JPH06174784A - Burn-in system for semiconductor device - Google Patents

Abstract

PURPOSE:To allow burn-in processing without sacrifice of overall mechanical strength of an IC provided with lead frame. CONSTITUTION:An IC 70 provided with lead frame is subjected to pretest and a detection hole 72 is made on the lead frame 61 of a failed IC 62. When the detection hole 72 is detected by a detecting means 30, i.e., a detection pin 100 of an IC socket 82, at the time of burn-in processing a connecting means 131, i.e., the contact rod 110 of the 1C socket 82, releases electrical connection between a contact electrode 85 and an electrode pin 102 in response to the detecting means 130. Consequently, no potential nor signal is fed from a burn-in system processing section 132 to the lead terminal 63 of falied IC 62.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a burn-in device which causes a thermal and electrical overload to a semiconductor integrated circuit before the final test of the semiconductor integrated circuit to cause an initial failure, and a burn-in method using the burn-in device.

[0002]

2. Description of the Related Art In the defective product generation rate of semiconductor integrated circuits (hereinafter abbreviated as "IC"), the defective product generation rate is particularly high in the initial stage, and the defective product generation rate becomes low after a certain period of time. This is because defective IC products due to the manufacturing process are likely to occur particularly in the initial stage. For example, in an IC or the like having an oxide film defect, dielectric breakdown occurs due to energization for a certain time. For this reason, in order to remove the IC having the initial failure before the shipping test, a burn-in process is performed in which the initial failure is exposed by applying thermal and electrical overload to the IC. This burn-in process is disclosed in Japanese Patent Laid-Open No. 4-263450.

FIG. 11 is a flow chart showing a manufacturing process of the IC 2 including burn-in processing by a conventional burn-in apparatus and method. FIG. 12 is a plan view of an IC 10 with a lead frame used in the conventional burn-in process. In the flowchart of FIG. 11, the process is started at step a1. At step a2, die bonding for fixing the IC chip to the lead frame 1 is performed. At step a3, wire bonding is performed to connect the lead terminal 3 of the lead frame 1 and the electrode of the IC chip. At step a4, the IC chip on the lead frame 1 is sealed with a package made of resin or ceramic. At step a5, only the lead tip 4 and the tie bar 5 are cut and removed from the lead frame 1 so that the lead terminals 3 of the IC 2 are not connected to each other. At this time, the IC 2 is supported only by the IC support portion 6 of the lead frame 1. In step a6, a pre-test for inspecting open / short of IC2 is performed to determine whether or not it is a defective product. The IC 2 determined to be defective by this pretest is removed from the lead frame 1 in step a7. If it is determined in step a6 that the product is non-defective, the IC2 connected to the lead frame 1 is sent to the process in step a8 as it is. In this way, step a8
By performing the pre-test in the process up to the burn-in process of 1) and removing the defective IC2, damage to the burn-in processing device due to the defective IC2 is prevented. At step a8, burn-in processing is performed. This burn-in process causes thermal and electrical overload to the IC 2 in the pre-process of the final test, and makes the initial defect manifest. In step a9, a final test for shipping the product is performed. Step a1
At 0, the supporting portion 6 of the lead frame 1 is cut, and the IC 2 is taken out from the lead frame 1. At step a11, bending for bending the lead terminal 3 of the IC 2 is performed, and the IC 2 is ready for shipment as a product.

FIG. 13 is a perspective view of an IC 10 with a lead frame used in a conventional burn-in process. The plurality of ICs 2 are respectively supported by the IC support portions 6 at four places as described above. Further, the IC 2 is lead-cut and tie-bar cut in order to perform the pretest and the burn-in process as described above, and the lead terminal 3 is
It is separated from the adjacent lead terminal 3 and lead frame 1. Further, the lead frame 1 is provided with a plurality of positioning holes 11. In the pre-process of the burn-in process, as described above, a pre-test for inspecting an open or short between the lead terminals 3 of the IC 10 with a lead frame is performed. The defective IC 12 determined in the pre-test is cut and punched with the IC supporting portion 6 of the lead frame 10 as a cutting boundary, and the IC with the lead frame is cut.
Remove from 10. In this case, when there are many defective ICs 2 fixed to the lead frame 1, most defective ICs 12 are removed from the lead frame 1 as shown in FIG.

