JPH06104297A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPH06104297A
JPH06104297A JP25248892A JP25248892A JPH06104297A JP H06104297 A JPH06104297 A JP H06104297A JP 25248892 A JP25248892 A JP 25248892A JP 25248892 A JP25248892 A JP 25248892A JP H06104297 A JPH06104297 A JP H06104297A
Authority
JP
Japan
Prior art keywords
adhesive resin
semiconductor
wafer
cut
semiconductor wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP25248892A
Other languages
Japanese (ja)
Other versions
JP2803805B2 (en
Inventor
Satoshi Suizu
智 水頭
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP25248892A priority Critical patent/JP2803805B2/en
Publication of JPH06104297A publication Critical patent/JPH06104297A/en
Application granted granted Critical
Publication of JP2803805B2 publication Critical patent/JP2803805B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Abstract

PURPOSE:To attach adhesive resin on the entire back face of a semiconductor chip and to secure a complete adhesion by applying the film-like orientable adhesive resin to the back face of a semiconductor wafer and by cutting the oriented adhesive resin accurately at partitioning places. CONSTITUTION:Orientable adhesive resin 5 is applied to a semiconductor wafer 1 and then the semiconductor wafer is diced to divide it into discrete semiconductor chips 1a. By using such material as liquid crystal polymer and thermoplastic resin for the orientable adhesive resin 5, the orientable adhesive resin can easily be applied and oriented vertically to the semiconductor wafer 1. When dividing the wafer into the discrete semiconductor chips 1a, a dicing saw 6 is used and the wafer 1 is cut from a front surface. At that time, the wafer 1 is cut until midway in the depth. The cutting depth is such that while the wafer 1 is cut by the dicing saw 6, the semiconductor chips 1a are kept in a body without being separated.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は半導体ウェハーから分割
した半導体チップをリードフレームに接続させる方法に
特徴を有する半導体装置の製造方法に関するものであ
る。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a semiconductor device characterized by a method of connecting a semiconductor chip divided from a semiconductor wafer to a lead frame.

【0002】[0002]

【従来の技術】半導体チップをリードフレームに接続さ
せる方法に接着性樹脂を用いる方法がある。そして、こ
の接着性樹脂を使う方法として次の3種類がある。
2. Description of the Related Art As a method of connecting a semiconductor chip to a lead frame, there is a method of using an adhesive resin. Then, there are the following three types of methods of using this adhesive resin.

【0003】第一には、有機溶剤などで溶かした液状の
前記接着性樹脂を微細なノズルで、リードフレーム上の
半導体チップが搭載される部分に塗布した後、半導体チ
ップを置き、接着性樹脂を硬化させる方法である。
First, after applying the liquid adhesive resin dissolved in an organic solvent or the like to a portion of the lead frame on which the semiconductor chip is mounted, the semiconductor chip is placed and then the adhesive resin is applied. Is a method of curing.

【0004】第二には、有機溶剤を使わず半硬化状態の
フィルム状にした前記接着性樹脂を、搭載する半導体チ
ップの大きさに切断し、そのフィルムをリードフレーム
上に置き、その上に半導体チップを載せ、加熱すること
で接着性樹脂を溶融、硬化させ、接続させるものであ
る。
Secondly, the adhesive resin in the form of a semi-cured film without using an organic solvent is cut into the size of a semiconductor chip to be mounted, the film is placed on a lead frame, and the film is placed on the lead frame. A semiconductor chip is placed and heated to melt and cure the adhesive resin, and the adhesive resin is connected.

【0005】そして第三の方法として、半導体ウェハー
にフィルム状の接着性樹脂を貼り付け、その後に半導体
チップに切断する方法がある。以下、この第三の方法に
ついて図面を参照しながら説明する。図3は従来の半導
体装置の製造方法として、樹脂フィルムをウェハーに貼
付し、ダイシング後に突き上げピンにより突き上げてチ
ップ状態に分割している状態を示す断面図である。以
下、その動作について説明する。
As a third method, there is a method in which a film-shaped adhesive resin is attached to a semiconductor wafer and then cut into semiconductor chips. The third method will be described below with reference to the drawings. FIG. 3 is a cross-sectional view showing a conventional semiconductor device manufacturing method in which a resin film is attached to a wafer and, after dicing, is pushed up by push-up pins to be divided into chips. The operation will be described below.

