JPH0614525B2 - Semiconductor device manufacturing method and manufacturing apparatus thereof - Google Patents

Semiconductor device manufacturing method and manufacturing apparatus thereof

Info

Publication number
JPH0614525B2
JPH0614525B2 JP57217411A JP21741182A JPH0614525B2 JP H0614525 B2 JPH0614525 B2 JP H0614525B2 JP 57217411 A JP57217411 A JP 57217411A JP 21741182 A JP21741182 A JP 21741182A JP H0614525 B2 JPH0614525 B2 JP H0614525B2
Authority
JP
Japan
Prior art keywords
brazing material
pellet
wire
mounting base
frame
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57217411A
Other languages
Japanese (ja)
Other versions
JPS59106124A (en
Inventor
博之 馬場
宰 服部
和夫 井上
正志 米山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP57217411A priority Critical patent/JPH0614525B2/en
Publication of JPS59106124A publication Critical patent/JPS59106124A/en
Publication of JPH0614525B2 publication Critical patent/JPH0614525B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/27—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/741—Apparatus for manufacturing means for bonding, e.g. connectors
    • H01L24/743—Apparatus for manufacturing layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/75—Apparatus for connecting with bump connectors or layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
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    • H01L2224/741—Apparatus for manufacturing means for bonding, e.g. connectors
    • H01L2224/743—Apparatus for manufacturing layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/781—Means for controlling the bonding environment, e.g. valves, vacuum pumps
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78343—Means for applying energy, e.g. heating means by means of pressure by ultrasonic vibrations
    • H01L2224/78344—Eccentric cams
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    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/786—Means for supplying the connector to be connected in the bonding apparatus
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/851—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector the connector being supplied to the parts to be connected in the bonding apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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    • H01L2924/01—Chemical elements
    • H01L2924/01007—Nitrogen [N]
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    • H01L2924/01—Chemical elements
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    • H01L2924/078—Adhesive characteristics other than chemical
    • H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor

Abstract

PURPOSE:To improve compatibility between a brazing material and a pellet disposing base and permit a semiconductor pellet to be reliably mounted on the base with high degree of adhesion, by controlling the supply of the brazing material such that only a predetermined amount of the material is supplied to the pellet disposing base heated above the melting point of the brazing material. CONSTITUTION:N2 gas, for example, is supplied into a transfer path 12 to produce a non-oxidizing or reducing atmosphere. The path 12 is heated to a predetermined temperature by means of a heat source 14. Then, a frame feeder 25 is driven. Consequently, a frame 11 which is fed into the transfer path 12 by means of a feed pin 17 fitted in a feed hole 11a is guided to a brazing material mounting part at a predetermined feed pitch, and a positioning pin 21 is fitted into a positioning hole 22 to fix the frame 11 at a predetermined position. When a predetermined amount of a wire-shaped brazing material 19 has been mounted on a pellet disposing base 11b by means of a brazing material supply mechanism 30, a capillary tool 20 is separated from the pellet disposing base 11b by the brazing material supply mechanism 30. Thereafter, a semiconductor pellet is pressed upon the pellet disposing base 11b through the predetermined amount of the brazing material 19 by means of, for example, a vacuum holding jig, thereby to obtain a semiconductor device.

Description

【発明の詳細な説明】 〔発明の技術分野〕 本発明は、半導体装置の製造方法及びその製造装置に関
する。TECHNICAL FIELD OF THE INVENTION The present invention relates to a method of manufacturing a semiconductor device and a manufacturing apparatus thereof.

〔発明の技術的背景及びその問題点〕[Technical background of the invention and its problems]

半導体ペレットを銅等からなるフレームのペレット配設
床に装着する手段として、Ａｕプリフォームを使用す
る所謂AuSi共晶マウント方式、半導体ペレットの裏面
側に厚さ1.5〜2.5μのAuGe層を形成して直接半導体ペレ
ットをペレット配設床に装着するAu Foilloss マウント
方式、半田マウント方式がある。The so-called AuSi eutectic mounting method using an Au preform is used as a means for mounting the semiconductor pellets on the pellet mounting floor of a frame made of copper, etc., and an AuGe layer with a thickness of 1.5 to 2.5μ is formed on the back side of the semiconductor pellets. There are Au Foilloss mounting method and solder mounting method in which semiconductor pellets are directly mounted on the floor where pellets are placed.

のAuSi共晶マウント方式によるものでは、厚さが約１
５μまでのAuプリフォームを半導体ペレットよりも大き
い大きさにして使用するため、極めて経済性が悪い。ま
た、マウント後の熱衝撃試験によって半導体ペレットに
クラックが発生し易い。のAu Foilloss マウント方式
によるものでは、ペレットサイズが約１mm□以下になる
と、半田マウント方式に比べて経済性の点で優れてい
る。しかし、マウント後に施す半田浸加熱試験等の熱衝
撃によって、半導体ペレットにクラックが発生し易い。
また、半導体ペレットの裏面に形成したAuGe層によりペ
レット配設基台に装着するため、ペレット配設基台に対
して高い平行度で半導体ペレットを導くことが極めて難
しい。の半田マウント方式によるものでは、半導体ペ
レットが0.39〜２mm□の微少なものである時は、銅で形
成されたペレット配設床の場合には、ろう材のぬれ性が
悪いため、安定した操作で確実に半導体ペレットを装着
できない。With the AuSi eutectic mounting method, the thickness is about 1
Since the Au preform of up to 5μ is used in a size larger than the semiconductor pellet, it is extremely economical. In addition, a crack is likely to occur in the semiconductor pellet due to the thermal shock test after mounting. With the Au Foilloss mounting method, the pellet size of about 1 mm □ or less is more economical than the solder mounting method. However, the semiconductor pellet is apt to crack due to thermal shock such as a solder immersion heating test performed after mounting.
Further, since the AuGe layer formed on the back surface of the semiconductor pellet is mounted on the pellet mounting base, it is extremely difficult to guide the semiconductor pellet with high parallelism to the pellet mounting base. With the solder mount method of No. 3, when the semiconductor pellets are very small, 0.39 to 2 mm □ , in the case of a floor with a pellet made of copper, the solder material has poor wettability, so stable operation is possible. It is not possible to securely mount the semiconductor pellets.