FIG. 15 is a perspective view of a burn-in board 21 used in a conventional burn-in process. On the burn-in board 21, a plurality of IC sockets 22 and resistors 23 are arranged at equal intervals. The burn-in board 21 is mounted in a burn-in device described later, and burn-in processing is performed. A plurality of contact electrodes 25, positioning pins 26 and escape holes 27 are formed in the IC socket body 24 of the IC socket 22. Also, I
At one end of the C-socket body 24, a lid 30 which is rotatable in the direction of reference numeral 28 is attached. The lid 30 is provided with a plurality of lead pressing portions 31 and escape holes 32. When the lid 30 is rotated in the direction of the reference numeral 28 and is closed with the IC socket body 24, the engagement lever 33 formed on the lid 30 and the engagement portion 34 formed on the IC socket body 24 are Engaged. Further, the IC socket body 24 and the locking portion 34, and the lid 30 and the locking lever 33.
Are integrally molded, and they are all made of the same material having electrical insulation. In addition, burn-in board 2
A plurality of fuses 35 for circuit protection and a connector terminal 36 for circuit connection with a burn-in device to be described later are formed on the circuit board 1.

In order to perform the burn-in process, the IC 10 with lead frame is moved in the direction indicated by reference numeral 40, and the positioning pins 26 on the IC socket body 24 corresponding to the plurality of positioning holes 11 of the lead frame 1 are inserted. Then, it is mounted on the IC socket body 24. IC at this time
2 is positioned with respect to the IC socket body 24, and I
The plurality of lead terminals 3 of C2 and the corresponding contact electrodes 25 of the IC socket body 24 are in contact with each other. Further, the package portion below the IC 2 is housed in the escape hole 27. Next, when the lid 30 is rotated in the direction of the reference numeral 28, the locking lever 33 and the locking portion 34 are engaged with each other, and the lid 30 and the IC socket body 24 are engaged with each other. At this time, the lead pressing portions 31 of the lid 30 press the corresponding contact electrodes 25 of the IC socket body 24.
At this time, the contact electrode 25 of the IC socket 24 main body
Has elasticity, the contact electrode 25 and the IC
The two lead terminals 3 contact each other while being pressed from above and below. Therefore, the contact state between the contact electrode 25 of the IC socket body 24 and the lead terminal 3 of the IC 2 becomes good. As a result, the contact electrode 25 and the lead terminal 3 of the IC 2 are electrically connected. Further, the package portion above the IC 2 is housed in the escape hole 32 of the lid 30.

FIG. 16 shows an IC with a lead frame on the IC socket 22 of the conventional burn-in board 21.
FIG. 10 shows a sectional view of a state in which 10 is positioned. Figure 17
In the IC socket 22 shown in FIG.
A cross-sectional view in a state where the lid 30 and the IC socket body 24 are closed by rotating in the direction of the arrow indicated by the reference numeral 28 is shown. In FIG. 17, the locking lever 33 and the locking portion 34 are engaged and the state is maintained. The engaged state can be released by rotating the locking lever 33 in the direction of reference numeral 40. Also, I
IC socket body 2 in contact with the lead terminal 3 of C2
The lower end of each corresponding contact electrode 25 of 4 is soldered to the wiring pattern of the burn-in board 21 and electrically connected. Each wiring pattern of the burn-in board 21 is electrically connected to the corresponding connector terminal 36 of the burn-in board 21 via the resistor 23 and the fuse 35. Therefore, each lead terminal 3 of IC2
And the corresponding connector terminal 36 of the burn-in board 21 are electrically connected.

