JPH06111369A - Informaiton recording member and recording and recording method - Google Patents
Informaiton recording member and recording and recording methodInfo
- Publication number
- JPH06111369A JPH06111369A JP5192155A JP19215593A JPH06111369A JP H06111369 A JPH06111369 A JP H06111369A JP 5192155 A JP5192155 A JP 5192155A JP 19215593 A JP19215593 A JP 19215593A JP H06111369 A JPH06111369 A JP H06111369A
- Authority
- JP
- Japan
- Prior art keywords
- recording
- mask layer
- layer
- information
- dye
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims description 10
- 230000003287 optical effect Effects 0.000 claims abstract description 12
- 238000010521 absorption reaction Methods 0.000 claims description 20
- 238000002844 melting Methods 0.000 claims description 14
- 230000008018 melting Effects 0.000 claims description 14
- 229910052714 tellurium Inorganic materials 0.000 claims description 5
- 229910010272 inorganic material Inorganic materials 0.000 claims description 3
- 239000011147 inorganic material Substances 0.000 claims description 3
- 230000001678 irradiating effect Effects 0.000 claims description 3
- 229910052711 selenium Inorganic materials 0.000 claims description 3
- 229910052745 lead Inorganic materials 0.000 claims description 2
- 229910052717 sulfur Inorganic materials 0.000 claims description 2
- 229910052718 tin Inorganic materials 0.000 claims description 2
- 229910052738 indium Inorganic materials 0.000 claims 1
- 239000000126 substance Substances 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 107
- 230000000694 effects Effects 0.000 description 15
- 239000011241 protective layer Substances 0.000 description 10
- 239000000758 substrate Substances 0.000 description 8
- 230000006378 damage Effects 0.000 description 6
- LKKPNUDVOYAOBB-UHFFFAOYSA-N naphthalocyanine Chemical compound N1C(N=C2C3=CC4=CC=CC=C4C=C3C(N=C3C4=CC5=CC=CC=C5C=C4C(=N4)N3)=N2)=C(C=C2C(C=CC=C2)=C2)C2=C1N=C1C2=CC3=CC=CC=C3C=C2C4=N1 LKKPNUDVOYAOBB-UHFFFAOYSA-N 0.000 description 6
- 238000002834 transmittance Methods 0.000 description 6
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 239000011368 organic material Substances 0.000 description 4
- 230000005283 ground state Effects 0.000 description 3
- 239000004417 polycarbonate Substances 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 2
- 230000008033 biological extinction Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 229920000515 polycarbonate Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910017061 Fe Co Inorganic materials 0.000 description 1
- 229910018487 Ni—Cr Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000004770 chalcogenides Chemical class 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 230000005236 sound signal Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Landscapes
- Optical Recording Or Reproduction (AREA)
- Duplication Or Marking (AREA)
- Optical Record Carriers And Manufacture Thereof (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明はレーザ光等のビームによ
って、たとえば電子計算機のデータや、ファクシミリ信
号やディジタルオーディオ信号などのディジタル情報を
再生したり、あるいはリアルタイムで記録することが可
能な情報の記録用部材および記録方法に関するものであ
る。特に、高密度相変化型光ディスクに関するものであ
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention uses a beam of laser light or the like to reproduce, for example, data of an electronic computer, digital information such as a facsimile signal or a digital audio signal, or information which can be recorded in real time. The present invention relates to a recording member and a recording method. In particular, it relates to a high density phase change type optical disc.
【０００２】[0002]
【従来の技術】近年、情報も多種多様化し、ユーザが情
報を記録または情報を書き換えることができる書き換え
可能型光ディスクの要求が高くなってきた。また、情報
量も増大し、大容量の光ディスクが必要になってきた。
これに伴っていろいろな研究機関において光ディスクの
高密度化の検討が活発に行われている。たとえば、記録
レーザ波長の短波長化、絞り込みレンズの高ＮＡ（開口
比）化などによって記録点の大きさを小さくする方法
や、日経エレクトロニクス、５２１巻、第９２頁（１９
９１）に記載のように、情報を読み出すレーザビームの
スポット径を見かけ上小さくして高密度化を図ろうとす
る方法がある。2. Description of the Related Art In recent years, information has been diversified, and there has been an increasing demand for a rewritable optical disk on which a user can record information or rewrite information. In addition, the amount of information has increased, and a large-capacity optical disc has become necessary.
Along with this, various research institutes are actively studying how to increase the density of optical disks. For example, a method of reducing the size of the recording point by shortening the recording laser wavelength, increasing the NA (aperture ratio) of the focusing lens, Nikkei Electronics, Volume 521, page 92 (19).
As described in (91), there is a method in which the spot diameter of the laser beam for reading information is apparently made small to increase the density.
【０００３】[0003]
【発明が解決しようとする課題】従来の技術において、
読み出し層に記録点が転写される範囲を狭くすることに
より、情報を読み出すレーザビームのスポット径を見か
け上小さくして高密度化を図ろうとする方法が記録密度
向上の点では有利である。しかし、この場合にも記録点
を小さくする必要がある。そのため、光スポットの光強
度の先端部（キュリー温度以上に昇温した領域が記録点
となる）で記録を行っている。そのため、レーザの光強
度やレーザ光の集光点と記録膜面との相対位置が変動し
た場合、記録点の大きさが変動する可能性があり安定な
記録ができないという問題があった。SUMMARY OF THE INVENTION In the prior art,
A method of reducing the apparent spot diameter of the laser beam for reading information to increase the density by narrowing the range where the recording points are transferred to the reading layer is advantageous in terms of improving the recording density. However, also in this case, it is necessary to reduce the recording point. Therefore, recording is performed at the tip of the light intensity of the light spot (the recording point is the region heated to the Curie temperature or higher). Therefore, when the light intensity of the laser or the relative position between the condensing point of the laser light and the recording film surface changes, the size of the recording point may change, and stable recording cannot be performed.