しかしながら、このような方式の中では、半導体ペレッ
トの大きさに応じた微少量の半田をペレット配設基台上
に供給できるならば、マウント後の性能試験によっても
クラックが発生し難い点で半田マウント方式が好まし
い。このため、次のようにして微少量のろう材をペレッ
ト配設基台上に載置する試みがなされている。第１図
(A)及び同図(B)は、リボン状のろう材１を所定長さのと
ころで切断して、これをペレット配設基台２上に吸着治
具を用いて載置するものである。第２図(A)及び同図(B)
は、円板状のろう材３を前述と同様に吸着治具を用いて
ペレット配設基台２上に載置するものである。このよう
な手段によるものでは、ろう材１，３の表面に形成され
た酸化膜が半導体ペレット５との間、或はペレット配設
基台２との間に残存するため、半導体ペレット５を装着
する際にろう材１，３が半導体ペレット５及びペレット
配設基台２に十分になじまず、半導体ペレット５を確実
に装着できない。また、半導体ぺレット５及びペレット
配設基台２とろう材１，３との界面に空洞部を形成し易
いため熱抵抗が大きくなる。更に、ろう材１の切断部に
ばり１ａが形成されていると、第３図に示す如く、ろう
材１とペレット配設基台２との隙間１ｂに空気が侵入
し、ボイドの発生原因となる。また、吸着治具を用いて
ろう材１，３をペレット配設基台２上に導くため、第４
図に示す如く、載置したろう材１，３の中央部が山形に
盛り上がりその直下に隙間１ｃができて、ボイド発生の
原因となる。このような問題を解消するため、第５図
(A)及び同図(B)に示す如く、ワイヤ状のろう材６を所定
長に切断すると同時にこれをペレット配設基台２上に載
置するか、或は熱圧着によりペレット配設基台２上に載
置する試みがなされている。このような手段によるもの
では、吸着治具を用いるものに比べてボイドの発生を少
なくできるが、ろう材６の表面に形成された酸化膜に起
因する装着不良等の問題は、依然解決できなかった。However, in such a method, if a small amount of solder corresponding to the size of the semiconductor pellet can be supplied on the pellet mounting base, cracks are less likely to occur even after the performance test after mounting. The mounting method is preferable. For this reason, an attempt has been made to mount a small amount of brazing material on the pellet mounting base as follows. Fig. 1
(A) and (B) of the figure show that the ribbon-shaped brazing material 1 is cut at a predetermined length and placed on the pellet mounting base 2 using a suction jig. 2 (A) and 2 (B)
In the above, the disc-shaped brazing material 3 is placed on the pellet mounting base 2 by using a suction jig as described above. With such means, the oxide film formed on the surfaces of the brazing filler metals 1 and 3 remains between the semiconductor pellet 5 and the pellet mounting base 2, and therefore the semiconductor pellet 5 is mounted. At this time, the brazing filler metals 1 and 3 do not sufficiently fit the semiconductor pellet 5 and the pellet mounting base 2, and the semiconductor pellet 5 cannot be reliably mounted. Further, since a cavity is easily formed at the interface between the semiconductor pellet 5 and the pellet mounting base 2 and the brazing materials 1 and 3, the thermal resistance is increased. Further, when the flash 1a is formed at the cut portion of the brazing filler metal 1, air enters the gap 1b between the brazing filler metal 1 and the pellet mounting base 2 as shown in FIG. Become. Further, since the brazing filler metals 1 and 3 are guided onto the pellet mounting base 2 by using the suction jig,
As shown in the figure, the central portions of the placed brazing filler metals 1 and 3 rise up in a mountain shape, and a gap 1c is formed immediately below them, which causes a void to occur. In order to solve such a problem, FIG.
As shown in (A) and (B) of the figure, the wire-shaped brazing material 6 is cut into a predetermined length and at the same time placed on the pellet mounting base 2 or by thermocompression bonding. Attempts have been made to place it on the table 2. With such a means, it is possible to reduce the generation of voids as compared with the case where an adsorption jig is used, but the problems such as mounting failure due to the oxide film formed on the surface of the brazing material 6 cannot be solved yet. It was

〔発明の目的〕[Object of the Invention]

本発明は、ろう材とペレット配設基台とのなじみ性を向
上すると共に、ろう材中に巣が発生するのを防止し、か
つ、高い密着度で確実にしかも容易に半導体ペレットを
ペレット配設基台に装着することができる半導体装置の
製造方法及びその製造装置を提供することをその目的と
するものである。The present invention improves the compatibility between the brazing filler metal and the pellet mounting base, prevents the formation of cavities in the brazing filler metal, and ensures reliable and easy semiconductor pellet placement with high adhesion. It is an object of the present invention to provide a method of manufacturing a semiconductor device that can be mounted on a base and a manufacturing apparatus thereof.

〔発明の概要〕[Outline of Invention]

本発明に係る半導体装置の製造方法は、非酸化性雰囲気
または還元性雰囲気中でワイヤ状のろう材をその融点以
上に加熱されたペレット配設基台上に所定量だけ制御し
ながら供給する工程を設けて、ろう材とペレット配設基
台とのなじみ性を向上すると共に、ろう材中に巣が発生
するのを防止し、かつ、高い密着度で確実にしかも容易
に半導体ペレットをペレット配設基台に装着できるよう
にしたものである。A method for manufacturing a semiconductor device according to the present invention is a step of supplying a wire-shaped brazing filler metal in a non-oxidizing atmosphere or a reducing atmosphere while controlling a predetermined amount on a pellet-arranged base heated above its melting point. To improve the compatibility between the brazing filler metal and the pellet mounting base, prevent the formation of cavities in the brazing filler metal, and ensure that the semiconductor pellets can be reliably and easily pelletized with high adhesion. It is designed to be mounted on the base.

本発明に係る半導体装置の製造装置は、ペレット配設基
台を有するリードフレームをろう材取付部に所定のピッ
チで供給するフレームフィーダと、ペレット配設基台を
ろう材の融点以上に加熱する手段と、ペレット配設基台
にワイヤ状のろう材を所定の微量分だけ制御すると共
に、ろう材をペレット配設基台上に付勢押圧しながら押
付けるように供給する機構とを設けて、ろう材とペレッ
ト配設基台とのなじみ性を向上すると共に、ろう材中に
巣が発生するのを防止し、かつ、高い密着度で確実にし
かも容易に半導体ペレットをペレット配設基台に装着で
きるようにしたものである。A semiconductor device manufacturing apparatus according to the present invention includes a frame feeder that supplies a lead frame having a pellet mounting base to a brazing material mounting portion at a predetermined pitch, and a pellet mounting base is heated above the melting point of the brazing material. A means and a mechanism for controlling the wire-shaped brazing filler metal on the pellet mounting base by a predetermined minute amount and supplying the brazing filler metal while pressing the brazing filler metal on the pellet mounting base. Improves the compatibility between the brazing filler metal and the pellet mounting base, prevents the formation of cavities in the brazing filler metal, and ensures a high degree of adhesion to ensure reliable and easy semiconductor pellet mounting base. It can be attached to.

