JPH0613722A - Metal base circuit board - Google Patents

Metal base circuit board

Info

Publication number
JPH0613722A
JPH0613722A JP20614991A JP20614991A JPH0613722A JP H0613722 A JPH0613722 A JP H0613722A JP 20614991 A JP20614991 A JP 20614991A JP 20614991 A JP20614991 A JP 20614991A JP H0613722 A JPH0613722 A JP H0613722A
Authority
JP
Japan
Prior art keywords
insulating layer
circuit board
aluminum
metal
foil
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP20614991A
Other languages
Japanese (ja)
Other versions
JP2904621B2 (en
Inventor
Makoto Fukuda
誠 福田
Naoki Yonemura
直己 米村
Chiharu Watanabe
千春 渡辺
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denka Co Ltd
Original Assignee
Denki Kagaku Kogyo KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Denki Kagaku Kogyo KK filed Critical Denki Kagaku Kogyo KK
Priority to JP20614991A priority Critical patent/JP2904621B2/en
Publication of JPH0613722A publication Critical patent/JPH0613722A/en
Application granted granted Critical
Publication of JP2904621B2 publication Critical patent/JP2904621B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Parts Printed On Printed Circuit Boards (AREA)
  • Laminated Bodies (AREA)
  • Insulated Metal Substrates For Printed Circuits (AREA)

Abstract

PURPOSE:To obtain a metal base circuit board having improved withstand voltage characteristics under a high temperature by a method wherein, in a circuit board formed by laminating aluminum/copper clad foil on a metal board through the intermediary of an insulating layer, the quantity of chloride ions in the resin to be used as an insulating layer and the quantity of sodium in an inorganic component are set at the prescribed quantity or smaller. CONSTITUTION:A circuit board is formed by laminating an aluminum/copper clad foil 10, having a substitute layer 5 as an intermediate layer through the intermediary of an insulating layer 2, on a base metal board with the surface of aluminum foil 4 facing upward. Aluminum and an aluminum alloy, copper, iron, stainless steel, Invar type material and the like are used for the base board 1. Also, the insulating layer 2 is composed of an inorganic component and an organic component, and the quantity of sodium, having high ionic coupling, which is contained in the inorganic component is set at 1000ppm or smaller. Also, the quantity of chloride ions contained in resin component is set at 1000ppm or smaller. When the above-mentioned quantity exceeds 1000ppm, it becomes the cause of acceleration of deterioration in insulation.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、 高温下において絶縁層
の信頼性が高く電気機器、通信機及び自動車等に用いら
れる金属ベ−ス回路基板に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a metal base circuit board which has a highly reliable insulating layer at high temperatures and is used in electric equipment, communication equipment, automobiles and the like.

【0002】[0002]

【従来の技術】従来の金属ベ−ス回路基板においては、
特に半導体を実装した回路が高温下で、 高い耐電圧特性
を要求されることがなかったことから、 特に回路基板の
絶縁層に用いる樹脂及び無機充填剤に対して、 特に不純
物を限定し、 かつ定量化した検討は試みられてはいなか
った。
2. Description of the Related Art In a conventional metal-based circuit board,
In particular, since the circuit on which the semiconductor is mounted is not required to have high withstand voltage characteristics at high temperature, impurities are particularly limited especially for the resin and the inorganic filler used for the insulating layer of the circuit board, and No quantified study has been attempted.

【0003】[0003]

【発明が解決しようとする課題】そのために、従来の金
属ベ−ス回路基板においては、 高温下、直流電圧下にお
いて絶縁耐力が低いという問題があった。すなわち、 高
温下での直流、 交流半波もしくは矩形波等の極性不変電
圧においては、イオン性不純物の移動がおこり、耐電圧
が低下するという問題があった。
Therefore, the conventional metal-based circuit board has a problem that the dielectric strength is low under high temperature and DC voltage. That is, there is a problem that the ionic impurities move and the withstand voltage is lowered in a polarity invariant voltage such as DC, AC half-wave or rectangular wave at high temperature.

【0004】本発明は、 かかる欠点を解決したものであ
り、 絶縁層として用いる樹脂中の塩化物イオン量及び無
機成分中のナトリウム量を特定量以下とすることによ
り、 高温下での耐電圧特性が向上した金属ベ−ス回路基
板を提供するものである。
The present invention has solved the above-mentioned drawbacks, and by setting the chloride ion amount in the resin used as the insulating layer and the sodium amount in the inorganic component to be not more than a specific amount, the withstand voltage characteristic at high temperature is improved. To provide a metal-based circuit board having improved characteristics.

