JPH06183762A - Method for cutting brittle substrate - Google Patents
Method for cutting brittle substrateInfo
- Publication number
- JPH06183762A JPH06183762A JP33934592A JP33934592A JPH06183762A JP H06183762 A JPH06183762 A JP H06183762A JP 33934592 A JP33934592 A JP 33934592A JP 33934592 A JP33934592 A JP 33934592A JP H06183762 A JPH06183762 A JP H06183762A
- Authority
- JP
- Japan
- Prior art keywords
- crack
- brittle substrate
- substrate
- cutting
- liquid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B33/00—Severing cooled glass
- C03B33/02—Cutting or splitting sheet glass or ribbons; Apparatus or machines therefor
- C03B33/04—Cutting or splitting in curves, especially for making spectacle lenses
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B33/00—Severing cooled glass
- C03B33/02—Cutting or splitting sheet glass or ribbons; Apparatus or machines therefor
- C03B33/023—Cutting or splitting sheet glass or ribbons; Apparatus or machines therefor the sheet or ribbon being in a horizontal position
- C03B33/033—Apparatus for opening score lines in glass sheets
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0011—Working of insulating substrates or insulating layers
- H05K3/0044—Mechanical working of the substrate, e.g. drilling or punching
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
- Re-Forming, After-Treatment, Cutting And Transporting Of Glass Products (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明はガラス基板、セラミック
基板等の脆性基板の割断方法に関し、特に、脆性基板表
面に割断予定ラインに沿って形成したクラックを成長さ
せることにより、脆性基板を割断する脆性基板割断方法
に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for cleaving a brittle substrate such as a glass substrate or a ceramic substrate, and in particular, a brittle substrate is cleaved by growing cracks formed along a planned cleavage line on the surface of the brittle substrate. The present invention relates to a brittle substrate cutting method.
【０００２】[0002]
【従来の技術】この種の脆性基板割断方法として、従
来、特開平４−１１２５５２号（電子回路基板の製造方
法）、特開昭５７−１７５７４１号（ガラスの切断方
法）、特公昭５５−２９９４２号（ガラス板の高速切断
法）等が知られている。これらの従来の技術では、脆性
基板に割断用のクラックを形成する方法（すなわち、分
断用切り溝の付け方）が示されているが、実際の分断方
法については特に示されていなかった。前記従来の方法
は割断予定ラインが直線状の場合には、直線状割断予定
ラインに沿った割断が可能である。2. Description of the Related Art As a brittle substrate cleaving method of this kind, conventionally, JP-A-4-112552 (a method for manufacturing an electronic circuit board), JP-A-57-175741 (a method for cutting a glass), and JP-B-55-29942. No. (glass plate high-speed cutting method) and the like are known. In these conventional techniques, a method of forming a crack for fracture on a brittle substrate (that is, a method of forming a kerf for division) is shown, but an actual method of division is not particularly shown. In the conventional method, when the planned cutting line is straight, the cutting can be performed along the straight cutting line.
【０００３】[0003]
【発明が解決しようとする課題】しかし前記従来の方法
では、脆性基板の異形状分断（曲線状割断ラインに沿っ
た割断）は分断力の不均一により希望形状に高精度で割
断できないという欠点があった。これは従来の割断工程
では、脆性基板に曲げモーメントを加えることにより、
クラック（切り溝）の両側に前記クラックを広げるよう
な引張力を作用させて脆性基板を割断している。このよ
うな割断工程では、直線状のクラックの両側に前記クラ
ックを広げるように大きな引張力を作用させることは比
較的容易であるが、曲線状のクラックの両側に大きな引
張力を作用させることは容易でない。すなわち、曲線状
のクラックの両側にクラックを広げる方向の大きな引張
力を作用させる場合、それとは異なる方向にも大きな引
張力が作用することになる。この場合、クラックの深さ
が不十分であると、クラックが深さ方向に成長するより
も他の方向に大きく成長する場合が生じる。この場合、
望む方向と別の方向にクラックが成長し、所望の形状に
割断が行われなくなる。However, in the above-mentioned conventional method, there is a drawback in that the irregular-shaped cutting of the brittle substrate (cutting along the curved cutting line) cannot be cut into a desired shape with high accuracy due to uneven cutting force. there were. In the conventional cleaving process, by applying a bending moment to the brittle substrate,
A brittle substrate is cleaved by applying a tensile force that spreads the crack on both sides of the crack (kerf). In such a cleaving step, it is relatively easy to apply a large tensile force so as to spread the crack on both sides of the linear crack, but it is possible to apply a large tensile force on both sides of the curved crack. Not easy. That is, when a large tensile force is applied to both sides of a curved crack in a direction to spread the crack, a large tensile force also acts in a different direction. In this case, if the crack depth is insufficient, the crack may grow larger in the other direction than in the depth direction. in this case,
Cracks grow in a direction different from the desired direction, and the desired shape is not cleaved.