【0006】まずダイシングによって半導体ウェハー1
に切込みを入れる前に、フィルム状の接着性樹脂2を半
導体ウェハー1裏面に貼り付ける。次に半導体チップ1
aに切断する際に突き上げピン3で突き上げて同時に接
着性樹脂2をも切断する。そして吸着コレット4に半導
体チップ1aを吸着し、前記半導体チップ1aをリード
フレームに載せ、加熱し、接着性樹脂を溶融、硬化させ
るものである。
First, the semiconductor wafer 1 is diced.
Before making a notch, a film-like adhesive resin 2 is attached to the back surface of the semiconductor wafer 1. Next, semiconductor chip 1
When cut into a, the push-up pin 3 pushes up and the adhesive resin 2 is cut at the same time. Then, the semiconductor chip 1a is adsorbed on the adsorption collet 4, the semiconductor chip 1a is placed on a lead frame, and heated to melt and cure the adhesive resin.

【0007】[0007]

【発明が解決しようとする課題】しかしながら、前記従
来の方法では以下のような課題がある。
However, the above-mentioned conventional method has the following problems.

【0008】従来の第一の方法である液状の接着性樹脂
をノズルでリードフレームに塗布する方法は、半導体チ
ップ裏面全面を濡らすには、ノズル形状など工夫が必要
であり、特に半導体チップの大きさが変わった場合、そ
れぞれにノズルを準備する方法がある。また、加熱硬化
する際、含まれている有機溶剤が気化蒸発し、その内部
に空洞を生じさせる場合がある。
In the first conventional method of applying a liquid adhesive resin to a lead frame with a nozzle, in order to wet the entire back surface of the semiconductor chip, it is necessary to devise a nozzle shape or the like. There is a method of preparing a nozzle for each when the size changes. In addition, when heat-cured, the contained organic solvent may evaporate and evaporate, which may cause voids inside.

【0009】従来の第二の方法である半導体チップの大
きさに切断したフィルム状の接着性樹脂を、リードフレ
ーム上に載せる方法は、正確にその位置に載せることが
難しく、位置ずれを起こしやすい。
The second conventional method, in which a film-shaped adhesive resin cut to the size of a semiconductor chip is placed on a lead frame, is difficult to be placed accurately at that position, and a positional shift easily occurs. .

【0010】従来の第三の方法である半導体ウェハーに
フィルム状の接着性樹脂を貼り付け、その後に半導体チ
ップに切断する方法は、前記第二に示した方法の欠点を
補うもので、半導体チップ1aと接着性樹脂2との位置
ずれの心配がない。また、フィルム状の接着性樹脂2に
は有機溶剤が含まれておらず、その内部に空洞が生じる
ことがない。ただしこの第三の方法は、フィルム状の接
着性樹脂2を貼り付けた半導体ウェハー1を分割して半
導体チップ1aに切断する際、そのフィルム状の接着性
樹脂2まで切断する必要がある。接着性樹脂2まで切断
せず、半導体ウェハー1の途中までの切断で終わると、
以後の半導体チップ1aに分割する際に、図3に示すよ
うに、個々の半導体チップ1aに着くべき接着性樹脂2
が剥がれ、リードフレーム接続の際に密着性が確保でき
なくなる。または、一つの半導体チップ1aに、隣接す
る半導体チップ1aに接着されるべき接着性樹脂2の一
部が過剰に残ることがある。しかし、接着性樹脂2まで
切断すると、切断する刃(ダイシングブレード)にフィ
ルム状の接着性樹脂2が付着し、前記切断する刃が接着
性樹脂により目づまりを起こし作業性を著しく低下させ
るといった課題があった。
The third conventional method, in which a film-like adhesive resin is attached to a semiconductor wafer and then cut into semiconductor chips, compensates for the drawbacks of the second method. There is no fear of misalignment between 1a and the adhesive resin 2. In addition, the film-like adhesive resin 2 does not contain an organic solvent, and thus voids do not occur therein. However, in the third method, when the semiconductor wafer 1 to which the film-shaped adhesive resin 2 is attached is divided and cut into the semiconductor chips 1a, it is necessary to cut the film-shaped adhesive resin 2 as well. If the adhesive resin 2 is not cut and the semiconductor wafer 1 is cut halfway,
When the semiconductor chip 1a is divided thereafter, as shown in FIG. 3, the adhesive resin 2 to be attached to each semiconductor chip 1a
Peeled off, and the adhesion cannot be secured when connecting the lead frame. Alternatively, a part of the adhesive resin 2 to be bonded to the adjacent semiconductor chip 1a may remain excessively on one semiconductor chip 1a. However, when the adhesive resin 2 is cut, there is a problem that the film-shaped adhesive resin 2 adheres to the cutting blade (dicing blade), and the cutting blade causes clogging due to the adhesive resin to significantly reduce workability. there were.

