JPH06105693B2 - Silicon Carbide Jig for Wafer Heat Treatment - Google Patents

Description

Description: TECHNICAL FIELD The present invention relates to a silicon carbide jig for wafer heat treatment, and particularly to a silicon carbide jig for wafer heat treatment used for heat treatment of a semiconductor wafer in a vertical heat treatment furnace. It is about.

[Prior Art] Conventionally, in this type of silicon carbide jig for wafer heat treatment, the jig for wafer heat treatment has a furnace core tube whose outer periphery is deformed by the softening of quartz glass which is the material in the furnace core tube of a vertical heat treatment furnace. It is proposed to prevent an accident that damages the inner peripheral surface of the furnace core tube when contacting the inner peripheral surface of the inner peripheral surface of the furnace or a semiconductor wafer that is laterally mounted falls. Specifically, as shown in FIG. 4, a plurality of ridges for supporting a semiconductor wafer are formed extending in the vertical direction with respect to the inner peripheral surface of the side wall of the semi-cylindrical line and made of silicon carbide. The lower plate-shaped body 30 'is joined to the lower and upper ends of the jig main body 20' by means of joining or fitting.
And the upper plate-shaped body 40 ' had a structure in which they were connected to each other.

[Problems to be Solved] However, in the conventional silicon carbide jig for wafer heat treatment shown in FIG. 4, the length of the furnace core tube of the vertical heat treatment furnace is short, and the furnace core tube is generally made of quartz glass with large radiant heat. Since the temperature gradient in the upper and lower parts of the jig was increased due to the creation of the jig, the jig body 20 ' and the lower plate-shaped body were inserted and removed from the lower opening.
There is a drawback that internal thermal stress is accumulated in 30 ' and upper plate 40' (especially lower plate 30 ' ) and they are destroyed in a relatively short period of time due to thermal shock, that is, thermal expansion or contraction. It was

Therefore, the present invention solves this drawback and provides a silicon carbide jig for wafer heat treatment which prevents damage due to a large temperature gradient near the lower opening of the furnace core tube of a vertical heat treatment furnace. It is a thing.

[Means for Solving Problems] The present invention is for heat treatment of a semiconductor wafer including an upper plate-shaped body and a lower plate-shaped body which are respectively connected to the upper end portion and the lower end portion of a jig body supporting a plurality of semiconductor wafers. In a silicon carbide jig, a silicon carbide jig for heat treatment of a semiconductor wafer, characterized in that at least a lower plate of the upper plate and the lower plate is provided with a slit portion. There is.

[Operation] A silicon carbide jig for wafer heat treatment according to the present invention is provided with at least an upper plate-shaped body and a lower plate-shaped body connected to an upper end portion and a lower end portion of a jig body supporting a semiconductor wafer, respectively. Since the lower plate-like body is provided with slits, it absorbs and relaxes internal thermal stress and prevents damage due to thermal expansion or contraction, which in turn increases the life. I am doing it.

EXAMPLES Next, the present invention will be specifically described with reference to the accompanying drawings.

FIG. 1 is a perspective view showing an embodiment of a silicon carbide jig for wafer heat treatment of the present invention.

FIG. 2 is a partial perspective view of the same and particularly shows the lower plate-shaped body.

FIG. 3 is a perspective view showing the same usage state.

First, the structure of the silicon carbide jig for wafer heat treatment of the present invention will be described in detail. Reference numeral 10 denotes a silicon carbide jig for wafer heat treatment of the present invention, which includes a jig body 20 made of silicon carbide and a jig body 20 made of silicon carbide for joining or fitting to the lower end portion of the jig body 20 . The lower plate-like body 30 connected by an appropriate means and the upper plate-like body 40 made of silicon carbide and connected by an appropriate means such as joining or fitting to the upper end of the jig body 20.
And has a package.

