JPH06140477A - Hybrid integrated circuit - Google Patents

Hybrid integrated circuit

Info

Publication number
JPH06140477A
JPH06140477A JP4287585A JP28758592A JPH06140477A JP H06140477 A JPH06140477 A JP H06140477A JP 4287585 A JP4287585 A JP 4287585A JP 28758592 A JP28758592 A JP 28758592A JP H06140477 A JPH06140477 A JP H06140477A
Authority
JP
Japan
Prior art keywords
copper foil
integrated circuit
hybrid integrated
film
lead wire
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4287585A
Other languages
Japanese (ja)
Other versions
JP3354182B2 (en
Inventor
Toshimichi Naruse
俊道 成瀬
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP28758592A priority Critical patent/JP3354182B2/en
Publication of JPH06140477A publication Critical patent/JPH06140477A/en
Application granted granted Critical
Publication of JP3354182B2 publication Critical patent/JP3354182B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Abstract

PURPOSE:To obtain a highly reliable hybrid integrated circuit in which the bond strengths between a nickel plate film and aluminum lead wires are increased by connecting the lead wires to the surface of the nickel plate film in which crystal textures are formed in layers by ultrasonic bonding. CONSTITUTION:In this circuit, conducting paths 3 having desired shapes are formed of copper foil on a metallic substrate 1 with an insulating layer 2 in between and the paths 3 are connected to a semiconductor element through lead wires 6. In such a hybrid integrated circuit, the lead wires 6 are connected to the surface of a nickel plate film 5 in which crystal textures are formed in layers by ultrasonic bonding. For example, grooves 3A having depths of several mum are formed on the surface of the copper foil through, for example, a thermal pressing process in which the copper foil is stuck to the surface of the substrate with an adhesive resin layer 2 in between. In addition, the film 5 is formed by electrolytic organic bright nickel plating using a plating bath containing a primary and secondary brightening agents in order to form the crystal texture in the film 5 in layers.

Description

【発明の詳細な説明】Detailed Description of the Invention

【０００１】[0001]

【産業上の利用分野】本発明は、混成集積回路に関し、
特にニッケルメッキ表面にリード線を接続する混成集積
回路に関する。FIELD OF THE INVENTION This invention relates to hybrid integrated circuits,
In particular, it relates to a hybrid integrated circuit for connecting lead wires to a nickel-plated surface.

【０００２】[0002]

【従来の技術】従来、混成集積回路はセラミックスやガ
ラス基板上に抵抗体やトランジスターの如き回路部品を
付着したもの、あるいはアルミニウム基板上に絶縁層を
設け、この上に銅箔により回路を組み込む方式が一般的
である。これらの基板の上には、半田付けによる半導体
のダイボンディング、外部への端子接続、チップコンデ
ンサー等チップ部品の取付けがなされ、また半導体と銅
箔回路との接続はアルミニウム線による超音波ワイヤー
ボンディングによりなされている。2. Description of the Related Art Conventionally, a hybrid integrated circuit is a system in which circuit components such as resistors and transistors are attached to a ceramic or glass substrate, or an insulating layer is provided on an aluminum substrate, and a circuit is incorporated by a copper foil on the insulating layer. Is common. On these boards, semiconductor die bonding by soldering, external terminal connection, chip parts such as chip capacitors are attached, and the semiconductor and copper foil circuits are connected by aluminum wire ultrasonic wire bonding. Has been done.

【０００３】アルミニウム線が接続される銅箔回路上に
は、アルミニウム線の超音波ボンディングを確実に行う
ためにニッケルメッキ膜が形成される。かかる技術とし
ては、特公昭５２−３４６１号公報に記載されている。A nickel plating film is formed on the copper foil circuit to which the aluminum wire is connected in order to reliably perform ultrasonic bonding of the aluminum wire. Such a technique is described in Japanese Patent Publication No. 52-3461.

