JPH06181265A - Storing package for semiconductor device - Google Patents

Abstract

PURPOSE:To hold a semiconductor device stably in good operational condition for a long time, by sealing a semiconductor device in a hermetic state completely and preventing a crack or a slit in a frame part even when outer force is applied to a metallic base. CONSTITUTION:A package for storing a semiconductor device 4 comprises a metallic base 1 having a mounting part 1a for mounting a semiconductor device 4, a frame member 2 detachable from the metallic base 1 and provided around the mounting part 1a for mounting the semiconductor device 4, and a metallic cover part 3 on the frame member 2 for blocking an opening of the frame member 2. The metallic cover part is made of metal having Young's modulus of 20000 Kg/mm<2> or above.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an improvement of a semiconductor element housing package for housing a semiconductor element.

[0002]

2. Description of the Related Art In recent years, as the performance of information processing apparatuses has increased, the density and integration of the semiconductor elements forming the information processing apparatuses have rapidly increased. Therefore, the amount of heat generated per unit area and unit volume of the semiconductor element increases during operation, and how to efficiently remove the heat is a problem in order to operate the semiconductor element normally and stably. .

Conventionally, as a method of removing heat generated by a semiconductor element, a metal base generally made of copper-tungsten alloy or the like and having a mounting portion on which the semiconductor element is mounted, and a metal base are mounted on the metal base. And a frame member made of an electrically insulating material such as an aluminum oxide sintered body that surrounds a mounting portion on which the semiconductor element is mounted, and is mounted on the frame member,
A semiconductor element housing package composed of a metal cover made of a metal material such as Kovar metal or 42 alloy that closes the opening of the frame member is prepared, and the semiconductor element is mounted and fixed on the semiconductor element mounting portion of the metal base. Then, the heat generated from the semiconductor element is absorbed by the metal substrate and the absorbed heat is diffused into the atmosphere.

A metallized metal layer is previously formed on both upper and lower surfaces of the frame member. The metallized metal layer deposited on the lower surface of the frame member is brazed with a metal base through a brazing material such as silver solder. The frame member is attached to the metal base by attaching the metal lid to the metallized metal layer adhered to the upper surface of the frame member by brazing the metal lid through a brazing material such as a gold-tin alloy. The lid-making body is attached to the upper surface of the frame member so as to close the opening of the frame member.

[0005]

However, this conventional package for accommodating a semiconductor element has a structure in which a semiconductor element is hermetically accommodated inside to form a semiconductor device and then the semiconductor device is mounted on an external electric circuit board. When an external force is applied to the metal substrate, the frame member is deformed by the external force and cracks or breaks occur, and as a result,
There is a drawback that the airtight sealing inside the semiconductor element housing package is broken due to cracks or breaks generated in the frame member, and the semiconductor element housed inside cannot be operated normally and stably for a long period of time. It was

[0006]

DISCLOSURE OF THE INVENTION The present invention has been devised in view of the above-mentioned drawbacks, and its object is to prevent the frame member from being cracked or broken even when an external force is applied to the metal substrate, and to store the semiconductor inside. An object of the present invention is to provide a package for accommodating a semiconductor element, which is capable of operating the semiconductor element normally and stably for a long period of time by completely hermetically sealing the element.

[0007]

According to the present invention, there are provided a metal base having a mounting portion on which a semiconductor element is mounted, and a mounting portion which is mounted on the metal base and on which the semiconductor element is mounted. A semiconductor element housing package comprising a surrounding frame member and a metal lid body attached to the frame member and closing the opening of the frame member, wherein the metal lid body is 20000 kg / mm ² or more Young. It is characterized by being formed of a metal material having a ratio.

[0008]

According to the semiconductor element housing package of the present invention, since the metal lid is made of a metal having a Young's modulus of 20000 Kg / mm ² or more which is not easily deformed, the semiconductor element is hermetically housed in the semiconductor device. After that, even if an external force is applied to the metal base of the semiconductor device and the frame member is deformed, the deformation is effectively prevented by the metal lid attached to the upper surface of the frame member. There is almost no crack or breakage due to deformation of the member, and it is possible to operate the semiconductor element housed inside completely and completely and hermetically sealing the inside of the package for housing the semiconductor element normally and stably for a long period of time. Become.

