JPH0612808B2 - Method of manufacturing solid-state imaging device - Google Patents
Method of manufacturing solid-state imaging deviceInfo
- Publication number
- JPH0612808B2 JPH0612808B2 JP59145425A JP14542584A JPH0612808B2 JP H0612808 B2 JPH0612808 B2 JP H0612808B2 JP 59145425 A JP59145425 A JP 59145425A JP 14542584 A JP14542584 A JP 14542584A JP H0612808 B2 JPH0612808 B2 JP H0612808B2
- Authority
- JP
- Japan
- Prior art keywords
- photosensitive resin
- imaging device
- state imaging
- photoelectric conversion
- solid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000003384 imaging method Methods 0.000 title claims description 12
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 239000011347 resin Substances 0.000 claims description 41
- 229920005989 resin Polymers 0.000 claims description 41
- 238000006243 chemical reaction Methods 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 9
- 239000004065 semiconductor Substances 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 3
- 239000011159 matrix material Substances 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
Description
【発明の詳細な説明】 （産業上の利用分野） 本発明は固体撮像装置の製造方法に関するものである。TECHNICAL FIELD The present invention relates to a method for manufacturing a solid-state imaging device.
（従来技術） 一般に固体撮像装置は半導体基板主面に光電変換部及び
信号読み出し部を有するため、光電変換に寄与する領域
は全体面積の２０〜５０％に制限されている。この欠点
を解決する手段として、固体撮像装置とレンズアレーを
組合せ入射光を光電変換領域に集光する方法が提案され
ている（特開昭54-17620、特開昭57-9180、特開昭59-12
2193）。また本願発明者によって国際固体装置会議（IE
EE International Electron Devices Meeting，1983年
１２月開催）に於いて「集積化樹脂レンズアレーによる
高感度ＩＬ−ＣＣＤイメージセンサ」（A High Photose
nsitivity IL-CCD Image Sensor with Monolithic Resi
n Lens Array）と題してＣＣＤイメージセンサ上に集積
化された樹脂レンズアレーが発表された。(Prior Art) In general, a solid-state imaging device has a photoelectric conversion unit and a signal reading unit on the main surface of a semiconductor substrate, so that the region contributing to photoelectric conversion is limited to 20 to 50% of the entire area. As a means for solving this drawback, a method of combining a solid-state image pickup device and a lens array to collect incident light in a photoelectric conversion region has been proposed (JP-A-54-17620, JP-A-57-9180, JP-A-57-9180). 59-12
2193). In addition, the inventor of the present application
EE International Electron Devices Meeting, held in December 1983) "High-sensitivity IL-CCD image sensor with integrated resin lens array" (A High Photose
nsitivity IL-CCD Image Sensor with Monolithic Resi
n Lens Array), a resin lens array integrated on a CCD image sensor was announced.
