JPH06150829A - Surge absorbing element - Google Patents

Surge absorbing element

Info

Publication number
JPH06150829A
JPH06150829A JP5873992A JP5873992A JPH06150829A JP H06150829 A JPH06150829 A JP H06150829A JP 5873992 A JP5873992 A JP 5873992A JP 5873992 A JP5873992 A JP 5873992A JP H06150829 A JPH06150829 A JP H06150829A
Authority
JP
Japan
Prior art keywords
surge absorbing
metal
surge
metal cap
absorbing element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5873992A
Other languages
Japanese (ja)
Inventor
Yasumoto Unoki
保元 宇ノ木
Hiroko Kurokawa
裕子 黒川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tama Electric Co Ltd
Original Assignee
Tama Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tama Electric Co Ltd filed Critical Tama Electric Co Ltd
Priority to JP5873992A priority Critical patent/JPH06150829A/en
Publication of JPH06150829A publication Critical patent/JPH06150829A/en
Pending legal-status Critical Current

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Abstract

PURPOSE:To enable an overvoltage to be absorbed by a surge absorbing element by forming a slight clearance between a surge absorbing portion and an electrode, and.sealing gas between the electrodes by insulative coating member. CONSTITUTION:A cylindrical ceramic (insulator) 1 has a large center and both narrow ends. A carbon alloy or metal coating film 2 having a surge absorbing characteristic is stuck to the large center portion, thus obtaining a surge absorbing portion. Terminals 4 are jointed to the ceramic portion at the narrow ends via metal caps 3, thereby providing electrodes. A slight clearance 7 is formed between the metal cap 3 and the surge absorbing portion. Sealing gas is sealed between the electrodes with the terminals 4 fixed thereto by an insulative coating member by utilizing the surface nearest the electrode of the carbon alloy in the broad center portion and the cross section of the metal cap 3 nearest the electrode. Consequently, a surge voltage is absorbed by the surge absorbing portion so that durability of a surge absorbing element is enhanced.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は半導体素子等の電極間に
かかる過電圧を吸収するサージ吸収素子に関するもので
ある。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a surge absorbing element which absorbs an overvoltage applied between electrodes of a semiconductor element or the like.

【0002】[0002]

【従来の技術】従来この種の皮膜型サージ吸収素子は円
筒状のセラミックに金属酸化物等による皮膜を付着さ
せ、その両端に端子を接合した金属キャップを取付、金
属酸化物等による皮膜の中心部をレザー光等により円周
状に加工跡を入れる事により分断し、金属酸化物等によ
る皮膜の断面を放電ギャップとして利用していた。この
方式は金属酸化物等による皮膜が厚いといわれる金属酸
化物でさえ1ミクロン(μm)前後でありスパッター蒸
着法等による金属薄膜の場合では0.2ミクロン(μ
m)前後と非常に小さい体積しか得られない為、放電の
際に発生する発熱によ劣化が著しくサージ吸収素子とし
ての耐久性に問題があった。更にセラミック基板例えば
フォルステライト、ステアタイト等熱伝導度の悪いセラ
ミック等が使用され熱伝導度の比較的良好なアルミナ磁
器でも熱伝導度は17から21W/m・Kであった。こ
れらのセラミックの熱伝導特性の悪さが金属酸化物等の
膜厚に起因する(膜厚が薄い為)放電発熱による劣化の
進行を促進する欠点があった。
2. Description of the Related Art Conventionally, this type of film type surge absorbing element has a cylindrical ceramic film coated with a metal oxide or the like, and a metal cap with terminals bonded to both ends of the film, and the center of the film coated with the metal oxide or the like. The portion was divided by forming a processing mark in a circular shape by a laser light or the like, and the cross section of the film made of metal oxide or the like was used as a discharge gap. This method is around 1 micron (μm) even for metal oxides, which are said to have a thick coating of metal oxides, and 0.2 micron (μm) for metal thin films formed by sputter deposition.
m) Since only a very small volume is obtained, the deterioration due to the heat generated during discharge is remarkable and there is a problem in durability as a surge absorbing element. Further, even if the ceramic substrate such as forsterite, steatite or the like having a poor thermal conductivity is used and the alumina porcelain having a relatively good thermal conductivity is used, the thermal conductivity is 17 to 21 W / mK. The poor thermal conductivity of these ceramics has a drawback of promoting the progress of deterioration due to discharge heat generation due to the film thickness of the metal oxide or the like (since the film thickness is thin).