FIG. 18 shows a perspective view of a conventional burn-in device 50. In the burn-in device 50, a plurality of burn-in board racks 51 are arranged at equal intervals. Burn-in board 2 with IC10 with lead frame
1. Burn-in board rack 5 of burn-in device 50
1 sequentially in the direction indicated by reference numeral 52. On the back surface 53 of the burn-in device 50, the same number of connectors as the burn-in racks 51 are installed to connect to the connector terminals 36 of the burn-in board 21. Further, a potential and a signal for performing a burn-in process are applied to this connector from the burn-in device 50. When the burn-in board 21 is mounted on the burn-in rack 51, the connector terminals 36 of the burn-in board rack 51 and the connectors on the back surface 53 of the burn-in device 50 are connected. Therefore, the lead terminals 3 of the IC 2 mounted on the burn-in board 21 and the burn-in device 50 are electrically connected. Next, the burn-in device 50 gives a potential or a signal to each lead terminal 3 of the IC 2 in order to perform the burn-in process. At this time, in the IC 10 with the lead frame, the IC 12 that has become defective as a result of the pre-test is cut, punched and removed, so that it is not energized.

[0009]

In the conventional IC burn-in apparatus and method, the I-type is used in the pre-test of the previous step.
When a defect of C is detected, the IC support portion of the lead frame is cut and the IC is removed from the lead frame. When a defective IC occupies the majority of the plurality of ICs connected to the lead frame, the defective IC is removed, so that the mechanical strength of the entire IC with the lead frame decreases. Therefore, an operation error occurs in inserting and removing the IC with the lead frame into and from the IC socket of the burn-in board, and the lead frame and its positioning hole are deformed due to thermal stress in the burn-in process. Therefore, the above-mentioned work error increases the work time, and the correction work for the deformation of the lead frame and its positioning hole is required, which increases the number of man-hours in the burn-in process.

An object of the present invention is an IC with a lead frame.
It is an object of the present invention to provide a burn-in apparatus and method for a semiconductor device, which can perform burn-in processing without lowering the overall mechanical strength.

[0011]

SUMMARY OF THE INVENTION The present invention is a burn-in device for a semiconductor device, wherein a plurality of semiconductor devices each formed on a lead frame are processed while being mechanically connected to the lead frame. A plurality of connecting means for individually mounting and connecting each of the semiconductor devices to the connecting means for performing electrical connection necessary for burn-in processing, and at a predetermined position in the vicinity of each connecting means of the lead frame. , A detection unit for detecting whether or not a defect display indicating that the semiconductor device is defective is added, and a connection unit mounted with a semiconductor device that responds to the output from the detection unit and does not detect the defect display. A burn-in device for a semiconductor device, the burn-in device including a processing means for performing a burn-in process while energizing the device.

Further, according to the present invention, in a burn-in method of a semiconductor device in which a plurality of semiconductor devices formed on a lead frame are processed while being mechanically connected to the lead frame, each semiconductor device is individually tested. However, a semiconductor device determined to be defective is provided with a predetermined defect indication on a lead frame in the vicinity thereof, and a plurality of semiconductor devices mechanically connected to the lead frame are individually connected to a plurality of connecting means. A burn-in method for a semiconductor device, characterized in that the semiconductor device is mounted and electrically connected, and a burn-in process is performed by energizing only a connecting device in which a defective display is not detected in a lead frame near each connecting means.

[0013]

According to the present invention, the burn-in device including the connecting means, the detecting means and the processing means is used. The connection means individually mounts each semiconductor device and performs electrical connection required for burn-in processing. In the detection means, in a state where each semiconductor device is mounted on the connection means, is a defect display added to a predetermined position in the vicinity of each connection means of the lead frame, which indicates that the semiconductor device is a defective product? Detect whether or not. The processing means responds to the output from the detecting means, and performs the burn-in processing while energizing only the connecting means mounted with the semiconductor device in which the defective display is not detected.

Further, according to the present invention, first, each semiconductor device is individually tested, and a semiconductor device determined to be defective is
A predetermined defect display is added to the nearby lead frame. Next, a plurality of semiconductor devices mechanically connected to the lead frame are individually attached to a plurality of connecting means to electrically connect them, and a defective display is not detected in the lead frame near each connecting means. Burn-in processing is performed by energizing only the equipment.

Therefore, it is possible to obtain a burn-in processing apparatus and method capable of performing burn-in processing without lowering the mechanical strength of the entire semiconductor device with a lead frame.

