JPH06143491A - Conductive laminated film - Google Patents
Conductive laminated filmInfo
- Publication number
- JPH06143491A JPH06143491A JP4297427A JP29742792A JPH06143491A JP H06143491 A JPH06143491 A JP H06143491A JP 4297427 A JP4297427 A JP 4297427A JP 29742792 A JP29742792 A JP 29742792A JP H06143491 A JPH06143491 A JP H06143491A
- Authority
- JP
- Japan
- Prior art keywords
- film
- layer
- underlayer
- film substrate
- base material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0313—Organic insulating material
- H05K1/032—Organic insulating material consisting of one material
- H05K1/0346—Organic insulating material consisting of one material containing N
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
- H05K3/381—Improvement of the adhesion between the insulating substrate and the metal by special treatment of the substrate
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
- H05K3/386—Improvement of the adhesion between the insulating substrate and the metal by the use of an organic polymeric bonding layer, e.g. adhesive
Landscapes
- Treatments Of Macromolecular Shaped Articles (AREA)
- Laminated Bodies (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、ＴＡＢ（Tape Automat
ed Bonding）やＦＰＣ（Flexible PrintCircuit）など
の二層フィルムキャリアとして使用される導電性積層フ
ィルムおよびその製造方法に関する。BACKGROUND OF THE INVENTION The present invention relates to a TAB (Tape Automat).
The present invention relates to a conductive laminated film used as a two-layer film carrier such as ed bonding) and FPC (Flexible Print Circuit), and a manufacturing method thereof.
【０００２】[0002]
【従来の技術】前記ＴＡＢは、テープ状のフィルムキャ
リア上に間隔を空けて形成された金属のリードと、半導
体チップの電極の対応部分とを適当な手段により接合
し、多数の配線を同時に完了するボンディング方式の総
称である。2. Description of the Related Art In the TAB, metal leads formed at intervals on a tape-shaped film carrier and corresponding portions of electrodes of a semiconductor chip are joined by an appropriate means to complete a large number of wirings at the same time. Is a general term for bonding methods.
【０００３】前記フィルムキャリアとしては、デバイス
ホールの形成されたポリイミド製のフィルム基材上に銅
箔を接着剤で貼り合わせ、さらに銅箔を湿式エッチング
してリードを形成したものが現在主流であり、これらは
三層フィルムキャリアと称される。As the film carrier, a film carrier in which a copper foil is adhered onto a polyimide film substrate having a device hole formed therein by an adhesive and the copper foil is wet-etched to form leads is presently the mainstream. , These are called tri-layer film carriers.
【０００４】しかし、前記三層フィルムキャリアでは、
銅箔を接着剤でポリイミドフィルムに貼り合わせるため
に、取扱い上の問題から銅箔はあまり薄くできず、１８
μ以上とせざるを得ないため、加工精度を高めにくい欠
点がある。また、銅箔を薄くすると、接着剤層へのエッ
チング液の染み込み等の影響を受けやすくなり、電気特
性の低下が免れない。さらに、高温環境では接着剤層が
特性劣化するため、将来的には高温安定性が不足するお
それもあるため、ＬＳＩの多ピン化に伴うリードパター
ンの微細化に対応しきれないという問題があった。However, in the above three-layer film carrier,
Since the copper foil is attached to the polyimide film with an adhesive, the copper foil cannot be made so thin due to handling problems.
Since there is no choice but to make it μ or more, there is a drawback that it is difficult to improve processing accuracy. Further, if the copper foil is made thin, it tends to be affected by the penetration of the etching solution into the adhesive layer, and the electrical characteristics are unavoidably deteriorated. Furthermore, since the characteristics of the adhesive layer deteriorate in a high temperature environment, there is a possibility that the high temperature stability will be insufficient in the future, and there is a problem that the miniaturization of the lead pattern due to the increase in the number of pins of the LSI cannot be dealt with. It was
【０００５】そこで、多ピン化への対応を可能とするた
め、接着剤を使用せず、ポリイミドフィルムの表面に無
電解めっきまたは蒸着により銅層を直接形成した二層フ
ィルムキャリアが一部で実用化されている。In order to cope with the increase in the number of pins, a two-layer film carrier in which a copper layer is directly formed on the surface of a polyimide film by electroless plating or vapor deposition without using an adhesive is practically used in part. Has been converted.
