JPH06172998A - Method for forming thin film and device therefor - Google Patents

Abstract

PURPOSE:To uniformize the thickness distribution of the thin films of vapor- deposition materials at the time of producing the respective thin films of these plural different materials on a formed film of a substrate. CONSTITUTION:A film thickness correcting plate 3 in a shape to uniformize the distribution when ZrO2 is vapor-deposited at 1X10<-4>Torr is prepared. The plate 3 is fixed to the wall surface of the vessel 1, substrates are held at the regions on the lower surface of a substrate holder 2 shifted from a center hole 2A and radially arranged, the vessel is evacuated to f 1X10<-6>Torr from an outlet 6, then gaseous oxygen is introduced into the vesseel 1 from an inlet 7 the holder 2 is rotated and SiO2 is vapor-deposited in an oxygen atmosphere at 5X10<-5>Torr.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method and apparatus for depositing a plurality of different materials on a film-forming surface of a substrate.

[0002]

2. Description of the Related Art Conventionally, in a vapor deposition apparatus for a large area substrate, since the size of the vacuum chamber is large, the distance between the evaporation source and the substrate is long, and the vapor deposition is performed at the same degree of vacuum as a small vacuum chamber. The probability of collision between the vaporized molecules and the residual gas increases, scattering occurs, and the film thickness distribution becomes non-uniform. In particular, when a plurality of different vapor deposition materials are vapor-deposited, if each vapor deposition material is vapor-deposited at the same degree of vacuum, the scattering state varies depending on the type of vapor deposition material, and thus the film thickness distribution will differ for each vapor deposition material. There was a problem.

Further, even when vapor deposition is carried out in a small vacuum tank for a small area substrate, when vapor deposition is carried out at a low degree of vacuum, the same scattering as described above occurs and the film thickness distribution becomes uneven. there were.

[0004]

DISCLOSURE OF THE INVENTION The present invention has been made in view of the problems of the above-mentioned prior art, in which a plurality of different kinds of vapor deposition materials are vapor-deposited on the film-forming surface of a substrate. It is an object of the present invention to realize a thin film manufacturing method and apparatus capable of making the film thickness distribution of each thin film of each vapor deposition material uniform in the case of manufacturing each thin film.

Further, to realize a thin film manufacturing method and apparatus capable of making the film thickness distribution uniform when a multi-layered thin film is manufactured by sequentially depositing a plurality of different kinds of evaporation materials on the film formation surface of a substrate. Is the second purpose.

[0006]

In order to achieve the above object, the thin film manufacturing method of the present invention manufactures a thin film of each vapor deposition material by vapor depositing a plurality of different vapor deposition materials on the deposition surface of a substrate. In the method, a film thickness distribution correction plate having a shape set so that the film thickness distribution is uniform at a specific degree of vacuum is formed between the evaporation source and the substrate for one of the different kinds of evaporation materials. It is characterized in that it is arranged and vapor-deposited at a specific vacuum degree for each vapor-deposition material.

Further, in a method for producing a multilayer thin film by sequentially depositing a plurality of different kinds of vapor deposition materials on the film formation surface of a substrate, the shape is set so that the film thickness distribution is uniform for each vapor deposition material. It is also possible to prepare a peculiar film thickness distribution correction plate in advance, dispose the peculiar film thickness distribution correction plate for each vapor deposition material between the evaporation source and the substrate, and perform sequential vapor deposition at the same vacuum degree. it can.

Further, the thin film manufacturing apparatus of the present invention is a vapor deposition apparatus for sequentially vaporizing a plurality of different vapor deposition materials, which comprises a vacuum chamber, a substrate holder arranged in the vacuum chamber, and an evaporation source. A film thickness distribution correction plate for arranging one of the peculiar film thickness distribution correction plates whose shape is set so that the film thickness distribution is uniform for each vapor deposition material between the source and the substrate holder. It is characterized in that selection means is provided.

[0009]

[Function] A film thickness distribution correction plate having a shape set so that the film thickness distribution is uniform at a vacuum degree peculiar to one of different kinds of vapor deposition materials, and a vacuum degree peculiar to each vapor deposition material. Due to the interaction, the influence of scattering is eliminated for each vapor deposition material, and the film thickness distribution becomes uniform.

Further, in the invention according to claim 2, a film thickness distribution correcting plate having a unique shape set for each vapor deposition material is arranged between the evaporation source and the substrate holder, and the plates are sequentially arranged at the same degree of vacuum. By vapor deposition, the influence of scattering is eliminated for each vapor deposition material, and the film thickness distribution becomes uniform.

[0011]

Embodiments of the present invention will be described with reference to the drawings.

First, a first embodiment of the present invention will be described.

