JPH06176903A - Electrode structure of cr-based cermet thin film - Google Patents
Electrode structure of cr-based cermet thin filmInfo
- Publication number
- JPH06176903A JPH06176903A JP4350375A JP35037592A JPH06176903A JP H06176903 A JPH06176903 A JP H06176903A JP 4350375 A JP4350375 A JP 4350375A JP 35037592 A JP35037592 A JP 35037592A JP H06176903 A JPH06176903 A JP H06176903A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- film
- electrode
- based cermet
- cermet thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/05001—Internal layers
- H01L2224/05075—Plural internal layers
- H01L2224/0508—Plural internal layers being stacked
- H01L2224/05082—Two-layer arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/05001—Internal layers
- H01L2224/05099—Material
- H01L2224/051—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/05155—Nickel [Ni] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/05001—Internal layers
- H01L2224/05099—Material
- H01L2224/051—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/05157—Cobalt [Co] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0555—Shape
- H01L2224/05556—Shape in side view
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/05624—Aluminium [Al] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/05647—Copper [Cu] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01024—Chromium [Cr]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01028—Nickel [Ni]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Details Of Resistors (AREA)
- Non-Adjustable Resistors (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は歪ゲージや発熱抵抗体等
に使用されるＣｒ系サーメット薄膜の電極構造に関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a Cr-based cermet thin film electrode structure used for strain gauges, heating resistors and the like.
【０００２】[0002]
【従来の技術】従来、Ｃｒ−Ｏ、Ｃｒ−Ｓｉ−Ｏ、また
はＣｒ−Ａｌ−Ｏ等を構成成分とするＣｒ系サーメット
薄膜を歪ゲージや電熱抵抗素子として使用する場合に
は、Ｃｒ系サーメット薄膜上に例えば半田付け用の電極
を形成することが必要となる。この場合、通常、サーメ
ット薄膜上に、ＮｉまたはＣｕ等の金属膜を蒸着、スパ
ッタリング、湿式メッキ等の方法で成膜し、場合によっ
てはさらに半田濡れ性を良くするためにＡｕ等の金属を
薄く成膜した後、半田付けをして電極を取り出してい
る。2. Description of the Related Art Conventionally, when a Cr-based cermet thin film containing Cr-O, Cr-Si-O, Cr-Al-O or the like as a constituent is used as a strain gauge or an electrothermal resistance element, a Cr-based cermet is used. For example, it is necessary to form electrodes for soldering on the thin film. In this case, usually, a metal film such as Ni or Cu is formed on the cermet thin film by a method such as vapor deposition, sputtering, and wet plating. In some cases, a metal such as Au is thinned to further improve solder wettability. After forming the film, the electrode is taken out by soldering.
【０００３】[0003]
【発明が解決しようとする課題】ところが、上記従来の
構成では、半田とＮｉあるいはＣｕとの密着性は優れて
いるものの、酸化物であるサーメット薄膜とＮｉあるい
はＣｕの間の密着が不十分で、当該部分での剥がれが生
じやすいという問題があった。However, in the above-mentioned conventional structure, although the adhesion between the solder and Ni or Cu is excellent, the adhesion between the cermet thin film which is an oxide and Ni or Cu is insufficient. However, there is a problem that peeling is likely to occur at the portion.
【０００４】さらに、サーメット薄膜を酸化雰囲気（酸
素、空気、または水溶液中など）に露出したり、処理を
行ったりした場合、サーメット薄膜表面が酸化してＣｒ
Ｏ2リッチとなり、上述したサーメット薄膜と金属膜と
の密着性の低下を助長するという不具合があった。Further, when the cermet thin film is exposed to an oxidizing atmosphere (oxygen, air, or an aqueous solution, etc.) or treated, the surface of the cermet thin film is oxidized to cause Cr.
There is a problem that it becomes O 2 rich, which promotes the above-mentioned deterioration of the adhesion between the cermet thin film and the metal film.
