JPH06158305A - Inline sputtering device - Google Patents

Abstract

PURPOSE:To eliminate contamination between targets and to prevent contamination of insides of chambers without providing individually independent chambers in an inline sputtering device having plural targets. CONSTITUTION:The inline sputtering device is constituted of a substrate 2 on which a thin film is formed many kinds of targets 5, 6 capable of independently using, shutters 10 capable of moving between targets 5, 6 and the substrate 2 and diffusion preventing plates 15, 16 provided between the target 5 and the target 6. By covering the target 10 with the shutter 10 and the diffusion preventing plates 15, 16, contamination caused by sputtering is prevented.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an in-line sputtering device.

[0002]

2. Description of the Related Art Conventionally, a sputtering apparatus has been known as an apparatus for forming a thin film on a substrate. In this sputtering apparatus, for example, a voltage is applied between a substrate and a target in a film formation chamber into which a predetermined gas such as argon gas has been introduced to cause glow discharge, and gas ions such as argon ions generated there are used as a cathode target. And the target particles sputtered and emitted by the collision are deposited on the surface of the substrate, which is an anode, to form a thin film.

Further, generally, there is an in-line system as a processing system in which processing devices are arranged in a line and continuous processing is performed. In an in-line sputtering apparatus in which this in-line method is applied to a sputtering apparatus, a plurality of targets are prepared and installed according to the type of thin film formed on the substrate, and the required target is selected from the plurality of targets. By selectively performing the sputtering process, thin films of different materials can be formed by one in-line sputtering device.

Regarding the conventional in-line sputtering apparatus, the configuration diagram of the first conventional example of the in-line sputtering apparatus of FIG. 6, the operation diagram of the first conventional example of the in-line sputtering apparatus of FIG. 7, and the in-line of FIG. This will be described with reference to the configuration diagram of the second conventional example of the sputtering apparatus. 6 to 8, reference numerals 1, 20 and 21 are chambers, 2 is a substrate, 5 and 6 are targets, 7 is a central heater or a central deposition preventing plate, 8 is a partition portion, and 9 is a gate valve.

In the first conventional example of the in-line sputtering apparatus shown in FIG. 6, the targets 5 and 6 and the central heater 7 are arranged to face each other in the chamber 1 for sputtering. Note that, although FIG. 6 shows an example in which a single row of substrates 2 is introduced into the chamber 1, in the case of introducing a plurality of rows of substrates 2 into the chamber 1, instead of the central heater 7, a central deposition is performed. Substrate 2 by providing a plate
It is possible to prevent the contamination of the substrates due to the sputtering.

In the conventional example of FIG. 6, two targets 5 and 6 are arranged as a plurality of targets. The introduction or the introduction of the substrate 2 into the chamber 9 is performed through a gate valve 9 provided in the chamber 1 and keeping the inside in a sealed state. In the chamber 1, the substrate 2 is transferred to a target 5 or a target 6 and a central heater 7 by a transfer device (not shown).
And is sputtered at this position to form a thin film. The substrate 2 on which this thin film has been formed is led out through the gate valve 9 on the lead-out side and is transferred to a chamber for performing the next process.

Next, the operation of the first conventional example of the in-line sputtering apparatus shown in FIG. 6 will be described with reference to FIG. The operation of the first conventional example of the in-line sputtering apparatus is composed of two steps, a pre-sputtering step and a sputtering step. FIG. 7A shows the pre-sputtering step, and FIG. The process is shown.

In this operation example, of the two targets 5 and 6, the target 5 is used for sputtering. First, Fig. 7
The pre-sputtering step (a) will be described. The pre-sputtering step is performed to clean the surface of the target used for sputtering.

In this pre-sputtering process, a voltage is applied between the substrate and the target to cause glow discharge, and gas ions such as argon ions generated there are made to collide with the target, which is the cathode, as in the normal sputtering process. is there. Impurities on the target surface can be sputtered and released by this collision to clean the target surface.

This pre-sputtering step is performed on the target (the target 5 in this case) for sputtering before introducing the substrate 2 into the chamber 1. At this time, the pre-sputtering process is not performed on the target on which sputtering is not performed (target 6 in this case). After the pre-sputtering step, the sputtering step is performed next. The sputtering process will be described with reference to FIG.