FIG. 1 is an explanatory view of a first vacuum vapor deposition apparatus used for carrying out the first embodiment.

As shown in FIG. 1, the first vacuum vapor deposition apparatus includes a vacuum chamber 1 having an exhaust port 6 connected to a vacuum generation source (not shown) and an air supply port 7 connected to a gas supply source (not shown). A dome-shaped substrate holder 2 which is rotated by a rotation driving means (not shown) arranged above the vacuum chamber 1,
An optical film thickness monitor 5 for film thickness control arranged so as to be located in the central hole 2A of the substrate holder 2, an electron beam source 4 as an evaporation source arranged under the vacuum chamber 1, and a substrate. A film thickness distribution correction plate 3 is provided between the holder 2 and the electron beam source 4.

Incidentally, the substrate holder 2 has a diameter of 100.
0 mm, distance 1 between electron beam source 4 and substrate holder 2
500 mm, the film thickness distribution correction plate 3 is 1 from the bottom of the vacuum chamber 1.
It is fixed at a site with a height of 000 mm. A film thickness distribution correction plate 3 and a substrate holder 2 fixed to the wall surface of the vacuum chamber 1,
As for the arrangement relationship of the optical film thickness monitor 5, as shown in FIG. 2, the optical film thickness monitor 5 arranged in the central hole 2A of the substrate holder 2 is not affected by the film thickness distribution correction plate 3. As described above, the film thickness distribution correction plate 3 is arranged so as to be effective within the radial direction of 50 to 600 mm from the center of the substrate holder 2. The planar shape of the film thickness distribution correction plate 3 is 50 to 500 in the radial direction from the center of the substrate holder 2.
Determined by the evaporation distribution of the evaporation material, the electron beam source 4, and the geometrical arrangement between the substrates held on the lower surface of the substrate holder 2 so that the thickness distribution of the evaporated thin film becomes uniform in the range of mm. However, in this embodiment, the vacuum degree of ZrO _{2 is set} to 1 ×.
The film thickness was set to be uniform when vapor deposition was performed at 10 ⁻⁴ torr.

The film thickness distribution correction plate 3 having the shape set as described above is fixed to the wall surface of the vacuum chamber 1, and a substrate having a diameter of 30 mm is held on the lower surface of the substrate holder 2 at a position displaced from the central hole 2A, and the radial direction is maintained. After that, oxygen gas is introduced from the air supply port 7 into the vacuum chamber 1 having a vacuum degree of 1 × 10 ⁻⁶ torr or less by vacuum suction from the exhaust port 6, and the substrate holder 2 is placed at 12
While rotating at rpm, SiO ₂ is vapor-deposited on the film formation surface of the substrate in an oxygen gas atmosphere with a vacuum degree of 5 × 10 ⁻⁵ torr.
A sample of the first example was manufactured.

1. The sample of Comparative Example 1 manufactured in the same manner as in Example 1 except that an oxygen gas atmosphere of 1.5 × 10 ⁻⁴ torr was used as a Comparative Example for the sample of this Example.
No. 1 except that an oxygen gas atmosphere of 5 × 10 ^-4 torr was used
FIG. 3 shows the result of measuring the film thickness distribution of each of the samples of Comparative Example 2 manufactured in the same manner as in the example and comparing it with the designed film thickness distribution.

As is apparent from FIG. 3, the substrate holder 2
The film thickness distribution at a position of 100 to 500 mm in the radial direction from the center of the sample is within ± 1% of the design film thickness distribution in the sample of the first embodiment, whereas each sample of Comparative Examples 1 and 2 Is much different from the designed film thickness distribution from the central part of the substrate holder 2 to the outer peripheral part.

Similarly, ZrO ₂ , SiO ₂ , Al ₂
The thin film of each of O ₃ and MgF ₂ was manufactured, the film thickness distribution at a position of 50 to 500 mm in the radial direction of the substrate holder 2 was measured, and the inherent vacuum degree within ± 2% was obtained.
Shown in.

[0020]

[Table 1] As a comparative example, ZrO ₂ , SiO ₂ , and A were prepared in the same manner as above except that the oxygen gas atmosphere was 1.5 × 10 ⁻⁴ torr.
FIG. 4 shows the results of measuring the film thickness distribution of each thin film of l ₂ O ₃ produced. As is clear from FIG. 4, in the case of this comparative example, the film thickness distribution varies depending on the type of vapor deposition material, even though vapor deposition was performed in an oxygen gas atmosphere with the same degree of vacuum.

In the present embodiment, ZrO ₂ is selected to set the shape of the film thickness distribution correction plate for the following reason.