【０００６】現在工業的に実用化されているポリイミド
フィルムとしては２種類のタイプがある。第１は、原料
の酸二無水物としてビフェニルテトラカルボン酸二無水
物（ＢＰＤＡ）を使用するＢＰＤＡ系ポリイミドフィル
ムであり、第２は、ピロメリット酸二無水物（ＰＭＤ
Ａ）を使用するＰＭＤＡ系ポリイミドフィルムである。There are two types of polyimide films currently industrially put to practical use. The first is a BPDA-based polyimide film that uses biphenyltetracarboxylic dianhydride (BPDA) as the raw acid dianhydride, and the second is pyromellitic dianhydride (PMD).
It is a PMDA type polyimide film which uses A).
【０００７】第１のＢＰＤＡ系ポリイミドフィルムは、
剛性が高く、熱収縮および吸湿に対する寸法安定性に優
れており、フィルムキャリアの薄型化に有利であるう
え、扱いやすく、信頼性も高いなど、金属膜付きポリイ
ミドフィルムのフィルム基材として適している。The first BPDA polyimide film is
High rigidity, excellent dimensional stability against heat shrinkage and moisture absorption, advantageous for thinning film carrier, easy to handle and highly reliable, suitable as a film base material for polyimide film with metal film .
【０００８】[0008]
【発明が解決しようとする課題】しかし、ＢＰＤＡ系ポ
リイミドフィルムは、その特長である強固な分子結合の
ため、真空蒸着法等によって形成される金属層との接合
性が悪く、以下のような問題を有していた。However, since the BPDA-based polyimide film has a strong molecular bond, which is a characteristic of the BPDA-based polyimide film, its bondability to a metal layer formed by a vacuum deposition method or the like is poor and the following problems occur. Had.
【０００９】（１） ＴＡＢのリード形成時のアディテ
ィブめっき工程や、半導体の実装工程におけるエッチン
グ等で、高温、高湿などの環境にさらされると、金属膜
が剥離することがある。 （２） フィルム基材を連続走行させつつ金属膜を蒸着
形成する過程で、金属膜の表面とフィルム送りロールの
表面が接触するが、この時、金属膜の局部的剥離により
金属膜に微細な傷が発生しやすい。この種の傷を持つ導
電性積層フィルムを用いてＴＡＢの製造を行うと、回路
の断線が生じることがあり、歩留まりが低下する。(1) The metal film may peel off when exposed to an environment such as high temperature and high humidity due to an additive plating process at the time of forming a TAB lead or etching in a semiconductor mounting process. (2) The surface of the metal film and the surface of the film feed roll come into contact with each other in the process of vapor-depositing and forming the metal film while the film base material is continuously running. It is easily scratched. When TAB is manufactured using a conductive laminated film having this kind of scratch, circuit breakage may occur, resulting in a decrease in yield.
【００１０】上記（１），（２）の理由から、二層ＴＡ
Ｂ用の導電性積層フィルムとしては、比較的金属膜との
接合性が良いＰＭＤＡ系ポリイミドをフィルム基材とし
た製品しか製造されていないのが現状である。For the reasons (1) and (2) above, the two-layer TA
At present, as the conductive laminated film for B, only a product using PMDA-based polyimide, which has a relatively good bonding property with a metal film, as a film base material is manufactured.
【００１１】なお、この種の導電性積層フィルムはＴＡ
Ｂ用のみに使用されるものではなく、ＦＰＣにも使用さ
れ、ＦＰＣ用導電性積層フィルムにも前記同様の問題が
生じている。The conductive laminated film of this type is manufactured by TA
It is used not only for B but also for FPC, and the same problems as described above occur in the conductive laminated film for FPC.
【００１２】本発明は上記事情に鑑みてなされたもの
で、ＢＰＤＡ系ポリイミドフィルム基材と金属膜の接合
性の改善を図ることにより、キャリアフィルムの薄型化
が図れ、寸法安定性も高められる導電性積層フィルムを
得ることを課題としている。The present invention has been made in view of the above circumstances. By improving the bondability between the BPDA-based polyimide film base material and the metal film, the carrier film can be made thinner and the dimensional stability can be improved. To obtain a flexible laminated film.
