertically separated from the upper part for 30 minutes by the lower part of the film forming chamber 25, and
Fe and Mo from the vapor deposition source 3 are alternately deposited by switching the current of the electromagnet 28. By depositing these on the order of one atomic layer, 300
It was possible to alloy by preheating to about ℃. The crystal grain size was 5 nm or less.

As a result, a highly corrosion-resistant Fe-C-Mo low alloy steel thin film 22 having a film thickness of 2 μm could be formed on the iron substrate 2 at a substrate temperature of room temperature. The corrosion progress rate of the formed thin film 22 in saturated saline is 0.02 mm / year,
While the ordinary iron alloy thin film has a value of 2 mm / year, it shows a small value of two digits, and the corrosion resistance is improved. The adhesion to the substrate 2 was high.

(Embodiment 4) FIG. 10 is a schematic diagram showing the structure of a magnetic disk drive 4000 according to an embodiment of the present invention. As shown in FIG.
Is a plurality of magnetic disks 112 laminated on one axis (spindle) at equal intervals, and a motor 1 for driving the spindle.
11, a magnetic head group 13 held by a movable carriage 114, a voice coil motor 115 that drives the carriage 114, and a base that supports these. Further, a voice coil motor control circuit for controlling the voice coil motor 115 according to a signal sent from a higher-level device such as a magnetic disk control device is provided. In addition, it has a function of converting the data sent from the host device into a current corresponding to the writing method and a function of amplifying the data sent from the magnetic disk 113 and converting it into a digital signal. It has a read / write circuit that it has, and this read / write circuit
It is connected to the host device through the interface.

Next, the operation of the magnetic disk device 4000 will be described by taking the case of reading as an example. The host device gives an instruction of the data to be read to the voice coil motor control circuit 115 via the interface.
By the control current from the voice coil motor control circuit,
The voice coil motor 115 drives the carriage 114, and the magnetic head group 113 is moved at high speed to the position of the track where the instructed data is stored, and the magnetic head group 113 is accurately positioned. This positioning is performed by the positioning magnetic head 113a connected to the voice coil motor control circuit detecting and providing the position on the magnetic disk 112 and controlling the position of the data magnetic head 113. Further, the motor 111 instructed by the base rotates the plurality of magnetic disks 112 attached to the spindle. Next, according to the signal from the write / read circuit, the specified predetermined magnetic head is selected, the head position of the specified area is detected, and then the data signal on the magnetic disk is read. In this reading, the data magnetic head 113 connected to the write / read circuit causes the magnetic disk 11 to read.
It is performed by exchanging signals with the two. The read data is converted into a predetermined signal and sent to the host device.

The track density of the magnetic disk according to the present invention is 2600 to 20000 tracks per inch. The linear recording density is 65 to 200 kilobits per inch.
The areal recording density determined by the product of these can be set to 170 to 4000 megabits per square inch.

The magnetic head mounted on the magnetic disk device of the present invention is, for example, the recording / reproducing separation head 3000 shown in FIG. Recording / reproducing separated type magnetic head 300
At 0, recording is performed by the electromagnetic induction type thin film magnetic head 2000, and reproduction is performed by the magnetoresistive effect type magnetic head (hereinafter referred to as MR head) 1000.

According to the present invention, the reproducing output per unit track width of the MR head 1000 is the same as the conventional recording / reproducing electromagnetic induction type when the reproducing operation is performed with the same flying height and the same kind of magnetic disk medium. 5-1 of thin film magnetic head
It can be 0 times. Moreover, the reproduction output has an excellent advantage that it does not depend on the peripheral speed of the magnetic disk.

Further, this makes it possible to maintain a high reproduction output even when the track width of the MR head is small, that is, the track density of the magnetic disk medium is large. Further, even if the linear recording density of the magnetic disk medium is increased, a high reproduction output can be maintained.

Further, according to the present invention, Barkhausen noise, which is likely to occur in an electric signal from a magnetic disk during reproduction, is suppressed, and the noise is caused by the noise at any disk rotation speed, sense current and flying height. Since the amount of baseline fluctuation of the generated reproduced waveform is suppressed to 3% or less, a noiseless electric signal can be obtained, a high S / N ratio can be secured, and information can be reproduced with high sensitivity.

Further, according to the present invention, it is possible to obtain a stable, high-output, noiseless electrical signal within the operating temperature range.

