JPH02141575A - Thin film depositing device - Google Patents
Thin film depositing deviceInfo
- Publication number
- JPH02141575A JPH02141575A JP29410488A JP29410488A JPH02141575A JP H02141575 A JPH02141575 A JP H02141575A JP 29410488 A JP29410488 A JP 29410488A JP 29410488 A JP29410488 A JP 29410488A JP H02141575 A JPH02141575 A JP H02141575A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- deposition
- shield
- film deposition
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000151 deposition Methods 0.000 title claims abstract description 26
- 239000010409 thin film Substances 0.000 title claims abstract description 5
- 239000010408 film Substances 0.000 claims abstract description 25
- 230000008021 deposition Effects 0.000 claims abstract description 22
- 238000000427 thin-film deposition Methods 0.000 claims abstract description 17
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 230000007246 mechanism Effects 0.000 claims abstract description 6
- 230000000181 anti-adherent effect Effects 0.000 claims description 5
- 238000012423 maintenance Methods 0.000 abstract description 8
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 230000003449 preventive effect Effects 0.000 abstract 4
- 206010040844 Skin exfoliation Diseases 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 230000003373 anti-fouling effect Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000002313 adhesive film Substances 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
(産業上の利用分野)
本発明は、CVD装置やスパッタリング装置などのよう
に電子部品や半導体デバイスの製造に用いられる薄膜堆
積装置の防着シールドに関するものである。DETAILED DESCRIPTION OF THE INVENTION (Industrial Application Field) The present invention relates to an anti-adhesion shield for thin film deposition equipment used in the manufacture of electronic components and semiconductor devices, such as CVD equipment and sputtering equipment.
(従来技術)
従来のこの種の装置に用いられている防着シールドは、
全て、真空容器内に固定されるものとなっており、薄膜
堆積工程を繰り返すうちに防着シールドの膜堆積面に堆
積した膜の膜厚が厚くなって、剥離を起こす危険を生じ
ると、真空を破って防着シールドを新しいものと交換す
る構成のものばかりであった。(Prior art) The anti-contamination shield used in conventional devices of this type is
All of them are fixed in a vacuum container, and if the film deposited on the film deposition surface of the anti-stick shield becomes thicker as the thin film deposition process is repeated and there is a risk of peeling, the vacuum Most of them had a structure in which the anti-corrosion shield was replaced with a new one by tearing it down.
(発明が解決しようとする問題点)
しかしながら上記のような従来の薄膜堆積装置において
、特に剥離を起こしやすい膜を堆積する場合には、頻繁
な防着シールドの交換が必要となり、手間がかかる上に
、とかくメンテナンスに長時間を要するという欠点、お
よび、真空を破り大気圧にするため、メンテナンス後の
成膜の安定性が悪くなるという欠点があった。(Problems to be Solved by the Invention) However, in the conventional thin film deposition apparatus as described above, when depositing a film that is particularly prone to peeling, frequent replacement of the anti-adhesion shield is required, which is time-consuming and time-consuming. However, there were disadvantages in that maintenance required a long time, and that the stability of film formation after maintenance deteriorated because the vacuum was broken to atmospheric pressure.
(発明の目的)
本発明はこの問題を解決し、防着シールドの交換周期即
ちメンテナンス周期の長い薄膜堆積装置を提供すること
を目的とする。(Objective of the Invention) An object of the present invention is to solve this problem and provide a thin film deposition apparatus in which the exchange period of the anti-adhesive shield, that is, the maintenance period is long.
(問題を解決するための手段)
本発明は、真空容器内で薄膜を堆積させる薄膜堆積装置
において、目的とする基板以外の部分を薄膜堆積から遮
蔽するための防着シールド膜堆積面を該真空容器内に複
数面用意し、該容器内を真空に保ったままの状態で、こ
れら複数の防着シールド膜堆積面を交換できる機構を設
けたものである。(Means for Solving the Problem) The present invention provides a thin film deposition apparatus for depositing a thin film in a vacuum container, in which a deposition surface of an anti-adhesion shield film for shielding parts other than a target substrate from thin film deposition is removed from the vacuum chamber. A mechanism is provided in which a plurality of surfaces are prepared in a container and the plurality of deposition shield film surfaces can be replaced while the container is kept in a vacuum.
(作用)
真空容器内に用意された複数の防着シールド膜堆積面の
、現在使用中の面に膜が堆積し、剥離を起こす危険を生
じると、真空を保持したままこれを別の新しい防着シー
ルド膜堆積面と交換する。(Function) If a film is deposited on the currently used surface of the multiple adhesion-prevention shield film deposition surfaces prepared in the vacuum container and there is a risk of peeling, a new barrier film is installed to remove the film while maintaining the vacuum. Replace it with the surface on which the attached shield film is deposited.