【0005】[0005]

【課題を解決するための手段】すなわち、 本発明は 1.金属基板に絶縁層を介してアルミニウム/銅クラッ
ド箔を積層した回路基板において、 前記絶縁層中の無機
成分中に含有するナトリウム量が1,000ppm以下であるこ
とを特徴とする金属ベ−ス回路基板 2.金属基板に絶縁層を介してアルミニウム/銅クラッ
ド箔を積層した回路基板において、 前記絶縁層中の樹脂
成分中に含有する塩化物イオン量が1,000ppm以下である
ことを特徴とする金属ベ−ス回路基板及び 3.金属基板に絶縁層を介してアルミニウム/銅クラッ
ド箔を積層した回路基板において、 前記絶縁層中の無機
成分中に含有するナトリウム量が1,000ppm以下であり、
かつ樹脂成分中に含有する塩化物イオン量が1,000ppm以
下であることを特徴とする金属ベ−ス回路基板 とするものであり、 金属ベ−ス上の絶縁層中のイオン性
不純物を低減化することにより、高温下での耐電圧特性
の高い金属ベ−ス回路基板を提供するものである。
That is, the present invention is as follows. A circuit board in which an aluminum / copper clad foil is laminated on a metal substrate via an insulating layer, wherein the amount of sodium contained in the inorganic component in the insulating layer is 1,000 ppm or less. 2. A circuit board in which an aluminum / copper clad foil is laminated on a metal substrate via an insulating layer, wherein the amount of chloride ions contained in the resin component in the insulating layer is 1,000 ppm or less. Circuit board and 3. In a circuit board in which an aluminum / copper clad foil is laminated on a metal substrate via an insulating layer, the amount of sodium contained in the inorganic component in the insulating layer is 1,000 ppm or less,
In addition, the amount of chloride ions contained in the resin component is 1,000 ppm or less, which is a metal base circuit board, which reduces ionic impurities in the insulating layer on the metal base. By doing so, a metal-based circuit board having high withstand voltage characteristics at high temperature is provided.

【0006】[0006]

【作用および実施例】以下図面により本発明を詳細に説
明する。図1は、 本発明の回路基板であり、 ベ−ス金属
基板1に絶縁層2を介して置換層5を中間層としたアル
ミニウム/銅クラッド箔10のアルミニウム箔4面を上
面とした回路基板の断面図である。
The present invention will be described in detail below with reference to the drawings. FIG. 1 is a circuit board of the present invention, in which a base metal substrate 1 is an aluminum / copper clad foil 10 having a replacement layer 5 as an intermediate layer with an insulating layer 2 in between, and an aluminum foil 4 surface of which is an upper surface. FIG.

【0007】また図2は、 絶縁層2に積層するアルミニ
ウム/銅クラッド箔10の銅箔3面を上面とした回路基
板の断面図である。
FIG. 2 is a cross-sectional view of a circuit board with the copper foil 3 surface of the aluminum / copper clad foil 10 laminated on the insulating layer 2 as the top surface.

【0008】さらに図3は、 本発明の回路基板に半導体
等を実装した混成集積回路の断面図である。
Further, FIG. 3 is a sectional view of a hybrid integrated circuit in which a semiconductor or the like is mounted on the circuit board of the present invention.

【0009】本発明に用いるベ−ス金属基板1として
は、良熱伝導性を有する一般に肉厚が0.5 mm〜3.0 m
mであるアルミニウムおよびアルミニウム合金、銅、
鉄、 ステンレス系及びインバ−系等が用いられる。
The base metal substrate 1 used in the present invention has good thermal conductivity and generally has a wall thickness of 0.5 mm to 3.0 m.
m and aluminum and aluminum alloys, copper,
Iron, stainless steel, invar, etc. are used.