Further, according to the present invention, by separating the recording head and the reproducing head, the magnetic core material 130 of the recording head 2000 can be a material having a high saturation magnetic flux density Bs, and the write magnetic field can be increased. Moreover, it is possible to make it sharp and to record at a high linear recording density. Further, even if the track width is small, a high write magnetic field can be maintained, and recording can be performed at a high track density. In addition, the coercive force of the magnetic disk medium can be increased accordingly.

From the above, the MR head 100 according to the present invention.
By configuring the magnetic disk device including 0, it is possible to realize a magnetic disk device capable of high-output and noiseless reproduction regardless of the size of the disk diameter.

From the above, high density recording is possible regardless of the size of the magnetic disk, and the magnetic disk apparatus of the present invention can rotate the magnetic disk even if the disk diameter is reduced to 1.5 inches to 6.5 inches. At 3500 to 5000 rpm, track density is 2.6 to 20.0 ktpi, and linear recording density is 60 to
It is possible to record and reproduce at 200 ktpi, and it is possible to realize a magnetic disk device that achieves an areal recording density of 170 to 4000 megabits per square inch.

Further, in order to satisfy the device capacity required for a small-sized magnetic disk device, a high bit density and a high track density are used, and even if the disk diameter is reduced to 1.5 to 3.0 inches, it can be read sufficiently. Also, since the write operation can be performed, the disk diameter can be reduced to that size, and a large-capacity small magnetic disk device can be realized.

Even if the recording density is increased and the information storage capacity is increased, the data transfer speed is reduced accordingly, so that the utility value is low. The higher the linear recording density, the higher the data transfer rate. In the present invention, the linear recording density can be set to 60 to 200 kilobits per inch, and the transfer rate can be increased.

Further, according to the present invention, the recording head 200
The high Bs material is used for the magnetic core material 130 of 0, and by this, the number of turns can be reduced because a sufficiently strong write magnetic field can be maintained even if the number of turns of the conductor coil 110 is reduced (FIG. 16). The inductance of the recording head 2000 can be reduced, and the information writing operation can be sufficiently performed even at high frequencies.

Further, the reproduction output of the MR head does not depend on the peripheral speed, and the information reading operation can be performed at high frequency.

Furthermore, the MR head 1000 according to the present invention.
The electric signal obtained by using is noiseless.
Therefore, the obtained electric signal can be converted into a digital signal without passing through a special circuit for processing the Barkhausen noise.

From the above, according to the present invention, the data transfer rate can be set to 6 to 9 megabytes / second.

Access time to data (positioning time)
Needs to be shortened as the data transfer rate increases, and is preferably 5 to 10 milliseconds in the present invention.

The disk rotation speed and the rotation waiting time of the magnetic head are 3500 rotation speeds in relation to the data transfer rate.
It is desirable that the rotation waiting time is not less than 6 rpm and not less than 6 ms on average. Here, the rotation waiting time means that the magnetic head that has moved to a predetermined track position writes the information at a predetermined position on the track or stands still for reading information from the predetermined position and the magnetic disk is rotated. Mean waiting for.

According to the present invention, since the diameter of the magnetic disk can be reduced, high speed seek can be performed, and further, the MR head 10
Since Barkhausen noise of 00 can be suppressed, access time can be shortened.

When Barkhausen noise (baseline fluctuation) occurs when the MR head reads a signal from the magnetic disk, the data signal from the magnetic disk must be read again. At this time, the read operation is performed again in the cycle described above. For example, when a magnetic disk device is configured with an MR head that generates Barkhausen noise with a probability of 1/2, the access time is delayed by 1/30 second. In the magnetic disk device of the present invention,
Since the Barkhausen noise of the MR head was suppressed,
The access time can be 5-10 milliseconds.

FIG. 13 is a perspective view showing a state where the magnetic disk device of the present invention is housed in a predetermined space.

Head / disk assembly (HDA)
A head disk assembly unit (HDU) 73 is formed by 71 and the electronic circuit section 72, and is housed inside a container 700. The container 700 has a bottom side length of 0.3 to 1.5 m and a height of 0.2 to 2 m depending on the device capacity.
I am trying. In FIG. 3, A and B are HDA and H
It is an air flow for supplying clean air to the circuit board in the DU.