[0016]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT FIG. 1 is a flow chart showing a manufacturing process of an IC 62 including a burn-in process according to the present invention. Figure 2
FIG. 4 is a plan view of an IC 70 with a lead frame according to an embodiment of the present invention. In the flowchart of FIG. 1, the process is started at step b1. At step b2, die bonding for fixing the IC chip to the lead frame 61 is performed. In step b3, the lead frame 6
Wire bonding for connecting the lead terminal 63 of No. 1 and the electrode of the IC chip is performed. At step b4, the IC chip on the lead frame 61 is sealed with a package made of resin or ceramic. At step b5, only the lead tip portion 64 and the tie bar 65 are cut and removed from the lead frame 61 so that the lead terminals 63 of the IC 62 are not connected to each other. At this time, I
C62 is supported only by the IC support portion 66 of the lead frame 61.

At step b6, a pre-test for inspecting whether the IC 62 is open or short-circuited between the lead terminals 63 is performed to determine whether or not the IC 62 is defective. In step b7, the IC 62 determined to be a defective product by this pretest has a detection hole 72 formed by machining at a predetermined position in the lead frame 61 near the IC 62 and added. The detection hole 72 is used to identify a defective product. In step b6, the frame in the vicinity of the IC 62 which is determined to be non-defective is not processed and is sent to the process of step b8 as it is.
A pre-test was performed in the step before the burn-in process in step b8, and in step b7, the defective IC 62
Is identified, the damage of the burn-in device due to the defective IC 62 is prevented in advance. At step b8, burn-in processing is performed. This burn-in process causes an electrical and thermal overload on the IC 62 in the pre-process of the final test, causing an initial failure. This is because the defective product generation rate of the IC 62 is particularly high in the initial stage, so that the IC 62 is removed. At step b9, a final test as a product is performed. In step b10, the IC of the lead frame 61
The support portion 66 is cut, and the lead frame 61 is removed from the IC 62.
To remove. In step b11, bending for bending the lead terminal 63 of the IC 62 is performed, and the IC 6
2 can be shipped as a product.

FIG. 3 is a perspective view of an IC 70 with a lead frame according to an embodiment of the present invention. As described above, the plurality of ICs 62 are respectively provided by the IC support portions 66 at four locations.
It is supported. Further, the IC 62 is lead-cut and tie-bar cut in order to perform the pretest and the burn-in process as described above, and the lead terminal 63 is separated from the adjacent lead terminal 63 and lead frame 61. The lead frame 61 has a plurality of positioning holes 71.
Is provided. Further, the detection hole 72 is used to identify the defective IC 62 as described above.

FIG. 4 is a perspective view of the burn-in board 81 according to one embodiment of the present invention. On the burn-in board 81, a plurality of IC sockets 82 and resistors 83 are arranged at equal intervals. The burn-in board 81 is mounted in a burn-in device described later, and burn-in processing is performed. In the IC socket body 84 of the IC socket 82,
A plurality of contact electrodes 85 and electrode lead pins 10
2, the guide block 101, the positioning pin 86 and the escape hole 87 are formed. Also, the IC socket body 8
A lid 90 that can rotate in the direction of reference numeral 88 is attached to one end of 4. The lid 90 has a plurality of lead holding portions 9
1, an escape hole 92 and a detection pin 100 are formed. When the lid 90 is rotated in the direction of reference numeral 88 and closed with the IC socket main body 84, the locking lever 93 formed on the lid 90 and the locking portion 94 formed on the IC socket main body 84 are Engaged. Further, the IC socket body 84, the locking portion 94, the lid 90, and the lead pressing portion 91.
Are integrally molded, and they are all made of the same material having electrical insulation. Furthermore, a plurality of fuses 95 for circuit protection are provided on the burn-in board 81.
Also, a connector terminal 96 for making a line connection with a burn-in device described later is formed.

In order to perform a burn-in process on the burn-in board 81, the IC 70 with a lead frame is moved in the direction indicated by reference numeral 100, and a plurality of positioning holes 71 of the lead frame 61 are formed on the IC socket body 84. The positioning pin 86 is inserted and mounted on the IC socket body 84. At this time, the IC 62 is positioned with respect to the IC socket body 84, and the lead terminals 63 of the IC 62 and the corresponding contact electrodes 85 of the IC socket body 84 are in contact with each other. The package portion below the IC 62 is housed in the escape hole 87.

