JPH0612770B2 - Semiconductor wafer cutting method - Google Patents

Semiconductor wafer cutting method

Info

Publication number
JPH0612770B2
JPH0612770B2 JP17227590A JP17227590A JPH0612770B2 JP H0612770 B2 JPH0612770 B2 JP H0612770B2 JP 17227590 A JP17227590 A JP 17227590A JP 17227590 A JP17227590 A JP 17227590A JP H0612770 B2 JPH0612770 B2 JP H0612770B2
Authority
JP
Japan
Prior art keywords
cutting
semiconductor wafer
semiconductor
semiconductor wafers
wafers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP17227590A
Other languages
Japanese (ja)
Other versions
JPH0461229A (en
Inventor
武 赤塚
喬 佐藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Naoetsu Electronics Co Ltd
Original Assignee
Naoetsu Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Naoetsu Electronics Co Ltd filed Critical Naoetsu Electronics Co Ltd
Priority to JP17227590A priority Critical patent/JPH0612770B2/en
Publication of JPH0461229A publication Critical patent/JPH0461229A/en
Publication of JPH0612770B2 publication Critical patent/JPH0612770B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B28WORKING CEMENT, CLAY, OR STONE
    • B28DWORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/02Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills
    • B28D5/022Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills by cutting with discs or wheels
    • B28D5/028Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills by cutting with discs or wheels with a ring blade having an inside cutting edge

Description

【発明の詳細な説明】 [産業上の利用分野] 本発明は、半導体ウエハの切断加工方法に関する。The present invention relates to a semiconductor wafer cutting method.

さらに詳しくは、トランジスタ等のデイスクリート素子
用基板を製造するための半導体ウエハを切断加工する方
法に関し、その切断加工における能率性の改良に関す
る。
More specifically, it relates to a method of cutting a semiconductor wafer for manufacturing a substrate for a discrete element such as a transistor, and to improvement of efficiency in the cutting process.

[従来の技術] 従来、デイスクリート素子用基板を製造するための半導
体ウエハの切断手段に関しては、本出願人が先に提案を
行なっている(特開平3−145726号)。
[Prior Art] Conventionally, the present applicant has previously proposed a semiconductor wafer cutting means for producing a substrate for a discrete element (Japanese Patent Laid-Open No. 3-145726).

即ち、両面に不純物が拡散された不純物拡散層を有する
半導体ウエハをその厚み幅の略中心部から切断する切断
手段において、半導体ウエハを損傷することなく能率的
に切断加工することを目的とするものである。
That is, in a cutting means for cutting a semiconductor wafer having an impurity diffusion layer in which impurities are diffused on both sides from a substantially central portion of its thickness width, an object is to efficiently perform a cutting process without damaging the semiconductor wafer. Is.

また、この本出願人の先提案についは、さらに当板等の
形成法を特開平3−181131号及び特開平3−58
807号を改良提案している。
Further, regarding the previous proposal of the present applicant, a method of forming a contact plate and the like is further described in JP-A-3-181131 and JP-A-3-58.
Proposed improvement of No. 807.

[発明が解決しようとする課題] 前述の本出願人の先提案では、半導体ウエハが極薄性で
あることから、切断加工中の微細なクラック、特に切断
終了部分のクラック発生防止や精度確保のために、通常
インゴットからのウエハのスライス程に、切断速度を速
くすることができず、切断加工の能率が良くないという
改良すべき点を有している。
[Problems to be Solved by the Invention] In the above-mentioned prior proposal by the present applicant, since the semiconductor wafer is extremely thin, it is possible to prevent generation of minute cracks during cutting, particularly cracks at the end of cutting and to ensure accuracy. Therefore, there is a point to be improved in that the cutting speed cannot be increased as much as the slicing of a wafer from an ingot, and the cutting efficiency is not good.

本発明は、このような改良すべき点、技術的背景を考慮
してなされたもので、1つの切断機構で複数枚の半導体
ウエハを同時的に能率的に切断する半導体ウエハの切断
加工方法を提供することを課題とする。
The present invention has been made in consideration of such points to be improved and technical background, and provides a semiconductor wafer cutting method for efficiently cutting a plurality of semiconductor wafers simultaneously by one cutting mechanism. The challenge is to provide.