この樹脂レンズアレーの製造方法を第１図に示す。第１
図はインターライン転送方式ＣＣＤイメージセンサに樹
脂レンズアレーを適用した場合のブロセスを説明する断
面模式図を示す、まず、第１図(a)に示すように、通常
の技術で製作したインターライン転送ＣＣＤイメージセ
ンサのシリコンウェハー１０の上に透明な第１の感光性
樹脂層１１を塗布する。１２はＣＣＤからなる信号読み
出し部、１３は信号読み出し部への光の漏れ込みを防止
する遮光層、１４は光ダイオードである。光電変換に寄
与する領域以外の第１の感光性樹脂層１１は、露光およ
び現象の方法により除去される。その後、第１の感光性
樹脂層１１上に第２の感光性樹脂を塗布する。次に、同
図(b)に示すように露光・現象により、光ダイオード列
に対応してストライプ状に第２の感光性樹脂１５を残
す。その後、第２の感光性樹脂１５の軟化温度以上で熱
処理する。第２の感光性樹脂のストライプパターンは熱
流動によって同図(c)に示すように凸状のレンズ１６に
なる。しかし、隣接するストライプパターンが熱流動に
よって接触すると、熱流動の横方向広がりは急速に進
み、接触した部分の断面形状はほぼ平坦になる。The manufacturing method of this resin lens array is shown in FIG. First
The figure shows a schematic sectional view explaining the process when a resin lens array is applied to an interline transfer type CCD image sensor. First, as shown in FIG. A transparent first photosensitive resin layer 11 is applied onto a silicon wafer 10 of a CCD image sensor. Reference numeral 12 is a signal reading section formed of a CCD, 13 is a light shielding layer for preventing light from leaking into the signal reading section, and 14 is a photodiode. The first photosensitive resin layer 11 other than the region contributing to photoelectric conversion is removed by the method of exposure and phenomenon. Then, the second photosensitive resin is applied onto the first photosensitive resin layer 11. Next, as shown in FIG. 3B, the second photosensitive resin 15 is left in stripes corresponding to the photodiode rows by exposure and phenomenon. After that, heat treatment is performed at the softening temperature of the second photosensitive resin 15 or higher. The stripe pattern of the second photosensitive resin becomes a convex lens 16 as shown in FIG. 6C by heat flow. However, when adjacent stripe patterns are brought into contact with each other by heat flow, the lateral spread of heat flow rapidly progresses, and the cross-sectional shape of the contacted portion becomes substantially flat.
第２図(a)，(b)は従来行なわれていた第２の感光性樹脂
パターンの平面概念図と熱流動後の平面概念図を示す。
第２図(a)に示すようにストライプパターンの終端部１
９が矩形での形状では、熱流動後終端部が太くなり第２
図(b)のようにパターンの一部が接触する。ストライプ
パターンが一部接触すると前述のように熱流動は急速に
進み凸レンズ形状の変形部分２０の範囲は広くなる。2 (a) and 2 (b) are a conceptual plan view of a second photosensitive resin pattern which has been conventionally performed and a conceptual plan view after thermal flow.
As shown in FIG. 2 (a), the end portion 1 of the stripe pattern
If the shape of 9 is a rectangle, the end part becomes thicker after heat flow
As shown in Figure (b), part of the pattern contacts. When the stripe patterns partially contact with each other, the heat flow rapidly proceeds as described above, and the range of the deformed portion 20 having the convex lens shape becomes wide.
（発明の目的） 本発明の目的は、上記の欠点をなくし、樹脂レンズアレ
ーを用いた高感度な固体撮像装置の製造方法を提供する
ことにある。(Object of the Invention) It is an object of the present invention to provide a method for manufacturing a high-sensitivity solid-state imaging device using a resin lens array without the above drawbacks.
（発明の構成） 本発明による固体撮像装置の製造方法は、半導体基板上
に光電変換素子群を任意の行列に配置し、列方向に配置
する前記光電変換素子群の各列間に遮光された信号読み
出し群を配置し、前記光電変換素子群と信号読み出し群
を第１の感光性樹脂で被い、前記第１の感光性樹脂をそ
の軟化温度以上で熱処理し、その後、前記第１の感光性
樹脂上に第２の感光性樹脂を被着し、露光・現象により
各列方向に配置されている前記光電変換素子群の列に対
応するように前記第２の感光性樹脂をストライプ状に残
し、その後、前記第２の感光性樹脂の軟化温度以上で熱
処理することにより凸状のレンズアレーを形成する固体
撮像装置の製造方法において、ストライプ状に残す前記
第２の感光性樹脂の終端部の間隔を中心部の間隔より広
くすることを特徴とする方法である。(Structure of the Invention) In the method for manufacturing a solid-state imaging device according to the present invention, photoelectric conversion element groups are arranged in an arbitrary matrix on a semiconductor substrate, and light is shielded between columns of the photoelectric conversion element groups arranged in the column direction. A signal readout group is arranged, the photoelectric conversion element group and the signal readout group are covered with a first photosensitive resin, the first photosensitive resin is heat-treated at a softening temperature or higher, and then the first photosensitive resin is applied. The second photosensitive resin is deposited on the photosensitive resin, and the second photosensitive resin is formed into stripes so as to correspond to the rows of the photoelectric conversion element groups arranged in each row direction by exposure / phenomenon. In the method of manufacturing a solid-state image pickup device, wherein a convex lens array is formed by heat-treating the second photosensitive resin at a temperature higher than the softening temperature of the second photosensitive resin. Wider than the center The method is characterized by
（実施例） 次に図面を用いて本発明を説明する。第３図は本発明の
一実施例を説明するための図で、従来例の第２図に対応
する平面概念図である。(Example) Next, this invention is demonstrated using drawing. FIG. 3 is a diagram for explaining one embodiment of the present invention, and is a conceptual plan view corresponding to FIG. 2 of a conventional example.