[0009]

The present invention will now be described in detail with reference to the embodiments shown in the accompanying drawings. FIG. 1 shows an embodiment of a semiconductor element storage package of the present invention, 1 is a metal base, 2 is a frame member,
3 is a metal lid. The metal base 1, the frame member 2, and the metal lid 3 constitute a container for accommodating the semiconductor element 4 inside.

The metal base 1 has a mounting portion 1a on the upper surface of which a semiconductor element 4 is mounted. The semiconductor element 4 is mounted and fixed on the mounting portion 1a with an adhesive. It

The metal base 1 functions as a support member for supporting the semiconductor element 4 and also dissipates heat generated during operation of the semiconductor element 4 into the atmosphere, and is made of a metal material such as a copper-tungsten alloy. ing.

The metal base 1 made of the copper-tungsten alloy has a thermal conductivity of 150 W / mK
When the semiconductor element 4 is mounted and fixed on the metal base 1 because it is high and it is easy to conduct heat, the metal base 1 directly conducts and absorbs the heat generated when the semiconductor element 4 operates, and at the same time absorbs the absorbed heat into the atmosphere. It is possible to dissipate well into the semiconductor element 4, and as a result, the semiconductor element 4 is always kept at a low temperature.
Can be operated normally and stably for a long period of time.

The metal substrate 1 made of the copper-tungsten alloy is made of, for example, tungsten powder (about 10 μm) 10
While press-molding at a pressure of 0 Kg / cm ² and calcining this in a reducing atmosphere at a temperature of about 2300 ° C., a porous tungsten sintered body was obtained, and then copper melted by heating at a temperature of 1100 ° C. It is manufactured by impregnating the porous portion of the tungsten sintered body by utilizing a capillary phenomenon.

Further, on the upper surface of the metal base 1, the metal base
The frame member 2 so as to surround the semiconductor element mounting portion 1a of 1
The metal base 1 and the frame member 2 are formed inside to form a space for housing the semiconductor element 4.

The frame member 2 attached to the metal substrate 1 is made of an electrically insulating material such as an aluminum oxide sintered body, a mullite sintered body, an aluminum nitride sintered body, and a silicon carbide sintered body. For example, when it is composed of an aluminum oxide sintered body, aluminum oxide (Al ₂ O ₃ ), silica (SiO ₂ ),
Calcia (CaO), magnesia (MgO), and other raw material powders are mixed with an appropriate organic solvent and solvent to form a slurry, which is then formed into a sheet using the conventionally known doctor blade method and calender roll method. To obtain a ceramic green sheet (ceramic green sheet), and thereafter, the ceramic green sheet is appropriately punched, laminated with a plurality of sheets, and fired at a high temperature (about 1600 ° C.).

The frame member 2 has tungsten on its lower surface,
A metallized metal layer 5 made of a refractory metal powder such as molybdenum or manganese is deposited and formed.The metallized metal layer 5 acts as a base metal layer when brazing and attaching the frame member 2 to the metal substrate 1. The frame member 2 is attached to the metal base 1 by brazing the metallized metal layer 5 and the upper surface of the metal base 1 with a brazing material such as silver brazing.

The metallized metal layer 5 is made of tungsten,
An appropriate organic solvent to a metal powder such as molybdenum, a metal paste obtained by adding and mixing a solvent is applied to a ceramic green sheet as the frame member 2 in advance in a predetermined pattern by a known screen printing method to form a frame. Element
It is adhered to the lower surface of 2.

The frame member 2 has a plurality of metallized wiring layers 6 embedded therein.
6 serves to connect the electrode of the semiconductor element 3 to the external lead terminal 7, and has the external lead terminal 7 at one end and the bonding wire 8 connected to the electrode of the semiconductor element 4 at the other end. Be worn.

The metallized wiring layer 6 is made of tungsten,
It is made of refractory metal powder such as molybdenum or manganese, and is embedded in the frame member 2 by the same method as the metallized metal layer 5 formed on the lower surface of the frame member 2.

Metallized wiring layer embedded in the frame member 2
The external lead terminal 7 is brazed and attached to one end of the external lead terminal 6 through a brazing material such as silver solder.
Has a function of electrically connecting each electrode of the semiconductor element 4 housed inside to an external electric circuit, and a metal such as Kovar metal (iron-nickel-cobalt alloy) or 42 alloy (iron-nickel alloy) is pin-shaped. What is made is used.