【０００４】本発明は、前述の事情に鑑み、下記（Ｏ0
1）の記載内容を課題とする。 （Ｏ01） 脆性基板表面に形成されたクラックが曲線状
であっても、クラックを常に深さ方向に成長させるこ
と。In view of the above circumstances, the present invention provides the following (O0
The content of 1) is the subject. (O01) Even if the crack formed on the surface of the brittle substrate is curved, the crack should always grow in the depth direction.
【０００５】[0005]
【課題を解決するための手段】次に、前記課題を解決す
るために案出した本発明を説明するが、本発明の要素に
は、後述の実施例の要素との対応を容易にするため、実
施例の要素の符号をカッコで囲んだものを付記してい
る。なお、本発明を後述の実施例の符号と対応させて説
明する理由は、本発明の理解を容易にするためであり、
本発明の範囲を実施例に限定するためではない。The present invention devised to solve the above problems will now be described. The elements of the present invention are to facilitate correspondence with the elements of the embodiments described later. , The reference numerals of the elements in the embodiments are enclosed in parentheses. The reason why the present invention is described in association with the reference numerals of the embodiments described later is to facilitate the understanding of the present invention.
It is not intended to limit the scope of the invention to the examples.
【０００６】前記課題を解決するために、本出願の第１
発明の脆性基板割断方法は、脆性基板表面に割断予定ラ
インに沿ってクラック（Ｃ）を形成し、このクラック
（Ｃ）を成長させて前記脆性基板（１）を割断する脆性
基板割断方法において、下記の要件（Ｙ01），（Ｙ02）
を備えたことを特徴とする、（Ｙ01） 温度変化により
液体から固体に変化するとともに固体になったときの体
積膨張率が前記脆性基板（１）の体積膨張率よりも大き
な割断用液体を前記クラック（Ｃ）に浸透させる液体浸
透工程、（Ｙ02） 前記クラック（Ｃ）に浸透した割断
用液体を固体に変化させて体積膨張させることにより前
記クラック（Ｃ）を成長させるクラック成長工程。本発
明において、前記分断用液体としては水を使用すること
ができる。In order to solve the above-mentioned problems, the first of the present application
The brittle substrate cleaving method of the invention is a brittle substrate cleaving method for forming a crack (C) on a surface of a brittle substrate along a planned cleavage line and growing the crack (C) to cleave the brittle substrate (1), The following requirements (Y01), (Y02)
(Y01) A liquid for cleaving which changes from a liquid to a solid due to a temperature change and has a volume expansion coefficient when becoming a solid is larger than that of the brittle substrate (1). Liquid infiltration step of infiltrating into the crack (C), (Y02) Crack growth step of growing the crack (C) by converting the cleaving liquid permeating into the crack (C) into a solid and expanding the volume. In the present invention, water can be used as the dividing liquid.