【００１３】[0013]
【課題を解決するための手段】始めに、本発明に係る導
電性積層フィルムの製造方法から説明する。この方法で
は、まず、原料としてビフェニルテトラカルボン酸二無
水物を使用したＢＰＤＡ系ポリイミド製のフィルム基材
の少なくとも片面を、アルカリ溶液で処理することによ
り、Ｒａ値０．０２〜０．１μｍとなるように粗面化お
よび活性化する。フィルム基材の厚さは限定されない
が、一般的には１２〜１２５μｍ程度とされる。フィル
ム基材自体を組成の異なる複数の樹脂層で構成してもよ
い。First, a method for producing a conductive laminated film according to the present invention will be described. In this method, first, at least one surface of a BPDA-based polyimide film substrate using biphenyltetracarboxylic dianhydride as a raw material is treated with an alkaline solution to obtain an Ra value of 0.02 to 0.1 μm. Roughening and activating. Although the thickness of the film substrate is not limited, it is generally about 12 to 125 μm. The film substrate itself may be composed of a plurality of resin layers having different compositions.
【００１４】アルカリ溶液としては、水酸化ナトリウ
ム、水酸化カリウム、ヒドラジンヒドラート、過塩素酸
カリウム等から選択される物質を１種または２種以上含
有する溶液、またはその溶液にさらにエチレンジアミ
ン、ジメチルアミン等を混合した溶液を用い、例えば、
液温１０〜８０℃、処理時間１〜９０分間で浸漬処理し
て、表面粗度をＲａ値で０．０２〜０．１μｍにする。As the alkaline solution, a solution containing one or more substances selected from sodium hydroxide, potassium hydroxide, hydrazine hydrate, potassium perchlorate, or the like, or ethylenediamine or dimethylamine is added to the solution. Using a mixed solution of, for example,
Immersion treatment is performed at a liquid temperature of 10 to 80 ° C. for a treatment time of 1 to 90 minutes to adjust the surface roughness to an Ra value of 0.02 to 0.1 μm.
【００１５】次に、前記フィルム基材を水洗および乾燥
した後、真空処理槽内に入れ、前記フィルム基材の粗面
化および活性化した表面を、フッ素を含むガス中でプラ
ズマ処理することにより、前記表面に前記ポリイミドの
フッ素化層を形成する。プラズマ処理方法としては、グ
ロー放電法、アーク放電法、高周波放電法、マイクロ波
放電法等の公知の方法がいずれも採用できる。Next, after washing and drying the film substrate, the film substrate is placed in a vacuum treatment tank, and the roughened and activated surface of the film substrate is plasma-treated in a gas containing fluorine. Forming a fluorinated layer of the polyimide on the surface. As the plasma treatment method, any known method such as a glow discharge method, an arc discharge method, a high frequency discharge method, and a microwave discharge method can be adopted.
【００１６】フッ素を含むガスとしては、ＣＦ4 ，Ｃ2
Ｆ6，Ｃ3Ｆ8等のフロロカーボン、ＣＨＦ3，Ｃ2Ｈ2Ｆ4
等のハイドロフロロカーボン、Ｓ2Ｆ2，ＳＦ4等のフッ
化硫黄、ＮＦ3 等のフッ化窒素をそのまま使用しても良
いし、あるいはこれらのフッ素化合物ガスと、Ｈｅ，Ａ
ｒ，Ｏ2，Ｎ2等を混合したガスを用いてもよい。さら
に、フッ素ガスをＨｅ，Ａｒ等で希釈したガスを用いる
ことも可能である。Gases containing fluorine include CF 4 , C 2
Fluorocarbons such as F 6 and C 3 F 8 , CHF 3 and C 2 H 2 F 4
Such as hydrofluorocarbons, sulfur fluorides such as S 2 F 2 and SF 4 , nitrogen fluorides such as NF 3 may be used as they are, or these fluorine compound gases and He, A
r, it may be used O 2, a mixed gas of N 2 and the like. Further, it is also possible to use a gas obtained by diluting fluorine gas with He, Ar or the like.