The substrate 2 is introduced into the chamber 1 through the gate valve 9, and sputtering is performed using the target 5 cleaned by the pre-sputtering process. At this time, sputtering with another target 6 is not performed. Next, a second conventional example of the in-line sputtering apparatus will be described with reference to FIG.

In the second conventional example of the in-line sputtering apparatus, the chamber 1 for sputtering has a structure in which a partition 8 divides the chamber into two chambers 20 and 21. The partition section 8 can be composed of, for example, a gate valve. As in the first conventional example of the in-line sputtering apparatus, the targets 5 and 6 and the central heater 7 are arranged to face each other in the chamber 20 and the chamber 21 which are divided into two by the partition section 8.

Although FIG. 8 shows an example in which a single row of substrates 2 is introduced into the chamber 1, when a plurality of rows of substrates 2 are introduced into the chamber 1, the central heater 7 is used.
Instead of the above, a central adhesion-preventing plate that partitions the substrates 2 and prevents contamination of the substrates due to sputtering can be provided. Next, the operation of the second conventional example of the in-line sputtering apparatus having the above structure will be described.

Also in the operation of the second conventional example of the in-line sputtering apparatus, the sputtering process is composed of two steps, that is, a pre-sputtering step and a sputtering step, and each step is separated into a chamber 20 and a chamber 21. It is done in each. Hereinafter, the case where the sputtering process is performed in the chamber 20 will be described.

In the chamber 20, the pre-sputtering step is performed on the target (the target 5 in this case) for sputtering before introducing the substrate 2 into the chamber 20. The target 5 is separated from the adjacent chamber 21 by the partition 8. After the pre-sputtering step, the sputtering step is performed next. In the sputtering process, the substrate 2 is transferred to a position between the target 5 and the central heater 7 in the chamber 20 by a transfer device (not shown), and then the target 5 cleaned in the pre-sputtering process is moved to this position. A thin film is formed by performing sputtering.

The substrate 2 after the sputtering process is
Partition part 8, chamber 21 and gate valve 9 on the outlet side
Through the chamber 1 via. The drawn-out substrate 2 is transferred to a chamber for performing the next process.

[0017]

However, the above-mentioned conventional in-line sputtering apparatus has the following problems. (1) There is a problem that the treatment of one target contaminates the other target.

The problem (1) will be described below. For example, in FIGS. 7A and 7B, when the target 5 is pre-sputtered or sputtered, impurities or target particles emitted from the surface of the target 5 may adhere to the adjacent target 6. . The particles attached to the target 6 contaminate the target 6, and during the sputtering process by the target 6, the substrate 2 itself may also be contaminated and a good film formation may not be performed.

As a solution to this problem, the second
In this case, the targets are in respective divided chambers, and there is no problem of contamination between the targets, but there is a problem described in (2) below. (2) Since an independent chamber is required, the size of the in-line sputtering apparatus becomes large and the manufacturing cost of the apparatus also increases.

Further, as problems of both the first conventional example and the second conventional example of the in-line sputtering apparatus, (3) in the pre-sputtering step, the inside of the chamber such as the central heater or the central deposition preventive plate is There is a problem of being contaminated. The problem (3) will be described below. For example, in FIGS. 7A and 8, when the target 5 is pre-sputtered, the particles of impurities emitted from the target 5 adhere to the central heater or the central deposition prevention plate 7 or the inner surface of the chamber 1. There is. Particles attached to the central heater or the central deposition-inhibiting plate 7 or the inner surface of the chamber 1 cause contamination,
It is necessary to clean the central heater or central deposition-inhibiting plate 7 and the interior of the chamber 1.

The cleaning of the central heater or the central deposition-inhibiting plate 7 and the chamber 1 is time-consuming and prolongs the stop period of the in-line sputtering apparatus, which is a factor of lowering the operating rate of the apparatus. Therefore, the present invention solves the problems of the conventional in-line sputtering apparatus, in an in-line sputtering apparatus having a plurality of targets, eliminates contamination between targets without providing independent chambers, and The purpose is to prevent pollution.

[0022]

In order to overcome the above problems, the present invention provides a substrate on which a thin film is formed, a plurality of targets that can be used independently, and a target in an in-line sputtering apparatus. The shutter comprises a shutter movable between the substrate and a diffusion prevention plate installed between the targets, and the shutter and the diffusion prevention plate cover the target to prevent contamination due to sputtering.