〔発明の実施例〕Example of Invention

以下、本発明の実施例について図面を参照して説明す
る。第６図(A)は、本発明の一実施例の横断面図、同図
(B)は、同実施例の縦断面図である。なお、本発明に係
る半導体装置の製造方法の説明は、同実施例の半導体装
置の製造装置の作用効果の説明をもってその説明とす
る。同図１０は、略トンネル形をなすハウジングであ
る。ハウジング１０の下部は開口している。ハウジング
１０内には、その長手方向に沿ってフレーム１１の移送
路１２を形成すると共に、ハウジング１０の内側面との
間に雰囲気ガスの流出路となる隙間を形成するようにし
てヒーターブロック１３が収容されている。ヒーターブ
ロック１３には、フレーム１１を加熱するための熱源１
４として例えばカートリッジヒータガ内蔵されている。
ヒーターブロック13内には、その長手方向に沿って雰囲
気ガス供給路１５が形成されている。雰囲気ガス供給路
１５には、その長手方向に沿って所定時間隔を置いて端
末供給路１５ａが分岐している。端末供給路１５ａは移
送路１２に連通している。雰囲気ガス供給路15は、ハウ
ジング１０の側壁部を貫挿して内部に導入された雰囲気
ガス供給管１６に接続されている。ハウジング１０内に
は、フレーム１１を移送するフレームフィーダ２５に設
けられた送りピン１７が、フレーム１１の送り孔１１ａ
に出入するように上下動自在に設けられている。ハウジ
ング１０の上壁部の所定領域には、移送路１２に連通す
る窓１８が開口されている。窓１８の直下のハウジング
１０内の領域は、ろう材取付部になっている。窓１８の
上方には、ろう材取付部に移送路１２から供給されたフ
レーム１１のペレット配設基台１１ｂ上に、ワイヤ状ろ
う材１９を導くためのキャピラリーツール２０が昇降自
在に設けられている。この窓１８の近傍のハウジング１
０の部分には、位置決めピン２１を出入するための位置
決め孔２２が開口されている。位置決めピン２１は、こ
の位置決め孔２２を介してろう材取付部内に出入し、フ
レーム１１に形成された固定孔１１ｃに嵌入するように
なっている。Hereinafter, embodiments of the present invention will be described with reference to the drawings. FIG. 6 (A) is a cross-sectional view of the embodiment of the present invention.
(B) is a longitudinal sectional view of the embodiment. The description of the method of manufacturing a semiconductor device according to the present invention will be made by explaining the operation and effect of the semiconductor device manufacturing apparatus of the embodiment. FIG. 10 shows a substantially tunnel-shaped housing. The lower part of the housing 10 is open. In the housing 10, a transfer path 12 of the frame 11 is formed along the longitudinal direction of the housing 10, and a heater block 13 is formed so as to form a gap serving as an outflow path of atmospheric gas between the transfer path 12 and the inner surface of the housing 10. It is housed. The heater block 13 includes a heat source 1 for heating the frame 11.
4, a cartridge heater is built in, for example.
An atmosphere gas supply path 15 is formed in the heater block 13 along the longitudinal direction thereof. A terminal supply passage 15a is branched from the atmospheric gas supply passage 15 at a predetermined time interval along the longitudinal direction thereof. The terminal supply path 15a communicates with the transfer path 12. The atmospheric gas supply passage 15 is connected to an atmospheric gas supply pipe 16 which is inserted through the side wall portion of the housing 10 and introduced therein. Inside the housing 10, a feed pin 17 provided on a frame feeder 25 for transferring the frame 11 is provided with a feed hole 11 a of the frame 11.
It is provided to move up and down so that it can move in and out. A window 18 communicating with the transfer path 12 is opened in a predetermined region of the upper wall portion of the housing 10. An area inside the housing 10 immediately below the window 18 is a brazing material mounting portion. Above the window 18, a capillary tool 20 for guiding the wire-shaped brazing material 19 is provided so as to be vertically movable on the pellet disposition base 11b of the frame 11 supplied to the brazing material mounting portion from the transfer path 12. There is. Housing 1 near this window 18
A positioning hole 22 for inserting / removing the positioning pin 21 is opened in the portion 0. The positioning pin 21 is adapted to move in and out of the brazing material mounting portion through the positioning hole 22 and fit into the fixing hole 11c formed in the frame 11.

キャピラリーツール２０は、第７図に示すろう材供給機
構３０に接続されている。キャピラリーツール２０は、
下レバー３１の先端部に保持されている。下レバー３１
の先端部には、ワイヤ状ろう材１９の押え部材３２が取
付けられている。下レバー３１は、その略中央部を支点
にしてろう材供給機構３０の本体３３に揺動自在に支持
されている。下レバー３１の後端部は、揺動レバー３４
にて把持されている。揺動レバー３４は、その略中央部
にて本体３３に揺動自在に支持されている。揺動レバー
３４の後端部には、カム３５が当接している。カム３５
はベルト３６を介してモータ３７に接続されている。こ
のモータ３７の駆動によってカム３５が回転し、これに
連動して揺動レバー３４、下レバー３１が揺動してキャ
ピラリーツール２０が昇降動するようになっている。下
レバー３１の上方には、上レバー３８が対設されてい
る。上レバー３８は、その後端部の近傍に支点を設けて
本体３３に揺動自在に支持されている。上レバー３８の
先端部には、ワイヤ状ろう材１９の押え部材３９と案内
部材４０が取付けられている。上レバー３８の後端部の
上方には、これに対向してマイクロメータ４１の先端部
が出入自在に設けられている。上レバー３８と下レバー
３１は、夫々の支点と先端部間の所定位置にばね部材４
２を介在している。本体３３の上部には、ワイヤ状ろう
材１９を巻き取ったスプール４３が設けられている。ス
プール４３から巻き解されたワイヤ状ろう材１９は、上
レバー３８の案内部材４０、押え部材３９を貫挿し、下
レバー３１の押え部材３２を貫挿してキャピラリーツー
ル１９の先端部から外部に導出されている。The capillary tool 20 is connected to the brazing material supply mechanism 30 shown in FIG. The capillary tool 20
It is held at the tip of the lower lever 31. Lower lever 31
A pressing member 32 for the wire-shaped brazing material 19 is attached to the tip of the. The lower lever 31 is swingably supported by the main body 33 of the brazing material supply mechanism 30 with its substantially central portion as a fulcrum. The rear end of the lower lever 31 is provided with a swing lever 34.
Is being held at. The swing lever 34 is swingably supported by the main body 33 at a substantially central portion thereof. A cam 35 is in contact with the rear end of the swing lever 34. Cam 35
Is connected to a motor 37 via a belt 36. The driving of the motor 37 causes the cam 35 to rotate, and in conjunction with this, the swing lever 34 and the lower lever 31 swing so that the capillary tool 20 moves up and down. An upper lever 38 is provided opposite to the lower lever 31. The upper lever 38 is swingably supported by the main body 33 with a fulcrum provided near the rear end thereof. A pressing member 39 for the wire-shaped brazing material 19 and a guide member 40 are attached to the tip of the upper lever 38. A front end portion of a micrometer 41 is provided above the rear end portion of the upper lever 38 so as to face the rear end portion of the upper lever 38 so that the micrometer 41 can move in and out. The upper lever 38 and the lower lever 31 are located at predetermined positions between their respective fulcrums and their tip ends.
There are two intervening. A spool 43 around which the wire-shaped brazing material 19 is wound is provided on the upper portion of the main body 33. The wire-shaped brazing material 19 unwound from the spool 43 is inserted through the guide member 40 and the pressing member 39 of the upper lever 38 and through the pressing member 32 of the lower lever 31 and is led out from the tip end portion of the capillary tool 19. Has been done.

