JPH0613448A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPH0613448A JPH0613448A JP19337492A JP19337492A JPH0613448A JP H0613448 A JPH0613448 A JP H0613448A JP 19337492 A JP19337492 A JP 19337492A JP 19337492 A JP19337492 A JP 19337492A JP H0613448 A JPH0613448 A JP H0613448A
- Authority
- JP
- Japan
- Prior art keywords
- test
- semiconductor device
- circuit section
- wafer
- power supply
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、半導体装置に関し、特
に半導体ウェハ上での特性試験時に有効なテスト専用回
路を持つ半導体装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device, and more particularly to a semiconductor device having a test-dedicated circuit effective for a characteristic test on a semiconductor wafer.
【0002】[0002]
【従来の技術】半導体装置の製造工程において、ペレッ
タイズ工程の前に個々のチップに関する特性試験、即ち
ウェハテストが行われる。図3は、ウェハテスト用の専
用回路を備えた従来の半導体装置のブロック図である。
この例では、本体回路部1と試験専用回路部2とが、電
源端子VCC、接地端子GND間に並列に接続されてい
る。2. Description of the Related Art In a semiconductor device manufacturing process, a characteristic test for individual chips, that is, a wafer test is performed before a pelletizing process. FIG. 3 is a block diagram of a conventional semiconductor device having a dedicated circuit for wafer test.
In this example, the main body circuit portion 1 and the test dedicated circuit portion 2 are connected in parallel between the power supply terminal V CC and the ground terminal GND.
【0003】試験専用回路部2には、本体回路部1の状
態を設定するための回路、その状態を読み出すための回
路、本体回路部のゲート遅延時間を間接的に測定するた
めのリングオシレータ等が設けられている。The test-dedicated circuit section 2 includes a circuit for setting the state of the main body circuit section 1, a circuit for reading the state, a ring oscillator for indirectly measuring the gate delay time of the main body circuit section, and the like. Is provided.
【0004】試験専用回路部2は、ウェハテストの終了
後には不要となる回路であるが、図3に示した半導体装
置では、通常動作時にも試験専用回路部2に電流が流れ
るため、特にECL系半導体装置等では無駄に消費され
る電力が大きくなる。そこで、通常動作時での消費電力
を抑えるために、図4に示すように、テスト用電源端子
VTESTを介してウェハテスト時のみ試験専用回路部2に
給電を行うようにした半導体装置がある。The test-dedicated circuit section 2 is a circuit that becomes unnecessary after the completion of the wafer test. In the semiconductor device shown in FIG. 3, however, a current flows through the test-dedicated circuit section 2 even during normal operation. In a semiconductor device such as a semiconductor device, the power consumed wastefully increases. Therefore, in order to suppress the power consumption during the normal operation, as shown in FIG. 4, there is a semiconductor device in which power is supplied to the test dedicated circuit section 2 through the test power supply terminal V TEST only during the wafer test. .
【0005】この回路では、ウェハテスト時には探針に
より電源端子VCCおよびテスト用電源端子VTESTを介し
て本体回路部1および試験専用回路部2の双方に給電を
行って所定のテストを行う。電源端子VCCは外部端子に
接続されるが、テスト用電源端子は外部端子には接続さ
れない。即ち、通常動作時には本体回路部1のみが給電
を受ける。In this circuit, during the wafer test, power is supplied to both the main body circuit section 1 and the test dedicated circuit section 2 by the probe through the power supply terminal V CC and the test power supply terminal V TEST to perform a predetermined test. The power supply terminal V CC is connected to the external terminal, but the test power supply terminal is not connected to the external terminal. That is, during normal operation, only the main body circuit section 1 receives power.
【0006】[0006]
【発明が解決しようとする課題】上述した第1の従来例
では、試験専用回路に通常動作時に常時電流が流れるた
め半導体装置全体の消費電力が大きくなるという欠点が
あった。図4に示した第2の従来例では、消費電力は抑
制できるもののウェハテストのために専用のパッドV
TESTが必要となるという欠点があり、また、テスト時に
より多くの探針を用いなければならないという問題点も
あった。The above-mentioned first conventional example has a drawback in that the power consumption of the entire semiconductor device increases because a current always flows through the test-dedicated circuit during normal operation. In the second conventional example shown in FIG. 4, the power consumption can be suppressed, but the dedicated pad V for the wafer test is used.
There is a drawback that TEST is required, and there is also a problem that more probes have to be used during the test.
【0007】[0007]
【課題を解決するための手段】本発明の半導体装置は、
本体回路部と、ウェハテスト時のみに使用される試験専
用回路部とが同一の電源端子を共有しており、前記試験
専用回路部と前記電源端子との間には両者間の接続を遮
断することのできる素子が接続されたものである。The semiconductor device of the present invention comprises:
The main body circuit section and the test dedicated circuit section used only during the wafer test share the same power supply terminal, and the connection between the test dedicated circuit section and the power supply terminal is cut off. The devices that can be connected are connected.
【0008】[0008]
【実施例】次に、本発明の実施例について図面を参照し
て説明する。図1は本発明の第1の実施例を示すブロッ
ク図である。本実施例の半導体装置は、本体回路部1と
試験専用回路部2とを共通の電源端子VCCとグランド端
子GNDとの間に並列に接続し、そして、電源端子VCC
と試験専用回路部との間にレーザ光等により切断可能な
ヒューズ素子Fを挿入したものである。ここで、試験専
用回路部2には、ゲートの遅延時間測定用のリングオシ
レータ、半導体装置の本体回路内の内部状態を設定する
ための回路、本体回路の状態を読み出すための回路等が
含まれている。Embodiments of the present invention will now be described with reference to the drawings. FIG. 1 is a block diagram showing a first embodiment of the present invention. In the semiconductor device of the present embodiment, the main body circuit section 1 and the test dedicated circuit section 2 are connected in parallel between the common power supply terminal V CC and the ground terminal GND, and the power supply terminal V CC is connected.