[課題を解決するための手段] 前述の課題を解決するため、本発明に係る半導体ウエハ
の切断加工方法は、次のような手段を採用する。
[Means for Solving the Problems] In order to solve the above problems, the semiconductor wafer cutting method according to the present invention employs the following means.

即ち、請求項1では、両面に不純物が拡散された不純物
拡散層を有する半導体ウエハを真空吸着により保持して
その厚み巾の中心部からワーク回転式内周型の切断機で
2分割に切断する半導体のウエハの切断加工方法におい
て、切断機構の切断刃の切断作用平面内に複数枚の半導
体ウエハを、その外周部を補強した夫々独立して放射状
に配置し、半導体ウエハを放射状の配置の中心点を中心
として回転させながら、1切断送り動作で3枚以上の複
数枚の半導体ウエハを2分割に切断することを特徴とす
る。
That is, according to the first aspect, the semiconductor wafer having the impurity diffusion layers in which the impurities are diffused on both sides is held by vacuum suction, and is cut into two parts from the center portion of the thickness width by the work rotating inner peripheral cutting machine. In the semiconductor wafer cutting method, a plurality of semiconductor wafers are radially arranged independently in the cutting action plane of the cutting blade of the cutting mechanism, with their outer peripheral portions reinforced, and the semiconductor wafers are arranged at the center of the radial arrangement. It is characterized in that a plurality of semiconductor wafers of three or more are cut into two pieces by one cutting feed operation while rotating around a point.

さらに詳しくは、直径dなる単枚ウエハを切断するに必
要な最小切断ストロークは(1/2)dであるが、複数
枚(n≧3)を同時に切断する場合は、1枚当りd/nで
あり、同一の切断速度の同一条件下では、生産性比はn/
2倍の向上となり、すなわちウエハ枚数nが大きい程、
その効果が大きい。
More specifically, the minimum cutting stroke required to cut a single wafer having a diameter d is (1/2) d, but when cutting a plurality of wafers (n ≧ 3) at the same time, d / n per wafer Therefore, under the same conditions with the same cutting speed, the productivity ratio is n /
It is a double improvement, that is, the larger the number of wafers n,
The effect is great.

また、請求項2では、請求項1の半導体ウエハの切断加
工方法において、半導体ウエハの周縁の一部に夫々補強
部を形成し、夫々独立した複数枚の半導体ウエハの放射
状の配置の中心点側に補強部を位置させて補強部の一部
を切残し、2分割される半導体ウエハを補強部を介して
非分離的に切断することを特徴とする。
According to a second aspect of the present invention, in the method of cutting a semiconductor wafer according to the first aspect, a reinforcing portion is formed on a part of a peripheral edge of the semiconductor wafer, and each of the plurality of independent semiconductor wafers has a radial center point side. It is characterized in that the reinforcing portion is located at a position where a part of the reinforcing portion is left uncut, and the two-divided semiconductor wafer is non-separably cut through the reinforcing portion.

また、請求項3では、請求項1または2の半導体ウエハ
の切断加工方法において、半導体ウエハの切断中に、未
加工、加工済みの半導体ウエハの供給、回収のための主
動作を完了させておくことを特徴とする。
According to a third aspect of the present invention, in the semiconductor wafer cutting method according to the first or second aspect, the main operation for supplying and collecting the unprocessed and processed semiconductor wafers is completed during the semiconductor wafer cutting. It is characterized by

また、請求項4では、請求項3の半導体ウエハの切断加
工方法において、半導体ウエハを保持して切断刃へ接離
する保持機構に対する未加工、加工済みの半導体ウエハ
の受け渡しを切断刃を回避した位置で行なうことを特徴
とする。
According to a fourth aspect of the present invention, in the semiconductor wafer cutting processing method according to the third aspect, the cutting blade is not used for delivering the unprocessed and processed semiconductor wafer to the holding mechanism that holds the semiconductor wafer and contacts and separates from the cutting blade. It is characterized in that it is performed at the position.

[作 用] 前述の手段によると、請求項1では、切断刃に対して複
数枚の半導体ウエハを所定配置し回転及び直線移動させ
て順次切断することから、従来単数枚の半導体ウエハを
切断していた1切断送りストロークの倍で複数枚の半導
体ウエハを切断することができるため、1つの切断刃で
複数枚(n)の半導体ウエハを同時的に能率的に切断す
る半導体ウエハの切断加工方法を提供するという課題が
解決される(但しn≧3)。
[Operation] According to the above-mentioned means, according to claim 1, a plurality of semiconductor wafers are arranged at a predetermined position with respect to the cutting blade, and are sequentially rotated and linearly moved to sequentially cut the semiconductor wafer. Since a plurality of semiconductor wafers can be cut at twice the single cutting feed stroke, a method of cutting a plurality of (n) semiconductor wafers simultaneously and efficiently with one cutting blade Is solved (where n ≧ 3).

又、夫々のウエハを一定の基準面(保持盤)に独立して
保持することにより、互いに干渉し合うことなく正確な
切断が可能となる。
Also, by holding each wafer independently on a fixed reference surface (holding plate), accurate cutting can be performed without interfering with each other.

また、請求項2では、請求項1の作用において、補強部
によって半導体ウエハの切断端が補強され、 従来、ワーク回転式切断機構では点接触切断方式となる
ための切断刃の寿命は向上するが、加工歪が大きくて、
とくに切り終り部分で破損してシリコン半導体の切断に
は利用でき難かった不具合を解決し得る。
Further, in the second aspect, in the operation of the first aspect, the cutting end of the semiconductor wafer is reinforced by the reinforcing portion, and the life of the cutting blade is improved because the conventional work-type rotary cutting mechanism uses the point contact cutting method. , Processing distortion is large,
In particular, it is possible to solve the problem that it is difficult to use for cutting a silicon semiconductor because it is damaged at the end of cutting.

又、従来ワーク回転式のウエハ切断に関しては、切断さ
れるウエハが切断刃の裏側より切り飛ばされるのを防ぐ
ために、ワーク回転の同一回転可能な精妙な保持装置を
必要とするが、それを省くことができ、さらに、加工済
の半導体ウエハの分離を防止して一体的な回収が行なわ
れる。
Further, in the conventional work rotating type wafer cutting, in order to prevent the wafer to be cut from being cut off from the back side of the cutting blade, a delicate holding device capable of rotating the work in the same direction is required, but it is omitted. Further, it is possible to prevent the processed semiconductor wafer from being separated, and to perform integrated recovery.

また、請求項3では、請求項1の作用に加えて、半導体
ウエハの供給、回収の動作が切断加工と同時進行し切断
効率を向上させる。
Further, in addition to the effect of the first aspect, in the third aspect, the supply and recovery operations of the semiconductor wafer proceed simultaneously with the cutting process, and the cutting efficiency is improved.

また、請求項4では、請求項3の作用において、切断刃
の存在は半導体ウエハの受け渡し動作の障害とならなく
なり、受け渡し動作は容易となり、かつ安全確実であ
る。
According to the fourth aspect of the invention, in the operation of the third aspect, the presence of the cutting blade does not hinder the transfer operation of the semiconductor wafer, and the transfer operation is easy and safe.

[実施例] 以下、本発明に係る半導体ウエハの切断加工方法の実施
例を図面に基いて説明する。
[Embodiment] An embodiment of a semiconductor wafer cutting method according to the present invention will be described below with reference to the drawings.

第1図は、本発明に係る半導体ウエハの切断加工方法の
実施例を示す基本概略図である。
FIG. 1 is a basic schematic diagram showing an embodiment of a semiconductor wafer cutting method according to the present invention.

第1図(A)は、半導体ウエハWをその厚み巾の略中心部
から2分割に切断する内周型切断機構の切断刃1の内径
1′の切断作用平面内に、周縁の一部な補強部Pを夫々
形成した3枚の未加工の半導体ウエハWを補強部Pが相
対するように配置し、早対する半導体ウエハWの中心点
Rを中心として半導体ウエハWを回転させながら、切断
刃1の1切断送りストロークで3枚の半導体ウエハWを
同時に切断するようにしてある。半導体ウエハWに形成
される補強部Pは、接着剤等を肉盛り形成したり樹脂材
等で予め成形したものを接着することにより形成される
もので、両面に不純物が拡散された不純物拡散層など厚
さ方向に質的不均一性を有する薄性、硬質性の半導体ウ
エハWの、特にワーク回転式において著しく発生する切
断端の損傷を防止するものであり、補強範囲の広い方が
好ましい。
FIG. 1 (A) shows a part of the peripheral edge in the cutting action plane of the inner diameter 1 ′ of the cutting blade 1 of the inner peripheral cutting mechanism that cuts the semiconductor wafer W into two halves from the approximate center of the thickness. The three unprocessed semiconductor wafers W each having the reinforcing portion P are arranged so that the reinforcing portions P face each other, and the cutting blade is rotated while rotating the semiconductor wafer W around the center point R of the semiconductor wafer W which is immediately opposite. Three semiconductor wafers W are simultaneously cut in one cutting feed stroke. The reinforcing portion P formed on the semiconductor wafer W is formed by depositing an adhesive or the like or adhering a preformed resin material or the like, and is an impurity diffusion layer in which impurities are diffused on both sides. A thin and hard semiconductor wafer W having qualitative non-uniformity in the thickness direction, for example, is used to prevent damage to the cutting edge, which occurs remarkably in the workpiece rotation type, and a wide reinforcement range is preferable.