【０００４】本発明の目的は、上記従来技術における問
題点を解決し、大容量でありかつ安定な記録が可能な情
報の記録用部材および記録再生方法を提供することにあ
る。SUMMARY OF THE INVENTION An object of the present invention is to solve the above problems in the prior art and provide a recording member for information and a recording / reproducing method which have a large capacity and enable stable recording.
【０００５】[0005]
【課題を解決するための手段】上述した従来技術におけ
る問題点を解決するために、本発明では、マスク層とし
て、たとえば色素を含む層を用いてレーザビームのスポ
ット径を等価的に小さくして高密度化を図っている。こ
の色素は、ナフタロシアニンなどであるが、あるしきい
値を越える強度のレーザ光が所定の時間照射されると基
底状態にある色素分子がなくなり、それ以上は光を吸収
しなくなる性質をもっている（吸収飽和）。すなわち、
情報トラック上の情報を読み出す場合には、しきい値を
越えた部分しか読み出すことができず、結果的には小さ
な光スポットで読み出したことと同じ効果が得られる
（マスク効果）。この時、少なくとも表面が有機物より
成る基板と記録膜との間に色素を含むマスク層を設ける
ことも考えられるが、本発明では、色素を含むマスク層
を、他の無機物層で挟む構造とした。例えば、Ａｌ合金
反射層やＺｎＳ系材料保護層などの無機物層の間に色素
を含むマスク層を形成することにより、機械的に強くな
り多数回の書き換えでも色素を含むマスク層の変形など
が抑えられる。また、色素を含むマスク層を記録膜より
反射層側に形成することにより、色素を含むマスク層で
発生した熱を反射層側へ逃がすことができ、色素を含む
マスク層の熱によるダメージが少なくなる。その結果、
記録時などの高温による層変形・構造破壊が少なくな
る。この時、熱伝導率が大きい反射層を用いる方が急速
に熱が逃げるため好ましい。そして色素を含むマスク層
は反射層に接して形成した方がさらに熱拡散効果が大き
く好ましい。In order to solve the above-mentioned problems in the prior art, in the present invention, as the mask layer, for example, a layer containing a dye is used to reduce the spot diameter of the laser beam equivalently. Aiming for higher density. This dye, which is naphthalocyanine or the like, has a property that when a laser beam having an intensity exceeding a certain threshold is irradiated for a predetermined time, the dye molecule in the ground state disappears and the light is no longer absorbed ( Absorption saturation). That is,
When reading the information on the information track, only the portion exceeding the threshold value can be read, and as a result, the same effect as reading with a small light spot is obtained (mask effect). At this time, it is conceivable to provide a mask layer containing a dye between at least the surface of the substrate made of an organic material and the recording film, but in the present invention, the mask layer containing the dye is sandwiched between other inorganic layers. . For example, by forming a mask layer containing a dye between inorganic material layers such as an Al alloy reflection layer and a ZnS-based material protective layer, mechanical strength is enhanced, and deformation of the mask layer containing the dye is suppressed even if it is rewritten many times. To be Further, by forming the mask layer containing the dye on the reflective layer side of the recording film, the heat generated in the mask layer containing the dye can be released to the reflective layer side, and the damage of the mask layer containing the dye due to the heat is reduced. Become. as a result,
Layer deformation and structural destruction due to high temperatures during recording are reduced. At this time, it is preferable to use a reflective layer having a large thermal conductivity because heat can be rapidly released. It is preferable that the mask layer containing the dye is formed in contact with the reflective layer because the heat diffusion effect is further increased.
【０００６】また、マスク層として色素を含む層に代え
て、低融点の無機物層でも良い。この時、ディスクが回
転している場合、レーザ照射されて記録膜の温度が最高
になる部分はレーザスポットの中心より少し遅れた部分
となる。そのために、融点を越えたスポットの後ろ側の
部分だけ屈折率が変化し、この部分の情報が大きく再生
されることになり、結果的には小さな光スポットで読み
出したことと同じ効果が得られる（マスク効果）。ここ
で無機物層は、融点が３００℃以下の物が低いパワーで
再生ができるため好ましい。また無機物層材質として
は、相変化型記録膜用材質として公知のものが融けたと
きの屈折率変化が大きいので好ましい。また例えば、Ａ
ｌ合金反射層やＺｎＳ系材料保護層などの無機物層の間
にこれら無機物のマスク層を形成することにより、機械
的に強くなり多数回の書き換えでもマスク層の変形など
が抑えられる。また、無機物のマスク層を記録膜より反
射層側に形成することにより、無機物のマスク層で発生
した熱を反射層側へ逃がすことができ、無機物のマスク
層の熱によるダメージが少なくなる。その結果、記録時
などの高温による層変形・構造破壊が少なくなる。この
時、熱伝導率が大きい反射層を用いる方が急速に熱が逃
げるため好ましい。そして無機物のマスク層は反射層に
接して形成した方がさらに熱拡散効果が大きくさらに好
ましい。The mask layer may be an inorganic layer having a low melting point instead of the layer containing a dye. At this time, when the disk is rotating, the portion where the temperature of the recording film is maximized by laser irradiation is a portion slightly behind the center of the laser spot. As a result, the refractive index changes only in the area behind the spot that has exceeded the melting point, and the information in this area is greatly reproduced, resulting in the same effect as reading with a small light spot. (Mask effect). Here, the inorganic material layer having a melting point of 300 ° C. or less is preferable because it can be reproduced with low power. Further, as the material of the inorganic layer, a material known as a material for a phase change recording film has a large change in refractive index when melted, which is preferable. Also, for example, A
By forming these inorganic mask layers between the inorganic alloy layers such as the 1-alloy reflective layer and the ZnS-based material protective layer, the mask layers are mechanically strengthened and deformation of the mask layers can be suppressed even when rewriting many times. Further, by forming the inorganic mask layer on the reflective layer side of the recording film, the heat generated in the inorganic mask layer can be released to the reflective layer side, and the damage of the inorganic mask layer due to the heat is reduced. As a result, layer deformation and structural destruction due to high temperatures during recording are reduced. At this time, it is preferable to use a reflective layer having a large thermal conductivity because heat can be rapidly released. It is more preferable that the inorganic mask layer is formed in contact with the reflective layer because the thermal diffusion effect is further increased.
