JPH0612769B2 - Method and device for cutting semiconductor wafer - Google Patents

Method and device for cutting semiconductor wafer

Info

Publication number
JPH0612769B2
JPH0612769B2 JP16438390A JP16438390A JPH0612769B2 JP H0612769 B2 JPH0612769 B2 JP H0612769B2 JP 16438390 A JP16438390 A JP 16438390A JP 16438390 A JP16438390 A JP 16438390A JP H0612769 B2 JPH0612769 B2 JP H0612769B2
Authority
JP
Japan
Prior art keywords
cutting
semiconductor wafer
holding
supply
unprocessed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP16438390A
Other languages
Japanese (ja)
Other versions
JPH0461121A (en
Inventor
勉 佐藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Naoetsu Electronics Co Ltd
Original Assignee
Naoetsu Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Naoetsu Electronics Co Ltd filed Critical Naoetsu Electronics Co Ltd
Priority to JP16438390A priority Critical patent/JPH0612769B2/en
Publication of JPH0461121A publication Critical patent/JPH0461121A/en
Publication of JPH0612769B2 publication Critical patent/JPH0612769B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B28WORKING CEMENT, CLAY, OR STONE
    • B28DWORKING STONE OR STONE-LIKE MATERIALS
    • B28D1/00Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor
    • B28D1/005Cutting sheet laminae in planes between faces
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B28WORKING CEMENT, CLAY, OR STONE
    • B28DWORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/02Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills
    • B28D5/022Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills by cutting with discs or wheels
    • B28D5/028Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills by cutting with discs or wheels with a ring blade having an inside cutting edge

Description

【発明の詳細な説明】 [産業上の利用分野] 本発明は、半導体ウエハの切断加工方法および装置に関
する。
The present invention relates to a semiconductor wafer cutting method and apparatus.

さらに詳しくは、トランジスタ等のディスクリート素子
用基板を製造するための半導体ウエハを切断加工する方
法、装置に関し、その切断加工における能率性の改良に
関する。
More specifically, the present invention relates to a method and an apparatus for cutting a semiconductor wafer for manufacturing a substrate for a discrete device such as a transistor, and to improvement of efficiency in the cutting.

[従来の技術] 従来、ディスクリート素子用基板を製造するための半導
体ウエハの切断手段に関しては、本出願人が先に提案を
行なっている(特開平3−145726号)。
[Prior Art] Conventionally, the applicant of the present invention has previously proposed a semiconductor wafer cutting means for manufacturing a substrate for a discrete element (Japanese Patent Laid-Open No. 3-145726).

即ち、両面に不純物が拡散された不純物拡散層を有する
半導体ウエハをその厚み巾の中心部から切断する切断手
段において、半導体ウエハを損傷することなく能率的に
切断加工することを目的とするものである。
That is, in a cutting means for cutting a semiconductor wafer having an impurity diffusion layer in which impurities are diffused on both sides from the central portion of its thickness width, the purpose is to efficiently perform a cutting process without damaging the semiconductor wafer. is there.

また、この本出願人の先提案については、さらに切断終
了端の補強材(当板)等の形成方法について特開平3−
181131号に提案している。
Further, regarding the previous proposal of the present applicant, a method of forming a reinforcing material (contact plate) or the like at the end of cutting is further described in JP-A-3-
No. 181131.

[発明が解決しようとする課題] 前述の本出願人の先提案では、半導体ウエハが極薄性で
あることから、切断加工中の微細なクラックの発生防止
や精度確保のために、切断速度を通常のインゴットから
のウエハのスライス程度に速くすることができず、切断
加工の能率がよくないという改良すべき点を有してい
る。
[Problems to be Solved by the Invention] In the above-mentioned prior proposal by the applicant, since the semiconductor wafer is extremely thin, the cutting speed is set to prevent the generation of fine cracks during cutting and to ensure accuracy. It has a point to be improved that it cannot be made as fast as a slice of a wafer from a normal ingot, and the cutting process is not efficient.

本発明は、対象ウエハの径が切断刃の内径に比して相対
的に小さい場合は、1つの切断機構で複数枚の半導体ウ
エハを同時に能率的に切断を終了する半導体ウエハの切
断加工方法と、この方法を実施するに好適な装置とを提
供することを課題とする。
The present invention provides a semiconductor wafer cutting method for efficiently and simultaneously cutting a plurality of semiconductor wafers by one cutting mechanism when the diameter of the target wafer is relatively smaller than the inner diameter of the cutting blade. It is an object of the present invention to provide a device suitable for carrying out this method.

[課題を解決するための手段] 前述の課題を解決するため、本発明に係る半導体ウエハ
の切断加工方法は、次のような手段を採用する。
[Means for Solving the Problems] In order to solve the above problems, the semiconductor wafer cutting method according to the present invention employs the following means.

即ち、請求項1では、内周型の切断機構で半導体ウエハ
をその厚み巾の中心部から2分割に切断する半導体ウエ
ハの切断加工方法において、切断機構の切断刃の切断作
用平面内に複数枚の半導体ウエハを、切断のための送り
方向と直角的な方向へ単列状に配置し、その方向の位置
関係を保ったまま真空吸着により保持して切断し、1切
断送り動作で複数枚の半導体ウエハを切断することを特
徴とする。
That is, according to claim 1, in the semiconductor wafer cutting method of cutting a semiconductor wafer into two halves from a central portion of its thickness width by an inner peripheral cutting mechanism, a plurality of wafers are cut in a cutting action plane of a cutting blade of the cutting mechanism. The semiconductor wafers of 1 are arranged in a single row in a direction perpendicular to the feeding direction for cutting, and are held and cut by vacuum suction while maintaining the positional relationship in that direction, and a plurality of wafers are cut by one cutting feeding operation. It is characterized in that a semiconductor wafer is cut.

また、請求項2では、請求項1の半導体ウエハの切断加
工方法において、半導体ウエハは両面に不純物が拡散さ
れた不純物拡散層など厚さ方向に質的不均一性を有する
ウエハに有用である。
According to a second aspect of the present invention, in the semiconductor wafer cutting method according to the first aspect, the semiconductor wafer is useful as a wafer having a qualitative nonuniformity in the thickness direction such as an impurity diffusion layer in which impurities are diffused on both sides.

また、請求項3では、請求項1または2の半導体ウエハ
の切断加工方法において、周縁の一部に補強部を夫々形
成した複数枚の半導体ウエハを補強部が切断送り後方側
で、補強部で覆われたウエハ外周の補強部中央で切断終
了時点では切断刃の内周円弧に同時に到達するように配
置し、同時に切断を終了し回収装置との連係動作を容易
ならしめていることを特徴とする。
According to a third aspect of the present invention, in the method of cutting a semiconductor wafer according to the first or second aspect, a plurality of semiconductor wafers each having a reinforcing portion formed on a part of a peripheral edge thereof are cut and fed by the reinforcing portion on the rear side. It is characterized in that it is arranged so that the inner peripheral arc of the cutting blade is reached at the same time at the end of cutting at the center of the reinforced portion of the covered wafer outer periphery, and at the same time, cutting is completed and the linking operation with the recovery device is facilitated. .

また、請求項4では、請求項1または2または3の半導
体ウエハの切断加工方法において、半導体ウエハの切断
中に、未加工、加工済みの半導体ウエハの供給、回収の
ための主動作を完了させ切断機構を効率的に稼動させて
おくことを特徴とする。
According to a fourth aspect of the present invention, in the semiconductor wafer cutting method according to the first aspect, the second aspect, or the third aspect, a main operation for supplying and recovering an unprocessed or processed semiconductor wafer is completed while the semiconductor wafer is being cut. The feature is that the cutting mechanism is operated efficiently.

また、請求項5では、請求項4の半導体ウエハの切断加
工方法において、半導体ウエハを保持して切断機構へ接
離する保持機構に対する未加工、加工済みの半導体ウエ
ハの受け渡しを切断機構を回避した位置で容易に安全か
つ確実に行なうことを特徴とする。
According to a fifth aspect of the present invention, in the semiconductor wafer cutting processing method according to the fourth aspect, the cutting mechanism is avoided for delivering the unprocessed and processed semiconductor wafer to the holding mechanism that holds the semiconductor wafer and contacts and separates from the cutting mechanism. It is characterized by easy, safe and reliable operation at the position.

また、請求項6では、請求項4または5の半導体ウエハ
の切断加工方において、未加工の複数枚の半導体ウエハ
の保持装置への引き渡し、加工済み2倍数枚のウエハの
保持装置よりの回収のための動作を同時に行ない切断機
構を効率的に稼動させることを特徴とする。
Further, in claim 6, in the method of cutting a semiconductor wafer according to claim 4 or 5, the method of delivering a plurality of unprocessed semiconductor wafers to a holding device and collecting the processed double wafers from the holding device. It is characterized in that the cutting mechanism is efficiently operated by simultaneously performing the following operations.

さらに、前述の課題を解決するため、本発明に係る半導
体ウエハの切断加工装置は、次のような手段を採用す
る。
Further, in order to solve the above-mentioned problems, the semiconductor wafer cutting apparatus according to the present invention employs the following means.

即ち、請求項7では、高速回転して半導体ウエハをその
厚み巾の中心部から切断して2分割する内周型の切断刃
を切断作用面が垂直になるように装備した切断機構と、
複数枚の未加工の半導体ウエハを切断刃の切断作用平面
上に保持し2倍数枚の加工済みの半導体ウエハとなって
も保持を継続する保持機構と、切断機構、保持機構を近
接、離間するように水平方向へ相対移動させる位置送り
機構と、切断機構、保持機構を平行逆移動するように垂
直方向または水平方向へ相対移動させる切断送り機構
と、保持機構と未加工の半導体ウエハの供給部、加工済
みの半導体ウエハの回収部との間で複数枚、2倍数枚の
これ等半導体ウエハを搬送受け渡しする供給回収機構と
を備えてなり、保持機構は切断機構から離間した位置で
保持機能を断続して供給回収機構との間で未加工、加工
済みの半導体ウエハの受け渡しを行なうように動作設定
され、位置送り機構は保持機構を切断刃に近接させた位
置で切断刃の切断作用面に未加工の半導体ウエハの厚み
巾の中心部を割出すように動作設定され、供給回収機構
は半導体ウエハの切断中に加工済みの半導体ウエハを回
収部へ搬送して収納し新たな未加工の半導体ウエハを供
給部から取出して搬送を完了し待機するように動作設定
されてなる。
That is, in claim 7, a cutting mechanism equipped with an inner peripheral cutting blade that rotates at a high speed to cut the semiconductor wafer from the center of its thickness width and divides the wafer into two parts so that the cutting action surface becomes vertical.
The holding mechanism, which holds a plurality of unprocessed semiconductor wafers on the cutting action plane of the cutting blade and continues to hold even if the number of processed semiconductor wafers is double, separates the cutting mechanism and the holding mechanism from each other. Position feeding mechanism for relatively moving in the horizontal direction, a cutting feeding mechanism for relatively moving the cutting mechanism and the holding mechanism in the vertical direction or the horizontal direction so as to move in the reverse direction, and the holding mechanism and the unprocessed semiconductor wafer supply unit. And a supply / recovery mechanism for transferring and delivering a plurality of semiconductor wafers and a doubled number of these semiconductor wafers to / from the processed semiconductor wafer recovery unit, and the holding mechanism has a holding function at a position separated from the cutting mechanism. The operation is set to transfer the unprocessed and processed semiconductor wafers intermittently to the supply / recovery mechanism, and the position feed mechanism cuts the cutting blade at the position where the holding mechanism is close to the cutting blade. The operation is set to index the central part of the thickness width of the unprocessed semiconductor wafer on the surface, and the supply / recovery mechanism conveys the processed semiconductor wafer to the recovery part during the cutting of the semiconductor wafer and stores it in a new unprocessed state. Operation is set so as to take out the semiconductor wafer from the supply unit, complete the transfer, and wait.

また、請求項8では、請求項7の半導体ウエハの切断加
工装置において、保持機構は間隔調整可能な相対する2
つの保持盤を複数組備え、供給回収機構は片面に吸着部
を有する複数個の供給側ハンドと両面に吸着部を有する
複数個の回収側ハンドとを備えてなり、保持機構は少な
くとも一方の保持盤で未加工の半導体ウエハを保持し他
方の保持盤が遅くとも未加工の半導体ウエハの切断終了
直前に保持機能を動作して切断2分割された加工済の各
半導体ウエハの保持を継続し、かつ、回収側ハンドが加
工済みの半導体ウエハの間に差入れられ加工済の両半導
体ウエハを同時に引き受け供給側ハンドが未加工の半導
体ウエハを引き渡すことができるように保持盤の間隔を
拡間するように動作設定されたことを特徴とする。
Further, in claim 8, in the semiconductor wafer cutting apparatus according to claim 7, the holding mechanisms are opposed to each other with a space adjustable.
A plurality of holding plates are provided, and the supply / recovery mechanism is provided with a plurality of supply-side hands having suction parts on one side and a plurality of recovery-side hands having suction parts on both sides, and the retention mechanism holds at least one A board holds an unprocessed semiconductor wafer, and the other holding board operates the holding function at the latest just before the end of cutting of the unprocessed semiconductor wafer to continue cutting and holds each processed semiconductor wafer divided into two. , The collecting side hand is inserted between the processed semiconductor wafers and simultaneously receives both processed semiconductor wafers, so that the supply side hand can spread the unprocessed semiconductor wafers so that the holding plate interval is increased. The operation is set.

また、請求項9では、請求項7または8の半導体ウエハ
の切断加工装置において、供給部、回収部は半導体ウエ
ハを並列するカセット構造からなり半導体ウエハの取出
し、収納毎に一定ピッチで並列方向へ移動する駆動部を
備え、供給回収機構は垂直な動作平面内で機能すること
を特徴とする。
According to a ninth aspect of the present invention, in the semiconductor wafer cutting apparatus according to the seventh or eighth aspect, the supply unit and the recovery unit have a cassette structure in which the semiconductor wafers are arranged in parallel, and the semiconductor wafers are taken out and stored in a parallel direction at a constant pitch every time they are stored. It is characterized in that it comprises a moving drive and the supply and recovery mechanism functions in a vertical plane of motion.

また、請求項10では、請求項7または8または9の半導
体ウエハの切断加工装置において、供給回収機構は未加
工の半導体ウエハの供給系と加工済みの半導体ウエハの
回収系とを共通系列に隣接一体化したことを特徴とす
る。
According to a tenth aspect of the invention, in the semiconductor wafer cutting apparatus of the seventh, eighth or ninth aspect, the supply / recovery mechanism has an unprocessed semiconductor wafer supply system and a processed semiconductor wafer recovery system adjacent to each other in a common series. It is characterized by being integrated.

[作 用] 前述の手段によると、請求項1では、切断機構に対して
複数枚の半導体ウエハを所定配置して切断することか
ら、従来単数枚の半導体ウエハを切断していた1切断送
りストロークにほぼ近い1切断ストロークで複数枚の半
導体ウエハを切断することができるため、1つの切断刃
で複数枚の半導体ウエハを同時に能率的に切断を終了す
る半導体ウエハの切断加工方法を提供するという課題が
解決される。
[Operation] According to the above-mentioned means, according to claim 1, a plurality of semiconductor wafers are arranged in a predetermined arrangement with respect to the cutting mechanism to cut the semiconductor wafer. Since it is possible to cut a plurality of semiconductor wafers with one cutting stroke substantially close to the above, it is an object of the present invention to provide a semiconductor wafer cutting method that efficiently and simultaneously cuts a plurality of semiconductor wafers with one cutting blade. Is solved.

また、請求項2では、請求項1の作用において、不純物
が拡散された硬質性の半導体ウエハが切断対象とされ
る。
According to the second aspect of the present invention, in the action of the first aspect, the hard semiconductor wafer in which the impurities are diffused is targeted for cutting.

