JPH06102828B2 - Strip coating device - Google Patents

Strip coating device

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Publication number
JPH06102828B2
JPH06102828B2 JP2283437A JP28343790A JPH06102828B2 JP H06102828 B2 JPH06102828 B2 JP H06102828B2 JP 2283437 A JP2283437 A JP 2283437A JP 28343790 A JP28343790 A JP 28343790A JP H06102828 B2 JPH06102828 B2 JP H06102828B2
Authority
JP
Japan
Prior art keywords
strip
opening
film
plate
forming chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2283437A
Other languages
Japanese (ja)
Other versions
JPH04160159A (en
Inventor
俊雄 佐藤
俊夫 石井
峻一 杉山
洋 木部
孝二 松井
Original Assignee
日本鋼管株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日本鋼管株式会社 filed Critical 日本鋼管株式会社
Priority to JP2283437A priority Critical patent/JPH06102828B2/en
Publication of JPH04160159A publication Critical patent/JPH04160159A/en
Publication of JPH06102828B2 publication Critical patent/JPH06102828B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Description

【発明の詳細な説明】 [産業上の利用分野] 本発明は、真空蒸着、イオンプレーティングにより帯板
に皮膜を形成する装置に係り、とくに蒸気流形成室と皮
膜形成室とを区割する仕切板の開口部の改良に関する。
Description: TECHNICAL FIELD The present invention relates to an apparatus for forming a film on a strip by vacuum deposition or ion plating, and particularly divides a vapor flow forming chamber and a film forming chamber. The present invention relates to improvement of the opening of a partition plate.

[従来技術] 第5図は、広幅の蒸着装置またはイオンプレーティング
装置の代表的な構成を示す。この装置は、真空雰囲気と
した装置本体11を仕切板12で上下に仕切り、下部に蒸気
流形成室13、上部に皮膜形成室14を形成している。蒸気
流形成室13には、下部にアルミニウム、錫、チタンなど
の蒸着用金属材料Mを入れた水冷一体銅製坩堝15が配置
され、側部に電子銃16及び電子銃16からの電子ビームの
軌跡を制御する2軸偏向コイルなどの制御手段17が設け
られている。さらに坩堝15の上方にフード18を配置し、
フード18の上方に電極19を配置している。直流電源19の
正極側に上記電極19を、負極側に上記坩堝15を接続して
いる。上記仕切板12は開口部12aを有し、また皮膜形成
室14には帯板Sが走行している。
[Prior Art] FIG. 5 shows a typical configuration of a wide vapor deposition apparatus or an ion plating apparatus. In this device, a device main body 11 in a vacuum atmosphere is vertically divided by a partition plate 12, a vapor flow forming chamber 13 is formed in the lower part, and a film forming chamber 14 is formed in the upper part. In the vapor flow forming chamber 13, a water-cooled integrated copper crucible 15 containing a metal material M for vapor deposition such as aluminum, tin, or titanium is arranged in the lower part, and an electron gun 16 and a trajectory of an electron beam from the electron gun 16 are arranged on a side portion. A control means 17 such as a biaxial deflection coil for controlling the is provided. Furthermore, the hood 18 is arranged above the crucible 15,
An electrode 19 is arranged above the hood 18. The electrode 19 is connected to the positive electrode side of the DC power source 19, and the crucible 15 is connected to the negative electrode side. The partition plate 12 has an opening 12a, and the strip S runs in the film forming chamber 14.

