JPH054795B2 - - Google Patents
Info
- Publication number
- JPH054795B2 JPH054795B2 JP11212186A JP11212186A JPH054795B2 JP H054795 B2 JPH054795 B2 JP H054795B2 JP 11212186 A JP11212186 A JP 11212186A JP 11212186 A JP11212186 A JP 11212186A JP H054795 B2 JPH054795 B2 JP H054795B2
- Authority
- JP
- Japan
- Prior art keywords
- exterior body
- ceramic element
- insulator
- ceramic
- conductive film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000919 ceramic Substances 0.000 claims description 48
- 239000012212 insulator Substances 0.000 claims description 21
- 230000002093 peripheral effect Effects 0.000 claims description 9
- 238000010521 absorption reaction Methods 0.000 claims description 8
- 239000007789 gas Substances 0.000 description 6
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000004927 fusion Effects 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- 229910052573 porcelain Inorganic materials 0.000 description 4
- 239000006096 absorbing agent Substances 0.000 description 3
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 229910052839 forsterite Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 229910000833 kovar Inorganic materials 0.000 description 1
- HCWCAKKEBCNQJP-UHFFFAOYSA-N magnesium orthosilicate Chemical compound [Mg+2].[Mg+2].[O-][Si]([O-])([O-])[O-] HCWCAKKEBCNQJP-UHFFFAOYSA-N 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910052863 mullite Inorganic materials 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Landscapes
- Thermistors And Varistors (AREA)
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は円筒型サージ吸収素子に係り、特に組
立てが容易でしかも小型化を図ることが可能な円
筒型サージ吸収素子に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a cylindrical surge absorbing element, and particularly to a cylindrical surge absorbing element that is easy to assemble and can be downsized.
［従来の技術］
サージ電圧を吸収するサージ吸収素子には、ギ
ヤツプ式サージ吸収器又は酸化亜鉛系バリスタ等
の電圧非直線抵抗体等が現在広く用いられてい
る。しかしながら、ギヤツプ式サージ吸収器は、
放電遅れが大きく、明暗効果により特性の安定性
に欠けること、及び、酸化亜鉛系バリスタでは絶
縁抵抗が小さいことから、十分なサージ電圧吸収
効果が得られないという欠点を有している。[Prior Art] As a surge absorption element that absorbs surge voltage, a gap type surge absorber or a voltage nonlinear resistor such as a zinc oxide varistor is currently widely used. However, the gap type surge absorber
The drawbacks are that the discharge delay is large, the characteristics lack stability due to light and shade effects, and the zinc oxide-based varistor has low insulation resistance, so a sufficient surge voltage absorption effect cannot be obtained.
本出願人は、このような従来のサージ吸収素子
の特性不良を解消するものとして、マイクロギヤ
ツプ式サージ吸収素子を見出し、先に特許出願し
た（特開昭55−128283。以下、「先願」という。）
先願のサージ吸収素子は、第２図に示す如く、
セラミツクス絶縁体１１の表面にマイクロギヤツ
プの絶縁溝１２を有する導電性皮膜１３を形成し
たセラミツクス素子１４の両端にリード線１５付
の電極１６を設け、これを絶縁性の外装体１７内
に入れ、その両端を熱融着等で付着してなるもの
である。 The present applicant discovered a micro-gap type surge absorbing element as a solution to the poor characteristics of conventional surge absorbing elements, and filed a patent application earlier (Japanese Patent Laid-Open No. 55-128283. Hereinafter referred to as the "prior application"). ) The surge absorbing element of the earlier application is as shown in Figure 2.
Electrodes 16 with lead wires 15 are provided at both ends of a ceramic element 14 in which a conductive film 13 having micro-gap insulation grooves 12 is formed on the surface of a ceramic insulator 11, and this is placed in an insulating exterior body 17 and then Both ends are attached by heat fusion or the like.
第２図に示すようなマイクロギヤツプ式サージ
吸収素子は、放電遅れや明暗による特性の違いも
なく、絶縁抵抗値も大きい等の優れた特性を有し
ている。 The micro-gap type surge absorbing element as shown in FIG. 2 has excellent characteristics such as no discharge delay, no difference in characteristics due to brightness, and high insulation resistance value.