【００１７】この明細書中、フッ素化層とは、フィルム
基材の表面を構成するポリイミド分子にフッ素を含む官
能基が新たに形成された表層領域を指すが、フッ素を含
む官能基は複数種混在しているものと考えられ、その構
造を特定することは困難である。フッ素化層の厚さは限
定できないが、フィルム基材の表面におけるフッ素原子
と炭素原子の存在比（Ｆ／Ｃ）で規定すると、本発明で
は１．０〜３．０程度が好適である。上記存在比が１．
０未満では十分な接合強度向上効果が得られず、３．０
より多くても同様に十分な接合強度向上効果が得られな
い。In this specification, the fluorinated layer refers to a surface layer region in which a functional group containing fluorine is newly formed in the polyimide molecule constituting the surface of the film substrate. It is considered that they are mixed, and it is difficult to identify their structures. Although the thickness of the fluorinated layer cannot be limited, it is preferably about 1.0 to 3.0 in the present invention when it is defined by the abundance ratio (F / C) of fluorine atoms and carbon atoms on the surface of the film substrate. The abundance ratio is 1.
If it is less than 0, a sufficient effect of improving the bonding strength cannot be obtained, so
Even if the amount is larger, a sufficient effect of improving the bonding strength cannot be obtained.
【００１８】次に、フィルム基材に形成されたフッ素化
層上に、クロム、銀およびパラジウムから選択される１
種または２種以上の金属からなる下地層を、乾式めっき
法によって形成する。乾式めっき法としては従来公知の
蒸着方法がいずれも使用可能である。いずれの材質を使
用した場合にも、下地層の膜厚は１０〜１００オングス
トロームが好ましい。１０オングストロームより薄いと
接合性向上効果が低く、１００オングストロームより厚
いと生産性が低下する。Next, on the fluorinated layer formed on the film substrate, selected from chromium, silver and palladium 1
An underlayer made of one kind or two or more kinds of metals is formed by a dry plating method. As the dry plating method, any conventionally known vapor deposition method can be used. Whatever material is used, the thickness of the underlayer is preferably 10 to 100 angstroms. If it is thinner than 10 angstroms, the effect of improving the bondability is low, and if it is thicker than 100 angstroms, the productivity is lowered.
【００１９】次に、下地層上に、銅または銅合金からな
る導電層を乾式めっきにより形成する。乾式めっき法
は、前記と同じく公知の蒸着方法のいずれでも良い。導
電層の膜厚は、導電性積層フィルムの用途に応じて自由
に設定して良いが、通常は１０００〜１００００オング
ストロームとされる。導電層に使用可能な銅合金として
はジルコニウム添加銅，錫添加銅，ニッケル添加銅など
が例示できるが、これらに限定されることはない。Next, a conductive layer made of copper or a copper alloy is formed on the underlayer by dry plating. The dry plating method may be any known vapor deposition method as described above. The thickness of the conductive layer may be freely set depending on the application of the conductive laminated film, but is usually 1000 to 10000 angstrom. Examples of the copper alloy that can be used for the conductive layer include zirconium-added copper, tin-added copper, nickel-added copper, and the like, but are not limited thereto.
【００２０】なお、本発明の製造方法において、前記プ
ラズマ処理工程、下地層の蒸着工程、あるいは導電層の
蒸着工程のうち少なくとも１工程では、ポリイミドフィ
ルム基材をヒーター等で１００〜４００℃、好ましくは
１５０〜２８０℃に加熱しながら処理することが望まし
い。この温度範囲での加熱処理を行うと、フィルム基材
の表面の清浄化作用および表面での蒸着分子の拡散作用
により、金属膜とフィルム基材との接合性をより向上で
きる。In the production method of the present invention, in at least one of the plasma treatment step, the underlayer vapor deposition step, and the conductive layer vapor deposition step, the polyimide film substrate is heated to 100 to 400 ° C., preferably. Is preferably heated to 150 to 280 ° C. When the heat treatment is performed within this temperature range, the bonding property between the metal film and the film substrate can be further improved by the cleaning action on the surface of the film substrate and the diffusion action of the vapor deposition molecules on the surface.
【００２１】以上の工程を経ることにより、本発明に係
る導電性積層フィルムが得られる。ただし、必要によっ
ては、前記導電層上にさらに銅または銅合金の電解また
は無電解めっきを施して厚肉化し、いっそう導電性を高
めてもよい。また、前記各工程をフィルム基材の両面に
対して行い、フィルム基材の両面に金属蒸着層を設けて
もよい。Through the above steps, the conductive laminated film of the present invention can be obtained. However, if necessary, the conductive layer may be further electrolytically or electrolessly plated with copper or a copper alloy so as to be thickened to further increase the conductivity. Moreover, you may perform each said process on both surfaces of a film base material, and may provide a metal vapor deposition layer on both surfaces of a film base material.