【０００５】本発明は上記実情に鑑みてなされたもので
あり、その目的は、酸化物を含み、しかも表面に酸化膜
を形成しやすいＣｒ系サーメット薄膜に接合されて高い
密着性を示し、機械的強度に優れた電極構造を提供する
ことにある。The present invention has been made in view of the above circumstances, and an object thereof is to bond a Cr-based cermet thin film containing an oxide, which easily forms an oxide film on the surface, to exhibit high adhesion, It is to provide an electrode structure excellent in dynamic strength.
【０００６】[0006]
【課題を解決するための手段】本発明の構成を図１で説
明する。基板１上に形成したＣｒ系サーメット薄膜２の
表面には、ＣｒまたはＣｒを主成分とする合金の薄膜か
らなる密着層３を設けてある。該密着層３上には、半田
付けまたはワイヤボンディングを行うためのベースとな
るＮｉ、ＣｕまたはＡｌよりなる電極膜４を形成してあ
る。The structure of the present invention will be described with reference to FIG. On the surface of the Cr-based cermet thin film 2 formed on the substrate 1, an adhesion layer 3 made of a thin film of Cr or an alloy containing Cr as a main component is provided. An electrode film 4 made of Ni, Cu or Al is formed on the adhesion layer 3 as a base for soldering or wire bonding.
【０００７】[0007]
【作用】上記構成において、上記密着層３はＣｒまたは
Ｃｒを主成分とする合金からなり、Ｃｒ系サーメット薄
膜２と同一の元素を主たる構成成分とする。このため、
密着層３はサーメット薄膜２に対し良好な密着性を有
し、一方で、同じ金属膜である電極膜４に対する密着性
にも優れる。従って、サーメット薄膜２と電極膜４との
間に挿入されて電極部の接合強度を大幅に向上させ、剥
離等の発生を抑制する。In the above structure, the adhesion layer 3 is made of Cr or an alloy containing Cr as a main component, and contains the same elements as those of the Cr-based cermet thin film 2 as main constituent components. For this reason,
The adhesion layer 3 has good adhesion to the cermet thin film 2, and also has excellent adhesion to the electrode film 4, which is the same metal film. Therefore, it is inserted between the cermet thin film 2 and the electrode film 4 to significantly improve the bonding strength of the electrode portion and suppress the occurrence of peeling or the like.
【０００８】[0008]
【実施例】図１に本発明の一実施例を示す。図におい
て、基板１上には、Ｃｒ−Ｏ、Ｃｒ−Ｓｉ−Ｏ、または
Ｃｒ−Ａｌ−Ｏ等を構成成分とするＣｒ系サーメット薄
膜２が形成してある。該サーメット薄膜２上には密着層
３が形成してある。上記密着層３は純Ｃｒ、あるいはＣ
ｒを主成分とする合金からなり、Ｃｒを主成分とする合
金としては具体的にはＣｒ−Ｃｕ、Ｃｒ−Ｍｏ等が挙げ
られる。密着層３の膜厚は、通常１０〜１００nm程度で
あり、膜厚がこれより薄いと成膜の安定性が損なわれ、
厚くするのは経済的に不利である。さらに上記密着層３
上には、半田付けまたはワイヤボンディングのベースと
なるＮｉ、ＣｕまたはＡｌからなる電極膜４を成膜して
ある。FIG. 1 shows an embodiment of the present invention. In the drawing, a Cr-based cermet thin film 2 having Cr-O, Cr-Si-O, Cr-Al-O or the like as a constituent component is formed on a substrate 1. An adhesion layer 3 is formed on the cermet thin film 2. The adhesion layer 3 is pure Cr or C
The alloy containing r as a main component, and specific examples of the alloy containing Cr as a main component include Cr—Cu and Cr—Mo. The film thickness of the adhesion layer 3 is usually about 10 to 100 nm, and if the film thickness is smaller than this, the stability of film formation is impaired.
It is economically disadvantageous to make thick. Furthermore, the adhesion layer 3
An electrode film 4 made of Ni, Cu or Al, which serves as a base for soldering or wire bonding, is formed on the upper surface.