［発明が解決しようとする問題点］
第２図に示すマイクロギヤツプ式のサージ吸収
素子は、このようにサージ電圧の吸収特性の面か
らは極めて優れているものであるにもかかわら
ず、その構造上、次のような問題点を有してい
た。[Problems to be Solved by the Invention] Although the micro-gap type surge absorption element shown in FIG. , had the following problems.
セラミツクス素子１４を外装体１７内に固定
する際、素子１４と外装体１７との位置決めが
難しく、組立て時に外装体１７の中央の軸心線
上に配置して素子１４の周囲に均等に空間１８
を設けることが容易ではない。 When fixing the ceramic element 14 in the exterior body 17, it is difficult to position the element 14 and the exterior body 17, so when assembling it, it is arranged on the central axis of the exterior body 17, and the space 18 is evenly spaced around the element 14.
It is not easy to establish
外装体１７の両端は熱融着等により封着され
るのであるが、その熱融着時の熱影響の伝達を
防止するために、外装体１７の大きさをセラミ
ツクス素子１４に対してある程度大きくとり、
空間１８を設けておく必要があることから、サ
ージ吸収素子の小型化には限界がある。 Both ends of the exterior body 17 are sealed by heat fusion, etc., and in order to prevent the transmission of thermal effects during the heat fusion, the size of the exterior body 17 is set to be somewhat larger than the ceramic element 14. bird,
Since it is necessary to provide the space 18, there is a limit to miniaturization of the surge absorbing element.
［問題点を解決するための手段］
本発明は上記従来の問題点を解決し、組立作業
が容易でしかも小型化が可能なサージ吸収素子を
提供するものであつて、
柱状のセラミツクス絶縁体と、該絶縁体の外周
面及び両端面を被覆する導電性皮膜と、該絶縁体
の外周面を周回し該絶縁体を周回線状に露出させ
る線状露出部よりなり、該導電性皮膜を複数個に
分割している放電ギヤツプとしての絶縁溝と、か
らなるセラミツクス素子；内部に該セラミツクス
素子が同軸的に配置されている筒状の外装体であ
つて、該外装体の内周面と該セラミツクス素子の
外面とが離隔されている絶縁性外装体；及び該外
装体の筒軸方向両端側にそれぞれ内嵌されてお
り、その内面に対し前記セラミツクス素子の端面
が当接された円盤形の電極；を備えてなり、前記
セラミツクス素子は、その外径が両端部において
は外装体の内径とほぼ等しいと共に中央部ではそ
れよりも小さい形状を有していることを特徴とす
る円筒型サージ吸収素子、
を要旨とするものである。[Means for Solving the Problems] The present invention solves the above-mentioned conventional problems and provides a surge absorption element that is easy to assemble and can be miniaturized. , consisting of a conductive film that covers the outer peripheral surface and both end faces of the insulator, and a linear exposed portion that goes around the outer peripheral surface of the insulator and exposes the insulator in a circular line shape, and a plurality of conductive films are formed. A ceramic element consisting of an insulating groove as a discharge gap divided into individual parts; A cylindrical exterior body in which the ceramic element is arranged coaxially, and the ceramic element is arranged coaxially with the inner circumferential surface of the exterior body. an insulating exterior body that is separated from the outer surface of the ceramic element; and a disc-shaped body that is fitted inside each end of the exterior body in the cylindrical axis direction, with the end face of the ceramic element abutting the inner surface of the body. a cylindrical surge absorber, characterized in that the ceramic element has an outer diameter approximately equal to the inner diameter of the outer casing at both ends and smaller at the center. The gist is:
［作用］
本発明のサージ吸収素子は、セラミツクス素子
の両端が外装体の内径とほぼ等しい外径とされて
いるため、セラミツクス素子を容易に外装体内に
位置決め設定することができる。また、セラミツ
クス素子の中央部は縮径されているため、放電の
ための有効空間も確保することができる。[Function] In the surge absorbing element of the present invention, since both ends of the ceramic element have an outer diameter that is approximately equal to the inner diameter of the outer case, the ceramic element can be easily positioned within the outer case. Furthermore, since the diameter of the central portion of the ceramic element is reduced, an effective space for discharge can also be secured.