【０００４】[0004]

【発明が解決しようとする課題】従来の混成集積回路で
は、銅箔を回路として用いることから、その表面に残存
する耐触剤除去、半田とのぬれ性、Ａｇペーストとの密
着性および表面の酸化膜を除去するために製造工程中に
複数個の研摩工程が行われる。ニッケルメッキ膜を形成
する工程の前工程で銅箔表面上には約１〜５μｍ程度の
深さを有する溝が形成される。In the conventional hybrid integrated circuit, since copper foil is used as a circuit, removal of anti-corrosion agent remaining on the surface, wettability with solder, adhesiveness with Ag paste and surface resistance. A plurality of polishing steps are performed during the manufacturing process to remove the oxide film. A groove having a depth of about 1 to 5 μm is formed on the surface of the copper foil in a step before the step of forming the nickel plating film.

【０００５】銅箔上にニッケル電解メッキを行うと、図
４に示す如く、ニッケルメッキ膜（１１）の結晶組織は
柱状（縦方向）に形成されるために、その表面は粗面構
造で且つ銅箔（１２）の溝（１２Ａ）と対応しニッケル
メッキ膜（１１）にも溝（１１Ａ）が形成される。かか
る、ニッケルメッキ膜（１１）上にアルミニウムリード
線（１３）を超音波ボンディングするとリード線（１
３）はニッケルメッキ膜（１１）上に接続されるもの
の、そのボンディング接続強度が極めて低下する不具合
が発生した。When nickel electroplating is performed on a copper foil, as shown in FIG. 4, the crystal structure of the nickel plating film (11) is formed in a columnar shape (vertical direction), so that the surface has a rough structure. Grooves (11A) are also formed in the nickel plating film (11) corresponding to the grooves (12A) of the copper foil (12). When the aluminum lead wire (13) is ultrasonically bonded on the nickel plating film (11), the lead wire (1
Although 3) was connected on the nickel plated film (11), there was a problem that the bonding connection strength was extremely lowered.

【０００６】この理由は、超音波ボンディング装置のボ
ンディング・ツールから導出されたリード線（１３）を
ニッケルメッキ膜（１１）上に当接させた場合、リード
線（１３）がニッケルメッキ膜（１１）の溝（１１Ａ）
及びメッキ（１１）表面に形成された粗面部（１１Ｂ）
にくい込むことから摩擦抵抗が大きくなり、超音波振動
がニッケルメッキ膜（１１）とリード線（１３）との界
面に印加されず、例えばリード線（１３）の表面の酸化
膜を破ぶることなく接続されるためである。The reason for this is that when the lead wire (13) led out from the bonding tool of the ultrasonic bonding apparatus is brought into contact with the nickel plating film (11), the lead wire (13) becomes the nickel plating film (11). ) Groove (11A)
And rough surface part (11B) formed on the surface of the plating (11)
Friction resistance increases due to the difficulty of insertion, and ultrasonic vibration is not applied to the interface between the nickel plating film (11) and the lead wire (13), for example, without breaking the oxide film on the surface of the lead wire (13). This is because they are connected.

【０００７】上述した不具合を解消するためには、銅箔
に形成される溝の深さを浅く形成するように行えばよい
が、基板と銅箔とを接着する樹脂層を介してプレスする
際に銅箔表面に上述した深さの溝等が形成されることか
ら現状の工程では解決することができないものである。
この発明は上述した課題に鑑みてなされたもので、この
発明の目的は、ニッケルメッキ膜とアルミニウムリード
線との接続強度を向上させ信頼性の優れた混成集積回路
を提供する事である。In order to solve the above-mentioned inconvenience, the groove formed in the copper foil may be formed to have a shallow depth. However, when the substrate and the copper foil are pressed through a resin layer for bonding, Since the grooves and the like having the above-mentioned depth are formed on the surface of the copper foil, it cannot be solved by the current process.
The present invention has been made in view of the above-described problems, and an object of the present invention is to provide a hybrid integrated circuit which improves the connection strength between a nickel plating film and an aluminum lead wire and has excellent reliability.

【０００８】[0008]

【課題を解決するための手段】上述した課題を解決し、
目的を達成するため、この発明に係わる混成集積回路
は、金属基板上に絶縁層を介して銅箔により所望形状の
導電路が設けられ、その導電路と半導体素子がリード線
で接続された混成集積回路のリード線を結晶組織が層状
に形成されたニッケルメッキ表面に超音波ボンディング
接続したことを特徴としている。[Means for Solving the Problems]
To achieve the object, a hybrid integrated circuit according to the present invention is a hybrid integrated circuit in which a conductive path of a desired shape is provided by a copper foil on a metal substrate via an insulating layer, and the conductive path and a semiconductor element are connected by a lead wire. It is characterized in that the lead wire of the integrated circuit is ultrasonically bonded to a nickel-plated surface having a layered crystal structure.

【０００９】[0009]

【作用】以上の様に構成される混成集積回路において
は、結晶組織が層状に形成したニッケルメッキ膜上にリ
ード線を超音波接続することにより、ニッケルメッキ膜
表面が若干の凹凸を有して略平坦化されるために、超音
波ボンディング時におけるニッケルメッキ膜とリード線
の界面で発生する摩擦抵抗を最適値とすることが可能と
なる。その結果、ニッケルメッキ膜とリード線の接続強
度が保れた混成集積回路を得ることができる。In the hybrid integrated circuit configured as described above, the lead wire is ultrasonically connected to the nickel plating film having the layered crystal structure so that the surface of the nickel plating film has some irregularities. Since the surface is substantially flattened, the frictional resistance generated at the interface between the nickel plating film and the lead wire during ultrasonic bonding can be set to an optimum value. As a result, it is possible to obtain a hybrid integrated circuit in which the connection strength between the nickel plating film and the lead wire is maintained.

【００１０】[0010]

【実施例】以下に、図１〜図３に示した実施例に基づい
て本発明の混成集積回路を説明する。本発明の混成集積
回路は図１および図２に示す如く、金属基板（１）と、
この金属基板（１）上に絶縁樹脂層（２）を介して銅箔
より形成された導電路（３）と、この導電路（３）上に
固着される半導体素子（４）と、導電路（３）上に形成
されたニッケルメッキ膜（５）と、半導体素子（４）と
ニッケルメッキ膜（５）を接続するリード線（６）とか
ら構成される。DESCRIPTION OF THE PREFERRED EMBODIMENTS The hybrid integrated circuit of the present invention will be described below based on the embodiments shown in FIGS. As shown in FIGS. 1 and 2, the hybrid integrated circuit of the present invention includes a metal substrate (1),
A conductive path (3) formed of copper foil on the metal substrate (1) via an insulating resin layer (2), a semiconductor element (4) fixed on the conductive path (3), and a conductive path. (3) A nickel plating film (5) formed on the lead wire (6) for connecting the semiconductor element (4) and the nickel plating film (5).

【００１１】金属基板（１）はアルミニウムが用いら
れ、その一主面上にエポキシ系の接着樹脂層を介して約
３５μｍ〜１０５μｍ厚の銅箔が熱プレス工程によって
貼着される。このプレス工程によって、銅箔表面には数
μｍの溝（３Ａ）が形成されることになる。尚、基板
（１）としてアルミニウムを用いた場合には、その表面
を陽極酸化法によってアルマイト膜を形成してもよい。Aluminum is used for the metal substrate (1), and a copper foil having a thickness of about 35 μm to 105 μm is attached to one main surface of the metal substrate (1) via an epoxy adhesive resin layer by a hot pressing process. By this pressing step, a groove (3A) of several μm is formed on the surface of the copper foil. When aluminum is used as the substrate (1), an alumite film may be formed on the surface by anodization.