【００２２】なお、本発明の導電性積層フィルムおよび
その製造方法は、ＴＡＢのみならずＦＰＣにも有効に使
用可能である。The conductive laminated film and the method for producing the same of the present invention can be effectively used not only for TAB but also for FPC.
【００２３】[0023]
【実施例】次に実施例を挙げて本発明の効果を実証す
る。 （実施例１）ＢＰＤＡ系ポリイミドフィルム基材とし
て、宇部興産株式会社製の「ユーピレックス−Ｓ」（商
品名）：７５μｍ厚を使用し、このフィルム基材を以下
の組成からなるアルカリ溶液に室温で９０分間浸漬し、
その後、水洗して乾燥した。フィルム基材の両面の表面
粗さはＲａ値で０．０４μｍとなった。EXAMPLES Next, the effects of the present invention will be demonstrated with reference to examples. (Example 1) "UPILEX-S" (trade name) manufactured by Ube Industries, Ltd .: 75 μm thick was used as a BPDA-based polyimide film substrate, and the film substrate was immersed in an alkaline solution having the following composition at room temperature. Soak for 90 minutes,
Then, it was washed with water and dried. The surface roughness of both surfaces of the film substrate was Ra value of 0.04 μm.
【００２４】アルカリ溶液の組成 水酸化ナトリウム： ４０ｗｔ％ ヒドラジンヒドラート： １８ｗｔ％ エチレンジアミン： ７ｗｔ％Composition of alkaline solution Sodium hydroxide: 40 wt% Hydrazine hydrate: 18 wt% Ethylenediamine: 7 wt%
【００２５】次に、表面を粗面化したフィルム基材を真
空処理槽に入れ、槽内を一旦真空排気した後、処理ガス
としてＮＦ3 を槽内に導入し、ＲＦ放電方式により下記
条件でプラズマ処理を行なった。処理中はフィルム基材
をヒーターで加熱した。このプラズマ処理により、フィ
ルム基材の表面におけるフッ素原子と炭素原子の存在比
（Ｆ／Ｃ）は１．７になった。Next, the film base material having a roughened surface is placed in a vacuum treatment tank, the inside of the tank is evacuated once, and NF 3 is introduced into the tank as a processing gas under the following conditions by an RF discharge system. Plasma treatment was performed. The film substrate was heated by a heater during the treatment. By this plasma treatment, the abundance ratio (F / C) of fluorine atoms and carbon atoms on the surface of the film substrate became 1.7.
【００２６】プラズマ処理条件 フィルム基材加熱温度： １５０℃ ガス導入圧力： ４〜７×１０-2Ｔｏｒｒ ＲＦ放電電力： ２００Ｗ プラズマ処理時間： １５分Plasma treatment conditions Film substrate heating temperature: 150 ° C. Gas introduction pressure: 4 to 7 × 10 −2 Torr RF discharge power: 200 W Plasma treatment time: 15 minutes
【００２７】次いで、同一真空槽内において、前記プラ
ズマ処理面に対し下記条件で蒸着を行ない、下地層を形
成した。 下地層物質： Ｃｒ 下地層膜厚： ５０オングストローム フィルム基材加熱温度： １５０℃Next, in the same vacuum chamber, vapor deposition was performed on the plasma-treated surface under the following conditions to form a base layer. Underlayer material: Cr Underlayer film thickness: 50 Å Film substrate heating temperature: 150 ° C
【００２８】さらに、同一真空層内で下記条件により蒸
着を行い、導電層を形成して実施例１の導電性積層フィ
ルムを得た。 導電層物質： Ｃｕ 導電層膜厚： ３０００オングストローム フィルム基材加熱温度： １５０℃Further, vapor deposition was carried out in the same vacuum layer under the following conditions to form a conductive layer to obtain a conductive laminated film of Example 1. Conductive layer material: Cu Conductive layer film thickness: 3000 Å Film substrate heating temperature: 150 ° C
【００２９】（実施例２）下地層形成時および導電層形
成時におけるフィルム基材の加熱を止めた以外は、実施
例１と全く同様の処理を行い、実施例２の導電性積層フ
ィルムを得た。(Example 2) Except for stopping the heating of the film substrate during the formation of the underlayer and the conductive layer, the same treatment as in Example 1 was carried out to obtain the conductive laminated film of Example 2. It was
【００３０】（実施例３）プラズマ処理時および導電層
形成時におけるフィルム基材の加熱を止めた以外は、実
施例１と全く同様の処理を行い、実施例３の導電性積層
フィルムを得た。(Example 3) Except for stopping the heating of the film base material during the plasma treatment and the formation of the conductive layer, the same treatment as in Example 1 was carried out to obtain the conductive laminated film of Example 3. .