しかも、円筒形の外装体の両端側に円盤形の電
極を配設してこれをセラミツクス素子の両端面に
当接させているため、外装体内に余分な空間を設
ける必要もなく、装置の小型化を図ることが可能
となる。 Moreover, because disk-shaped electrodes are arranged on both ends of the cylindrical exterior body and are brought into contact with both end surfaces of the ceramic element, there is no need to provide extra space inside the exterior body, making the device more compact. This makes it possible to achieve
［実施例］
以下、図面を参照して本発明の円筒型サージ吸
収素子の実施例について説明する。[Example] Hereinafter, an example of the cylindrical surge absorbing element of the present invention will be described with reference to the drawings.
第１図は本発明の円筒型サージ吸収素子の一実
施例を示す断面図である。 FIG. 1 is a sectional view showing an embodiment of the cylindrical surge absorbing element of the present invention.
本実施例の円筒型サージ吸収素子１は、柱状の
セラミツクス絶縁体２の表面に、絶縁溝３を有す
る導電性皮膜４を形成してなるセラミツクス素子
５が円筒形の絶縁性外装体６に内装されており、
外装体６の筒軸方向両端側には円盤形の電極７が
セラミツクス素子５の両端面に当接して配設され
ている。導電性皮膜４は、セラミツクス絶縁体２
の外周面及び両端面を被覆するように形成され、
絶縁溝３は、セラミツクス絶縁体２の外周面を周
回して絶縁体２を周回線状に露出させる線状露出
部であり、導電性皮膜４を複数個（図では２個）
に分割する放電ギヤツプである。セラミツクス素
子５は、外装体６の内部に同軸的に配置され、外
装体６の内周面とセラミツクス素子５の外面とは
離隔されている。このセラミツクス素子５は、そ
の外径が軸心方向両端部においては外装体６の内
径とほぼ等しく、中央部はそれよりも小さい。 In the cylindrical surge absorbing element 1 of this embodiment, a ceramic element 5 formed by forming a conductive film 4 having an insulating groove 3 on the surface of a columnar ceramic insulator 2 is enclosed in a cylindrical insulating exterior body 6. has been
Disc-shaped electrodes 7 are disposed on both end sides of the exterior body 6 in the cylindrical axis direction so as to come into contact with both end surfaces of the ceramic element 5. The conductive film 4 is the ceramic insulator 2
formed to cover the outer peripheral surface and both end surfaces of the
The insulating groove 3 is a linear exposed part that goes around the outer peripheral surface of the ceramic insulator 2 and exposes the insulator 2 in a circuit line shape, and has a plurality of conductive films 4 (two in the figure).
It is a discharge gap that divides into two. The ceramic element 5 is coaxially arranged inside the exterior body 6, and the inner peripheral surface of the exterior body 6 and the outer surface of the ceramic element 5 are separated from each other. The ceramic element 5 has an outer diameter that is approximately equal to the inner diameter of the exterior body 6 at both ends in the axial direction, and smaller at the center.
以下に本発明のサージ吸収素子の各構成部材の
詳細について説明する。 The details of each component of the surge absorbing element of the present invention will be explained below.
セラミツクス絶縁体２は、電極間にサージ電圧
が印加された場合、導電性皮膜４の絶縁溝３に電
界を集中させる。絶縁体のセラミツクス材料とし
ては、例えばムライト磁器、フオルステライト磁
器、アルミナ磁器、ステアタイト磁器等が好適で
ある。 The ceramic insulator 2 concentrates the electric field in the insulating groove 3 of the conductive film 4 when a surge voltage is applied between the electrodes. Suitable ceramic materials for the insulator include, for example, mullite porcelain, forsterite porcelain, alumina porcelain, and steatite porcelain.
このようなセラミツクス絶縁体２の表面に形成
する導電性皮膜４としては、銀等の金属製皮膜、
その他導電性のセラミツクス皮膜が採用される。
導電性セラミツクスとしては、導電性金属酸化物
及び侵入型窒化物を含む導電性セラミツクスが挙
げられ、導電性金属酸化物としては、SnO2、
Nb2O3、MoO3、WO2等が好適である。一方、侵
入型窒化物としては主として遷移元素の窒化物が
これに相当し、金属原子の隙間に窒素原子が侵入
した構造であるので、微量の不純物を添加しなく
ても導電性を有するものであり、TiN、TaN等
が好適である。これらの導電性金属酸化物及び侵
入型窒化物はいずれも融点が高く、耐酸化性、耐
食性に優れている。 The conductive film 4 formed on the surface of such a ceramic insulator 2 may be a metal film such as silver,
Other conductive ceramic films are used.