【0010】また絶縁層2としては、絶縁不良が生じな
い程度であれば厚みは特に制限はなく、 好ましくは20μ
mから500 μmで、 成分は無機成分及び有機成分の両成
分からなり、たとえば各種セラミックス、無機粉体を含
有する高分子樹脂絶縁層、ガラス繊維を含有する高分子
樹脂絶縁層である。前記無機粉体としては、アルミナ、
ベリリヤ、ボロンナイトライド、マグネシア、シリカ、
窒化ケイ素及び窒化アルミニウム等が好ましく、高分子
樹脂としては、エポキシ樹脂、フェノール樹脂、ポリイ
ミド樹脂及び各種エンジニアプラスチックが用いられ
る。
The thickness of the insulating layer 2 is not particularly limited as long as it does not cause insulation failure, and is preferably 20 μm.
m to 500 μm, the component is composed of both inorganic and organic components and is, for example, various ceramics, a polymer resin insulating layer containing inorganic powder, or a polymer resin insulating layer containing glass fiber. As the inorganic powder, alumina,
Beryllia, boron nitride, magnesia, silica,
Silicon nitride, aluminum nitride and the like are preferable, and as the polymer resin, epoxy resin, phenol resin, polyimide resin and various engineered plastics are used.

【0011】そして本発明の絶縁層2に用いる無機成分
中に含まれるイオン性結合の大きいナトリウム量は、1,
000ppm以下であり、 また樹脂成分中に含まれる塩化物イ
オン量は、1,000ppm以下のものを用いる。すなわち絶縁
層2に用いる無機成分中に含まれるナトリウム量及び樹
脂成分中に含まれる塩化物イオン量がそれぞれ1,000ppm
を越えると、 高温下で絶縁層2に極性が一定の電圧が加
わると、多量のイオン性結合を有するナトリウムまたは
塩化物イオン不純物が移動し始め、 絶縁劣化を加速する
原因となる。
The amount of sodium having a large ionic bond contained in the inorganic component used in the insulating layer 2 of the present invention is 1,
The amount of chloride ion contained in the resin component is 1,000 ppm or less. That is, the amount of sodium contained in the inorganic component used in the insulating layer 2 and the amount of chloride ion contained in the resin component are each 1,000 ppm.
If the voltage exceeds the range, a voltage having a constant polarity is applied to the insulating layer 2 at a high temperature, and a large amount of sodium or chloride ion impurities having an ionic bond starts to move, which causes deterioration of insulation.

【0012】さらに本発明に用いるアルミニウム/銅ク
ラッド箔10は、アルミニウムにニッケル、亜鉛または
錫を介して銅メッキしたもの、圧延法によるアルミニウ
ム/銅接合箔等があげられる。そしてアルミニウム/銅
クラッド箔10の肉厚は、0.5 μm〜1mmの範囲が一
般に用いられる。
Further, the aluminum / copper clad foil 10 used in the present invention includes aluminum plated with nickel via nickel, zinc or tin, aluminum / copper bonding foil by a rolling method, and the like. The thickness of the aluminum / copper clad foil 10 is generally in the range of 0.5 μm to 1 mm.

【0013】次に本発明の金属ベース回路基板は、クラ
ッド箔10のアルミニウム箔4及び銅箔3をエッチング
して任意のパターンを形成し、銅箔からなる導電回路1
2やワイヤーボンディング用パッド11として用いるこ
とができる。この後チップ部品である半導体8 等を搭載
し、 必要に応じてアルミニウム線もしくは金線を用いた
ワイヤー9でボンディングを行い回路部品を作製するこ
とができる。以下実施例により本発明を詳細に説明す
る。
Next, in the metal base circuit board of the present invention, the aluminum foil 4 and the copper foil 3 of the clad foil 10 are etched to form an arbitrary pattern, and the conductive circuit 1 made of the copper foil is formed.
2 and the pad 11 for wire bonding. After that, a semiconductor 8 or the like which is a chip component is mounted, and if necessary, bonding is performed with a wire 9 using an aluminum wire or a gold wire to manufacture a circuit component. The present invention is described in detail below with reference to examples.