[0023]

According to the present invention, during pre-sputtering, the shutter is moved to the target on the pre-sputtering side, and the target is covered by this shutter and the diffusion prevention plate, so that the sputtered particles can be formed on the inner surface of the chamber such as the central heater. Prevents adhesion to other targets.

During sputtering, the shutter is moved to the target on the non-sputtering side,
By covering the target with this shutter and the diffusion prevention plate, it is possible to prevent the sputtered particles from adhering to other targets or inside the chamber.

[0025]

Embodiments of the present invention will be described in detail below with reference to the drawings. FIG. 1 is a block diagram of the in-line sputtering apparatus of the present invention, and FIG. 2 is a block diagram of a shutter of the in-line sputtering apparatus of the present invention. Figure 1
In FIG. 2, 1 is a chamber, 2 is a substrate, 3 is a substrate cart, 4 is a substrate rail, 5 and 6 are targets, 7 is a central heater or a central protective plate, 10 and 10 ′ are shutters,
Reference numeral 11 is a shutter mechanism portion, 12 is a pinion, 13 is a rack, 14 is a cylinder, and 15 and 16 are diffusion prevention plates.

In FIG. 1, the in-line sputtering apparatus of the present invention comprises a substrate 2 and a portion for transporting the substrate 2, a portion for heating the substrate 2, a portion for subjecting the substrate 2 to a sputtering treatment, and a portion for preventing contamination. And these parts are installed in the chamber 1. Less than,
The components of the in-line sputtering apparatus of the present invention will be sequentially described with reference to FIGS. 1 and 2.

Regarding the substrate 2 and a portion for transporting the substrate 2, the substrate 2 to be subjected to the film forming process is introduced into the chamber 1 by a gate valve (not shown) of the chamber 1 installed in the substrate cart 3. Done through. Then, in the chamber 1, the substrate cart 3 is moved along the substrate rail 4 so that the substrate 2 is transported in the chamber 1.

Further, the substrate 2 is guided out of the chamber 1 while it is still mounted on the substrate cart 3.
Is performed via a gate valve (not shown). Regarding the portion for heating the substrate 2; The heating of the substrate 2 for performing the sputtering process is performed by the central heater 7 installed in the chamber 1. In FIG. 1, the central deposition-inhibitory plate is provided to separate adjacent substrates 2 from each other to prevent particles from adhering to each other by a sputtering process when a plurality of rows of substrates 2 are introduced into the chamber 1. It is what is done.

Regarding the portion on which the substrate 2 is subjected to the sputtering process: Two targets 5 and 6 are provided in the chamber 1 along the installation direction of the substrate rail 4, and the targets are used to pre-press the substrate 2. A sputtering process including a sputtering process and a sputtering process is performed. The two targets are provided so that the sputtering process with different targets can be performed in the common in-line sputtering apparatus, and the number of targets is not limited to two and can be any number.

The substrate 2 is conveyed to a position facing the target 5 or the target 6 and stopped, and the sputtering process of the pre-sputtering process and the sputtering process is performed at that position. Concerning a portion for preventing contamination; the in-line sputtering apparatus of the present invention is provided with a mechanism for preventing contamination that occurs in the sputtering process in the pre-sputtering step and the sputtering step.

The mechanism for preventing this contamination is the shutter 10
And the shutter mechanism section 11 and the diffusion prevention plates 15 and 16. First, the shutter 10 and the shutter mechanism unit 11 will be described. The shutter 10 is driven by the shutter mechanism section 11. The shutter mechanism section 11 is driven by the cylinder 14 via the pinion 12 and the rack 13. The shutter 10 is movable in the direction of the target 5 and the target 6 in FIG.
When it moves to the side, it covers the target 5, and when it moves to the side of the target 6, it covers the target 6.

In FIGS. 1 and 2, the shutter 10 is at a position to cover the target 5 and shuts off the space between the target 5 and the substrate 2. Also, the shutter 1 indicated by a broken line
0'is located at a position covering the target 6 and blocks the target 6 from the inner surface of the chamber 1. The shutter 10 can block particles emitted from the targets 5 and 6 to prevent the particles from scattering to other parts and prevent contamination. The operation and effect of the shutter 10 will be described in the subsequent operation of the shutter.