Examples of conductive ceramics include conductive ceramics containing conductive metal oxides and interstitial nitrides, and examples of conductive metal oxides include SnO 2 ,
Nb 2 O 3 , MoO 3 , WO 2 and the like are suitable. On the other hand, interstitial nitrides mainly correspond to nitrides of transition elements, which have a structure in which nitrogen atoms penetrate into the gaps between metal atoms, so they have conductivity even without the addition of trace amounts of impurities. Yes, TiN, TaN, etc. are suitable. Both of these conductive metal oxides and interstitial nitrides have high melting points and are excellent in oxidation resistance and corrosion resistance.
絶縁体２の表面にこれら導電性皮膜４を形成す
るには、めつき、スパツタリングあるいはイオン
プレーテイング等の気相蒸着法が有利である。 In order to form these conductive films 4 on the surface of the insulator 2, a vapor phase deposition method such as plating, sputtering or ion plating is advantageous.
このような導電性皮膜４に設ける絶縁溝３は、
放電遅れを低減するためには細い方が好ましい
が、狭すぎると放電の際の融着による短絡の恐れ
がある。 The insulating groove 3 provided in such a conductive film 4 is
In order to reduce the discharge delay, it is preferable that the wire be thin, but if it is too narrow, there is a risk of a short circuit due to fusion during discharge.
なお、第１図においては、溝３を１本設けた例
が示されているが、溝３はサージ吸収素子の用途
等に応じて２本以上の複数本としても良い。 Although FIG. 1 shows an example in which one groove 3 is provided, the number of grooves 3 may be two or more depending on the purpose of the surge absorbing element.
絶縁溝３は通常レーザー加工により形成され、
レーザーとしては、YAGレーザー等の固体レー
ザー、アルゴンガスレーザー等のガスレーザーが
使用される。特にYAGレーザーは安定性が高く
好適である。 The insulation groove 3 is usually formed by laser processing,
As the laser, a solid laser such as a YAG laser or a gas laser such as an argon gas laser is used. In particular, YAG laser is highly stable and suitable.
本発明において、セラミツクス素子５は、その
両端部においては外装体６の内径とほぼ等しい外
径とされ、中央部ではそれよりも細くなつてい
る。なお、本実施例では、両端から中心に向けて
その外径は次第に縮径するような形状とされてい
る。 In the present invention, the ceramic element 5 has an outer diameter approximately equal to the inner diameter of the exterior body 6 at both ends, and is thinner at the center. In this embodiment, the outer diameter is gradually reduced from both ends toward the center.
セラミツクス素子５がこのような形状を有する
ことから、セラミツクス素子５は外装体内で容易
に位置決めすることができ、しかも放電に必要な
空間１０を十分に確保し、サージ耐量等の電気的
特性を向上させることができる。 Since the ceramic element 5 has such a shape, the ceramic element 5 can be easily positioned within the exterior body, and also secures a sufficient space 10 necessary for discharge, improving electrical characteristics such as surge resistance. can be done.
本発明において、セラミツクス素子５の両端面
は、円盤形の電極７と当接させる際、その当接面
積を十分に確保するために、電極７の円盤面とほ
ぼ等しい円形平面とするのが好ましい。 In the present invention, both end surfaces of the ceramic element 5 are preferably circular planes approximately equal to the disk surface of the electrode 7 in order to ensure a sufficient contact area when brought into contact with the disk-shaped electrode 7. .
なお、本発明のサージ吸収素子１は、外装体６
にセラミツクス素子５を挿入して電極７で封入す
るものであるので、外装体６と電極７とは熱膨張
差の少ない材質を選定することが好ましい。 Note that the surge absorbing element 1 of the present invention has an exterior body 6
Since the ceramic element 5 is inserted into the housing and sealed with the electrode 7, it is preferable to select materials for the exterior body 6 and the electrode 7 that have a small difference in thermal expansion.