Next, when the lid 90 is rotated in the direction of reference numeral 88, the locking lever 93 and the locking portion 94 are engaged with each other, and the lid 90 and the IC socket body 84 are closed. At this time,
The plurality of lead pressing portions 91 of the lid 90 press the corresponding contact electrodes 85 of the IC socket body 84. Since the contact electrode 85 of the IC socket body 84 has elasticity, the contact electrode 85 and the lead terminal 63 of the IC 62 come into contact with each other while being pressed from above and below. Therefore, the contact electrode 85 of the IC socket body 84 and the IC
The contact state of 62 with the lead terminal 63 becomes good. As a result, the contact electrode 85 and the lead terminal 63 are
It is electrically connected. When the lead frame 61 has a detection hole 72 for detecting the defective IC 62, the corresponding detection pin 100 of the lid 90 is inserted through the detection hole 72 and abuts on the guide block 101. The guide block 101 is provided on the outer peripheral portion of the contact electrode 85, is provided with an elastic uplifting force from below by a spring, and is guided by the IC socket body 84 to be able to move up and down. However, although the detection pin 100 is also given an elastic force by a spring described later, it is larger than the elastic force given to the guide block 101.
0 pushes down the guide block 101. If the lead frame 61 does not have the detection hole 72,
The detection pin 100 contacts the lead frame 61. I
The package portion on the upper part of C62 is an escape hole 92 of the lid 90.
Is stored in.

FIG. 5 shows the IC socket 82 shown in FIG.
Lead pin 102 and contact electrode 8 in
5 shows the contact state between 5 and the contact rod 110. The IC socket body 84, the contact electrode 85, and the electrode lead pin 102 are largely omitted in order not to obstruct the understanding of the contact state. The contact electrode 85 and the electrode lead pin 102 are electrically connected by a contact rod 110 of a conductive property that is in contact with them. The tip of the contact rod 110 is embedded in the guide block 101. Guide block 1
Since 01 can be moved up and down by being given an elastic lifting force as described above, the contact rod 110 is
And the electrode lead pin 102 is pressed to make the contact state good. Further, when the guide block 101 is lowered by pressing the detection pin 100, the contact rod 110 is also lowered in the direction of the reference numeral 103 in conjunction therewith, so that the electrical connection between the contact electrode 85 and the electrode lead pin 102 is released. .

FIG. 6 shows the IC socket 82 shown in FIG.
A cross-sectional view when the IC 70 with the lead frame is positioned is shown above. FIG. 7 shows the lid 90 in the IC socket 82 shown in FIG. 6 when the detection hole 72 is formed in the lead frame 61.
A cross-sectional view of a state in which the lid 90 and the IC socket body 84 are closed by rotating the lid 90 in the direction of the arrow is shown. Figure 7
, The locking lever 93 and the locking portion 94 are engaged,
That state is retained. See the locking lever 93 for reference numeral 115.
The engaged state can be released by rotating in the direction of. Further, the detection pin 100 is inserted through the detection hole 72 and is in contact with the guide block 101.
At this time, the elastic force of the spring 112 of the detection pin 100 is larger than the elastic force of the spring 111 of the guide block 101.
01 is pressed. Therefore, the contact rod 110
Is lowered in conjunction with the guide block 101, the contact between the contact rod 110, the contact electrode 85 and the electrode lead pin 102 is released. That is, the electrical connection between the contact electrode 85 and the electrode lead pin 102 is released.

FIG. 8 shows the IC socket 82 shown in FIG.
In the case where the detection hole 72 is not formed in the IC 70 with the lead frame, the lid 90 is rotated in the direction of the arrow indicated by the reference numeral 88, and the lid 90 and the IC socket body 8 are
4 is a sectional view showing a state in which 4 and 4 are closed. In this case, since the detection hole 72 is not formed in the lead frame 61, the detection pin 100 abuts the lead frame 61 and is pushed into the inside of the lid 90 while compressing the spring 110 by the elasticity of the spring 110. In addition, the detection pin 10
Since 0 does not contact the guide block 101, the contact rod 110 remains as it is. Therefore, the contact rod 110 is connected to the spring 11 of the guide block 101.
The elastic rising force of 1 makes good contact with the contact electrode 85 and the electrode lead pin 102. Therefore, the contact electrode 85 and the electrode lead pin 102 are electrically connected.