The movement of the shutter 10 between the target 5 and the target 6 is carried out by a driving portion including a shutter mechanism section 11, a pinion 12, a rack 13 and a cylinder 14. This drive portion will be described with reference to FIGS. 1 and 2. In FIG. 2, a drive portion including a shutter mechanism section 11, a pinion 12, a rack 13, and a cylinder 14 is arranged between the target 5 and the target 6,
The shutter 10 is attached to the tip of the shutter mechanism 11. This driving portion moves the shutter 10 left and right to selectively cover either the target 5 or the target 6. Figure 2
In, the shaded portion indicates the target 5 and the target 6, and the target 5 is covered by the shutter 10, while the target 6 is covered by the shutter 10 ′ (shown by the chain line). In addition, in FIG. 2, the rectangle of the two-dot chain line indicates the position of the shutter 10 between the target 5 and the target.

The cylinder 14 is installed outside the chamber 1, and the shutter mechanism section 11, the pinion 12 and the rack 13 are installed inside the chamber 1. When the cylinder 14 is driven outside the chamber 1, the rack 13 in the chamber 1 moves linearly by the cylinder 14. The pinion 12 and the rack 13 constitute a rack and pinion mechanism, and the linear motion of the rack 13 is converted into a rotary motion by the pinion 12. Further, the rotational movement of the pinion 12 drives the shutter mechanism section 11 to move the shutter 10. The chamber 1 of the cylinder 14
An airtight member such as an O-ring is provided in the mounting portion and the sliding portion to secure the airtightness in the chamber 1.

Therefore, the shutter 10 is moved by operating the cylinder 14 installed outside the chamber 1. Other transmission means may be used instead of the shutter mechanism section 11, the pinion 12 and the rack 13. Next, the diffusion prevention plate 15 will be described.

In FIG. 1, diffusion preventive plates 15 and 16 are provided between the drive portion of the target 5 and the shutter 10 and between the drive portion of the target 6 and the shutter 10 (at the position 10 'in the figure). Is installed. Diffusion prevention plate 15
Is formed so as to cover the target 5 together with the shutter 10. Then, the shutter 10 (at the position indicated by 10 'in the figure) and the diffusion prevention plate 15
When the target 5 is covered by
Particles emitted from the film adhere to the shutter 10 and the diffusion prevention plate 15. Thereby, the substrate 2, the central heater 7, or the other target 6 can be prevented from being contaminated by the target 5.

The same applies to the diffusion prevention plate 16, which is formed so as to cover the target 6 together with the shutter 10. Then, when the target 6 is covered with the shutter 10 and the diffusion prevention plate 16, the particles emitted from the target 6 adhere to the shutter 10 and the diffusion prevention plate 15. As a result, the target 6 for the substrate 2, the central heater 7 or the other target 5 can be obtained.
It is possible to prevent contamination due to.

The diffusion preventing plates 15 and 16 are bent at the tip end portion thereof in the lengthwise direction of the shutter 10 to form an L-shape, and the curved tip end portion and the shutter 10 are formed so as to prevent diffusion. Plates 15 and 16 and shutter 1
The cooperation with 0 can be made more effective. Next, the operation of the in-line sputtering apparatus of the present invention will be described based on the configuration of the in-line sputtering apparatus of the present invention described above.

FIG. 3 is a flow chart for explaining the operation of the in-line sputtering apparatus of the present invention, and FIGS. 4 and 5 are operation diagrams of the in-line sputtering apparatus of the present invention. The operation diagram of FIG. 4 shows the case where the sputtering process is performed by one target, and the operation diagram of FIG. 5 shows the case where the sputtering process is performed by the other target.

In FIGS. 4 and 5, 2 is a substrate, and 5 and 6.
Is a target, 10 is a shutter, and 15 and 16 are diffusion prevention plates. The target 5 will be described below by taking the operation diagram of FIG. 4 as an example.
Figure 3 shows the case of performing the sputtering process by
It will be described in accordance with the flowchart of. The steps S1 to S3 are shown in FIG.

Step S1: First, the substrate 2 is introduced into the chamber and conveyed to a position facing the target 5. Step S2: Next, the shutter 5 covers the target 5 on the side where pre-sputtering is performed.