【０００７】[0007]
【作用】次に、前述の特徴を備えた本発明の作用を説明
する。前述の特徴を備えた本発明の脆性基板割断方法
は、脆性基板（１）表面に割断予定ラインに沿ってクラ
ック（Ｃ）を形成する。次に液体浸透工程において、前
記クラック（Ｃ）に割断用液体を浸透させる。次にクラ
ック成長工程において、前記クラック（Ｃ）に割断用液
体が浸透した脆性基板（１）の温度を変化させて、前記
割断用液体を固体に変化させる。前記温度変化により脆
性基板（１）及び固体となった前記割断用液体の体積は
変化する。その際、前記割断用液体は固体になったとき
の体積膨張率が前記脆性基板（１）の体積膨張率よりも
大きい。このため、前記クラック（Ｃ）に浸透した割断
用液体は、固体となっとときに前記クラック（Ｃ）を広
げるような力を脆性基板（１）に作用させる。Next, the operation of the present invention having the above features will be described. According to the brittle substrate cutting method of the present invention having the above-mentioned characteristics, cracks (C) are formed on the surface of the brittle substrate (1) along the planned cutting line. Next, in the liquid infiltration step, the cleaving liquid is infiltrated into the crack (C). Next, in the crack growth step, the temperature of the brittle substrate (1) in which the cleaving liquid has penetrated into the crack (C) is changed to change the cleaving liquid into a solid. The brittle substrate (1) and the volume of the cleaving liquid that has become a solid change due to the temperature change. At that time, the volume expansion coefficient of the cleaving liquid when it becomes a solid is larger than the volume expansion coefficient of the brittle substrate (1). Therefore, the cleaving liquid that has penetrated into the crack (C) acts on the brittle substrate (1) with a force that spreads the crack (C) when it becomes a solid.
【０００８】このとき、脆性基板（１）のクラック
（Ｃ）は深さ方向に成長する。脆性基板（１）の強度が
小さい場合は前記クラック（Ｃ）内に浸透した割断用液
体を固体に変化させる工程を一回行えば、脆性基板
（１）が割断されることがある。脆性基板（１）の強度
が大きく前記割断用液体を固体に変化させる工程を一回
行っただけでは割断できない場合はその工程を複数回く
り返すか、または、クラック（Ｃ）の深さが十分となっ
たときに、従来公知の突起付プレスによる割断を行う。
このように、前記クラック（Ｃ）の深さが十分であれ
ば、前記曲線状のクラック（Ｃ）に沿って高分留まりで
割断することが可能となる。すなわち、クラック（Ｃ）
の深さが不十分な状態で従来の突起付プレスにより脆性
基板（１）を割断する場合の、前記脆性基板（１）に作
用する力の不均一からおこる欠けや砕けを避けることが
できる。At this time, the crack (C) of the brittle substrate (1) grows in the depth direction. When the strength of the brittle substrate (1) is low, the brittle substrate (1) may be cleaved by performing the step of changing the cleaving liquid that has penetrated into the cracks (C) into a solid once. If the brittle substrate (1) has a large strength and the process of changing the cleaving liquid into a solid cannot be performed by performing the process only once, repeat the process a plurality of times or the depth of the crack (C) is sufficient. When, the cutting is performed by a conventionally known press with a projection.
In this way, if the depth of the crack (C) is sufficient, it is possible to fracture along the curved crack (C) with a high yield. That is, crack (C)
When the brittle substrate (1) is cleaved by a conventional press with protrusions in a state where the depth is insufficient, it is possible to avoid chipping or breakage due to uneven force acting on the brittle substrate (1).
【０００９】[0009]
【実施例】次に図面を参照しながら、本発明の脆性基板
割断方法の一実施例を説明するが、本発明は以下の実施
例に限定されるものではない。図１は本発明の実施例で
使用するスクライバーＳの説明図、図２は同実施例の脆
性基板の割断予定ラインの説明図、図３は同実施例のス
クライブ工程で形成されたクラック（切り溝）を示す
図、図４は同実施例のクラック成長工程の説明図、であ
る。EXAMPLE An example of the brittle substrate cutting method of the present invention will be described below with reference to the drawings, but the present invention is not limited to the following example. FIG. 1 is an explanatory view of a scriber S used in an embodiment of the present invention, FIG. 2 is an explanatory view of a planned cutting line of a brittle substrate of the same embodiment, and FIG. 3 is a crack (cutting) formed in a scribing process of the same embodiment. FIG. 4 is a diagram showing a groove), and FIG. 4 is an explanatory diagram of a crack growth process of the same example.
