JPH06117538A - Vacuum container - Google Patents
Vacuum containerInfo
- Publication number
- JPH06117538A JPH06117538A JP28693192A JP28693192A JPH06117538A JP H06117538 A JPH06117538 A JP H06117538A JP 28693192 A JP28693192 A JP 28693192A JP 28693192 A JP28693192 A JP 28693192A JP H06117538 A JPH06117538 A JP H06117538A
- Authority
- JP
- Japan
- Prior art keywords
- vacuum
- vacuum container
- layers
- baking
- treatment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
- B01J3/006—Processes utilising sub-atmospheric pressure; Apparatus therefor
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Pressure Vessels And Lids Thereof (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は真空容器に係り、特に半
導体ウエハ又はガラス基板等を保管する際に用いる真空
保管庫又は真空ボックス等の真空容器に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a vacuum container, and more particularly to a vacuum container such as a vacuum storage or a vacuum box used for storing semiconductor wafers or glass substrates.
【０００２】[0002]
【従来の技術】真空中においては、気流がないかあって
も極くわずかであり、真空容器の壁に付着している粒子
を剥離させたり、床面の粒子を舞上げたりするようなこ
とはない。従って、真空中ではクラス０（零）の空間を
創りだせる可能性があるので、近年では、ウエハや液晶
パネルを作るためのガラス基板の保管を真空中で行う傾
向がある。2. Description of the Related Art In a vacuum, even if there is no air flow, it is very small, and particles such as particles adhering to the walls of a vacuum vessel are peeled off or particles on the floor are soared. There is no. Therefore, since there is a possibility that a space of class 0 (zero) can be created in a vacuum, there is a tendency in recent years to store a glass substrate for making a wafer or a liquid crystal panel in a vacuum.
【０００３】[0003]
【発明が解決しようとする課題】保管中の真空度は高け
れば高い程好ましいが、ウエハの自然酸化膜の成長抑制
などを考えると１０-6〜１０-7Ｔｏｒｒの真空度があれ
ば十分である。しかし、現状の技術では、たとえルーツ
ポンプとターボ分子ポンプを組み合わせた排気系を使っ
たとしても、１２０℃以上の温度で１回以上真空容器を
ベーキングし水（Ｈ2Ｏ）分子を真空容器の内壁から脱
離させなくては１０-6〜１０-7Ｔｏｒｒの真空度を達成
することはなかなか難しい。The higher the degree of vacuum during storage, the more preferable it is. However, considering the suppression of the growth of the natural oxide film on the wafer, a degree of vacuum of 10 -6 to 10 -7 Torr is sufficient. is there. However, according to the current technology, even if an exhaust system combining a roots pump and a turbo molecular pump is used, the vacuum container is baked at least once at a temperature of 120 ° C. or more to remove water (H 2 O) molecules from the vacuum container. It is quite difficult to achieve a vacuum degree of 10 −6 to 10 −7 Torr without detaching it from the inner wall.
【０００４】長時間（１週間程度）真空排気を行ったと
しても、ベーキング無しでは１０-6〜１０-7Ｔｏｒｒに
するのは困難である。また、一度ベーキングした真空容
器を大気開放してしまうと、大気中のＨ2Ｏなどのガス
が容器内壁に吸着してしまい、再び１０-6〜１０-7Ｔｏ
ｒｒの真空度を達成するためには再度ベーキングを行わ
なければならない。Even if vacuum evacuation is performed for a long time (about one week), it is difficult to achieve 10 -6 to 10 -7 Torr without baking. Further, if the vacuum container once baked is opened to the atmosphere, gas such as H 2 O in the atmosphere is adsorbed on the inner wall of the container, and again 10 −6 to 10 −7 To is obtained.
Baking must be done again to achieve a vacuum of rr.
【０００５】真空保管庫や真空ボックスのようにウエハ
やガラス基板の搬入・搬出を何度も繰り返し、そのつど
容器内壁が大気にさらされるような真空容器の場合、大
気開放のたびごとにベーキングを繰り返すのは、著しく
不合理である。In the case of a vacuum container such as a vacuum storage or a vacuum box in which wafers and glass substrates are repeatedly carried in and out, and the inner wall of the container is exposed to the atmosphere each time, baking is performed every time the atmosphere is opened. To repeat is extremely absurd.
【０００６】本発明は上述の事情に鑑みなされたもの
で、真空保管庫または真空ボックス等の真空容器の内表
面にＢＮ（ボロンナイトライド）処理し、ベーキングせ
ずに、または１００℃以下の低温ベーキングでも、短時
間で１０-6〜１０-7Ｔｏｒｒの高真空が達成できる真空
容器を提供することを目的とする。The present invention has been made in view of the above circumstances, and the inner surface of a vacuum container such as a vacuum storage or a vacuum box is treated with BN (boron nitride) without baking or at a low temperature of 100 ° C. or lower. An object of the present invention is to provide a vacuum container capable of achieving a high vacuum of 10 −6 to 10 −7 Torr even in baking in a short time.
