JPH06112136A - Vertical reduced pressure vapor growth apparatus - Google Patents

Abstract

PURPOSE:To prevent the heating and oxidation of a semiconductor substrate, which is housed in a boat beforehand, with the radiated heat from a boat, which is taken out of a reaction furnace. CONSTITUTION:In a vertical pressure-reduced vapor growth apparatus, an isolating tube 1 for covering boat 2a, which isolates the heat radiated from a boat 2 that A piece of rope, which lifts and lowers the isolating tube 1, is wound 9 a boat 9 is taken out of a reaction furnace 3, is provided. A piece of rope, which lifts and lowers the isolating tube l, is wound around a reel 11. A counter weight 12 is provided at one end of the rope. When the boat 2 is taken out of the reaction furnace 3, the boat 2a arranged on a stage 7 is covered with the isolating tube 1. Thus, a the heat radiated from the boat 2 is isolated. Inert gas is blown through an exhaust nozzle port 10 as required, and the inflow of air is blocked.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a vertical reduced pressure vapor phase growth apparatus, and more particularly to a vertical reduced pressure vapor phase growth apparatus having a boat other than a boat mounted on a lid member that opens and closes an opening of a reactor.

[0002]

2. Description of the Related Art Conventionally, in this type of vertical vacuum vapor deposition apparatus, a second boat is prepared separately from the first boat housed in a reaction furnace, and a semiconductor substrate to be preliminarily processed is prepared in the second boat. This is an apparatus in which the next boat is put in immediately after the processing of the semiconductor substrate of the first boat stored in the reaction furnace is completed, and the preparation time is shortened.

FIG. 2 is a sectional view of a vertical type reduced pressure vapor phase growth apparatus showing a conventional example. As shown in FIG. 2, this vertical vacuum vapor phase growth apparatus comprises a reactor 3 having an exhaust port 6 for decompressing the inside, a gas supply port 5 for introducing a reaction gas, and an opening downward. A heater 4 arranged around the reaction furnace 3, a boat 2 for accommodating a plurality of semiconductor substrates side by side, and a lid member for mounting the boat 2 in and out of the reaction furnace 3 to open and close the opening. Seal cap 8,
An elevating mechanism 9 for elevating and lowering the seal cap 8 and a boat 2a for mounting a plurality of semiconductor substrates side by side while being mounted on the stage 7 arranged at a predetermined distance from the seal cap 8 are provided.

Next, the operation of this vertical vacuum vapor deposition apparatus will be described. First, the boat 2 accommodating a plurality of semiconductor substrates is preliminarily transferred from the stage 7 to the seal cap 8 by a handling arm (not shown). Next, the lifting cap 9 raises the seal cap 8 to insert the boat 2 into the reaction furnace 3 and close the opening of the reaction furnace 3. Next, the reaction furnace 3 is evacuated from the exhaust port 6 to reduce the pressure. Then, a raw material gas is introduced from the gas supply port 5 to form a thin film on the semiconductor substrate of the board 2. On the other hand, the boat 2a in which the semiconductor substrates are stored is placed by the handling arm on the stage 7 which has become empty. Then, the boat 2 after the treatment is pulled out from the reaction furnace by lowering the seal cap 8, and is moved from the seal cap 8 to the outside of the apparatus by the handling arm. Again, the boat 2a placed on the stage 7 is transferred to the seal cap 8 by the handling arm and inserted into the reaction furnace to form a thin film on the semiconductor substrate.

In this way, the boats are sequentially moved to the arrows A, B,
It moved to C and operated a plurality of boats efficiently to raise the operating rate of the equipment and enhance productivity.

[0006]

However, in the above-described conventional vertical reduced pressure vapor phase growth apparatus, when the boat is pulled out from the reaction furnace, the semiconductor substrate of the boat on the stage is heated by the residual heat of the boat, and it is exposed to the air. There is a problem that a desired film is not formed by being oxidized by oxygen of the above.

An object of the present invention is to provide a vertical reduced pressure vapor phase growth apparatus capable of forming a desired film without oxidizing a semiconductor substrate stored in a preliminary boat.

[0008]

The first vertical depressurized vapor phase growth apparatus of the present invention has an exhaust port for depressurizing the inside and a gas supply port for introducing a reaction gas and has an opening downward. A reaction furnace having the same, a heater arranged around the reaction furnace, a first boat for accommodating a plurality of semiconductor substrates side by side, the first boat is mounted and goes in and out of the reaction furnace to open the opening. A lid member that opens and closes, an elevating mechanism that elevates and lowers the lid member, a second boat that is mounted on a stage disposed near the lid member and that houses a plurality of semiconductor substrates side by side, and the second boat. A shielding member for wrapping the boat, and when the first board is pulled out from the reaction furnace, the shielding member covers the second boat, and the semiconductor substrate of the first boat is cooled to a predetermined temperature. In front of the second boat later It is characterized by exposing from the shielding member. When the second vertical type reduced pressure vapor phase growth apparatus is provided with a jet port of an inert gas in the shielding member in addition to the first vertical type reduced pressure growth apparatus, and the shielding member is covered with the second boat. In addition, the inactive gas is sprayed on.

[0009]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, the present invention will be described with reference to the drawings.

FIG. 1 is a sectional view of a vertical reduced pressure vapor phase growth apparatus showing an embodiment of the present invention. As shown in FIG. 1, this vertical type reduced pressure vapor phase growth apparatus includes a shield cylinder 1 for covering a boat 2a, which stores a preliminary semiconductor substrate and is placed on a stage 7, and a rope and reel 11 for moving the shield cylinder 1 up and down. And the counterweight 12 is provided. Otherwise, it is the same as the conventional example.

As described in the conventional example, when the boat 2 is pulled out from the reaction furnace 3, the vertical depressurized vapor phase growth apparatus covers the boat 2a with the shielding tube 1 and pulls out the boat 2 from the pulled-out boat 2. It is to block the radiated heat. In this way, the semiconductor substrate of the boat 2a is not heated and is not oxidized by oxygen in the air. Also, if necessary,
It is more effective to provide the shield cylinder 1 with a jet port 10 for blowing nitrogen downward so as to positively expel the air trying to enter the shield cylinder 1.

In this embodiment, a cylindrical shield member is used for shielding radiant heat, but when the two boards are widely spaced, a member such as a shield plate may be used in consideration of the surroundings of the device. . In addition, the mechanism for raising and lowering the shielding member is defined by rule 11
Instead of hoisting and hoisting the rope, a hoisting and hoisting mechanism simply by a pneumatic cylinder may be used. In short, the sequential operation of the boats indicated by arrows A, B and C and the operation of arrow D of the shielding tube 1 can be automatically performed smoothly. Any mechanism can be used as long as it is easy to perform.

[0013]

As described above, according to the present invention, the semiconductor substrate of the boat arranged near the drawn boat is provided by providing the blocking member for blocking the heat radiated from the boat drawn from the reactor. Is not heated and is not oxidized by oxygen in the air, which has the effect of forming a normal film.

[Brief description of drawings]

FIG. 1 is a sectional view of a vertical reduced pressure vapor phase growth apparatus showing an embodiment of the present invention.

FIG. 2 is a cross-sectional view of a vertical type reduced pressure vapor deposition apparatus showing a conventional example.

[Explanation of symbols]

 1 Shielding Cylinder 2, 2a Boat 3 Reactor 4 Heater 5 Gas Supply Port 6 Exhaust Port 7 Stage 8 Seal Cap 9 Elevating Mechanism 10 Jet Outlet 11 Reel 12 Counterweight

Claims (2)

[Claims] 1. A reaction furnace having an exhaust port for decompressing the inside and a gas supply port for introducing a reaction gas and having an opening downward, a heater arranged around the reaction furnace, and a semiconductor substrate. A first boat for accommodating a plurality of them in a line, a lid member for mounting the first boat on and off the reactor to open and close the opening, an elevating mechanism for elevating and lowering the lid member, and the lid member A second boat which is mounted on a stage disposed in the vicinity of the second board and accommodates a plurality of semiconductor substrates arranged side by side; and a shielding member which wraps the second boat, and the first board is provided in the reactor. The second boat is covered with the shielding member when being pulled out further, and the second boat is exposed from the shielding member after the semiconductor substrate of the first boat is cooled to a predetermined temperature. Type decompression gas phase formation Long device. 2. The vertical type according to claim 1, wherein the shielding member is provided with an inert gas ejection port, and the inert gas is sprayed when the shielding member is covered with the second boat. Low pressure vapor phase growth equipment.