6 to 8, each electrode lead pin 1
The lower end of 02 is electrically connected to the corresponding wiring pattern of the burn-in board 81. Each wiring pattern is electrically connected to the corresponding connector terminal 96 via the resistor 83 and the fuse 95. Therefore, the lead terminal 63 of the IC 62 of the IC 70 with the lead frame and the corresponding connector terminal 96 of the burn-in board 81 are not electrically connected when the IC 62 is defective, and I
If C62 is not defective, it is electrically connected. That is, by detecting the presence or absence of the detection hole 72 in the lead frame 61, it is possible to energize only the good IC 62.

FIG. 9 shows a perspective view of the burn-in device 120 of one embodiment of the present invention. In the burn-in device 120, a plurality of burn-in board racks 121 are arranged at equal intervals. The burn-in board 81 on which the IC 70 with the lead frame is mounted is sequentially mounted on the burn-in board rack 121 of the burn-in device 120 in the direction indicated by reference numeral 122. Back surface 123 of burn-in device 120
In this case, the same number of connectors as the number of burn-in racks 121 are installed to connect to the connector terminals 96 of the burn-in board 81. Further, a potential and a signal for performing burn-in processing are applied to this connector from the burn-in device 120. When the burn-in board 81 is mounted on the burn-in rack 121, the burn-in board 8
The connector terminal 96 of No. 1 and the connector of the burn-in device 120 are electrically connected. Therefore, when the IC 62 mounted on the burn-in board 81 is a non-defective product, a potential and a signal can be applied from the burn-in device 120 to the lead terminal 63 of the IC 62. Further, when the IC 62 mounted on the burn-in board 81 is a defective product, even if a potential and a signal are applied from the burn-in device 120, the electrical connection with the IC 62 is canceled inside the IC socket 82 as described above. , A potential is not applied to the lead terminal 63 of the IC 62.

FIG. 10 is a block diagram showing a schematic electrical configuration of the burn-in device 120 shown in FIG.
In the IC 70 with a lead frame mounted on the burn-in board 81, if the IC 62 is defective, I
The detection hole 72 in the vicinity of C62 is the detection means 130 I
It is detected by the detection pin 100 of the C socket 82.
At this time, in response to the detection means 130, the connection means 131
The contact rod 110 of the IC socket 82 disconnects the electrical connection between the contact electrode 85 and the electrode lead pin 102. Therefore, in this case, the burn-in device 1
When the burn-in process is performed by 20, the potential or signal is not applied from the burn-in device processing unit 132 to the lead terminal 63 of the IC 62. When the IC 62 is a non-defective product, the detection hole 72 is the IC socket 8 serving as the detection means 130 at a predetermined position near the IC 62.
Not detected by the second detection pin 100. At this time,
In response to the detection means 130, the IC that is the connection means 131
The contact rod 110 of the socket 82 electrically connects the contact electrode 85 and the electrode lead pin 102. Therefore, in this case, when the burn-in device 120 performs the burn-in process, the burn-in device processing unit 132
From, a potential and a signal are applied to the lead terminal 63 of the IC 62.

As described above, in this embodiment, the IC
Regardless of whether or not 62 is a non-defective product, the burn-in process is always performed with the IC 62 connected to the lead frame 61, so the mechanical strength of the lead frame 61 does not decrease. Further, since the defective IC 62 is not energized, the burn-in device 120 is not damaged. Further, although a flat package type IC is used in this embodiment, such a package type IC is used.
Of course, the package IC is not limited to C, and other package type ICs may be used. In that case, burn-in processing is performed using an IC socket, a lead frame, a detection hole, etc. which are suitable for the package used.

[0029]

As described above, according to the present invention, each semiconductor device is individually tested, and a semiconductor device determined to be defective is provided with a predetermined defect indication on a nearby lead frame. When the defective display is not detected, it is possible to obtain a burn-in device and a method capable of performing burn-in processing by energizing only the semiconductor device. Therefore, by using this burn-in device and method, the defective semiconductor device is not energized, so that the burn-in device is not damaged by a short circuit or the like. In addition, regardless of whether the semiconductor device is a good product or not, since the burn-in process is always performed with the semiconductor device connected to the lead frame, the mechanical strength of the lead frame does not decrease. As a result, work errors and correction work due to deformation of the lead frame are eliminated, the work of the burn-in process can be efficiently performed, and the cost of the burn-in process can be reduced.