It should be noted that the external lead terminal 7 has a metal such as nickel or gold having excellent corrosion resistance, good conductivity, and good wettability (reactivity) with the brazing material on the outer surface of the outer lead terminal 7 by the plating method.
By layering the external lead terminals 7 to a thickness of 20.0 μm, oxidative corrosion of the external lead terminals 7 can be effectively prevented and good electrical connection between the external lead terminals 7 and the external electric circuit can be achieved. Therefore, the external lead terminal 7 is plated with a metal such as nickel or gold at 1.0 to 20.0 μm on its outer surface.
It is preferable that the layers are laminated in a thickness of m.

A metallized metal layer 9 is further formed on the upper surface of the frame member 2, and the metallized metal layer 9 serves as a base metal layer when the metal lid 3 is attached to the frame member 2. Working and metallized metal layer 9 with metal lid 3
The semiconductor element 4 is hermetically housed in the container from the metal base body 1, the frame member 2, and the metal lid 3 by brazing and attaching the above with a brazing material such as a gold-tin alloy.

The metallized metal layer 9 deposited on the upper surface of the frame member 2 is made of refractory metal powder such as tungsten, molybdenum and manganese, and is similar to the metallized metal layer 5 deposited on the lower surface of the frame member 2. It is formed on the upper surface of the frame member 2 by a method.

Further, the metal lid 3 which is brazed and attached to the metallized metal layer 9 of the frame member 2 through a brazing material has a Young's modulus of 20000 Kg / mm ² or more, specifically, tungsten, molybdenum, Made of copper-tungsten alloy, etc.,
The metal lid 3 closes the opening of the frame member 2 and
4 acts to hermetically seal the inside of the container.

The Young's modulus of the metal lid 3 is 20000K
Since g / mm ² or more is difficult to deform, the semiconductor element is hermetically housed inside the container to form a semiconductor device, and then an external force is applied to the metal base 1 to deform the frame member 2 even if the frame member 2 is deformed. Since the metal lid 2 that is difficult to deform is attached to the upper surface of the member 2, the deformation is effectively prevented, and as a result, the frame member 2 has almost no cracks or fractures due to the deformation. Since the hermetically sealed inside of the container is complete, the semiconductor element 4 housed inside can be operated normally and stably for a long period of time.

The Young's modulus of the metallic lid 3 is 20000K.
If it is less than g / mm ² , when an external force is applied to the metal substrate 1, the external force causes the frame member 2 to be deformed and cracks or breaks occur, which breaks the hermetic seal inside the container that houses the semiconductor element. Will end up. Therefore, Young's modulus of the metallic lid 3 is specified to 20000 Kg / mm ² or more.

Thus, according to the semiconductor element housing package of the present invention, the semiconductor element 4 is mounted and fixed on the semiconductor element mounting portion 1a of the metal substrate 1 to which the frame member 2 is attached by the adhesive, By connecting each electrode of the element 4 to the metallized wiring layer 6 via the bonding wire 8 and joining the metal lid 3 to the upper surface of the frame member 2 via the brazing material, a semiconductor device as a product is obtained.

The present invention is not limited to the above-mentioned embodiments, and various modifications can be made without departing from the gist of the present invention.

[0029]

According to the semiconductor element housing package of the present invention, since the metal lid is made of a metal which has a Young's modulus of 20000 Kg / mm ² or more and is hard to deform, the semiconductor element is hermetically housed inside, After forming the semiconductor device, an external force is applied to the metal base of the semiconductor device, and even if the frame member is deformed, the deformation is effectively prevented by the metal lid attached to the upper surface of the frame member. The frame member has almost no cracks or breaks due to deformation, and the semiconductor element housed inside the semiconductor element housing package is completely hermetically sealed and can operate normally and stably for a long period of time. It will be possible.

[Brief description of drawings]

FIG. 1 is a cross-sectional view showing an embodiment of a semiconductor element housing package of the present invention.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 ... Metal substrate 1a ... Semiconductor element mounting part 2 ... Frame member 3 ... Metal lid 4 ... Semiconductor element 6 ... Metallized wiring layer 7 ... External lead terminals

Claims (1)

[Claims] 1. A metal base having an upper surface on which a semiconductor element is mounted, a frame member attached to the metal base and surrounding the mounting section on which the semiconductor element is mounted, A package for storing a semiconductor element, comprising a metal lid attached to a frame member and closing an opening of the frame member, wherein the metal lid is made of a metal material having a Young's modulus of 20000 Kg / mm ² or more. A package for housing a semiconductor element, which is characterized in that