【０００７】[0007]
【課題を解決するための手段】前述した目的を達成する
ため、本発明の真空容器は真空容器の内表面にＢＮ（ボ
ロンナイトライド）層を形成したことを特徴とするもの
である。本発明の真空容器は、真空保管庫及び真空ボッ
クス等の真空中で半導体ウエハやガラス基板等を収容す
るための容器全般を含む概念である。In order to achieve the above-mentioned object, the vacuum container of the present invention is characterized in that a BN (boron nitride) layer is formed on the inner surface of the vacuum container. The vacuum container of the present invention is a concept including all containers for accommodating semiconductor wafers, glass substrates and the like in a vacuum such as a vacuum storage and a vacuum box.
【０００８】[0008]
【作用】ベーキングすることなく、又は１００℃以下の
低温ベーキングを行い、短時間内に１０-6〜１０-7Ｔｏ
ｒｒ程度の高真空を得るためには、真空容器の材質はＨ
2Ｏ分子等の気体分子の付着確率や平均滞留時間が小さ
いということが要求される。材料表面からのガス放出が
小さい材料としてＢＮ材が上げられる。[Operation] Without baking, or by baking at a low temperature of 100 ° C. or less, 10 -6 to 10 -7 To within a short time
In order to obtain a high vacuum of about rr, the material of the vacuum container is H
It is required that the adhesion probability of gas molecules such as 2 O molecules and the average residence time are small. A BN material is an example of a material that emits less gas from the surface of the material.
【０００９】真空排気・真空リーク・大気開放を繰り返
し、ウエハ及びガラス基板を保管する真空容器におい
て、これら真空容器の内表面にＢＮ処理を施せば、その
内表面にガス吸着量の少ない材料であるＢＮ層が形成さ
れるので大気開放してもガスの吸着量が少ない。従っ
て、ガスの放出量が小さい（ガスの放出速度が遅い）の
で、ベーキングすることなく、または１００℃以下の低
温ベーキングにより１０-6〜１０-7Ｔｏｒｒ程度の高真
空の達成が短時間で可能となる。In a vacuum container for storing wafers and glass substrates by repeating vacuum evacuation, vacuum leak, and opening to the atmosphere, if BN treatment is applied to the inner surfaces of these vacuum containers, the inner surface of the vacuum container is a material with a small amount of gas adsorption. Since the BN layer is formed, the amount of adsorbed gas is small even if it is opened to the atmosphere. Therefore, the amount of gas released is small (the gas release rate is slow), so a high vacuum of about 10 -6 to 10 -7 Torr can be achieved in a short time without baking or by low-temperature baking at 100 ° C or less. Becomes
【００１０】[0010]
【実施例】以下、本発明に係る真空容器の第１の実施例
を図１を参照して説明する。図１は本発明に係る真空容
器が、真空ボックス１である場合の断面図であり、真空
ボックス１の内表面にＢＮ層７が形成されている。すな
わち、真空ボックス１を構成するボックス本体２及び蓋
体３の真空にさらされる内表面にＢＮ処理を施し、ＢＮ
層７を形成する。Ｏリング４によってシールドする部分
及び真空排気・真空リークするポート口５にはＢＮ処理
を施さない。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A first embodiment of the vacuum container according to the present invention will be described below with reference to FIG. FIG. 1 is a cross-sectional view when the vacuum container according to the present invention is a vacuum box 1, and a BN layer 7 is formed on the inner surface of the vacuum box 1. That is, the BN treatment is performed on the inner surfaces of the box body 2 and the lid body 3 that form the vacuum box 1 that are exposed to the vacuum.
Form the layer 7. No BN treatment is applied to the portion shielded by the O-ring 4 and the port opening 5 for vacuum exhaust / vacuum leak.
【００１１】真空ボックス１の内表面へのＢＮ処理は、
マイクロＣＶＤ法、ＲＦプラズマＣＶＤ法、ＡＲＥ（Ac
tivated Reactive Evaporation）法、レーザＣＶＤ法、
イオンビーム蒸着法、イオンプレーティング法、真空蒸
着法等が挙げられる。The BN treatment on the inner surface of the vacuum box 1 is
Micro CVD method, RF plasma CVD method, ARE (Ac
tivated Reactive Evaporation) method, laser CVD method,
The ion beam vapor deposition method, the ion plating method, the vacuum vapor deposition method, etc. are mentioned.