FIG. 14 is a perspective view showing a state in which the recording / reproducing separated type magnetic head of the present invention is formed on a predetermined slider.
Reference numeral 81 is a slider, which is, for example, nonmagnetic ceramics. Reference numeral 3000 denotes a recording / reproducing separated type magnetic head, which has the details shown in FIG. Further, since the recording head and the reproducing head are separated, the recording / reproducing separated type magnetic head has four current terminals. Reference numeral 83 indicates a medium facing surface, which is a surface facing the magnetic disk.

FIG. 15 is a perspective view showing a recording / reproducing separated type magnetic head in which the slider shown in FIG. 14 is formed on a load arm.

Reference numeral 91 indicates a load arm that supports the slider 81. Reference numeral 93 is a gimbal spring, which functions to keep the distance from the magnetic disk constant. The distance between the magnetic disk and the recording / reproducing separated type magnetic head 3000 formed at the tip of the slider 81 in the activated state of the magnetic disk device is generally called the flying height and is one of the important factors of the performance of the magnetic disk device. is there. In the magnetic disk device of the present invention, the flying height can be set to 0.2 μm or less.

FIG. 16 shows a recording / reproducing separation head 3000 provided in the magnetic disk device of the present invention. A read-only MR head 1000 is formed on a non-magnetic ceramic substrate 101, and an electromagnetic induction recording head 2000 dedicated to recording is formed above the MR head 1000. In FIG. 16, the recording head 2
000 and the layers formed above the signal detection electrode 60 on the right half of the MR head 1000 are omitted.

Reference numeral 210 in FIG. 16 is a conductor coil,
Reference numeral 130 is an upper and lower magnetic core material. Further, an insulating film denoted by reference numeral 220 is formed between them for electrical insulation.

Recording / reproducing separated type magnetic head 3 according to the present invention.
In 000, since the read operation is not performed by the recording head 2000, the magnetic core material 130 does not need the high magnetic permeability and low magnetostriction characteristics required at the time of reading, but only the high Bs characteristic required at the time of writing. It This allows
As described above, the upper and lower magnetic core materials 130 can be made of a high Bs material. Furthermore, since the writing characteristics do not depend largely on the magnetostriction constant of the magnetic core material 130, the material selection and the material composition margin are widened, and the recording head 2000 can be easily manufactured. This can improve throughput and yield. Furthermore, the selection of materials and the margin of the material composition can be widened, and elements such as Cr for improving the corrosion resistance can be added, and the recording head 2000 having excellent corrosion resistance can be manufactured.

FIG. 11 shows a typical magnetoresistive effect type magnetic head according to the present invention, and shows an embodiment most suitable for solving the above problems. FIG. 11 is a perspective view thereof, and FIG. 12 is an enlarged cross-sectional view of the medium facing surface, that is, the surface facing the magnetic recording medium.

The magnetoresistive head 1000 of FIG.
Is a lower shield film 110 on a ceramic substrate 101 such as zirconia, a lower gap film 120 of alumina formed on the lower shield film 110, and a Fe—Mn alloy formed on the lower gap film 120. , NiO or other oxide antiferromagnetic film 45, and an isolation film 77 of alumina or the like disposed on at least the magnetic sensitive portion of the magnetoresistive effect film 40 on the oxide antiferromagnetic film 45, and this isolation film 77. A magnetoresistive effect film 40 formed on the magnetoresistive effect film 40, which covers a predetermined region of the oxide antiferromagnetic film 45 on which the isolation film 77 is not disposed, and N which is disposed on the magnetoresistive effect film 40.
b or the like shunt film 50 and Ni-Fe alloy or the like soft film 5
5, a signal detection electrode 60 such as Nb formed on the soft film 55, an upper gap film 70 formed so as to cover the films, and an upper portion formed on the upper gap film 70. It is formed by including a shield film 80. Among these constituent elements, the characteristic feature of the present invention relates to the respective constituent relationships of the magnetic domain control layer, the magnetoresistive effect film, and the electrode film which play a role of preventing noise called Barkhausen noise.

Next, the function and material of each film and layer will be described.

The upper shield film and the lower shield films 80 and 110 prevent magnetic fields other than signals from affecting the magnetoresistive film 40, and increase the signal resolution of the magnetoresistive head 1000. The material is preferably a soft magnetic alloy such as a NiFe alloy, a NiCo alloy, or a Co-based amorphous alloy, and its film thickness is preferably about 0.5 to 3 μm.