The jig body 20 is formed in a substantially semi-cylindrical shape, and has a plurality of (for example, four) ridges 21a, ..., 21d for supporting the semiconductor wafer to be heat-treated on the inner peripheral surface of the side wall thereof. Are formed to extend in the vertical direction. Between the ridges 21a, ~, 21d, to prevent damage to the jig body 20 due to thermal shock, reduce the weight of the jig body 20 , reduce the heat capacity, and improve the heat distribution, the side walls are formed. An appropriate number of windows 22a, ~ 22
c is formed. Plural wafer support grooves 23a, ..., 23d are bored in the protrusions 21a, ..., 21d, respectively. The wafer supporting grooves 23a, ~, 23d are formed one by one at the same height position with respect to the inner peripheral surfaces of the protrusions 21a, ~, 21d, and semiconductor wafers to be heat-treated (not shown). Is inserted and placed in the lateral direction.

Further, in the lower portion of the jig main body 20 , a slit portion 24 that communicates with any of the window portions 22a, to 22c (here, the window portion 22b) may be formed, whereby the vertical heat treatment furnace 50 Furnace core tube 52
It is possible to absorb and relieve internal thermal stress that occurs during insertion and removal or heating by the heater 53 in the furnace core tube 52, and it is possible to prevent the jig body 20 from being damaged by thermal shock, that is, thermal expansion or thermal contraction.

The lower plate-shaped body 30 is directly connected to the lower portion of the jig body 20 by an appropriate means such as adhesion or fitting.
The plate-like body 31 and the silicon carbide jig 10 for wafer heat treatment of the present invention are inserted into and taken out from the furnace core tube 52 of the vertical heat treatment furnace 50 , or a jig is mounted and rotated to support the furnace core tube 52. Stand 51
A second plate-shaped body 32 for mounting on the table, and first and second plate-shaped bodies
It includes a connecting hollow cylindrical body 33 for connecting 31, 32 to each other. The first and second plate-like bodies 31 and 32 are provided with openings 31a and 32a, respectively, which are connected to the openings at both ends of the internal hollow 33a of the connection hollow cylindrical body 33. Also, the first and second plate-like bodies 3
1, 32 and the connecting hollow cylindrical body 33 are respectively provided with slit portions 31b, 32b, 33b reaching the openings 31a, 32a and the inner hollow 33a from the outer peripheral surface and communicating with each other, and the vertical heat treatment is performed. Internal thermal stress generated when the furnace 50 is inserted into and taken out of the furnace core tube 52 or when the furnace core tube 52 is heated can be absorbed and relaxed, and the lower plate-like body 30 is sufficiently prevented from being damaged by thermal shock, that is, thermal expansion or contraction. it can.

The upper plate 40 is not formed with the openings and slits in the embodiment shown in FIG. 1, but the present invention is not limited to this, and if desired, these can be formed in the same manner as the lower plate 30. You may form. This makes it possible to further prevent the thermal shock of the upper plate-like body 40 , that is, the destruction due to the thermal expansion or the thermal contraction, and at the same time, it is possible to reduce the weight of the silicon carbide jig 10 for wafer heat treatment of the present invention, which is beneficial. Is.

Further, the operation of the silicon carbide jig for wafer heat treatment of the present invention will be described in detail.

After mounting a desired number of semiconductor wafers (not shown) to be heat-treated in the wafer supporting grooves 23a to 23d of the jig body 20 in the lateral direction, the lower plate-shaped member is placed on the jig mounting table 51. 30
To place.

Next, the jig mounting table 51 rises, and the furnace core tube of the vertical heat treatment furnace 50
The silicon carbide jig 10 for wafer heat treatment of the present invention is inserted into the lower portion 52 through the lower opening 52a. At this time the slit part
Since 31b, 32b, 33b are formed, the lower plate-shaped body 30 can absorb and relax internal thermal stress even if it is rapidly heated due to a large temperature gradient inside the furnace core tube 52 of the vertical heat treatment furnace 50 , It is possible to avoid thermal shock and eventually destruction due to thermal expansion. Also the jig body
If the window portions 22a, 22c, and 22c and the slit portion 24 are formed for 20 , it is possible to avoid the thermal shock of the jig body 20 and the destruction due to the thermal expansion, which is preferable. If I is opening and the slit portion (particularly the slit portion) formed with respect to the upper plate body 40 in addition, breakage due to thermal shock and thus thermal expansion of the upper plate body 40 can be prevented, it is more preferred.