外装体６としては通常ガラス等の絶縁性物質が
採用される。電極７としては、ジユメツト、コバ
ール等が用いられる。 The exterior body 6 is usually made of an insulating material such as glass. As the electrode 7, diamond, Kovar, etc. are used.
本発明のサージ吸収素子１はセラミツクス素子
５を円筒状の外装体６に挿入し、外装体６の両端
に円盤形の電極７をセラミツクス素子５の両端面
に当接するように嵌め込んで封入することによ
り、セラミツクス素子を外装体内に位置決めする
に際し、煩雑な操作を要することなく容易に組立
てることができる。 In the surge absorbing element 1 of the present invention, a ceramic element 5 is inserted into a cylindrical exterior body 6, and disk-shaped electrodes 7 are fitted and sealed at both ends of the exterior body 6 so as to come into contact with both end surfaces of the ceramic element 5. As a result, the ceramic element can be easily assembled without requiring any complicated operations when positioning the ceramic element within the exterior body.
なお、この場合、封入ガスとしては、希ガス及
び窒素ガスよりなる群の中から選ばれた少なくと
も一種のガスを使用する。封入ガスの圧力につい
ては特に限定されないが、減圧であることが好適
である。 In this case, at least one gas selected from the group consisting of rare gas and nitrogen gas is used as the filler gas. The pressure of the sealed gas is not particularly limited, but it is preferably reduced pressure.
第１図においては、電極７にリード線を設けて
いないサージ吸収素子について示したが、本発明
のサージ吸収素子は電極７にリード線を接続した
タイプのものであつても良い。しかしながら、リ
ード線を接続したものでは、
リード線の浮遊容量による高周波信号の歪を
生じる。 Although FIG. 1 shows a surge absorbing element in which the electrode 7 is not provided with a lead wire, the surge absorbing element of the present invention may be of a type in which the electrode 7 is connected to a lead wire. However, when lead wires are connected, high-frequency signal distortion occurs due to the stray capacitance of the lead wires.
リード線によつて他の電子部品との空間的配
置に制限を受ける。また基板等への装着が困難
であり装着機構も複雑である。 The lead wires limit the spatial arrangement with other electronic components. Furthermore, it is difficult to attach it to a substrate, etc., and the attachment mechanism is also complicated.
リード線の部分が長く、小型化に限界があり
材料費等のコスト低減が難しい。 The lead wire portion is long, which limits miniaturization, making it difficult to reduce costs such as material costs.
等の問題を生じることがあることから、リード線
を設けない形式とするのが有利である。Since problems such as the following may occur, it is advantageous to use a type without lead wires.
［発明の効果］
以上詳述した通り、本発明の円筒型サージ吸収
素子は、柱状のセラミツクス絶縁体と、該絶縁体
の外周面及び両端面を被覆する導電性皮膜と、該
絶縁体の外周面を周回し該絶縁体を周回線状に露
出させる線状露出部よりなり、該導電性皮膜を複
数個に分割している放電ギヤツプとしての絶縁溝
と、からなるセラミツクス素子；内部に該セラミ
ツクス素子が同軸的に配置されている筒状の外装
体であつて、該外装体の内周面と該セラミツクス
素子の外面とが離隔されている絶縁性外装体；及
び該外装体の筒軸方向両端側にそれぞれ内嵌され
ており、その内面に対し前記セラミツクス素子の
端面が当接された円盤形の電極；を備えてなり、
前記セラミツクス素子は、その外径が両端部にお
いては外装体の内径とほぼ等しいと共に中央部で
はそれよりも小さい形状を有しているものであつ
て、マイクロギヤツプ式サージ吸収素子の著しく
優れたサージ吸収特性を具備する上に、構成部材
の組立が容易でしかも小型化を図ることができる
という特徴を有する。[Effects of the Invention] As detailed above, the cylindrical surge absorbing element of the present invention includes a columnar ceramic insulator, a conductive film covering the outer peripheral surface and both end surfaces of the insulator, and an outer periphery of the insulator. A ceramic element consisting of a linear exposed part that goes around the surface and exposes the insulator in a circular line shape, and an insulating groove as a discharge gap that divides the conductive film into a plurality of parts; a cylindrical exterior body in which elements are arranged coaxially, and an insulating exterior body in which the inner peripheral surface of the exterior body and the outer surface of the ceramic element are separated; and the cylindrical axis direction of the exterior body; Disc-shaped electrodes are fitted inside each end, and the end surfaces of the ceramic element are in contact with the inner surfaces of the disc-shaped electrodes;
The ceramic element has an outer diameter that is almost equal to the inner diameter of the outer casing at both ends and is smaller at the center, and has a micro-gap type surge absorption element with extremely excellent surge absorption. In addition to these characteristics, it also has the characteristics that the components can be easily assembled and miniaturized.