【００１０】図１，２において、脆性基板としてのガラ
ス基板１は、受光素子及びＴＦＴ等の画像読取用の回路
素子（図示せず）が形成されたガラス基板である。図２
において、前記ガラス基板１は、幅８.２ｍｍ、長さ２
７８ｍｍであり、割断予定ラインＬの形状は、直線部分
及び４.１Ｒの曲線部分を含んでいる。前記ガラス基板
１を前記割断予定ラインＬに沿って分断（割断）した場
合、４.１ｍｍ幅のＬ字形状の読み取り用電子部品が２
本取れる。この電子部品はＢ４サイズの読み取りが可能
である。In FIGS. 1 and 2, a glass substrate 1 as a brittle substrate is a glass substrate on which a light receiving element and a circuit element (not shown) for image reading such as a TFT are formed. Figure 2
In, the glass substrate 1 has a width of 8.2 mm and a length of 2
It is 78 mm, and the shape of the planned cutting line L includes a straight line portion and a curved portion of 4.1R. When the glass substrate 1 is cut (cut) along the planned cutting line L, there are 2 L-shaped reading electronic components having a width of 4.1 mm.
I can get this book. This electronic component can read B4 size.
【００１１】図１において、脆性基板１の割断予定ライ
ンＬ（点線参照）に沿って前記ガラス基板１にクラック
Ｃ（実線参照）を形成するスクライバーＳは、Ｘ−Ｙ平
面で移動可能なスクライバー本体６と、このスクライバ
ー本体６に内蔵されたエアシリンダ（図示せず）により
Ｚ方向（上下方向）に位置調節可能に支持されたチップ
ホルダ７と、このチップホルダ７に回転自在に支持され
た超硬ホイール８とを備えている。In FIG. 1, a scriber S that forms a crack C (see a solid line) in the glass substrate 1 along a line L (see a dotted line) for breaking the brittle substrate 1 is a scriber body that is movable in the XY plane. 6, a chip holder 7 supported by an air cylinder (not shown) built in the scriber body 6 so that the position thereof can be adjusted in the Z direction (vertical direction), and a super holder rotatably supported by the chip holder 7. And a hard wheel 8.
【００１２】（実施例の作用）次に、前記スクライバー
Ｓを用いてクラックＣを形成したガラス基板１を割断す
る方法を説明する。前記スクライバーＳを用いたスクラ
イブ工程では、ガラス基板１上を前記超硬ホイール８で
割断予定ラインＬに沿ってクラックＣを形成する。この
スクライブ工程でガラス基板１上に形成されたクラック
（基板分断用切り溝）Ｃの断面形状が図３に示されてい
る。このスクライブ工程によってつけられたクラック幅
（切り溝幅）は約７０〜１００μｍである。(Operation of Embodiment) Next, a method of cutting the glass substrate 1 in which the crack C is formed by using the scriber S will be described. In the scribing process using the scriber S, cracks C are formed on the glass substrate 1 along the planned line L for cutting with the carbide wheel 8. A cross-sectional shape of a crack (cutting groove for cutting the substrate) C formed on the glass substrate 1 in this scribing step is shown in FIG. The crack width (kerf width) provided by this scribing process is about 70 to 100 μm.
【００１３】前記スクライブ工程で形成されたガラス基
板１のクラックＣは、次のクラック成長工程により深さ
方向に成長する。すなわち、クラック成長工程では、前
記クラックＣに水を浸透させる。そして、このクラック
Ｃに水が浸透したガラス基板１を冷却する。クラックＣ
内の水が凍ることにより体積膨張した氷が、ガラス基板
１を押し広げる（図４参照）。このとき、クラックＣが
深さ方向に成長する。The crack C of the glass substrate 1 formed in the scribing step grows in the depth direction by the next crack growing step. That is, in the crack growth step, water penetrates into the crack C. Then, the glass substrate 1 in which water has penetrated into the crack C is cooled. Crack C
Ice that has been volume-expanded by freezing the water inside spreads the glass substrate 1 (see FIG. 4). At this time, the crack C grows in the depth direction.