It is generally known that a film made of an oxide is subjected to reactive vapor deposition in an oxygen gas atmosphere in order to reduce its light absorption amount. Among the above vapor deposition materials, ZrO ₂ is used for reducing the light absorption amount. This is because the amount of oxygen required is highest.

Next, an experiment was conducted on a vapor deposition apparatus for a large substrate, and the results will be described.

FIG. 5 is an explanatory view of the second vacuum vapor deposition apparatus used in this experiment.

As shown in FIG. 5, the second vacuum vapor deposition apparatus includes a vacuum chamber 11 having an exhaust port 16 connected to a vacuum generation source (not shown) and an air supply port 17 connected to a gas supply source (not shown). , A substrate holder 12 rotated by a rotation drive unit 12A arranged in the upper part of the vacuum chamber 11, and an electron beam source 1 as an evaporation source arranged in the lower part of the vacuum chamber 11.
4, a film thickness distribution correction plate 13 rotated by a rotation driving unit 13A, and an optical film thickness monitor 15 arranged near the substrate holder 12. By the way, the substrate holder 12 can hold the substrate W ₂ having a maximum diameter of 1300 mm, the distance between the electron beam source 14 and the substrate W ₂ is 1700 mm, and the electron beam source 14 and the film thickness distribution correction plate 13
The distance between them is 500 mm.

The thickness distribution correction plate 13 has a planar shape as shown in FIG. 6, and the correction plate element 1 having the same shape.
3a is provided so as to project radially from the central portion, and the central portion is fixed to the rotation driving portion 13A so as to rotate.

With the second vacuum vapor deposition apparatus, a diameter of 13
The 00 mm substrate W ₂ is held on the lower surface of the substrate holder 12, and the substrate holder 12 is moved to 10 r by the rotation driving unit 12A.
A thin film was manufactured for each vapor deposition material shown in Table 2 while rotating the film thickness distribution correction plate 13 at 13 rpm by the rotation driving unit 13A while rotating the film at each pm.

5 × 10 ^-7 t after vacuum suction from the exhaust port 16
Into the vacuum chamber 11 with a vacuum degree of orr or less, the air supply port 17
In the case of oxide, oxygen gas is introduced, and in the case of fluoride, argon gas which is an inert gas is introduced, vapor pressure is changed for each vapor deposition material, and a thin film is produced for each sample. Obtained.

The film thickness distribution of each sample was measured, and the degree of vacuum when the film thickness distribution is within ± 2% is shown in Table 2.

[0030]

[Table 2] Next, a second embodiment of the present invention will be described.

FIG. 7 shows a third embodiment used for carrying out the second embodiment.
FIG. 3 is an explanatory view of the vacuum vapor deposition device of FIG.

As shown in the seventh example, the third vacuum vapor deposition apparatus includes a vacuum chamber 21 having an exhaust port 26 connected to a vacuum generation source (not shown) and an air supply port 27 connected to a gas supply source (not shown). , A substrate holder 22 disposed above the vacuum chamber 21, and an optical film thickness monitor 2 for controlling the film thickness, which is disposed so as to be located in the central hole 22A of the substrate holder 22.
5, an electron beam source 24, which is an evaporation source disposed below the vacuum chamber 21, a substrate holder 22, and an electron beam source 24.
And a film thickness distribution correction plate selecting means 23 provided with four film thickness distribution correction plates 23A to 23D having different shapes, which are rotatably supported via a rotation shaft 28, and a film thickness distribution correction plate selecting means. And an auxiliary tank 21A for holding the vacuum state of the vacuum vessel 21.

Here, the four film thickness distribution correction plates 23A-2
In 3D, the shape was set so that the film thickness distribution was uniform for each of the four kinds of evaporation materials. In this third vacuum vapor deposition apparatus, each vapor deposition is performed by the film thickness distribution correction plate selecting means 23 provided with four film thickness distribution correction plates 23A to 23D having different shapes rotatably supported via the rotary shaft 28. One of the peculiar film thickness distribution correction plates whose shape is set for each material is selectively arranged.

The number of the film thickness distribution correction plates is not limited to four, and can be appropriately increased or decreased according to the number of kinds of vapor deposition materials. Further, the present invention is not limited to this embodiment, and a support means is provided on the side wall of the vacuum chamber to which each film thickness distribution correction plate can be removably attached, and the film thickness distribution correction plate is exchanged and supported. You can also do it.

By means of the third vacuum vapor deposition apparatus shown in FIG. 7, substrates having a diameter of 30 mm are arranged and held on the lower surface of the substrate holder 22, and vacuum suction is carried out from the exhaust port 26 to 1 × 10 ⁻⁶ to.
Oxygen gas was introduced into the vacuum chamber 21 having a vacuum degree of rr from the air supply port 27, and four kinds of TiO ₂ , ZrO ₂ , Al ₂ O ₃ and SiO ₂ were added in an oxygen gas atmosphere of 1 × 10 ⁻⁴ torr. The vapor deposition materials were sequentially vapor deposited. At this time, 4
The peculiar film thickness distribution correction plate was selectively arranged for each kind of vapor deposition material, and vapor deposition was performed respectively.