The upper gap film 70 and the lower gap film 120 arranged adjacent to the magnetic shield film 80 or 110 electrically and magnetically isolate the magnetoresistive element from the upper shield film 80 and the lower shield film 110. It is preferable that the non-magnetic material such as glass and alumina such as silicon oxide, which has the function of acting as an insulator, is made of an insulator or the like. Since the film thickness of the upper gap film 70 or the lower gap film 120 affects the reproducing resolution of the magnetoresistive head 1000, it depends on the recording density desired for the magnetic disk device, and is in the range of 0.4 to 0.1 μm. Preferably there is. The distance between the pair of signal detection electrodes 60 is 0.5 to
It is preferably in the range of 10 .mu.m. The magnetic head mounted on the magnetic disk device of the present invention can have a particularly narrow reproduction track width, and particularly a reproduction track width of about 0.5 to 2 .mu.m. Further, the distance between the signal detection electrodes 60 of the magnetoresistive film 40 is referred to as a magnetic sensitive section,
A signal is read from the magnetic disk at this portion.
In order to make a magnetic signal from the magnetic disk a linear electric signal, a shunt film 50 and a soft film 55 are placed to apply a lateral bias magnetic field to the magnetoresistive effect film 40. The magnetoresistive film 40 is made of Ni-10 to 20 weight Fe alloy, Ni.
A ferromagnetic film, such as a Co alloy, a NiFeCo alloy, or an alloy containing these alloys containing 3 wt% or less of Ru, whose electric resistance changes depending on the direction of magnetization, and is formed by the ion deposition of the present invention. The film thickness is 0.00
1 μm to 0.045 μm deposition surface has a (100) surface,
Those having fine grain crystal grains having a grain size of 5 nm or less are preferable. It is preferable that the portion where the separation film is removed and the magnetic domain control film 45 and the magnetoresistive effect film 40 are in direct contact be present at least 3 μm or more in the length direction of the magnetoresistive effect film. It was found that the film does not occur and it functions as a magnetic domain control film.

The signal detecting electrode 60 is the magnetoresistive film 40.
Sufficient current, for example 1 × 10 ⁶ to 2 × 10 ⁷ A / cm ²
To flow Cu, Au, Nb, Ta with low electrical resistance
It is preferable to use a thin film such as

The shunt film 50 acts to apply the lateral bias magnetic field to a level sufficient to make the magnetoresistive effect film 40 highly sensitive. The bias application direction is perpendicular to the direction applied by the magnetic domain control layer described above. A method using a shunt film to apply a lateral bias magnetic field is called a shunt bias method. In the shunt bias method, a T film is formed on the magnetoresistive effect film 40 as a shunt film.
A thin metal film of i, Nb, Ta, Mo, W or the like is formed. The film thickness is preferably 0.01 to 0.04 μm. Further, since the lateral bias magnetic field changes due to the current flowing through the shunt film, it is necessary to adjust the specific resistance as well as the film thickness of the shunt film 50. The value of the specific resistance is preferably about 1 to 4 times the value of the specific resistance of the magnetoresistive effect film 40.

In addition to the shunt bias method, as a method of applying a lateral bias magnetic field to a level sufficient to make the magnetoresistive effect film 40 suitable for a magnetoresistive effect head for high density magnetic recording highly sensitive, for example, , There is a soft film bias method.

In the soft film bias method, a ferromagnetic film having a soft magnetic property is formed adjacent to the magnetoresistive film via a nonmagnetic layer, and the magnetic field generated by the current flowing through the magnetoresistive film is efficiently generated. Often, it is a method of applying to the magnetoresistive film. As the soft film 55, NiFeRu, Ni
Materials such as FeTa, NiFeRh, CoZrCr, and MnZn ferrite are used.

Although these methods may be used alone, the composite bias method in which the soft film 55 is formed on the shunt film 50 (non-magnetic film) as shown in FIG. 11 is effective, and it is related to the present invention. In the magnetoresistive head 1000, the composite bias method is adopted.

Next, a method of manufacturing the magnetoresistive head 1000 will be described. The thin film forming method and patterning method described below used a sputtering method, etching, and photolithography method.