【００１２】真空ボックス１に表面処理を施すＢＮ材の
構造はｃ−ＢＮ、ｈ−ＢＮのいずれでも良い。真空ボッ
クス１の内表面に形成されるＢＮ層の厚さは、１μｍ〜
１ｍｍが好ましく、より好ましくは、５０μｍである。The structure of the BN material for surface-treating the vacuum box 1 may be either c-BN or h-BN. The thickness of the BN layer formed on the inner surface of the vacuum box 1 is 1 μm to
It is preferably 1 mm, more preferably 50 μm.
【００１３】真空ボックス１の材質は、ＳＵＳ（ステン
レス）材、Ａｌ（アルミニウム）材等、真空容器を構成
することができる材質であれば良い。尚、ＳＵＳ材を用
いる場合には、上述のＢＮ処理方法以外にＢ、Ｎを析出
させる方法も有用である。The material of the vacuum box 1 may be any material such as SUS (stainless steel) material, Al (aluminum) material, etc. that can form a vacuum container. When using a SUS material, a method of depositing B and N is also useful in addition to the above-mentioned BN treatment method.
【００１４】次に、本発明に係る真空容器の第２の実施
例を図２を参照して説明する。図２は、本発明に係る真
空容器が、真空保管庫である場合の断面図であり、真空
保管庫１１の内表面にＢＮ層１５が形成されている。す
なわち、真空保管庫１１の内表面にＢＮ処理を施し、保
管されるウエハ及びガラス基板１４を搬入・搬出する扉
１２の内表面及び真空排気・真空リークするポート口１
３にはＢＮ処理を施さない。Next, a second embodiment of the vacuum container according to the present invention will be described with reference to FIG. FIG. 2 is a cross-sectional view when the vacuum container according to the present invention is a vacuum storage, and the BN layer 15 is formed on the inner surface of the vacuum storage 11. That is, the BN process is performed on the inner surface of the vacuum storage 11, and the inner surface of the door 12 for loading / unloading the wafers and the glass substrates 14 to be stored and the port opening 1 for vacuum exhaust / vacuum leak
No BN treatment is applied to No. 3.
【００１５】本実施例において、ＢＮ処理方法、ＢＮ
材、ＢＮ層の厚さ及び真空保管庫の材質は、第１の実施
例の場合と同様である。In this embodiment, the BN processing method and the BN
The material, the thickness of the BN layer, and the material of the vacuum storage are the same as those in the first embodiment.
【００１６】[0016]
【発明の効果】以上説明したように、本発明によれば、
真空保管庫または真空ボックス等の真空容器の内表面に
ＢＮ処理を施し、ＢＮ層を形成することにより、ベーキ
ングすることなく、または１００℃以下の低温ベーキン
グを行うだけで１０-6〜１０-7Ｔｏｒｒの高真空を短時
間で達成することができる。As described above, according to the present invention,
By performing BN treatment on the inner surface of a vacuum container such as a vacuum storage or a vacuum box to form a BN layer, baking is not performed or low-temperature baking at 100 ° C. or less is performed 10 −6 to 10 −7. A high vacuum of Torr can be achieved in a short time.
【図１】本発明に係る真空容器の第１の実施例を示す断
面図である。FIG. 1 is a sectional view showing a first embodiment of a vacuum container according to the present invention.
【図２】本発明に係る真空容器の第２の実施例を示す断
面図である。FIG. 2 is a sectional view showing a second embodiment of the vacuum container according to the present invention.
１ 真空ボックス ２ ボックス本体 ３ 蓋体 ４ Ｏリング ５，１３ ポート口 ６，１４ ウエハまたはガラス基板 ７，１５ ＢＮ層 １１ 真空保管庫 １２ 扉 1 Vacuum Box 2 Box Main Body 3 Lid 4 O Ring 5, 13 Port Port 6, 14 Wafer or Glass Substrate 7, 15 BN Layer 11 Vacuum Storage Cabinet 12 Door
Claims (1)
ライド）層を形成したことを特徴とする真空容器。1. A vacuum container having a BN (boron nitride) layer formed on the inner surface of the vacuum container.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28693192A JPH06117538A (en) | 1992-10-01 | 1992-10-01 | Vacuum container |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28693192A JPH06117538A (en) | 1992-10-01 | 1992-10-01 | Vacuum container |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH06117538A true JPH06117538A (en) | 1994-04-26 |
Family
ID=17710815
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP28693192A Pending JPH06117538A (en) | 1992-10-01 | 1992-10-01 | Vacuum container |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH06117538A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002155938A (en) * | 2000-02-01 | 2002-05-31 | Toto Ltd | Hydrostatic gas bearing |
-
1992
- 1992-10-01 JP JP28693192A patent/JPH06117538A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002155938A (en) * | 2000-02-01 | 2002-05-31 | Toto Ltd | Hydrostatic gas bearing |
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