【００１２】基板（１）上に銅箔を貼着した後、ブラシ
等を用いてその表面が研摩され、銅箔表面に残存した耐
触剤およびその表面に形成された酸化膜が除去される。
この研摩工程により形成された溝（３Ａ）によって、後
述する半導体素子等の回路部品を固着する半田のぬれ性
が向上する。この際、銅箔表面には約１〜５μｍ程度の
溝（３Ａ）が形成される。研摩工程後の銅箔表面には電
解ニッケルメッキによって約１〜７μｍ程のニッケルメ
ッキ膜（５）が形成される。After sticking the copper foil on the substrate (1), its surface is polished with a brush or the like to remove the anticorrosive agent remaining on the surface of the copper foil and the oxide film formed on the surface. .
The groove (3A) formed by this polishing step improves the wettability of the solder for fixing circuit components such as semiconductor elements described later. At this time, a groove (3A) of about 1 to 5 μm is formed on the surface of the copper foil. After the polishing step, a nickel plating film (5) of about 1 to 7 μm is formed on the surface of the copper foil by electrolytic nickel plating.

【００１３】本発明の特徴とするところは、このニッケ
ルメッキ膜（５）の結晶組織の配列にある。即ち、ニッ
ケルメッキ膜（５）の結晶組織を層状組織に構成し、後
述するアルミニウムリード線（６）と接続させることで
ある。結晶組織を層状とするためにニッケルメッキ膜
（６）は電解有機光沢ニッケルメッキによって行われ
る。光沢ニッケルメッキは一般的にメッキ製品の耐蝕性
を向上させること、および美観性を向上させるために開
発されたメッキである。The feature of the present invention lies in the arrangement of the crystal structure of the nickel plating film (5). That is, the crystal structure of the nickel plating film (5) is formed into a layered structure and is connected to the aluminum lead wire (6) described later. The nickel plating film (6) is formed by electrolytic organic bright nickel plating in order to form a layered crystal structure. Bright nickel plating is generally a plating developed to improve the corrosion resistance of plated products and improve the aesthetic appearance.

【００１４】光沢メッキで結晶組織を完全な層状とする
ために、ニッケルメッキ浴に数ｇの１次および２次の２
種類の光沢剤が混入されている。１次光沢剤としてスル
ホンアミド、スルホンイミド、サッカリン等の有機物が
用いられ、２次光沢剤としてアセチレンおよびその誘導
体、アモチレンアルコール等の有機化合物が用いられ
る。In order to form a complete layered crystal structure by bright plating, a few g of the primary and secondary 2 are added to the nickel plating bath.
A type of brightener is mixed. Organic substances such as sulfonamide, sulfonimide, and saccharin are used as the primary brightening agent, and organic compounds such as acetylene and its derivatives and amothylene alcohol are used as the secondary brightening agent.

【００１５】１次光沢剤および２次光沢剤が混入された
メッキ浴で電解メッキされたニッケルメッキ膜（５）の
結晶組織は層状に形成され、図２に示す如く、銅箔の表
面に形成された溝（３Ａ）による凹凸による影響を受け
ることなく、略平坦に形成されることになる。実際に
は、ニッケルメッキ膜（５）の表面は略平坦でその平坦
面のところどころに銅箔に形成された溝（３Ａ）に対応
する領域（５Ａ）がくぼんで形成される。The crystal structure of the nickel-plated film (5) electrolytically plated in the plating bath mixed with the primary brightener and the secondary brightener is formed in layers and formed on the surface of the copper foil as shown in FIG. It is formed substantially flat without being affected by the unevenness due to the formed grooves (3A). Actually, the surface of the nickel-plated film (5) is substantially flat, and a region (5A) corresponding to the groove (3A) formed in the copper foil is concavely formed at some places of the flat surface.

【００１６】銅箔上にニッケルメッキ膜（５）を形成し
た後、その表面にレジスト膜を形成しエッチングして所
望形状の導電路（３）が形成される。尚、半導体素子
（４）、チップ抵抗等が固着される領域上のニッケルメ
ッキは選択的な除去される。導電路（３）上に半導体素
子（４）を固着し、その半導体素子（４）はニッケルメ
ッキ膜（５）が形成された導電路（３）と超音波ボンデ
ィングによりアルミニウムリード線（６）で接続され
る。After the nickel plating film (5) is formed on the copper foil, a resist film is formed on the surface of the nickel plating film (5) and the conductive film (3) having a desired shape is formed by etching. The nickel plating on the region where the semiconductor element (4), the chip resistor, etc. are fixed is selectively removed. A semiconductor element (4) is fixed on the conductive path (3), and the semiconductor element (4) is connected to the conductive path (3) on which the nickel plating film (5) is formed by an aluminum lead wire (6) by ultrasonic bonding. Connected.