First, Ni used as the lower shield film 110.
The Fe alloy is formed to a thickness of 2 μm, and thereafter, the alumina serving as the lower gap film 120 is formed to a thickness of 0.3 μm on the upper portion thereof. Then, the lower shield film 110 and the lower gap film 120 are processed into a predetermined shape. Here, the end portion of the lower shield film 110 is processed so as to be inclined with respect to the substrate surface, as shown in FIG. this is,
This is to prevent the signal detection electrode 60 formed so as to cover the lower magnetic shield film 110 from breaking at the end of the lower shield film 10. Next, an oxide antiferromagnetic film 45 of 0.04 to 0.2 μm is formed on the upper side of the lower gap film 120. The separation membrane 77 is put in place at about 0.01-0.02.
μm is formed. Here, the separation film 77 is formed by a lift-off method or the like so as to be arranged at least at the position of the magnetic sensitive portion of the magnetoresistive effect film 40. When forming the separation film 77, it is preferable to taper both ends of the separation film 77 in order to prevent step breakage of the magnetoresistive effect film 40. Furthermore, the separation film 77 may be formed by an ion milling method or the like. Next, a NiFe alloy film having a thickness of 400 Å is formed above the separation film 77 as the magnetoresistive effect film 40, and subsequently, an Nb film having a thickness of 400 Å is formed as the shunt film 40 to form a soft film 55. A CoZrNb film is formed to a thickness of 400Å. After that, the soft film 55, the shunt film 50, the magnetoresistive film 40, and the separation film 77 are collectively processed into the shape shown in FIG. 1 by a method such as an ion milling method. Then, the two-layer film of gold and titanium for the signal detection electrode 60 is set to 0.1.
After being formed to a thickness of 1 μm, it is processed, and further, alumina to be the upper gap film 70 is formed to a thickness of 0.3 μm on the upper portion thereof. Next, the upper magnetic shield film 80 is formed.
A NiFe alloy film is formed to a thickness of 2 μm, alumina is formed as a protective film, and the production of the magnetoresistive head 1000 is completed.

When the head having the structure of the present invention is used, high sensitivity can be obtained without reducing the size of magnetic exchange coupling, and cleaning of the magnetoresistive effect film, which causes characteristic variations and noise, is not required. In addition, it is possible to provide a magnetoresistive effect type magnetic head having a layer structure that functions as a magnetic domain control layer at the end of the magnetoresistive film. Further, it is possible to provide a method for manufacturing a magnetoresistive effect magnetic head capable of suppressing the variation in performance among a plurality of magnetoresistive effect magnetic heads caused by the variation in the characteristics of the magnetic domain control layer. That is, in the magnetoresistive effect type magnetic head according to the present invention, the isolation film 77 is formed in a desired shape to form a portion in which the magnetization of the magnetoresistive effect film freely moves while leaving the action of the magnetic domain control layer. If the electrodes are formed in such a region where the magnetization freely moves, the distance between the electrodes becomes the reproduction track width as it is,
Barkhausen noise can be prevented and a narrow track can be achieved only by narrowing the gap between the electrodes.
Furthermore, since the sensitivity between the electrodes is substantially uniform, the reproduction sensitivity is also significantly improved.

Next, materials forming the magnetic domain control layer 45 and the isolation film 77 will be described.

The magnetic domain control layer 45 is preferably an oxide film in order to increase the ratio of the detected current shunt to the magnetoresistive film. An oxide film having a magnetic domain control effect is preferably a ferromagnetic film or an antiferromagnetic film, but antiferromagnetic nickel oxide (N
iO) is desirable. As a material for the oxide antiferromagnetic film 45, in addition to the above NiO, hematite (α-Fe ₂ O ₃ can be assumed to be a substitute).
o, Ni magnetic elements and rare earth magnetic elements La, Ce, P
r, Nd, Pm, Sm, Gd, Tb, Dy, Ho, E
It can be estimated that substitution is possible even if r, Tm, and Yb are added.