【０００７】本発明では再生時の平均パワーよりも大き
く記録パワー（高いパワーレベル）よりも小さいレーザ
パワーで吸収飽和が起こる色素と記録膜との組み合わせ
を用いることにより、良好な記録再生が行える。特に消
去パワー（中間パワーレベル）と記録パワーの間にしき
い値が来るような色素と記録膜との組み合わせを用いる
方が、消え残りが少なく確実な記録再生が行えるためさ
らに好ましい。In the present invention, good recording and reproduction can be performed by using a combination of a dye and a recording film, which causes absorption saturation with a laser power larger than the average power during reproduction and smaller than the recording power (high power level). In particular, it is more preferable to use a combination of a dye and a recording film in which a threshold value is set between the erasing power (intermediate power level) and the recording power, because the unerased portion remains less and reliable recording / reproducing can be performed.
【０００８】また、色素を含む膜の吸収飽和が起こるし
きい値が、消去パワーと記録パワーの間にある場合に
は、消去パワーを記録パワーの０.５倍以上０.８倍以下
にすると消え残りの点で効果がある。０.６倍以上０.７
倍以下がさらに好ましい。これは消去パワー照射時にお
いて色素を含むマスク層が形成されていることにより反
射層からの反射光量が少なくなり記録膜での吸収量が少
なくなる。その結果、記録トラック周辺部での記録膜の
温度が低くなり消え残りが生じる。これを防ぐためにそ
の分消去パワーを高くするのである。しかし、色素を含
む膜の吸収飽和が起こるしきい値が、再生パワーと消去
パワーの間にある場合には、消去パワーが記録パワーの
０.５倍より小さくてもよい。Further, when the threshold value at which absorption saturation of the film containing the dye occurs is between the erasing power and the recording power, the erasing power is set to 0.5 times or more and 0.8 times or less of the recording power. Effective in the remaining points. 0.6 times or more 0.7
It is even more preferable to be 2 times or less. This is because the amount of light reflected from the reflective layer is reduced and the amount of absorption in the recording film is reduced due to the formation of the mask layer containing the dye during irradiation of the erasing power. As a result, the temperature of the recording film in the peripheral portion of the recording track becomes low, and the remaining portion remains. To prevent this, the erasing power is increased accordingly. However, the erase power may be smaller than 0.5 times the recording power when the threshold value at which absorption saturation of the film containing the dye occurs is between the reproduction power and the erase power.
【０００９】本発明では、再生光を連続光（ＤＣ光）と
しないで、パルス光とした方が微小な領域の再生が行え
るため好ましい。すなわち、再生光のピークパワーは記
録パワーに近く、パルス幅は記録幅よりも狭くする。こ
れにより、再生パルス光が照射された部分が吸収飽和を
起し、光スポットの中心付近の記録点だけが再生でき、
また熱の影響も少ないため再生時に記録状態に影響を与
えることもない。In the present invention, it is preferable that the reproduction light is not continuous light (DC light) but pulse light because reproduction of a minute region can be performed. That is, the peak power of the reproduction light is close to the recording power, and the pulse width is narrower than the recording width. As a result, the portion irradiated with the reproduction pulse light causes absorption saturation, and only the recording point near the center of the light spot can be reproduced,
In addition, since the influence of heat is small, it does not affect the recording state during reproduction.
【００１０】本発明に用いる記録膜としては、穴あけタ
イプの記録膜、高速記録・消去が可能な高融点の結晶−
非晶質相変化光記録膜、非晶質−非晶質間変化を利用す
る記録膜、結晶系や結晶粒径の変化などの結晶−結晶間
相変化記録膜および光磁気記録膜が好ましいが他の記録
膜でも良い。The recording film used in the present invention is a hole-type recording film, a high melting point crystal capable of high-speed recording / erasing.
Amorphous phase change optical recording film, recording film utilizing amorphous-amorphous change, crystal-crystal phase change recording film such as change in crystal system and crystal grain size, and magneto-optical recording film are preferable. Other recording films may be used.