ワイヤー状ろう材１９としては、例えば融点が１８３〜
３１０℃の範囲のPb−５％Sn、Pb-10%Sn、Pb-15%Sn、Pb
-63%Sn等の所謂Pb-Sn系半田や、融点が２００〜２５０
℃の範囲のSn-3.5%Ag、Sn-10%Au、Su-In、Sn-3.5%Sb、S
n-10%Sb等の所謂Sn系半田、或は、融点が約３００℃のP
b-Sn-Ag系半田、融点が１８０〜２００℃のPb-In半田等
を使用する。また、ワイヤー状ろう材19の断面形状は、
円形、四角形、三角形等如何なるものを使用しても良
い。ワイヤー状ろう材19の径は、装着する半導体ペレッ
トの大きさに応じて設定する。例えば0.1φ，0.3φ，0.
5φ，1.0φのワイヤー状ろう材１９を使用する。なお、
キャピラリーツール２０、ろう材供給機構３０、フレー
ムフィーダ２５、位置決めピン２１は、図示しない駆動
部によって連動するようになっている。The wire-shaped brazing material 19 has, for example, a melting point of 183 to
Pb-5% Sn, Pb-10% Sn, Pb-15% Sn, Pb in the range of 310 ° C
-63% Sn or other so-called Pb-Sn based solder, melting point 200-250
℃ range Sn-3.5% Ag, Sn-10% Au, Su-In, Sn-3.5% Sb, S
So-called Sn-based solder such as n-10% Sb, or P with a melting point of about 300 ° C
b-Sn-Ag solder, Pb-In solder having a melting point of 180 to 200 ° C., or the like is used. The cross-sectional shape of the wire-shaped brazing material 19 is
Any shape such as a circle, a quadrangle, and a triangle may be used. The diameter of the wire-shaped brazing material 19 is set according to the size of the semiconductor pellets to be mounted. For example, 0.1φ, 0.3φ, 0.
The wire-shaped brazing material 19 of 5φ and 1.0φ is used. In addition,
The capillary tool 20, the brazing material supply mechanism 30, the frame feeder 25, and the positioning pin 21 are interlocked by a driving unit (not shown).

而して、このように構成された半導体装置の製造装置７
０によれば、次のようにしてフレーム１１に形成された
ペレット配設基台１１ｂに所定量のワイヤー状ろう材１
９を載置し、半導体ペレットの装着が行われる。Thus, the semiconductor device manufacturing apparatus 7 thus configured
According to No. 0, a predetermined amount of the wire-shaped brazing material 1 is attached to the pellet mounting base 11b formed on the frame 11 as follows.
9 is placed, and the semiconductor pellets are mounted.

先ず、雰囲気ガス供給管１６から雰囲気ガス供給路１
５、端末供給路１５ａを経て移送路12内に、Ｎ2ガス或
はＨ2を数％含んだＮ2ガスやArガスを供給し、非酸化性
或は還元性の雰囲気を作る。次いで、カートリッジヒー
タ等からなる熱源１４にて移送路１２内を所定温度まで
加熱する。加熱温度は、ペレット配設基台１１ｂ上に載
置するワイヤー状ろう材１９を形成する半田の融点を考
慮して、次の操作で供給されるフレーム１１のペレット
配設基台１１ｂ上の温度がワイヤー状ろう材１９の融点
よりも３０℃程度高くなるように設定する。First, from the atmospheric gas supply pipe 16 to the atmospheric gas supply path 1
5, the transfer path 12 through the terminal supply passage 15a, to supply N 2 gas or a few% inclusive N 2 gas or Ar gas H 2, making non-oxidizing or reducing atmosphere. Next, the inside of the transfer path 12 is heated to a predetermined temperature by the heat source 14 including a cartridge heater. The heating temperature is the temperature on the pellet placement base 11b of the frame 11 supplied in the next operation, in consideration of the melting point of the solder forming the wire-shaped brazing material 19 placed on the pellet placement base 11b. Is set to be about 30 ° C. higher than the melting point of the wire-shaped brazing material 19.

次いで、フレームフィーダ２５を駆動し、送りピン１７
をフレーム１１の送り孔１１ａに嵌入してフレーム１１
を移送路１２内に供給する。フレーム１１は、所定の送
りピッチでろう材取付部に供給される。フレーム１１が
ろう材取付部に導かれると、位置決めピン２１がフレー
ム１１の位置決め孔２２内に嵌入し、フレーム11はろう
材取付部の所定位置で固定される。このとき、ペレット
配設基台１１ｂは、後述の操作にてここに載置するワイ
ヤー状ろう材１９の融点よりも約３０℃高い温度に加熱
されている。例えば、ワイヤー状ろう材１９が１８３〜
３１０℃の融点を有するPb-Sn系半田の場合には、ペレ
ット配設基台１１ｂは、２００〜４５０℃に加熱され
る。Next, the frame feeder 25 is driven and the feed pin 17
Is inserted into the feed hole 11a of the frame 11 and the frame 11
Are supplied into the transfer path 12. The frame 11 is supplied to the brazing material mounting portion at a predetermined feed pitch. When the frame 11 is guided to the brazing material mounting portion, the positioning pin 21 is fitted into the positioning hole 22 of the frame 11, and the frame 11 is fixed at a predetermined position of the brazing material mounting portion. At this time, the pellet mounting base 11b is heated to a temperature higher by about 30 ° C. than the melting point of the wire-shaped brazing material 19 placed here by an operation described later. For example, the wire brazing material 19 is 183-
In the case of Pb-Sn based solder having a melting point of 310 ° C, the pellet mounting base 11b is heated to 200 to 450 ° C.