なお、第1図(A)のより効率の良い例としては、第1図
(B)に示すように4枚の半導体ウエハWを配置し、第1
図(C)に示すように5枚の半導体ウエハWを配置するこ
とも可能である。これ等例でも、半導体ウエハWの配置
が夫々互いに等距離で相対する放射状になっており、放
射状の中心点R側に補強部Pが位置するようになってい
る。
As a more efficient example of FIG. 1 (A), see FIG.
4 semiconductor wafers W are arranged as shown in FIG.
It is also possible to arrange five semiconductor wafers W as shown in FIG. In these examples as well, the semiconductor wafers W are arranged in a radial pattern so as to face each other at an equal distance, and the reinforcing portion P is located on the radial center point R side.

このような実施例によると、第1図(B)の4枚の半導体
ウエハWについて図示した第2図に示すように、バキュ
ームに連通したポーラスな吸着構造の保持盤2′を有す
る保持機構2に半導体ウエハWを放射状に配置して保持
し、サーボモータ等の位置送り機構を駆動して各半導体
ウエハWの略中心部が切断刃の切断作用平面内に位置す
るように割出し、サーボモータ等の切断送り機構を駆動
して切断刃1、保持機構2の何れか一方を移動させ、か
つ、保持機構2を前記中心点Rを中心として回転させて
半導体ウエハWを回転させ、4枚の半導体ウエハWを4
つの保持盤を基準面にして精度よく同時的に切断するこ
とができる。また、補強部Pの一部を切残すと、2分割
された半導体ウエハWを補強部Pを介して連結を保持し
分離を防止することができ、加工済みの半導体ウエハW
の回収が容易となり、切断終了直前ウエハの切り飛ばし
を防ぐ精妙な保持装置が省略できる。
According to such an embodiment, as shown in FIG. 2 showing four semiconductor wafers W in FIG. 1 (B), a holding mechanism 2 having a holding plate 2'having a porous suction structure communicating with a vacuum. The semiconductor wafers W are radially arranged and held on the wafer, and a position feed mechanism such as a servo motor is driven to index so that the substantially central portion of each semiconductor wafer W is located within the cutting action plane of the cutting blade. A cutting feed mechanism such as the above is driven to move either one of the cutting blade 1 and the holding mechanism 2, and the holding mechanism 2 is rotated about the center point R to rotate the semiconductor wafer W and four 4 semiconductor wafers W
The two holding plates can be used as reference planes for accurate and simultaneous cutting. Further, if a part of the reinforcing portion P is left uncut, it is possible to maintain the connection of the two-divided semiconductor wafer W through the reinforcing portion P and prevent separation, and the processed semiconductor wafer W is processed.
Can be easily collected, and an elaborate holding device that prevents the wafer from being cut off just before the completion of cutting can be omitted.

なお、本出願人の実験例では、第2図に示す場合におい
て、切断機構1の内径1′が240mm、半導体ウエハWの
直径が75mmφ、厚さが1.25mm、補強部Pの厚さhを10m
m、前記中心点Rを通り各半導体ウエハWの中心間の間
隔Dを120mmφとする位置関係で、切断機構1は通常速
度で保持機構2を低速回転(10数rpm)により切断速度3
0mm/分で切断ストロークSが80mmの切断工作を行なっ
た。この結果、切断所要時間は約48秒であり、同一条件
での1枚の半導体ウエハWの切断所要時間の半分以下と
なった。
In the experimental example of the applicant, in the case shown in FIG. 2, the inner diameter 1'of the cutting mechanism 1 is 240 mm, the diameter of the semiconductor wafer W is 75 mmφ, the thickness is 1.25 mm, and the thickness h of the reinforcing portion P is 10m
m, the distance D between the centers of the respective semiconductor wafers W passing through the center point R is 120 mmφ, the cutting mechanism 1 cuts the holding mechanism 2 at a normal speed, and the holding mechanism 2 rotates at a low speed (tens of rpm) to cut the cutting speed 3
Cutting work was performed with a cutting stroke S of 80 mm at 0 mm / min. As a result, the required cutting time was about 48 seconds, which was less than half the required cutting time for one semiconductor wafer W under the same conditions.

