JPH06104211A - Processing equipment - Google Patents

Abstract

PURPOSE:To reduce the damage of a semiconductor device material caused by charged particles, and to enable improvement in uniformity in the surface of a sample to be processed and the increase of the diameter of the sample to be processed in processing equipment of a semiconductor device material. CONSTITUTION:Both a plasma source 11 for supplying neutral corpuscular rays and a plasma source 12 for supplying reactive excitation atoms or molecules are formed by a single cylindrical discharge tube 1, and both these plasma sources are formed so as to be arranged on the same line in front of a sample to be processed 8. Accordingly, the cost of a device can be reduced because both the plasma source 11 and the plasma source 12 are formed of the single discharge tube, and each particle is uniformly incident on the surface of the sample to be processed and the uniformity of processing in the surface of the sample to be processed is improved because both plasma sources are disposed on the same line in front of the sample to be processed.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a processing device for semiconductor device materials, and particularly to a processing device for etching semiconductor device materials.

[0002]

2. Description of the Related Art When etching an insulating film such as a silicon oxide film among semiconductor device materials, a sample to be processed is placed in a plasma of a reactive gas, and a high frequency bias is applied to the sample to be processed to form a plasma. Ions were accelerated by accelerating the ions from the inside and injecting them into the sample to be processed. However, this etching has a problem that a large amount of charged particles are incident and the insulating film which is the material to be processed is deteriorated.

In order to solve the above problem, a neutral atom or molecule having a high reactivity with a high-speed neutral particle is supplied onto the surface to be processed, and the reaction between the highly reactive atom or molecule and the surface of the sample to be processed is performed. There is a method of etching that is promoted by high-speed neutral particles (reference: JAP Series 4 Proceeding of 1990 International Micro Process Conference 166).
Pp.-168 "JJAP Series 4 Proc.
of 1990 Intern. MicroProce
ss Conference pp. 166-16
8). However, with this etching means using neutral particles, it is necessary to separately configure two plasma sources for supplying neutral particles and a plasma source for supplying highly reactive atoms or molecules although the damage is low. However, there was a problem in the uniformity of processing accuracy due to the arrangement of the two plasma sources with respect to the sample to be processed.

[0004]

SUMMARY OF THE INVENTION An object of the present invention is to solve the problems described above (prior art), that is, damage and uniformity of processing accuracy, and to achieve low damage and large diameter at the same time. Is to realize a processing apparatus for uniformly processing a sample to be processed, further simplify the configuration of the processing apparatus, and realize reduction of the apparatus cost.

[0005]

In order to achieve the above object, the processing apparatus of the present invention comprises first means for supplying atoms or molecules in an excited state to a sample to be processed, and the atoms or molecules in the excited state. A second means for generating an ion or neutral particle beam for promoting a chemical reaction with the processed sample, and the first means, the second generation means and the processed sample are arranged on the same line.

The first means is a plasma source for supplying highly reactive atoms or molecules, and the second means is a plasma source for supplying neutral particles or ion beams. Arranging the means and the sample to be processed on the same line means that the main surface of the first and second means for generating plasma faces the surface to be processed of the sample to be processed.

[0007]

[Function] By arranging a plasma source for supplying neutral particles or ion beams and a plasma source for supplying highly reactive atoms or molecules on the same line with respect to the sample to be processed, it is possible to react with neutral particles or ion beams. It is possible to supply both atoms and molecules having a high degree from above the sample surface to be processed, and it is possible to realize highly uniform processing. Further, since each plasma source is formed in a single discharge tube, the apparatus cost can be reduced, and at the same time, it becomes easy to deal with the increase in the diameter of the sample to be processed.

[0008]

Embodiments of the present invention will be described with reference to the drawings. FIG. 1 is a block diagram showing the configuration of an embodiment of a processing apparatus according to the present invention. In this embodiment, a chemical reaction on the surface of the sample to be processed is promoted by the neutral particle beam to perform etching. A multi-aperture electrode 2 for extracting ions is provided in the center of a cylindrical discharge tube 1 having a bell-shaped bell made of quartz, one opening and the other closed.
A metal waveguide 3 is installed around the discharge tube 1 so as to concentrically surround the entire discharge tube 1. The electromagnetic wave 5 from the electromagnetic wave generation source 4 propagates through the waveguide 3 and is supplied to the discharge tube 1. A material gas inlet 6 is installed in the discharge tube 1 so that the material gas can be supplied into the discharge tube 1.
For example, when the sample to be processed is SiO ₂ , a mixture of CHF ₃ gas and Ar gas is supplied.

An electromagnet 7 is installed around the outside of the waveguide 3, and a plasma of the raw material gas is formed in the discharge tube 1 by the synergistic action of the magnetic field and the electromagnetic wave by the electromagnet 7. Effective frequencies of the above electromagnetic waves are from 500MHz to 3G
It is in the range of Hz. A sample to be processed 8 is installed under the opening of the discharge tube 1, and a charge removing electrode 9 for removing charged particles from plasma is installed on the surface of the sample to be processed 8 facing the discharge tube 1 side. ing. The inside of the discharge tube 1 and the sample chamber 10 in which the sample 8 is installed are evacuated by an exhaust mechanism.

The operation of the processing apparatus shown in FIG. 1 will be described. Electromagnetic waves 5 are supplied to the discharge tube 1 from above the discharge tube. The electromagnetic wave 5 penetrates into the interior of the discharge tube 1 from the upper part of the discharge tube 1 and forms a plasma 11 for extracting an ion beam and propagates between the outer side surface of the discharge tube 1 and the waveguide 3 and near the opening of the discharge tube 1. From the side surface of the above to form a plasma 12 for forming reactive excited atoms or molecules by penetrating into the discharge tube. A shield 13 formed of a conductor is installed on a part of the outer side surface of the discharge tube 1 to facilitate the supply of electromagnetic waves to the plasma 12 for forming reactive excited atoms or molecules. When an electric field is applied to the ion beam extracting plasma 11 by the multi-aperture electrode 2, the ion beam is extracted from the ion beam extracting plasma 11.

The extracted ion beam causes a charge exchange reaction with neutral atoms or molecules while passing through the plasma region 12 for forming reactive excited atoms or molecules, and becomes a neutral particle beam, which is irradiated to the sample 8 to be processed. . The ion beam that has not become a neutral particle beam is blocked by the charge removing electrode 9 and cannot reach the sample 8 to be processed. Neutral excited atoms or molecules formed in the plasma 12 region for forming reactive excited atoms or molecules are also supplied to the sample 8 to be processed, and the chemical reaction between the excited atoms or molecules and the sample 8 to be processed is described above. The attractive particle beam promotes etching. Ions and electrons formed in the plasma 12 for forming reactively excited atoms or molecules are blocked by the charge removing electrode 9 and do not reach the sample 8 to be processed.

As described above, since only neutral particles are incident on the sample 8 to be processed, it is possible to realize particularly low damage processing such as processing of the insulating film. Further, since both the neutral particle beam and the supply source of the reactive excited atoms or molecules are located at positions facing the front surface of the sample to be processed, each particle is uniformly supplied to the sample to be processed 8 The above processing is also uniform.

By controlling the current flowing through the electromagnet 7 and the electromagnetic wave adjusting attenuator 14, it is possible to adjust the states of the ion beam drawing plasma 11 and the reactive excited atom or molecule forming plasma 12, respectively. .

FIG. 2 is a block diagram showing the configuration of the second embodiment of the processing apparatus according to the present invention. In FIG. 2, the same parts as those in the embodiment of FIG. 1 are designated by the same reference numerals and the description thereof will be omitted. The present embodiment has an apparatus configuration in which the plasma 11 for extracting ion beams and the plasma 12 for forming reactive excited atoms or molecules are formed by their own electromagnetic wave sources 15 and 16. Although the apparatus cost is disadvantageous because two electromagnetic wave sources are used as compared with the configuration of FIG. 1, when it is desired to individually adjust the states of the plasma 11 for extracting the ion beam and the plasma 12 for forming reactive excited atoms or molecules, There is an advantage that the adjustment range is wider than the configuration of FIG.

FIG. 3 is a block diagram showing the configuration of a third embodiment of the processing apparatus according to the present invention. In FIG. 3, the same parts as those in the embodiment of FIG. 1 are designated by the same reference numerals and the description thereof will be omitted. In this embodiment, a plasma 11 for extracting an ion beam is formed by a synergistic effect of an electromagnetic wave and a magnetic field, and the reactive excited atom or molecule forming plasma 12 shown in FIG. 1 is applied with a high frequency of a high frequency power source 17 to a high frequency coil 18. It is formed by a high frequency electric field.

FIG. 4 is a block diagram showing the configuration of the fourth embodiment of the processing apparatus according to the present invention. In FIG.
The same parts as those in the embodiment of FIG. This embodiment is similar in configuration to the embodiment of FIG. 3, but is formed by applying a high-frequency electric field with a high-frequency power source 20 in which a plasma 12 for forming reactive excited atoms or molecules is applied between two electrodes 19. It is a device configuration.

[0017]

According to the present invention, since both the neutral particle beam and the reactive excited atoms or molecules to be supplied to the sample to be processed can be supplied from the front surface of the sample to be processed, highly uniform processing is possible, and a single process is possible. Since the plasma for supplying the neutral particle beam and the plasma for supplying the reactive excited atoms or molecules are formed by the discharge tube of No. 3, the apparatus cost can be reduced, and it becomes easy to cope with the increase in the diameter of the sample to be processed.

[Brief description of drawings]

FIG. 1 is a block diagram showing the configuration of an embodiment of a processing apparatus according to the present invention.

FIG. 2 is a block diagram showing the configuration of a second embodiment of a processing apparatus according to the present invention.

FIG. 3 is a block diagram showing the configuration of a second embodiment of a processing apparatus according to the present invention.

FIG. 4 is a block diagram showing the configuration of a second embodiment of a processing apparatus according to the present invention.

[Explanation of symbols]

1 ... Discharge tube, 2 ... Multi-aper
Cha electrode, 3 ... Waveguide, 4 ... Electromagnetic wave generation source, 5 ... Electromagnetic wave, 6 ...
Raw material gas inlet, 7 ... electromagnet,
8: sample to be processed, 9: charge removal electrode,
10 ... Sample chamber to be processed, 11 ... Plasma for extracting ion beam,
12 ... Reactively excited atomic plasma, 13 ... Shield,
14 ... Attenuator for electromagnetic wave adjustment,
15 ... Electromagnetic wave source A, 16 ... Electromagnetic wave source B, 17 ... High frequency power supply, 18 ... High frequency coil, 19 ... Electrode, 20 ... High frequency power supply.

Claims (19)

[Claims] 1. A first means for supplying atoms or molecules in an excited state to a sample to be processed, and an ion or neutral particle beam for promoting a chemical reaction between the atoms or molecules in the excited state and the sample to be processed. Generating second means, and the first means and the second means.
A processing apparatus characterized in that the raw means and the sample to be processed are arranged on the same line. 2. The processing apparatus according to claim 1, wherein the first means is a means for bringing a gas containing a target chemical species into a plasma state. 3. The processing apparatus according to claim 1, wherein the second means is configured to generate an ion beam by converting gas into plasma and extracting ion species from the plasma with an electric field by an electrode by an electrode. apparatus. 4. The processing apparatus according to claim 1, wherein the second means forms a gas into plasma and forms an ion beam by extracting ionic species from the plasma with an electric field by an electrode by an electrode,
A processing apparatus characterized in that the ion beam causes a charge exchange reaction with surrounding neutral atoms (or molecules) to generate a neutral particle beam. 5. The processing apparatus according to claim 1, wherein the first means, the second means and the sample to be processed are arranged on the same line in the order of the second means, the first means and the sample to be processed. A processing device characterized by being arranged. 6. The processing apparatus according to claim 1, wherein when the second means generates a neutral particle beam, a plurality of sheets for removing charged particles are provided on the front surface of the sample to be processed on the side of the second means. A processing device in which a mesh-shaped electrode group is installed. 7. The processing apparatus according to claim 2, 3 or 4, wherein the means for bringing the gas into a plasma state is formed into a plasma state by a synergistic action of an electromagnetic wave and a magnetic field in a cylindrical discharge tube formed of an insulator. A processing device having a configuration of. 8. The processing apparatus according to claim 3 or 4,
The first means is a means for bringing a gas containing a target chemical species into a plasma state, and the plasma of the first means and the second means is formed in a single discharge tube. Processing equipment. 9. A processing apparatus according to claim 8, wherein the discharge tube is internally divided into an ion or neutral particle beam generating plasma source and an excited state atom or molecule forming plasma source by the electrode according to claim 3. A processing device characterized by the above. 10. The processing apparatus according to claim 7, 8 or 9, wherein the means for supplying an electromagnetic wave to the discharge tube is a waveguide from an electromagnetic wave generation source. 11. The processing apparatus according to claim 7, 8 or 9, wherein the cylindrical discharge tube is covered with the waveguide according to claim 10 except for its opening, and a single electromagnetic wave source is provided. And a plasma region according to claim 2 and a waveguide,
4. A processing apparatus, which supplies an electromagnetic wave to both plasma regions according to 4. 12. The machining apparatus according to claim 7, 8 or 9, wherein an electromagnet for adjusting a magnetic field distribution inside said cylindrical discharge tube is arranged around said bell-shaped discharge tube. Characteristic processing equipment. 13. The processing apparatus according to claim 2, wherein the means for bringing into the plasma state is formed by applying a high frequency electric field to a coiled electrode. 14. The processing apparatus according to claim 2, wherein the means for bringing into the plasma state is formed by applying a high-frequency electric field between two electrodes. 15. The processing apparatus according to claim 7, 8 or 9, wherein a part of the outer side of the cylindrical discharge tube is covered with a conductor. 16. The processing apparatus according to claim 7, wherein the electromagnetic wave has a frequency between 500 MHz and 3 GHz. 17. The processing apparatus according to claim 7, 8 or 9, wherein the discharge tube is made of quartz. 18. The processing apparatus according to claim 7, 8 or 9, wherein the discharge tube is made of an oxide of aluminum. 19. A plasma source according to claim 2 and claim 3,
The plasma source described in 4 is a processing apparatus characterized in that each is formed by a unique electromagnetic wave generating means.