【００１７】本願発明者の実験によれば、図３に示す如
く、ニッケルメッキ膜（５）の結晶組織を層状にしリー
ド線（６）を超音波ボンディング接続した方が引張強度
でかなり優れていることが判る。図３を見ると、結晶組
織を層状としない従来構造のものでは、ほとんどのもの
がリード線とニッケルメッキ膜との界面で剥離したのに
対し、本願発明の如き、結晶組織を層状としたもので
は、リード線とメッキ膜での界面剥離はほとんどなく、
全てリード線のネック切であった。According to an experiment conducted by the inventor of the present application, as shown in FIG. 3, the tensile strength is considerably superior when the lead wire (6) is ultrasonically bonded to the nickel plated film (5) having a layered crystal structure. I understand. As shown in FIG. 3, in the conventional structure in which the crystal structure is not layered, most of them are peeled off at the interface between the lead wire and the nickel plating film, whereas the crystal structure is layered as in the present invention. Then, there is almost no interfacial peeling between the lead wire and the plating film,
The lead wires were all cut off the neck.

【００１８】この理由は、ニッケルメッキ膜（５）の結
晶組織を層状としたことにより、メッキ膜表面が略平坦
状に形成され、かつ、適当なくぼみを有することから、
超音波ボンディング装置のボンディング・ツールから導
出されたリード線（６）をニッケルメッキ膜（５）上に
当接させた際、リード線（６）とニッケルメッキ膜
（５）の摩擦抵抗が超音波振動を印加するに最適の抵抗
となり超音波振動が確実にニッケルメッキ膜（５）とリ
ード線（６）との界面に印加され、リード線（６）の表
面の酸化膜を破ぶり、確実に超音波接続されるためであ
る。The reason for this is that since the nickel plating film (5) has a layered crystal structure, the surface of the plating film is formed to be substantially flat and has appropriate depressions.
When the lead wire (6) derived from the bonding tool of the ultrasonic bonding device is brought into contact with the nickel plating film (5), the friction resistance between the lead wire (6) and the nickel plating film (5) is ultrasonic. It becomes the optimum resistance for applying vibration, and ultrasonic vibration is surely applied to the interface between the nickel plating film (5) and the lead wire (6), and the oxide film on the surface of the lead wire (6) is broken and surely This is because it is connected by ultrasonic waves.

【００１９】[0019]

【発明の効果】以上に詳述した如く、本発明の混成集積
回路によれば、結晶組織が層状に形成したニッケルメッ
キ膜上にリード線を超音波接続することにより、ニッケ
ルメッキ膜表面が若干の凹凸を有して略平坦化されるた
めに、超音波ボンディング時におけるニッケルメッキ膜
とリード線の界面で発生する摩擦抵抗を最適値とするこ
とが可能となる。その結果、超音波ボンディング時に確
実に超音波振動がリード線とニッケルメッキ膜の界面に
印加され、ニッケルメッキ膜とリード線を確実に超音波
接続でき接続強度の優れた信頼性の高い混成集積回路を
提供することができる。As described above in detail, according to the hybrid integrated circuit of the present invention, the surface of the nickel-plated film can be slightly changed by ultrasonically connecting the lead wire to the nickel-plated film having the layered crystal structure. Since it has unevenness and is substantially flattened, the frictional resistance generated at the interface between the nickel plating film and the lead wire during ultrasonic bonding can be set to an optimum value. As a result, ultrasonic vibration is reliably applied to the interface between the lead wire and the nickel plating film during ultrasonic bonding, and the nickel plating film and the lead wire can be reliably connected by ultrasonic waves. A highly reliable hybrid integrated circuit with excellent connection strength. Can be provided.