【0014】実施例1 1.5 mm厚のアルミニウム基板に絶縁層として150 μm
厚のアルミナ粉含有エポキシ樹脂を張り合わせた。この
ときのエポキシ樹脂中の塩化物イオン量の含有量は、10
ppm で、 またアルミナ粉中のナトリウム量が、10,000pp
m のものを用いた。つぎに亜鉛を置換層とした15μm
厚のアルミニウム箔に35μm厚の電解銅箔を張り合わせ
たアルミニウム/銅クラッド箔を使用して、 エッチング
により導電回路及びボンディングパッド部パタ−ンの形
成を行い、 チップ部品を搭載した後ワイヤ−ボンディン
グを行った。このようにできた製品10個について125
℃、 直流電圧1,000V(パタ−ン側+)をかけた結果、 平
均絶縁破壊時間は10,000時間であった。
Example 1 An aluminum substrate having a thickness of 1.5 mm was used as an insulating layer with a thickness of 150 μm.
A thick epoxy resin containing alumina powder was laminated. The content of chloride ion in the epoxy resin at this time is 10
ppm, and the amount of sodium in alumina powder is 10,000 pp
I used m. Next, 15 μm using zinc as a substitution layer
Using an aluminum / copper clad foil made by laminating a 35 μm thick electrolytic copper foil on a thick aluminum foil, the conductive circuit and bonding pad pattern are formed by etching, and after the chip parts are mounted, wire bonding is performed. went. 125 of 10 products made in this way
As a result of applying a DC voltage of 1,000 V (+ on the pattern side) at ℃, the average dielectric breakdown time was 10,000 hours.

【0015】実施例2 実施例1で用いた基板と同様な構成で、 エポキシ樹脂中
に含まれる塩化物イオン量が、10,000ppm で、 またアル
ミナ粉中に含まれるナトリウム量が10ppm であるの絶縁
層の基板を用いた。この製品10個について125 ℃、 直流
電圧1,000V(パタ−ン側+)をかけた結果、 平均絶縁破
壊時間は1,000 時間であった。
Example 2 Insulation having the same constitution as that of the substrate used in Example 1, in which the amount of chloride ions contained in the epoxy resin is 10,000 ppm and the amount of sodium contained in the alumina powder is 10 ppm. A layer of substrate was used. The average dielectric breakdown time was 1,000 hours as a result of applying a DC voltage of 1,000 V (pattern side +) to these 10 products at 125 ° C.

【0016】実施例3 実施例1で用いた基板と同様な構成で、エポキシ樹脂中
に含まれる塩化物イオン量が、10ppm で、 またアルミナ
粉中に含まれるナトリウム量が、10pmである絶縁層の基
板を用いた。この製品10個について125 ℃、 直流電圧1,
000V(パタ−ン側+)をかけた結果、 平均絶縁破壊時間
は100,000 時間であった。
Example 3 An insulating layer having the same structure as the substrate used in Example 1 and containing 10 ppm of chloride ions contained in the epoxy resin and 10 pm of sodium contained in the alumina powder. The substrate of was used. About 10 of this product, 125 ℃, DC voltage 1,
As a result of applying 000V (pattern side +), the average dielectric breakdown time was 100,000 hours.

【0017】比較例1 実施例1で用いた基板と同様な構成で、 エポキシ樹脂中
に含まれる塩化物イオン量が10,000ppm で、 またアルミ
ナ粉中に含まれるナトリウム量が10,000ppm であるの絶
縁層の基板を用いた。この製品10個について125 ℃、 直
流電圧1,000V(パタ−ン側+)をかけた結果、 平均絶縁
破壊時間は100 時間であった。
Comparative Example 1 Insulation having the same structure as that of the substrate used in Example 1, in which the amount of chloride ions contained in the epoxy resin is 10,000 ppm and the amount of sodium contained in the alumina powder is 10,000 ppm. A layer of substrate was used. The average dielectric breakdown time was 100 hours as a result of applying a DC voltage of 1,000 V (pattern side +) to these 10 products at 125 ° C.

【0018】[0018]

【発明の効果】以上のとおり本発明は、 絶縁層として使
用する樹脂及び無機成分中のイオン性不純物の量を低減
化することにより、 高温下での絶縁破壊時間を伸ばすこ
とができ、 半導体搭載回路として電気機器、 通信機及び
自動車等に用いられ、従来からの問題点を解決すること
ができるものである。
INDUSTRIAL APPLICABILITY As described above, according to the present invention, by reducing the amount of ionic impurities in the resin and the inorganic component used as the insulating layer, it is possible to extend the dielectric breakdown time at high temperature, and to mount semiconductors. It is used as a circuit in electric equipment, communication devices, automobiles, etc., and can solve the problems that have been encountered in the past.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の回路基板でアルミニウム/銅クラッド
箔のアルミニウム箔を上面とした断面図である。
FIG. 1 is a cross-sectional view of a circuit board of the present invention with an aluminum foil of an aluminum / copper clad foil as an upper surface.