この方法により、全ての防着シールド膜堆積面が堆積膜
で覆われた時点でのみ真空を破り全防着シールドを取り
出して交換することが可能となって、メンテナンスの大
幅な簡略化ができる。With this method, it becomes possible to break the vacuum and take out and replace all the anti-adhesive shields only when all the anti-adhesive shield film deposition surfaces are covered with the deposited film, which greatly simplifies maintenance.
(実施例)
第1図は本発明の第1の実施例の薄膜堆積装置の概略の
正面断面図であって、スパッタ装置に本発明を適用した
場合を示している。(Embodiment) FIG. 1 is a schematic front sectional view of a thin film deposition apparatus according to a first embodiment of the present invention, and shows a case where the present invention is applied to a sputtering apparatus.
1はターゲラ)・、2は真空容器、3はロードロック室
、4はアンロードロック室、30.40はゲートバルブ
、5はローラー群、6は基板、7は基板ホルダー 81
〜84.91〜94はそれぞれシールド板、80.90
はそれぞれシールド板の回転機構である。1 is a vacuum container, 3 is a load lock chamber, 4 is an unload lock chamber, 30.40 is a gate valve, 5 is a roller group, 6 is a substrate, 7 is a substrate holder 81
~84.91~94 are shield plates, respectively, 80.90
are the rotation mechanisms of the shield plates, respectively.
これを動作するには、ローラー群5を用いゲートバルブ
30を通してロードロック室3より基板6および基板ホ
ルダー7を真空容器2内に搬送し、図示しないカス導入
系、ガス排気系、電源を生かして放電を起こし、ターゲ
ット1よりスパッタした粒子を基板6に堆積させる。To operate this, the substrate 6 and substrate holder 7 are transported from the load lock chamber 3 through the gate valve 30 into the vacuum chamber 2 using the roller group 5, and the waste introduction system, gas exhaust system, and power supply (not shown) are utilized. A discharge is generated, and particles sputtered from the target 1 are deposited on the substrate 6.
堆積終了後は再びローラー群5を用いゲートバルブ40
およびロードロック室4より基板6および基板ホルダー
7を取り出す。After the deposition is completed, the roller group 5 is used again to close the gate valve 40.
Then, the substrate 6 and substrate holder 7 are taken out from the load lock chamber 4.
上記のスパッタリング工程を何度か繰り返し、水平状態
にあるシールド板81.91の表面、および、垂直状態
にある82.92の裏面(それぞれは防着シールド膜堆
積面である)に、剥離の危険があるほどの膜堆積を生じ
ると、真空状態はそのままにして、シールド板回転機構
80.90を用いてシールド板82.92を906回転
させてそれぞれ81.91の上に重ね、新しい防着シー
ルド膜堆積面を露出させる。そしてこれを繰り返すO
このような構成では、各防着シールド81〜84、およ
び、91〜940全膜堆積面か膜堆積で覆われるまでは
、真空を破る必要はない。従ってメンテナンス時間の大
幅な短縮が達成される。By repeating the above sputtering process several times, there is a risk of peeling on the surface of the shield plate 81.91 in the horizontal state and the back surface of the shield plate 82.92 in the vertical state (each is the surface on which the anti-adhesion shield film is deposited). When a certain amount of film has been deposited, the vacuum state is left as it is, and the shield plates 82 and 92 are rotated 906 times using the shield plate rotation mechanism 80 and 90, and placed on top of each of the shield plates 81 and 91, and a new anti-fouling shield is installed. Expose the film deposition surface. This is then repeated. With such a configuration, there is no need to break the vacuum until the entire film deposition surface of each of the deposition shields 81 to 84 and 91 to 940 is covered with film deposition. Therefore, a significant reduction in maintenance time is achieved.
第2図は本発明の第2の実施例の要部(防着シールド部
)の正面断面図である。FIG. 2 is a front sectional view of the main part (anti-adhesion shield part) of the second embodiment of the present invention.
10はシールドシート供給ロール、11は未使用シール
ドシート、12はシールドシート巻き取りロール、13
は使用済みシールドシート、14は防着膜堆積用に使用
中のシールドシートである。10 is a shield sheet supply roll, 11 is an unused shield sheet, 12 is a shield sheet winding roll, 13
14 is a used shield sheet, and 14 is a shield sheet currently in use for depositing an anti-adhesive film.