【0003】[0003]

【発明が解決しようとする課題】[Problems to be Solved by the Invention]

1.円筒形セラミックの表面に付着させた、金属酸化物
による皮膜の切断と言う放電ギャップの小さい面及び、
その反対側の一方の金属キャップの断面を厚くし、摩耗
の少ない耐久性のある製品にした。更にもう一方を皮膜
を皮膜の表面を利用して広い面積が利用できる様にした
事によりサージ吸収素子の耐久性を向上させる事。 2.サージ吸収素子の基板となるセラミックに酸化ジル
コニューム磁器を使用する事により放電の際に発生する
放電発熱、又放電を止めたときの基板にかかる温度サイ
クル特性の向上を目的とするものである。
1. A surface with a small discharge gap called cutting of a film by a metal oxide attached to the surface of a cylindrical ceramic, and
The cross section of one metal cap on the opposite side was thickened to make a durable product with less wear. Improve the durability of the surge absorbing element by making the other surface a large area by using the surface of the film. 2. By using zirconium oxide porcelain for the ceramic that serves as the substrate of the surge absorbing element, the purpose is to improve the heat generation due to discharge generated during discharge and the temperature cycle characteristics applied to the substrate when the discharge is stopped.

【0004】[0004]

【課題を解決するための手段】[Means for Solving the Problems]

1.本発明は太い中心部と細い両端部をもつ円筒形のセ
ラミックの太い中心部にサージ吸収特性をゆうする炭素
合金若しくは金属皮膜を付着させてサージ吸収部とし、
両端の細いセラミック部分に金属キャップに端子を接合
して電極部を構成させ、該金属キャップとサージ吸収部
との間に若干の空間を設ける事により、太い中心部に付
着させた炭素合金若しくは金属皮膜の電極部に最も近い
表面と電極部に最も近い該金属キャップの断面を利用し
て放電させ、サージ吸収部によってサージ電圧を吸収す
る。 2.請求項1に於て、太い中心部と細い両端部をもつ円
筒形のセラミックにサージ吸収特性を有する炭素合金若
しくは金属皮膜を付着させ、両端の細い部分に金属キャ
ップを取付、更に該金属キャップに端子を接合してサー
ジ吸収素子とする。該サージ吸収素子の金属キャップの
内側端面及び金属キャップの内側端面真下の炭素合金若
しくは金属皮膜をレザー光等の加工機を利用して円周に
沿って皮膜をセラミックから完全に除去すり事により金
属キャップ部分を電極部に、中心部の炭素合金若しくは
金属皮膜部分をサージ吸収部に分割し、該金属キャップ
内側端面即ち、サージ吸収部に最も近い金属キャップ端
面と該金属キャップに最も近い炭素合金若しくは金属皮
膜の表面間を利用して放電させ、上記サージ吸収部によ
ってサージ電圧を吸収する。
1. The present invention is a surge absorbing portion by adhering a carbon alloy or a metal film having a surge absorbing characteristic to the thick central portion of a cylindrical ceramic having a thick central portion and narrow both ends,
A carbon alloy or metal adhered to the thick center part is formed by joining terminals to the metal caps on the thin ceramic parts at both ends to form an electrode part and providing a slight space between the metal cap and the surge absorbing part. The surface of the film closest to the electrode portion and the cross section of the metal cap closest to the electrode portion are used to discharge, and the surge absorbing portion absorbs the surge voltage. 2. In Claim 1, a carbon alloy or a metal film having a surge absorbing property is adhered to a cylindrical ceramic having a thick center portion and narrow both ends, metal caps are attached to the narrow portions at both ends, and the metal cap is further attached. Join the terminals to make a surge absorbing element. The inner surface of the metal cap of the surge absorbing element and the carbon alloy or the metal film immediately below the inner end surface of the metal cap are completely removed from the ceramic along the circumference by using a laser light processing machine. The cap portion is divided into the electrode portion and the central carbon alloy or metal film portion is divided into the surge absorbing portion, and the inner end surface of the metal cap, that is, the end surface of the metal cap closest to the surge absorbing portion and the carbon alloy closest to the metal cap or Electric discharge is made between the surfaces of the metal film, and the surge voltage is absorbed by the surge absorbing section.

【0005】[0005]

【実施例】【Example】

1.太い中心部と細い両端部をもつ円筒形のアルミナセ
ラミックの太い中心部に錫/アンチモン(Sn/Sb)
系合金皮膜を付着させ、両端の細いアルミナセラミック
部分に端子付き金属キャップを接合して電極部を構成さ
せ、該金属キャップと錫/アンチモン合金皮膜との間に
0.1〜0.5mmの空間を設け、該両電極間に各々取
付た端子の、該両電極間にアルゴンガスを絶縁性被覆材
を用いて封入したサージ吸収素子
1. Tin / antimony (Sn / Sb) is added to the thick center of a cylindrical alumina ceramic with a thick center and narrow ends.
A system alloy film is attached, and metal caps with terminals are joined to the thin alumina ceramic parts at both ends to form an electrode part, and a space of 0.1 to 0.5 mm is provided between the metal cap and the tin / antimony alloy film. And a surge absorbing element in which a terminal is attached between the both electrodes and argon gas is enclosed between the both electrodes by using an insulating coating material.