A fuse element F that can be cut by a laser beam or the like is inserted between the test-only circuit section and the circuit. Here, the test-dedicated circuit unit 2 includes a ring oscillator for measuring the delay time of the gate, a circuit for setting an internal state in the body circuit of the semiconductor device, a circuit for reading the state of the body circuit, and the like. ing.
【0009】次に、本実施例装置の動作について説明す
る。半導体装置の製造工程でウェハ選別試験を行う際に
は、ヒューズ素子Fは導通状態あり、探針により電源端
子VCCに電源電圧を印加すると、本体回路部1及び試験
専用回路部2とは共に動作状態となる。ここで、半導体
装置の本体回路部単独の動作試験、および試験専用回路
部2を用いた半導体装置の特性確認の試験を行う。ウェ
ハテスト完了後にレーザ光によってヒューズ素子Fの切
断を行う。Next, the operation of the apparatus of this embodiment will be described. When a wafer selection test is performed in the semiconductor device manufacturing process, the fuse element F is in a conductive state, and when a power supply voltage is applied to the power supply terminal V CC by the probe, both the main body circuit section 1 and the test dedicated circuit section 2 It becomes an operating state. Here, an operation test of the main body circuit section of the semiconductor device alone and a characteristic confirmation test of the semiconductor device using the test dedicated circuit section 2 are performed. After the wafer test is completed, the fuse element F is cut by the laser beam.
【0010】図2は、本発明の第2の実施例を示すブロ
ック図である。この実施例では、第1の実施例と異なり
試験専用回路部2はトランジスタTRを介して電源端子
VCCに接続され、トランジスタTRのベースにヒューズ
素子Fが接続されている。本実施例では、本体回路部の
電源電流が大きく、ヒューズ素子の電流容量が小さい場
合に、ヒューズ素子の面積や使用本数が増えるのを抑え
ることができる。FIG. 2 is a block diagram showing a second embodiment of the present invention. In this embodiment, unlike the first embodiment, the dedicated test circuit section 2 is connected to the power supply terminal V CC via the transistor TR, and the fuse element F is connected to the base of the transistor TR. In this embodiment, when the power supply current of the main body circuit portion is large and the current capacity of the fuse element is small, it is possible to suppress an increase in the area and the number of fuse elements to be used.
【0011】[0011]
【発明の効果】以上説明したように、本発明の半導体装
置は、本体回路部が接続されている電源端子に、接続を
断つことのできる素子を介して試験専用回路部を接続し
たものであるので、本発明によれば、通常使用時での消
費電力を削減できるとともに、試験専用回路部における
端子数を減らすことができまたテスト時に必要となる探
針数も少なくすることができる。As described above, in the semiconductor device of the present invention, the test-dedicated circuit section is connected to the power supply terminal to which the main body circuit section is connected via the element capable of being disconnected. Therefore, according to the present invention, it is possible to reduce power consumption during normal use, reduce the number of terminals in the test-dedicated circuit section, and reduce the number of probes required during the test.
【図1】本発明の第1の実施例を示すブロック図。FIG. 1 is a block diagram showing a first embodiment of the present invention.
【図2】本発明の第2の実施例を示すブロック図。FIG. 2 is a block diagram showing a second embodiment of the present invention.
【図3】第1の従来例のブロック図。FIG. 3 is a block diagram of a first conventional example.
【図4】第2の従来例のブロック図。FIG. 4 is a block diagram of a second conventional example.
1 本体回路部 2 試験専用回路部 F ヒューズ VCC 電源端子 GND グランド端子 VTEST テスト用電源端子1 Main unit circuit 2 Test-dedicated circuit F Fuse V CC Power supply terminal GND Ground terminal V TEST Test power supply terminal
Claims (1)
路と、正規の本体回路とが同一電源端子に接続され、か
つ該電源端子と前記試験専用回路の間には、両者間の接
続を断つことのできる素子が接続されていることを特徴
とする半導体装置。1. A test-dedicated circuit used in a wafer test and a regular main body circuit are connected to the same power supply terminal, and the connection between the power-supply terminal and the test-dedicated circuit is cut off. A semiconductor device in which elements capable of being connected are connected.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19337492A JPH0613448A (en) | 1992-06-26 | 1992-06-26 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19337492A JPH0613448A (en) | 1992-06-26 | 1992-06-26 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0613448A true JPH0613448A (en) | 1994-01-21 |
Family
ID=16306859
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP19337492A Pending JPH0613448A (en) | 1992-06-26 | 1992-06-26 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0613448A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100790819B1 (en) * | 2006-07-20 | 2008-01-02 | 삼성전자주식회사 | Semiconductor integrated circuit and method for fabricating the same |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61139045A (en) * | 1984-12-12 | 1986-06-26 | Hitachi Ltd | Semiconductor device |
-
1992
- 1992-06-26 JP JP19337492A patent/JPH0613448A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61139045A (en) * | 1984-12-12 | 1986-06-26 | Hitachi Ltd | Semiconductor device |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100790819B1 (en) * | 2006-07-20 | 2008-01-02 | 삼성전자주식회사 | Semiconductor integrated circuit and method for fabricating the same |
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Legal Events
Date | Code | Title | Description |
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A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 19981119 |