JPH06138189A - Semiconductor device - Google Patents

Abstract

PURPOSE:To reduce the number of terminals of a semiconductor device by using the same terminal for an internal circuit and a TEG part. CONSTITUTION:A connection selection circuit 6 including Field Effect Transistors Q1-Q8 and an inverter A and a selection signal input terminal 7 for inputting a control signal are provided for an internal circuit 1 and a TEG part 2, a terminal 4 for input for inputting a signal for operation of the internal circuit and a terminal 5 for output for taking out the operation result are commonly used as a signal input terminal for measuring the TEG part 2 and a terminal for output for taking out measurement result, and then the connection of the internal circuit and the TEG part to the terminals 4 and 5 for input and output is selected depending on whether the selection signal is either H or L level. It is not necessary to use separate terminal for each of the internal circuit and the TEG part as compared with before, thus eliminating the terminals for one input and output for the internal circuit and the TEG part and hence reducing the total number of terminals.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device, and in particular to a TEG (test cell) provided only for measuring electrical characteristics, apart from an internal circuit for performing the original function of the device.
The present invention relates to a semiconductor device having an element group).

[0002]

2. Description of the Related Art As shown in the plan view of FIG. 3, a conventional semiconductor device having the above-mentioned TEG portion has an internal circuit 1 provided with an arithmetic circuit for performing a logical operation and a memory device for storing information. And input terminals 14 and 14 for inputting a signal from the outside to the internal circuit, output terminals 15 and 15, and especially provided for measuring electrical characteristics of elements such as transistors included in a semiconductor device. TEG part 2 and T
The measurement signal input terminals 16 and 16 to the EG part 2 and the output terminals 17 and 17 are formed on a semiconductor substrate. In order to operate the internal circuit 1 of this semiconductor device, an appropriate signal generator is used to input the input terminal 1
A signal for operation is input from No. 4, and the calculation result and stored information in the internal circuit are taken out from the output terminal 15. Further, when measuring the electrical characteristics of the TEG portion 2, a measurement signal was input to the input terminal 16 and the measurement result of the element in the TEG portion was taken out from the output terminal 17.

[0003]

In the operation of the internal circuit and the measurement of the electrical characteristics in the TEG section, different input terminals and output terminals are used.
Therefore, there is a problem that the total number of terminals of the device is increased and the substrate area is increased.

[0004]

In order to solve the above problems, according to the present invention, an input terminal and an output terminal are provided commonly to an internal circuit and a TEG portion formed on one semiconductor substrate,
Further, a connection selection circuit for connecting the internal circuit of this terminal to the TEG portion is provided, and the input terminal and the output terminal are connected only to the internal circuit when operating the internal circuit and only to the TEG portion when measuring the TEG portion. I am trying to do it.

[0005]

The present invention will be described below with reference to the drawings. FIG. 1 is a plan view of an embodiment of the present invention. In the figure, 1
Is an internal circuit including an arithmetic circuit and an information storage device for performing the original function of this semiconductor device, and 2 is a TEG provided especially for measuring the electrical characteristics of elements such as transistors constituting this semiconductor device. It is a department. Also,
Field-effect transistors Q1 to Q4 having drains and sources connected between the internal circuit 1 and the input terminals 4 and 4 and the output terminals 5 and 5 provided on the periphery of the device substrate,
Similarly, input terminals 4 and 4 and output terminals 5 and 5, and T
Field effect transistors Q5 to Q8 whose drains and sources are connected to the EG section 2 and transistors Q1 to Q4
Connection selection for selectively connecting the internal circuit 1 and the TEG unit 2 to the input and output terminal groups by the inverter A in which the common gate of the transistors Q5 to Q8 is connected to the output side. The circuit 6 is configured.
A selection signal input terminal 7 for controlling the connection selection circuit is drawn from the common gate of the transistors Q1 and Q4 of the connection selection circuit 6.

Next, the operation of this example will be described. First, when the internal circuit 1 is in operation, an H level signal is input to the selection signal input terminal 7, and the transistors Q1 to Q4
Is turned on, and the transistors Q5 to Q8 whose common gate is at the L level by the inverter A are turned off and the internal circuit 1 is selected. The calculation result of the calculation circuit of the internal circuit corresponding to the input to the input terminals 4 and 4 connected to an appropriate signal source is displayed on the display device or the like connected to the output terminals 5 and 5.

When the selection signal input terminal 7 is at L level, T
The EG section 2 is selected, and the electrical characteristics of the TEG section element are measured by the measurement signal input to the input terminal 4.

FIG. 2 is a plan view of the second embodiment of the present invention.
In the figure, comparing this example with the example 1 of FIG. 1, in this example, there are two groups of TEG parts 2 and 3 with respect to FIG.
Correspondingly, the field effect transistor Q9 for connection selection
~ Q12 is newly added, and the selection target is three of the internal circuit and the two TEG units, and in order to select one of them, two NOR gates G1 and G2 and the inverter A1 are selected. The selection signal circuit 8 is provided, and the selection signal input terminal 9 for inputting the control signal to the selection signal circuit 8 is increased.

In this embodiment, when the selection signal input terminals 7 and 9 are both at the H level, the internal circuit 1 is selected, and when the selection signal input terminals 7 and 9 are both at the L level, the TEG section 2 is selected and selected. When the signal input terminal 7 is at L level and the selection signal input terminal 9 is at H level, the TEG unit 3 is selected.

[0010]

As described above, according to the present invention, the internal circuit and the TEG section are connected to the input and output terminals by selecting either one by using the connection selection circuit. Since the same terminal is used for the circuit and the TEG section, the number of terminals can be reduced as compared with the case where separate terminals are conventionally provided, and naturally the board area can be reduced and the device can be downsized. To be

[Brief description of drawings]

FIG. 1 is a plan view of a first embodiment of the present invention.

FIG. 2 is a plan view of a second embodiment of the present invention.

FIG. 3 is a plan view of a conventional semiconductor device.

[Explanation of symbols]

 1 Internal circuit 2,3 TEG section 4 Input terminal 5 Output terminal 6 Connection selection circuit 7,9 Selection signal input terminal 8 Selection signal circuit

Claims (2)

[Claims] 1. An internal circuit including an arithmetic circuit and an information storage device for performing the original function of the apparatus, a group of TEGs of one or a plurality of groups consisting of an element group dedicated to electrical characteristic measurement, the internal circuit and the TEG. Input and output terminals to the internal circuit and the TEG section, and the input and output terminals for the internal circuit and the TEG section are independent of each other in order to share the input and output terminals with the internal circuit and the TEG section. A semiconductor device comprising: a connection selection circuit connected to the connection selection circuit; and a selection signal input terminal for inputting a control signal to the connection selection circuit. 2. The connection selection circuit includes a field effect transistor provided between the input and output terminals, an internal circuit and a TEG section, and a selection signal input to the selection signal input terminal. To the gate of the transistor by the internal circuit and one or more TE groups.
2. The semiconductor device according to claim 1, wherein the semiconductor device is formed of a selection signal circuit for applying a selection signal for turning on only the transistor of each G section.