次に、ろう材供給機構３０により所定量のワイヤー状ろ
う材１９を、加熱された配設基台１１ｂに付勢押圧しな
がら押付けて被着する。ワイヤー状ろう材１９の送り出
し操作は次のようにして行われる。第７図に示す如く、
まず、モータ３７を駆動してカム３５を回転せしめる。
カム３５の回転により揺動レバー３４の後端部が降下す
るとその支点を介して先端部が上昇し、下レバー３１の
後端部が上昇する。下レバー３１は後端部が上昇すると
支点を介して先端部が降下する。下レバー３１の先端部
が降下すると、ばね部材４２を介して上レバー３８の先
端部が引き下げられ、その支点を介して上レバー３８の
後端部が上昇する。上レバー３８の後端部の上昇量は、
これに対向して設けられたマイクロメータ４１の先端部
に後端部が当接することにより規制される。従って、第
１番目のフレーム１１のペレット配設基台１１ｂにワイ
ヤー状ろう材１９を載置する場合には、予めマイクロメ
ータ４１と上レバー３８の後端部との間隔Ｌを大きく設
定しておく。而して、モータ３７を駆動して前述の下レ
バー31等の操作により、ワイヤー状ろう材１９をペレッ
ト配設基台１１ｂ上の近接した位置まで下降させる。次
いで、マイクロメータ４１と上レバー３８の後端部との
間隔Ｌを、ペレット配設基台１１ｂに載置するワイヤー
状ろう材１９の量に応じた値に設定する。次いで、前述
と同様にモータ３７の駆動により下レバー３１等を操作
して、キャピラリーツール２０を降下し、所定量のワイ
ヤー状ろう材１９をペレット配設基台１１ｂ上に供給す
る。ここで、キャピラリーツール２０の降下によるワイ
ヤー状ろう材１９の送り出し速度は、ペレット配設基台
１１ｂに接触して溶けて行く速度よりも遅く設定する必
要がある。従って、ペレット配設基台１１ｂの温度が低
い場合は、遅くしてペレット配設基台１１ｂの温度が高
い場合は、早くする必要がある。例えば、Pb-Sn系半田
からなる0.1φのワイヤー状ろう材１９を用いて、約0.3
mm□の半導体ペレットを装着する場合は、約２０mm／se
cの送り出し速度が好ましい。また、例えば0.1φのワイ
ヤー状ろう材１９を用いて、マイクロメータ４１と上レ
バー３８の後端部間の間隔Ｌを設定することにより送り
出し量を決定すると、この送り出し量のワイヤー状ろう
材１９を介してペレット配設基台１１ｂ上に載置可能な
半導体ペレットの大きさは、第８図に示す特性線Ｉにて
表示される。同様にワイヤー状ろう材１９の径を0.15φ
にすると同図中特性線II、径を0.2φにすると特性線III
に従ってワイヤー状ろう材19の送り出し量と装着可能な
半導体ペレットの大きさとが決定される。このようにし
て、所定量のワイヤー状ろう材１９がペレット配設基台
１１ｂ上に載置されると、ろう材供給機構３０によって
キャピラーツール２０をペレット配設基台１１ｂから離
間する。然る後、周知のコレットと称られる吸着治具等
により、ペレット配設基台１１ｂ上に所定量のワイヤー
状ろう材１９を介して半導体ペレットを押着し、半導体
装置を得る。得られた半導体装置は、フレームフィーダ
２５によるフレーム１１の移送によって次工程へと導か
れる。このフレーム１１の移送操作に同期して、前述の
ワイヤー状ろう材19の載置、半導体ペレットの押着等の
操作が連続的に行われる。Next, a predetermined amount of the wire-shaped brazing material 19 is pressed against the heated mounting base 11b by the brazing material supply mechanism 30 while being pressed and deposited. The feeding operation of the wire-shaped brazing material 19 is performed as follows. As shown in FIG.
First, the motor 37 is driven to rotate the cam 35.
When the rear end of the swing lever 34 is lowered by the rotation of the cam 35, the front end is raised via the fulcrum, and the rear end of the lower lever 31 is raised. When the rear end portion of the lower lever 31 rises, the tip portion of the lower lever 31 descends via the fulcrum. When the tip portion of the lower lever 31 descends, the tip portion of the upper lever 38 is pulled down via the spring member 42, and the rear end portion of the upper lever 38 rises via the fulcrum. The amount of rise of the rear end of the upper lever 38 is
The rear end of the micrometer 41, which is provided so as to face the front end, comes into contact with the front end of the micrometer 41 to regulate the micrometer 41. Therefore, when the wire-shaped brazing material 19 is placed on the pellet mounting base 11b of the first frame 11, the gap L between the micrometer 41 and the rear end of the upper lever 38 is set to a large value in advance. deep. Then, the motor 37 is driven and the wire-shaped brazing material 19 is lowered to a close position on the pellet mounting base 11b by operating the lower lever 31 or the like. Next, the distance L between the micrometer 41 and the rear end portion of the upper lever 38 is set to a value according to the amount of the wire-shaped brazing material 19 placed on the pellet mounting base 11b. Then, similarly to the above, the lower lever 31 and the like are operated by driving the motor 37, the capillary tool 20 is lowered, and a predetermined amount of the wire-shaped brazing material 19 is supplied onto the pellet mounting base 11b. Here, the feeding speed of the wire-shaped brazing material 19 due to the lowering of the capillary tool 20 needs to be set slower than the speed at which the wire-shaped brazing material 19 comes into contact with the pellet mounting base 11b and melts. Therefore, when the temperature of the pellet mounting base 11b is low, it must be slowed, and when the temperature of the pellet mounting base 11b is high, it must be fast. For example, using a wire-shaped brazing material 19 of 0.1φ made of Pb-Sn solder,
Approx. 20 mm / se when mounting mm □ semiconductor pellets
A delivery speed of c is preferred. Further, when the delivery amount is determined by setting the distance L between the micrometer 41 and the rear end portion of the upper lever 38 using, for example, the wire-shaped brazing material 19 of 0.1φ, the wire-shaped brazing material 19 with this delivery amount is set. The size of the semiconductor pellets that can be placed on the pellet mounting base 11b via is indicated by the characteristic line I shown in FIG. Similarly, the diameter of the wire-shaped brazing material 19 is 0.15φ
The characteristic line II in the figure when set to
Accordingly, the feed amount of the wire-shaped brazing material 19 and the size of the mountable semiconductor pellet are determined. In this way, when a predetermined amount of the brazing filler metal 19 is placed on the pellet mounting base 11b, the brazing material supply mechanism 30 separates the capillary tool 20 from the pellet mounting base 11b. After that, a semiconductor device is obtained by pressing a semiconductor pellet onto the pellet mounting base 11b through a predetermined amount of the wire-shaped brazing material 19 using a well-known suction jig or the like called a collet. The obtained semiconductor device is guided to the next step by the transfer of the frame 11 by the frame feeder 25. In synchronism with the transfer operation of the frame 11, the operations such as placing the wire-shaped brazing material 19 and pressing the semiconductor pellets are continuously performed.