As the material of the separation film 77, the following materials are preferable. That is, A1, Ti, Cu, Nb, Mo, T
a, W, Ti, V, Cr, Rh, Ru, Zr, Pd, A
g, Pt, In, Sn, Re, Os, Ir, Au, alumina (Al ₂ O ₃ ), silicon oxide (SiO ₂ ), titania (TiO ₂ ), hafnia (HfO ₂ ), zirconia (Z
rO ₂ ) and carbon (C) are preferable. Furthermore, a binary or more non-magnetic alloy film in which the above metal elements are combined may be used. Further, it may be made of a material obtained by adding a third element to the above oxide or carbon. In addition, Al ₂ O ₃ , S
Since iO ₂ , TiO ₂ , HfO ₂ , ZrO _{2 and the} like exhibit insulating properties, by using these as the separation film 77, the current density at which the magnetoresistive effect film 40 can be energized can be increased and the magnetoresistive effect type magnetic head can be obtained. It is advantageous for high sensitivity.

The thickness of the separation film 77 according to the present invention is 10 to 10.
It is in the range of 300Å. As shown in FIG. 1, the magnetoresistive effect film 40 is formed above the separation film 77. Since the magnetoresistive effect film 40 is formed by riding on the separation film 77, when the separation film 77 has a large film thickness, the magnetoresistive effect film 40 is discontinuous. For this reason, it is desirable that the thickness of the separation membrane is thin, and preferably 200 Å or less. On the other hand, with a film forming technique such as a sputtering method, the critical film thickness at which the separation film can be a continuous film is 50 Å or more. Therefore, it is desirable that the thickness of the separation film 77 be in the range of 50 to 200Å. Further, in order to effectively transmit the bias magnetic field from the end portion, it is desirable that the film thickness of the magnetoresistive effect film 40 be larger than that of the separation film.

The magnetic domain control layer according to the present invention is provided with a shield film to form an MR head. The non-shield type magnetoresistive effect type magnetic head, the yoke type magnetoresistive effect type magnetic head, the magnetic resistance for magnetic tape are used. Effect type magnetic head,
Furthermore, the present invention can be applied to a magnetic sensor that simply uses the magnetoresistive effect of a ferromagnetic film.

In the present embodiment, the shield films 110 and 80 constituting the magnetoresistive thin film magnetic head medium facing surface contain an iron-nickel alloy, the antiferromagnetic film 45 contains an iron-manganese alloy, and the magnetoresistive film 40 contains 1 wt% of Ru. Iron-nickel permalloy alloy, a film obtained by oxidizing the separation film 77 by irradiating Al,
The shunt film 50 is Nb, the soft film 55 is an Ni—Fe alloy alloy containing 1 wt% Ru, and the electrode 60 is Nb. The shape of each film defines the pattern by the photoresist. The film thickness is converted from the ion beam current. A metal thin film is formed in a desired range of 10 to 3000 nm. The IBD method takes a metal element as a positively charged ion, accelerates it with an electric field by a negative electrode for extracting the ion, and then takes it out into a vacuum container to remove an isotope element of the same mass number by a mass separation magnet. After selecting the ions, set the kinetic energy of each ion to 2
Metals with the same mass number are deposited by decelerating below 00 eV.

The film formation by the IBD method in this example was carried out using the apparatus shown in Example 1, and an oxide was used as each element as an ion source. The degree of vacuum was 10 ⁻⁵ Pa, the acceleration voltage of the ion source was 50 V, and the substrate was 300 ° C. The mass number of each element is the same as that shown in Example 2. The alloy thin film was alloyed by being deposited layer by layer within a few atoms by switching according to the deposited material of each element at a predetermined current value of the electromagnet 28. Preferably, it is deposited every one atomic layer (within 10 seconds as the deposition time). In addition, each film has a particle size of 5 nm or less, especially about 1 n.
An ultrafine particle granular thin film of m is formed, and a densest surface having a surface orientation of the deposition surface of (110) for a body-centered cubic lattice and (100) for a face-centered cubic lattice is formed, and a highly corrosion-resistant film. Was formed.

Further, in particular, the magnetoresistive effect film 40 in the present embodiment has a magnetically equivalent characteristic while the film formed by the conventional sputtering method has a thickness of about 1 μm. Since it is possible to form an extremely thin film of 0.02 μm, it has been found that high-performance reading can be performed.