【００３１】（実施例４）プラズマ処理時および下地層
形成時におけるフィルム基材の加熱を止めた以外は、実
施例１と全く同様の処理を行い、実施例４の導電性積層
フィルムを得た。(Example 4) Except for stopping the heating of the film base material during the plasma treatment and the formation of the underlayer, the same treatment as in Example 1 was carried out to obtain the conductive laminated film of Example 4. .
【００３２】（実施例５）下地層として、Ｃｒの代わり
にＰｄを５０オングストロームにした点以外は、実施例
１と全く同様の処理を行い、実施例５の導電性積層フィ
ルムを得た。Example 5 A conductive laminated film of Example 5 was obtained by the same process as in Example 1 except that Pd was 50 angstrom instead of Cr as the underlayer.
【００３３】（比較例１）前記ポリイミドフィルム基材
に、前記アルカリ溶液による処理を行なわないこと以外
は、実施例１と全く同様の処理を行い、比較例１の導電
性積層フィルムを得た。Comparative Example 1 A conductive laminated film of Comparative Example 1 was obtained by performing the same treatment as in Example 1 except that the treatment with the alkali solution was not performed on the polyimide film substrate.
【００３４】（比較例２）前記ポリイミドフィルム基材
に、前記プラズマ処理を行なわないこと以外は、実施例
１と全く同様の処理を行い、比較例２の導電性積層フィ
ルムを得た。Comparative Example 2 A conductive laminated film of Comparative Example 2 was obtained by performing the same treatment as in Example 1 except that the plasma treatment was not performed on the polyimide film substrate.
【００３５】（比較例３）プラズマ処理時、下地層形成
時および導電層形成時のいずれにおいても前記ポリイミ
ドフィルム基材を加熱しないこと以外は、実施例１と全
く同様の処理を行い、比較例３の導電性積層フィルムを
得た。(Comparative Example 3) Comparative Example 3 was carried out in the same manner as in Example 1 except that the polyimide film substrate was not heated during the plasma treatment, underlayer formation and conductive layer formation. A conductive laminated film of 3 was obtained.
【００３６】（比較例４）前記ポリイミドフィルム基材
に、アルカリ溶液による処理、およびプラズマ処理を行
なわないこと以外は、実施例１と全く同様の処理を行
い、比較例４の導電性積層フィルムを得た。(Comparative Example 4) The conductive laminated film of Comparative Example 4 was prepared in the same manner as in Example 1 except that the polyimide film substrate was not treated with an alkaline solution or plasma. Obtained.
【００３７】（比較実験）実施例１〜５および比較例１
〜４の導電性積層フィルムの金属膜上に、通常の硫酸銅
浴により銅めっきを２０μｍ厚さに形成し、これらシー
トから幅１０ｍｍ、長さ１５０ｍｍの短冊状試料を切り
出した。そしてＩＰＣ−ＴＭ−６５０（米国プリント回
路工業会規格試験法）による方法で、フィルム基材と金
属膜間の剥離強度を測定した。(Comparative Experiment) Examples 1 to 5 and Comparative Example 1
Copper plating was formed in a thickness of 20 μm on a metal film of the conductive laminated film of Nos. 4 to 4 by a normal copper sulfate bath, and strip-shaped samples having a width of 10 mm and a length of 150 mm were cut out from these sheets. Then, the peel strength between the film substrate and the metal film was measured by a method according to IPC-TM-650 (American Printed Circuit Industry Association standard test method).
【００３８】この試験法は、前記短冊状試験片のポリイ
ミドフィルム側を６インチの直径のドラムの外周に周方
向へ向けて接着固定したうえ、金属膜の一端を治具で５
ｃｍ／分でポリイミドフィルムから剥離させながら引っ
張り、それに要する荷重を測定する方法である。結果は
表１および表２の通りだった。In this test method, the polyimide film side of the strip-shaped test piece was bonded and fixed to the outer periphery of a drum having a diameter of 6 inches in the circumferential direction, and one end of the metal film was fixed with a jig.