【0011】[0011]

【課題を解決するための手段】本発明は前記課題を解決
するもので、以下のような構成を有している。すなわ
ち、半導体ウェハーに対し垂直方向に配向するフィルム
状の配向性接着樹脂を前記半導体ウェハー裏面に貼付す
る工程と、半導体チップの大きさに従って前記半導体ウ
ェハーの途中まで切り込みを入れる工程と、半導体チッ
プ分割と同時に前記フィルム状の配向性接着樹脂を割っ
てチップ状態にする工程と、前記フィルム状の配向性接
着樹脂を有した半導体チップをリードフレームに接続す
る工程とを有することを特徴とする。
The present invention solves the above problems and has the following configuration. That is, a step of sticking a film-shaped orienting adhesive resin oriented vertically to a semiconductor wafer on the back surface of the semiconductor wafer, a step of making a cut in the middle of the semiconductor wafer according to the size of the semiconductor chip, and a semiconductor chip division At the same time, the method is characterized by including a step of breaking the film-like oriented adhesive resin into a chip state and a step of connecting a semiconductor chip having the film-like oriented adhesive resin to a lead frame.

【0012】[0012]

【作用】本発明は前記構成によって、半導体ウェハー裏
面に貼付したフィルム状の配向性接着樹脂によって、従
来のチップ分割方法を用いても、分割箇所から正確に配
向性接着樹脂が切断され、半導体チップ裏面全体に接着
性樹脂が確保されるため、前記半導体チップをリードフ
レームに接続する場合、完全な密着性を容易に確保でき
る。
According to the present invention, with the above-described structure, the film-shaped orienting adhesive resin attached to the back surface of the semiconductor wafer can accurately cut the orienting adhesive resin from the dividing points even if the conventional chip dividing method is used. Since the adhesive resin is secured on the entire back surface, perfect adhesion can be easily secured when the semiconductor chip is connected to the lead frame.

【0013】[0013]

【実施例】以下、本発明の一実施例について図1、図2
を参照しながら説明する。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT An embodiment of the present invention will be described below with reference to FIGS.
Will be described with reference to.

【0014】図1は本実施例の一工程を示す断面図であ
る。図1は配向性接着樹脂5を半導体ウェハー1に貼り
つけ、個々の半導体チップ1aに分割するためのダイシ
ングをしている状態を示している。前記配向性接着樹脂
5は、液晶ポリマーや熱可塑性樹脂のような材料を用い
ることで、簡単に半導体ウェハー1に対し垂直に配向す
る状態で貼りつけることができる。その後、個々の半導
体チップ1aに分割するための切断は、ダイシングソー
6を用いて、半導体ウェハー1の表面から切り込みを入
れる。この時、切り込みの深さは、半導体ウェハー1の
途中までとし、切込みの深さはダイシングソー6により
半導体ウェハー1の切断中に半導体チップ1aがバラバ
ラにならないように保持される深さである。決して配向
性接着樹脂5までは切込まない。半導体ウェハー1の厚
みが600μm程度であれば、切込みの深さは500μ
m程度で、約90%の切込みでよい。
FIG. 1 is a sectional view showing one step of this embodiment. FIG. 1 shows a state in which the orienting adhesive resin 5 is attached to the semiconductor wafer 1 and is diced to divide it into individual semiconductor chips 1a. By using a material such as a liquid crystal polymer or a thermoplastic resin for the orientation adhesive resin 5, it is possible to easily attach the orientation adhesive resin 5 in a state of being oriented vertically to the semiconductor wafer 1. After that, the dicing saw 6 is used to cut into individual semiconductor chips 1 a by making cuts from the surface of the semiconductor wafer 1. At this time, the depth of the cut is set to the middle of the semiconductor wafer 1, and the depth of the cut is a depth which is held by the dicing saw 6 so that the semiconductor chips 1a are not separated during the cutting of the semiconductor wafer 1. Never cut into the oriented adhesive resin 5. If the thickness of the semiconductor wafer 1 is about 600 μm, the depth of cut is 500 μm.
A depth of about 90% may be achieved in about m.

【0015】次に図2は本実施例の一工程を示す断面図
であり、図1の状態で切込みを入れた半導体ウェハー1
を個々の半導体チップ1aに分割し外している状態を示
している。半導体ウェハー1の途中まで切込みを入れた
状態で、突き上げピン3で半導体チップ1aを突き上げ
る。その際、半導体ウェハー1はチップ状態に分割され
る。同時に、半導体ウェハー1に接着している配向性接
着樹脂5は、その配向性から、半導体チップ1aが分割
される部分から垂直に切断される。このため、各半導体
チップ1aに対し、完全に接着剤が確保される。その
後、吸着コレット4に半導体チップ1aを吸着し、搭載
するリードフレーム上で加熱溶融させ接着させる。
Next, FIG. 2 is a cross-sectional view showing one step of this embodiment, in which a semiconductor wafer 1 having a cut in the state of FIG.
Shows a state in which is divided into individual semiconductor chips 1a and removed. The semiconductor chip 1a is pushed up by the push-up pins 3 in a state where a cut is made in the semiconductor wafer 1 partway. At that time, the semiconductor wafer 1 is divided into chips. At the same time, the orientation adhesive resin 5 adhered to the semiconductor wafer 1 is vertically cut from the portion where the semiconductor chip 1a is divided due to its orientation. Therefore, the adhesive is completely secured for each semiconductor chip 1a. After that, the semiconductor chip 1a is adsorbed to the adsorption collet 4 and heated and melted on the mounted lead frame to be adhered.