第２図(a)に示した従来例と、第３図(a)に示した本発明
の実施例との相違は、ストライプパターンの終端歩２１
の先端が細くなっていることである。換言すれば、終端
部のストライプパターンのギャップが広がるように形成
されている。このため第３図(b)のように、熱流動後の
第２の感光性樹脂のパターン１７′は終端部が接触する
ことがない。The difference between the conventional example shown in FIG. 2A and the embodiment of the present invention shown in FIG.
The tip of is thin. In other words, it is formed so that the gap of the stripe pattern at the terminal end is widened. Therefore, as shown in FIG. 3 (b), the end portions of the second photosensitive resin pattern 17 'after thermal flow do not come into contact with each other.
第４図は本発明の他の実施例における第２の感光性樹脂
のパターン１７″で、第２の感光性樹脂の終端部２２は
任意の曲率をもったゆるやかな形状になっている。この
様な形状でも熱処理後に終端部が接触することはない。FIG. 4 shows a second photosensitive resin pattern 17 ″ according to another embodiment of the present invention, in which the end portion 22 of the second photosensitive resin has a gentle shape with an arbitrary curvature. Even with such a shape, the end portions do not come into contact with each other after the heat treatment.
本発明は第２の感光性樹脂からなるストライプパターン
の終端部の間隔が中心部より広くなるような形状であれ
ばよく、実施例の他に例えば終端が放物状の形状でも、
先端が尖った形状でも良い。またレンズアレーの形状も
本実施例で説明したようなストライプだけでなく、各光
電変換素子群とレンズがそれぞれ１：１に対応するよう
な固体撮像装置に適用することも可能である。The present invention may have any shape as long as the distance between the end portions of the stripe pattern made of the second photosensitive resin is wider than the center portion, and in addition to the embodiment, for example, the end portions may have a parabolic shape.
A pointed tip may be used. Further, the shape of the lens array is not limited to the stripe described in the present embodiment, and it is also possible to apply to a solid-state imaging device in which each photoelectric conversion element group and lens correspond to each other 1: 1.
（発明の効果） 本発明によれば、固体撮像装置上に第１の感光性樹脂を
被着し、その上に、固体撮像装置の光電変換素子の列に
対応するように第２の感光性樹脂をストライプ状に残
し、その後、熱処理により第２の感光性樹脂をレンズ状
のにする固体撮像装置において、第２の感光性樹脂スト
ライプパターンの終端部の間隔を中心部の間隔より広く
することにより、熱流動時におけるレンズ形状の変形を
防ぐことができる。(Effect of the invention) According to the present invention, the first photosensitive resin is deposited on the solid-state imaging device, and the second photosensitive resin is applied thereon so as to correspond to the row of photoelectric conversion elements of the solid-state imaging device. In the solid-state imaging device in which the resin is left in a stripe shape and then the second photosensitive resin is made into a lens shape by heat treatment, the interval between the end portions of the second photosensitive resin stripe pattern is made wider than the interval between the central portions. This makes it possible to prevent the lens shape from being deformed during heat flow.