また、請求項3では、請求項1の作用において、補強部
によって半導体ウエハの切断端が補強されると共に、複
数の半導体ウエハがほぼ同時に切断開始され同時に切断
終了し、回収装置との連係動作が容易になる。
According to a third aspect of the present invention, in the operation of the first aspect, the cutting portion of the semiconductor wafer is reinforced by the reinforcing portion, and the plurality of semiconductor wafers are started to be cut at substantially the same time, and the cutting is ended at the same time. It will be easier.

また、請求項4では、請求項1の作用に加えて、半導体
ウエハの供給、回収の動作が切断加工と同時進行するこ
とになる。
Further, in the fourth aspect, in addition to the action of the first aspect, the operations of supplying and collecting the semiconductor wafers proceed simultaneously with the cutting process.

また、請求項5では、請求項4の作用において、切断刃
の存在が半導体ウエハの受け渡し動作の障害とならなく
なり、安全かつ確実である。
According to the fifth aspect of the invention, in the operation of the fourth aspect, the presence of the cutting blade does not hinder the transfer operation of the semiconductor wafer, which is safe and reliable.

また、請求項6では、請求項4の作用において、複数枚
の未加工の半導体ウエハ、2倍数枚の加工済の半導体ウ
エハが同時に保持装置へ供給、同時に保持装置より回収
されることになり、切断機の効率的な稼動が計れる。
According to claim 6, in the operation of claim 4, a plurality of unprocessed semiconductor wafers and two or more processed semiconductor wafers are simultaneously supplied to the holding device and are simultaneously recovered from the holding device. Efficient operation of the cutting machine can be measured.

さらに、請求項7では、請求項1〜請求項6までの作用
を充足し得る動作設定がなされた切断機構、保持機構、
位置送り機構、切断送り機構、供給回収機構を備えてい
るため、1つの切断機構で複数枚の半導体ウエハを同時
または同時的に能率的に切断する半導体ウエハの切断加
工方法を実施するに好適な装置を提供するという課題が
解決される。
Further, in claim 7, the cutting mechanism, the holding mechanism, and the operation mechanism, which are set so as to satisfy the functions of claims 1 to 6,
Since the position feed mechanism, the cutting feed mechanism, and the supply / recovery mechanism are provided, it is suitable to carry out a semiconductor wafer cutting method for efficiently cutting a plurality of semiconductor wafers simultaneously or simultaneously by one cutting mechanism. The problem of providing a device is solved.

また、請求項8では、請求項7の作用において、保持機
構と供給回収機構との連係が円滑に行なわれる。
Further, in the eighth aspect, in the operation of the seventh aspect, the holding mechanism and the supply and recovery mechanism are smoothly linked.

また、請求項9では、請求項7の作用において、供給回
収機構と供給部、回収部との連係が円滑に行なわれる。
Further, in the ninth aspect, in the operation of the seventh aspect, the supply / recovery mechanism, the supply section, and the recovery section are smoothly linked.

また、請求項10では、請求項7の作用において、供給回
収機構の設置構造が小型コンパクト化されるとともに操
作上の便宜が計れる。
Further, in claim 10, in the operation of claim 7, the installation structure of the supply / recovery mechanism can be made compact and compact, and convenience in operation can be achieved.

[実施例] 以下、本発明に係る半導体ウエハの切断加工方法および
装置の実施例を図面に基いて説明する。
[Embodiment] An embodiment of a semiconductor wafer cutting method and apparatus according to the present invention will be described below with reference to the drawings.

第1図は、本発明に係る半導体ウエハの切断加工方法の
実施例を示す基本概略図である。
FIG. 1 is a basic schematic diagram showing an embodiment of a semiconductor wafer cutting method according to the present invention.

第1図(A)は、半導体ウエハWをその厚み巾の中心部か
ら2分割に切断する内周型の切断機構1の切断刃12の切
断作用平面内に、周縁の一部に補強部Pを夫々形成した
2枚の未加工の半導体ウエハWを補強部Pが切断送り後
方側で、補強部で覆われたウエハ外周の補強部中央で切
断終了時点では切断刃12の内周円弧に同時に到達するよ
うに単列状に配置し、切断機構1の1切断送り動作で2
枚の半導体ウエハWを同時に切断するようにしてある。
半導体ウエハWに形成される補強部Pは、第2図に示す
ように、接着剤等を肉盛り形成したり樹脂材等で予め成
形したものを接着することにより形成されるもので、半
導体ウエハW(特に、不純物が拡散された不純物拡散層
を有する薄性、硬質性のディスクリート素子基板用の半
導体ウエハ)の切断端の損傷を防止するものである。
FIG. 1 (A) shows a reinforcing portion P at a part of the peripheral edge in the cutting action plane of the cutting blade 12 of the inner peripheral type cutting mechanism 1 for cutting the semiconductor wafer W into two parts from the center of the thickness width. The two unprocessed semiconductor wafers W each formed with the reinforcing portion P are cut and fed at the rear side, and at the end of the cutting at the center of the reinforcing portion of the outer circumference of the wafer covered with the reinforcing portion, at the same time as the inner circular arc of the cutting blade 12 is cut. Arrange them in a single row so that they can reach, and 2 in 1 cutting feed operation of the cutting mechanism 1.
The semiconductor wafers W are cut at the same time.
As shown in FIG. 2, the reinforcing portion P formed on the semiconductor wafer W is formed by depositing an adhesive or the like or adhering a resin material or the like that has been previously molded. The purpose is to prevent damage to the cut end of W (particularly, a thin and hard semiconductor wafer for a discrete element substrate having an impurity diffusion layer in which impurities are diffused).

このような実施例によると、2枚の半導体ウエハWを同
時に切断開始し同時に切断終了することができ、半導体
ウエハWの能率的な切断加工を行なうことができること
に加えて、未加工,加工済みの半導体ウエハW,W′の
供給回収が保持装置との連係メカニズムが平易となって
能率が良好となる。また、切断機構1の切断ストローク
がウエハ単枚当りで略半分とする利点がある。
According to such an embodiment, two semiconductor wafers W can be simultaneously cut and cut at the same time, so that the semiconductor wafer W can be cut efficiently, and in addition, unprocessed and processed. The supply and recovery of the semiconductor wafers W and W'is made simpler in the linkage mechanism with the holding device, and the efficiency is improved. Further, there is an advantage that the cutting stroke of the cutting mechanism 1 is about half per single wafer.

なお、この切断機構1には、a,bで示す2箇所から2
枚の未加工の半導体ウエハWに対して夫々冷却液が供給
されるようにするのが望ましい。
It should be noted that the cutting mechanism 1 is provided with two from two locations indicated by a and b.
It is desirable that the cooling liquid be supplied to each of the unprocessed semiconductor wafers W.

さらに、第1図(A)の実施例の他例として、第1図(B)に
示すように3枚の半導体ウエハWを同時に切断し、第1
図(C)に示すように4枚の半導体ウエハWを同時に切断
することも可能である。また、第1図(D)に示すように
径の異なる複数枚の半導体ウエハWを同時に切断するこ
とも可能であり、この場合も切断終了時が同時となるよ
うに配置するのが好ましい。
Further, as another example of the embodiment shown in FIG. 1 (A), three semiconductor wafers W are simultaneously cut as shown in FIG.
It is also possible to simultaneously cut four semiconductor wafers W as shown in FIG. Further, as shown in FIG. 1 (D), it is possible to simultaneously cut a plurality of semiconductor wafers W having different diameters, and in this case also, it is preferable to arrange the semiconductor wafers W so that the cutting ends are made at the same time.

尚、図中のSは各ウエハを同時に切断終了するための最
少ストロークである。
It should be noted that S in the drawing is a minimum stroke for simultaneously finishing the cutting of each wafer.

第3図、第4図は、第1図(A)に示すような2枚の半導
体ウエハの切断に好適な切断加工装置の実施例を示すも
のである。
FIGS. 3 and 4 show an embodiment of a cutting apparatus suitable for cutting two semiconductor wafers as shown in FIG. 1 (A).