【００１１】[0011]
【作用】本発明では、ナフタロシアニン色素のように、
あるしきい値を越える程度のレーザ光が照射されると基
底状態にある色素がなくなり、それ以上は光を吸収しな
くなる性質をもっており、かつ、耐熱性がある色素を含
むマスク層を設けている。また、記録パワーと消去パワ
ーの間に色素を含むマスク層の吸収飽和のしきい値が来
るようなディスク構造とし、消去パワーを記録パワーの
０.５倍以上とすれば、記録パワーが照射された部分の
みが吸収飽和を起して記録が行われ、消去パワーが照射
されていた部分では前の情報を確実に消去することがで
き、特に好ましい。そして、再生を行う場合、吸収飽和
を起すしきい値よりも低いレーザ光の照射の場合には、
色素の透過率が低いため相変化記録膜に記録されている
情報は読み出すことはできず、しきい値よりも高いレー
ザ光の照射を行なうことにより、その中心部分の色素の
透過率が高くなり記録膜に記録した情報が読み出せるこ
とになる。In the present invention, like the naphthalocyanine dye,
When a laser beam that exceeds a certain threshold is irradiated, the dye in the ground state disappears, and no more light is absorbed, and a mask layer containing a heat-resistant dye is provided. . In addition, when the disk structure is such that the threshold value of absorption saturation of the mask layer containing a dye is between the recording power and the erasing power, and the erasing power is 0.5 times or more of the recording power, the recording power is irradiated. It is particularly preferable that only the portion where the erasing power is generated is recorded due to absorption saturation and the portion where the erasing power is irradiated can surely erase the previous information. Then, in the case of reproducing, in the case of irradiation of laser light lower than the threshold value causing absorption saturation,
The information recorded on the phase-change recording film cannot be read because the transmittance of the dye is low, and the transmittance of the dye in the central part becomes high by irradiating the laser light higher than the threshold value. The information recorded on the recording film can be read.
【００１２】マスク層として色素を含む層に代えて、低
融点の無機物層を用いても同様な効果があった。Even if a low melting point inorganic layer was used as the mask layer instead of the dye-containing layer, the same effect was obtained.
【００１３】本発明のように、マスク層を無機物で挟む
構造としたことにより、書き換え可能回数が向上した。
これは、マスク層の両側にある無機物層が機械的強度を
向上させたことによる。また、マスク層と反射層を近接
して設けたことにより、記録膜およびマスク層で発生し
た熱を反射層側へ急速に逃す効果がある。この時の反射
層は、Ａｌ合金のように熱伝導率が高い反射層を用いる
方が熱による影響が少なく好ましい。As in the present invention, the structure in which the mask layer is sandwiched by the inorganic substances improves the number of rewritable times.
This is because the inorganic layers on both sides of the mask layer have improved mechanical strength. In addition, the provision of the mask layer and the reflective layer close to each other has the effect of rapidly releasing the heat generated in the recording film and the mask layer to the reflective layer side. As the reflective layer at this time, it is preferable to use a reflective layer having a high thermal conductivity such as an Al alloy because the influence of heat is small.
【００１４】本発明は、レーザ光照射により既存の情報
を消去しながら新しい情報を記録する、いわゆる１ビー
ムオーバーライトが可能な相変化型光ディスクや光磁気
ディスクに特に効果があるが、オーバーライトできない
光磁気ディスクや追記型光ディスクにも適している。ま
た、Ｔｅ，Ｓｅ，Ｓのうちより選ばれる少なくとも１種
類の元素を３０〜８５原子％含有するカルコゲン化物
（例えば、Ｉｎ−Ｓｅ，Ｇｅ−Ｓｂ−Ｔｅ，Ｉｎ−Ｓｂ
−Ｔｅを主成分とする記録膜）やＩｎ−Ｓｂを主成分と
する記録膜、そしてＴｂ−Ｆｅ−ＣｏやＰｔとＣｏを主
成分とする光磁気記録膜に対して特に有効である。ま
た、これらとは記録原理の異なる記録媒体を用いても良
い。The present invention is particularly effective for phase change type optical disks and magneto-optical disks capable of so-called one-beam overwriting, in which new information is recorded while erasing existing information by laser light irradiation, but it is not possible to overwrite. It is also suitable for magneto-optical disks and write-once optical disks. Further, a chalcogenide containing 30 to 85 atomic% of at least one element selected from Te, Se, and S (for example, In—Se, Ge—Sb—Te, In—Sb).
It is particularly effective for a recording film containing -Te as a main component), a recording film containing In-Sb as a main component, and a magneto-optical recording film containing Tb-Fe-Co or Pt and Co as main components. Further, a recording medium having a recording principle different from these may be used.
【００１５】記録用エネルギービームとしてはレーザ光
などの光ビームに限らず、記録膜の性質に応じてその他
の電子ビーム、イオンビームなどのエネルギービームも
使用可能である。また、記録媒体としてもディスク状の
みならずテープ状、カード状などの他の形態の記録媒体
が使用可能である。The energy beam for recording is not limited to a light beam such as a laser beam, but other energy beams such as an electron beam and an ion beam can be used depending on the properties of the recording film. Further, as the recording medium, not only a disc-shaped recording medium but also another recording medium such as a tape-shaped or card-shaped recording medium can be used.
【００１６】[0016]
【実施例】以下に本発明を実施例によって詳細に説明す
る。EXAMPLES The present invention will be described in detail below with reference to examples.
【００１７】実施例１ 図１は、本実施例のディスクの構造断面図の一例を示し
たものである。まず直径６.４ｃｍ，厚さ１.１ｍｍのト
ラッキング用の溝（溝ピッチ１.４μｍ)を有するポリカ
ーボネート基板１上に、マグネトロンスパッタリング法
により厚さ約１２５ｎｍのＺｎＳ−ＳｉＯ2下部保護層
２を形成した。このＺｎＳ−ＳｉＯ2保護層２上にスパ
ッタ法により高融点（融点：〜６５０℃）のＧｅ22Ｓｂ
26Ｔｅ50Ｃｏ2組成の記録膜３を約２０ｎｍの膜厚に形
成した。次にＺｎＳ−ＳｉＯ2の中間層４を約２１０ｎ
ｍの膜厚に形成した。さらに、マスク層としてナフタロ
シアニン色素が含まれた有機物層５を３００ｎｍ積層
し、この上にＮｉ−Ｃｒ反射層６を２００ｎｍつけた。
さらに，この上に紫外線硬化樹脂保護層７を設けた。そ
の後，この上に接着剤層８を介して，同じ構造のもう一
枚のディスクとの貼りあわせを行った。Embodiment 1 FIG. 1 shows an example of a structural sectional view of a disk of this embodiment. First, a ZnS—SiO 2 lower protective layer 2 having a thickness of about 125 nm is formed by a magnetron sputtering method on a polycarbonate substrate 1 having a tracking groove (groove pitch 1.4 μm) having a diameter of 6.4 cm and a thickness of 1.1 mm. did. On the ZnS-SiO 2 protective layer 2, a Ge 22 Sb having a high melting point (melting point: up to 650 ° C.) was formed by a sputtering method.
A recording film 3 having a composition of 26 Te 50 Co 2 was formed to a film thickness of about 20 nm. Next, an intermediate layer 4 of ZnS-SiO 2 was formed to a thickness of about 210 n.
It was formed to a film thickness of m. Further, an organic material layer 5 containing a naphthalocyanine dye was laminated in a thickness of 300 nm as a mask layer, and a Ni—Cr reflective layer 6 was applied in a thickness of 200 nm thereon.
Further, an ultraviolet curable resin protective layer 7 was provided on this. After that, another disk having the same structure was attached to the above via an adhesive layer 8.
【００１８】次に、記録再生原理を説明する。本実施例
では、ナフタロシアニン色素のように、耐熱性が有り、
あるしきい値を越える程度のレーザ光が照射されると基
底状態にある色素がなくなり、それ以上は光を吸収しな
くなる性質（吸収飽和）をもっている色素を使用する。
まず、半導体レーザから出た光ビームは、基板１を透過
して記録膜３に照射される。さらに記録膜３を透過した
光ビームは色素を含むマスク層５に照射される。この
時、光ビームスポットの中心で吸収飽和を起すしきい値
を越えた部分の透過率が大きくなる。そして、この透過
率が上昇した部分を通過したビームが反射層６で反射
し、記録膜側へ戻って多重反射を起す。その結果、記録
膜３上に形成される記録点の大きさは、色素を含むマス
ク層５で吸収飽和を起した部分の大きさで決まる。すな
わち吸収飽和を起す部分の大きさを小さくすることによ
り高密度化が可能である。Next, the recording / reproducing principle will be described. In this example, like the naphthalocyanine dye, it has heat resistance,
When a laser beam of a certain threshold is irradiated, the dye in the ground state disappears, and a dye having the property of not absorbing light further (absorption saturation) is used.
First, the light beam emitted from the semiconductor laser passes through the substrate 1 and is applied to the recording film 3. Further, the light beam transmitted through the recording film 3 is applied to the mask layer 5 containing a dye. At this time, the transmittance of the portion of the center of the light beam spot that exceeds the threshold value at which absorption saturation occurs is increased. Then, the beam that has passed through the portion where the transmittance is increased is reflected by the reflection layer 6, returns to the recording film side, and causes multiple reflection. As a result, the size of the recording point formed on the recording film 3 is determined by the size of the portion where absorption saturation occurs in the mask layer 5 containing the dye. That is, it is possible to increase the density by reducing the size of the portion that causes absorption saturation.
【００１９】本実施例では、色素を含むマスク層５を上
部保護層４と反射層６との間に形成したが、このように
無機物層の間に形成することにより機械的強度が増加
し、書き換え可能回数が増加した。たとえば、本実施例
のディスク構造では１０万回の書き換えを行ってもノイ
ズレベルの上昇はみられなかったが、色素を含むマスク
層５を基板１上に形成した場合には、１万回の書き換え
でノイズレベルが約５ｄＢ上昇した。この原因として
は、書き換えにより、色素を含むマスク層５が変形した
ものと考えられる。また、本実施例のように、反射層６
に接して、あるいは近接して、すなわち薄い他の層を介
して色素を含むマスク層５を設けることにより、色素を
含むマスク層５で発生した熱が反射層６側へ急速に逃げ
るため熱によるダメージが少なくなるという効果が有
る。特に、色素を含むマスク層５を反射層６と接して形
成した場合が効果が大きかった。In this embodiment, the mask layer 5 containing the dye is formed between the upper protective layer 4 and the reflective layer 6, but by forming it between the inorganic layers in this way, the mechanical strength is increased, The number of rewritable times has increased. For example, in the disc structure of this embodiment, no increase in noise level was observed even after rewriting 100,000 times, but when the mask layer 5 containing a dye was formed on the substrate 1, 10,000 times was performed. Rewriting increased the noise level by about 5 dB. It is considered that this is because the mask layer 5 containing the dye is deformed by rewriting. In addition, as in this embodiment, the reflective layer 6
By providing the mask layer 5 containing the dye in contact with or close to, that is, via another thin layer, the heat generated in the mask layer 5 containing the dye rapidly escapes to the reflective layer 6 side. It has the effect of reducing damage. In particular, the effect was great when the mask layer 5 containing a dye was formed in contact with the reflective layer 6.
【００２０】本実施例では、図２に示したような記録波
形を用いた。ここで、消去パワーと記録パワーの間にし
きい値を持ち、記録パワー照射で吸収飽和を起す色素を
用いた。これにより、記録パワーが照射された色素を含
む膜５上の部分では吸収飽和を起し、透過率が増大す
る。そして、この部分の大きさとほぼ等しい記録点が記
録膜３上に形成され、消去パワーが照射された部分では
前の情報の消去が行われる。この時、消去パワーが照射
されている部分では吸収飽和が起きないため透過率が低
くなるので、色素を含むマスク層が無い場合に適した記
録パワーと消去パワーとの比と同じにする場合は、消え
残りが大きくなる可能性があった。In this embodiment, the recording waveform as shown in FIG. 2 was used. Here, a dye having a threshold value between the erasing power and the recording power and causing absorption saturation upon irradiation with the recording power was used. As a result, absorption saturation occurs in the portion on the film 5 containing the dye irradiated with the recording power, and the transmittance increases. Then, a recording point approximately equal to the size of this portion is formed on the recording film 3, and the previous information is erased in the portion irradiated with the erasing power. At this time, since the absorption saturation does not occur in the portion irradiated with the erasing power, the transmittance becomes low. Therefore, when the ratio of the recording power and the erasing power which is suitable for the case where there is no mask layer containing a dye is made the same , There was a possibility that the remaining portion would be large.
【００２１】下記に消去パワーと記録パワーの比を変え
た場合の消え残りの値を示した。The following shows the remaining values when the ratio of the erasing power and the recording power is changed.
【００２２】 結果から、消去パワーを記録パワーの０.５倍以上０.８
倍以下とすることにより、消え残りを小さくすることが
できた。記録パワーの０.６倍以上０.７倍以下が特に好
ましい。[0022] From the results, the erasing power is 0.5 times the recording power or more and 0.8.
By making the amount less than or equal to twice, it was possible to reduce the remaining loss. It is particularly preferable that the recording power is 0.6 times or more and 0.7 times or less.
【００２３】また、情報の再生はデューティー比が０.
２より小さなパルスで行なった。これにより、温度上昇
による悪影響を避けて、読み出し時にも吸収飽和を利用
することができ、微小部分の再生が可能である。In reproducing information, the duty ratio is 0.0.
Performed with less than 2 pulses. As a result, the adverse effect of temperature rise can be avoided and absorption saturation can be utilized even during reading, and reproduction of a minute portion is possible.
【００２４】本実施例で用いた色素においては、吸収飽
和する部分は、約０.５μｍφ程度であり、次に読もう
としている同一トラック上の記録情報および隣の情報ト
ラックの情報は読み出されない。このため、従来に比べ
て記録点密度が２倍、線密度が２倍となり、トータルで
容量が４倍となった。In the dye used in this example, the absorption saturated portion is about 0.5 μmφ, and the recorded information on the same track and the information on the adjacent information track to be read next are not read. . Therefore, the recording point density and the linear density are doubled and the total capacity is quadrupled as compared with the conventional one.
【００２５】本実施例では、記録膜として高融点の相変
化型光記録膜を用いたが、光磁気記録膜でも同様な効果
があった。In this embodiment, a phase change type optical recording film having a high melting point was used as the recording film, but a magneto-optical recording film had the same effect.
【００２６】実施例２ 本実施例のディスクの構造は、実施例１と基本的に同じ
である。ただ、ナフタロシアニン色素が含まれた有機物
層に代えて、Ｔｅ20Ｓｅ80相変化マスク層を２５ｎｍ積
層した構造である。Embodiment 2 The disk structure of this embodiment is basically the same as that of the first embodiment. However, instead of the organic material layer containing the naphthalocyanine dye, a Te 20 Se 80 phase change mask layer having a thickness of 25 nm is laminated.
【００２７】次に、再生原理を説明する。本実施例で
は、Ｔｅ20Ｓｅ80相変化マスク層のように融点が２５０
℃と低く、膜が融けたときの屈折率変化が比較的大きい
無機物層を使用する。まず、半導体レーザから出た再生
光ビーム（連続光）は、ＰＣ基板を透過してＧｅ22Ｓｂ
26Ｔｅ50Ｃｏ2記録膜に照射される。さらに記録膜を透
過した再生光ビームはＴｅ20Ｓｅ80相変化マスク層に照
射される。この時、光ビームスポットよりも後ろ側の部
分でＴｅ20Ｓｅ80相変化マスク層膜の融点を越えた部分
の屈折率と消衰係数が小さくなる。そして、この屈折率
と消衰係数が低下した部分を通過したビームが反射層で
反射し、さらに記録膜側へ戻って多重反射を起こし，反
射率が低下する。その結果、光スポットとＴｅ20Ｓｅ80
相変化マスク層が融けていない部分とが重なった微小な
部分に存在する記録点だけを読むことができ，大きな再
生信号が得られる。マスク層が溶けない部分の再生光反
射率が特に低くなるように下部保護層および記録膜を選
び，マスク層が溶けた部分で，かつ光スポット内の領域
に存在する記録点を読むようにしても良い。ここで再生
光を連続光（ＤＣ光）としないで、パルス光としてもよ
い。Next, the reproducing principle will be described. In this embodiment, the melting point is 250 as in the case of the Te 20 Se 80 phase change mask layer.
Use an inorganic layer that has a relatively low refractive index change when the film melts at a low temperature of ℃. First, the reproduction light beam (continuous light) emitted from the semiconductor laser passes through the PC substrate and is Ge 22 Sb.