第１図(a)，(b)，(c)は、従来の固体撮像装置の製造方
法を示す断面模式図、第２図(a)，(b)は第１図の平面概
念図、第３図(a)，(b)，第４図は本発明の実施例を示す
平面概念図を示している。 １０……シリコンウェハー、１１……第１の感光性樹脂
層、１４，１８……光ダイオード、１５，１７……第２
感光性樹脂パターン、１６……レンズ、１９，２０，２
１，２２……第２感光性樹脂の終端部1 (a), (b) and (c) are schematic sectional views showing a conventional method for manufacturing a solid-state imaging device, and FIGS. 2 (a) and 2 (b) are plan conceptual views of FIG. 3 (a), (b) and FIG. 4 are conceptual plan views showing an embodiment of the present invention. 10 ... Silicon wafer, 11 ... First photosensitive resin layer, 14, 18 ... Photodiode, 15, 17 ... Second
Photosensitive resin pattern, 16 ... Lens, 19, 20, 2
1, 22 ... Termination part of the second photosensitive resin
Claims (1)
列に配置し、列方向に配置する前記光電変換素子群の各
列間に遮光された信号読み出し群を配置し、前記光電変
換素子群と信号読み出し群を第１の感光性樹脂で被い、
前記第１の感光性樹脂をその軟化温度以上で熱処理し、
その後、前記第１の感光性樹脂上に第２の感光性樹脂を
被着し、露光、現象により各列方向に配置されている前
記光電変換素子群の列に対応するように前記第２の感光
性樹脂をストライプ状に残し、その後、前記第２の感光
性樹脂の軟化温度以上で熱処理することにより凸状のレ
ンズアレーを形成する固体撮像装置の製造方法におい
て、ストライプ状に残す前記第２の感光性樹脂の終端部
の間隔を中心部の間隔より広くすることを特徴とする固
体撮像装置の製造方法。1. A photoelectric conversion element group is arranged on a semiconductor substrate in an arbitrary matrix, and a shielded signal reading group is arranged between columns of the photoelectric conversion element group arranged in a column direction. The group and the signal readout group with the first photosensitive resin,
Heat treating the first photosensitive resin above its softening temperature,
After that, a second photosensitive resin is deposited on the first photosensitive resin, and the second photosensitive resin is arranged so as to correspond to the rows of the photoelectric conversion element groups arranged in each row direction by exposure and phenomenon. In the method for manufacturing a solid-state imaging device, wherein the photosensitive resin is left in a stripe shape and then heat-treated at a temperature equal to or higher than the softening temperature of the second photosensitive resin to form a convex lens array. 2. The method for manufacturing a solid-state imaging device, wherein the distance between the end portions of the photosensitive resin is wider than the distance between the center portions.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59145425A JPH0612808B2 (en) | 1984-07-13 | 1984-07-13 | Method of manufacturing solid-state imaging device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59145425A JPH0612808B2 (en) | 1984-07-13 | 1984-07-13 | Method of manufacturing solid-state imaging device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6124270A JPS6124270A (en) | 1986-02-01 |
| JPH0612808B2 true JPH0612808B2 (en) | 1994-02-16 |
Family
ID=15384950
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59145425A Expired - Lifetime JPH0612808B2 (en) | 1984-07-13 | 1984-07-13 | Method of manufacturing solid-state imaging device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0612808B2 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62293673A (en) * | 1986-06-12 | 1987-12-21 | Nec Corp | Solid-state image sensor |
| JPH0624232B2 (en) * | 1987-03-19 | 1994-03-30 | 株式会社東芝 | Method of manufacturing solid-state imaging device |
| DE102007012115A1 (en) | 2006-11-30 | 2008-06-05 | Osram Opto Semiconductors Gmbh | radiation detector |
-
1984
- 1984-07-13 JP JP59145425A patent/JPH0612808B2/en not_active Expired - Lifetime
Non-Patent Citations (1)
| Title |
|---|
| ＩＥＤＭ，１９８３年１２月要網集Ｐ．４９７ |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6124270A (en) | 1986-02-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |