JPH06103545B2 - Information recording medium - Google Patents

Information recording medium

Info

Publication number
JPH06103545B2
JPH06103545B2 JP60295539A JP29553985A JPH06103545B2 JP H06103545 B2 JPH06103545 B2 JP H06103545B2 JP 60295539 A JP60295539 A JP 60295539A JP 29553985 A JP29553985 A JP 29553985A JP H06103545 B2 JPH06103545 B2 JP H06103545B2
Authority
JP
Japan
Prior art keywords
layer
recording
reflective layer
recording medium
information recording
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60295539A
Other languages
Japanese (ja)
Other versions
JPS62154245A (en
Inventor
一美 板垣
勲 森本
晃一 森
Original Assignee
旭化成工業株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 旭化成工業株式会社 filed Critical 旭化成工業株式会社
Priority to JP60295539A priority Critical patent/JPH06103545B2/en
Publication of JPS62154245A publication Critical patent/JPS62154245A/en
Publication of JPH06103545B2 publication Critical patent/JPH06103545B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Description

【発明の詳細な説明】 産業上の利用分野 本発明は新規な情報記録媒体に関するものである。さら
に詳しくいえば、本発明は、基板上に設けられた記録層
にレーザー光のような活性光を照射し、照射部分の反射
率変化を利用して情報記録するための媒体において、特
に長期安定性に優れた情報記録媒体に関するものであ
る。
TECHNICAL FIELD The present invention relates to a novel information recording medium. More specifically, the present invention relates to a medium for recording information by irradiating a recording layer provided on a substrate with active light such as laser light and recording information by utilizing the change in reflectance of the irradiated portion. The present invention relates to an information recording medium having excellent properties.

従来の技術 これまで、記録可能な情報記録媒体としては、基板上に
所定の記録材を設け、レーザー光を照射して、情報に応
じた孔を形成させる方式のものと、レーザー光照射によ
り光学特性を変化させ、この光学特性の変化によつて生
じる反射率の変化を利用する方式のものなどが知られて
いる。
2. Description of the Related Art Hitherto, as recordable information recording media, a recording medium is provided on a substrate and a laser beam is irradiated to form holes corresponding to information. There is known a system in which characteristics are changed and a change in reflectance caused by the change in optical characteristics is used.

後者の光学特性の変化を利用する方式は、孔を形成させ
る方式に比べて、記録層の溶融、分散あるいは蒸発とい
う過程を必要としないために、記録ピツトの形状を制御
することが容易であるという利点を有している。
The latter method utilizing changes in optical characteristics does not require the process of melting, dispersing or evaporating the recording layer, as compared with the method of forming holes, and therefore the shape of the recording pit can be controlled easily. It has the advantage of

ところで、この方式の情報記録媒体においては、レーザ
ー光により記録させる部分と未記録部分との反射率に関
係するコントラストを向上させるために、記録層に反射
層を積層して2層構造とすることがよく行われている。
By the way, in this type of information recording medium, in order to improve the contrast relating to the reflectance between the portion to be recorded by the laser beam and the unrecorded portion, a reflective layer is laminated on the recording layer to form a two-layer structure. Is often done.

しかしながら、記録層に反射層を積層した情報記録媒体
においては、記録層に含有される元素が高温、高湿条件
下で反射層内に徐々に移動し、該記録媒体の反射率や感
度などの諸特性が悪影響を受けるという実用上の問題が
あつた。
However, in the information recording medium in which the reflective layer is laminated on the recording layer, the element contained in the recording layer gradually moves into the reflective layer under high temperature and high humidity conditions, and the reflectance and sensitivity of the recording medium are reduced. There was a practical problem that various characteristics were adversely affected.

単一元素あるいは多元素から構成される記録層と反射層
とを有する積層構造では、熱による拡散あるいは湿度に
よる電気化学的な作用によつて、元素の移動が起きる可
能性が高く、高温高湿雰囲気下に長時間放置した場合、
上記記録媒体作製直後に対し記録層及び反射層の組成に
変化が生じ、反射率をはじめとする諸特性に大きな影響
を与えることは免れなかつた。
In a laminated structure having a recording layer composed of a single element or multiple elements and a reflective layer, element migration is likely to occur due to diffusion due to heat or electrochemical action due to humidity. If left in the atmosphere for a long time,
It was unavoidable that the composition of the recording layer and the reflective layer changed immediately after the recording medium was produced, and had a great influence on various characteristics such as reflectance.

