JP4883804B2 - Semiconductor heat treatment method and semiconductor heat treatment apparatus - Google Patents

Semiconductor heat treatment method and semiconductor heat treatment apparatus Download PDF

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JP4883804B2
JP4883804B2 JP2007504566A JP2007504566A JP4883804B2 JP 4883804 B2 JP4883804 B2 JP 4883804B2 JP 2007504566 A JP2007504566 A JP 2007504566A JP 2007504566 A JP2007504566 A JP 2007504566A JP 4883804 B2 JP4883804 B2 JP 4883804B2
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heat treatment
boat
cooling cylinder
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furnace
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荘平 辻
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Koyo Thermo Systems Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67201—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the load-lock chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber vertical transfer of a batch of workpieces
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S414/00—Material or article handling
    • Y10S414/135—Associated with semiconductor wafer handling
    • Y10S414/137—Associated with semiconductor wafer handling including means for charging or discharging wafer cassette
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S414/00—Material or article handling
    • Y10S414/135—Associated with semiconductor wafer handling
    • Y10S414/137—Associated with semiconductor wafer handling including means for charging or discharging wafer cassette
    • Y10S414/138—Wafers positioned vertically within cassette

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
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Description

本発明は、半導体ウエハ等の半導体部材をボートに搭載して酸化膜形成や不純物拡散、気相成長、アニール等の熱処理を行う半導体熱処理方法及び半導体熱処理装置に関するものである。   The present invention relates to a semiconductor heat treatment method and a semiconductor heat treatment apparatus in which a semiconductor member such as a semiconductor wafer is mounted on a boat and heat treatment such as oxide film formation, impurity diffusion, vapor phase growth, and annealing is performed.

従来の半導体熱処理装置には、半導体ウエハをボートに搭載して熱処理炉内に移送し熱処理を行うと共に、熱処理を終えた後も、この熱処理炉内で所定の取出し可能温度まで冷却を行うものがあった（例えば、日本特許第２６４９６１１号を参照。）。   In the conventional semiconductor heat treatment apparatus, a semiconductor wafer is mounted on a boat and transferred into a heat treatment furnace to perform heat treatment, and after the heat treatment is finished, the semiconductor wafer is cooled to a predetermined takeout temperature. (See, for example, Japanese Patent No. 2649611).

ところが、このように熱処理を行うたびに炉内を冷却後の所定の取出し可能温度から再び処理温度まで加熱していたのでは、この熱処理炉の蓄熱エネルギーのロスが大きくなり、しかも、熱処理に要する時間だけでなく冷却に要する時間も熱処理炉を占有するので、作業全体のスループットが向上しないという問題があった。   However, if the inside of the furnace is heated from the predetermined take-out temperature after cooling to the treatment temperature again every time the heat treatment is performed in this way, the heat storage energy loss of the heat treatment furnace becomes large and the heat treatment is required. Since not only the time but also the time required for cooling occupies the heat treatment furnace, there is a problem in that the throughput of the entire operation is not improved.

また、従来の半導体熱処理装置には、熱処理炉の下方に炉口を通じて連通するロードロック室を設け、熱処理を終えた半導体ウエハをボートと共にこのロードロック室内に移送して冷却を行うようにしたものもある（例えば、日本特開２００１−６８４２５号および日本特開２００１−１１８８３９号を参照。）。   In addition, in the conventional semiconductor heat treatment apparatus, a load lock chamber communicating with the furnace port is provided below the heat treatment furnace, and the semiconductor wafer after the heat treatment is transferred to the load lock chamber together with the boat for cooling. (See, for example, Japanese Patent Laid-Open No. 2001-68425 and Japanese Patent Laid-Open No. 2001-118839).

このように半導体ウエハの冷却をロードロック室内で行うようにすれば、熱処理炉内の温度を前記所定の取出し可能温度まで下げる必要がないので、この熱処理炉の蓄熱エネルギーのロスが少なくなる。ところが、この半導体熱処理装置の場合にも、ロードロック室内で冷却される半導体ウエハのボートが熱処理炉の炉口下方を塞いでいるので、次の未処理の半導体ウエハを熱処理しようとしても、前の半導体ウエハの冷却が完了するまで熱処理炉が使用できず、作業全体のスループットが上がらないという問題は解消されなかった。   If the semiconductor wafer is cooled in the load lock chamber in this way, it is not necessary to lower the temperature in the heat treatment furnace to the predetermined temperature that can be taken out, so that the heat storage energy loss of the heat treatment furnace is reduced. However, even in the case of this semiconductor heat treatment apparatus, since the boat of semiconductor wafers cooled in the load lock chamber blocks the lower part of the furnace port of the heat treatment furnace, even if an attempt is made to heat treat the next unprocessed semiconductor wafer, The problem that the heat treatment furnace could not be used until the cooling of the semiconductor wafer was completed, and the throughput of the entire operation was not improved, was not solved.

ここで、前記ロードロック室内に移送したボートをさらにロードロック室の外に出して冷却することができれば、次の未処理の半導体ウエハを搭載したボートを熱処理炉に移送することが可能になると考えられる。しかしながら、ロードロック室内は、外部から気密状態にされて、内部に非酸化性の、通常は不活性のガスを満たしたり、このガスを流したり、或いは減圧することが可能な空間であり、熱処理による余熱が残る半導体ウエハをこのロードロック室から外に出して外部の清浄空気に触れさせることはできない。   Here, if the boat transferred to the load lock chamber can be further removed from the load lock chamber and cooled, the next boat loaded with unprocessed semiconductor wafers can be transferred to the heat treatment furnace. It is done. However, the load lock chamber is a space that is airtight from the outside and can be filled with a non-oxidizing, usually inert gas, flowed, or decompressed. The semiconductor wafer in which the residual heat due to the above remains cannot be taken out of the load lock chamber and brought into contact with the external clean air.

また、ロードロック室を広くして、熱処理済みの半導体ウエハのボートを熱処理炉からこのロードロック室内に移送した後に炉口下方から待避させておき、これによって熱処理の間に未処理の半導体ウエハを搭載しておいたボートを炉口下方に移送して熱処理炉に移送することにより、前の半導体ウエハの冷却の間に次の半導体ウエハの熱処理を行うことも考えられる。   In addition, the load lock chamber is widened, and a boat of heat-treated semiconductor wafers is transferred from the heat treatment furnace into the load lock chamber and then retracted from the bottom of the furnace port, whereby unprocessed semiconductor wafers are removed during the heat treatment. It is also conceivable that the next semiconductor wafer is heat-treated during the cooling of the previous semiconductor wafer by transferring the mounted boat below the furnace port and transferring it to the heat treatment furnace.

しかしながら、この場合には、未処理の半導体ウエハと冷却中の余熱が残る半導体ウエハやそのボートとが同じロードロック室内に存在することになり、この未処理の半導体ウエハが冷却中の半導体ウエハやボートの熱によって悪影響を受けるおそれがあるという問題が生じる。さらに、このために未処理の半導体ウエハのボートを冷却中の半導体ウエハのボートからできるだけ離すようにすることも考えられるが、このためにはロードロック室内を極めて広くする必要があり、半導体熱処理装置の設備コストが増加し、また、設置スペースが大きくなりすぎるという問題が生じる。また、もしこのような冷却を行ったとしても、冷却に要する時間は依然としてかなり長くなると考えられる。スループットを上げる上で冷却時間の更なる短縮が必要となる場合もある。   However, in this case, the unprocessed semiconductor wafer, the semiconductor wafer in which the remaining heat during cooling, and the boat thereof are present in the same load lock chamber. The problem arises that it may be adversely affected by boat heat. Further, for this purpose, it is conceivable to keep the unprocessed semiconductor wafer boat as far as possible from the semiconductor wafer boat being cooled. To this end, it is necessary to make the load lock chamber very wide. The equipment cost increases, and the installation space becomes too large. Moreover, even if such cooling is performed, it is considered that the time required for cooling is still considerably long. In order to increase the throughput, it may be necessary to further shorten the cooling time.

特許第２６４９６１１号公報Japanese Patent No. 2649611 特開２００１−６８４２５号公報JP 2001-68425 A 特開２００１−１１８８３９号公報JP 2001-118839 A

本発明は、熱処理済みの半導体部材を冷却筒に収納し炉口下方から待避させて冷却することにより、熱処理作業全体のスループットを大幅に改善しつつ未処理の半導体部材に悪影響を与えることなく並行して熱処理が可能となる半導体熱処理方法及び半導体熱処理装置を提供しようとするものである。   The present invention accommodates a heat-treated semiconductor member in a cooling cylinder, retracts it from the bottom of the furnace port, and cools it, thereby greatly improving the throughput of the whole heat treatment operation and without adversely affecting unprocessed semiconductor members. Thus, it is an object of the present invention to provide a semiconductor heat treatment method and a semiconductor heat treatment apparatus that enable heat treatment.

請求項１の半導体熱処理方法は、熱処理炉の下方に炉口を通じて連通するロードロック室内で、空の冷却筒を炉口下方に移送する工程と、熱処理済みの半導体部材を搭載した熱処理炉内のボートをこの空の冷却筒に収納する工程と、この熱処理済みの半導体部材を搭載したボートを収納した冷却筒をロードロック室内で炉口下方から待避させる工程と、未処理の半導体部材を搭載した別のボートをロードロック室内で炉口下方に移送する工程と、このボートを熱処理炉内に移送して熱処理を行う工程と、待避していた冷却筒から熱処理後の冷却が完了したボートを取り出す工程と、ボートから半導体部材を搬出する工程と、このボートに未処理の半導体部材を搬入する工程を備えたことを特徴とする。   According to a first aspect of the present invention, there is provided a semiconductor heat treatment method comprising: a step of transferring an empty cooling cylinder below a furnace port in a load lock chamber communicating with the lower part of the heat treatment furnace; The step of storing the boat in the empty cooling cylinder, the step of retracting the cooling cylinder storing the boat loaded with the heat-treated semiconductor member from the bottom of the furnace port in the load lock chamber, and the untreated semiconductor member are mounted. The step of transferring another boat to the lower part of the furnace port in the load lock chamber, the step of transferring this boat into the heat treatment furnace and performing the heat treatment, and taking out the boat that has been cooled after the heat treatment from the cooling tube that has been saved. The method includes a step, a step of carrying out a semiconductor member from the boat, and a step of carrying in an untreated semiconductor member into the boat.