この実施例は、第3図、第4図に示すように、切断工程
に供せられる切断機構1、切断送り機構4と、切断工
程、供給工程、回収工程の各工程に連係する保持機構
2、位置送り機構3と、供給工程、回収工程に供せられ
る供給回収機構5とで構成されている。
In this embodiment, as shown in FIG. 3 and FIG. 4, a cutting mechanism 1 and a cutting feeding mechanism 4 provided for a cutting process and a holding mechanism 2 linked to each process of a cutting process, a supplying process and a collecting process. The position feed mechanism 3 and the supply / recovery mechanism 5 used for the supply process and the recovery process.

切断機構1は内周型切断刃からなるもので、回転軸に連
結して高速回転する皿形のチャック11と、内周縁にダイ
アモンド層等の刃先を有する円盤形の切断刃12と、切断
刃12をチャック11の円周縁に緊張固定するリング形の取
付け部材13とを備えている。
The cutting mechanism 1 is composed of an inner peripheral cutting blade, and has a dish-shaped chuck 11 that is connected to a rotary shaft and rotates at a high speed, a disk-shaped cutting blade 12 having a cutting edge such as a diamond layer on the inner peripheral edge, and a cutting blade. And a ring-shaped attachment member (13) for tensioning and fixing (12) to the circumference of the chuck (11).

この切断機構1は装置全体の中で切断刃12の切断作用面
を垂直にして固定的に設置されるのが好ましく、固定的
な切断作用面上で切断刃12が高速回転して2枚の未加工
の半導体ウエハWを夫々その厚み巾の中心部から切断し
て2分割するようになっている。
This cutting mechanism 1 is preferably fixedly installed with the cutting action surface of the cutting blade 12 being vertical in the entire apparatus, and the cutting blade 12 is rotated at a high speed on the fixed cutting action surface so that two cutting blades are installed. Each unprocessed semiconductor wafer W is cut from the center of its thickness and divided into two parts.

保持機構2は、多孔質材等で形成され垂直に相対しバキ
ュームポンプ(図示せず)に接続して吸着構造の保持機
能を奏する2組の保持盤21,21′及び22,22′と、一方
の保持盤21,21′にロッド23を介して連結し両保持盤2
1,21′及び22,22′の間隔を調整するエアシリンダ等
の間隔調整駆動部24と、両保持盤21,21′及び22,22′
を水平面上で切断機構1への近接、離間を可能にするベ
ース25とを備えている。この内1組の保持盤21,21′
は、2枚の未加工の半導体ウエハWを切断機構1の切断
刃12の切断作用平面内に配置可能に位置送り機構に連結
されている。
The holding mechanism 2 includes two sets of holding plates 21, 21 'and 22, 22' which are made of a porous material or the like and which vertically face each other and are connected to a vacuum pump (not shown) to perform the holding function of the suction structure. Both holding plates 21 and 21 'are connected to each other via a rod 23 and both holding plates 2
A space adjusting drive unit 24 such as an air cylinder for adjusting the space between 1, 21 'and 22, 22', and both holding plates 21, 21 'and 22, 22'.
And a base 25 that allows the cutting mechanism 1 to approach and separate from the cutting mechanism 1 on a horizontal plane. Of these, one set of holding boards 21, 21 '
Is connected to the position feed mechanism so that two unprocessed semiconductor wafers W can be arranged in the cutting action plane of the cutting blade 12 of the cutting mechanism 1.

この保持機構2は、両保持盤21,21′及び22,22′の保
持機能の動作、解除により未加工の半導体ウエハW、加
工済みの半導体ウエハW′を保持、離脱するものである
が、両保持盤21,21′及び22,22′が切断機構1から離
間した位置のみで未加工半導体ウエハの供給及び加工済
みの半導体ウエハW′の離脱を可能にしており、この離
脱の際には第3図(B)に示すように両保持盤21,21′及
び22,22′の間隔が離間するようになっている。また、
この保持機構2は、一方の保持盤21,21′の保持機能を
動作させ供給された未加工の半導体ウエハWを吸着保持
した状態で切断し、遅くとも補強部Pを含めての切断終
了直前に他方の保持盤22,22′の保持機能も合わせて動
作させ切断機構1に切断された一方の加工済の半導体ウ
エハW′をも切飛ばすこと等なく継続して保持するよう
になっている。
This holding mechanism 2 holds and releases an unprocessed semiconductor wafer W and a processed semiconductor wafer W'by operating and releasing the holding function of both holding plates 21, 21 'and 22, 22'. Both holding plates 21, 21 'and 22, 22' enable the supply of the unprocessed semiconductor wafer and the removal of the processed semiconductor wafer W'only at the positions separated from the cutting mechanism 1, and at the time of this removal. As shown in FIG. 3 (B), the two holding plates 21, 21 'and 22, 22' are separated from each other. Also,
The holding mechanism 2 operates by holding the one of the holding plates 21 and 21 'to cut the supplied unprocessed semiconductor wafer W in a sucked and held state, and at the latest just before the end of the cutting including the reinforcing portion P. The holding functions of the other holding plates 22 and 22 'are also operated so that the one processed semiconductor wafer W'cut by the cutting mechanism 1 is continuously held without being cut off.

位置送り機構3は、保持機構2の2組の両保持盤21,2
1′及び22,22′をベース25上で水平方向へ一体的に切
断機構1の切断作用面に近接、離間させるサーボモータ
等からなる。
The position feed mechanism 3 includes two sets of two holding plates 21 and 2 of the holding mechanism 2.
1 'and 22, 22' are composed of, for example, a servo motor which horizontally and integrally moves on the base 25 to and away from the cutting action surface of the cutting mechanism 1.

この位置送り機構3は、切断機構1の切断作用面に保持
機構2を近接して切断機構1の切断刃12の切断作用面に
未加工の半導体ウエハWの厚み巾の中心部を割出すよう
になっており、また切断機構の切断作用面から保持機構
2を離間させて切断機構1の切断刃12を回避して後述の
供給回収機構5との連係を可能にしている。
The position feeding mechanism 3 brings the holding mechanism 2 close to the cutting action surface of the cutting mechanism 1 so as to index the central portion of the thickness width of the unprocessed semiconductor wafer W to the cutting action surface of the cutting blade 12 of the cutting mechanism 1. In addition, the holding mechanism 2 is separated from the cutting action surface of the cutting mechanism to avoid the cutting blade 12 of the cutting mechanism 1 and to be linked with the supply and recovery mechanism 5 described later.

切断送り機構4は、未加工の半導体ウエハWを保持して
いる保持機構2をそのベース25と共に垂直方向または水
平方向へ移動させるサーボモータ等からなる。
The cutting / feeding mechanism 4 is composed of a servo motor or the like that moves the holding mechanism 2 holding the unprocessed semiconductor wafer W together with its base 25 in the vertical direction or the horizontal direction.

この切断送り機構4は、位置送り機構3が切断機構1の
切断刃12の切断作用面に未加工の半導体ウエハWの厚み
巾の中心部を割出した後に移動を開始するようになって
いる。なお、この切断送り機構4の動作中には、位置送
り機構3は動作しないようになっている。
The cutting feed mechanism 4 starts to move after the position feed mechanism 3 indexes the central portion of the thickness width of the unprocessed semiconductor wafer W to the cutting action surface of the cutting blade 12 of the cutting mechanism 1. . The position feed mechanism 3 does not operate while the cutting feed mechanism 4 is operating.

供給回収機構5は、一定範囲内を往復動可能なステッピ
ングモータ等を利用した移動部51と、移動部51に連結し
た2基のロボッティングアーム部52,53とを備えてい
る。
The supply / recovery mechanism 5 includes a moving unit 51 that uses a stepping motor or the like that can reciprocate within a certain range, and two roboting arm units 52 and 53 that are connected to the moving unit 51.

移動部51は、保持機構2が切断機構1から最も離間した
受け渡し位置と隣接配置された未加工の半導体ウエハW
が収納された供給部6、加工済みの半導体ウエハW′が
収納される回収部7との間に配設された第1移動部51a
と、第1移動部51aに支持されて第1移動部51aによる往
復動を補完する第2移動部51bと、第2移動部51bに一定
間隔を介して隣接して支持されロボッティングアーム部
52,53を直接動作する一対の供給側移動部51c、回収側
移動部51dとを備えている。
The moving part 51 has an unprocessed semiconductor wafer W arranged adjacent to the transfer position where the holding mechanism 2 is farthest from the cutting mechanism 1.
A first moving section 51a disposed between the supply section 6 in which is stored and the recovery section 7 in which the processed semiconductor wafer W'is stored.
And a second moving part 51b supported by the first moving part 51a to complement the reciprocating motion of the first moving part 51a, and a roboting arm part that is supported adjacent to the second moving part 51b at regular intervals.
It is provided with a pair of supply side moving part 51c and recovery side moving part 51d which directly operate 52 and 53.

ロボッティングアーム部52,53は供給側移動部51c、回
収側移動部51dに対応した供給側と回収側とからなり、
後端が供給側移動部51c、回収側移動部51dに夫々連結さ
れた回動可能なアーム52a,53aと、アーム52a,53aの回
動支点となるロータリアクチュエータ等の回転部52b,5
3bと、アーム52a,53aの先端に夫々取付けられ未加工の
半導体ウエハWを吸着手段等により掴む2個の供給側ハ
ンド52c,52d、加工済の半導体ウエハW′を吸着手段等
により掴む2対の回収側ハンド53c,53dとを備えてい
る。これ等供給側ハンド52c,52d、回収側ハンド53c,5
3dは保持機構2の保持盤21,21′及び22,22′に対応し
た配置構成になっており、特に回収側ハンド53c,53dは
4枚の加工済の半導体ウエハW′を同時に掴むことがで
きるように対構造になっている。なお、ロボッティング
アーム部52,53に回転部52b,53bを設けたのは、切断機
構が定位置に固定上に配置されたワーク水平移動側であ
るため、供給部6、回収部7での収納と保持機構2への
受け渡しとの間で90度回転させ補強部Pを切断終了側に
するためである。
The roboting arm parts 52 and 53 are composed of a supply side moving part 51c, a supply side corresponding to the collecting side moving part 51d, and a collecting side.
Rotatable arms 52a and 53a whose rear ends are connected to the supply-side moving portion 51c and the recovery-side moving portion 51d, respectively, and rotary portions 52b and 5 such as rotary actuators that serve as pivotal fulcrums of the arms 52a and 53a.
3b, two supply-side hands 52c, 52d attached to the tips of the arms 52a, 53a, respectively, for holding the unprocessed semiconductor wafer W by suction means, and two pairs for holding the processed semiconductor wafer W'by suction means, etc. The collecting side hands 53c and 53d are provided. These supply side hands 52c, 52d, recovery side hands 53c, 5
3d has an arrangement corresponding to the holding plates 21, 21 'and 22, 22' of the holding mechanism 2, and in particular, the collecting hands 53c, 53d can hold four processed semiconductor wafers W'at the same time. It has a paired structure so that you can. The robots 52, 53 are provided with the rotating parts 52b, 53b because the cutting mechanism is on the work horizontal moving side fixedly arranged at a fixed position. This is because the reinforcing portion P is set to the cutting end side by rotating it by 90 degrees between the storage and the delivery to the holding mechanism 2.

なお、前記供給部6、回収部7は、未加工、加工済みの
半導体ウエハW,W′を並列可能なカセット構造からな
り、半導体ウエハW,W′の取出し、収納毎にステッピ
ングモータ等で一定ピッチ(半導体ウエハW,W′の取
出し、収納の枚数ピッチ)で並列方向へ移動するように
なっている。また、この供給部6、回収部7は、夫々2
個,2対からなる供給側ハンド52c,52d、回収側ハンド
53c,53dに対応して、2列並列が可能な構造となってい
る。
The supply unit 6 and the recovery unit 7 have a cassette structure in which unprocessed and processed semiconductor wafers W and W'can be arranged side by side. A constant stepping motor or the like is used every time the semiconductor wafers W and W'are taken out and stored. It is arranged to move in a parallel direction at a pitch (pitch of taking out and storing the semiconductor wafers W and W '). Further, the supply unit 6 and the recovery unit 7 are respectively 2
Supply side hands 52c, 52d consisting of two pairs, collection side hand
Corresponding to 53c and 53d, it has a structure in which two columns can be arranged in parallel.

このような実施例によると、まず、供給回収機構5が切
断機構1の切断刃12を回避して保持機構2に対して連係
動作できるように、位置送り機構3によって保持機構2
を切断機構1から離間させ、保持機構2の保持盤21,2
1′及び22,22′を拡間する。そして、この際には、第
4図(A)に示すように、供給回収機構5はその第1移動
部51a、第2移動部51bが最も保持機構2の受渡し側に近
接した箇所に動作しており、供給側移動部51cの下動作
によりこれに連結している供給側のロボッティングアー
ム部52のアーム52aを降下させ供給側ハンド52c,52dの
吸着機構等を解除すると共に、保持機構2の一方の保持
盤21,21′の吸着機能を動作することにより、供給側ハ
ンド52c,52dに吸着されて搬送供給された2枚の未加工
の半導体ウエハWを保持機構2に吸着保持することがで
きる。
According to such an embodiment, first, the holding mechanism 2 is moved by the position feeding mechanism 3 so that the supply / recovery mechanism 5 can avoid the cutting blade 12 of the cutting mechanism 1 and operate in cooperation with the holding mechanism 2.
Is separated from the cutting mechanism 1 to hold the holding plates 21 and 2 of the holding mechanism 2.
Spread 1'and 22, 22 '. Then, at this time, as shown in FIG. 4 (A), the supply / recovery mechanism 5 operates at a position where the first moving portion 51a and the second moving portion 51b are closest to the delivery side of the holding mechanism 2. When the supply side moving unit 51c is moved downward, the arm 52a of the supply side roboting arm unit 52 connected to the supply side moving unit 51c is lowered to release the suction mechanism of the supply side hands 52c and 52d and the holding mechanism 2 By operating the suction function of one of the holding plates 21 and 21 ', the two unprocessed semiconductor wafers W sucked and fed by the supply hands 52c and 52d are sucked and held by the holding mechanism 2. You can

次に、第3図(A)に示すように、2枚の未加工の半導体
ウエハWを吸着保持した保持機構2を位置送り機構3に
よって切断機構1に近接させ、保持機構2に吸着保持さ
れている未加工の半導体ウエハWの厚み巾の中心部を切
断機構1の切断刃12の切断作用面に割出す。この状態で
切断送り機構4を動作させ、保持機構を水平移動させて
2枚の未加工の半導体ウエハWを切断する。この切断状
態は前述のように第1図に示したようになり、能率的な
切断加工が可能となる。なお、この切断終了時には、保
持機構2の他方の保持盤22,22′の動作して切断された
加工済みの半導体ウエハW′の切飛ばしを防止すること
になる。
Next, as shown in FIG. 3 (A), the holding mechanism 2 that holds the two unprocessed semiconductor wafers W by suction is brought close to the cutting mechanism 1 by the position feed mechanism 3 and is held by suction by the holding mechanism 2. The central portion of the thickness width of the unprocessed semiconductor wafer W is indexed to the cutting action surface of the cutting blade 12 of the cutting mechanism 1. In this state, the cutting feed mechanism 4 is operated and the holding mechanism is horizontally moved to cut the two unprocessed semiconductor wafers W. This cutting state is as shown in FIG. 1 as described above, and efficient cutting can be performed. At the end of this cutting, the other holding plates 22 and 22 'of the holding mechanism 2 operate to prevent the cut semiconductor wafer W'from being cut off.

このような切断工程中においては、前述の第4図(A)の
状態から、第4図(B)に示すように供給側移動部51cの上
動作により供給側のロボッティングアーム部52のアーム
52aを上昇させる。なお、回収側移動部51dに連結してい
る回収側のロボッティングアーム部53の回収側ハンド53
c,53dには、加工済の半導体ウエハW′が掴まれている
が、これについては後に詳述する。
During such a cutting process, from the state of FIG. 4 (A) described above, as shown in FIG. 4 (B), the arm of the roboting arm part 52 on the supply side is moved by the upward movement of the supply side moving part 51c.
Raise 52a. The collecting-side hand 53 of the collecting-side roboting arm 53 connected to the collecting-side moving unit 51d.
The processed semiconductor wafer W'is held by c and 53d, which will be described in detail later.

さらに、続いて、第4図(C)に示すように、供給回収機
構5をその第1移動部51a、第2移動部51bが最も供給部
6、回収部7側に近接した箇所に動作させ、第4図(D)
に示すように、供給側移動部51cの下動作により供給側
のロボッティングアーム部52のアーム52aを真直させ降
下させて供給側ハンド52c,52dで供給部6に収納されて
いる新な2枚の未加工の半導体ウエハWを掴み、回収側
移動部51dの下動作により回収側のロボッティングアー
ム部53のアーム53aを真直させ降下させて回収側ハンド5
3c,53dに掴まれている4枚の加工済みの半導体ウエハ
W′を順次に回収部7に収納する動作を同時に開始す
る。そして、第4図(E)に示すように、両ロボッティン
グアーム部52,53のアーム52a,53aを上昇させ回転部52
b,53bを介してL字形に屈曲させ、次いで第4図(F)に
示すように、回収側のロボッティングアーム部53の回収
側ハンド53c,53dを保持機構2に対して連係動作できる
位置へ動作させ、供給側のロボッティングアーム部52の
供給側ハンド52c,52dに未加工の半導体ウエハWを2枚
用意して、先に保持機構2に保持させた2枚の未加工の
半導体ウエハWの切断工程の終了を待機することにな
る。
Further, subsequently, as shown in FIG. 4 (C), the supply / recovery mechanism 5 is moved to a position where the first moving section 51a and the second moving section 51b are closest to the supply section 6 and the collecting section 7 side. , Fig. 4 (D)
As shown in FIG. 2, the lower part of the supply side moving part 51c straightens and lowers the arm 52a of the supply side roboting arm part 52, and the new two sheets stored in the supply part 6 by the supply side hands 52c and 52d. The unprocessed semiconductor wafer W is gripped, and the arm 53a of the collecting-side roboting arm portion 53 is straightened by the lower operation of the collecting-side moving unit 51d to lower the collecting-side hand 5.
At the same time, the operation of sequentially storing the four processed semiconductor wafers W ′ held by 3c and 53d in the recovery unit 7 is started. Then, as shown in FIG. 4 (E), the arms 52a, 53a of both roboting arm parts 52, 53 are raised to rotate the rotating part 52.
A position where the collecting side hands 53c, 53d of the collecting side roboting arm portion 53 can be linked to the holding mechanism 2 as shown in FIG. 4 (F) after being bent into an L shape through b and 53b. The two unprocessed semiconductor wafers W are prepared in the supply-side hands 52c and 52d of the supply-side roboting arm portion 52, and the two unprocessed semiconductor wafers are held by the holding mechanism 2 in advance. It will wait for the end of the cutting process of W.

即ち、2枚の未加工の半導体ウエハW切断工程中に、4
枚の加工済みの半導体ウエハW′の回収と新な2枚の未
加工の半導体ウエハWの供給との殆どの動作を同時進行
させることができる。
That is, during the process of cutting two unprocessed semiconductor wafers W, 4
Most of the operations of collecting the processed semiconductor wafers W ′ and supplying new two unprocessed semiconductor wafers W can be simultaneously performed.

また、切断工程の終了後には、第3図(B)に示すよう
に、供給回収機構5が切断機構1の切断刃12を回避して
保持機構2に対して連係動作できるように、位置送り機
構3によって保持機構2を切断機構1から離間させ、4
枚の加工済みの半導体ウエハW′を保持して保持機構2
の保持盤21,21′及び22,22′を拡間させる。そして、
第4図(G)にに示すように、回収側移動部51dを下動作さ
せ回収側のロボッティングアーム部53のアーム53aを降
下させて回収側ハンド53c,53dにより4枚の加工済の半
導体ウエハW′を同時に掴み、保持機構2の両保持盤2
1,21′及び22,22′の吸着機能を解除する。
Further, after the cutting process is completed, as shown in FIG. 3 (B), the position feeding is performed so that the supply / recovery mechanism 5 avoids the cutting blade 12 of the cutting mechanism 1 and can operate in cooperation with the holding mechanism 2. The holding mechanism 2 is separated from the cutting mechanism 1 by the mechanism 3 and
Holding mechanism 2 for holding the processed semiconductor wafers W ′
The holding plates 21, 21 'and 22, 22' of the above are spread. And
As shown in FIG. 4 (G), the collecting side moving part 51d is moved downward to lower the arm 53a of the collecting side roboting arm part 53, and the four collecting side hands 53c and 53d are used to process the four processed semiconductors. Hold the wafer W'at the same time, and hold both the holding plates 2 of the holding mechanism 2.
Release the adsorption function of 1, 21 'and 22, 22'.

この後には、回収側移動部51dを上動作させ回収側のロ
ボッティングアーム部53のアーム53aを回収側ハンド53
c,53dに4枚の加工済の半導体ウエハW′を掴んだまま
上昇させ、第4図(H)に示すように第2移動部51bを最も
保持機構2の受け渡し位置に近接した箇所に動作させ、
第4図(A)の動作を繰返すことになる。
After this, the collection side moving unit 51d is moved upward to move the arm 53a of the collection side roboting arm unit 53 to the collection side hand 53.
The four processed semiconductor wafers W ′ are held and raised by c and 53d, and the second moving portion 51b is moved to a position closest to the transfer position of the holding mechanism 2 as shown in FIG. 4 (H). Let
The operation of FIG. 4 (A) is repeated.

なお、このような実施例では、供給回収機構5の構造か
ら、未加工の半導体ウエハWの供給系と加工済の半導体
ウエハW′の回収系とが隣接一体化されているため、設
置面積の低減化、装置の構造のコンパクト化が図れると
共に、操作、動作面での機能性が良好となる。
In such an embodiment, because of the structure of the supply / recovery mechanism 5, the supply system for the unprocessed semiconductor wafer W and the recovery system for the processed semiconductor wafer W ′ are adjacently integrated, so that the installation area is reduced. It is possible to reduce the size and make the structure of the device compact, and at the same time, the functionality in terms of operation and operation is improved.

第5図は、第1図(C)に示すような3枚の半導体ウエハ
Wの切断に好適な切断加工装置の実施例を示すものであ
る。
FIG. 5 shows an embodiment of a cutting apparatus suitable for cutting the three semiconductor wafers W as shown in FIG. 1 (C).

この実施例では、未加工の半導体ウエハWを収納する供
給部6をウエハ外周で補強部の中央点の切断終了端が、
切断刃内周端(半径R)に同時に到達するよう半径Rの
円弧線上に予じめ3列並列に配置してあり、切断機構1
の切断作用面上への3枚の未加工の半導体ウエハWの配
置を容易にしてある。
In this embodiment, the supply end 6 for accommodating the unprocessed semiconductor wafer W has a cutting end at the center point of the reinforcing part on the outer circumference of the wafer.
The cutting mechanism 1 is arranged in parallel in advance in three rows on an arc line having a radius R so as to reach the inner peripheral edge (radius R) of the cutting blade at the same time.
It is easy to arrange the three unprocessed semiconductor wafers W on the cutting surface.

以上、図示した実施例の外に、位置送り機構3、切断送
り機構4を切断機構1側に連係させて、切断機構移動型
の実施例とすることも可能である。このような実施例の
場合、供給回収機構5の回転部52b,53b省略や第1移動
部51a,第2移動部51bの共通化等の簡素化が可能とな
る。
As described above, in addition to the illustrated embodiment, the position feeding mechanism 3 and the cutting feeding mechanism 4 can be linked to the cutting mechanism 1 side to form a cutting mechanism moving type embodiment. In the case of such an embodiment, it is possible to simplify the omission of the rotating parts 52b and 53b of the supply and recovery mechanism 5 and the commonization of the first moving part 51a and the second moving part 51b.

[発明の効果] 以上のように本発明に係る半導体ウエハの切断加工方法
は、請求項1によると、切断機構の1切断送り動作で複
数枚の半導体ウエハを切断することができるため、切断
加工を能率的に行なうことができる効果がある。
[Effects of the Invention] As described above, according to the semiconductor wafer cutting processing method of the present invention, a plurality of semiconductor wafers can be cut by one cutting feed operation of the cutting mechanism. There is an effect that can be done efficiently.

また、請求項2によると、不純物が拡散された不純物拡
散層等を有する薄性、硬質性のディスクリート素子基板
用の半導体ウエハの切断加工にも有効に実施が可能であ
る効果がある。
Further, according to the second aspect, there is an effect that it is possible to effectively carry out the cutting process of a thin and hard semiconductor wafer for a discrete element substrate having an impurity diffusion layer in which impurities are diffused.

また、請求項3によると、切断される半導体ウエハの配
列の特殊性から、切断加工の時間(切断ストローク)短
縮が図られ切断加工の能率がさらに向上すると共に、周
辺の一部の補強部により半導体ウエハの損傷が防止され
る効果がある。
Further, according to claim 3, due to the peculiarity of the arrangement of the semiconductor wafers to be cut, the cutting time (cutting stroke) is shortened, the efficiency of the cutting process is further improved, and the peripheral part of the reinforcing portion This is effective in preventing damage to the semiconductor wafer.

また、請求項4,5,6によると、切断工程に関連する
工程の連係を円滑にしたため、切断加工の能率をさらに
向上する効果がある。
Further, according to claims 4, 5, and 6, since the processes related to the cutting process are smoothly linked, there is an effect that the efficiency of the cutting process is further improved.

さらに、本発明に係る半導体ウエハの切断装置は、請求
項7によると、前述の切断加工方法を有効に実施できる
効果がある。
Furthermore, the semiconductor wafer cutting apparatus according to the present invention has an effect that the above-described cutting processing method can be effectively carried out.

また、請求項8,9によると、半導体ウエハの供給、回
収が円滑かつ確実となる効果がある。
Further, according to claims 8 and 9, there is an effect that supply and recovery of the semiconductor wafer can be carried out smoothly and reliably.

また、請求項10によると、半導体ウエハの供給、回収系
がコンパクト化される効果がある。
Further, according to claim 10, there is an effect that the supply and recovery system of the semiconductor wafer can be made compact.

【図面の簡単な説明】[Brief description of drawings]

第1図(A)は本発明に係る半導体ウエハの切断方法の実
施例を示す基本概略図、第1図(B)〜第1図(D)は夫々第
1図(A)の他例を示す図、第2図(A)は第1図に使用され
ている半導体ウエハを示す正面図、第2図(B)は第2図
(A)の側面図、第3図(A)は本発明に係る半導体ウエハの
切断装置の実施例を示す要部の平面図、第3図(B)は第
3図(A)の動作図、第3図(C)は第3図(B)の正面図、第
4図は本発明に係る半導体ウエハの切断装置の供給回収
機構の実施例を示す簡略図で(A)〜(H)の順に工程を示す
もの、第5図は第3図、第4図の他例を示す簡略図であ
る。 1……切断機構 2……保持機構 3……位置送り機構 4……切断送り機構 5……供給回収機構 12……切断刃 W……未加工の半導体ウエハ W′……加工済みの半導体ウエハ P……補強部
FIG. 1 (A) is a basic schematic view showing an embodiment of a semiconductor wafer cutting method according to the present invention, and FIGS. 1 (B) to 1 (D) are other examples of FIG. 1 (A), respectively. FIG. 2 (A) is a front view showing the semiconductor wafer used in FIG. 1, and FIG. 2 (B) is FIG.
FIG. 3 (A) is a side view, FIG. 3 (A) is a plan view of essential parts showing an embodiment of a semiconductor wafer cutting apparatus according to the present invention, and FIG. 3 (B) is an operation diagram of FIG. 3 (A). FIG. 3 (C) is a front view of FIG. 3 (B), and FIG. 4 is a simplified diagram showing an embodiment of a supply / recovery mechanism of a semiconductor wafer cutting apparatus according to the present invention (A) to (H). FIG. 5 is a simplified view showing another example of FIG. 3 and FIG. 1 ... Cutting mechanism 2 ... Holding mechanism 3 ... Position feeding mechanism 4 ... Cutting feeding mechanism 5 ... Supply / collection mechanism 12 ... Cutting blade W ... Unprocessed semiconductor wafer W '... Processed semiconductor wafer P: Reinforcement part

Claims (10)