このように0.1φ，0.3φ，0.5φ等の所望の径のワイヤ
ー状ろう材１９を、ろう材供給機構３０により約0.01mm
という高い送り出し精度でペレット配設基台１１ｂ上に
送り出す。しかも、ペレット配設基台１１ｂは、予めワ
イヤー状ろう材１９の融点よりも高い温度に加熱されて
いるので、極めて微量のワイヤー状ろう材１９を容易に
かつ正確にペレット配設基台１１ｂ上に載置することが
できる。更に、ワイヤー状ろう材１９は、下レバー３１
の先端部に取付けられた押え部材３２により把持されつ
つ、下レバー３１の先端部の下降により、ペレット配設
基台１１ｂに付勢押圧されながら押付けられる。これに
より、ワイヤー状ろう材１９の押し付け力を受けなが
ら、ペレット配設基台１１ｂ上にワイヤー状ろう材１９
は溶融しながら付着して行くので、表面に酸化膜が形成
されても直ちに破壊され、ペレット配設基台１１ｂとの
なじみ度は極めて高い。勿論、ろう材取付部全体が非酸
化性或は還元性雰囲気に包まれるということからも、載
置されたワイヤー状ろう材１９の表面に酸化膜が形成さ
れるのを阻止することができる、また、ワイヤー状ろう
材１９は、高いなじみ性の下にペレット配設基台１１ｂ
上に載置されると共に、送り出しに伴う押し付け力を受
けて載置されるので巣の発生を阻止することができる。
その結果、半導体ペレットは、極めて高い密着力で確実
にペレット配設基台１１ｂ上に装着される。In this way, the wire-shaped brazing filler metal 19 having a desired diameter of 0.1φ, 0.3φ, 0.5φ, etc. is about 0.01 mm by the brazing filler metal supply mechanism 30.
That is, it is sent out on the pellet arrangement base 11b with high sending accuracy. Moreover, since the pellet-arranged base 11b is previously heated to a temperature higher than the melting point of the wire-shaped brazing material 19, a very small amount of the wire-shaped brazing material 19 can be easily and accurately placed on the pellet-arranged base 11b. Can be placed on. Further, the wire-shaped brazing material 19 has a lower lever 31.
While being gripped by the pressing member 32 attached to the tip of the lower part of the lower lever 31, the lower end of the lower lever 31 is lowered and pressed against the pellet mounting base 11b while being urged and pressed. As a result, while receiving the pressing force of the wire-shaped brazing material 19, the wire-shaped brazing material 19 is placed on the pellet mounting base 11b.
Since they adhere while melting, even if an oxide film is formed on the surface, they are immediately destroyed and the degree of compatibility with the pellet mounting base 11b is extremely high. Of course, since the entire brazing material mounting portion is surrounded by the non-oxidizing or reducing atmosphere, it is possible to prevent the oxide film from being formed on the surface of the wire-shaped brazing material 19 placed. Further, the wire-shaped brazing material 19 has a high compatibility with the pellet disposition base 11b.
Since it is placed on top and is placed by receiving the pressing force associated with the delivery, it is possible to prevent the formation of nests.
As a result, the semiconductor pellets are reliably mounted on the pellet mounting base 11b with extremely high adhesion.

このような効果を確認するため、銅で形成されたペレッ
ト配設基台１１ｂ１、表面にAgメッキ層を形成したペレ
ット配設基台１１ｂ２、表面にNiメッキ層を形成したペ
レット配設基台11b３を設けた３種類のフレーム１１
１，１１２，１１３を用意し、実施例に従って半導体ペ
レットを装着した半導体装置（実施例）、従来のリボン
状ろう材マウント方にて半導体ペレットを装着した半導
体装置（比較例１）ワイヤ状ろう材切断式マウント方式
にて半導体ペレットを装着した半導体装置（比較例２）
の夫々を製造した。In order to confirm such an effect, a pellet arrangement base 11b 1 made of copper, a pellet arrangement base 11b 2 having an Ag plating layer formed on the surface, and a pellet arrangement base having a Ni plating layer formed on the surface Three kinds of frames 11 provided with a stand 11b 3
1, 112, 113 are prepared and a semiconductor device in which semiconductor pellets are mounted according to the embodiment (Example), a semiconductor device in which semiconductor pellets are mounted by a conventional ribbon-shaped brazing material mounting method (Comparative Example 1) wire-shaped brazing material Semiconductor device with semiconductor pellets mounted by cutting mount method (Comparative Example 2)
Manufactured each of.

これらの半導体装置における半導体ペレットを接着強度
を調べたところ下記表に示す結果を得た。また、半導体
ペレットとペレット配設基台１１b1，１１b2，１１b3間
のろう材からなる接合部内の巣の有無を調べところ、同
表に併記する結果を得た。同表から明らかな如く、実施
例で得られた半導体装置では、半導体ペレットは、巣の
ない接合部（ろう材層）にて極めて高い接着度でペレッ
ト配設基台１１b1に装着されていることが判った。When the adhesive strength of the semiconductor pellets in these semiconductor devices was examined, the results shown in the following table were obtained. Further, the presence or absence of cavities in the joint portion made of the brazing material between the semiconductor pellets and the pellet mounting bases 11b 1 , 11b 2 , 11b 3 was examined, and the results shown in the same table were obtained. As is clear from the table, in the semiconductor device obtained in Example, a semiconductor pellet is mounted to the pellet distribution設基table 11b 1 with an extremely high degree of adhesion at the nest without joint (brazing material layer) I knew that.