発明が解決しようとする問題点 本発明の目的はこのような事情のもとで、少なくとも1
種の元素から構成される記録層と反射層を有する情報記
録媒体において、該記録層から反射層への元素の移動を
抑えることにより、長期安定性に優れた情報記録媒体を
提供することにある。
Problems to be Solved by the Invention Under the circumstances, the object of the present invention is at least 1
In an information recording medium having a recording layer and a reflective layer composed of different elements, it is an object to provide an information recording medium excellent in long-term stability by suppressing migration of the element from the recording layer to the reflective layer. .

問題点を解決するための手段 本発明者らは、記録層を構成する元素が反射層に移動す
る原因は、記録層と反射層での濃度差に基づく熱拡散あ
るいは電気陰性度の差に起因する電気化学的反応にある
のではないかと考え、鋭意研究を重ねた結果、反射層の
記録層と接する面とは反対側の面に、記録層を構成する
元素で移動しやすく、かつ電気陰性度の小さい元素を含
有する薄膜層を積層することにより、記録層の構成元素
の反射層への移動を抑えることができて、高温高湿条件
下に長時間放置しても記録層の組成を一定に保つことが
でき、その上反射層の劣化も大幅に抑制しうること、そ
してそのためには、記録層を少なくともGe及びTeを含有
する層とし、反射層の記録層と接する面とは反対側の面
にGeを含有する薄膜層を設ければよいことを見出し、こ
の知見に基づいて本発明を完成するに至つた。
Means for Solving the Problems The inventors of the present invention have found that the cause of migration of the elements constituting the recording layer to the reflective layer is due to thermal diffusion or difference in electronegativity based on the concentration difference between the recording layer and the reflective layer. As a result of intensive studies, it was easy for the element constituting the recording layer to move to the surface opposite to the surface in contact with the recording layer, and electronegative. By stacking thin film layers containing elements with a low degree of influence, it is possible to suppress the transfer of constituent elements of the recording layer to the reflective layer, and to maintain the composition of the recording layer even when left under high temperature and high humidity conditions for a long time. It can be kept constant, and the deterioration of the reflective layer can be significantly suppressed, and for that purpose, the recording layer should be a layer containing at least Ge and Te, and the surface of the reflective layer opposite to the surface in contact with the recording layer. See that it is sufficient to provide a thin film layer containing Ge on the side surface. The present invention has been completed based on this finding.

すなわち、本発明は、少なくともGe及びTeを含有する記
録層と、反射層を有する情報記録媒体において、該反射
層に隣接して記録層とは反対側に、Geを含有する薄膜層
を設けることを特徴とする情報記録媒体を提供するもの
である。
That is, the present invention provides a recording layer containing at least Ge and Te, and an information recording medium having a reflective layer, a thin film layer containing Ge is provided adjacent to the reflective layer and on the side opposite to the recording layer. The present invention provides an information recording medium characterized by:

本発明の記録媒体における記録層は、比較的電気陰性度
が小さく移動しやすい、Ge及びTeを少なくとも含有する
系から構成されている。これらは、開孔、相変態、光磁
気方式や情報の記録様式などに制限されることはない。
The recording layer in the recording medium of the present invention is composed of a system containing at least Ge and Te, which has a relatively small electronegativity and is easy to move. These are not limited to holes, phase transformations, magneto-optical methods, information recording methods, and the like.

また、この記録層の膜厚は反射層の材料の種類によつて
異なるが、通常200〜1000Åの範囲が好ましい。
Further, the film thickness of the recording layer varies depending on the kind of the material of the reflective layer, but is usually preferably in the range of 200 to 1000Å.