By the cooperation of the shutter 10 and the diffusion prevention plate 15, in the pre-sputtering process of the target 5, the particles of the impurities released from the target 5 by the sputtering are the substrate 2, the central heater or the central deposition prevention plate, or the chamber. It can be prevented from adhering to the inner surface. The order of steps S1 and S2 may be reversed, and the substrate 5 may be introduced into the chamber after the target 5 is covered with the shutter 10.

Step S3: Target 5 is shutter 1
In the state of being covered with 0, the target 5 is pre-sputtered to clean impurities on the surface of the target 5. Steps S4 to S8 are shown in FIG.
Is shown in. Step S4: After the pre-sputtering process is completed, the shutter 10 is moved before the sputtering process. The shutter 10 is moved by operating a cylinder outside the chamber to drive a rack, a pinion, and a shutter drive unit.

The movement of the shutter 10 is performed in the next step S
5 and step S6. Step S5: The shutter 10 is removed from the target 5. There is nothing that shields between the target 5 and the substrate 2 by the movement of the shutter 10.
And the substrate 2 directly face each other.

Step S6: On the other hand, the target 6 on the non-sputtering side is covered by the shutter 10. Step S7: The target 5 is sputtered to form a thin film on the substrate 2. In the step of sputtering the target 5, the shutter 10 and the diffusion prevention plate 16 cooperate with each other to prevent particles emitted from the target 5 by sputtering from adhering to the target 6.

Step S8: Substrate 2 on which film formation processing has been performed
Are taken out of the chamber, and are transferred by the transfer means for the next process. FIG. 4 shows the case of the sputtering process with the target 5, but FIG. 5 shows the case of the sputtering process with the other target 6. The sputtering process with the target 6 is almost the same as the sputtering process with the target 5.

FIG. 5A shows a pre-sputtering process of the target 6. The shutter 10 is moved to the target 6 side, and the shutter 10 and the diffusion prevention plate 16 cooperate with each other to sputter the target 6. Particles of impurities emitted from the substrate 2 are prevented from adhering to the substrate 2, the central heater or the central deposition prevention plate, the chamber inner surface or the target 5.

Further, FIG. 5B shows a sputtering process of the target 6, in which the shutter 10 is used as the target 5.
By moving the shutter 10 and the diffusion prevention plate 15 to the side, particles emitted from the target 6 by sputtering can be prevented from adhering to the target 5. It should be noted that the present invention is not limited to the above-described embodiments, and various modifications can be made based on the spirit of the present invention, and they are not excluded from the scope of the present invention.

[0049]

As described above, according to the present invention, (1) what is sputtered at the time of pre-sputtering does not adhere to the inner surface of the chamber, and the cleaning of the chamber is small. (2) By covering the non-sputtered target, the contamination between the targets can be reduced. The effect is obtained.

[Brief description of drawings]

FIG. 1 is a configuration diagram of an in-line sputtering apparatus of the present invention.

FIG. 2 is a configuration diagram of a shutter of the in-line sputtering device of the present invention.

FIG. 3 is a flowchart explaining the operation of the in-line sputtering apparatus of the present invention.

FIG. 4 is an operation diagram of the in-line sputtering apparatus of the present invention.

FIG. 5 is an operation diagram of the in-line sputtering apparatus of the present invention.

FIG. 6 is a configuration diagram of a first conventional example of an in-line sputtering apparatus.

FIG. 7 is an operation diagram of a first conventional example of an in-line sputtering apparatus.

FIG. 8 is a configuration diagram of a second conventional example of the in-line sputtering apparatus.

[Explanation of symbols]

1 ... Chamber, 2 ... Substrate, 3 ... Substrate cart, 4 ... Substrate rail, 5, 6 ... Target, 7 ... Central heater or central deposition plate 10, 10 '... Shutter, 11 ... Shutter mechanism section, 12 ... Pinion , 13 ... rack, 14 ... cylinder,
15, 16 ... Diffusion prevention plate

Claims (1)

[Claims] 1. In an in-line sputtering apparatus, (a) a substrate on which a thin film is formed, (b) a plurality of targets that can be used independently, and (c) the target in a chamber of the in-line sputtering apparatus. A shutter movable between the substrate and the substrate, and (d) a diffusion prevention plate installed between the targets are provided, and (e) the shutter and the diffusion prevention plate cover the target to prevent contamination due to sputtering. An in-line sputtering device characterized by preventing.