【図2】本発明の回路基板でアルミニウム/銅クラッド
箔の銅箔を上面とした断面図である。
FIG. 2 is a cross-sectional view of the circuit board of the present invention with the copper foil of aluminum / copper clad foil as an upper surface.

【図3】本発明の回路基板に導電回路を形成し、 半導体
等を実装した半導体搭載混成集積回路の断面図である。
FIG. 3 is a cross-sectional view of a semiconductor-mounted hybrid integrated circuit in which a conductive circuit is formed on the circuit board of the present invention and a semiconductor or the like is mounted.

【符号の説明】[Explanation of symbols]

1 ベ−ス金属金属 2 絶縁層 3 銅箔 4 アルミニウム箔 5 亜鉛置換層 6 半田 7 ヒ−トスプレッダ− 8 半導体 9 ワイヤ− 10 アルミニウム/銅クラッド箔 11 パッド 12 導電回路 1 Base Metal Metal 2 Insulation Layer 3 Copper Foil 4 Aluminum Foil 5 Zinc Substitution Layer 6 Solder 7 Heat Spreader 8 Semiconductor 9 Wire 10 Aluminum / Copper Clad Foil 11 Pad 12 Conductive Circuit

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】 金属基板に絶縁層を介してアルミニウム
/銅クラッド箔を積層した回路基板において、 前記絶縁
層中の無機成分中に含有するナトリウム量が1,000ppm以
下であることを特徴とする金属ベ−ス回路基板。
1. A circuit board in which an aluminum / copper clad foil is laminated on a metal substrate via an insulating layer, wherein the amount of sodium contained in the inorganic component in the insulating layer is 1,000 ppm or less. Base circuit board.
【請求項2】 金属基板に絶縁層を介してアルミニウム
/銅クラッド箔を積層した回路基板において、 前記絶縁
層中の樹脂成分中に含有する塩化物イオン量が1,000ppm
以下であることを特徴とする金属ベ−ス回路基板。
2. A circuit board in which an aluminum / copper clad foil is laminated on a metal board via an insulating layer, wherein the amount of chloride ions contained in the resin component in the insulating layer is 1,000 ppm.
A metal-based circuit board characterized in that:
【請求項3】 金属基板に絶縁層を介してアルミニウム
/銅クラッド箔を積層した回路基板において、 前記絶縁
層中の無機成分中に含有するナトリウム量が1,000ppm以
下であり、 かつ樹脂成分中に含有する塩化物イオン量が
1,000ppm以下であることを特徴とする金属ベ−ス回路基
板。
3. A circuit board in which an aluminum / copper clad foil is laminated on a metal substrate via an insulating layer, wherein the amount of sodium contained in the inorganic component of the insulating layer is 1,000 ppm or less, and the resin component is contained in the resin component. The amount of chloride ion contained
Metal-based circuit board characterized by 1,000ppm or less.
JP20614991A 1991-07-24 1991-07-24 Metal base circuit board Expired - Lifetime JP2904621B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20614991A JP2904621B2 (en) 1991-07-24 1991-07-24 Metal base circuit board

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20614991A JP2904621B2 (en) 1991-07-24 1991-07-24 Metal base circuit board

Publications (2)

Publication Number Publication Date
JPH0613722A true JPH0613722A (en) 1994-01-21
JP2904621B2 JP2904621B2 (en) 1999-06-14

Family

ID=16518609

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20614991A Expired - Lifetime JP2904621B2 (en) 1991-07-24 1991-07-24 Metal base circuit board

Country Status (1)

Country Link
JP (1) JP2904621B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006303082A (en) * 2005-04-19 2006-11-02 Denki Kagaku Kogyo Kk Metal base circuit board, manufacturing method thereof, and hybrid integrated circuit using the same
JP2013122029A (en) * 2011-12-12 2013-06-20 Sumitomo Bakelite Co Ltd Filler, composition for forming insulating layer, film for forming insulating layer, and substrate

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006303082A (en) * 2005-04-19 2006-11-02 Denki Kagaku Kogyo Kk Metal base circuit board, manufacturing method thereof, and hybrid integrated circuit using the same
JP2013122029A (en) * 2011-12-12 2013-06-20 Sumitomo Bakelite Co Ltd Filler, composition for forming insulating layer, film for forming insulating layer, and substrate

Also Published As

Publication number Publication date
JP2904621B2 (en) 1999-06-14

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