さらに、本発明に係る方法を実施するための装置構成に
ついて、位置送り機構は切断刃1の切断作用空間から保
持機構2を離間させて切断刃1を回避して後述の供給回
収機構5との連係を可能にすることにより、半導体ウエ
ハWの保持機構2への受渡しを円滑に行なうことができ
るようにするのが好ましい。
Further, regarding the device configuration for carrying out the method according to the present invention, the position feeding mechanism separates the holding mechanism 2 from the cutting action space of the cutting blade 1 to avoid the cutting blade 1 and to supply and recover a mechanism 5 described later. It is preferable that the semiconductor wafer W can be smoothly transferred to the holding mechanism 2 by enabling the linkage.

また、半導体ウエハWを供給、回収する供給回収機構5
は、第3図に示すように、一定範囲内を往復動可能なス
テッピングモータ等を利用した移動部51と、移動部51に
連結した2基のロボッティングアーム部52,53とを備え
て、切断加工中に半導体ウエハWの供給、回収の主動作
を完了させるようにするのが好ましい。
Further, a supply / recovery mechanism 5 for supplying and recovering the semiconductor wafer W.
As shown in FIG. 3, is provided with a moving part 51 utilizing a stepping motor or the like capable of reciprocating within a certain range, and two roboting arm parts 52, 53 connected to the moving part 51, It is preferable to complete the main operations of supplying and collecting the semiconductor wafer W during the cutting process.

即ち、移動部51は、保持機構2が切断刃1から最も離間
した受渡し位置と隣接配置された未加工の半導体ウエハ
Wが収納された供給部6、加工済みの半導体ウエハW′
が収納される回収部7との間に配設された第1移動部51
aと、第1移動部51aに支持されて第1移動部51aによる
往復動を補完する第2移動部51bと、第2移動部51bに一
定間隔を介して隣接して支持されロボッティングアーム
部52,53を直接動作する一対の供給側移動部51c、回収
側移動部51dとを備えている。また、ロボッティングア
ーム部52,53は、供給側移動部51c、回収側移動部51dに
対応した供給側と回収側とからなり、後端が供給側移動
部51c、回収側移動部51dに夫々連結された回動可能なア
ーム52a,53aと、アーム52a,53aの回動支点となるギア
付きサーボモータ等の回転部52b,53bと、アーム52a,5
3aの先端に夫々取付けられ未加工の半導体ウエハWを吸
着手段等により掴む4個の供給側ハンド52c,52d,52,
52f加工済みの半導体ウエハW′を吸着手段等により掴
む4個の回収側ハンド53c,53d,53e,53fとを備えてい
る。なお、前記供給部6、回収部7は、未加工、加工済
みの半導体ウエハW,W′を並列可能なカセット構造か
らなり、半導体ウエハW,W′の取出し、収納毎にステ
ッピングモータ等で一定ピッチ(半導体ウエハW,W′
の取出し、収納の枚数ピッチ)で並列方向へ移動するよ
うになっている。
That is, the moving unit 51 includes a supply unit 6 in which an unprocessed semiconductor wafer W is placed adjacent to a delivery position where the holding mechanism 2 is farthest from the cutting blade 1, and a processed semiconductor wafer W ′.
The first moving unit 51 disposed between the collecting unit 7 and the collecting unit 7
a, a second moving portion 51b that is supported by the first moving portion 51a and complements the reciprocating movement of the first moving portion 51a, and a roboting arm portion that is supported adjacently to the second moving portion 51b at a fixed interval. It is provided with a pair of supply side moving part 51c and recovery side moving part 51d which directly operate 52 and 53. Further, the roboting arm parts 52 and 53 are composed of a supply side moving part 51c and a supply side corresponding to the collecting side moving part 51d and a collecting side, and the rear ends thereof are provided to the supplying side moving part 51c and the collecting side moving part 51d, respectively. The rotatable arms 52a and 53a connected to each other, the rotating portions 52b and 53b such as a geared servomotor or the like serving as a rotation fulcrum of the arms 52a and 53a, and the arms 52a and 5a.
Four supply-side hands 52c, 52d, 52, each of which is attached to the tip of 3a and holds an unprocessed semiconductor wafer W by suction means or the like.
It is provided with four recovery-side hands 53c, 53d, 53e, 53f for gripping the semiconductor wafer W'which has been processed with 52f by suction means or the like. The supply unit 6 and the recovery unit 7 have a cassette structure in which unprocessed and processed semiconductor wafers W and W'can be arranged side by side. A constant stepping motor or the like is used every time the semiconductor wafers W and W'are taken out and stored. Pitch (semiconductor wafers W, W '
It is designed to move in the parallel direction at the time of taking out and storing the number of sheets.