この蒸着装置では、坩堝15中の蒸着用金属材料Mを電子
銃16からの電子ビームで加熱溶解して、その蒸気流を仕
切板12の開口部12aを通して帯板Sに付着して皮膜を形
成する。この場合、帯板Sに形成する皮膜の板幅方向の
膜厚分布は、中央が厚く、両サイドが薄くなる問題があ
った。この問題を解決するために、坩堝15の幅を帯板S
の幅より大きくすることが提案されているが(例えば、
特開昭62−70576号)、この方法では歩留まりが悪化す
る問題があり、良い対策とはいえない。さらにイオンプ
レーティングでクロムなどの昇華性物質を蒸着する場合
は、放電が必ずしも均一ではなく、アークスポットを中
心とした部分の膜厚が厚くなり、膜厚の不均一化が顕著
になる問題があった。この問題を解消するために、電子
ビームの加熱法を変更するなどの対策が考えられている
が、加熱物の熱容量の関係もあり、このような対策のみ
では解決が困難であり、根本的な対策が望まれていた。
In this vapor deposition apparatus, the vapor deposition metal material M in the crucible 15 is heated and melted by the electron beam from the electron gun 16, and the vapor flow thereof is attached to the strip S through the opening 12a of the partition plate 12 to form a film. To do. In this case, the film thickness distribution of the film formed on the strip S in the plate width direction has a problem that the center is thick and both sides are thin. In order to solve this problem, the width of the crucible 15 is set to the strip plate S.
It is proposed to be larger than the width of
Japanese Unexamined Patent Publication (Kokai) No. 62-70576), this method has a problem that the yield is deteriorated and cannot be said to be a good countermeasure. Furthermore, when a sublimable substance such as chromium is vapor-deposited by ion plating, the discharge is not always uniform, and the film thickness in the part centered on the arc spot becomes thicker, which causes a problem that the film thickness becomes uneven. there were. In order to solve this problem, measures such as changing the electron beam heating method have been considered, but it is difficult to solve by such measures alone due to the heat capacity of the heating object, and Measures were desired.

[発明が解決しようとする技術的課題] 本発明は上記事情に鑑みてなされたもので、その目的と
するところは、特に広幅、長尺の帯板に皮膜を形成する
に際して、開口部の開口面積を可変として、膜厚の均一
化を図ることができる帯板の皮膜形成装置を提供するも
のである。
[Technical Problem to be Solved by the Invention] The present invention has been made in view of the above circumstances, and an object of the present invention is to open an opening when a film is formed on a wide strip or a long strip. (EN) Provided is a strip plate film forming apparatus capable of making the film thickness uniform by varying the area.

[課題を解決する手段] すなわち本発明は、走行する帯板に金属を付着させて帯
板表面に皮膜を形成する帯板の皮膜形成装置において、
皮膜形成用蒸気流を形成する室と、蒸気流を帯板に付着
させて皮膜を形成する室とを区割形成した装置本体と、
蒸気流形成室と皮膜形成室とを区割し、蒸気流形成室か
らの蒸気流を皮膜形成室に導く開口部を設けた仕切板
と、この仕切板の開口部に、帯板の幅方向に沿って配置
され、帯板の長手方向にスライド可能な複数の開閉板
と、帯板に形成される皮膜の帯板幅方向の膜厚分布を計
測する手段と、この計測手段からの出力信号に基づいて
上記各開閉板をスライド動作して上記開口部における開
口部の開口面積を調節する開閉板駆動手段と、を具備し
てなる帯板の皮膜形成装置である。
[Means for Solving the Problem] That is, the present invention provides a strip plate film forming apparatus for depositing a metal on a running strip plate to form a film on the strip plate surface.
An apparatus body in which a chamber for forming a film forming vapor stream and a chamber for adhering the vapor flow to a strip plate to form a film are formed separately.
A partition plate provided with an opening that divides the vapor flow forming chamber and the film forming chamber and guides the vapor flow from the vapor flow forming chamber to the film forming chamber, and the opening of the partition plate in the width direction of the strip plate. A plurality of opening / closing plates which are arranged along the strip and are slidable in the longitudinal direction of the strip, means for measuring the film thickness distribution of the film formed on the strip in the width direction of the strip, and an output signal from this measuring means. An opening / closing plate drive means for slidingly operating each of the opening / closing plates based on the above to adjust the opening area of the opening in the opening, and a film forming apparatus for a strip plate.

この装置によれば、帯板の幅方向の皮膜分布を検出し
て、これに対応して適宜開口部の面積を調整することに
より、帯板の幅方向の膜厚分布を均一にする。このこと
により、中心部の膜厚が大きく両サイドの膜厚が小さく
なるという膜厚分布に対処することができ、また異常放
電により膜厚が変動することに対処することができる。
According to this apparatus, the film distribution in the width direction of the strip plate is detected, and the area of the opening is appropriately adjusted in response to this, thereby making the film thickness distribution in the width direction of the strip plate uniform. This makes it possible to deal with the film thickness distribution in which the film thickness at the central portion is large and the film thicknesses on both sides are small, and it is also possible to cope with fluctuations in the film thickness due to abnormal discharge.