【発明の効果】【The invention's effect】

【0006】従来のサージ吸収素子は絶縁体(絶縁円柱
体)にムライト磁器、フオルステライト磁器、アルミナ
磁器、ステアタイト磁器等に導電性金属、又は金属酸化
物の皮膜が付着している為、耐圧、熱サイクルによつて
破断現象を起こし易い欠点があつた。そこで、これらの
欠点を改善したものとして、熱サイクル、熱衝撃に強い
酸化ジルコニ−ム(ZrO2)セラミックの円柱表面に
導電性金属、又は金属酸化物を付着させ該酸化ジルコニ
−ム(ZrO2)セラミックの両端に耐喰性に富み且
つ、電気性の高い金属又は合金片を固定させて電極を形
成させ、しかる後、該導電性金属、金属酸化物を膜厚
0.1μm〜30μm、巾10μm〜200μmの円周
状のギャップをレザ−トリミングして刻設し、このマイ
クロギャップ より巾太いリニアギャップをこれに交差
するように刻設して複数個に分割し、該両電極に各々端
子を取付けてなる素子の該両電極間に窒素ガス及びアル
ゴンガ ス混合ガスの絶縁性被覆材を用いて封入した構
成である。
In the conventional surge absorbing element, a film of conductive metal or metal oxide adheres to mullite porcelain, forsterite porcelain, alumina porcelain, steatite porcelain, etc. on an insulator (insulating columnar body), so However, there is a drawback that the thermal cycle easily causes a rupture phenomenon. Therefore, as an improvement over these drawbacks, thermal cycles, strong oxidizing zirconium in thermal shock - arm (ZrO 2) a conductive metal to the ceramic cylindrical surface, or a metal oxide deposited was oxide zirconium - arm (ZrO 2 ) A metal or alloy piece having a high corrosion resistance and high electric property is fixed to both ends of the ceramic to form an electrode, and thereafter, the conductive metal or metal oxide is formed into a film having a thickness of 0.1 μm to 30 μm and a width. A circular gap of 10 μm to 200 μm is engraved by laser trimming, and a linear gap wider than this microgap is engraved so as to intersect with this and divided into a plurality of parts, and each of these electrodes has a terminal. This is a structure in which an insulating coating material of a mixed gas of nitrogen gas and argon gas is enclosed between the both electrodes of the element to which is attached.

【図面の簡単な説明】[Brief description of drawings]

【図1】傾視図である。FIG. 1 is a perspective view.

【図2】展開図である。FIG. 2 is a development view.

【図3】マイクロギャップと放電開始電圧を示す相関図
である。
FIG. 3 is a correlation diagram showing a microgap and a discharge start voltage.

【符号の説明】[Explanation of symbols]

1 絶縁体 2 金属酸化物 3 金属キャップ(電極) 4 端子 5 鉛ガラス 6 不活性ガス 7 マイクロギャップ 1 Insulator 2 Metal Oxide 3 Metal Cap (Electrode) 4 Terminal 5 Lead Glass 6 Inert Gas 7 Micro Gap

Claims (8)