【０００９】半田付けの際には、上記電極膜４上に直接
半田付けするか、あるいは、さらに半田濡れ性を良くす
るために、上記電極膜４上にＡｕ、Ａｇ等の金属薄膜５
を積層した後、上記金属薄膜５上に半田６付けしてもよ
い。なお、電極膜４にＡｌを使用した場合には、通常、
金属薄膜５を用いず、超音波で表面のＡｌ2 ０3 膜を破
りながらアルミ半田（特殊半田）を付ける。At the time of soldering, the electrode film 4 is directly soldered, or in order to improve the solder wettability, a metal thin film 5 of Au, Ag or the like is formed on the electrode film 4.
After stacking, the solder 6 may be attached onto the metal thin film 5. When Al is used for the electrode film 4, usually,
Instead of using the metal thin film 5, aluminum solder (special solder) is applied while ultrasonically breaking the Al 2 O 3 film on the surface.
【００１０】上記積層膜の成膜には、通常の真空成膜
法、例えば蒸着、スパッタリング、または減圧ＣＶＤ法
等が使用できる。特に、上記密着層３を成膜した後、そ
のまま真空を破らずに上記電極膜４、金属薄膜５を連続
的に成膜することが望ましい。これにより、上記密着層
３表面が酸化して表面にＣｒＯ2 層が形成されることを
抑制し、上記密着層３と電極膜４、さらに電極膜４と金
属薄膜５各層間の密着性をより向上させることができ
る。For forming the above-mentioned laminated film, a usual vacuum film forming method such as vapor deposition, sputtering, or low pressure CVD method can be used. In particular, after forming the adhesion layer 3, it is desirable to continuously form the electrode film 4 and the metal thin film 5 without breaking the vacuum. Thereby, the surface of the adhesion layer 3 is prevented from being oxidized and a CrO 2 layer is formed on the surface, and the adhesion between the adhesion layer 3 and the electrode film 4, and between the electrode film 4 and the metal thin film 5 is further improved. Can be improved.
【００１１】本発明の効果を調べるため、次のようにし
て積層膜を作製した。基板１上に形成されたＣｒ系サー
メット薄膜２の上に、まず密着層３として純Ｃｒの膜を
スパッタリング法で５０〜１００nmの膜厚に成膜し、そ
のまま真空を破らずに半田付けのベースとなるＮｉ層を
スパッタリング法で２００〜６００nmの膜厚に成膜して
電極膜４とした。さらに、そのまま真空を破らずに半田
濡れ性を良くするためのＡｕ層を３０〜１５０nmの膜厚
に連続して成膜して、金属薄膜５とし、Ｃｒ−Ｎｉ−Ａ
ｕの３層からなる積層膜を形成した。In order to investigate the effect of the present invention, a laminated film was prepared as follows. On the Cr-based cermet thin film 2 formed on the substrate 1, first, a pure Cr film is formed as the adhesion layer 3 to a film thickness of 50 to 100 nm by a sputtering method, and the soldering base is used as it is without breaking the vacuum. A Ni layer to be formed was formed into a film having a thickness of 200 to 600 nm by a sputtering method to form an electrode film 4. Further, an Au layer for improving solder wettability without breaking the vacuum is continuously formed in a film thickness of 30 to 150 nm to form a metal thin film 5, and Cr-Ni-A is used.
A laminated film composed of three u layers was formed.
【００１２】次に、上記のようにして得られた積層膜上
に半田６を盛り、これを溶解して銅線７を半田付けした
後、引っ張り試験を行った。その結果、膜の単位面積当
たりに換算した引っ張り力：約２５０〜３００gf/mm2に
おいて銅線７が根元から引きちぎれた。密着層３とサー
メット薄膜２の界面における剥がれは生じなかった。こ
れに対し、密着層３を形成しない従来の構成の積層膜で
同様の引っ張り試験を行ったところ、引張り力：０〜３
０gf/mm2でサーメット薄膜２とＮｉ電極膜４との間で剥
がれが生じた。かくして、本発明の構成を用いることに
より、電極膜４とサーメット薄膜２の密着性が著しく向
上していることがわかる。Next, a solder 6 was put on the laminated film obtained as described above, and this was melted to solder a copper wire 7, and then a tensile test was conducted. As a result, the copper wire 7 was torn from the root when the tensile force converted per unit area of the film was about 250 to 300 gf / mm 2 . No peeling occurred at the interface between the adhesive layer 3 and the cermet thin film 2. On the other hand, when a similar tensile test was performed on a laminated film having a conventional structure in which the adhesion layer 3 was not formed, the tensile force was 0 to 3
At 0 gf / mm 2 , peeling occurred between the cermet thin film 2 and the Ni electrode film 4. Thus, it can be seen that the adhesiveness between the electrode film 4 and the cermet thin film 2 is remarkably improved by using the constitution of the present invention.