The film structure of the high reflection film has a center wavelength of 1064
Substrate / (SiO ₂
/ TiO ₂ ) ⁵ (SiO ₂ / ZrO ₂ ) ³ (SiO ₂ /
Al ₂ O ₃ ) ³ / air.

When the film thickness distribution of the high reflection film of this embodiment was measured, it was 1000 mm in the radial direction from the center of the substrate holder.
It was within ± 1% at the inside position, which was almost the same as the film thickness distribution of the thin film for each material.

[0038]

Since the present invention is configured as described above, it has the following effects.

The film thickness distribution of each thin film produced by vapor deposition of a plurality of different kinds of vapor deposition materials on the film formation surface of the substrate becomes uniform.

According to the second aspect of the invention, it is possible to easily manufacture a multi-layered thin film made of a plurality of different kinds of vapor deposition materials having a uniform film thickness distribution.

[Brief description of drawings]

FIG. 1 is an explanatory diagram of a first vacuum vapor deposition apparatus used for carrying out the present invention.

FIG. 2 is an explanatory diagram showing a positional relationship between a film thickness distribution correction plate, a substrate holder and the like in the first vacuum vapor deposition apparatus shown in FIG.

FIG. 3 is a graph showing a radial film thickness distribution of each of the sample of the first example and the sample of the comparative example.

FIG. 4 is a graph showing a radial film thickness distribution of each vapor deposition material when different vapor deposition materials are vapor-deposited using the same degree of vacuum and the same film thickness distribution correction plate.

FIG. 5 is an explanatory diagram of a second vacuum vapor deposition device used for carrying out the present invention.

6 is an explanatory diagram showing a positional relationship between a film thickness distribution correction plate, a substrate holder and the like in the second vacuum vapor deposition apparatus shown in FIG.

FIG. 7 is an explanatory diagram of a third vacuum vapor deposition device used for carrying out the present invention.

8 is an explanatory diagram showing a positional relationship between a film thickness distribution correction plate and a substrate holder in the third vacuum vapor deposition device shown in FIG.

[Explanation of symbols]

 1,11,21 Vacuum tank 2,12,22 Substrate holder 3,13,23A-23D Film thickness distribution correction plate 4,14,24 Electron beam source 5,15,25 Optical film thickness monitor 6,16,26 Exhaust Mouth 7, 17, 27 Air supply port 23 Film thickness distribution correction plate selecting means

 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Hidehiko Fujimura 3-30-2 Shimomaruko, Ota-ku, Tokyo Canon Inc. (72) Inventor Koji Sawamura 3-30-2 Shimomaruko, Ota-ku, Tokyo Canon Within the corporation

Claims (5)

[Claims] 1. A method for producing a thin film of each vapor deposition material by vapor depositing a plurality of heterogeneous vapor deposition materials respectively on a film formation surface of a substrate, wherein one vapor deposition material of the heterogeneous vapor deposition materials is A film thickness distribution correction plate, whose shape is set so that the film thickness distribution is uniform at the degree of vacuum, is disposed between the evaporation source and the substrate, and vapor deposition is performed at a unique degree of vacuum for each vapor deposition material. Characteristic thin film manufacturing method. 2. A method for producing a multi-layered thin film by sequentially depositing a plurality of different vapor deposition materials on a film formation surface of a substrate, wherein each vapor deposition material is set to have a uniform film thickness distribution. Prepare a peculiar film thickness distribution correction plate, arrange the peculiar film thickness distribution correction plate for each vapor deposition material between the evaporation source and the substrate, and perform sequential vapor deposition at the same vacuum degree. Characteristic thin film manufacturing method. 3. The method for producing a thin film according to claim 1, wherein when the vapor deposition material is an oxide, the vapor deposition is performed in an oxygen gas atmosphere. 4. The vapor deposition material is a fluoride, the vapor deposition is carried out in an inert gas atmosphere.
Alternatively, the thin film manufacturing method described in 2. 5. A vapor deposition apparatus for sequentially vaporizing a plurality of different vapor deposition materials, which comprises a vacuum chamber, a substrate holder and an evaporation source arranged in the vacuum chamber, and between the evaporation source and the substrate holder. , A film thickness distribution correction plate selecting means for arranging one of the peculiar film thickness distribution correction plates whose shape is set to be uniform for each vapor deposition material is provided. Characteristic thin film manufacturing equipment.