[実施例] 以下、本発明を図面を参照して説明する。第1図は本発
明に係る帯板の皮膜形成装置の概略図、第2図は同模式
図である。この装置は、真空雰囲気とする装置本体11を
仕切板12で上下に仕切り、下部に蒸気流形成室13、上部
に皮膜形成室14を形成している。蒸気流形成室13には、
下部にアルミニウム、錫、チタンなどの蒸着用金属材料
Mを入れた水冷一体銅製坩堝15が配置され、側部に電子
銃16及び電子銃からの電子ビームの軌跡を制御する2軸
偏向コイルなどの制御手段17が設けられている。さらに
坩堝15の上方にフード18を配置し、フード18の上方にイ
オン化電極19を配置している(第3図参照)。直流電源
20の正極側に上記電極19を、負極側に上記坩堝15を接続
している。また皮膜形成室14には帯板Sが走行してい
る。上記仕切板12は開口部12aを有し、開口部12aの帯板
走行方向の下流側(図面右側)に複数の開閉板21…を帯
板の幅方向に沿って配置している。これら開閉板21は帯
板Sの長手方向(走行方向)沿ってスライド可能になっ
ている。これら開閉板21は、いずれも開閉板駆動手段22
に接続されており、これら開閉板駆動手段22により各開
閉板21を帯板Sの長手方向(走行方向)沿って開口部上
をスライドさせる。開閉板駆動手段22はそれぞれ各膜厚
検出器23に接続されている。各膜厚検出器23はそれぞれ
帯板Sの幅方向の所定箇所の膜厚を検出するもので、検
出した膜厚信号を上記開閉板駆動手段22に出力し、開閉
板駆動手段22はその出力信号に基づいて開閉板21を駆動
する。すなわち、膜厚が厚い時には、開口部を閉じる方
向に、膜厚が薄いときには開口部を開く方向に動かし
て、開口部の開口面積をそれぞれ調節する。
[Examples] Hereinafter, the present invention will be described with reference to the drawings. FIG. 1 is a schematic view of a strip film forming apparatus according to the present invention, and FIG. 2 is a schematic view thereof. In this device, a device body 11 to be in a vacuum atmosphere is vertically divided by a partition plate 12, a vapor flow forming chamber 13 is formed in the lower part, and a film forming chamber 14 is formed in the upper part. In the steam flow forming chamber 13,
A water-cooled integrated copper crucible 15 containing a metal material M for vapor deposition of aluminum, tin, titanium or the like is arranged in the lower part, and an electron gun 16 and a biaxial deflection coil for controlling the trajectory of the electron beam from the electron gun are arranged on the side parts. A control means 17 is provided. Further, a hood 18 is arranged above the crucible 15 and an ionization electrode 19 is arranged above the hood 18 (see FIG. 3). DC power supply
The electrode 19 is connected to the positive electrode side of 20, and the crucible 15 is connected to the negative electrode side. A strip S is running in the film forming chamber 14. The partition plate 12 has an opening 12a, and a plurality of opening / closing plates 21 ... Are arranged along the width direction of the strip on the downstream side (right side in the drawing) of the opening 12a in the strip traveling direction. These opening / closing plates 21 are slidable along the longitudinal direction (traveling direction) of the strip S. Each of these opening / closing plates 21 is an opening / closing plate driving means 22.
The opening / closing plate driving means 22 slides each opening / closing plate 21 on the opening along the longitudinal direction (traveling direction) of the strip S. The opening / closing plate driving means 22 is connected to each film thickness detector 23. Each film thickness detector 23 detects the film thickness at a predetermined position in the width direction of the strip S, and outputs the detected film thickness signal to the opening / closing plate driving means 22, and the opening / closing plate driving means 22 outputs the signal. The opening / closing plate 21 is driven based on the signal. That is, when the film thickness is large, the opening area is adjusted by moving the opening portion in the closing direction, and when the film thickness is thin, moving the opening portion in the opening direction.

この装置では、電子銃16からの電子ビームで金属材料M
を加熱して、蒸気流を形成し、蒸気流はフード18で集め
られ、電極19によりイオン化され、開口部12aを通って
帯板Sに付着して皮膜を形成する。
In this device, the electron beam from the electron gun 16 causes the metallic material M
Are heated to form a vapor stream, which is collected in the hood 18, ionized by the electrode 19, and adheres to the strip S through the opening 12a to form a film.

ここで、開口部の開口面積を変動することにより膜厚を
制御できることの有効性は、以下の数値モデルを用いて
確認した。
Here, the effectiveness of being able to control the film thickness by changing the opening area of the opening was confirmed using the following numerical model.