【００１３】なお、半田溶解の方法としては、熱風、赤
外線、ホットプレート、コテ等のどの方法を用いてもよ
く、いずれも同様の結果が得られた。As a method for melting the solder, any method such as hot air, infrared ray, hot plate, and iron may be used, and the same result was obtained.
【００１４】[0014]
【発明の効果】以上のように、本発明によれば、Ｃｒ系
サーメット薄膜と電極膜の間の密着性を飛躍的に向上さ
せることができる。従って、良好な電気的特性と機械的
強度を有し、歪ゲージや発熱抵抗体等の電極として好適
に使用できる。As described above, according to the present invention, the adhesion between the Cr-based cermet thin film and the electrode film can be dramatically improved. Therefore, it has good electrical characteristics and mechanical strength, and can be suitably used as electrodes such as strain gauges and heating resistors.
【図１】本発明の一実施例を示す電極の部分拡大断面図
である。FIG. 1 is a partially enlarged sectional view of an electrode showing an embodiment of the present invention.
１ 基板 ２ Ｃｒ系サーメット薄膜 ３ 密着層 ４ 電極膜 ５ 金属薄膜 ６ 半田 ７ 銅線 1 Substrate 2 Cr-based cermet thin film 3 Adhesion layer 4 Electrode film 5 Metal thin film 6 Solder 7 Copper wire
Claims (1)
の表面に、ＣｒまたはＣｒを主成分とする合金の薄膜か
らなる密着層を設け、該密着層上に、半田付けまたはワ
イヤボンディングを行うためのベースとなるＮｉ、Ｃｕ
またはＡｌよりなる電極膜を形成したことを特徴とする
Ｃｒ系サーメット薄膜の電極構造。1. A Cr-based cermet thin film formed on a substrate is provided with an adhesive layer made of a thin film of Cr or an alloy containing Cr as a main component, and soldering or wire bonding is performed on the adhesive layer. Ni, Cu which is the base of
Alternatively, an electrode structure of a Cr-based cermet thin film is characterized in that an electrode film made of Al is formed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4350375A JPH06176903A (en) | 1992-12-03 | 1992-12-03 | Electrode structure of cr-based cermet thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4350375A JPH06176903A (en) | 1992-12-03 | 1992-12-03 | Electrode structure of cr-based cermet thin film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH06176903A true JPH06176903A (en) | 1994-06-24 |
Family
ID=18410065
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4350375A Withdrawn JPH06176903A (en) | 1992-12-03 | 1992-12-03 | Electrode structure of cr-based cermet thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH06176903A (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5455195A (en) * | 1994-05-06 | 1995-10-03 | Texas Instruments Incorporated | Method for obtaining metallurgical stability in integrated circuit conductive bonds |
| EP3690389A4 (en) * | 2017-09-29 | 2021-07-21 | Minebea Mitsumi Inc. | Strain gauge |
| US11454488B2 (en) | 2017-09-29 | 2022-09-27 | Minebea Mitsumi Inc. | Strain gauge with improved stability |
| US11542590B2 (en) | 2017-09-29 | 2023-01-03 | Minebea Mitsumi Inc. | Strain gauge |
| US11543309B2 (en) | 2017-12-22 | 2023-01-03 | Minebea Mitsumi Inc. | Strain gauge and sensor module |
| US11692806B2 (en) | 2017-09-29 | 2023-07-04 | Minebea Mitsumi Inc. | Strain gauge with improved stability |
| US11747225B2 (en) | 2018-04-05 | 2023-09-05 | Minebea Mitsumi Inc. | Strain gauge with improved stability and stress reduction |
| US11774303B2 (en) | 2018-10-23 | 2023-10-03 | Minebea Mitsumi Inc. | Accelerator, steering wheel, six-axis sensor, engine, bumper and the like |
-
1992
- 1992-12-03 JP JP4350375A patent/JPH06176903A/en not_active Withdrawn