なお、実施例では、キャピラリーツール２０から所定量
のワイヤー状ろう材１９を送り出す手段として、カム３
５、上下レバー３８，３１、及びマイクロメータ４１等
を組合せた機構を採用したものを説明したが、送り出し
量を0.01mm程度まで制御できるものであれば如何なる手
段を採用しても良い。第９図は、その一例を示すもので
ある。この送り出し機構５０は、電磁弁５１の動作によ
ってワイヤー状ろう材１９の挾持爪５２を開閉するよう
になっている。電磁弁５１は、挾持爪５２の上部に保持
されている。挾持爪５２の下端部は、電磁弁５１により
開閉され、閉じた際にワイヤー状ろう材１９を挾持する
ようになっている。挾持爪５２の下部には、相対向する
挾持爪５２が離間しないようにばね５３が介在されてい
る。挾持爪５２は、その側部に取付けられたアーム５４
にてろう材供給機構の本体に取付けられている。挾持爪
５２の上部には、その先端部にて挾持されたワイヤ状ろ
う材１９の移送方向に沿ってレバー５５が取付けられて
いる。レバー５５は、約0.01mmの制御精度で伸縮するよ
うになっている。つまり、挾持爪５２でワイヤ状ろう材
１９を挾持した後、レバー５５の例えば縮み操作により
所定量だけワイヤ状ろう材１９を送り出す。送り出し後
挾持爪５２による挾持を解除して、レバー５５の伸び操
作により挾持爪５２はもとの位置に戻される、この操作
を繰り返すことにより所定量のワイヤー状ろう材１９の
送り出しが行われる。 In the embodiment, the cam 3 is used as a means for feeding a predetermined amount of the wire-shaped brazing material 19 from the capillary tool 20.
Although the mechanism employing the combination of the 5, the vertical levers 38 and 31 and the micrometer 41 has been described, any means may be employed as long as it can control the delivery amount to about 0.01 mm. FIG. 9 shows an example thereof. The delivery mechanism 50 is configured to open and close the holding claw 52 of the wire-shaped brazing material 19 by the operation of the electromagnetic valve 51. The solenoid valve 51 is held on the upper part of the holding claw 52. The lower end of the holding claw 52 is opened and closed by the solenoid valve 51, and holds the wire-shaped brazing material 19 when closed. A spring 53 is interposed below the holding claws 52 so that the holding claws 52 facing each other are not separated from each other. The holding claw 52 has an arm 54 attached to the side thereof.
It is attached to the body of the brazing material supply mechanism. A lever 55 is attached to the upper part of the holding claw 52 along the transfer direction of the wire-shaped brazing material 19 held at the tip thereof. The lever 55 is adapted to expand and contract with a control accuracy of about 0.01 mm. In other words, after the wire-shaped brazing material 19 is held by the holding claws 52, the wire-shaped brazing material 19 is fed out by a predetermined amount by, for example, a contraction operation of the lever 55. After the feeding, the holding by the holding claw 52 is released, and the holding claw 52 is returned to the original position by the extension operation of the lever 55. By repeating this operation, the predetermined amount of the wire-shaped brazing material 19 is sent out.

第１０図は、送り出し手段の他の例を示すものである。
この送り出し機構６０は、基板６１上に２個の送り出し
ローラ６２ａ，６２ｂをその周面間にワイヤー状ろう材
１９を挾持するようにして立設されている。一方のロー
ラ６２ａの軸芯は、基板６１の裏面側に取付けられたパ
ルスモータ６３の回転軸に接続している。而して、パル
スモータ６３の回転数を制御することによりワイヤ状ろ
う材１９の送り出し量を制御するようになっている。FIG. 10 shows another example of the sending means.
The delivery mechanism 60 is provided on a substrate 61 so as to stand upright with two delivery rollers 62a and 62b sandwiching the wire-shaped brazing material 19 between its peripheral surfaces. The shaft center of one roller 62a is connected to the rotation shaft of a pulse motor 63 attached to the back surface side of the substrate 61. Thus, by controlling the number of rotations of the pulse motor 63, the feeding amount of the wire-shaped brazing material 19 is controlled.

〔発明の効果〕〔The invention's effect〕

以上説明した如く、本発明に係る半導体装置の製造方法
及びその製造装置によれば、ろう材とペレット配設基台
とのなじみ性を向上すると共に、ろう材中に巣が発生す
るのを防止し、かつ、高い密着度で確実にしかも容易に
半導体ペレットをペレット配設基台に装着することがで
きるものである。As described above, according to the method of manufacturing a semiconductor device and the manufacturing apparatus thereof according to the present invention, the compatibility between the brazing material and the pellet mounting base is improved, and the formation of cavities in the brazing material is prevented. In addition, the semiconductor pellets can be mounted on the pellet mounting base reliably and easily with high adhesion.

【図面の簡単な説明】[Brief description of drawings]

第１図(A)及び同図(B)は、従来方法にて所定長のリボン
状ろう材をペレット配設基台上に載置した状態を示す説
明図、第２図(A)及び同図(B)は、従来方法にて円板状の
ろう材をペレット配設基台上に載置した状態を示す説明
図、第３図は、ばりのあるろう材がペレット配設基台上
に載置された状態を示す説明図、第４図は、吸着治具に
てペレット配設基台上に載置されたろう材の状態を示す
説明図、第５図(A)及び同図(B)は、所定長のワイヤ状ろ
う材がペレット配設基台上に載置された状態を示す説明
図、第６図(A)は、本発明の一実施例の横断面図、同図
(B)は、同実施例の縦断面図、第７図は、ろう材供給機
構の概略構成を示す説明図、第８図は、ワイヤー状ろう
材の送り出し量と装着する半導体ペレットの大きさとの
関係を示す特性図、第９図及び第10図は、ワイヤー状ろ
う材の送り出し手段の他の実施例の説明図である。 １０……ハウジング、１１……フレーム、１２……移送
路、１３……ヒーターブロック、１４……熱源、１５…
…雰囲気ガス供給路、１５ａ……端末供給路、１６……
雰囲気ガス供給管、１７……送りピン、１８……窓、１
９……ワイヤー状ろう材、２０……キャピラリーツー
ル、２１……位置決めピン、２２……位置決め孔、２５
……フレームフィーダ、３０……ろう材供給機構、３１
……下レバー、３２……押え部材、３３……本体、３４
……揺動レバー、３５……カム、３６……ベルト、３７
……モータ、３８……上レバー、３９……押え部材、４
０……案内部材、４１……マイクロメータ、４２……ば
ね部材、４３……スプール、５０……送り出し機構、５
１……電磁弁、５２……挾持爪、５３……ばね、５４…
…アーム、５５……レバー、６０……送り出し機構、６
１……基板、６２ａ，６２ｂ……送り出しローラ、６３
……パルスモータ。FIG. 1 (A) and FIG. 1 (B) are explanatory views showing a state in which a ribbon-shaped brazing material of a predetermined length is placed on a pellet mounting base by a conventional method, FIG. 2 (A) and the same. Figure (B) is an explanatory view showing a state in which a disc-shaped brazing material is placed on a pellet-arranged base by a conventional method, and FIG. FIG. 4 is an explanatory view showing a state of being placed on the pellet mounting base, and FIG. 4 is an explanatory view showing a state of the brazing material placed on the pellet mounting base by the suction jig, FIG. 5 (A) and FIG. B) is an explanatory view showing a state in which a wire-shaped brazing material of a predetermined length is placed on a pellet arrangement base, and FIG. 6 (A) is a cross-sectional view of one embodiment of the present invention.
(B) is a vertical cross-sectional view of the same embodiment, FIG. 7 is an explanatory view showing a schematic configuration of a brazing filler metal supply mechanism, and FIG. 8 is a delivery amount of a wire brazing filler metal and a size of a semiconductor pellet to be mounted. FIG. 9, FIG. 10 and FIG. 10 are explanatory views of another embodiment of the wire brazing material feeding means. 10 ... Housing, 11 ... Frame, 12 ... Transfer path, 13 ... Heater block, 14 ... Heat source, 15 ...
... atmosphere gas supply path, 15a ... terminal supply path, 16 ...
Atmosphere gas supply pipe, 17 ... Feed pin, 18 ... Window, 1
9: Wire brazing material, 20: Capillary tool, 21 ... Positioning pin, 22 ... Positioning hole, 25
...... Frame feeder, 30 …… Brazil material supply mechanism, 31
...... Lower lever, 32 ...... Presser member, 33 ...... Main body, 34
...... Rotating lever, 35 ...... Cam, 36 ...... Belt, 37
...... Motor, 38 …… Upper lever, 39 …… Pressing member, 4
0 ... Guide member, 41 ... Micrometer, 42 ... Spring member, 43 ... Spool, 50 ... Delivery mechanism, 5
1 ... Solenoid valve, 52 ... Holding claw, 53 ... Spring, 54 ...
… Arm, 55 …… Lever, 60 …… Sending mechanism, 6
1 ... Substrate, 62a, 62b ... Delivery roller, 63
...... Pulse motor.