従つて、このような本発明の円筒型サージ吸収
素子は各種設備のサージ電圧吸収機構として工業
的に極めて有用である。 Therefore, the cylindrical surge absorbing element of the present invention is industrially extremely useful as a surge voltage absorbing mechanism for various types of equipment.
第１図は本発明の円筒型サージ吸収素子の一実
施例を示す断面図、第２図は従来のサージ吸収素
子の断面図である。
１……サージ吸収素子、２……絶縁体、３……
絶縁溝、４……導電性皮膜、５……セラミツクス
素子、６……外装体、７……電極。
FIG. 1 is a cross-sectional view showing an embodiment of the cylindrical surge absorbing element of the present invention, and FIG. 2 is a cross-sectional view of a conventional surge absorbing element. 1... Surge absorption element, 2... Insulator, 3...
Insulating groove, 4... Conductive film, 5... Ceramic element, 6... Exterior body, 7... Electrode.
Claims (1)
皮膜と、 該絶縁体の外周面を周回し該絶縁体を周回線状
に露出させる線状露出部よりなり、該導電性皮膜
を複数個に分割している放電ギヤツプとしての絶
縁溝と、 からなるセラミツクス素子； 内部に該セラミツクス素子が同軸的に配置され
ている筒状の外装体であつて、該外装体の内周面
と該セラミツクス素子の外面とが離隔されている
絶縁性外装体；及び 該外装体の筒軸方向両端側にそれぞれ内嵌され
ており、その内面に対し前記セラミツクス素子の
端面が当接された円盤形の電極； を備えてなり、前記セラミツクス素子は、その外
径が両端部においては外装体の内径とほぼ等しい
と共に中央部ではそれよりも小さい形状を有して
いることを特徴とする円筒型サージ吸収素子。[Scope of Claims] 1. A columnar ceramic insulator, a conductive film that covers the outer peripheral surface and both end surfaces of the insulator, and a conductive film that goes around the outer peripheral surface of the insulator and exposes the insulator in the form of a circuit line. a ceramic element consisting of an insulating groove as a discharge gap, which is made up of a linear exposed part and divides the conductive film into a plurality of parts; a cylindrical exterior body in which the ceramic element is coaxially arranged; an insulating exterior body in which the inner circumferential surface of the exterior body and the outer surface of the ceramic element are separated from each other; a disc-shaped electrode in contact with the end face of the ceramic element; the ceramic element has a shape in which the outer diameter is approximately equal to the inner diameter of the exterior body at both ends and smaller than the inner diameter at the center part; A cylindrical surge absorption element comprising:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11212186A JPS62268106A (en) | 1986-05-16 | 1986-05-16 | Cylindrical surge absorber |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11212186A JPS62268106A (en) | 1986-05-16 | 1986-05-16 | Cylindrical surge absorber |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62268106A JPS62268106A (en) | 1987-11-20 |
| JPH054795B2 true JPH054795B2 (en) | 1993-01-20 |
Family
ID=14578711
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11212186A Granted JPS62268106A (en) | 1986-05-16 | 1986-05-16 | Cylindrical surge absorber |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62268106A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010192322A (en) * | 2009-02-19 | 2010-09-02 | Mitsubishi Materials Corp | Surge absorber, and manufacturing method thereof |
| JP5305011B2 (en) * | 2009-02-21 | 2013-10-02 | 三菱マテリアル株式会社 | Surge absorber and manufacturing method thereof |
| CN103069671A (en) * | 2010-08-10 | 2013-04-24 | 三菱综合材料株式会社 | Surge absorber and method for manufacturing same |
-
1986
- 1986-05-16 JP JP11212186A patent/JPS62268106A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62268106A (en) | 1987-11-20 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |