JPH06132424A - Switching semiconductor device - Google Patents

Switching semiconductor device

Info

Publication number
JPH06132424A
JPH06132424A JP27758692A JP27758692A JPH06132424A JP H06132424 A JPH06132424 A JP H06132424A JP 27758692 A JP27758692 A JP 27758692A JP 27758692 A JP27758692 A JP 27758692A JP H06132424 A JPH06132424 A JP H06132424A
Authority
JP
Japan
Prior art keywords
switching
metal case
semiconductor device
noise
switching semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP27758692A
Other languages
Japanese (ja)
Inventor
Toshihiro Arai
利浩 新井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP27758692A priority Critical patent/JPH06132424A/en
Publication of JPH06132424A publication Critical patent/JPH06132424A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

PURPOSE:To sharply reduce a noise generated by a switching operation without spoiling the intrinsic switching characteristic of a semiconductor device. CONSTITUTION:This semiconductor device is constituted in such a way that the assembly of a switching semiconductor element 1 and a lead frame 2 is sealed with a molding resin 3, that its circumference is covered with a shielding metal case 4 and that a grounding terminal 4a is installed in the metal case. A noise generated by a switching operation is made to escape to the ground side through an electrostatic capacity by the metal case and through the metal case so as to prevent that the noise is propagated to the circumference.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、スイッチング電源,イ
ンバータなどに用いるスイッチングパワーデバイスを対
象としたスイッチング半導体装置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a switching semiconductor device intended for a switching power device used in a switching power supply, an inverter and the like.

【0002】[0002]

【従来の技術】スイッチング電源,PWM制御インバー
タなどでは小型,高効率化を押し進めるために、スイッ
チング素子にパワートランジスタを用いたスイッチング
パワーデバイスが広く採用されている。また、かかるス
イッチングパワーデバイスは、高機能化とともにスイッ
チング周波数がますます高くなる傾向にあるが、一方で
は、スイッチングパワーデバイスのスイッチング動作に
伴って高周波ノイズの発生し、これが誘導ノイズとして
周囲に伝播して周辺回路,周辺機器にノイズ障害を及ぼ
すことが知られており、しかもスイッチング周波数の高
まりに伴いノイズ障害の影響も大きくなることから、そ
のノイズ低減対策がスイッチング半導体装置に課せられ
た重要課題の一つとなっている。
2. Description of the Related Art In switching power supplies, PWM control inverters and the like, switching power devices using power transistors as switching elements are widely adopted in order to promote miniaturization and high efficiency. In addition, such switching power devices tend to have higher switching frequencies with higher functionality, but on the other hand, high-frequency noise is generated with the switching operation of the switching power devices and propagates as inductive noise to the surroundings. It is known that the noise disturbance affects peripheral circuits and peripheral devices, and the influence of the noise disturbance increases with the increase of switching frequency. Therefore, the noise reduction measure is one of the important issues imposed on switching semiconductor devices. It is one.

【0003】一方、スイッチング半導体装置のノイズ低
減対策として、スイッチングパワーデバイスのリード端
子にフェライトビーズ(チョークコイルの一種)を挿入
したり、ゲート抵抗を接続して調整するなどしたノイズ
低減策が従来より知られている。
On the other hand, as a noise reduction measure for a switching semiconductor device, noise reduction measures such as inserting ferrite beads (a kind of choke coil) into the lead terminal of a switching power device or connecting a gate resistor for adjustment have been adopted. Are known.

【0004】[0004]

【発明が解決しようとする課題】ところで、前記した従
来のノイズ低減対策では、部品点数,組立,調整工数が
増えるのみならず、スイッチングパワーデバイスのスイ
ッチング特性の面でスイッチング周波数が低く抑えられ
たり、スイッチング損失の増加を招くといった問題があ
る。
By the way, in the above-mentioned conventional noise reduction measures, not only the number of parts, assembly and adjustment man-hours increase, but also the switching frequency can be suppressed low in terms of the switching characteristics of the switching power device, There is a problem that it causes an increase in switching loss.

【0005】本発明は上記の点にかんがみなされたもの
であり、その目的は本来のスイッチング特性を損なうこ
となしに、スイッチング動作に伴って発生するノイズの
大幅な低減化が図れるようにしたスイッチング半導体装
置を提供することにある。
The present invention has been made in view of the above points, and an object of the present invention is to provide a switching semiconductor which is capable of significantly reducing noise generated by a switching operation without impairing the original switching characteristics. To provide a device.

【0006】[0006]

【課題を解決するための手段】上記目的を達成するた
め、本発明のスイッチング半導体装置は、スイッチング
半導体素子とフレームとの組立体を樹脂で封止するとと
もに、その周囲にシールド用金属ケースを被覆して構成
するものとする。また、前記構成の実施態様として、金
属ケースにグランド端子を設けた構成がある。
To achieve the above object, in a switching semiconductor device of the present invention, an assembly of a switching semiconductor element and a frame is sealed with resin, and a shield metal case is coated around the assembly. Shall be configured. Further, as an embodiment of the above configuration, there is a configuration in which a ground terminal is provided in the metal case.