上式の中で、 m :蒸発量密度分布 α:蒸着物質が飛散する鉛直方向の角度 m0:垂直方向の蒸発物質の密度 p :温度Tの蒸発物質の蒸気圧 M :蒸発物質の分子量 n :蒸発に際しての指向性パラメータ T :蒸発物質の温度 である。 In the above equation, m: Evaporation amount density distribution α: Vertical angle at which the vapor deposition material scatters m 0 : Vertical vapor density of the vapor p: Vapor pressure of vapor at temperature T M: Molecular weight of vapor n : Directional parameter for evaporation T: Temperature of evaporated material.

この数値モデルを使い、坩堝面温度が均一だと想定し、
W(帯板の幅)=500mm、H(金属材料表面から帯板ま
での距離)=0.9W、坩堝寸法500×150mm、スリット開口
部246×510mmで固定し、n=1として数値解析した。こ
の時の帯板の幅方向の最大膜厚と最小膜厚の比は1.36で
あった。一方仕切板開口部の面積を第4図に示すように
D1=510mm、D2=165mm、D3=180mm、d1=246mm、d2=11
0mmと調節した場合には、最大、最小の膜厚比は1.04で
あった。
Using this numerical model, assuming that the crucible surface temperature is uniform,
W (width of strip) = 500 mm, H (distance from surface of metal material to strip) = 0.9 W, crucible size 500 × 150 mm, slit opening 246 × 510 mm, and n = 1 for numerical analysis. At this time, the ratio of the maximum film thickness and the minimum film thickness in the width direction of the strip was 1.36. On the other hand, as shown in Fig. 4, the area of the partition plate opening
D 1 = 510mm, D 2 = 165mm, D 3 = 180mm, d 1 = 246mm, d 2 = 11
When adjusted to 0 mm, the maximum and minimum film thickness ratio was 1.04.

さらにW=500mm、H=450mmの上記数値解析と同じ条件
で従来の開口面積固定の場合(開口部246×510mm)と第
4図に示す開口寸法の場合とでアルミニウムの蒸着をお
こなった。その結果、従来の場合では最大膜厚と最小膜
厚との比が1.4であったが、本発明では膜厚比が1.05に
まで改善され、本発明の有効性が確認された。
Further, under the same conditions as in the above numerical analysis of W = 500 mm and H = 450 mm, aluminum was vapor-deposited under the conventional fixed opening area (opening 246 × 510 mm) and the opening size shown in FIG. As a result, the ratio of the maximum film thickness to the minimum film thickness was 1.4 in the conventional case, but in the present invention, the film thickness ratio was improved to 1.05, confirming the effectiveness of the present invention.

[発明の効果] 以上説明したように、本発明によれば、広幅、長尺の帯
板に蒸着またはイオンプレーティングをおこなうに際
し、中心部の膜厚が大きく両サイドの膜厚が小さくなる
傾向、さらに異常放電により膜厚が変動する事態があっ
ても、それに応じて開口部の寸法、形状を適宜変更する
ので、帯板の幅方向に均一な膜厚を安定的に得ることが
可能である。
[Effects of the Invention] As described above, according to the present invention, when vapor deposition or ion plating is performed on a wide strip or a long strip, the thickness of the central portion tends to be large and the thickness of both sides tends to be small. Even if the film thickness fluctuates due to abnormal discharge, the size and shape of the opening are changed accordingly, so that a uniform film thickness can be stably obtained in the width direction of the strip plate. is there.

【図面の簡単な説明】[Brief description of drawings]

第1図は本発明の帯板の皮膜形成装置の概略断面図、第
2図は同装置の模式図、第3図は仕切板の開口部に取付
けた開閉板及びこれを開閉する機構を示す説明図、第4
図は本発明の実施例に用いた開口部の寸法、形状を示す
図、第5図は従来の帯板の皮膜形成装置の概略断面図で
ある。 11……装置本体、12……仕切板、12a……開口部、13…
…蒸気流形成室、14……皮膜形成室、15……水冷一体銅
製坩堝、16……電子銃、17……制御手段、18……フー
ド、19……イオン化電極、20……直流電源、21……開閉
板、22……開閉板駆動手段、23……膜厚検出器
FIG. 1 is a schematic cross-sectional view of a strip film forming apparatus of the present invention, FIG. 2 is a schematic view of the apparatus, and FIG. 3 shows an opening / closing plate attached to an opening of a partition plate and a mechanism for opening and closing the opening / closing plate. Explanatory drawing, 4th
FIG. 5 is a diagram showing the size and shape of the opening used in the embodiment of the present invention, and FIG. 11 …… Device body, 12 …… Partition plate, 12a …… Opening part, 13…
… Vapor flow forming chamber, 14 …… Film forming chamber, 15 …… Water cooling integrated copper crucible, 16 …… Electron gun, 17 …… Control means, 18 …… Hood, 19 …… Ionizing electrode, 20 …… DC power supply, 21 ... Open / close plate, 22 ... Open / close plate driving means, 23 ... Film thickness detector