【００１４】前記スクライブ工程で発生させたクラック
Ｃが、浸透水の固体化時の膨張によって深さ方向に成長
・進行することにより、ガラス基板１の割断が容易にな
る。このガラス基板１を従来の突起付プレスにより加圧
することにより、欠けや砕けの少ない分割ガラス基板を
得ることができる。例えば、図２に示すように幅８．２
ｍｍ、長さ２７８ｍｍのガラス基板１から４．１Ｒの曲
線を有する４．１ｍｍ幅の分割ガラス基板を２枚得るこ
とができ、ガラス基板１の割断精度は直線部、曲線部共
に±０．１ｍｍ程度に抑えることが可能である。電子デ
バイスに応用した本実施例では従来の方法で割断して得
られたガラス基板の曲線部、特に基板端部の曲線部にソ
ゲと呼ばれる１ｍｍ近い硝子の欠けや残りが、±０．１
ｍｍ程度に抑えられた。このことにより、余裕寸法を小
さく見積もることが可能となるので、サイズの小型化と
取り数多によるコストダウンが可能となる。The crack C generated in the scribing step grows and progresses in the depth direction due to the expansion when the permeated water is solidified, so that the glass substrate 1 can be easily cleaved. By pressing the glass substrate 1 with a conventional press with protrusions, it is possible to obtain a divided glass substrate with less chipping and breakage. For example, as shown in FIG.
It is possible to obtain two divided glass substrates having a width of 4.1 mm and having a curved line of 4.1R from the glass substrate 1 having a length of 278 mm and a length of 278 mm, and the cutting accuracy of the glass substrate 1 is ± 0.1 mm for both the linear portion and the curved portion. It can be suppressed to a certain degree. In this embodiment applied to an electronic device, a glass chip obtained by cleaving by a conventional method, in particular, a curved portion at the edge of the substrate has a glass defect of 1 mm or so called a soge of ± 0.1.
It was suppressed to about mm. As a result, it is possible to estimate the margin size to be small, so that it is possible to reduce the size and the cost due to the large number of devices.
【００１５】（変更例）以上、本発明の実施例を詳述し
たが、本発明は、前記実施例に限定されるものではな
く、特許請求の範囲に記載された本発明の要旨の範囲内
で、種々の小設計変更を行うことが可能である。(Modifications) The embodiments of the present invention have been described in detail above, but the present invention is not limited to the above-mentioned embodiments, and is within the scope of the gist of the present invention described in the claims. Thus, it is possible to make various small design changes.
【００１６】例えば、前記クラック成長工程を繰り返し
行うことにより、複数回のクラック成長工程のみでガラ
ス基板を割断することが可能である。また、本発明はガ
ラス基板以外の脆性基板にも適用することが可能であ
る。For example, by repeating the crack growth step, it is possible to cut the glass substrate only by a plurality of crack growth steps. Further, the present invention can be applied to brittle substrates other than glass substrates.
【００１７】[0017]
【発明の効果】前述の本発明は、下記の効果（Ｅ01）を
奏することができる。 （Ｅ01） 電子デバイス等の高精度を必要とする製品
を、スライシングで切断することなく、スクライブ工程
及び割断工程で曲線状に分断できるので、分断作業がス
ピードアップする。したがって、基板を分断して形成さ
れるイメージセンサ等の電子部品のコストダウンを図る
ことができる。The present invention described above can achieve the following effects (E01). (E01) Since a product such as an electronic device that requires high accuracy can be cut into a curved line in the scribing process and the cutting process without cutting by slicing, the cutting work speeds up. Therefore, the cost of electronic components such as an image sensor formed by dividing the substrate can be reduced.
【図１】 図１は本発明の一実施例のスクライバーの説
明図である。FIG. 1 is an explanatory diagram of a scriber according to an embodiment of the present invention.
【図２】 図２は同実施例の複合基板Ｂの割断予定ライ
ン（すなわち、クラックパターン）の説明図である。FIG. 2 is an explanatory diagram of a planned cleavage line (that is, a crack pattern) of the composite substrate B of the same example.
【図３】 図３は同実施例のスクライブ工程で形成され
たクラック（切り溝）を示す図である。FIG. 3 is a diagram showing cracks (cutting grooves) formed in the scribing process of the same example.