【0007】[0007]

【作用】上記の構成によれば、スイッチング半導体素子
と金属ケースとの間には封止樹脂を誘電体とする静電容
量が形成され、ここで金属ケースをグランドに接地する
ことにより金属ケースはゼロ電位(大地電位)に保持さ
れる。したがってスイッチング素子のスイッチング動作
により発生したノイズは前記静電容量,金属ケースを介
してグランド側に逃げる。つまり、金属ケースが電磁シ
ールドとして機能するので、特にフェライトビーズなど
のノイズ抑制部品などを使用することなく、スイッチン
グ半導体装置から周辺に伝播するノイズを大幅に低減で
きる。なお、該金属ケースは外来ノイズに対する電磁シ
ールドとしても機能し、スイッチング素子を外来ノイズ
から保護するように働く。
According to the above structure, an electrostatic capacitance having a sealing resin as a dielectric is formed between the switching semiconductor element and the metal case, and the metal case is grounded here so that the metal case is It is held at zero potential (ground potential). Therefore, the noise generated by the switching operation of the switching element escapes to the ground side through the capacitance and the metal case. That is, since the metal case functions as an electromagnetic shield, the noise propagating from the switching semiconductor device to the surroundings can be significantly reduced without using noise suppressing parts such as ferrite beads. The metal case also functions as an electromagnetic shield against external noise, and acts to protect the switching element from external noise.

【0008】また、金属ケースに設けたグランド端子
は、スイッチング半導体装置をスイッチング電源などに
組み込む際のアース端子として使用される。
The ground terminal provided on the metal case is used as a ground terminal when the switching semiconductor device is incorporated in a switching power supply or the like.

【0009】[0009]

【実施例】以下、本発明の実施例を図面に基づいて説明
する。図1,図2において、1はパワートランジスタな
どのスイッチング半導体素子、2はリードフレーム、2
aはリードフレーム2から引出した外部リード、3はス
イッチング半導体素子1とリードフレーム2の組立体周
囲を封止したモールド樹脂、4はモールド樹脂3の周囲
を取り囲んだシールド用の金属ケースであり、該金属ケ
ース4には外部リード2aと同方向にグランド端子4a
が引出してある。そして、当該スイッチング半導体装置
をスイッチング電源,インバータなどのプリント配線板
に実装する際に同時にグランド端子4aがグランド側に
接続される。
Embodiments of the present invention will be described below with reference to the drawings. 1 and 2, 1 is a switching semiconductor element such as a power transistor, 2 is a lead frame, 2
a is an external lead drawn from the lead frame 2, 3 is a molding resin that seals the periphery of the assembly of the switching semiconductor element 1 and the lead frame 2, and 4 is a metal case for shielding that surrounds the periphery of the molding resin 3, The metal case 4 has a ground terminal 4a in the same direction as the external lead 2a.
Has been pulled out. Then, when the switching semiconductor device is mounted on a printed wiring board such as a switching power supply and an inverter, the ground terminal 4a is simultaneously connected to the ground side.

【0010】[0010]

【発明の効果】以上述べたように、本発明によれば、ス
イッチング半導体素子とフレームとの組立体を樹脂で封
止するとともに、その周囲にシールド用金属ケースを被
覆して構成したことにより、高いスイッチング特性を維
持しつつ、しかもスイッチング動作に伴って発生するノ
イズをグランド側に逃がして周辺に伝播するのを防止す
ることができるとともに、金属ケースは外来ノイズに対
するシールドとしても機能してスイッチング半導体素子
を保護する。これにより、従来装置におけるフェライト
ビーズ,ゲート抵抗などの部品を省ぶくことができ、安
価で、ノイズに対する信頼性の高いスイッチング半導体
装置が提供できる。
As described above, according to the present invention, the assembly of the switching semiconductor element and the frame is sealed with the resin, and the metal case for shielding is covered around the assembly, whereby While maintaining high switching characteristics, it is possible to prevent noise generated by switching operation from escaping to the ground side and propagating to the surrounding area, and the metal case also functions as a shield against external noise. Protect the element. As a result, parts such as ferrite beads and gate resistance in the conventional device can be omitted, and a switching semiconductor device that is inexpensive and highly reliable against noise can be provided.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の実施例によるスイッチング半導体装置
の構成図
FIG. 1 is a configuration diagram of a switching semiconductor device according to an embodiment of the present invention.

【図2】図1の断面図FIG. 2 is a sectional view of FIG.