反射層に使用する材料については特に制限はないが、G
e,Al,Ti,Cr,Co,Ni,Se,Zr,Ag,In,Sn,Sb,Te,Pt,Au,Pb,Bi
などの金属又はこれらの合金が好ましく、特にGe,Al,S
b,Bi及びBi2Te3が好適である。この反射層の膜厚は100
Å以上が好ましく、特に感度の点から100〜1000Åの範
囲が好ましい。
The material used for the reflective layer is not particularly limited, but G
e, Al, Ti, Cr, Co, Ni, Se, Zr, Ag, In, Sn, Sb, Te, Pt, Au, Pb, Bi
Metals or alloys thereof are preferred, especially Ge, Al, S
b, Bi and Bi 2 Te 3 are preferred. The thickness of this reflective layer is 100
It is preferably Å or more, and particularly preferably from 100 to 1000 Å from the viewpoint of sensitivity.

本発明の記録媒体における薄膜層は、記録層の構成元素
成分で電気陰性度の小さいGeを含有するものであって、
反射層に隣接して記録層とは反対側に設けられる。この
膜厚は500Å以下が好ましいが、情報記録時の熱の放散
を防ぐために、10〜100Åの範囲が特に好適である。
The thin film layer in the recording medium of the present invention contains a small electronegativity Ge as a constituent element component of the recording layer,
It is provided adjacent to the reflective layer and on the side opposite to the recording layer. The film thickness is preferably 500 Å or less, but a range of 10 to 100 Å is particularly suitable in order to prevent heat dissipation during information recording.

次に、本発明の情報記録媒体の構造を添付図面に従つて
説明する。第1図及び第2図の(A)、(B)、(C)
は、本発明の記録媒体のそれぞれ構造の異なつた例を示
す断面概略図であつて、情報の記録、再生を基板を通し
て行う場合は、第1図に示すように、基板1上に、記録
層2と反射層3を順次積層し、さらに本発明に係わる薄
膜層4を反射層3の上に積層した構造が基本構造として
挙げられる。
Next, the structure of the information recording medium of the present invention will be described with reference to the accompanying drawings. 1 and 2 (A), (B), (C)
FIG. 3 is a schematic cross-sectional view showing different examples of the structures of the recording medium of the present invention. When recording and reproducing information through a substrate, as shown in FIG. The basic structure is a structure in which 2 and the reflective layer 3 are sequentially stacked, and the thin film layer 4 according to the present invention is further stacked on the reflective layer 3.

また、第2図に示すように、金属酸化物又は金属窒化物
から成る保護層5を基板1と記録層2との間に設けるか
〔第2図(A)〕、又は該保護層5を本発明に係る薄膜
層4上に設けることにより〔第2図(B)〕、あるいは
該保護層5を基板1の上及び該薄膜層4の上の両方に設
けることにより〔第2図(C)〕、情報記録媒体の長期
安定性をさらに向上させることができる。
Further, as shown in FIG. 2, a protective layer 5 made of a metal oxide or a metal nitride is provided between the substrate 1 and the recording layer 2 [FIG. 2 (A)], or the protective layer 5 is provided. By providing it on the thin film layer 4 according to the present invention [FIG. 2 (B)], or by providing the protective layer 5 both on the substrate 1 and on the thin film layer 4 [FIG. )], The long-term stability of the information recording medium can be further improved.

該保護層5に用いる金属酸化物又は窒化物としては、例
えばAl,Cr,Si,Ge,Zr,Ti,V,Hf,Ce,Sn,La,Sm,Y,Sb,Ta,Pb,
Bi,Se,Teなどの中から選ばれた元素の酸化物又は窒化物
が好ましく挙げられる。これらの金属酸化物又は金属窒
化物から成る保護層を設けることにより、空気中や基板
中から記録層や反射層に浸透してくる水や酸素などの浸
入が防止され、記録層や反射層の劣化が大幅に抑制され
る。金属酸化物の中ではSiの酸化物が好ましく、特にSi
Ox(0<x≦2)で示されるような低酸化物が好まし
い。一方、金属窒化物では、Si,Al,Ti及びZrの窒化物が
好適である。
Examples of the metal oxide or nitride used for the protective layer 5 include Al, Cr, Si, Ge, Zr, Ti, V, Hf, Ce, Sn, La, Sm, Y, Sb, Ta, Pb,
Preferred are oxides or nitrides of elements selected from Bi, Se, Te and the like. By providing the protective layer made of these metal oxides or metal nitrides, invasion of water or oxygen that permeates the recording layer or the reflective layer from the air or the substrate is prevented, and the protective layer of the recording layer or the reflective layer is prevented. Deterioration is greatly suppressed. Among the metal oxides, oxides of Si are preferable, especially Si
Low oxides as indicated by Ox (0 <x ≦ 2) are preferred. On the other hand, among metal nitrides, nitrides of Si, Al, Ti and Zr are suitable.