【図４】 図４は同実施例のクラック成長工程の説明図
である。FIG. 4 is an explanatory diagram of a crack growth process of the same example.
Ｃ…クラック、 １…脆性基板（ガラス基板）、 C ... crack, 1 ... brittle substrate (glass substrate),
───────────────────────────────────────────────────── フロントページの続き (72)発明者 篠崎 謙吾 神奈川県海老名市本郷2274番地 富士ゼロ ックス株式会社内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Kengo Shinozaki 2274 Hongo, Ebina City, Kanagawa Prefecture Fuji Xerox Co., Ltd.
Claims (1)
クラックを形成し、このクラックを成長させて前記脆性
基板を割断する脆性基板割断方法において、下記の要件
（Ｙ01），（Ｙ02）を備えたことを特徴とする脆性基板
割断方法、（Ｙ01） 温度変化により液体から固体に変
化するとともに固体になったときの体積膨張率が前記脆
性基板の体積膨張率よりも大きな割断用液体を前記クラ
ックに浸透させる液体浸透工程、（Ｙ02） 前記クラッ
クに浸透した割断用液体を固体に変化させて体積膨張さ
せることにより前記クラックを成長させるクラック成長
工程。1. A brittle substrate cleaving method for forming a crack on a surface of a brittle substrate along a line to be cleaved and growing the crack to cleave the brittle substrate, which comprises the following requirements (Y01) and (Y02): A brittle substrate cleaving method, characterized in that (Y01) the cracking liquid is cleaved with a liquid that has changed from a liquid to a solid due to a temperature change and has a volume expansion coefficient greater than that of the brittle substrate when becoming a solid. (Y02) A crack growth step of growing the cracks by converting the cleaving liquid that has penetrated into the cracks into a solid and expanding the volume.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33934592A JPH06183762A (en) | 1992-12-18 | 1992-12-18 | Method for cutting brittle substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33934592A JPH06183762A (en) | 1992-12-18 | 1992-12-18 | Method for cutting brittle substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH06183762A true JPH06183762A (en) | 1994-07-05 |
Family
ID=18326573
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP33934592A Pending JPH06183762A (en) | 1992-12-18 | 1992-12-18 | Method for cutting brittle substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH06183762A (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000025030A (en) * | 1998-07-10 | 2000-01-25 | Sumitomo Electric Ind Ltd | Ceramics substrate and its production |
| WO2005113212A1 (en) * | 2004-05-20 | 2005-12-01 | Mitsuboshi Diamond Industrial Co., Ltd. | Motherboard cutting method, motherboard scribing apparatus, program and recording medium |
| SG120973A1 (en) * | 2003-03-24 | 2006-04-26 | Nishiyama Stainless Chemical Co Ltd | Glass cutting method |
| US7785336B2 (en) | 2006-08-01 | 2010-08-31 | Abbott Medical Optics Inc. | Vacuum sense control for phaco pulse shaping |
| KR101030541B1 (en) * | 2003-12-29 | 2011-04-26 | 엘지디스플레이 주식회사 | Tool assembly in device for scribing /breaking liquid crystal display substrate |
| US8852138B2 (en) | 2002-10-21 | 2014-10-07 | Abbott Medical Optics Inc. | Modulated pulsed ultrasound power delivery system and method |
| US9788998B2 (en) | 1997-01-22 | 2017-10-17 | Abbott Medical Optics Inc. | Control of pulse duty cycle based upon footswitch displacement |
| US10245179B2 (en) | 2002-10-21 | 2019-04-02 | Johnson & Johnson Surgical Vision, Inc. | System and method for pulsed ultrasonic power delivery employing cavitation effects |
-
1992
- 1992-12-18 JP JP33934592A patent/JPH06183762A/en active Pending
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9788998B2 (en) | 1997-01-22 | 2017-10-17 | Abbott Medical Optics Inc. | Control of pulse duty cycle based upon footswitch displacement |
| JP2000025030A (en) * | 1998-07-10 | 2000-01-25 | Sumitomo Electric Ind Ltd | Ceramics substrate and its production |
| US10245179B2 (en) | 2002-10-21 | 2019-04-02 | Johnson & Johnson Surgical Vision, Inc. | System and method for pulsed ultrasonic power delivery employing cavitation effects |