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5455195A (en) * | 1994-05-06 | 1995-10-03 | Texas Instruments Incorporated | Method for obtaining metallurgical stability in integrated circuit conductive bonds |
| EP3690389A4 (en) * | 2017-09-29 | 2021-07-21 | Minebea Mitsumi Inc. | Strain gauge |
| US11454488B2 (en) | 2017-09-29 | 2022-09-27 | Minebea Mitsumi Inc. | Strain gauge with improved stability |
| US11542590B2 (en) | 2017-09-29 | 2023-01-03 | Minebea Mitsumi Inc. | Strain gauge |
| US11543308B2 (en) | 2017-09-29 | 2023-01-03 | Minebea Mitsumi Inc. | Strain gauge |
| US11692806B2 (en) | 2017-09-29 | 2023-07-04 | Minebea Mitsumi Inc. | Strain gauge with improved stability |
| US11702730B2 (en) | 2017-09-29 | 2023-07-18 | Minebea Mitsumi Inc. | Strain gauge |
| US11543309B2 (en) | 2017-12-22 | 2023-01-03 | Minebea Mitsumi Inc. | Strain gauge and sensor module |
| US11747225B2 (en) | 2018-04-05 | 2023-09-05 | Minebea Mitsumi Inc. | Strain gauge with improved stability and stress reduction |
| US11774303B2 (en) | 2018-10-23 | 2023-10-03 | Minebea Mitsumi Inc. | Accelerator, steering wheel, six-axis sensor, engine, bumper and the like |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0070435B1 (en) | Semiconductor device comprising a semiconductor substrate bonded to a mounting means | |
| JPS60257160A (en) | Semiconductor device | |
| JPH06176903A (en) | Electrode structure of cr-based cermet thin film | |
| JP3078544B2 (en) | Electronic component package, lid material for the lid, and method for manufacturing the lid material | |
| US4513905A (en) | Integrated circuit metallization technique | |
| JP2937688B2 (en) | Semiconductor device | |
| JPH07315970A (en) | Metallic thin film laminated ceramic substrate | |
| EP0264128A2 (en) | Jumper chip for semiconductor devices | |
| JP2000068396A (en) | Cover for hermetic seal | |
| JPS6034257B2 (en) | Electronic components with gold conductive layer | |
| JP2594627Y2 (en) | Terminal pattern of electronic components | |
| JP2001196393A (en) | Method for manufacturing semiconductor device | |
| JPH0629769A (en) | Chip type electronic parts | |
| JPS58182839A (en) | Semiconductor device | |
| JPH04304369A (en) | Chromium-silicon oxide target material | |
| JPS5810868B2 (en) | semiconductor strain transducer | |
| JPH04294890A (en) | Al-si-ti ternary alloy brazing filler metal | |
| JPS61156825A (en) | Semiconductor device | |
| JPS62112051A (en) | Oxygen sensor | |
| JP3211455B2 (en) | Glass parts joining structure | |
| CN114557144A (en) | Method for producing metal-ceramic substrate, soldering system and metal-ceramic substrate produced by said method | |
| JP2000353932A (en) | Electronic part and manufacture of the same | |
| JPH0793327B2 (en) | Semiconductor device | |
| JPS61156823A (en) | Semiconductor device | |
| JPH05258689A (en) | Driving semiconductor element built-in type fluorescent character display panel |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A300 | Withdrawal of application because of no request for examination |
Free format text: JAPANESE INTERMEDIATE CODE: A300 Effective date: 20000307 |