【0016】[0016]

【発明の効果】本発明によれば、半導体チップのリード
フレームへの接続において、全ての半導体チップの密着
性を向上させると同時に、製造時においても、従来と同
等のチップ分割方法が使えるため、実用上きわめて有効
である。
According to the present invention, in the connection of the semiconductor chip to the lead frame, the adhesion of all the semiconductor chips is improved, and at the same time, the same chip dividing method as the conventional one can be used at the time of manufacturing. It is extremely effective in practice.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の一実施例に係る半導体装置の製造方法
の一工程を示す断面図
FIG. 1 is a sectional view showing a step of a method of manufacturing a semiconductor device according to an embodiment of the present invention.

【図2】本発明の一実施例に係る半導体装置の製造方法
の一工程を示す断面図
FIG. 2 is a cross-sectional view showing a step in a method of manufacturing a semiconductor device according to an embodiment of the present invention.

【図3】従来の半導体装置の製造方法における樹脂フィ
ルムをウェハーに貼付し、チップ状態に分割している状
態を示す断面図
FIG. 3 is a cross-sectional view showing a state in which a resin film is attached to a wafer and divided into chips in a conventional method for manufacturing a semiconductor device.

【符号の説明】[Explanation of symbols]

1 半導体ウェハー 1a 半導体チップ 2 接着性樹脂 3 突き上げピン 4 吸着コレット 5 配向性接着樹脂 6 ダイシングソー 1 Semiconductor Wafer 1a Semiconductor Chip 2 Adhesive Resin 3 Push-up Pin 4 Adsorption Collet 5 Oriented Adhesive Resin 6 Dicing Saw

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】半導体ウェハーに対し垂直方向に配向する
フィルム状の配向性接着樹脂を前記半導体ウェハー裏面
に貼付する工程と、半導体チップの大きさに従って前記
半導体ウェハーの途中まで切り込みを入れる工程と、半
導体チップ分割と同時に前記フィルム状の配向性接着樹
脂を割ってチップ状態にする工程と、前記フィルム状の
配向性接着樹脂を有した半導体チップをリードフレーム
に接続する工程とを有することを特徴とする半導体装置
の製造方法。
1. A step of adhering a film-shaped orienting adhesive resin oriented vertically to a semiconductor wafer on the back surface of the semiconductor wafer, and a step of making a cut in the middle of the semiconductor wafer according to the size of a semiconductor chip, A step of splitting the film-shaped orientation adhesive resin into a chip state at the same time as dividing the semiconductor chip, and connecting a semiconductor chip having the film-shaped orientation adhesive resin to a lead frame. Of manufacturing a semiconductor device.
JP25248892A 1992-09-22 1992-09-22 Method for manufacturing semiconductor device Expired - Fee Related JP2803805B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP25248892A JP2803805B2 (en) 1992-09-22 1992-09-22 Method for manufacturing semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP25248892A JP2803805B2 (en) 1992-09-22 1992-09-22 Method for manufacturing semiconductor device

Publications (2)

Publication Number Publication Date
JPH06104297A true JPH06104297A (en) 1994-04-15
JP2803805B2 JP2803805B2 (en) 1998-09-24

Family

ID=17238074

Family Applications (1)

Application Number Title Priority Date Filing Date
JP25248892A Expired - Fee Related JP2803805B2 (en) 1992-09-22 1992-09-22 Method for manufacturing semiconductor device

Country Status (1)

Country Link
JP (1) JP2803805B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11307686A (en) * 1998-04-27 1999-11-05 Kuraray Co Ltd Printed circuit device mounted with semiconductor circuit device
JP2005260204A (en) * 2004-02-10 2005-09-22 Lintec Corp Manufacturing method of semiconductor device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10432168B2 (en) 2015-08-31 2019-10-01 General Electric Company Systems and methods for quartz wafer bonding

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11307686A (en) * 1998-04-27 1999-11-05 Kuraray Co Ltd Printed circuit device mounted with semiconductor circuit device
JP2005260204A (en) * 2004-02-10 2005-09-22 Lintec Corp Manufacturing method of semiconductor device

Also Published As

Publication number Publication date
JP2803805B2 (en) 1998-09-24

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