Even during the heat treatment of the semiconductor wafer inside the furnace core tube 52, the lower plate-shaped body is formed in the silicon carbide jig 10 for wafer heat treatment of the present invention.
Since the slit portions 31b, 32b, 33b are formed in the 30 , it is possible to prevent thermal destruction of the lower plate-shaped body 30 due to a large temperature gradient at the lower end of the furnace core tube 52. Also, I is the slit portion 24 is formed for the jig body 20, it can be prevented thermal destruction of the jig body 20 due to the large temperature gradient at the lower end of the core tube 52, which is preferable. In addition if I by opening and a slit portion (particularly the slit portion) is formed with respect to the upper plate-like body 40, also to thermal destruction of the upper plate-like body 40 due to the large temperature gradient in the upper portion of the furnace core tube 52 Can be prevented and is more preferable.

Vertical heat treatment furnace50Of the semiconductor wafer inside the furnace core tube 52 of
When the processing is completed, the jig mounting table 51 descends and vertical heat treatment is performed.
Furnace50The wafer of the present invention from the lower opening 52a of the furnace core tube 52 of
Silicon carbide jig for heat treatmentTenTake out. Also when inserting
Similarly to the present invention, the silicon carbide jig for wafer heat treatment of the present inventionTen
Is due to the large temperature gradient at the lower end of the furnace core tube 52.
Partial thermal stress can be absorbed and relaxed, and its thermal destruction can be prevented.

In the above description, the lower plate-shaped body 30 includes the first and second plate-shaped bodies 31 and 32 and the communicating hollow cylindrical body 33, but if desired, this may be the first plate-shaped body. It can be formed with only 31.

Further, the shape of the lower plate-shaped body 30 is annular, but at least one of the outer shape and the opening may be polygonal if desired.

Further, the shape of the upper plate-shaped body 40 is a disk shape, but may be a polygonal shape if desired, and may be a polygonal shape when an opening is also formed.

In addition, although the jig main body 20 is formed in a semi-cylindrical shape, it may be formed simply by a plurality of (for example, four) rods, and a wafer supporting groove may be formed inside each of them.

[Advantages of the Invention] As is apparent from the above, the silicon carbide jig for wafer heat treatment according to the present invention is an upper plate-shaped body connected to the upper end and the lower end of a jig body supporting a semiconductor wafer. Since a slit is formed in at least the lower plate-shaped body of the lower plate-shaped body, (i) application by a large thermal gradient of the furnace core-tube during insertion / extraction to / from the furnace core-tube of the vertical heat treatment furnace. It has the effect of sufficiently absorbing and relaxing the internal thermal stress that is generated, which in turn has the effect of (ii) preventing thermal damage and extending the life of the jig. It has the effect of withstanding long-term use in a furnace core tube made of quartz glass, which has a great influence.

[Brief description of drawings]

FIG. 1 is a perspective view showing an embodiment of the present invention, FIG. 2 is a partial perspective view of the same, FIG. 3 is a perspective view showing the same usage state, and FIG. 4 is a perspective view showing a conventional example. 10 …… Silicon carbide jig for wafer heat treatment 20 …… Jig body 21a, 〜, 21d …… Protrusions 22a, 〜, 22c …… Window 23a, 〜, 23d …… Wafer support groove 24 …… Slit Part 30 ...... Lower plate-like body 31,32 …… Plate-like body 31a, 32a …… Opening 31b, 32b, 33b …… Slit part 33 …… Coupling hollow cylinder 33a …… Inner hollow 40 …… Upper plate-like body Body 50 …… Vertical heat treatment furnace 51 …… Jig stand 52 …… Furnace core tube 52a …… Lower opening

Claims (1)

[Claims] 1. A silicon carbide jig for heat treatment of a semiconductor wafer, which comprises an upper plate and a lower plate which are respectively connected to the upper end and the lower end of a jig body for supporting a plurality of semiconductor wafers. A silicon carbide jig for heat treatment of a semiconductor wafer, wherein at least a lower plate-shaped member of the upper plate-shaped member and the lower plate-shaped member is provided with a slit portion.