なお、冷却筒は、内部の半導体部材やボートの熱を外部のロードロック室内にほとんど放出することなく、この半導体部材の冷却を迅速に行うものである（他の請求項においても同じ）。従って、この冷却筒には、液体や気体の冷媒をロードロック室の外部から循環させて内部を直接的に及び／又は間接的に強制冷却するような冷却手段を設ける必要がある。また、この冷却手段は、外部から電力を供給してペルチェ効果により冷却筒の内部を冷却するようにしたものであってもよい。また、「未処理の半導体部材」とは、熱処理炉で熱処理を行うべき半導体部材のことをいう（他の請求項においても同じ）。さらに、請求項１において、冷却筒からボートを取り出す工程とこのボートの半導体部材を搬出入する工程は、任意のタイミングで実行することができる。   Note that the cooling cylinder quickly cools the semiconductor member without releasing the heat of the internal semiconductor member or boat into the external load lock chamber (the same applies to other claims). Therefore, it is necessary to provide the cooling cylinder with a cooling means that circulates a liquid or gaseous refrigerant from the outside of the load lock chamber to forcibly cool the inside directly and / or indirectly. The cooling means may be one that supplies power from outside and cools the inside of the cooling cylinder by the Peltier effect. The “unprocessed semiconductor member” refers to a semiconductor member to be heat-treated in a heat treatment furnace (the same applies to other claims). Furthermore, in claim 1, the step of taking out the boat from the cooling cylinder and the step of carrying in / out the semiconductor member of the boat can be executed at an arbitrary timing.

請求項２の半導体熱処理方法は、熱処理炉の下方に炉口を通じて連通するロードロック室内で、空の冷却筒を炉口下方に移送する工程と、熱処理済みの半導体部材を搭載した熱処理炉内のボートをこの空の冷却筒に収納する工程と、この熱処理済みの半導体部材を搭載したボートを収納した冷却筒をロードロック室内で炉口下方から待避させる工程と、未処理の半導体部材を搭載したボートを収納した別の冷却筒をロードロック室内で炉口下方に移送する工程と、この炉口下方に移送した冷却筒のボートを熱処理炉内に移送して熱処理を行う工程と、待避していた冷却筒に収納されたボートから熱処理後の冷却が完了した半導体部材を搬出する工程と、この冷却筒に収納されたボートに未処理の半導体部材を搬入する工程を備えたことを特徴とする。   According to a second aspect of the present invention, there is provided a semiconductor heat treatment method comprising: a step of transferring an empty cooling cylinder below a furnace port in a load lock chamber communicating with the lower part of the heat treatment furnace; The step of storing the boat in the empty cooling cylinder, the step of retracting the cooling cylinder storing the boat loaded with the heat-treated semiconductor member from the bottom of the furnace port in the load lock chamber, and the untreated semiconductor member are mounted. A process of transferring another cooling cylinder containing a boat to the lower part of the furnace port in the load lock chamber, a process of transferring the boat of the cooling cylinder transferred to the lower part of the furnace port to the heat treatment furnace, and performing a heat treatment are saved. A step of unloading the semiconductor member that has been cooled after the heat treatment from the boat accommodated in the cooling cylinder, and a step of unloading the semiconductor member to the boat accommodated in the cooling cylinder. To.

請求項３の半導体熱処理方法は、内部を外部から気密状態にして不活性雰囲気とした空の冷却筒を熱処理炉の炉口下方に移送してこの炉口に気密に接続する工程と、熱処理済みの半導体部材を搭載した熱処理炉内のボートをこの空の冷却筒に収納する工程と、この熱処理済みの半導体部材を搭載したボートを収納した冷却筒の内部を外部から気密状態にして、この冷却筒を熱処理炉の炉口下方から待避させる工程と、未処理の半導体部材を搭載したボートを収納し、内部を外部から気密状態にして不活性雰囲気とした別の冷却筒を熱処理炉の炉口下方に移送してこの炉口に気密に接続する工程と、この別の冷却筒に収納されたボートを熱処理炉内に移送して熱処理を行う工程と、待避していた冷却筒に収納されたボートから半導体部材を搬出する工程と、この冷却筒に収納されたボートに未処理の半導体部材を搬入する工程を備えたことを特徴とする。   According to a third aspect of the present invention, there is provided a semiconductor heat treatment method in which an empty cooling cylinder made in an inert atmosphere with the inside being airtight from the outside is transferred below the furnace port of the heat treatment furnace and airtightly connected to the furnace port; The step of storing the boat in the heat treatment furnace loaded with the semiconductor member in the empty cooling cylinder, and the inside of the cooling cylinder accommodating the boat loaded with the semiconductor member subjected to the heat treatment are made airtight from the outside, and this cooling is performed. The process of retracting the cylinder from the bottom of the furnace port of the heat treatment furnace, and another cooling cylinder that houses a boat loaded with unprocessed semiconductor members and is made in an airtight state from the outside to create an inert atmosphere. The process of transporting downward and connecting to the furnace port in an airtight manner, the process of transporting the boat housed in the separate cooling cylinder into the heat treatment furnace and performing the heat treatment, and the process of storing the cooling cylinder Unload semiconductor components from boat And that step, characterized by comprising the step of loading the semiconductor member unprocessed boat this is housed in the cooling cylinder.

なお、「不活性雰囲気」とは、減圧したり不活性ガスの充填や流通を行った雰囲気を意味する。従って、請求項３における冷却筒は、単に内部の半導体部材やボートの熱を外部にほとんど放出することなく、この半導体部材の冷却を迅速に行うだけでなく、ロードロック室の機能も併せ持つことになる（請求項６においても同じ）。   The “inert atmosphere” means an atmosphere in which pressure is reduced or an inert gas is filled or distributed. Therefore, the cooling cylinder according to claim 3 not only releases the heat of the semiconductor member and boat inside but also quickly cools the semiconductor member and also has a function of a load lock chamber. (The same applies to claim 6).

請求項４の半導体熱処理装置は、ボートに搭載された半導体部材の熱処理を行う１以上の熱処理炉と、この１以上の熱処理炉の下方に炉口を通じて連通するロードロック室とを備えた半導体熱処理装置において、熱処理炉の個数を超える数のボートが配置されると共に、ロードロック室内に、１個のボートに搭載された半導体部材の冷却を行う１以上の冷却筒が配置され、冷却筒をロードロック室内で移送することができる第１冷却筒移送装置と、半導体部材を搭載したボートを炉口下方に移送するボート炉口移送装置と、半導体部材を搭載したボートを熱処理炉内に移送するとともに、この熱処理炉内から半導体部材を搭載したボートを炉口下方に配置された冷却筒内に移送する第１ボート移送装置と、冷却筒から半導体部材を搭載したボートを取り出すボート取出装置とを備えたことを特徴とする。   According to another aspect of the present invention, there is provided a semiconductor heat treatment apparatus comprising: one or more heat treatment furnaces for heat treatment of semiconductor members mounted on a boat; and a load lock chamber communicating with the lower part of the one or more heat treatment furnaces through a furnace port. In the apparatus, the number of boats exceeding the number of heat treatment furnaces is arranged, and one or more cooling cylinders for cooling the semiconductor members mounted on one boat are arranged in the load lock chamber, and the cooling cylinders are loaded. A first cooling cylinder transfer device that can be transferred in the lock chamber, a boat furnace port transfer device that transfers a boat loaded with semiconductor members to the lower portion of the furnace port, and a boat loaded with semiconductor members are transferred into the heat treatment furnace. A first boat transfer device for transferring a boat loaded with a semiconductor member from the inside of the heat treatment furnace into a cooling cylinder disposed below the furnace port, and a boat loaded with the semiconductor member from the cooling cylinder. Characterized in that a boat take-out apparatus for taking out the bets.

請求項５の半導体熱処理装置は、ボートに搭載された半導体部材の熱処理を行う１以上の熱処理炉と、この１以上の熱処理炉の下方に炉口を通じて連通するロードロック室とを備えた半導体熱処理装置において、熱処理炉の個数を超える数のボートが配置されると共に、ロードロック室内に、１個のボートに搭載された半導体部材の冷却を行う冷却筒がこのボートの数と同数配置され、冷却筒をロードロック室内で移送することができる第２冷却筒移送装置と、炉口下方に配置された冷却筒内から半導体部材を搭載したボートを熱処理炉内に移送すると共に、この熱処理炉内から半導体部材を搭載したボートを炉口下方に配置された冷却筒内に移送する第２ボート移送装置とを備えたことを特徴とする。   A semiconductor heat treatment apparatus according to claim 5 includes one or more heat treatment furnaces for heat treatment of semiconductor members mounted on a boat, and a load lock chamber communicating with the lower part of the one or more heat treatment furnaces through a furnace port. In the apparatus, the number of boats exceeding the number of heat treatment furnaces is arranged, and cooling cylinders for cooling semiconductor members mounted on one boat are arranged in the load lock chamber in the same number as the number of boats. The second cooling cylinder transfer device capable of transferring the cylinder in the load lock chamber, and the boat carrying the semiconductor member from the cooling cylinder disposed below the furnace port are transferred into the heat treatment furnace, and from within the heat treatment furnace. And a second boat transfer device for transferring a boat carrying a semiconductor member into a cooling cylinder arranged below the furnace port.

請求項６の半導体熱処理装置は、ボートに搭載された半導体部材の熱処理を行い下方に炉口を有する１以上の熱処理炉を備えた半導体熱処理装置において、熱処理炉の個数を超える数のボートと、内部を外部から気密状態にして不活性雰囲気とすることができ、１個のボートに搭載された半導体部材の冷却を行う、このボートの数と同数の冷却筒と、冷却筒を移送することができる第３冷却筒移送装置と、冷却筒の内部を外部から気密状態にする冷却筒気密装置と、炉口下方に配置された冷却筒をこの炉口に気密に接続する冷却筒接続装置と、炉口に気密に接続された冷却筒内から半導体部材を搭載したボートを熱処理炉内に移送すると共に、この熱処理炉内から半導体部材を搭載したボートを炉口に気密に接続された冷却筒内に移送する第３ボート移送装置とを備えたことを特徴とする。   The semiconductor heat treatment apparatus according to claim 6 is a semiconductor heat treatment apparatus including one or more heat treatment furnaces for performing heat treatment of a semiconductor member mounted on a boat and having a furnace port below, the number of boats exceeding the number of heat treatment furnaces; The inside can be made airtight from the outside to create an inert atmosphere, and the number of cooling cylinders and the number of cooling cylinders can be transferred to cool the semiconductor members mounted on one boat. A third cooling cylinder transfer device capable of cooling, a cooling cylinder hermetic device for bringing the inside of the cooling cylinder into an airtight state from the outside, a cooling cylinder connecting device for airtightly connecting the cooling cylinder disposed below the furnace port to the furnace port, A boat loaded with semiconductor members is transferred into a heat treatment furnace from a cooling cylinder that is airtightly connected to the furnace port, and a boat loaded with semiconductor members is transferred from the heat treatment furnace to the furnace port in an airtight manner. To transfer to the second Characterized in that a boat transfer device.

請求項１の発明によれば、熱処理済みの半導体部材をボートと共に冷却筒に収納し、熱処理炉の炉口下方から待避させて冷却するので、この冷却の間に、未処理の半導体部材を搭載したボートを炉口下方から熱処理炉内に移送することができる。従って、前の半導体部材の冷却と次の半導体部材の熱処理を並行して行うことにより、作業全体のスループットを向上させることができるようになる。しかも、熱処理済みの半導体部材のボートは、ロードロック室内の冷却筒に収納されるので、同じロードロック室内に未処理の半導体部材が存在しても、熱による悪影響を与えるようなことも生じない。   According to the first aspect of the present invention, the heat-treated semiconductor member is housed in the cooling cylinder together with the boat, and is retracted from the bottom of the furnace port of the heat treatment furnace to be cooled, so that the untreated semiconductor member is mounted during this cooling. The boat thus obtained can be transferred into the heat treatment furnace from below the furnace port. Therefore, the throughput of the entire operation can be improved by performing the cooling of the previous semiconductor member and the heat treatment of the next semiconductor member in parallel. In addition, since the heat-treated semiconductor member boat is housed in the cooling cylinder in the load lock chamber, even if there is an untreated semiconductor member in the same load lock chamber, there is no adverse effect due to heat. .

請求項２の発明によれば、熱処理済みの半導体部材をボートと共に冷却筒に収納し、熱処理炉の炉口下方から待避させて冷却するので、この冷却の間に、別の冷却筒を炉口下方に移送して、未処理の半導体部材を搭載したボートをこの炉口下方の別の冷却筒から熱処理炉内に移送することができる。従って、前の半導体部材の冷却と次の半導体部材の熱処理を並行して行うことにより、作業全体のスループットを向上させることができるようになる。しかも、熱処理済みの半導体部材のボートと未処理の半導体部材のボートは、ロードロック室内の異なる冷却筒にそれぞれ収納されるので、この熱処理済みの半導体部材が未処理の半導体部材に熱による悪影響を与えるようなことも生じない。   According to the second aspect of the present invention, the heat-treated semiconductor member is housed in the cooling cylinder together with the boat, and is cooled by being retracted from below the furnace opening of the heat treatment furnace. It is possible to transfer the boat loaded with unprocessed semiconductor members downward from another cooling cylinder below the furnace port into the heat treatment furnace. Therefore, the throughput of the entire operation can be improved by performing the cooling of the previous semiconductor member and the heat treatment of the next semiconductor member in parallel. Moreover, since the heat-treated semiconductor member boat and the untreated semiconductor member boat are respectively housed in different cooling cylinders in the load lock chamber, the heat-treated semiconductor member has an adverse effect on the untreated semiconductor member due to heat. There is no such thing as giving.

請求項３の発明によれば、熱処理済みの半導体部材をボートと共に冷却筒に収納し、熱処理炉の炉口下方から待避させて冷却するので、この冷却の間に、別の冷却筒を炉口下方に移送して、内部の未処理の半導体部材を搭載したボートを熱処理炉内に移送することができる。従って、前の半導体部材の冷却と次の半導体部材の熱処理を並行して行うことにより、作業全体のスループットを向上させることができるようになる。しかも、熱処理済みの半導体部材のボートは、内部を外部から気密状態にして不活性雰囲気とした冷却筒に収納されるので、それ自身がロードロック機能を有する冷却筒中で冷却することができ、同様の冷却筒に収納された未処理の半導体部材に熱による悪影響を与えるようなことも生じない。   According to the third aspect of the present invention, the heat-treated semiconductor member is housed in the cooling cylinder together with the boat, and is cooled by being retracted from the lower part of the furnace opening of the heat treatment furnace. It is possible to transfer the boat in which the unprocessed semiconductor member inside is loaded into the heat treatment furnace. Therefore, the throughput of the entire operation can be improved by performing the cooling of the previous semiconductor member and the heat treatment of the next semiconductor member in parallel. Moreover, the heat-treated semiconductor member boat is housed in a cooling cylinder that is airtight from the outside and made in an inert atmosphere, so that it can be cooled in a cooling cylinder that itself has a load lock function. The unprocessed semiconductor member accommodated in the cooling cylinder is not adversely affected by heat.

請求項４の発明によれば、第１ボート移送装置により熱処理済みの半導体部材をボートと共に冷却筒に収納し、第１冷却筒移送装置によりこの冷却筒を熱処理炉の炉口下方から待避させて冷却することができるので、この冷却の間に、ボート炉口移送装置と第１ボート移送装置によって未処理の半導体部材を搭載したボートを熱処理炉内に移送することができる。従って、前の半導体部材の冷却と次の半導体部材の熱処理を並行して行うことにより、作業全体のスループットを向上させることができるようになる。しかも、熱処理済みの半導体部材のボートは、ロードロック室内の冷却筒に収納されるので、同じロードロック室内に未処理の半導体部材が存在しても、熱による悪影響を与えるようなことも生じない。   According to invention of Claim 4, the semiconductor member heat-processed with the 1st boat transfer apparatus is accommodated in a cooling cylinder with a boat, and this cooling cylinder is retracted from the furnace port lower part of a heat treatment furnace with a 1st cooling cylinder transfer apparatus. Since it can cool, during this cooling, the boat carrying an untreated semiconductor member can be transferred into the heat treatment furnace by the boat furnace port transfer device and the first boat transfer device. Therefore, the throughput of the entire operation can be improved by performing the cooling of the previous semiconductor member and the heat treatment of the next semiconductor member in parallel. In addition, since the heat-treated semiconductor member boat is housed in the cooling cylinder in the load lock chamber, even if there is an untreated semiconductor member in the same load lock chamber, there is no adverse effect due to heat. .

請求項５の発明によれば、第２ボート移送装置により熱処理済みの半導体部材をボートと共に冷却筒に収納し、第２冷却筒移送装置によりこの冷却筒を熱処理炉の炉口下方から待避させて冷却するので、この冷却の間に、第２冷却筒移送装置により別の冷却筒を炉口下方に移送して、第２ボート移送装置により未処理の半導体部材を搭載したボートをこの炉口下方の別の冷却筒から熱処理炉内に移送することができる。従って、前の半導体部材の冷却と次の半導体部材の熱処理を並行して行うことにより、作業全体のスループットを向上させることができるようになる。しかも、熱処理済みの半導体部材のボートと未処理の半導体部材のボートは、ロードロック室内の異なる冷却筒にそれぞれ収納されるので、この熱処理済みの半導体部材が未処理の半導体部材に熱による悪影響を与えるようなことも生じない。   According to invention of Claim 5, the semiconductor member heat-processed with the 2nd boat transfer apparatus is accommodated in a cooling cylinder with a boat, and this cooling cylinder is retracted from the furnace port lower part of a heat treatment furnace with a 2nd cooling cylinder transfer apparatus. During cooling, another cooling cylinder is transferred to the lower part of the furnace port by the second cooling cylinder transfer device, and the boat loaded with the unprocessed semiconductor member is moved to the lower part of the furnace port by the second boat transfer apparatus. It can be transferred from another cooling cylinder into the heat treatment furnace. Therefore, the throughput of the entire operation can be improved by performing the cooling of the previous semiconductor member and the heat treatment of the next semiconductor member in parallel. Moreover, since the heat-treated semiconductor member boat and the untreated semiconductor member boat are respectively housed in different cooling cylinders in the load lock chamber, the heat-treated semiconductor member has an adverse effect on the untreated semiconductor member due to heat. There is no such thing as giving.

請求項６の発明によれば、第３ボート移送装置により熱処理済みの半導体部材をボートと共に冷却筒に収納し、第３冷却筒移送装置により熱処理炉の炉口下方から待避させて冷却するので、この冷却の間に、第３冷却筒移送装置により別の冷却筒を炉口下方に移送して、第３ボート移送装置によりこの冷却筒の内部の未処理の半導体部材を搭載したボートを熱処理炉内に移送することができる。従って、前の半導体部材の冷却と次の半導体部材の熱処理を並行して行うことにより、作業全体のスループットを向上させることができるようになる。しかも、熱処理済みの半導体部材のボートは、内部を外部から気密状態にして不活性雰囲気とした冷却筒に収納されるので、それ自身がロードロック機能を有する冷却筒中で冷却することができ、同様の冷却筒に収納された未処理の半導体部材に熱による悪影響を与えるようなことも生じない。   According to the invention of claim 6, the semiconductor member that has been heat-treated by the third boat transfer device is housed in the cooling cylinder together with the boat, and is cooled by being retracted from the bottom of the furnace port of the heat treatment furnace by the third cooling tube transfer device. During this cooling, another cooling cylinder is transferred to the lower part of the furnace port by the third cooling cylinder transfer device, and the boat on which the unprocessed semiconductor member inside the cooling cylinder is mounted by the third boat transfer apparatus is a heat treatment furnace. Can be transported in. Therefore, the throughput of the entire operation can be improved by performing the cooling of the previous semiconductor member and the heat treatment of the next semiconductor member in parallel. Moreover, the heat-treated semiconductor member boat is housed in a cooling cylinder that is airtight from the outside and made in an inert atmosphere, so that it can be cooled in a cooling cylinder that itself has a load lock function. The unprocessed semiconductor member accommodated in the cooling cylinder is not adversely affected by heat.

本発明の一実施形態を示すものであって、半導体熱処理装置の構造を示すと共に冷却筒とボートの動作により半導体熱処理方法を示す縦断面図である。BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a longitudinal sectional view illustrating a structure of a semiconductor heat treatment apparatus and illustrating a semiconductor heat treatment method by operation of a cooling cylinder and a boat according to an embodiment of the present invention. 本発明の一実施形態を示すものであって、ロードロック室を移送する冷却筒とボートの動作を示す平面図である。FIG. 3 is a plan view showing an embodiment of the present invention, and shows the operation of a cooling cylinder and a boat that transfer a load lock chamber. 本発明の一実施形態を示すものであって、ロードロック室内に冷却筒を３個配置した場合の平面図である。1 is a plan view illustrating a case where three cooling cylinders are arranged in a load lock chamber according to an embodiment of the present invention. 本発明の一実施形態を示すものであって、熱処理炉を２つ設け冷却筒を４個配置した場合の平面図である。1 shows an embodiment of the present invention, and is a plan view when two heat treatment furnaces are provided and four cooling cylinders are arranged. FIG. 本発明の一実施形態を示すものであって、熱処理炉を２つ設け冷却筒を６個配置した場合の平面図である。1 shows an embodiment of the present invention, and is a plan view when two heat treatment furnaces are provided and six cooling tubes are arranged. FIG.

符号の説明Explanation of symbols

１ 熱処理炉
１ａ 炉口
１ｂ プロセスチューブ
２ ロードロック室
３ ボート
４ エレベータ載置部
５ 冷却筒
５ａ 上扉1 Heat Treatment Furnace 1a Furnace 1b Process Tube 2 Load Lock Chamber 3 Boat 4 Elevator Placement 5 Cooling Tube 5a Upper Door

以下、本発明の最良の実施形態について図１〜図５を参照して説明する。   Hereinafter, the best embodiment of the present invention will be described with reference to FIGS.

まず、最も単純な構成をとる実施形態として、半導体ウエハをボートに搭載して熱処理を行う半導体熱処理方法（請求項１に対応）及び半導体熱処理装置（請求項４に対応）について説明する。   First, as an embodiment having the simplest configuration, a semiconductor heat treatment method (corresponding to claim 1) and a semiconductor heat treatment apparatus (corresponding to claim 4) for performing heat treatment by mounting a semiconductor wafer on a boat will be described.

この半導体熱処理装置は、図１に示すように、熱処理炉１とこの熱処理炉１の下端の炉口１ａの下方に設けられたロードロック室２とを有する。熱処理炉１は、多数枚の半導体ウエハを搭載したボート３を石英ガラス製のプロセスチューブ１ｂ内に収納して、適宜の雰囲気中において所要の温度プロファイルで加熱することにより熱処理を行うものである。従って、この熱処理炉１は、プロセスチューブ１ｂの外側若しくは内側に配置された熱源により、又は、このプロセスチューブ１ｂ自体が熱源となって、ボート３に搭載された半導体ウエハを所要の温度−時間条件に従い加熱すると共に、プロセスチューブ１ｂの内部を密閉して図示しないガスの吸排気口により内部の雰囲気を制御することができるようになっている。   As shown in FIG. 1, the semiconductor heat treatment apparatus includes a heat treatment furnace 1 and a load lock chamber 2 provided below a furnace port 1 a at the lower end of the heat treatment furnace 1. The heat treatment furnace 1 performs heat treatment by storing a boat 3 loaded with a large number of semiconductor wafers in a process tube 1b made of quartz glass and heating it in a suitable atmosphere with a required temperature profile. Therefore, the heat treatment furnace 1 uses the heat source disposed outside or inside the process tube 1b or the process tube 1b itself as a heat source to convert the semiconductor wafers mounted on the boat 3 to the required temperature-time conditions. The process tube 1b is hermetically sealed and the internal atmosphere can be controlled by a gas intake / exhaust port (not shown).

ロードロック室２は、内部を外部から気密状態にして、図示しないガスの吸排気口により不活性雰囲気とすることができるようにした部屋である。不活性雰囲気とは、ロードロック室２内を減圧してほぼ真空状態としたり、不活性ガス（窒素ガスやアルゴンガス等）の充填や流通を行った雰囲気であり、これによってロードロック室２内で半導体ウエハに自然酸化膜が形成されるのを防止することができるようにしている。   The load lock chamber 2 is a chamber in which the inside is hermetically sealed from the outside so that an inert atmosphere can be created by a gas intake / exhaust port (not shown). The inert atmosphere is an atmosphere in which the inside of the load lock chamber 2 is depressurized to be almost in a vacuum state or filled and circulated with an inert gas (nitrogen gas, argon gas, etc.). Thus, it is possible to prevent the natural oxide film from being formed on the semiconductor wafer.

また、ロードロック室２の内部は、炉口１ａを通じて熱処理炉１に連通するようになっている。もっとも、本実施形態では、この炉口１ａに開閉扉が設けてあり、この開閉扉によって熱処理炉１内とロードロック室２内の空間を仕切ることができるようになっている。ただし、この炉口１ａは、ボート３を熱処理炉１内に移送したときに、このボート３の支持体によって塞ぐこともできるので、このような開閉扉は必ずしも設ける必要はない。さらに、このロードロック室２の内部は、ボート３に搭載する半導体ウエハを積み替えるために、図示しない開閉扉により外部とも通じるようになっている。   The interior of the load lock chamber 2 communicates with the heat treatment furnace 1 through the furnace port 1a. However, in the present embodiment, an opening / closing door is provided at the furnace port 1a, and the space in the heat treatment furnace 1 and the load lock chamber 2 can be partitioned by the opening / closing door. However, since the furnace port 1a can be closed by the support body of the boat 3 when the boat 3 is transferred into the heat treatment furnace 1, such an opening / closing door is not necessarily provided. Further, the inside of the load lock chamber 2 is communicated with the outside by an opening / closing door (not shown) in order to reload the semiconductor wafers mounted on the boat 3.

前記熱処理炉１とロードロック室２の内部には、２個のボート３が配置されている。ボート３は、多数の半導体ウエハを上下に間隔をあけて搭載できるようになされた搬送体であり、エレベータ載置部４に載置されて炉口１ａを介し熱処理炉１内とロードロック室２内との間を上下に移送されると共に、図示しないリフタによってロードロック室２内で水平移送できるようになっている。   Two boats 3 are arranged inside the heat treatment furnace 1 and the load lock chamber 2. The boat 3 is a transfer body that can mount a large number of semiconductor wafers at intervals in the vertical direction. The boat 3 is mounted on the elevator mounting unit 4 and the heat treatment furnace 1 and the load lock chamber 2 through the furnace port 1a. While being transported up and down between the interior and the interior, it can be horizontally transported within the load lock chamber 2 by a lifter (not shown).

また、ロードロック室２内には、１個の冷却筒５が配置されている。冷却筒５は、ボート３を収納して周囲を囲む収納体であり、上面を開閉する上扉５ａが設けられると共に、下面にも下扉が設けられ、周側面にも図示しない開閉扉が設けられている。ただし、冷却筒５の下扉は、収納したボート３の支持体によって塞ぐこともできるので、必ずしも設ける必要はない。そして、底面は、ボート３の下端を載置支持できると共に、エレベータ載置部４が貫通してこのボート３を上下動させることができるような開口部が形成されている。   A single cooling cylinder 5 is disposed in the load lock chamber 2. The cooling cylinder 5 is a housing body that houses the boat 3 and surrounds the periphery, and is provided with an upper door 5a that opens and closes the upper surface, a lower door that is provided on the lower surface, and an opening and closing door that is not shown on the peripheral side surface. It has been. However, the lower door of the cooling cylinder 5 can be closed with the support body of the housed boat 3 and therefore does not necessarily have to be provided. The bottom surface is provided with an opening that can place and support the lower end of the boat 3 and that allows the elevator placement portion 4 to pass through and move the boat 3 up and down.

この冷却筒５は、少なくとも周側面を含む各面が水冷ジャケット構造とされると共に、好ましくは内部に冷却ガスを流通させる図示しない吸排気口が設けられていて、これら両者の作用により内部に収納したボート３の半導体ウエハを迅速に冷却できる。また、この冷却筒５は、内部が水冷ジャケットによって囲まれているので、半導体ウエハやボート３の余熱を外部にほとんど漏らすことはないが、場合により断熱層を付加して水冷ジャケットの外面と外部との断熱を図るようにしてもよい。この冷却筒５は、図示しないリフタによってロードロック室２内で水平移送や回転を行ったり熱処理炉１の下方で上下動できるようになっている。   The cooling cylinder 5 has a water-cooled jacket structure on at least each surface including a peripheral side surface, and preferably has an intake / exhaust port (not shown) through which a cooling gas is circulated. The semiconductor wafer in the boat 3 can be quickly cooled. In addition, since the cooling cylinder 5 is surrounded by a water cooling jacket, the residual heat of the semiconductor wafer and the boat 3 is hardly leaked to the outside. You may make it aim at heat insulation. The cooling cylinder 5 can be horizontally transferred and rotated in the load lock chamber 2 by a lifter (not shown) or can be moved up and down below the heat treatment furnace 1.

前記半導体熱処理装置は、図１（ａ）に示すように、熱処理炉１のプロセスチューブ１ｂ内のボート３に搭載された半導体ウエハの熱処理を行う。この際、ロードロック室２内の炉口１ａの下方には空の冷却筒５が待機し、この冷却筒５の奥側（図示右側）には、未処理の半導体ウエハを搭載したボート３が待機している。未処理の半導体ウエハとは、熱処理炉１での今回の熱処理が未処理であるもののことであり、半導体製造プロセスにおいて、別工程での熱処理を含め、他の処理は行われていてもよい。熱処理炉１内のボート３の半導体ウエハの熱処理が終わると、図１（ｂ）に示すように、冷却筒５が炉口１ａまで上昇して上扉５ａが開くと共に、炉口１ａの開閉扉も開く。   As shown in FIG. 1A, the semiconductor heat treatment apparatus heats a semiconductor wafer mounted on a boat 3 in a process tube 1b of a heat treatment furnace 1. At this time, an empty cooling cylinder 5 stands by below the furnace port 1 a in the load lock chamber 2, and on the back side (right side in the figure) of this cooling cylinder 5 is a boat 3 on which unprocessed semiconductor wafers are mounted. Waiting. An unprocessed semiconductor wafer is one in which the current heat treatment in the heat treatment furnace 1 is unprocessed, and other processes including a heat treatment in another process may be performed in the semiconductor manufacturing process. When the heat treatment of the semiconductor wafers in the boat 3 in the heat treatment furnace 1 is finished, as shown in FIG. 1B, the cooling cylinder 5 rises to the furnace port 1a and the upper door 5a is opened, and the open / close door of the furnace port 1a is opened. Also open.

また、エレベータ載置部４は、この冷却筒５内を上昇して熱処理炉１内のボート３を載置し、下降してこのボート３を冷却筒５内に下ろし底面によって支持させる。そして、図１（ｃ）に示すように、冷却筒５が下降して元の待機位置に戻ると共に、この冷却筒５の上扉５ａと下扉が閉じる。なお、図２（ａ）〜図２（ｃ）は、この図１（ａ）〜図１（ｃ）に示した動作を平面図で示したものである。   Further, the elevator placing portion 4 ascends in the cooling cylinder 5 to place the boat 3 in the heat treatment furnace 1 and descends to lower the boat 3 in the cooling cylinder 5 and support it by the bottom surface. Then, as shown in FIG. 1C, the cooling cylinder 5 descends and returns to the original standby position, and the upper door 5a and the lower door of the cooling cylinder 5 are closed. 2A to 2C show the operations shown in FIGS. 1A to 1C in plan views.

このようにして熱処理済みの半導体ウエハを搭載したボート３が冷却筒５に収納されると、図１（ｄ）に示すように、この冷却筒５が奥側に待避すると共に、奥側にあった未処理の半導体ウエハを搭載したボート３が炉口１ａの下方に移送され、エレベータ載置部４の上に載置される。この移送は、例えば図２（ｄ）に示すように、冷却筒５が矢印Ｍ１に沿ってコの字形状に移送されると共に、未処理の半導体ウエハのボート３が矢印Ｍ２に沿って真っ直ぐに冷却筒５のあった位置に移送されることにより行うことができる。When the boat 3 on which the heat-treated semiconductor wafers are mounted in this manner is stored in the cooling cylinder 5, as shown in FIG. The boat 3 loaded with unprocessed semiconductor wafers is transferred below the furnace port 1a and placed on the elevator placement section 4. This transfer, for example, as shown in FIG. 2 (d), the cooling cylinder 5 is transferred to the U-shaped along the arrow M 1, boat 3 unprocessed semiconductor wafer along the arrow M 2 It can be carried out by being transferred straight to the position where the cooling cylinder 5 was.

この際、熱処理済みの半導体ウエハを搭載したボート３と未処理の半導体ウエハを搭載したボート３とが同じロードロック室２内に同時に存在することになるが、熱処理済みの半導体ウエハのボート３は冷却筒５内に収納されているので、熱処理の余熱が冷却筒５の外部に漏れることはほとんどなく、隣のボート３の未処理の半導体ウエハに悪影響を与えるようなおそれは生じない。しかも、この冷却筒５は、ロードロック室２内の奥側に待避することにより炉口１ａの下方をあけるので、ここに未処理の半導体ウエハを搭載したボート３を移送することができるようになる。そして、ロードロック室２の奥側に移送された冷却筒５は、水冷ジャケットによる水冷と冷却ガスの流通による冷却により、内部に収納したボート３の半導体ウエハを冷却する。   At this time, the boat 3 loaded with heat-treated semiconductor wafers and the boat 3 loaded with untreated semiconductor wafers are simultaneously present in the same load lock chamber 2. Since it is housed in the cooling cylinder 5, the residual heat of the heat treatment hardly leaks outside the cooling cylinder 5, and there is no possibility of adversely affecting unprocessed semiconductor wafers in the adjacent boat 3. Moreover, since the cooling cylinder 5 is retracted behind the load lock chamber 2 to open the lower part of the furnace port 1a, the boat 3 loaded with unprocessed semiconductor wafers can be transferred here. Become. The cooling cylinder 5 transferred to the back side of the load lock chamber 2 cools the semiconductor wafer of the boat 3 housed therein by water cooling by a water cooling jacket and cooling by circulation of a cooling gas.

また、炉口１ａの下方に移送していた未処理の半導体ウエハのボート３は、図１（ｅ）に示すように、エレベータ載置部４の上昇により熱処理炉１内に移送される。
また、このボート３の移送の直前には、図１（ｄ）に示すように、炉口１ａの開閉扉が開き、このボート３の移送の直後には、図１（ｅ）に示すように、炉口１ａの開閉扉が閉じる。そして、熱処理炉１が熱処理を開始して、このボート３の半導体ウエハの熱処理が行われる。従って、この熱処理炉１は、前の半導体ウエハの熱処理を終えた後に冷却を行うことなく、次の半導体ウエハの熱処理を開始することができるので、炉内を一旦所定の取出し可能温度まで冷却した後に加熱するというような余分な蓄熱エネルギーのロスがなくなる。Further, the unprocessed semiconductor wafer boat 3 that has been transferred to the lower side of the furnace port 1a is transferred into the heat treatment furnace 1 by the lift of the elevator mounting portion 4 as shown in FIG.
Further, immediately before the transfer of the boat 3, as shown in FIG. 1 (d), the open / close door of the furnace port 1a is opened, and immediately after the transfer of the boat 3, as shown in FIG. 1 (e). The door of the furnace port 1a is closed. Then, the heat treatment furnace 1 starts heat treatment, and heat treatment of the semiconductor wafers in the boat 3 is performed. Therefore, since the heat treatment furnace 1 can start the heat treatment of the next semiconductor wafer without cooling after the heat treatment of the previous semiconductor wafer, the inside of the furnace is once cooled to a predetermined take-out temperature. Loss of extra heat storage energy such as heating later is eliminated.

しかも、この半導体熱処理装置は、ロードロック室２の奥側に移送した冷却筒５により、前に熱処理を終えた半導体ウエハの冷却を行うと共に、次の未処理の半導体ウエハの熱処理を並行して行うことができる。なお、エレベータ載置部４は、後の冷却筒５の移送に備えて一旦下降して元の位置に戻る。また、図２（ｅ）は、この図１（ｅ）の状態を平面図で示したものである。   In addition, the semiconductor heat treatment apparatus cools the semiconductor wafer that has been previously heat treated by the cooling cylinder 5 transferred to the back side of the load lock chamber 2 and concurrently performs the heat treatment of the next untreated semiconductor wafer. It can be carried out. In addition, the elevator placing portion 4 is temporarily lowered and returned to the original position in preparation for the subsequent transfer of the cooling cylinder 5. FIG. 2E shows the state of FIG. 1E in a plan view.

本実施形態（以下、「基本実施形態」という）では、熱処理炉１による熱処理の方が冷却筒５による冷却よりも長い時間を要する場合について説明する。このため、熱処理炉１内のボート３の半導体ウエハが熱処理を行われている間に、冷却筒５内に収納されたボート３の半導体ウエハの冷却が完了する。このようにして冷却が完了すると、図１（ｆ）に示すように、そのとき内部にあったボート３の位置はそのままに、冷却筒５だけを炉口１ａの下方の位置に移送する。この際、冷却筒５は、周側面の開閉扉を開けて、ボート３だけを残して図２（ｆ）の矢印Ｍ３に示すように移送することにより、このボート３を取り出すことができる。In the present embodiment (hereinafter referred to as “basic embodiment”), a case will be described in which the heat treatment in the heat treatment furnace 1 takes longer than the cooling in the cooling cylinder 5. Therefore, cooling of the semiconductor wafers in the boat 3 accommodated in the cooling cylinder 5 is completed while the semiconductor wafers in the boat 3 in the heat treatment furnace 1 are being heat-treated. When the cooling is completed in this way, as shown in FIG. 1 (f), the position of the boat 3 which was inside at that time is kept as it is, and only the cooling cylinder 5 is transferred to a position below the furnace port 1a. At this time, cooling cylinder 5, it opens the door of the peripheral side surface, by transferring leaving only boat 3 as indicated by an arrow M 3 in FIG. 2 (f), the can be taken out this boat 3.

このようにしてボート３が取り出されると、ロードロック室２の開閉扉を開けて、図１（ｆ）の矢印に示すように、このボート３に搭載された熱処理済みの半導体ウエハを外部に搬出すると共に、外部から未処理の半導体ウエハをボート３に搬入して搭載させる。この半導体ウエハの搬出と搬入は、通常は図示しない工業用ロボットによって１枚ずつ又は複数枚ずつ一括して行われる。   When the boat 3 is taken out in this way, the door of the load lock chamber 2 is opened, and the heat-treated semiconductor wafer mounted on the boat 3 is carried out to the outside as shown by the arrow in FIG. At the same time, unprocessed semiconductor wafers are loaded into the boat 3 from the outside. The unloading and unloading of the semiconductor wafer is usually performed one by one or a plurality of sheets at a time by an industrial robot (not shown).

前記半導体ウエハの搬出と搬入の作業の際には、清浄空気が流れるウエハストックエリアとロードロック室２とを隔てている開閉扉が開くので、ロードロック室２内にこの清浄空気が流れ込むおそれがある。しかしながら、熱処理済みの半導体ウエハは、このときには既に冷却を完了しているので、この清浄空気によって悪影響を受けるおそれは生じない。そして、この半導体ウエハの搬出入が完了すると、直ちにロードロック室２の開閉扉が閉じられ、再びこのロードロック室２内を不活性雰囲気に戻す。   When the semiconductor wafer is carried out and carried in, the open / close door that separates the wafer stock area through which clean air flows and the load lock chamber 2 opens, so that the clean air may flow into the load lock chamber 2. is there. However, since the heat-treated semiconductor wafer has already been cooled at this time, there is no possibility of being adversely affected by the clean air. When the loading / unloading of the semiconductor wafer is completed, the door of the load lock chamber 2 is immediately closed, and the inside of the load lock chamber 2 is again returned to the inert atmosphere.

このようにして半導体ウエハの搬出と搬入が完了すると、図１（ａ）に示す最初の状態となる。そして、熱処理炉１内のボート３に搭載された半導体ウエハの熱処理が完了すると、再び前記動作を繰り返す。   When unloading and loading of the semiconductor wafer are completed in this way, the initial state shown in FIG. When the heat treatment of the semiconductor wafer mounted on the boat 3 in the heat treatment furnace 1 is completed, the above operation is repeated again.

以上説明したように、基本実施形態の半導体熱処理方法（請求項１に対応）及び半導体熱処理装置（請求項４に対応）によれば、前に熱処理を終えた半導体ウエハを冷却筒５内で冷却すると同時に、次の半導体ウエハの熱処理を並行して行うことができるので、作業全体のスループットを向上させることができるようになる。しかも、熱処理を終えた半導体ウエハは、冷却筒５内に収納されて冷却されるので、余熱が冷却筒５の外部に漏れだしロードロック室２内の未処理の半導体ウエハに悪影響を与えるようなこともなくなる。また、熱処理炉１は、内部で半導体ウエハを所要の取出し可能温度まで冷却する必要がないので、余分な蓄熱エネルギーのロスが生じることもなくなる。   As described above, according to the semiconductor heat treatment method (corresponding to claim 1) and the semiconductor heat treatment apparatus (corresponding to claim 4) of the basic embodiment, the semiconductor wafer which has been previously subjected to heat treatment is cooled in the cooling cylinder 5. At the same time, the heat treatment of the next semiconductor wafer can be performed in parallel, so that the throughput of the entire operation can be improved. Moreover, since the semiconductor wafer after the heat treatment is stored in the cooling cylinder 5 and cooled, the residual heat leaks out of the cooling cylinder 5 and adversely affects the unprocessed semiconductor wafer in the load lock chamber 2. Nothing will happen. Further, since the heat treatment furnace 1 does not need to cool the semiconductor wafer to a required temperature at which it can be taken out, no extra heat storage energy is lost.

ここで、請求項４にいう第１冷却筒移送装置とは、冷却筒５をロードロック室２内で移送する装置のことである（この目的を達成するために用いられる公知の他の手段も含む。）。そして、基本実施形態では、この冷却筒５を炉口１ａの下方に移送したり、この炉口１ａの下方から待避させるために、ロードロック室２内で冷却筒５に水平移送や回転を行わせ、また、熱処理炉１の下方等の所定位置で必要なだけ上下動させるリフタがこの第１冷却筒移送装置に該当する。   Here, the first cooling cylinder transfer device according to claim 4 is an apparatus for transferring the cooling cylinder 5 in the load lock chamber 2 (other known means used to achieve this purpose are also included). Including). In the basic embodiment, the cooling cylinder 5 is horizontally transferred or rotated to the cooling cylinder 5 in the load lock chamber 2 in order to transfer the cooling cylinder 5 to the lower side of the furnace port 1a or to retract from the lower side of the furnace port 1a. In addition, a lifter that moves up and down as necessary at a predetermined position such as below the heat treatment furnace 1 corresponds to the first cooling cylinder transfer device.

また、請求項４にいうボート炉口移送装置とは、ボート３を熱処理炉１の炉口１ａの下方に移送する装置のことである（この目的を達成するために用いられる公知の他の手段も含む。）。そして、基本実施形態では、ボート３をこのようにロードロック室２内で移送する図示しないリフタがこのボート炉口移送装置に該当する。   In addition, the boat furnace port transfer device referred to in claim 4 is a device for transferring the boat 3 to the lower side of the furnace port 1a of the heat treatment furnace 1 (other known means used to achieve this object). Including). In the basic embodiment, a lifter (not shown) that transfers the boat 3 in the load lock chamber 2 corresponds to the boat furnace port transfer device.

また、請求項４にいう第１ボート移送装置とは、この炉口１ａの下方のボート３を熱処理炉１内に移送したり、この熱処理炉１内から冷却筒５内に移送する装置のことである（この目的を達成するために用いられる公知の他の手段も含む。）。そして、基本実施形態では、ボート３をこのように移送するエレベータ載置部４とこのエレベータ載置部４を駆動する図示しないエレベータ装置がこの第１ボート移送装置に該当する。   The first boat transfer device according to claim 4 is a device for transferring the boat 3 below the furnace port 1a into the heat treatment furnace 1 or transferring it from the heat treatment furnace 1 into the cooling cylinder 5. (Including other known means used to achieve this purpose). And in basic embodiment, the elevator mounting part 4 which transfers the boat 3 in this way, and the elevator apparatus which is not shown in figure which drives this elevator mounting part 4 correspond to this 1st boat transfer apparatus.

また、請求項４にいうボート取出装置とは、ボート３を冷却筒から取り出す装置のことである（この目的を達成するために用いられる公知の他の手段も含む。）。そして、基本実施形態では、熱処理後の冷却が完了したボート３を残して、この冷却筒５のみをロードロック室２内で移送させるリフタがこのボート取出装置に該当する。これに限らず、基本実施形態は、ボート３を冷却筒５から取り出す任意の態様を含む。   The boat take-out device referred to in claim 4 is a device for taking out the boat 3 from the cooling cylinder (including other known means used to achieve this object). In the basic embodiment, the lifter that transfers only the cooling cylinder 5 in the load lock chamber 2 while leaving the boat 3 that has been cooled after the heat treatment corresponds to the boat take-out device. The basic embodiment is not limited to this, and includes an arbitrary mode in which the boat 3 is taken out from the cooling cylinder 5.

なお、前記基本実施形態では、冷却筒５が水冷ジャケットと冷却ガスにより内部を冷却する場合を示したが、この冷却筒５の冷却手段は任意であり、ジャケット内に水等の液体を流すことによる冷却だけとしたり、冷却筒５内に冷却ガスを流すことによる冷却だけ（ただし、この場合は、冷却筒５は別途手段、例えば断熱材等により、外部に対して充分に断熱されている必要がある）でもよく、これら以外の冷媒の循環により冷却したり、外部から電力を供給してペルチェ効果により冷却することも可能である。   In the basic embodiment, the cooling cylinder 5 is cooled by the water cooling jacket and the cooling gas. However, the cooling means of the cooling cylinder 5 is arbitrary, and a liquid such as water is allowed to flow in the jacket. Cooling only by cooling or by cooling gas flowing into the cooling cylinder 5 (in this case, the cooling cylinder 5 needs to be sufficiently insulated from the outside by a separate means such as a heat insulating material) It is also possible to cool by circulation of other refrigerants, or by supplying electric power from the outside and cooling by the Peltier effect.

また、前記基本実施形態では、半導体ウエハの搬出と搬入をロードロック室２内の奥側で行う場合を示したが、手前側やその他の位置で行うこともできる。ただし、前記基本実施形態のように、ロードロック室２内の奥側で半導体ウエハの搬出入を行った方が、ボート３や冷却筒５の移送回数を少なくすることができる。さらに、図１（ｅ）に示した状態で、ボート３を冷却筒５内に収納したまま、この冷却筒５の周側面の開閉扉とロードロック室２の開閉扉を同時に開けて、半導体ウエハの搬出と搬入を行うこともできる。   Further, in the basic embodiment, the case where the semiconductor wafer is carried out and carried in at the back side in the load lock chamber 2 is shown, but it can also be carried out at the front side or other positions. However, as in the basic embodiment, the number of times the boat 3 and the cooling cylinder 5 are transferred can be reduced when the semiconductor wafer is carried in and out on the back side in the load lock chamber 2. Further, in the state shown in FIG. 1 (e), while the boat 3 is housed in the cooling cylinder 5, the opening / closing door on the peripheral side surface of the cooling cylinder 5 and the opening / closing door of the load lock chamber 2 are simultaneously opened. Can also be carried out and carried in.

また、前記基本実施形態では、２個のボート３が配置される場合を示したが、３個以上のボート３が配置されていてもよい。この場合、熱処理炉１と冷却筒５にそれぞれ１個ずつのボート３が収納されても、１個以上のボート３がロードロック室２内に残ることになるが、このボート３には、事前に未処理の半導体ウエハを搭載しておいてもよく、空のままにしておいてもよい。   Moreover, although the case where the two boats 3 were arrange | positioned was shown in the said basic embodiment, the three or more boats 3 may be arrange | positioned. In this case, even if one boat 3 is stored in each of the heat treatment furnace 1 and the cooling cylinder 5, one or more boats 3 remain in the load lock chamber 2. An unprocessed semiconductor wafer may be mounted on or may be left empty.

さらに、前記基本実施形態では、１個の冷却筒５が配置される場合を示したが、２個以上の冷却筒５を配置することもできる。この場合、ボート３も、冷却筒５の個数を超える数を配置すれば、複数のボート３の半導体ウエハを複数の冷却筒５で並行して冷却することができるので、熱処理炉１での熱処理よりも冷却筒５での冷却の方が長い時間を要するようなときに有効となる。   Furthermore, although the case where one cooling cylinder 5 was arrange | positioned was shown in the said basic embodiment, two or more cooling cylinders 5 can also be arrange | positioned. In this case, if the boats 3 are arranged in a number exceeding the number of the cooling cylinders 5, the semiconductor wafers of the plurality of boats 3 can be cooled in parallel by the plurality of cooling cylinders 5. This is effective when the cooling in the cooling cylinder 5 requires a longer time.

さらに、前記基本実施形態では、熱処理炉１が１個だけ設けられている場合を示したが、２個以上の熱処理炉１が同じロードロック室２に連通するようになっていてもよい。この場合、熱処理炉１の個数の２倍の数のボート３と熱処理炉１の個数と同数の冷却筒５が配置されていれば、各熱処理炉１ごとに前記基本実施形態と同様の方法で熱処理を行うことができる。   Furthermore, although the case where only one heat treatment furnace 1 is provided in the basic embodiment, two or more heat treatment furnaces 1 may communicate with the same load lock chamber 2. In this case, if the number of boats 3 twice as many as the number of heat treatment furnaces 1 and the same number of cooling cylinders 5 as the number of heat treatment furnaces 1 are arranged, each heat treatment furnace 1 is subjected to the same method as in the basic embodiment. Heat treatment can be performed.

ただし、熱処理炉１での熱処理よりも冷却筒５での冷却の方が短時間で済む場合には、熱処理炉１の個数よりも少ない数の冷却筒５であっても、各熱処理炉１でこの１個以上の冷却筒５を共用することにより無駄なく冷却を行うことができる。そして、ボート３も、熱処理炉１の個数を超える数があればよく、熱処理炉１の個数と冷却筒５の個数を合わせた数のボート３があれば、冷却筒５を無駄なく利用することができる。   However, in the case where the cooling in the cooling cylinder 5 can be completed in a shorter time than the heat treatment in the heat treatment furnace 1, even if the number of cooling cylinders 5 is smaller than the number of the heat treatment furnaces 1, By sharing the one or more cooling cylinders 5, cooling can be performed without waste. Also, the number of boats 3 need only exceed the number of heat treatment furnaces 1. If there are a number of boats 3 in which the number of heat treatment furnaces 1 and the number of cooling cylinders 5 are combined, the cooling cylinders 5 can be used without waste. Can do.

また、前記基本実施形態では、ロードロック室２内でボート３を冷却筒５から一旦取り出した後に（半導体ウエハの搬出入は、このボート３の取り出しの前後のいずれで行ってもよい）熱処理炉１に移送する場合を示したが、ボート３を冷却筒５に収納したまま半導体ウエハの搬出入を行い熱処理炉１に移送するようにしてもよい（請求項２及び請求項５に対応する）。この場合には、熱処理炉１の個数やボート３をさらに増やすことはできるが、冷却筒５は、このボート３の数と同数個が必要となる。   Further, in the basic embodiment, after the boat 3 is once taken out from the cooling cylinder 5 in the load lock chamber 2, the semiconductor wafer can be carried in / out before or after the boat 3 is taken out. However, the semiconductor wafers may be transferred in and out of the heat treatment furnace 1 while the boat 3 is housed in the cooling cylinder 5 (corresponding to claims 2 and 5). . In this case, the number of heat treatment furnaces 1 and the number of boats 3 can be further increased, but the same number of cooling cylinders 5 as the number of boats 3 are required.

ここで、請求項５にいう第２冷却筒移送装置とは、ボート３を収納したまま半導体ウエハの搬出入を行う冷却筒５をロードロック室２内で移送する装置のことである（この目的を達成するために用いられる公知の他の手段も含む。）。従って、この場合にも、請求項４の第１冷却筒移送装置と同様に、この冷却筒５を炉口１ａの下方に移送したり、この炉口１ａの下方から待避させるために、ロードロック室２内で冷却筒５に水平移送や回転を行わせ、また、熱処理炉１の下方等の所定位置で必要なだけ上下動させるリフタがこの第２冷却筒移送装置に該当する。しかも、この場合には、ボート３に搭載された半導体ウエハの搬出入のために冷却筒５に水平移送等を行わせるリフタもこの第２冷却筒移送装置に含むことができる。   Here, the second cooling cylinder transfer device according to claim 5 is an apparatus for transferring the cooling cylinder 5 for carrying in and out the semiconductor wafer while the boat 3 is accommodated in the load lock chamber 2 (for this purpose). Including other known means used to achieve this). Therefore, in this case as well, in the same manner as the first cooling cylinder transfer device of claim 4, in order to transfer the cooling cylinder 5 to the lower side of the furnace port 1a or to retract from the lower side of the furnace port 1a, A lifter that causes the cooling cylinder 5 to perform horizontal transfer and rotation in the chamber 2 and moves up and down as necessary at a predetermined position such as below the heat treatment furnace 1 corresponds to the second cooling cylinder transfer device. In addition, in this case, a lifter that causes the cooling cylinder 5 to perform horizontal transfer or the like for loading / unloading of semiconductor wafers mounted on the boat 3 can also be included in the second cooling cylinder transfer device.

また、請求項５にいう第２ボート移送装置とは、冷却筒５内のボート３を熱処理炉１内に移送したり、この熱処理炉１内から冷却筒５内に移送する装置のことである（この目的を達成するために用いられる公知の他の手段も含む。）。そして、この場合には、冷却筒５内と熱処理炉１内との間でボート３をこのように移送するエレベータ載置部４とこのエレベータ載置部４を駆動する図示しないエレベータ装置がこの第２ボート移送装置に該当する。   The second boat transfer device according to claim 5 is a device for transferring the boat 3 in the cooling cylinder 5 into the heat treatment furnace 1 or transferring it from the heat treatment furnace 1 into the cooling cylinder 5. (Including other known means used to achieve this purpose). In this case, an elevator mounting portion 4 for transferring the boat 3 between the cooling cylinder 5 and the heat treatment furnace 1 and an elevator device (not shown) for driving the elevator mounting portion 4 are provided in this way. It corresponds to a two-boat transfer device.

例えば図３に示すように、熱処理炉が１個であって、３個ずつのボート３と冷却筒５が配置されている場合、熱処理炉１の下方をこれらの冷却筒５が図３の矢印に示すように順に三角形状に移送されるようにすれば、熱処理炉１での熱処理よりも冷却筒５での冷却の方が長い時間を要するときにも、この熱処理炉１が空のまま待ち時間が生じるようなことがなくなる。ただし、この場合にも、冷却時間が熱処理時間の２倍を超えると、熱処理炉１に待ち時間が生じることになるが、このように冷却時間が極めて長くなるとき（逆に熱処理時間が短くなるときであっても同様）には、ボート３と冷却筒５の個数をさらに増加すればよい。   For example, as shown in FIG. 3, when there is one heat treatment furnace and three boats 3 and cooling cylinders 5 are arranged, these cooling cylinders 5 are arranged below the heat treatment furnace 1 with arrows in FIG. 3. As shown in FIG. 5, when the heat transfer furnace 1 is sequentially transferred in a triangular shape, the heat treatment furnace 1 is kept empty even when the cooling cylinder 5 requires longer time than the heat treatment in the heat treatment furnace 1. There will be no time. However, in this case as well, if the cooling time exceeds twice the heat treatment time, a waiting time is generated in the heat treatment furnace 1, but when the cooling time becomes extremely long in this way (conversely, the heat treatment time becomes short). In some cases, the number of boats 3 and cooling cylinders 5 may be further increased.

また、例えば図４に示すように、ロードロック室２の上方に２個の熱処理炉１を設けると共に、ボート３と冷却筒５も４個ずつ配置した場合には、ロードロック室２内で４個の冷却筒５を図４の矢印に示すように順に四角形状に移送すれば、１個の熱処理炉１と２個ずつのボート３と冷却筒５を配置した場合とほぼ同様の大きさのロードロック室２を用いて、処理能力を２倍に向上させることができるようになる。   For example, as shown in FIG. 4, when two heat treatment furnaces 1 are provided above the load lock chamber 2 and four boats 3 and four cooling cylinders 5 are arranged, 4 in the load lock chamber 2. If the individual cooling cylinders 5 are sequentially transferred in a quadrangular shape as indicated by the arrows in FIG. 4, the size is almost the same as when one heat treatment furnace 1, two boats 3 and two cooling cylinders 5 are arranged. By using the load lock chamber 2, the processing capacity can be improved by a factor of two.

ただし、この図４の場合には、図１及び図２に示した構成と同様に、熱処理時間が冷却時間よりも長い場合に最適な構成であり、冷却時間が熱処理時間よりも長くなる場合には、ボート３と冷却筒５の個数をさらに増加すればよい。即ち、例えば図５に示すように、２個の熱処理炉１と６個ずつのボート３と冷却筒５を配置すれば、図３に示した構成と同様に、冷却時間が熱処理時間の２倍を超えるまでは、熱処理炉１に待ち時間が生じることがない。しかも、この図５の場合には、図４に示した構成と同様に、ロードロック室２内のスペースを有効に活用することができる。   However, in the case of FIG. 4, similarly to the configuration shown in FIGS. 1 and 2, the configuration is optimal when the heat treatment time is longer than the cooling time, and the cooling time is longer than the heat treatment time. The number of boats 3 and cooling cylinders 5 may be increased further. That is, for example, as shown in FIG. 5, if two heat treatment furnaces 1, six boats 3 and cooling cylinders 5 are arranged, the cooling time is twice the heat treatment time as in the configuration shown in FIG. Until this time is exceeded, there is no waiting time in the heat treatment furnace 1. In addition, in the case of FIG. 5, the space in the load lock chamber 2 can be effectively utilized as in the configuration shown in FIG. 4.

また、前記基本実施形態では、ロードロック室２内に冷却筒５を配置する場合を示したが、この冷却筒５の内部を外部から気密状態にして不活性雰囲気とすることができるようにして、ロードロック室２と同様の機能を持たせることにより、このロードロック室２を用いないようにすることもできる（請求項３及び請求項６に対応）。   Moreover, although the case where the cooling cylinder 5 was arrange | positioned in the load lock chamber 2 was shown in the said basic embodiment, the inside of this cooling cylinder 5 was made airtight from the outside so that it could be made an inert atmosphere. By providing the same function as that of the load lock chamber 2, the load lock chamber 2 can be prevented from being used (corresponding to claims 3 and 6).

この場合にも、請求項２及び請求項５の場合と同様に、ボート３を冷却筒５に収納した状態から熱処理炉１に移送することになるので、１個以上の熱処理炉１に対して、この熱処理炉１の個数を超えるボート３と、このボート３の数と同数の冷却筒５を用いて、各熱処理炉１で熱処理を行うと同時に１個以上の冷却筒５で冷却処理を並行して実行することができる。ただし、冷却筒５に収納したボート３を熱処理炉１内に移送したり、熱処理後にこの熱処理炉１内のボート３を冷却筒５に収納する際には、これらの冷却筒５を熱処理炉１の炉口１ａに気密に接続して、外気が入り込まないようにし、不活性雰囲気を維持する必要がある。   Also in this case, the boat 3 is transferred from the state accommodated in the cooling cylinder 5 to the heat treatment furnace 1 as in the case of the second and fifth aspects. The number of the boats 3 exceeding the number of the heat treatment furnaces 1 and the same number of the cooling tubes 5 as the number of the boats 3 are used to perform the heat treatment in each heat treatment furnace 1 and simultaneously perform the cooling treatment in one or more cooling tubes 5. And can be executed. However, when the boat 3 accommodated in the cooling cylinder 5 is transferred into the heat treatment furnace 1 or when the boat 3 in the heat treatment furnace 1 is accommodated in the cooling cylinder 5 after the heat treatment, these cooling cylinders 5 are stored in the heat treatment furnace 1. It is necessary to airtightly connect to the furnace port 1a so as to prevent outside air from entering and to maintain an inert atmosphere.

もっとも、冷却筒５内のボート３に半導体ウエハを搬出入する作業の際には、清浄空気が流れるウエハストックエリアと接続してから冷却筒５の開閉扉を開けるので、冷却筒５内にこの清浄空気が流れ込むおそれがある。しかしながら、熱処理済みの半導体ウエハは、このときには既に冷却を完了しているので、この清浄空気によって悪影響を受けるおそれは生じず、この半導体ウエハの搬出入が完了すると、直ちに冷却筒５の開閉扉が閉じられ、再びこの冷却筒５内を不活性雰囲気に戻す。   However, when the semiconductor wafer is carried in and out of the boat 3 in the cooling cylinder 5, the opening / closing door of the cooling cylinder 5 is opened after connecting to the wafer stock area through which clean air flows. Clean air may flow in. However, since the semiconductor wafer that has been heat-treated has already been cooled at this time, there is no possibility that it will be adversely affected by the clean air. As soon as the semiconductor wafer is completely loaded and unloaded, the opening / closing door of the cooling cylinder 5 is opened. Then, the inside of the cooling cylinder 5 is returned to the inert atmosphere.

ここで、請求項６にいう冷却筒気密装置とは、冷却筒の内部を外部から気密状態にするための装置のことであり（この目的を達成するために用いられる公知の他の手段も含む。）、請求項６にいう冷却筒接続装置とは、炉口下方に配置された冷却筒をこの炉口に気密に接続するための装置のことである（この目的を達成するために用いられる公知の他の手段も含む。）。   Here, the cooling cylinder airtight device referred to in claim 6 is an apparatus for bringing the inside of the cooling cylinder into an airtight state from the outside (including other known means used for achieving this object). .), The cooling cylinder connecting device according to claim 6 is an apparatus for airtightly connecting a cooling cylinder arranged below the furnace port to the furnace port (used to achieve this object). Including other known means).

また、請求項６にいう第３冷却筒移送装置とは、外部から気密状態にして不活性雰囲気とすることができる冷却筒５を移送する装置のことであり（この目的を達成するために用いられる公知の他の手段も含む。）、ロードロック室２が存在しないことを除けば、請求項５の第２冷却筒移送装置と同様のものである。従って、この場合にも、この冷却筒５を炉口１ａの下方に移送したり、この炉口１ａの下方から待避させるために、冷却筒５に水平移送や回転を行わせ、また、熱処理炉１の下方等の所定位置で必要なだけ上下動させるリフタがこの第３冷却筒移送装置に該当する。しかも、この場合には、冷却筒接続装置による冷却筒５と熱処理炉１の炉口１ａとの気密接続が可能となる位置までの移送を行うリフタもこの第３冷却筒移送装置に含むことができる。   The third cooling cylinder transfer device according to claim 6 is an apparatus for transferring the cooling cylinder 5 that can be made in an airtight state from the outside to create an inert atmosphere (used to achieve this object). Other known means are also included.) Except for the absence of the load lock chamber 2, the second cooling cylinder transfer device is the same as the second cooling cylinder transfer device of claim 5. Therefore, also in this case, in order to transfer the cooling cylinder 5 to the lower side of the furnace port 1a or to retract from the lower side of the furnace port 1a, the cooling cylinder 5 is horizontally transferred and rotated, and the heat treatment furnace A lifter that moves up and down as much as necessary at a predetermined position such as below 1 corresponds to the third cooling cylinder transfer device. In addition, in this case, the third cooling cylinder transfer device may also include a lifter that transfers the cooling cylinder 5 to the position where the hermetic connection between the cooling cylinder 5 and the furnace port 1a of the heat treatment furnace 1 is possible. it can.

また、請求項６にいう第３ボート移送装置とは、炉口１ａに気密に接続された冷却筒５内からボート３を熱処理炉１内に移送したり、この熱処理炉１内からボート３を炉口１ａに気密に接続された冷却筒５内に移送するための装置のことである（この目的を達成するために用いられる公知の他の手段も含む。）。ただし、請求項５の第２ボート移送装置とは異なり、熱処理炉１から冷却筒５にボート３を収納する場合やこの冷却筒５から熱処理炉１にボート３を移送する場合に、これら互いに接続された冷却筒５と熱処理炉１の内部の気密状態を損なうことがないようにする必要がある。   Further, the third boat transfer device according to claim 6 transfers the boat 3 into the heat treatment furnace 1 from the inside of the cooling cylinder 5 hermetically connected to the furnace port 1a, or transfers the boat 3 from within the heat treatment furnace 1 into the heat treatment furnace 1. It is an apparatus for transporting into the cooling cylinder 5 hermetically connected to the furnace port 1a (including other known means used to achieve this object). However, unlike the second boat transfer apparatus of claim 5, these are connected to each other when the boat 3 is stored in the cooling cylinder 5 from the heat treatment furnace 1 or when the boat 3 is transferred from the cooling cylinder 5 to the heat treatment furnace 1. It is necessary not to impair the airtight state inside the cooling cylinder 5 and the heat treatment furnace 1.

また、前記実施形態では、半導体ウエハの熱処理を行う場合について説明したが、例えばガラス基板上に半導体を形成したような半導体部材の熱処理を行う場合についても同様に実施可能である。   Moreover, although the case where the heat processing of a semiconductor wafer was demonstrated in the said embodiment, the case where the heat processing of the semiconductor member which formed the semiconductor on the glass substrate, for example is performed similarly is possible.

本発明によれば、熱処理済みの半導体部材をボートと共に冷却筒に収納し、熱処理炉の炉口下方から待避させて冷却するので、この冷却の間に、未処理の半導体部材を搭載したボートを熱処理炉内に移送することが可能になる。従って、本発明の半導体熱処理方法及び半導体熱処理装置は、半導体部材の冷却と熱処理とを並行して行うことにより、作業全体のスループットを向上させることができる。
According to the present invention, the heat-treated semiconductor member is housed in the cooling cylinder together with the boat, and is cooled by being retracted from the bottom of the furnace port of the heat treatment furnace. It can be transferred into a heat treatment furnace. Therefore, the semiconductor heat treatment method and the semiconductor heat treatment apparatus of the present invention can improve the throughput of the entire work by performing the cooling and heat treatment of the semiconductor member in parallel.

Claims (6)

熱処理炉の下方に炉口を通じて連通するロードロック室内で、空の冷却筒を炉口下方に移送する工程と、
熱処理済みの半導体部材を搭載した熱処理炉内のボートをこの空の冷却筒に収納する工程と、
この熱処理済みの半導体部材を搭載したボートを収納した冷却筒をロードロック室内で炉口下方から待避させる工程と、
未処理の半導体部材を搭載した別のボートをロードロック室内で炉口下方に移送する工程と、
このボートを熱処理炉内に移送して熱処理を行う工程と、
待避していた冷却筒から熱処理後の冷却が完了したボートを取り出す工程と、
ボートから半導体部材を搬出する工程と、
このボートに未処理の半導体部材を搬入する工程を備えたことを特徴とする半導体熱処理方法。A step of transferring an empty cooling cylinder below the furnace port in a load lock chamber communicating with the lower part of the heat treatment furnace through the furnace port;
Storing a boat in a heat treatment furnace equipped with a heat-treated semiconductor member in this empty cooling cylinder;
A step of retracting a cooling cylinder containing a boat loaded with the heat-treated semiconductor member from the bottom of the furnace port in the load lock chamber;
A step of transferring another boat loaded with unprocessed semiconductor members below the furnace port in the load lock chamber;
A process of transferring the boat into a heat treatment furnace and performing a heat treatment;
A step of taking out the boat after cooling after the heat treatment from the cooling cylinder that has been evacuated;
A step of unloading the semiconductor member from the boat;
A semiconductor heat treatment method comprising a step of carrying an untreated semiconductor member into the boat. 熱処理炉の下方に炉口を通じて連通するロードロック室内で、空の冷却筒を炉口下方に移送する工程と、
熱処理済みの半導体部材を搭載した熱処理炉内のボートをこの空の冷却筒に収納する工程と、
この熱処理済みの半導体部材を搭載したボートを収納した冷却筒をロードロック室内で炉口下方から待避させる工程と、
未処理の半導体部材を搭載したボートを収納した別の冷却筒をロードロック室内で炉口下方に移送する工程と、
この炉口下方に移送した冷却筒のボートを熱処理炉内に移送して熱処理を行う工程と、
待避していた冷却筒に収納されたボートから熱処理後の冷却が完了した半導体部材を搬出する工程と、
この冷却筒に収納されたボートに未処理の半導体部材を搬入する工程を備えたことを特徴とする半導体熱処理方法。A step of transferring an empty cooling cylinder below the furnace port in a load lock chamber communicating with the lower part of the heat treatment furnace through the furnace port;
Storing a boat in a heat treatment furnace equipped with a heat-treated semiconductor member in this empty cooling cylinder;
A step of retracting a cooling cylinder containing a boat loaded with the heat-treated semiconductor member from the bottom of the furnace port in the load lock chamber;
Transferring another cooling cylinder containing a boat loaded with unprocessed semiconductor members to the lower part of the furnace port in the load lock chamber;
A step of transferring the boat of the cooling cylinder transferred to the lower part of the furnace port into the heat treatment furnace and performing the heat treatment;
A step of carrying out the semiconductor member that has been cooled after the heat treatment from the boat stored in the cooling cylinder that has been evacuated;
A semiconductor heat treatment method comprising a step of carrying an untreated semiconductor member into a boat housed in the cooling cylinder. 内部を外部から気密状態にして不活性雰囲気とした空の冷却筒を熱処理炉の炉口下方に移送してこの炉口に気密に接続する工程と、
熱処理済みの半導体部材を搭載した熱処理炉内のボートをこの空の冷却筒に収納する工程と、
この熱処理済みの半導体部材を搭載したボートを収納した冷却筒の内部を外部から気密状態にして、この冷却筒を熱処理炉の炉口下方から待避させる工程と、
未処理の半導体部材を搭載したボートを収納し、内部を外部から気密状態にして不活性雰囲気とした別の冷却筒を熱処理炉の炉口下方に移送してこの炉口に気密に接続する工程と、
この別の冷却筒に収納されたボートを熱処理炉内に移送して熱処理を行う工程と、
待避していた冷却筒に収納されたボートから半導体部材を搬出する工程と、
この冷却筒に収納されたボートに未処理の半導体部材を搬入する工程を備えたことを特徴とする半導体熱処理方法。A step of transferring an empty cooling cylinder in an airtight state from the outside to an inert atmosphere and connecting the furnace port to the furnace port in an airtight manner;
Storing a boat in a heat treatment furnace equipped with a heat-treated semiconductor member in this empty cooling cylinder;
A step of making the inside of the cooling cylinder containing the boat carrying the heat-treated semiconductor member airtight from the outside, and retracting the cooling cylinder from below the furnace port of the heat treatment furnace;
A process of storing a boat loaded with unprocessed semiconductor members, transferring another cooling cylinder in an airtight state from the outside to an inert atmosphere, and connecting it to the furnace port in an airtight manner When,
A step of transferring the boat housed in the other cooling cylinder to a heat treatment furnace and performing a heat treatment;
A step of carrying out the semiconductor member from the boat housed in the cooling cylinder that has been evacuated;
A semiconductor heat treatment method comprising a step of carrying an untreated semiconductor member into a boat housed in the cooling cylinder. ボートに搭載された半導体部材の熱処理を行う１以上の熱処理炉と、この１以上の熱処理炉の下方に炉口を通じて連通するロードロック室とを備えた半導体熱処理装置において、
熱処理炉の個数を超える数のボートが配置されると共に、ロードロック室内に、１個のボートに搭載された半導体部材の冷却を行う１以上の冷却筒が配置され、
冷却筒をロードロック室内で移送することができる第１冷却筒移送装置と、
半導体部材を搭載したボートを炉口下方に移送するボート炉口移送装置と、
半導体部材を搭載したボートを熱処理炉内に移送するとともに、この熱処理炉内から半導体部材を搭載したボートを炉口下方に配置された冷却筒内に移送する第１ボート移送装置と、
冷却筒から半導体部材を搭載したボートを取り出すボート取出装置と
を備えたことを特徴とする半導体熱処理装置。In a semiconductor heat treatment apparatus comprising one or more heat treatment furnaces for heat treatment of semiconductor members mounted on a boat, and a load lock chamber communicating with the lower part of the one or more heat treatment furnaces through a furnace port,
The number of boats exceeding the number of heat treatment furnaces is arranged, and one or more cooling cylinders for cooling the semiconductor members mounted on one boat are arranged in the load lock chamber,
A first cooling cylinder transfer device capable of transferring the cooling cylinder in the load lock chamber;
A boat furnace port transfer device for transferring a boat loaded with a semiconductor member below the furnace port;
A first boat transfer device for transferring a boat loaded with semiconductor members into a heat treatment furnace, and transferring a boat loaded with semiconductor members from the heat treatment furnace into a cooling cylinder disposed below the furnace port;
A semiconductor heat treatment apparatus, comprising: a boat take-out device for taking out a boat carrying a semiconductor member from a cooling cylinder. ボートに搭載された半導体部材の熱処理を行う１以上の熱処理炉と、この１以上の熱処理炉の下方に炉口を通じて連通するロードロック室とを備えた半導体熱処理装置において、
熱処理炉の個数を超える数のボートが配置されると共に、ロードロック室内に、１個のボートに搭載された半導体部材の冷却を行う冷却筒がこのボートの数と同数配置され、
冷却筒をロードロック室内で移送することができる第２冷却筒移送装置と、
炉口下方に配置された冷却筒内から半導体部材を搭載したボートを熱処理炉内に移送すると共に、この熱処理炉内から半導体部材を搭載したボートを炉口下方に配置された冷却筒内に移送する第２ボート移送装置と
を備えたことを特徴とする半導体熱処理装置。In a semiconductor heat treatment apparatus comprising one or more heat treatment furnaces for heat treatment of semiconductor members mounted on a boat, and a load lock chamber communicating with the lower part of the one or more heat treatment furnaces through a furnace port,
A number of boats exceeding the number of heat treatment furnaces are arranged, and cooling cylinders for cooling semiconductor members mounted on one boat are arranged in the load lock chamber in the same number as the number of boats.
A second cooling cylinder transfer device capable of transferring the cooling cylinder in the load lock chamber;
The boat loaded with the semiconductor member is transferred from the cooling cylinder disposed below the furnace port into the heat treatment furnace, and the boat loaded with the semiconductor member is transferred from the heat treatment furnace to the cooling cylinder disposed below the furnace port. A semiconductor heat treatment apparatus, comprising: a second boat transfer device. ボートに搭載された半導体部材の熱処理を行い下方に炉口を有する１以上の熱処理炉を備えた半導体熱処理装置において、
熱処理炉の個数を超える数のボートと、
内部を外部から気密状態にして不活性雰囲気とすることができ、１個のボートに搭載された半導体部材の冷却を行う、このボートの数と同数の冷却筒と、
冷却筒を移送することができる第３冷却筒移送装置と、
冷却筒の内部を外部から気密状態にする冷却筒気密装置と、
炉口下方に配置された冷却筒をこの炉口に気密に接続する冷却筒接続装置と、
炉口に気密に接続された冷却筒内から半導体部材を搭載したボートを熱処理炉内に移送すると共に、この熱処理炉内から半導体部材を搭載したボートを炉口に気密に接続された冷却筒内に移送する第３ボート移送装置と
を備えたことを特徴とする半導体熱処理装置。In a semiconductor heat treatment apparatus provided with one or more heat treatment furnaces for performing heat treatment of a semiconductor member mounted on a boat and having a furnace port below,
More boats than the number of heat treatment furnaces,
The inside can be made airtight from the outside to be an inert atmosphere, and the cooling members of the same number as the number of boats for cooling semiconductor members mounted on one boat,
A third cooling cylinder transfer device capable of transferring the cooling cylinder;
A cooling cylinder hermetic device for making the inside of the cooling cylinder airtight from the outside;
A cooling cylinder connecting device for airtightly connecting a cooling cylinder disposed below the furnace opening to the furnace opening;
A boat loaded with semiconductor members is transferred into a heat treatment furnace from a cooling cylinder that is airtightly connected to the furnace port, and a boat loaded with semiconductor members is transferred from the heat treatment furnace to the furnace port in an airtight manner. And a third boat transfer device for transferring to the semiconductor.
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