Irradiation is performed on the 26 Te 50 Co 2 recording film. Further, the reproduction light beam transmitted through the recording film is applied to the Te 20 Se 80 phase change mask layer. At this time, the refractive index and the extinction coefficient of the portion beyond the melting point of the Te 20 Se 80 phase change mask layer film in the portion behind the light beam spot become small. Then, the beam that has passed through the portion where the refractive index and the extinction coefficient are lowered is reflected by the reflective layer and further returns to the recording film side to cause multiple reflection, and the reflectance is lowered. As a result, the light spot and Te 20 Se 80
It is possible to read only the recording points existing in a minute portion where the phase change mask layer does not melt and overlaps, and a large reproduced signal can be obtained. The lower protective layer and the recording film may be selected so that the reproduction light reflectance is particularly low in the part where the mask layer is not melted, and the recording point existing in the part where the mask layer is melted and in the area within the light spot may be read. . Here, the reproduction light may be pulsed light instead of continuous light (DC light).
【００２８】本実施例では、Ｔｅ20Ｓｅ80相変化マスク
層を上部保護層と反射層との間に形成したが、このよう
に無機物層の間に形成することにより機械的強度が増加
し、書き換え可能回数が増加した。たとえば、本実施例
のディスク構造では５０万回の書き換えを行ってもノイ
ズレベルの上昇はみられなかったが、Ｔｅ20Ｓｅ80相変
化マスク層を基板上に形成した場合には、５万回の書き
換えでノイズレベルが約４ｄＢ上昇した。また、本実施
例のように、反射層に接して、あるいは近接して、すな
わち薄い他の層を介してＴｅ20Ｓｅ80相変化マスク層を
設けることにより、Ｔｅ20Ｓｅ80相変化マスク層で発生
した熱が反射層側へ急速に逃げるため熱によるダメージ
が少なくなるという効果が有る。特に、Ｔｅ20Ｓｅ80相
変化マスク層を反射層と接して形成した場合が効果が大
きかった。In this embodiment, the Te 20 Se 80 phase change mask layer is formed between the upper protective layer and the reflective layer. However, by forming the Te 20 Se 80 phase change mask layer between the upper layer and the reflective layer, the mechanical strength is increased. The number of rewritable times has increased. For example, in the disk structure of this embodiment, no increase in the noise level was observed even after rewriting 500,000 times, but when the Te 20 Se 80 phase change mask layer was formed on the substrate, it was 50,000 times. Rewriting increased the noise level by about 4 dB. Further, as in this embodiment, by providing the Te 20 Se 80 phase change mask layer in contact with or close to the reflection layer, that is, through another thin layer, the Te 20 Se 80 phase change mask layer can be formed. The generated heat rapidly escapes to the reflective layer side, which has the effect of reducing heat damage. In particular, the effect was great when the Te 20 Se 80 phase change mask layer was formed in contact with the reflective layer.
【００２９】マスク層として，低融点元素である，Ｉ
ｎ，Ｓｎ，Ｐｂ，Ｓｂ，Ｂｉ，Ｃｄ，Ｔｅ，およびＳｅ
のうちの少なくとも１元素を３０原子％以上含有した
膜，特に，結晶化させた後の融点が２５０℃以下の膜，
例えば，Ｓｎ70Ｐｂ30合金，Ｉｎ70Ｓｎ30合金を用いた
場合において，読み出しに必要なレーザパワーを下げる
ことができた。As a mask layer, a low melting point element, I
n, Sn, Pb, Sb, Bi, Cd, Te, and Se
A film containing at least one element of 30 atomic% or more, especially a film having a melting point of 250 ° C. or less after crystallization,
For example, when Sn 70 Pb 30 alloy or In 70 Sn 30 alloy was used, the laser power required for reading could be reduced.
【００３０】本実施例では、記録膜として高融点の相変
化型光記録膜を用いたが、光磁気記録膜でも同様な効果
があった。In this embodiment, a phase change type optical recording film having a high melting point was used as the recording film, but a magneto-optical recording film had the same effect.
【００３１】[0031]
【発明の効果】本発明のように、マスク層を無機物層で
挟み、さらにその片側の無機物層を熱伝導率が高い光反
射層とすることにより、マスク層を有する記録媒体の機
械的強度及び熱的強度を高くすることができ、書き換え
可能回数が向上した。また、記録点の大きさは吸収飽和
する領域の大きさで決定されるため、記録パワーやオー
トフォーカスの要求精度が上がるのを避けて安定な高密
度記録・再生が行えるようになった。記録媒体としても
ディスク状のみならずテープ状、カード状などの他の形
態の記録媒体が使用可能である。As in the present invention, the mask layer is sandwiched between the inorganic layers, and the inorganic layer on one side is a light reflecting layer having a high thermal conductivity, whereby the mechanical strength and the mechanical strength of the recording medium having the mask layer are improved. The thermal strength can be increased and the number of rewritable times is improved. Moreover, since the size of the recording point is determined by the size of the region where absorption and saturation occur, stable high-density recording / reproduction can be performed while avoiding an increase in the required accuracy of recording power and autofocus. As the recording medium, not only a disc-shaped recording medium but also another recording medium such as a tape-shaped or card-shaped recording medium can be used.
【図１】 ディスク基板の断面図。FIG. 1 is a sectional view of a disk substrate.
【図２】 記録・再生波形の模式図。FIG. 2 is a schematic diagram of recording / reproducing waveforms.
１，１’…ポリカーボネート基板、２，２’…ＺｎＳ−
ＳｉＯ2保護層、３，３’…Ｇｅ22Ｓｂ26Ｔｅ50Ｃｏ2記
録層、４，４’…ＺｎＳ−ＳｉＯ2中間層、５，５’…
ナフタロシアニン色素入りの有機物層、６，６’…Ａｌ
−Ｃｕ反射層、７，７’…紫外線硬化樹脂保護層、８…
接着層。1, 1 '... Polycarbonate substrate, 2, 2' ... ZnS-
SiO 2 protective layer, 3,3 '... Ge 22 Sb 26 Te 50 Co 2 recording layer, 4, 4' ... ZnS-SiO 2 intermediate layer, 5, 5 '...
Organic material layer containing naphthalocyanine dye, 6,6 '... Al
-Cu reflective layer, 7, 7 '... UV curable resin protective layer, 8 ...
Adhesive layer.
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.5 識別記号 庁内整理番号 ＦＩ 技術表示箇所 Ｇ１１Ｂ 11/10 Ｚ 9075−5Ｄ (72)発明者 岡峯 成範 東京都国分寺市東恋ケ窪１丁目280番地 株式会社日立製作所中央研究所内 (72)発明者 村瀬 至生 東京都国分寺市東恋ケ窪１丁目280番地 株式会社日立製作所中央研究所内 (72)発明者 有本 昭 東京都国分寺市東恋ケ窪１丁目280番地 株式会社日立製作所中央研究所内─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 5 Identification number Internal reference number in the agency FI Technical display location G11B 11/10 Z 9075-5D (72) Inventor Okamine Shigenori 1-280, Higashi Koikeku, Kokubunji, Tokyo Hitachi, Ltd. Central Research Laboratory (72) Inventor, Shigeo Murase, 1-280, Higashi Koikeku, Kokubunji, Tokyo, Hitachi, Ltd. (72) Inventor, Akira Arimoto 1-280, Higashi Koikeku, Tokyo Kokubunji Hitachi Central Research Laboratory
Claims (8)
加記録や書き換えができる書き込み可能型光ディスクに
おいて、記録膜に加えて、無機物の層に挟まれたマスク
層を少なくとも一層以上設けたことを特徴とする情報の
記録用部材。1. A writable optical disk capable of additional recording and rewriting of information by irradiation with an energy beam, wherein at least one mask layer sandwiched between inorganic layers is provided in addition to a recording film. A member for recording information.
形成されていることを特徴とする請求項１記載の情報の
記録用部材。2. The information recording member according to claim 1, wherein the mask layer is formed between the recording film and the reflective layer.
を特徴とする請求項１または２記載の情報の記録用部
材。3. The information recording member according to claim 1, wherein the mask layer is a layer containing a dye.
層であることを特徴とする請求項１または２記載の情報
の記録用部材。4. The information recording member according to claim 1, wherein the mask layer is an inorganic layer having a melting point of 300 ° C. or lower.
ｂ，Ｂｉ，Ｃｄ，Ｔｅ，およびＳｅのうちの少なくとも
１元素を３０原子％以上含有することを特徴とする請求
項１または２記載の情報の記録用部材。5. The mask layer comprises In, Sn, Pb, S
3. The information recording member according to claim 1, which contains at least one element selected from b, Bi, Cd, Te, and Se in an amount of 30 atomic% or more.
を主成分とする記録膜を用いていることを特徴とする請
求項１乃至５のいずれかに記載の情報の記録用部材。6. Ge-Sb-Te or In-Sb-Te
6. The information recording member according to claim 1, wherein a recording film containing as a main component is used.
加記録や書き換えを行う情報の記録再生方法において、
記録膜に加えて、無機物の層に挾まれた色素を含んだマ
スク層を少なくとも一層以上設けた情報の記録用部材
に、再生パワーと記録パワーとの間のレーザパワー照射
によって、上記色素を含む層の吸収飽和が起こる様に照
射することを特徴とする情報の記録再生方法。7. An information recording / reproducing method for additionally recording or rewriting information by irradiating an energy beam,
In addition to the recording film, a member for recording information having at least one mask layer containing a dye sandwiched between layers of an inorganic material contains the above dye by irradiation with laser power between reproduction power and recording power. A method of recording and reproducing information, which comprises irradiating so that absorption saturation of a layer occurs.
上０.８倍以下であることを特徴とする請求項７記載の
情報の記録再生方法。8. The information recording / reproducing method according to claim 7, wherein the erasing power is not less than 0.5 times and not more than 0.8 times the recording power.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5192155A JPH06111369A (en) | 1992-08-11 | 1993-08-03 | Informaiton recording member and recording and recording method |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4-213956 | 1992-08-11 | ||
| JP21395692 | 1992-08-11 | ||
| JP5192155A JPH06111369A (en) | 1992-08-11 | 1993-08-03 | Informaiton recording member and recording and recording method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH06111369A true JPH06111369A (en) | 1994-04-22 |
Family
ID=26507139
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5192155A Pending JPH06111369A (en) | 1992-08-11 | 1993-08-03 | Informaiton recording member and recording and recording method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH06111369A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0863783A (en) * | 1994-08-26 | 1996-03-08 | Nec Corp | Information recording medium |
| JPH0863782A (en) * | 1994-08-26 | 1996-03-08 | Nec Corp | Information recording medium |
| US6667146B1 (en) * | 1999-08-17 | 2003-12-23 | Sharp Kabushiki Kaisha | Optical recording medium and reproducing method therefor |
-
1993
- 1993-08-03 JP JP5192155A patent/JPH06111369A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0863783A (en) * | 1994-08-26 | 1996-03-08 | Nec Corp | Information recording medium |
| JPH0863782A (en) * | 1994-08-26 | 1996-03-08 | Nec Corp | Information recording medium |
| US6667146B1 (en) * | 1999-08-17 | 2003-12-23 | Sharp Kabushiki Kaisha | Optical recording medium and reproducing method therefor |
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| A02 | Decision of refusal |
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