Similarly, instead of Nb, a W magnetic head electrode was obtained by the IBD method. After the oxide WO ₃ is ionized as plasma by mixing with carbon tetrachloride vapor, it is formed after the soft film 55 in order to selectively stack W184 at the position of the electrode 60 shown in FIG. Conventionally, the W electrode that corroded during the polishing and cleaning process on the device surface was made highly corrosion resistant by this method, and the specific resistance after these polishing and cleaning processes was 15 μΩcm or less, hardly increasing, and a highly reliable product was obtained. It was

As another embodiment, the shield films 110 and 8
0, the magnetoresistive film 40, and the soft film 55 were formed from a permalloy alloy by a sputtering method, and then each surface had a purity of 5 nines of iron 58 under the conditions of No. 7 of Example 1 and a thickness of 5 nm of the (110) plane. Was formed. As a result, a magnetic head having high corrosion resistance and high sensitivity was obtained.

[0118]

According to the present invention, a high purity metal thin film can be obtained and an excellent high corrosion resistant film can be obtained. as a result,
Since a magnetic head having high sensitivity and high corrosion resistance is manufactured in the magnetic disk device, it is highly reliable.

[Brief description of drawings]

FIG. 1 is a configuration diagram of an ion beam deposition apparatus of the present invention.

FIG. 2 is a configuration diagram of an ion source.

FIG. 3 is a diagram showing the relationship between the current density in NaCl and the potential.

FIG. 4 is a diagram showing the relationship between the current density in H ₂ SO ₄ and the potential.

FIG. 5 is a diagram showing the relationship between the impurity concentration and the degree of vacuum reached during film formation.

FIG. 6 is a graph showing the relationship between the amount of corrosion and the degree of vacuum reached during film formation.

FIG. 7 is a diagram showing the relationship between the amount of corrosion and the amount of iron surface impurities.

FIG. 8 is a diagram showing the relationship between the amount of corrosion and the surface ratio.

FIG. 9 is a diagram showing the relationship between the amount of corrosion and the work function of iron.

FIG. 10 is a configuration diagram of a magnetic disk device according to the present embodiment.

FIG. 11 is a cross-sectional view of a magnetoresistive effect magnetic head.

FIG. 12 is an enlarged view of a main part of FIG.

FIG. 13 is a perspective view showing the overall configuration of a magnetic disk device.

FIG. 14 is a perspective view of a slider on which a magnetic head is formed.

FIG. 15 is a perspective view in which a slider is provided on a load arm.

FIG. 16 is a partial cross-sectional perspective view of a recording / reproducing separation head.

[Explanation of symbols]

1 ... Ion beam, 3 ... Ionization raw material, 4 ... Discharge chamber,
5 ... Slit, 6 ... Magnetic field coil, 7 ... Gas introduction hole, 9 ...
Plasma, 10 ... Vacuum pump, 11 ... First electrode, 12 ...
Power supply, 13 ... Second electrode, 15 ... Ion acceleration power supply, 20 ...
Microwave ion source, 21 ... Waveguide, 22 ... Magnetron, 23 ... Ion beam transport vacuum piping, 24 ... Substrate load lock chamber, 25 ... Ion implantation chamber, 26 ... Heater,
27 ... Lens system, 28 ... Electromagnet for separating 90 ° deflection mass, 29 ... Substrate supporting means, 30 ... Insulator, 31 ... Reflective high energy electron diffraction, 32 ... Electro gun,
40 ... Magnetoresistive film, 45 ... Oxide antiferromagnetic film, 50
... shunt film, 55 ... soft film, 70 ... upper gap film, 77 ... separation film, 80 ... upper shield film, 81 ... slider, 101 ... ceramics substrate, 110 ... lower shield film, 112 ... magnetic disk, 120 ... magnetic gap ,
130 ... Magnetic core material, 210 ... Conductor coil, 1000 ...
MR head, 2000 ... Recording head, 3000 ... Recording / reproducing separation head, 4000 ... Magnetic disk device.

─────────────────────────────────────────────────── ─── Continuation of front page (51) Int.Cl. ⁵ Identification number Reference number within the agency FI Technical indication location H01F 41/20 (72) Inventor Moriaki Fuyama 4026 Kujicho, Hitachi City, Ibaraki Hitate Manufacturing Co., Ltd. Hitachi Research Laboratory

Claims (16)