【特許請求の範囲】[Claims] 【請求項1】内周型の切断機構で半導体ウエハをその厚
み巾の中心部から2分割に切断する半導体ウエハの切断
加工方法において、切断機構の切断刃の切断作用平面内
に複数枚の半導体ウエハを、切断のための送り方向と直
角的な方向へ単列状に配置し、その方向の位置関係を保
ったまま真空吸着により保持して切断し、1切断送り動
作で複数枚の半導体ウエハを切断することを特徴とする
半導体ウエハの切断加工方法。
1. A method of cutting a semiconductor wafer in which a semiconductor wafer is cut into two parts from a center portion of its thickness width by an inner peripheral cutting mechanism, wherein a plurality of semiconductors are provided in a cutting action plane of a cutting blade of the cutting mechanism. Wafers are arranged in a single row in a direction perpendicular to the feed direction for cutting, and are held and cut by vacuum suction while maintaining the positional relationship in that direction, and a plurality of semiconductor wafers are cut by one cutting feed operation. A method for cutting and processing a semiconductor wafer, which comprises cutting.
【請求項2】請求項1の半導体ウエハの切断加工方法に
おいて、半導体ウエハは両面に不純物が拡散された不純
物拡散層など厚さ方向に不均一性を有することを特徴と
する半導体ウエハの切断加工方法。
2. The method of cutting a semiconductor wafer according to claim 1, wherein the semiconductor wafer has non-uniformity in a thickness direction such as an impurity diffusion layer in which impurities are diffused on both sides. Method.
【請求項3】請求項1または2の半導体ウエハの切断加
工方法において、周縁の一部に補強部を夫々形成した複
数枚の半導体ウエハを補強部が切断送り後方側で、補強
部で覆われたウエハ外周部の補強部中央で切断終了時点
では切断刃の内周円弧に同時に到達するよう配置したこ
とを特徴とする半導体ウエハの切断加工方法。
3. The method of cutting a semiconductor wafer according to claim 1, wherein a plurality of semiconductor wafers each having a reinforcing portion formed on a part of a peripheral edge thereof are cut and fed, and the reinforcing portion is covered with the reinforcing portion on the rear side. Also, the semiconductor wafer cutting method is arranged such that the inner peripheral arc of the cutting blade is simultaneously reached at the end of cutting at the center of the reinforcing portion of the outer peripheral portion of the wafer.
【請求項4】請求項1または2または3の半導体ウエハ
の切断加工方法において、半導体ウエハの切断中に、未
加工、加工済みの半導体ウエハの供給、回収のための主
動作を完了させておくことを特徴とする半導体ウエハの
切断加工方法。
4. The method of cutting a semiconductor wafer according to claim 1, 2 or 3, wherein a main operation for supplying and collecting an unprocessed and processed semiconductor wafer is completed during cutting of the semiconductor wafer. A method of cutting and processing a semiconductor wafer, comprising:
【請求項5】請求項4の半導体ウエハの切断加工方法に
おいて、半導体ウエハを保持して切断機構へ接離する保
持機構に対する未加工、加工済みの半導体ウエハの受渡
しを切断機構を回避した位置で行なうことを特徴とする
半導体ウエハの切断加工方法。
5. The method for cutting a semiconductor wafer according to claim 4, wherein the unprocessed and processed semiconductor wafer is delivered to a holding mechanism for holding the semiconductor wafer and bringing it into and out of contact with the cutting mechanism at a position avoiding the cutting mechanism. A method for cutting and processing a semiconductor wafer, which is performed.
【請求項6】請求項4または5の半導体ウエハの切断加
工方において、未加工の複数枚の半導体ウエハの保持装
置へ引き渡し、加工済み2倍数枚のウエハの保持装置よ
りの回収のための動作を複数枚同時に行なうことを特徴
とする半導体ウエハの切断加工方法。
6. An operation for delivering a plurality of unprocessed semiconductor wafers to a holding device and collecting the processed double wafers from the holding device in the method of cutting a semiconductor wafer according to claim 4 or 5. A method for cutting a semiconductor wafer, characterized in that a plurality of wafers are simultaneously processed.
【請求項7】高速回転して半導体ウエハをその厚み巾の
中心部から切断して2分割する内周型の切断刃を切断作
用面が垂直になるように装備した切断機構と、複数枚の
未加工の半導体ウエハを切断機構の切断作用平面内に保
持し2倍数枚の加工済みの半導体ウエハとなっても保持
を継続する保持機構と、切断機構、保持機構を近接、離
間するように水平方向へ相対移動させる位置送り機構
と、切断機構、保持機構を平行逆移動するように垂直方
向または水平方向へ相対移動させる切断送り機構と、保
持機構と未加工の半導体ウエハの供給部、加工済みの半
導体ウエハの回収部との間で複数枚、2倍数枚のこれ等
半導体ウエハを同時に搬送受け渡しする供給回収機構と
を備えてなり、保持機構は切断機構から離間した位置で
保持機能を断続して供給回収機構との間で未加工、加工
済みの半導体ウエハの受け渡しを行なうように動作設定
され、位置送り機構は保持機構を切断機構に近接させた
位置で切断機構の切断作用面に未加工の半導体ウエハの
厚み巾の中心部を割出すように動作設定され、供給回収
機構は半導体ウエハの切断中に加工済みの半導体ウエハ
を回収部へ搬送して収納し新たな未加工の半導体ウエハ
を供給部から取出して搬送を完了し待機するように動作
設定されてなる半導体ウエハの切断加工装置。
7. A cutting mechanism equipped with an inner peripheral cutting blade, which is rotated at a high speed to cut a semiconductor wafer from a central portion of its thickness width and divides the wafer into two, so that a cutting action surface becomes vertical, and a plurality of cutting mechanisms. A holding mechanism that holds unprocessed semiconductor wafers in the cutting action plane of the cutting mechanism and continues to hold even if there are twice as many processed semiconductor wafers, and a horizontal position so that the cutting mechanism and the holding mechanism come close to and separate from each other. Position feed mechanism that moves relative to each other in the vertical direction, cutting feed mechanism that moves the cutting mechanism and holding mechanism relative to each other in the vertical direction or horizontal direction so as to move in parallel and reverse, the holding mechanism and the unprocessed semiconductor wafer supply unit, processed And a supply / recovery mechanism that simultaneously conveys and delivers a plurality of semiconductor wafers and a doubled number of these semiconductor wafers to and from the semiconductor wafer recovery unit. The holding mechanism intermittently holds the holding function at a position separated from the cutting mechanism. hand The operation is set so as to transfer the unprocessed and processed semiconductor wafers to and from the supply / recovery mechanism, and the position feed mechanism moves the unprocessed cutting surface of the cutting mechanism at the position where the holding mechanism is brought close to the cutting mechanism. The operation is set to index the central part of the thickness of the semiconductor wafer, and the supply / recovery mechanism conveys the processed semiconductor wafer to the recovery part during the cutting of the semiconductor wafer and stores it to supply a new unprocessed semiconductor wafer. An apparatus for cutting and processing a semiconductor wafer, which is set so that it is taken out of the unit, completes the transportation, and stands by.
【請求項8】請求項7の半導体ウエハの切断加工装置に
おいて、保持機構は間隔調整可能な相対する2つの保持
盤を複数組備え、供給回収機構は片面に吸着部を有する
複数個の供給側ハンドと両面に吸着部を有する複数個の
回収側ハンドとを備えてなり、保持機構は少なくとも一
方の保持盤で未加工の半導体ウエハを保持し他方の保持
盤が遅くとも未加工の半導体ウエハの切断終了直前に保
持機能を動作して切断2分割された加工済の各半導体ウ
エハの保持を継続し、かつ、回収側ハンドが加工済みの
半導体ウエハの間に差入れられ加工済みの両半導体ウエ
ハを同時に引き受け供給側ハンドが未加工の半導体ウエ
ハを引き渡すことができるように保持盤の間隔を拡間す
るように動作設定されたことを特徴とする半導体ウエハ
の切断加工装置。
8. A semiconductor wafer cutting apparatus according to claim 7, wherein the holding mechanism is provided with a plurality of sets of two opposing holding discs whose gaps can be adjusted, and the supply / recovery mechanism is provided with a plurality of supply sides having suction portions on one surface. The holding mechanism includes a hand and a plurality of collection-side hands having suction parts on both sides, and the holding mechanism holds the unprocessed semiconductor wafer by at least one holding plate and the other holding plate cuts the unprocessed semiconductor wafer at the latest. Immediately before the end, the holding function is operated to continue holding each of the processed semiconductor wafers that have been cut into two, and the collecting side hand is inserted between the processed semiconductor wafers to simultaneously process both processed semiconductor wafers. An apparatus for cutting and processing a semiconductor wafer, characterized in that operation is set so as to widen an interval of holding plates so that a hand of a receiving supply side can hand over an unprocessed semiconductor wafer.
【請求項9】請求項7または8の半導体ウエハの切断加
工装置において、供給部、回収部は半導体ウエハを並列
するカセット構造からなり半導体ウエハの取出し、収納
毎に一定ピッチで並列方向へ移動する駆動部を備え、供
給回収機構は垂直な動作平面内で機能することを特徴と
する半導体ウエハの切断加工装置。
9. The semiconductor wafer cutting apparatus according to claim 7 or 8, wherein the supply unit and the recovery unit have a cassette structure in which the semiconductor wafers are arranged in parallel, and each time the semiconductor wafer is taken out and stored, the semiconductor wafer is moved in the parallel direction at a constant pitch. An apparatus for cutting and processing a semiconductor wafer, comprising a drive unit, and the supply / recovery mechanism functions in a vertical operation plane.
【請求項10】請求項7または8または9の半導体ウエ
ハの切断加工装置において、供給回収機構は未加工の半
導体ウエハの供給系と加工済の半導体ウエハの回収系と
を共通系列に隣接一体化したことを特徴とする半導体ウ
エハの切断加工装置。
10. The semiconductor wafer cutting / processing apparatus according to claim 7, 8 or 9, wherein the supply / recovery mechanism adjoins a supply system for the unprocessed semiconductor wafer and a recovery system for the processed semiconductor wafer in a common series. A semiconductor wafer cutting and processing apparatus characterized by the above.
JP16438390A 1990-06-22 1990-06-22 Method and device for cutting semiconductor wafer Expired - Fee Related JPH0612769B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16438390A JPH0612769B2 (en) 1990-06-22 1990-06-22 Method and device for cutting semiconductor wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16438390A JPH0612769B2 (en) 1990-06-22 1990-06-22 Method and device for cutting semiconductor wafer

Publications (2)

Publication Number Publication Date
JPH0461121A JPH0461121A (en) 1992-02-27
JPH0612769B2 true JPH0612769B2 (en) 1994-02-16

Family

ID=15792087

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16438390A Expired - Fee Related JPH0612769B2 (en) 1990-06-22 1990-06-22 Method and device for cutting semiconductor wafer

Country Status (1)

Country Link
JP (1) JPH0612769B2 (en)

Also Published As

Publication number Publication date
JPH0461121A (en) 1992-02-27

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