[Brief description of drawings]

FIG. 1 is a flowchart showing manufacturing steps of an IC 62 including burn-in processing according to the present invention.

FIG. 2 is an IC 7 with a lead frame according to an embodiment of the present invention.
It is a top view of 0.

FIG. 3 is an IC 7 with a lead frame according to an embodiment of the present invention.
It is a perspective view of 0.

FIG. 4 is a perspective view of a burn-in board 81 according to an embodiment of the present invention.

5 shows a contact state between an electrode lead pin 102, a contact electrode 85 and a contact rod 110 in the IC socket 82 shown in FIG.

6 is a schematic view of the IC socket 82 shown in FIG.
A sectional view when the IC 70 with a lead frame is positioned is shown.

7 is a schematic diagram of an IC socket 82 shown in FIG.
A sectional view of a state in which the lid 90 and the IC socket body 84 are closed when the detection hole is formed in the IC 70 with a lead frame is shown.

FIG. 8 is a diagram showing the IC socket 82 shown in FIG.
A cross-sectional view of a state in which the lid 90 and the IC socket body 84 are closed when the detection hole 72 is not formed in the IC 70 with the lead frame is shown.

FIG. 9 shows a perspective view of a burn-in device 120 of one embodiment of the present invention.

10 is a block diagram showing a schematic electrical configuration of the burn-in device 120 shown in FIG.

FIG. 11 is a flowchart showing a manufacturing process of an IC 2 including a conventional burn-in device 50 and a method.

FIG. 12 is a plan view of an IC 10 with a lead frame used in a conventional burn-in device 50.

FIG. 13 is a perspective view of an IC 10 with a lead frame used in a conventional burn-in device 50.

FIG. 14 is a perspective view of an IC 10 with a frame used in a conventional burn-in process and having a large number of defective ICs 12;

FIG. 15 is a perspective view of a conventional burn-in board 21.

FIG. 16 is a sectional view showing a state in which the framed IC 10 is positioned on the IC socket 22 of the conventional burn-in board 21.

FIG. 17 is a cross-sectional view of the IC socket 22 shown in FIG. 16 with the lid 30 and the IC socket body 24 closed.

FIG. 18 shows a perspective view of a conventional burn-in device 50.

[Explanation of symbols]

 61 Lead Frame 62 IC 63, 96 Lead Terminal 64 Lead Tip 65 Tie Bar 66 IC Support 70 IC with Lead Frame 71 Positioning Hole 72 Detection Hole 81 Burn-in Board 82 IC Socket 83 Resistor 84 IC Socket Body 85 Contact Electrode 86 Positioning Pin 87 , 92 Clearance hole 90 Lid 91 Lead pressing part 101 Guide block 102 Electrode lead pin 110 Contact rod 111, 112 Spring 120 Burn-in device 130 Detecting means 131 Connecting means 132 Burn-in device processing part

Claims (2)

[Claims] 1. A burn-in apparatus for a semiconductor device, wherein a plurality of semiconductor devices each formed on a lead frame are processed while being mechanically connected to the lead frame. The semiconductor device is defective at a predetermined position in the vicinity of each connection means of the lead frame in a state where the plurality of connection means for performing electrical connection necessary for processing and each semiconductor device are mounted on the connection means. A burn-in process is performed while energizing only the connecting means equipped with the semiconductor device in which the defect display indicating that the defect display is added and the output from the detecting device and the defect display are not detected in response to the output from the detecting means. A burn-in device for a semiconductor device, comprising: a processing means. 2. A burn-in method for a semiconductor device, wherein a plurality of semiconductor devices each formed on a lead frame are processed while being mechanically connected to the lead frame. For a semiconductor device that is determined to be non-defective, a predetermined defect indication is added to the nearby lead frame, and a plurality of semiconductor devices mechanically connected to the lead frame are individually attached to a plurality of connecting means. A burn-in method for a semiconductor device, comprising electrically connecting and conducting a burn-in process by energizing only a connecting device in which a defective display is not detected on a lead frame near each connecting means.