【図面の簡単な説明】[Brief description of drawings]

【図１】本発明の混成集積回路を示す断面図である。FIG. 1 is a cross-sectional view showing a hybrid integrated circuit of the present invention.

【図２】本発明のニッケルメッキ膜部分を示す要部拡大
断面図である。FIG. 2 is an enlarged sectional view of an essential part showing a nickel plating film portion of the present invention.

【図３】ボンディング強度を示した特性図である。FIG. 3 is a characteristic diagram showing bonding strength.

【図４】従来型のニッケルメッキ膜部分を示す要部拡大
断面図である。FIG. 4 is an enlarged sectional view of an essential part showing a conventional nickel-plated film portion.

【符号の説明】[Explanation of symbols]

（１） 金属基板 （２） 絶縁樹脂層 （３） 導電路（銅箔） （４） 半導体素子 （５） ニッケルメッキ膜 （６） リード線 (1) Metal substrate (2) Insulating resin layer (3) Conductive path (copper foil) (4) Semiconductor element (5) Nickel plating film (6) Lead wire

Claims (2)

【特許請求の範囲】[Claims] 【請求項１】 金属基板上に絶縁層を介して銅箔により
所望形状の導電路が設けられ、その導電路と半導体素子
がリード線で接続された混成集積回路において、 前記リード線は超音波ボンディングで且つ結晶組織が層
状に形成されたニッケルメッキ表面に接続されたことを
特徴とする混成集積回路。1. A hybrid integrated circuit in which a conductive path of a desired shape is provided by a copper foil on a metal substrate via an insulating layer, and the conductive path and a semiconductor element are connected by a lead wire, wherein the lead wire is an ultrasonic wave. A hybrid integrated circuit characterized by being connected to a nickel-plated surface having a layered crystal structure by bonding. 【請求項２】 金属基板上に絶縁層を介して銅箔により
所望形状の導電路が設けられ、その導電路と半導体素子
がリード線で接続された混成集積回路において、 前記リード線は超音波ボンディングで且つ表面が約１〜
５μｍの凹凸を有する前記導電路上に結晶組織が層状と
なるように形成されたニッケルメッキ表面に接続された
ことを特徴とする混成集積回路。2. A hybrid integrated circuit in which a conductive path having a desired shape is provided by a copper foil on a metal substrate via an insulating layer, and the conductive path and a semiconductor element are connected by a lead wire, wherein the lead wire is an ultrasonic wave. Bonding and the surface is about 1
A hybrid integrated circuit characterized in that it is connected to a nickel-plated surface having a layered crystal structure on the conductive path having irregularities of 5 μm.
JP28758592A 1992-10-26 1992-10-26 Hybrid integrated circuit Expired - Lifetime JP3354182B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP28758592A JP3354182B2 (en) 1992-10-26 1992-10-26 Hybrid integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP28758592A JP3354182B2 (en) 1992-10-26 1992-10-26 Hybrid integrated circuit

Publications (2)

Publication Number Publication Date
JPH06140477A true JPH06140477A (en) 1994-05-20
JP3354182B2 JP3354182B2 (en) 2002-12-09

Family

ID=17719209

Family Applications (1)

Application Number Title Priority Date Filing Date
JP28758592A Expired - Lifetime JP3354182B2 (en) 1992-10-26 1992-10-26 Hybrid integrated circuit

Country Status (1)

Country Link
JP (1) JP3354182B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009076703A (en) * 2007-09-21 2009-04-09 Fuji Electric Device Technology Co Ltd Semiconductor apparatus
WO2011046036A1 (en) * 2009-10-14 2011-04-21 株式会社小糸製作所 Circuit device and production method therefor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009076703A (en) * 2007-09-21 2009-04-09 Fuji Electric Device Technology Co Ltd Semiconductor apparatus
WO2011046036A1 (en) * 2009-10-14 2011-04-21 株式会社小糸製作所 Circuit device and production method therefor

Also Published As

Publication number Publication date
JP3354182B2 (en) 2002-12-09

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