───────────────────────────────────────────────────── フロントページの続き (72)発明者 井上 和夫 兵庫県姫路市余部区上余部50番地 東京芝 浦電気株式会社姫路工場内 (72)発明者 米山 正志 兵庫県姫路市余部区上余部50番地 東京芝 浦電気株式会社姫路工場内 (56)参考文献 特開 昭56−87331（ＪＰ，Ａ) 特開 昭56−26444（ＪＰ，Ａ) 特開 昭55−93231（ＪＰ，Ａ) 特開 昭57−103320（ＪＰ，Ａ) 特開 昭52−170（ＪＰ，Ａ) 実開 昭57−191045（ＪＰ，Ｕ) 実開 昭56−161340（ＪＰ，Ｕ) 実開 昭54−157561（ＪＰ，Ｕ) ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Kazuo Inoue, 50, Ueimabe, Yobu, Himeji City, Hyogo Prefecture Tokyo Shibaura Electric Co., Ltd., Himeji Plant (72) Inventor, Masashi Yoneyama 50, Uebe, Yobu, Himeji, Hyogo Prefecture Tokyo Shibaura Electric Co., Ltd. Himeji Factory (56) Reference JP-A-56-87331 (JP, A) JP-A-56-26444 (JP, A) JP-A-55-93231 (JP, A) JP-A 57-103320 (JP, A) JP-A-52-170 (JP, A) Actually opened 57-191045 (JP, U) Actually opened 56-161340 (JP, U) Actually opened 54-157561 (JP, U)

Claims (2)

【特許請求の範囲】[Claims] 【請求項１】非酸化性雰囲気または還元性雰囲気中に配
置されているペレット配設基台を該配設基台上に被着す
るろう材の融点以上の温度に加熱する工程と、所定量の
ワイヤ状のろう材を前記ペレット配設基台上に付勢押圧
しながら押付けて被着する工程と、被着された該ろう材
を介して前記配設基台上に半導体ペレットを押着する工
程とを具備することを特徴とする半導体装置の製造方
法。1. A step of heating a pellet mounting base arranged in a non-oxidizing atmosphere or a reducing atmosphere to a temperature equal to or higher than a melting point of a brazing material adhered on the mounting base, and a predetermined amount. And pressing the wire-shaped brazing material onto the pellet mounting base while pressing it, and pressing the semiconductor pellet onto the mounting base through the deposited brazing material. A method of manufacturing a semiconductor device, comprising: 【請求項２】内部にフレームの移送路を形成したハウジ
ングと、該ハウジング内に設けられたフレームフィーダ
と、該ハウジング内に連通した雰囲気ガス供給管と、該
ハウジング内のろう材取付部に対向して該ハウジングに
開口された窓と、該窓を介して前記ろう材取付部に出入
自在に設けられたキャピラリーツールと、所定量のワイ
ヤ状ろう材を前記ペレット配設基台上に付勢押圧しなが
ら押付けるように該キャピラリーツールに供給するろう
材供給機構と、前記フレームのペレット配設基台を前記
キャピラリーツールに対向して位置決めする位置決め部
材と、前記ろう材取付部に設けられた前記フレームの熱
源とを具備することを特徴とする半導体装置の製造装
置。2. A housing having a frame transfer passage formed therein, a frame feeder provided in the housing, an atmosphere gas supply pipe communicating with the housing, and a brazing material mounting portion in the housing. Then, a window opened in the housing, a capillary tool that can be inserted into and removed from the brazing material mounting portion through the window, and a predetermined amount of wire-shaped brazing material are urged onto the pellet-arranged base. A brazing material supply mechanism that supplies the capillary tool so as to press it while pressing, a positioning member that positions the pellet mounting base of the frame so as to face the capillary tool, and a brazing material mounting portion. An apparatus for manufacturing a semiconductor device, comprising: a heat source for the frame.
JP57217411A 1982-12-11 1982-12-11 Semiconductor device manufacturing method and manufacturing apparatus thereof Expired - Lifetime JPH0614525B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57217411A JPH0614525B2 (en) 1982-12-11 1982-12-11 Semiconductor device manufacturing method and manufacturing apparatus thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57217411A JPH0614525B2 (en) 1982-12-11 1982-12-11 Semiconductor device manufacturing method and manufacturing apparatus thereof

Publications (2)

Publication Number Publication Date
JPS59106124A JPS59106124A (en) 1984-06-19
JPH0614525B2 true JPH0614525B2 (en) 1994-02-23

Family

ID=16703776

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JP57217411A Expired - Lifetime JPH0614525B2 (en) 1982-12-11 1982-12-11 Semiconductor device manufacturing method and manufacturing apparatus thereof

Country Status (1)

Country Link
JP (1) JPH0614525B2 (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0628268B2 (en) * 1985-09-19 1994-04-13 ロ−ム株式会社 Die bonding method for semiconductor pellets
JP4639607B2 (en) * 2004-03-04 2011-02-23 日立金属株式会社 Method for producing lead-free solder material and Pb-free solder material
JP6598151B2 (en) * 2015-08-25 2019-10-30 ローム株式会社 Semiconductor device and manufacturing method thereof

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6334269Y2 (en) * 1981-05-28 1988-09-12

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