なお、情報の記録、再生を基板と反対の記録層側から行
う場合には、第1図及び第2図に示す記録層、反射層及
び本発明に係わる薄膜層の順序が逆となる。
When recording and reproducing information from the recording layer side opposite to the substrate, the order of the recording layer, the reflection layer and the thin film layer according to the present invention shown in FIGS. 1 and 2 is reversed.

本発明における基板としては、ガラスやガラス上に光硬
化性樹脂を設けたもの、ポリカーボネート、アクリル樹
脂、エポキシ樹脂やポリスチレンなどのプラスチツク基
板、Al合金などの金属板などが用いられる。
As the substrate in the present invention, glass, a substrate provided with a photocurable resin on glass, a plastic substrate such as polycarbonate, acrylic resin, epoxy resin or polystyrene, or a metal plate such as Al alloy is used.

本発明の記録媒体を実際に情報記録媒体として用いる場
合は、基板上に記録材を設けた2枚の同一の円板を、記
録材を設けた面を互いに対向させた状態で、スペーサー
を介して接着一体化したいわゆるエアーサンドイツチ構
造や、2枚の同一の円板を、記録材を設けた面を互いに
対向させた状態で、スペーサーを介さずに、全面で接着
し一体化させたいわゆる全面接着構造、あるいはこれら
とは全く異なり、フイルム状のシートの上に記録材を設
け、このシートをロール状に巻いた構造などいずれの構
造にしてもよい。
When the recording medium of the present invention is actually used as an information recording medium, two identical discs having a recording material provided on a substrate are placed with a spacer in between with the surfaces provided with the recording material facing each other. The so-called air-sandwich structure or two identical discs that are bonded and integrated with each other are bonded and integrated on the entire surface without a spacer, with the surfaces provided with the recording materials facing each other. A so-called whole-surface adhesive structure, or a structure different from these, such as a structure in which a recording material is provided on a film-like sheet and the sheet is rolled, may be adopted.

発明の効果 本発明の情報記録媒体は、記録層を構成する元素で電気
陰性度の小さなものを含有する薄膜層を、反射層に隣接
して設けた構造を有するものであつて、このため高温高
湿条件下に長時間放置しても、記録層の組成は一定に維
持され、かつ反射層の劣化も大幅に抑制され、長期安定
性及び信頼性の優れたものである。
EFFECTS OF THE INVENTION The information recording medium of the present invention has a structure in which a thin film layer containing an element that constitutes the recording layer and has a low electronegativity is provided adjacent to the reflective layer, and therefore, at a high temperature. The composition of the recording layer is maintained constant even when left for a long time under high humidity conditions, and the deterioration of the reflective layer is significantly suppressed, resulting in excellent long-term stability and reliability.

実施例 次に実施例により本発明をさらに詳細に説明する。EXAMPLES Next, the present invention will be described in more detail with reference to examples.

実施例1 ポリメチルメタクリレート(以下PMMAと略す)基板上
に、記録層としてGeTe(Ge:Te原子比≒1:1)を真空蒸着
法で400Å形成後、続いて反射層としてSbを500Å設けた
サンプルと、このSb層の上へGe50Å,100Åを積層したサ
ンプルを作製した。
Example 1 GeTe (Ge: Te atomic ratio ≈ 1: 1) was formed as a recording layer on a polymethylmethacrylate (hereinafter abbreviated as PMMA) substrate by 400 V by vacuum deposition, and then Sb was provided by 500 L as a reflective layer. A sample was prepared by stacking Ge50Å and 100Å on this Sb layer.

波長8300Åの半導体レーザー光で、前記作製直後のサン
プルを基板越しに反射率を測定後、該サンプルを60℃、
90%RH(相対湿度)の雰囲気中で長時間放置したのち、
反射率を測定した。その結果を第1表に示す。
A semiconductor laser beam having a wavelength of 8300 Å was used to measure the reflectance of the sample just after the production through the substrate,
After leaving it in an atmosphere of 90% RH (relative humidity) for a long time,
The reflectance was measured. The results are shown in Table 1.

60℃、90%RHに1000時間放置したサンプルについて、SI
MS(Secondary Ion Mass Spectroscopy)を用いて、膜
厚方向の組成を調査した結果、Sb反射層の上にGe層を設
けないサンプルはSbの反射層内にGeが移動し、GeTe層で
Geの濃度が低下する現象を確認した。ところが、Sb反射
層の上にGeを設けた場合には、GeTe層の組成はほぼ一定
であつた。
For samples left at 60 ° C and 90% RH for 1000 hours, SI
As a result of investigating the composition in the film thickness direction using MS (Secondary Ion Mass Spectroscopy), in the sample in which the Ge layer was not provided on the Sb reflective layer, Ge moved into the Sb reflective layer and the GeTe layer
It was confirmed that the concentration of Ge decreased. However, when Ge was provided on the Sb reflective layer, the composition of the GeTe layer was almost constant.

また、60℃、90%RHに1000時間放置したサンプルをESCA
(Electron Spectroscopy for Chemical Analysis)に
てSb反射層の被酸化率を調べた結果、Sb反射層の上にGe
層を設けないサンプルでは約250Åの深さまで酸化が進
行していたのに対し、Ge層を有するサンプルでは約100
Åと反射層の劣化が抑えられていた。
In addition, the sample left at 60 ° C and 90% RH for 1000 hours was ESCA
As a result of investigating the oxidization rate of the Sb reflective layer by (Electron Spectroscopy for Chemical Analysis), Ge on the Sb reflective layer
Oxidation proceeded to a depth of about 250 Å in the sample without the layer, whereas it was about 100 in the sample with the Ge layer.
Å and deterioration of the reflective layer was suppressed.

第1表から分かるように、Sb反射層の上へGe層を設けな
い場合、反射率が大きく変化している。これは、GeTe層
の光学特性変化の他にSb反射層の酸化が進行した結果、
金属Sb層の膜厚が実質上、薄くなつたためである。
As can be seen from Table 1, when the Ge layer is not provided on the Sb reflective layer, the reflectance changes greatly. This is because the oxidation of the Sb reflective layer progressed in addition to the change in the optical characteristics of the GeTe layer,
This is because the metal Sb layer is substantially thin.

また、GeTe層内のGe量の減少は、反射率に影響を与える
だけでなく、本質的に相変態特性を変化させるために情
報記録時の感度などに大きな問題を与えることになる。
In addition, the reduction of the Ge content in the GeTe layer not only affects the reflectance but also causes a serious problem in sensitivity during information recording because it essentially changes the phase transformation characteristics.

それに比べ、Sb反射層上にGe薄膜を設けた場合には、第
1表からも分かるように反射率の変化を抑え、しかも、
GeTe層の組成もほぼ一定に維持される。
On the other hand, when a Ge thin film is provided on the Sb reflective layer, the change in reflectance is suppressed as shown in Table 1, and
The composition of the GeTe layer is also kept almost constant.

実施例2 実施例1と同様に、PMMA基板上に、記録層としてSb−Te
−Ge(Sb:Te:Ge≒15:40:45)を真空蒸着法で330Å形成
後、続いて反射層としてSbを500Å設けたサンプルとSb
層の上へGe50Å,100Åを積層したサンプルを作成した。
Example 2 Similar to Example 1, Sb-Te was used as a recording layer on a PMMA substrate.
-Sample (Sb: Te: Ge ≒ 15:40:45) of 330 Å was formed by vacuum deposition method, and then 500 Å Sb was provided as a reflection layer
A sample was prepared by stacking Ge50Å and 100Å on the layer.

波長8300Åの光で、上記3種類のサンプルの反射率を測
定後、このサンプルを60℃、90%RHの雰囲気下に長時間
放置したのち、反射率を測定した。その結果を第2表に
示す。
After measuring the reflectances of the above three types of samples with light having a wavelength of 8300Å, the samples were left in an atmosphere of 60 ° C and 90% RH for a long time, and then the reflectances were measured. The results are shown in Table 2.