[Claims] 1. A metal having a single mass number and a purity of 99.
A highly corrosion-resistant metal characterized by being 99% or more. 2. The purity is 99.99% or more, and the crystal grain size is 5.
A highly corrosion resistant metal having a thickness of 0 nm or less. 3. A member having a thin metal film on the surface of a substrate, wherein the thin film is made of a metal having a single mass number or an alloy made of a combination of a plurality of metals having a single mass number. 4. A member having a metal thin film on the surface of a substrate, wherein the thin film is deposited on the densest surface in the deposition direction and has a crystal grain size of 0.5 μm or less. 5. A high-performance device comprising ionizing a metal, separating the ionized metal into a single mass number, and accelerating and depositing the separated single mass number of metal so as to prevent sputtering. Manufacturing method of corrosion resistant metal. 6. High corrosion resistance characterized by ionizing a metal, separating the ionized metal into a single mass number, and accelerating the mass-separated single mass number of metal to 1 to 200 eV to deposit. Manufacturing method of metal. 7. Ionizing a plurality of metals, separating each of the ionized metals into a single mass number, and accelerating and depositing the separated single mass number of metals in a substantially sputter-free manner. At the same time, a method for producing a highly corrosion-resistant metal, characterized in that a plurality of individual metals each having a single mass number are alternately deposited for each same metal. 8. A method of manufacturing a member for forming a metal thin film on a surface of a substrate, wherein ionized metal is separated into a single mass number, and the separated single mass number of metal is accelerated so that sputtering is not substantially generated. A method for producing a highly corrosion resistant member, characterized by comprising: 9. A method of manufacturing a member for forming a metal thin film on a surface of a substrate, which comprises accelerating and depositing ionized metal so that sputtering is not substantially generated. 10. A metal ion implantation chamber for depositing a metal on a substrate, a discharge chamber for forming the metal ions, an ion acceleration power source for accelerating the metal ions, and the accelerated metal ions are introduced into the metal ion implantation chamber. Ion beam transport pipe, extraction power source for accelerating and introducing the metal ions into the pipe at high speed, mass separation electromagnet for mass-separating the metal ions introduced at high speed, and decelerating the mass-separated metal ions An apparatus for producing metal, comprising a drawing voltage control lens. 11. The metal manufacturing apparatus according to claim 11, wherein the electromagnet has a switching means for switching a current. 12. The metal manufacturing apparatus according to claim 11, wherein the metal ion implantation chamber has a substrate holding means for holding the substrate and a heater for heating the substrate. 13. A magnetic shield film on a ceramic substrate,
A lower gap film, a magnetic domain control film, a magnetoresistive film for converting a magnetic signal into an electrical signal by using a magnetoresistive effect, a shunt film, a soft film, and a pair of electrodes for supplying a signal detection current to the magnetoresistive film. A magnetic disk device having a magnetoresistive effect magnetic head sequentially provided, wherein at least one of the films has a metal having a single mass number, and an alloy made of a plurality of elements and having a single mass number. Or a magnetic disk device comprising a compound. 14. A magnetoresistive effect film for converting a magnetic signal into an electrical signal by using a magnetoresistive effect, a pair of electrodes for flowing a signal detection current through the magnetoresistive effect film, and the magnetoresistive effect film. A magnetic domain control layer for controlling magnetic domains of a magnetic disk device having a magnetoresistive effect magnetic head, wherein the magnetoresistive effect film is made of a metal having a single mass number or a plurality of metals. A magnetic disk device comprising an alloy having a single mass number. 15. A magnetoresistive film that senses external magnetization and changes the magnetization direction, a pair of electrodes for flowing a current through the magnetoresistive film, and a magnetic domain control layer that controls the magnetic domain of the magnetoresistive film. And a magneto-resistive effect magnetic head, wherein the magneto-resistive effect film is made of fine crystal grains of granular crystals, and the deposition surface is made of a metal or alloy having a desired one surface index. A magnetic disk device characterized by the following. 16. A magnetoresistive effect film for converting a magnetic signal into an electric signal by using a magnetoresistive effect, a pair of electrodes for flowing a signal detection current through the magnetoresistive effect film, and the magnetoresistive effect film. A reproducing head portion having a magnetic domain control layer for controlling the magnetic domains, a first magnetic pole, a second magnetic pole which is in contact with the first magnetic pole on one side and forms a gap on the other side, and a coil which winds between the magnetic poles. A magnetic disk device equipped with a basic recording / reproducing separated thin film magnetic head having a recording head portion for converting a current flowing through a coil into magnetization, the magnetic resistance effect film having a thickness of 5 to 100 nm. A magnetic disk drive characterized by comprising a fine granular crystal metal or alloy.