【特許請求の範囲】[Claims] 【請求項1】 太い中心部と細い両端部をもつ円筒形の
セラミックの太い中心部にサージ吸収特性をゆうする炭
素合金若しくは金属皮膜を付着させてサージ吸収部と
し、両端の細いセラミック部分に金属キャップに端子を
接合して電極部を構成させ、該金属キャップとサージ吸
収部との間に若干の空間を設ける事により、太い中心部
に付着させた炭素合金若しくは金属皮膜の電極部に最も
近い表面と電極部に最も近い該金属キャップの断面を利
用し、該両電極に各々端子を取り付けてなる素子の該両
電極間に封入ガスを絶縁性被覆材を用いて封入する事を
特徴とするサージ吸収素子
1. A cylindrical ceramic having a thick central portion and narrow both ends, a carbon alloy or a metal film having a surge absorbing characteristic is adhered to the thick central portion to form a surge absorbing portion, and the thin ceramic portions at both ends are made of metal. The terminal is joined to the cap to form the electrode part, and by providing a slight space between the metal cap and the surge absorbing part, it is closest to the electrode part of the carbon alloy or metal film attached to the thick center part. A cross-section of the metal cap closest to the surface and the electrode portion is used, and a filling gas is sealed between the both electrodes of an element having terminals attached to the both electrodes by using an insulating coating material. Surge absorption element
【請求項2】 請求項第1項に於て、太い中心部と細い
両端部をもつ円筒形のセラミックにサージ吸収特性を有
する炭素合金若しくは金属皮膜を付着させ、両端の細い
部分に金属キャップを取付、更に該金属キャップに端子
を接合してサージ吸収素子とする。該サージ吸収素子の
金属キャップの内側端面及び金属キャップの内側端面著
直下の炭素合金若しくは金属皮膜をレザー光等の加工機
を利用して円周に沿って皮膜をセラミックから完全に除
去する事により金属キャップ部分を電極部に、中心部の
炭素合金若しくは金属皮膜部分をサージ吸収部に分割
し、該金属キャップ内側端面即ち、サージ吸収部に最も
近い金属キャップ端面と該金属キャップに最も近い炭素
合金若しくは金属皮膜の表面間を利用して放電させ、上
記サージ吸収部によってサージ電圧を吸収する事を特徴
とするサージ吸収素子
2. The method according to claim 1, wherein a carbon alloy or a metal film having surge absorbing characteristics is adhered to a cylindrical ceramic having a thick center portion and narrow end portions, and a metal cap is attached to the narrow end portions. The surge absorbing element is mounted by attaching the metal cap and the terminal to the metal cap. By completely removing the carbon alloy or the metal film directly below the inner end surface of the metal cap and the inner end surface of the metal cap of the surge absorbing element from the ceramic along the circumference by using a processing machine such as laser light. The metal cap portion is divided into the electrode portion, the central carbon alloy or the metal film portion is divided into the surge absorbing portion, and the metal cap inner end surface, that is, the metal cap end surface closest to the surge absorbing portion and the carbon alloy closest to the metal cap are divided. Alternatively, the surge absorbing element is characterized in that the surge absorbing portion absorbs the surge voltage by discharging between the surfaces of the metal film.
【請求項3】 前記導電性金属叉は金属酸化物はは酸化
錫(SnO2)酸化ルテニーム(RuO2)等よりなる群
の中から選定した一種類である請求項1、2に記載のサ
ージ吸収素子。
3. The surge according to claim 1, wherein the conductive metal or metal oxide is one selected from the group consisting of tin oxide (SnO 2 ), ruthenium oxide (RuO 2 ), and the like. Absorption element.
【請求項4】 前記導電性金属は炭素と珪素化合物の炭
素合金皮膜である特許請求の範囲1、2に記載のサージ
吸収素子。
4. The surge absorbing element according to claim 1, wherein the conductive metal is a carbon alloy film of carbon and a silicon compound.
【請求項5】 耐食性に富みかつ電気伝導度の高い金属
片はステンレス・スチール、又はコバールである請求項
1、2に記載のサージ吸収素子。
5. The surge absorbing element according to claim 1, wherein the metal piece having high corrosion resistance and high electric conductivity is stainless steel or Kovar.
【請求項6】 前記絶縁体は熱伝導率70〜200W/
mKの絶縁体である請求項1、2に記載のサージ吸収素
子。
6. The insulator has a thermal conductivity of 70 to 200 W /
The surge absorbing element according to claim 1, which is an insulator of mK.
【請求項7】 前記絶縁体は窒化アルミナ(Al
2)、酸化ベリリュウム(BeO2)よりなる群のなか
から選定した一種類である請求項1、2に記載のサージ
吸収素子。
7. The insulator is alumina nitride (Al
The surge absorbing element according to claim 1, wherein the surge absorbing element is one selected from the group consisting of N 2 ), and beryllium oxide (BeO 2 ).
【請求項8】 前記封入ガスN2ガス90〜99%及び
アルゴンガス1〜10%よりなる混合ガスである請求項
1、2に記載のサージ吸収素子。
8. The surge absorbing element according to claim 1, wherein the surge absorbing element is a mixed gas composed of 90 to 99% of the enclosed gas N 2 gas and 1 to 10% of argon gas.
JP5873992A 1992-02-13 1992-02-13 Surge absorbing element Pending JPH06150829A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5873992A JPH06150829A (en) 1992-02-13 1992-02-13 Surge absorbing element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5873992A JPH06150829A (en) 1992-02-13 1992-02-13 Surge absorbing element

Publications (1)

Publication Number Publication Date
JPH06150829A true JPH06150829A (en) 1994-05-31

Family

ID=13092890

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5873992A Pending JPH06150829A (en) 1992-02-13 1992-02-13 Surge absorbing element

Country Status (1)

Country Link
JP (1) JPH06150829A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100817485B1 (en) * 2007-08-28 2008-03-31 김선호 Discharge element with discharge-control electrode and the control circuit thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100817485B1 (en) * 2007-08-28 2008-03-31 김선호 Discharge element with discharge-control electrode and the control circuit thereof

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