このような装置構成によると、供給回収機構5をその第
1移動部51a、第2移動部51bが最も供給部6、回収部7
側に近接した箇所に動作させ、供給側移動部51cの下動
作により供給側のロボッティングアーム部52のアーム52
aを真直させ降下させて供給側ハンド52c,52d,52e,52
fで供給部6に収納されている4枚の未加工の半導体ウ
エハWを回転して順次掴み、同時に、回収側移動部51d
の下動作により回収側のロボッティングアーム部53のア
ーム53aを真直させ降下させて回収側ハンド53c,53d,5
3e,53fに掴まれている4枚の加工済みの半導体ウエハ
W′を回収部7に収納する。そして、第3図(A)に示す
ように、両ロボッティングアーム部52,43のアーム52
a,53aを上昇させ、次いで第3図(B)に示すように、回
収側のロボッティングアーム部53の回収側ハンド53c,5
3d,53e,53fを保持機構2に対して連係動作できる位置
へ動作させ、供給側のロボッティングアーム部52の供給
側ハンド52c,52d,52e,52fに未加工の半導体ウエハW
を4枚用意して、先に保持機構2に保持させた4枚の未
加工の半導体ウエハWの切断工程の終了を待機すること
になる。
According to such an apparatus configuration, the supply / recovery mechanism 5 is configured such that the first moving part 51a and the second moving part 51b are the most supplying part 6 and the recovering part 7.
Arm 52 of the supply side roboting arm 52 by operating the supply side moving part 51c downward.
Straighten and lower a to supply side hands 52c, 52d, 52e, 52
At f, the four unprocessed semiconductor wafers W stored in the supply unit 6 are rotated and sequentially gripped, and at the same time, the recovery side moving unit 51d.
By the downward movement, the arm 53a of the collecting-side roboting arm portion 53 is straightened and lowered to collect the collecting hands 53c, 53d, 5
The four processed semiconductor wafers W ′ gripped by 3e and 53f are stored in the recovery unit 7. Then, as shown in FIG. 3 (A), the arm 52 of both roboting arm parts 52, 43
a, 53a are raised, and then as shown in FIG. 3 (B), the collecting-side hands 53c, 5 of the collecting-side roboting arm 53 are collected.
3d, 53e, 53f are moved to a position where they can cooperate with the holding mechanism 2, and the unprocessed semiconductor wafer W is formed on the supply-side hands 52c, 52d, 52e, 52f of the supply-side roboting arm portion 52.
4 are prepared, and the completion of the cutting process of the four unprocessed semiconductor wafers W previously held by the holding mechanism 2 is awaited.

即ち、4枚の未加工の半導体ウエハWの切断工程中に、
4枚の加工済みの半導体ウエハW′の回収と新な4枚の
未加工の半導体ウエハWの供給との殆どの動作を同時進
行させることができる。
That is, during the cutting process of four unprocessed semiconductor wafers W,
Most of the operations of recovering the four processed semiconductor wafers W ′ and supplying new four unprocessed semiconductor wafers W can be simultaneously advanced.