| US10765557B2 (en) | 2002-10-21 | 2020-09-08 | Johnson & Johnson Surgical Vision, Inc. | Modulated pulsed ultrasonic power delivery system and method |
| US8852138B2 (en) | 2002-10-21 | 2014-10-07 | Abbott Medical Optics Inc. | Modulated pulsed ultrasound power delivery system and method |
| US9642745B2 (en) | 2002-10-21 | 2017-05-09 | Abbott Medical Optics Inc. | Modulated pulsed ultrasonic power delivery system and method |
| US9707127B2 (en) | 2002-10-21 | 2017-07-18 | Abbott Medical Optics Inc. | Modulated pulsed ultrasonic power delivery system and method |
| SG120973A1 (en) * | 2003-03-24 | 2006-04-26 | Nishiyama Stainless Chemical Co Ltd | Glass cutting method |
| KR101030541B1 (en) * | 2003-12-29 | 2011-04-26 | 엘지디스플레이 주식회사 | Tool assembly in device for scribing /breaking liquid crystal display substrate |
| WO2005113212A1 (en) * | 2004-05-20 | 2005-12-01 | Mitsuboshi Diamond Industrial Co., Ltd. | Motherboard cutting method, motherboard scribing apparatus, program and recording medium |
| JP4777881B2 (en) * | 2004-05-20 | 2011-09-21 | 三星ダイヤモンド工業株式会社 | Mother board cutting method, mother board scribing apparatus, program, and recording medium |
| US7785336B2 (en) | 2006-08-01 | 2010-08-31 | Abbott Medical Optics Inc. | Vacuum sense control for phaco pulse shaping |
| US8034067B2 (en) | 2006-08-01 | 2011-10-11 | Abbott Medical Optics Inc. | Vacuum sense control for phaco pulse shaping |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101043992B (en) | Brittle material scribing method and scribing apparatus | |
| US6541730B2 (en) | Method and apparatus for cutting a non-metal substrate by using a laser beam | |
| AU2001248858A1 (en) | Method of manufacturing disk substrate, and method and device for manufacturing optical disk | |
| DE69717635D1 (en) | METHOD FOR PRODUCING A CUTTING INSERT FOR CUTTING TOOL | |
| US5439723A (en) | Substrate for producing semiconductor wafer | |
| EP1189080A3 (en) | Method for making a planar optical waveguide | |
| JPH11224866A (en) | Laser dividing and cutting method | |
| JPH0845879A (en) | Method of cutting semiconductor wafer | |
| EP1609559A4 (en) | Laser beam machining method | |
| DE102005046479A1 (en) | Separation of brittle materials such as a semiconductor into parts uses a formed fracture inducing channel | |
| WO2002043124A3 (en) | Method for making a substrate in particular for optics, electronics or optoelectronics and resulting substrate | |
| WO2002046091A3 (en) | Method for producing a fluid component, fluid component and an analysis device | |
| JPH06183762A (en) | Method for cutting brittle substrate | |
| EP0969505A3 (en) | SOI substrate | |
| DE19753492A1 (en) | Improved scoring and breaking of hard-to-scratch materials | |
| CA2385211A1 (en) | Adhering member and method for producing adhering member | |
| CN102837369B (en) | Process method for green laser scribing sapphire | |
| EP1609558A4 (en) | Laser beam machining method | |
| FR2842023B1 (en) | METHOD FOR MANUFACTURING ANISOTROPIC CONDUCTIVE FILM WITH SHARP DRIVER INSERTS | |
| JPS566451A (en) | Deviding method of semiconductor device | |
| JP3319507B2 (en) | Diamond wafer chipping method | |
| JP2001113521A (en) | Method for forming scribe line | |
| JP2001255504A (en) | Method for cutting light-transmissive substrate of liquid crystal display panel | |
| JPH065703A (en) | Dividing method for element of semiconductor laser diode | |
| WO2004015362A3 (en) | Method for producing a structure comprising a narrow cutting edge or tip and cantilever beam provided with a structure of this type |