第2表から分かるように、Ge薄膜を設けないサンプルで
の反射率変化に対してGe薄膜を設けた場合には変化率が
小さい。
As can be seen from Table 2, when the Ge thin film is provided, the rate of change is small with respect to the reflectance change in the sample in which the Ge thin film is not provided.

また、SIMS,ESCAによる分析結果も実施例1と同様に、G
e薄膜をSb反射層に積層した場合には、Sb−Te−Ge層か
らGeの移動を抑え、しかもSb反射層の酸化による劣化も
少なくなることが判明した。
In addition, the analysis results by SIMS and ESCA are similar to those in the first embodiment.
It was found that when the e thin film was laminated on the Sb reflective layer, the movement of Ge from the Sb-Te-Ge layer was suppressed, and the deterioration of the Sb reflective layer due to oxidation was reduced.

【図面の簡単な説明】[Brief description of drawings]

第1図及び第2図(A),(B),(C)は、それぞれ
本発明の情報記録媒体の異なつた例の断面概略図であつ
て、図中符号1は基板、2は記録層、3は反射層、4は
本発明に係わる薄膜層、5は保護層である。
1 and 2 (A), (B), and (C) are schematic cross-sectional views of different examples of the information recording medium of the present invention, in which reference numeral 1 is a substrate and 2 is a recording layer. 3 is a reflective layer, 4 is a thin film layer according to the present invention, and 5 is a protective layer.

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】少なくともGe及びTeを含有する記録層と、
反射層を有する情報記録媒体において、該反射層に隣接
して記録層とは反対側に、Geを含有する薄膜層を設ける
ことを特徴とする情報記録媒体。
1. A recording layer containing at least Ge and Te,
An information recording medium having a reflective layer, characterized in that a thin film layer containing Ge is provided adjacent to the reflective layer and on the side opposite to the recording layer.
JP60295539A 1985-12-26 1985-12-26 Information recording medium Expired - Lifetime JPH06103545B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60295539A JPH06103545B2 (en) 1985-12-26 1985-12-26 Information recording medium

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60295539A JPH06103545B2 (en) 1985-12-26 1985-12-26 Information recording medium

Publications (2)

Publication Number Publication Date
JPS62154245A JPS62154245A (en) 1987-07-09
JPH06103545B2 true JPH06103545B2 (en) 1994-12-14

Family

ID=17821947

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60295539A Expired - Lifetime JPH06103545B2 (en) 1985-12-26 1985-12-26 Information recording medium

Country Status (1)

Country Link
JP (1) JPH06103545B2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2584741B2 (en) * 1986-03-11 1997-02-26 松下電器産業株式会社 Rewritable optical information recording member

Also Published As

Publication number Publication date
JPS62154245A (en) 1987-07-09

Similar Documents

Publication Publication Date Title
EP1609139B1 (en) Recording medium having super-resolution near-field structure and method and apparatus for reproducing the same
JP2001250274A (en) Optical information medium and its reproducing method
JPH0695388B2 (en) Information recording medium
EP0474311A1 (en) Optical data recording medium, method for writing and reading data and apparatus for recording data
JPH0896411A (en) Information recording medium and its production
JP5058346B2 (en) Information recording medium and manufacturing method thereof
JPH0725200B2 (en) Information recording medium
EP1040937A1 (en) Write once optical information recording medium
JP2834131B2 (en) Thin film for information recording
JPH0380635B2 (en)
CN101303867B (en) Optical storage medium and method of producing optical storage medium
EP1571658A2 (en) Optical information recording medium and method of manufacturing the same
JPH06103545B2 (en) Information recording medium
EP0362852B1 (en) Information-recording thin film and method for recording and reproducing information
JP3908571B2 (en) Optical information recording medium, manufacturing method thereof, and recording / reproducing method thereof
JP4060574B2 (en) Write-once optical recording medium
JPWO2010032348A1 (en) Information recording medium and manufacturing method thereof
JPS6211683A (en) Preparation of recording medium
JP2003030899A (en) Information recording medium, information recording and reproducing method, and information recording and reproducing device
JPS59218644A (en) Optical recording medium
JP2562427B2 (en) Optical information recording medium
JPS62127287A (en) Optical recording material
JPH0411927B2 (en)
JPH0798419B2 (en) Optical recording medium
JPWO2006004025A1 (en) Optical recording medium and manufacturing method thereof