It is a method of pulling while peeling from the polyimide film at cm / min, and measuring the load required therefor. The results are shown in Tables 1 and 2.
【００３９】[0039]
【表１】 [Table 1]
【００４０】[0040]
【表２】 [Table 2]
【００４１】上表から明らかなように、アルカリ溶液処
理およびプラズマ処理を両方とも行った実施例１〜５で
は、アルカリ溶液処理を省略した比較例１、プラズマ処
理を省略した比較例２に比して、剥離強度が向上した。As is clear from the above table, in Examples 1 to 5 in which both the alkali solution treatment and the plasma treatment were performed, the comparison was made with Comparative Example 1 in which the alkali solution treatment was omitted and Comparative Example 2 in which the plasma treatment was omitted. The peel strength was improved.
【００４２】また、プラズマ処理時、下地層形成時およ
び導電層形成時のいずれか１工程においてフィルム基材
を加熱した実施例２，３，４では、これら処理時に全く
加熱を行わなかった比較例３に比して、剥離強度が向上
した。Further, in Examples 2, 3 and 4 in which the film base material was heated in any one of the steps of plasma treatment, formation of the underlayer and formation of the conductive layer, Comparative Examples in which heating was not performed at all during these treatments The peel strength was improved as compared with No. 3.
【００４３】さらに、プラズマ処理時、下地層形成時お
よび導電層形成時のいずれか１工程のみにおいてフィル
ム基材を加熱した実施例２，３，４と、これら処理時の
全てにおいてフィルム基材を加熱した実施例１とは、剥
離強度の差が小さく、いずれか１工程でフィルム基材を
加熱すれば十分であることがわかった。Furthermore, Examples 2, 3 and 4 in which the film base material was heated in only one of the steps of plasma treatment, formation of the underlayer and formation of the conductive layer, and the film base material in all of these treatments It was found that the difference in peel strength from the heated Example 1 was small, and it was sufficient to heat the film substrate in any one step.
【００４４】[0044]
【発明の効果】以上説明したように、本発明に係る導電
性積層フィルムおよびその製造方法によれば、ＢＰＤＡ
系ポリイミド製フィルム基材と導電層との間にクロム、
銀、パラジウム等の下地層を形成するとともに、フィル
ム基材の、下地層との接合面をＲａ値０．０２〜０．１
μｍの粗面にし、さらにこの粗面にポリイミドのフッ素
化層を形成しているので、従来接合が困難だったＢＰＤ
Ａ系ポリイミド製フィルム基材と金属膜の剥離強度を実
用可能な程度にまで高めることができる。As described above, according to the conductive laminated film and the method for producing the same of the present invention, the BPDA
Chrome between the polyimide-based film substrate and the conductive layer,
An underlayer of silver, palladium, or the like is formed, and the Ra value of the bonding surface of the film base material with the underlayer is 0.02 to 0.1.
Since it has a rough surface of μm and a fluorinated layer of polyimide is formed on this rough surface, it is difficult to bond the BPD.
The peel strength between the A-based polyimide film base material and the metal film can be increased to a practical level.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 大竹 重成 福島県会津若松市扇町128の７ 三菱伸銅 株式会社若松製作所内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Shigenari Otake 128-7 Ogimachi, Aizuwakamatsu, Fukushima Prefecture 7 Wakamatsu Works, Mitsubishi Shindoh Co., Ltd.
Claims (3)
無水物を使用したＢＰＤＡ系ポリイミド製のフィルム基
材と、このフィルム基材の少なくとも片面に形成された
クロム、銀、パラジウムから選択される１種または２種
以上の金属からなる下地層と、この下地層上に形成され
た銅または銅合金からなる導電層とを具備し、前記フィ
ルム基材の前記下地層との接合面は、表面粗さがＲａ値
０．０２〜０．１μｍの粗面とされ、この粗面には前記
ポリイミドのフッ素化層が形成され、このフッ素化層を
介して前記フィルム基材と前記下地層とが接合されてい
ることを特徴とする導電性積層フィルム。1. A BPDA-based polyimide film substrate using biphenyltetracarboxylic dianhydride as a raw material, and one or more selected from chromium, silver and palladium formed on at least one surface of the film substrate. An underlayer made of two or more kinds of metals, and a conductive layer made of copper or a copper alloy formed on the underlayer are provided. A rough surface having an Ra value of 0.02 to 0.1 μm is formed, and a fluorinated layer of the polyimide is formed on the rough surface, and the film base material and the underlayer are bonded via the fluorinated layer. A conductive laminated film characterized in that
ストロームであることを特徴とする請求項１記載の導電
性積層フィルム。2. The conductive laminated film according to claim 1, wherein the underlayer has a thickness of 10 to 100 angstroms.