また、切断工程の終了時には、供給回収機構5が切断機
構の切断刃1を回避して保持機構2に対して連係動作で
きるように、位置送り機構によって保持機構2を切断刃
1から離間させ、第3図(C)に示すように、回収側移動
部51dを下動作させ回収側のロボッティングアーム部53
のアーム53aを降下させて回収側ハンド53c,53d,53e,
53fにより4枚の加工済みの半導体ウエハW′を掴み、
保持機機2の両保持盤2′の吸着機構を解除する。
Further, at the end of the cutting process, the holding mechanism 2 is separated from the cutting blade 1 by the position feeding mechanism so that the supply / recovery mechanism 5 can avoid the cutting blade 1 of the cutting mechanism and operate in cooperation with the holding mechanism 2. As shown in FIG. 3 (C), the collecting-side moving unit 51d is moved downward and the collecting-side roboting arm unit 53
Arm 53a is lowered to collect hands 53c, 53d, 53e,
53f holds four processed semiconductor wafers W ',
The suction mechanism of both holding plates 2'of the holding machine 2 is released.

この後には、回収側移動部51dを上動作させ回収側のロ
ボッティングアーム部53のアーム53aを回収側ハンド53
c,53d,53e,53fに4枚の加工済みの半導体ウエハW′
を掴んだまま上昇させ、第3図(D)に示すように第2移
動部51bを最も保持機構2の受け渡し位置に近接した箇
所に動作させ、未加工の半導体ウエハWを保持機構2に
引き渡した後に第3図(A)に示す最初の動作を繰返す
ことになる。
After this, the collection side moving unit 51d is moved upward to move the arm 53a of the collection side roboting arm unit 53 to the collection side hand 53.
Four processed semiconductor wafers W'on c, 53d, 53e and 53f
While holding it, it is raised and the second moving part 51b is moved to a position closest to the transfer position of the holding mechanism 2 as shown in FIG. 3 (D), and the unprocessed semiconductor wafer W is transferred to the holding mechanism 2. After that, the first operation shown in FIG. 3 (A) is repeated.

[発明の効果] 以上のように本発明に係る半導体ウエハの切断加工方法
は、請求項1によると、切断刃の1切断送り動作で複数
枚の半導体ウエハを切断することができるため、切断加
工を能率的かつ精度良く行なうことができる効果があ
る。
EFFECTS OF THE INVENTION As described above, the semiconductor wafer cutting method according to the present invention can cut a plurality of semiconductor wafers by one cutting feed operation of the cutting blade according to the first aspect of the invention. There is an effect that can be performed efficiently and accurately.

さらに、請求項2によると、請求項1の効果に加えて、
切断される半導体ウエハの配置の特殊性等から、2分割
された加工済の半導体ウエハを一体的に回収することが
でき、加工済の半導体ウエハの回収能率が良好となり、
さらには切断終了時のウエハの切り飛ばしを防ぐ保持装
置の反対側の吸着保持装置の取付け調整が一切不要とで
きる効果がある。
Furthermore, according to claim 2, in addition to the effect of claim 1,
Due to the peculiarity of the arrangement of the semiconductor wafers to be cut, it is possible to integrally collect the processed semiconductor wafers divided into two parts, and the recovery efficiency of the processed semiconductor wafers becomes good,
Further, there is an effect that the attachment and adjustment of the suction holding device on the opposite side of the holding device that prevents the wafer from being cut off at the end of cutting can be completely eliminated.

さらに、請求項3,4によると、請求項1,2の効果に
加えて、切断工程に関連する工程の連係を円滑にしたた
め、切断加工の能率をさらに向上する効果がある。
Further, according to the third and fourth aspects, in addition to the effects of the first and second aspects, since the steps related to the cutting step are smoothly linked, there is an effect of further improving the cutting efficiency.

【図面の簡単な説明】[Brief description of drawings]

第1図(A)は本発明に係る半導体ウエハの切断方法の実
施例を示す基本概略図、第1図(B)(C)は夫々第1図(A)
のさらに能率の良い例を示す図、第2図(A)は第1図(B)
の切断工作を示す正面図、第2図(B)は第2図(A)の平面
図、第3図は本発明に係る半導体ウエハの切断方法に連
係する機構の動作図で (A)〜(D)の順に工程を示すものである。 1……切断刃 2……保持機構 5……供給回収機構 W……未加工の半導体ウエハ W′……加工済みの半導体ウエハ P……補強部
FIG. 1 (A) is a basic schematic diagram showing an embodiment of a semiconductor wafer cutting method according to the present invention, and FIGS. 1 (B) and (C) are respectively FIG. 1 (A).
Fig. 2 (A) is Fig. 1 (B) showing a more efficient example of
2B is a plan view of FIG. 2A, and FIG. 3 is an operation diagram of a mechanism linked to the semiconductor wafer cutting method according to the present invention. The steps are shown in the order of (D). 1 ... Cutting blade 2 ... Holding mechanism 5 ... Supply / recovery mechanism W ... Unprocessed semiconductor wafer W '... Processed semiconductor wafer P ... Reinforcement part