これを動作させるには、シールドシート14上に膜が堆
積し剥離を起こす危険がある状態に達すると、真空容器
内の真空はそのままの状態で、ロール10.12を回転
させて未使用シール1ζシートを繰り出して、新しい防
着シールド膜堆積面を露出させる。但し、上記の動作が
可能であるように、シールドシートには一定長毎に基板
6の薄膜堆積面に合わせた窓が空けられており、この窓
を通して基板6に薄膜の堆積を行なうようになっている
。以上の構成によって、メンテナンス周期は大いに引き
延ばすことが可能となる。To operate this, when the film has accumulated on the shield sheet 14 and reaches a state where there is a risk of peeling, the roll 10.12 is rotated to seal the unused seal 1ζ while the vacuum inside the vacuum container remains unchanged. Unroll the sheet to expose the new anti-fouling shield film deposition surface. However, in order to enable the above operation, windows are formed in the shield sheet at fixed lengths to match the thin film deposition surface of the substrate 6, and the thin film is deposited on the substrate 6 through these windows. ing. With the above configuration, the maintenance cycle can be greatly extended.
なお、第1の実施例ではシールド板の両面を膜堆積面に
、使って防着シールドを構成したが、何層かに重ねた防
着シールドを上から一枚づつ剥して使用するとか、また
は、−枚づつ上に重ねて新しい膜堆積面を露出し使用す
るような構成にすることでも、第1の実施例と同一の効
果が得られる。In the first embodiment, the anti-adhesion shield was constructed by using both sides of the shield plate as the film deposition surface. The same effect as in the first embodiment can be obtained by stacking one layer on top of the other to expose and use a new film deposition surface.
なおまた、本発明は、スパッタ装置のみならず、CVD
、プラズマCVD、電子サイクロトロン共鳴を利用する
薄膜堆積装置などにも適用することが可能である。Furthermore, the present invention applies not only to sputtering equipment but also to CVD
, plasma CVD, and thin film deposition equipment that utilizes electron cyclotron resonance.
(発明の効果)
本発明の装置によれは、従来防着シールドの交換用のた
めのメンテナンス周期を飛躍的に延ばすことが可能であ
る。(Effects of the Invention) With the device of the present invention, it is possible to dramatically extend the maintenance cycle for replacing conventional anti-corrosion shields.
第1図は、本発明の第1の実施例のスパッタ装置の概略
の正面断面図。
第2図は、本発明の第2の実施例の要部の正面断面図。
特許出願人 日電アネルバ株式会社
代理人 弁理士 村上 健次
手続補正書(方式)
1、事件の表示
昭和63年特許願第294104号
2、発明の名称 薄膜堆積装置
3、補正をする者
事件との関係 特許出願人
住所 東京都府中市四谷5−8−1
5゜
6゜
補正命令の日付
平成1年3月7日
補正の対象
明細書
(発迦日)
7゜
補正の内容FIG. 1 is a schematic front sectional view of a sputtering apparatus according to a first embodiment of the present invention. FIG. 2 is a front sectional view of main parts of a second embodiment of the present invention. Patent Applicant Nichiden Anelva Co., Ltd. Agent Patent Attorney Kenji Murakami Procedural Amendment (Method) 1. Indication of the case Patent Application No. 294104 filed in 1988 2. Title of the invention Thin film deposition device 3. Person making the amendment Relationship with the case Patent applicant address: 5-8-1 Yotsuya, Fuchu-shi, Tokyo 5゜6゜Date of amendment order: March 7, 1999 Specification subject to amendment (date of issue) 7゜Contents of amendment
Claims (3)
いて、目的とする基板以外の部分を薄膜堆積から遮蔽す
るための防着シールド膜堆積面を該真空容器内に複数面
用意し、該容器内を真空に保ったままの状態で、これら
複数の防着シールド膜堆積面を交換できる機構を設けた
ことを特徴とする薄膜堆積装置。(1) In a thin film deposition apparatus that deposits a thin film in a vacuum container, a plurality of anti-adhesion shield film deposition surfaces for shielding parts other than the target substrate from thin film deposition are prepared in the vacuum container, and the container A thin film deposition apparatus characterized by being provided with a mechanism that allows the deposition surfaces of the plurality of anti-adhesive shield films to be exchanged while the inside is kept in a vacuum state.
1項記載の薄膜堆積装置。(2) The thin film deposition apparatus according to claim 1, wherein the anti-adhesion shield is plate-shaped.