───────────────────────────────────────────────────── フロントページの続き (72)発明者 木部 洋 東京都千代田区丸の内1丁目1番2号 日 本鋼管株式会社内 (72)発明者 松井 孝二 東京都千代田区丸の内1丁目1番2号 日 本鋼管株式会社内 (56)参考文献 特開 昭62−270772(JP,A) 特開 昭62−290868(JP,A) ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Hiroshi Kibe 1-2-1, Marunouchi, Chiyoda-ku, Tokyo Inside Nippon Steel Tube Co., Ltd. (72) Koji Matsui 1-2-1, Marunouchi, Chiyoda-ku, Tokyo Nihon Steel Pipe Co., Ltd. (56) Reference JP-A-62-270772 (JP, A) JP-A-62-290868 (JP, A)

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】走行する帯板に金属を付着させて帯板表面
に皮膜を形成する帯板の皮膜形成装置において、皮膜形
成用蒸気流を形成する室と、蒸気流を帯板に付着させて
皮膜を形成する室とを区割形成した装置本体と、蒸気流
形成室と皮膜形成室とを区割し、蒸気流形成室からの蒸
気流を皮膜形成室に導く開口部を設けた仕切板と、この
仕切板の開口部に、帯板の幅方向に沿って配置され、帯
板の長手方向にスライド可能な複数の開閉板と、帯板に
形成される皮膜の帯板幅方向の膜厚分布を計測する手段
と、この計測手段からの出力信号に基づいて上記各開閉
板をスライド動作して上記開口部における開口部の開口
面積を調節する開閉板駆動手段と、を具備してなる帯板
の皮膜形成装置。
Claim: What is claimed is: 1. A strip film coating apparatus for depositing a metal on a running strip to form a coating on the surface of the strip. A chamber for forming a vapor stream for film formation, and a vapor stream attached to the strip. The device main body is divided into a chamber for film formation and a partition with an opening for dividing the vapor flow forming chamber and the film forming chamber and guiding the vapor flow from the vapor flow forming chamber to the film forming chamber. A plate, a plurality of opening / closing plates that are arranged in the opening of the partition plate along the width direction of the strip and are slidable in the longitudinal direction of the strip, and a film formed on the strip in the width direction of the strip. A means for measuring the film thickness distribution, and an opening / closing plate driving means for slidingly operating the respective opening / closing plates based on an output signal from the measuring means to adjust the opening area of the openings in the openings. Strip plate film forming device.
JP2283437A 1990-10-23 1990-10-23 Strip coating device Expired - Lifetime JPH06102828B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2283437A JPH06102828B2 (en) 1990-10-23 1990-10-23 Strip coating device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2283437A JPH06102828B2 (en) 1990-10-23 1990-10-23 Strip coating device

Publications (2)

Publication Number Publication Date
JPH04160159A JPH04160159A (en) 1992-06-03
JPH06102828B2 true JPH06102828B2 (en) 1994-12-14

Family

ID=17665536

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2283437A Expired - Lifetime JPH06102828B2 (en) 1990-10-23 1990-10-23 Strip coating device

Country Status (1)

Country Link
JP (1) JPH06102828B2 (en)

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JP4591570B2 (en) 2008-07-28 2010-12-01 株式会社村田製作所 Frequency adjustment device
KR102084707B1 (en) * 2012-12-03 2020-04-16 삼성디스플레이 주식회사 Deposition source, deposition apparatus and deposition method using the same
WO2019239185A1 (en) * 2018-06-13 2019-12-19 Arcelormittal Vacuum deposition facility and method for coating a substrate

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JPS62270772A (en) * 1986-05-20 1987-11-25 Mitsubishi Heavy Ind Ltd On-line learning control method for deposition amount in continuous vacuum deposition device
JPH0696767B2 (en) * 1986-06-11 1994-11-30 住友重機械工業株式会社 Continuous vacuum deposition equipment

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