電性積層フィルムの製造方法。 （ａ） 原料としてビフェニルテトラカルボン酸二無水
物を使用したＢＰＤＡ系ポリイミド製のフィルム基材の
少なくとも片面を、アルカリ溶液で処理することによ
り、Ｒａ値０．０２〜０．１μｍとなるように粗面化お
よび活性化する工程、 （ｂ） 前記フィルム基材の粗面化および活性化した表
面を、フッ素を含むガス中でプラズマ処理することによ
り、前記表面に前記ポリイミドのフッ素化層を形成する
工程、 （ｃ） 前記フッ素化層上に、クロム、銀、パラジウム
から選択される１種または２種以上の金属からなる下地
層を乾式めっき法によって形成する工程、 （ｄ） 前記下地層上に、銅または銅合金層を乾式めっ
き法によって形成する工程、 （ｅ） 前記（ｂ），（ｃ）および（ｄ）の少なくとも
１つの工程中に前記フィルム基材を１００〜４００℃に
加熱する工程。3. A method for producing a conductive laminated film, comprising the following steps. (A) By treating at least one side of a BPDA-based polyimide film substrate using biphenyltetracarboxylic dianhydride as a raw material with an alkaline solution, a Ra value of 0.02 to 0.1 μm is obtained. Surface-activating and activating, (b) plasma-treating the roughened and activated surface of the film substrate in a gas containing fluorine to form a fluorinated layer of the polyimide on the surface. Step (c) Forming an underlayer made of one or more metals selected from chromium, silver and palladium on the fluorinated layer by a dry plating method, (d) On the underlayer Forming a copper or copper alloy layer by a dry plating method, (e) forming the film substrate during at least one of the steps (b), (c) and (d). Heating to 00 to 400 ° C..
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4297427A JP3037519B2 (en) | 1992-11-06 | 1992-11-06 | Conductive laminated film and method for producing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4297427A JP3037519B2 (en) | 1992-11-06 | 1992-11-06 | Conductive laminated film and method for producing the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH06143491A true JPH06143491A (en) | 1994-05-24 |
| JP3037519B2 JP3037519B2 (en) | 2000-04-24 |
Family
ID=17846377
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4297427A Expired - Fee Related JP3037519B2 (en) | 1992-11-06 | 1992-11-06 | Conductive laminated film and method for producing the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3037519B2 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07330902A (en) * | 1994-06-13 | 1995-12-19 | Nec Corp | Production of fluorine-containing polyimide |
| JP2003011273A (en) * | 2001-07-02 | 2003-01-15 | Mitsubishi Shindoh Co Ltd | Metallized polyimide film |
| KR102469768B1 (en) * | 2021-10-26 | 2022-11-22 | 도레이첨단소재 주식회사 | Copper clad laminate film, electronic device including the same |
| KR102482417B1 (en) * | 2021-12-20 | 2022-12-28 | 도레이첨단소재 주식회사 | Copper clad laminate film, electronic device including the same |
-
1992
- 1992-11-06 JP JP4297427A patent/JP3037519B2/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07330902A (en) * | 1994-06-13 | 1995-12-19 | Nec Corp | Production of fluorine-containing polyimide |
| JP2003011273A (en) * | 2001-07-02 | 2003-01-15 | Mitsubishi Shindoh Co Ltd | Metallized polyimide film |
| KR102469768B1 (en) * | 2021-10-26 | 2022-11-22 | 도레이첨단소재 주식회사 | Copper clad laminate film, electronic device including the same |
| KR102482417B1 (en) * | 2021-12-20 | 2022-12-28 | 도레이첨단소재 주식회사 | Copper clad laminate film, electronic device including the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3037519B2 (en) | 2000-04-24 |
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