囲第1項記載の薄膜堆積装置。(3) The thin film deposition apparatus according to claim 1, wherein the anti-adhesion shield is in the form of a sheet.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63294104A JP2544192B2 (en) | 1988-11-21 | 1988-11-21 | Thin film deposition equipment |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63294104A JP2544192B2 (en) | 1988-11-21 | 1988-11-21 | Thin film deposition equipment |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH02141575A true JPH02141575A (en) | 1990-05-30 |
JP2544192B2 JP2544192B2 (en) | 1996-10-16 |
Family
ID=17803340
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP63294104A Expired - Fee Related JP2544192B2 (en) | 1988-11-21 | 1988-11-21 | Thin film deposition equipment |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2544192B2 (en) |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5589224A (en) * | 1992-09-30 | 1996-12-31 | Applied Materials, Inc. | Apparatus for full wafer deposition |
US5951775A (en) * | 1992-09-30 | 1999-09-14 | Applied Materials, Inc. | Apparatus for full wafer deposition |
US6132566A (en) * | 1998-07-30 | 2000-10-17 | Applied Materials, Inc. | Apparatus and method for sputtering ionized material in a plasma |
US6190513B1 (en) | 1997-05-14 | 2001-02-20 | Applied Materials, Inc. | Darkspace shield for improved RF transmission in inductively coupled plasma sources for sputter deposition |
US6264812B1 (en) | 1995-11-15 | 2001-07-24 | Applied Materials, Inc. | Method and apparatus for generating a plasma |
JP2002038253A (en) * | 2000-07-25 | 2002-02-06 | Futaba Corp | Deposition shield and vacuum film-formation equipment therewith |
US6565717B1 (en) | 1997-09-15 | 2003-05-20 | Applied Materials, Inc. | Apparatus for sputtering ionized material in a medium to high density plasma |
JP2008202072A (en) * | 2007-02-19 | 2008-09-04 | Fujitsu Ltd | Film deposition system and film deposition method |
EP2103709A1 (en) * | 2008-02-28 | 2009-09-23 | Applied Materials, Inc. | Backside coating prevention device and method. |
CN102759578A (en) * | 2011-04-28 | 2012-10-31 | 光洋应用材料科技股份有限公司 | Sputtering target detection mechanism |
JP2015025171A (en) * | 2013-07-26 | 2015-02-05 | 株式会社Screenホールディングス | Sputtering device |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6227569A (en) * | 1985-07-26 | 1987-02-05 | Fuji Electric Co Ltd | Thin film producing apparatus |
JPS6332861A (en) * | 1986-07-24 | 1988-02-12 | Mitsubishi Electric Corp | Fuel cell |
JPS6445760U (en) * | 1987-09-14 | 1989-03-20 |
-
1988
- 1988-11-21 JP JP63294104A patent/JP2544192B2/en not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6227569A (en) * | 1985-07-26 | 1987-02-05 | Fuji Electric Co Ltd | Thin film producing apparatus |
JPS6332861A (en) * | 1986-07-24 | 1988-02-12 | Mitsubishi Electric Corp | Fuel cell |
JPS6445760U (en) * | 1987-09-14 | 1989-03-20 |
Cited By (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5951775A (en) * | 1992-09-30 | 1999-09-14 | Applied Materials, Inc. | Apparatus for full wafer deposition |
US5589224A (en) * | 1992-09-30 | 1996-12-31 | Applied Materials, Inc. | Apparatus for full wafer deposition |
US6264812B1 (en) | 1995-11-15 | 2001-07-24 | Applied Materials, Inc. | Method and apparatus for generating a plasma |
US6297595B1 (en) | 1995-11-15 | 2001-10-02 | Applied Materials, Inc. | Method and apparatus for generating a plasma |
US6190513B1 (en) | 1997-05-14 | 2001-02-20 | Applied Materials, Inc. | Darkspace shield for improved RF transmission in inductively coupled plasma sources for sputter deposition |
US6565717B1 (en) | 1997-09-15 | 2003-05-20 | Applied Materials, Inc. | Apparatus for sputtering ionized material in a medium to high density plasma |
US6132566A (en) * | 1998-07-30 | 2000-10-17 | Applied Materials, Inc. | Apparatus and method for sputtering ionized material in a plasma |
JP2002038253A (en) * | 2000-07-25 | 2002-02-06 | Futaba Corp | Deposition shield and vacuum film-formation equipment therewith |
JP2008202072A (en) * | 2007-02-19 | 2008-09-04 | Fujitsu Ltd | Film deposition system and film deposition method |
EP2103709A1 (en) * | 2008-02-28 | 2009-09-23 | Applied Materials, Inc. | Backside coating prevention device and method. |
WO2009144255A1 (en) * | 2008-02-28 | 2009-12-03 | Applied Materials, Inc. | Backside coating prevention device and method |
CN102759578A (en) * | 2011-04-28 | 2012-10-31 | 光洋应用材料科技股份有限公司 | Sputtering target detection mechanism |
CN102759578B (en) * | 2011-04-28 | 2015-03-18 | 光洋应用材料科技股份有限公司 | Sputtering target detection mechanism |
JP2015025171A (en) * | 2013-07-26 | 2015-02-05 | 株式会社Screenホールディングス | Sputtering device |
Also Published As
Publication number | Publication date |
---|---|
JP2544192B2 (en) | 1996-10-16 |
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