【符号の説明】[Explanation of symbols]

1 スイッチング半導体素子 2 リードフレーム 2a 外部リード 3 モールド樹脂 4 金属ケース 4a グランド端子 1 Switching semiconductor element 2 Lead frame 2a External lead 3 Mold resin 4 Metal case 4a Ground terminal

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】スイッチング半導体素子とフレームとの組
立体を樹脂で封止するとともに、その周囲にシールド用
金属ケースを被覆して構成したことを特徴とするスイッ
チング半導体装置。
1. A switching semiconductor device characterized in that an assembly of a switching semiconductor element and a frame is sealed with a resin, and a metal case for shielding is covered around the assembly.
【請求項2】請求項1記載のスイッチング半導体装置に
おいて、金属ケースにグランド端子を設けたことを特徴
とするスイッチング半導体装置。
2. The switching semiconductor device according to claim 1, wherein the metal case is provided with a ground terminal.
JP27758692A 1992-10-16 1992-10-16 Switching semiconductor device Pending JPH06132424A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP27758692A JPH06132424A (en) 1992-10-16 1992-10-16 Switching semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP27758692A JPH06132424A (en) 1992-10-16 1992-10-16 Switching semiconductor device

Publications (1)

Publication Number Publication Date
JPH06132424A true JPH06132424A (en) 1994-05-13

Family

ID=17585532

Family Applications (1)

Application Number Title Priority Date Filing Date
JP27758692A Pending JPH06132424A (en) 1992-10-16 1992-10-16 Switching semiconductor device

Country Status (1)

Country Link
JP (1) JPH06132424A (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06254633A (en) * 1993-03-08 1994-09-13 Uchinuki:Kk Punching machine
JP2000091475A (en) * 1998-09-09 2000-03-31 Shindengen Electric Mfg Co Ltd Semiconductor device
JP2001083174A (en) * 1999-09-14 2001-03-30 Matsushita Electric Ind Co Ltd Acceleration sensor
WO2002063695A1 (en) * 2001-02-02 2002-08-15 Mitsubishi Denki Kabushiki Kaisha Insulated-gate bipolar transistor, semiconductor device, method of manufacturing insulated-gate bipolar transistor, and method of manufacturing semiconductor device
US6538319B2 (en) 1997-09-02 2003-03-25 Oki Electric Industry Co., Ltd. Semiconductor device
US7205574B2 (en) 2003-10-16 2007-04-17 Sharp Kabushiki Kaisha Optical semiconductor device
WO2010147202A1 (en) * 2009-06-19 2010-12-23 株式会社安川電機 Power converter
CN102460694A (en) * 2009-06-19 2012-05-16 株式会社安川电机 Power conversion device
JP2018117256A (en) * 2017-01-18 2018-07-26 新電元工業株式会社 Clamp type semiconductor device and switching power supply device

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06254633A (en) * 1993-03-08 1994-09-13 Uchinuki:Kk Punching machine
KR100404159B1 (en) * 1997-09-02 2004-02-05 오끼 덴끼 고오교 가부시끼가이샤 Semiconductor device
US6538319B2 (en) 1997-09-02 2003-03-25 Oki Electric Industry Co., Ltd. Semiconductor device
JP2000091475A (en) * 1998-09-09 2000-03-31 Shindengen Electric Mfg Co Ltd Semiconductor device
JP2001083174A (en) * 1999-09-14 2001-03-30 Matsushita Electric Ind Co Ltd Acceleration sensor
US6734497B2 (en) 2001-02-02 2004-05-11 Mitsubishi Denki Kabushiki Kaisha Insulated gate bipolar transistor, semiconductor device, method of manufacturing insulated-gate bipolar transistor, and method of manufacturing semiconductor device
WO2002063695A1 (en) * 2001-02-02 2002-08-15 Mitsubishi Denki Kabushiki Kaisha Insulated-gate bipolar transistor, semiconductor device, method of manufacturing insulated-gate bipolar transistor, and method of manufacturing semiconductor device
JPWO2002063695A1 (en) * 2001-02-02 2004-06-10 三菱電機株式会社 Insulated gate bipolar transistor, semiconductor device, method of manufacturing insulated gate bipolar transistor, and method of manufacturing semiconductor device
JP4657578B2 (en) * 2001-02-02 2011-03-23 三菱電機株式会社 Insulated gate bipolar transistor, semiconductor device, method for manufacturing insulated gate bipolar transistor, and method for manufacturing semiconductor device
US7205574B2 (en) 2003-10-16 2007-04-17 Sharp Kabushiki Kaisha Optical semiconductor device
WO2010147202A1 (en) * 2009-06-19 2010-12-23 株式会社安川電機 Power converter
CN102460694A (en) * 2009-06-19 2012-05-16 株式会社安川电机 Power conversion device
JP2018117256A (en) * 2017-01-18 2018-07-26 新電元工業株式会社 Clamp type semiconductor device and switching power supply device

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