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】両面に不純物が拡散された不純物拡散層を
有する半導体ウエハを真空吸着により保持してその厚み
幅の中心部からワーク回転式内周型の切断機で2分割に
切断する半導体のウエハの切断加工方法において、切断
機構の切断刃の切断作用平面内に複数枚の半導体ウエハ
を、その外周部を補強し夫々独立して放射状に配置し、
半導体ウエハを放射状の配置の中心点を中心として回転
させながら、1切断送り動作で3枚以上の複数枚の半導
体ウエハを2分割に切断することを特徴とする半導体ウ
エハの切断加工方法。
1. A semiconductor wafer having a semiconductor wafer having an impurity diffusion layer in which impurities are diffused on both sides thereof is held by vacuum suction and cut into two parts from a center portion of its thickness width by a work rotating inner peripheral cutting machine. In the wafer cutting processing method, a plurality of semiconductor wafers are reinforced in the outer peripheral portion of each of the semiconductor wafers in the cutting action plane of the cutting blade of the cutting mechanism, and are individually arranged radially.
A method of cutting a semiconductor wafer, which comprises cutting three or more semiconductor wafers into two parts by one cutting feed operation while rotating the semiconductor wafer about a center point of a radial arrangement.
【請求項2】請求項1の半導体ウエハの切断加工方法に
おいて、半導体ウエハの周縁の一部に夫々補強部を形成
し、夫々独立した複数枚の半導体ウエハの放射状の配置
の中心点側に補強部を位置させて補強部の一部を切残
し、2分割される半導体ウエハを補強部を介して連結体
としたまま非分離的に切断することを特徴とする半導体
ウエハの切断加工方法。
2. The method for cutting a semiconductor wafer according to claim 1, wherein a reinforcing portion is formed on a part of the peripheral edge of the semiconductor wafer, and the reinforcing portion is reinforced on the central point side of the radial arrangement of a plurality of independent semiconductor wafers. And a part of the reinforcing part is left uncut, and the semiconductor wafer divided into two parts is cut in a non-separable manner while being a connected body via the reinforcing part.
【請求項3】請求項1または2の半導体ウエハの切断加
工方法において、半導体ウエハの切断中に、未加工、加
工済みの半導体ウエハの供給、回収のための主動作を完
了させておくことを特徴とする半導体ウエハの切断加工
方法。
3. The method for cutting a semiconductor wafer according to claim 1 or 2, wherein the main operation for supplying and collecting the unprocessed and processed semiconductor wafer is completed during the cutting of the semiconductor wafer. A method for cutting and processing a characteristic semiconductor wafer.
【請求項4】請求項3の半導体ウエハの切断加工方法に
おいて、半導体ウエハを保持して切断刃へ接離する保持
機構に対する未加工、加工済みの半導体ウエハの受け渡
しを切断刃を回避した位置で行なうことを特徴とする半
導体ウエハの切断加工方法。
4. The method of cutting a semiconductor wafer according to claim 3, wherein the unprocessed and processed semiconductor wafer is delivered to a holding mechanism for holding the semiconductor wafer and bringing it into and out of contact with the cutting blade at a position avoiding the cutting blade. A method for cutting and processing a semiconductor wafer, which is performed.
JP17227590A 1990-06-28 1990-06-28 Semiconductor wafer cutting method Expired - Fee Related JPH0612770B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17227590A JPH0612770B2 (en) 1990-06-28 1990-06-28 Semiconductor wafer cutting method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17227590A JPH0612770B2 (en) 1990-06-28 1990-06-28 Semiconductor wafer cutting method

Publications (2)

Publication Number Publication Date
JPH0461229A JPH0461229A (en) 1992-02-27
JPH0612770B2 true JPH0612770B2 (en) 1994-02-16

Family

ID=15938897

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17227590A Expired - Fee Related JPH0612770B2 (en) 1990-06-28 1990-06-28 Semiconductor wafer cutting method

Country Status (1)

Country Link
JP (1) JPH0612770B2 (en)

Also Published As

Publication number Publication date
JPH0461229A (en) 1992-02-27

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