JPH0589815A - Electron beam application device - Google Patents

Abstract

PURPOSE:To make drawing, sensing, testing, etc., quickly and precisely. CONSTITUTION:A deflector 11 for calibration to deflect an electron beam 2 is installed between an electron source 1 to emit the electron beam 2 and an objective lens 5 to throttle it. The position and speed of a stage 6 are sensed by sensors 7, 8, and in accordance with the given results the deflection amount of the deflector 11 is controlled by deflector control devices 9, 10.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electron beam application device such as a continuous movement type electron beam drawing device, a pattern inspection device, and an operation test device.

[0002]

2. Description of the Related Art In an electron beam drawing apparatus, a drawing method is important for drawing at high speed and with high accuracy. The drawing method includes a step-and-repeat method of a stage and a continuous movement method. is there. The step-and-repeat method is a method in which the stage is stopped during drawing, the drawing area is completely drawn, the stage is moved to the next deflection area, and the drawing is performed again. On the other hand, the continuous movement method is a method of drawing while continuously moving the stage.

Conventionally, there have been many electron beam drawing apparatuses using the step-and-repeat method in which the deflection distance of the beam is set to a certain extent. However, there is a limit in increasing the moving speed of the stage for improving the throughput of the electron beam drawing apparatus. Therefore, in recent years, from the viewpoint of drawing throughput, an electron beam drawing apparatus in which the deflection distance of the electron beam is increased by the continuous movement method has been attracting attention.

FIG. 7 is a schematic view showing a conventional continuous movement type electron beam drawing apparatus, and FIG. 8 is a schematic perspective view showing a part of the electron beam drawing apparatus shown in FIG. In the figure, 1 is an electron source, 2 is an electron beam emitted from the electron source 1, and 3 is an electron beam 2.
Electrostatic drawing deflector provided at the passage position of the deflector, 4 is a deflector control device for controlling the drawing deflector 3, 5 is an objective lens provided below the drawing deflector 3, and 6 is an objective. A stage provided below the lens 5 moves the stage 6 in the X and Y directions by a driving device (not shown).

In this electron beam drawing apparatus, while the driving device moves the stage 6 on which a sample (not shown) is placed in the X and Y directions, the deflector control device 4 draws data based on the drawing signal. The deflector 3 is controlled, the drawing deflector 3 deflects the electron beam 2, and the objective lens 5 focuses the electron beam 2 to draw a pattern on the sample.

However, in this electron beam drawing apparatus,
The electron beam 2 is greatly narrowed, and the deflection amount of the electron beam 2 is passed through.
From the standpoint of putting, the diameter of the objective lens 5 is increased in order to satisfy the two requirements of expanding from the conventional sub mm to several mm. Therefore, since the magnetic field of the objective lens 5 leaks onto the stage 6, an eddy current is generated inside the stage 6, and the orbit of the electron beam 2 is bent by the magnetic field generated by this eddy current. Irradiation position error occurs.
As a result, the positional accuracy of the drawing pattern is reduced.

In order to avoid this, an attempt to manufacture the stage 6 from an insulating material such as ceramics has been conducted in a vacuum science and technology magazine (J. Vac. Sci. Technol.) B 5 (1), January / 2.
Month 1987, pp. 61-65.

[0008]

However, even if the stage 6 is made of an insulating material such as ceramics, the stage 6 is not produced.
It is impossible to eliminate all the metal parts of the above, and an eddy current is generated in the metal part of the stage 6, and the trajectory of the electron beam 2 is bent by the magnetic field generated by this eddy current. Especially, since the structure of the semiconductor element is miniaturized,
The influence of the eddy current generated in the metal parts of D6 cannot be ignored.

The present invention has been made to solve the above problems, and an object of the present invention is to provide an electron beam application apparatus capable of performing drawing, detection, test and the like at high speed and with high accuracy.

[0010]

In order to achieve this object, the present invention has an electron source, an objective lens that narrows down an electron beam emitted from the electron source, and a stage on which a sample is placed. In a continuous movement type electron beam application apparatus, a deflector for deflecting the electron beam, a detector for detecting the speed of the stage, and a deflector for deflecting the deflector according to the speed of the stage detected by the detector. And a deflector controller for controlling the quantity.

In this case, a detector that detects the position and speed of the stage is used as the detector, and the deflector controller controls the deflection amount of the deflector according to the position and speed of the stage detected by the detector. You may use what controls.

As the deflector control device, a device that stores a table of the deflection amount of the deflector with respect to the position and speed of the stage may be used.

The electron beam application apparatus is referred to as an electron beam drawing apparatus.

[0014]

In this electron beam application apparatus, an eddy current is generated inside the stage by the magnetic field leaked from the objective lens having a large diameter, and the magnetic field generated by this eddy current causes
Even if the trajectory of the electron beam is bent, the irradiation position error of the electron beam can be reduced by correcting the deflection amount of the electron beam.

[0015]

1 is a schematic view showing an electron beam drawing apparatus according to the present invention, and FIG. 2 is a block diagram showing a part of the electron beam drawing apparatus shown in FIG. In the figure, 7 and 8 are the positions Px and Py of the stage 6 in the X and Y directions and the velocity V, respectively.
Detectors for detecting x and Vy, 12 and 13 are position detectors for detecting the positions Px and Py of the stage 6 in the X and Y directions from the laser light reflected by a mirror (not shown) fixed to the stage 6. , 14, 15 are delay circuits for delaying the signals of the positions Px, Py from the position detectors 12, 13 by 2.56 μs, and 16, 17 are signals of the positions Px, Py from the position detectors 12, 13 and the delay circuit. The position detector 1 is a speed calculator that calculates speeds Vx and Vy from the delay signal from 16
2, 13, delay circuits 14, 15, speed calculators 16, 17
The velocity and position detectors 7 and 8 are constituted by the above. 1
Reference numeral 1 is an electrostatic correction deflector provided between the drawing deflector 3 and the objective lens 5, and 9 and 10 are X of the correction deflector 11 according to the positions Px, Py and the speeds Vx, Vy. direction,
A deflector control device for controlling the deflection amount in the Y direction. The deflector control devices 9 and 10 include a position Px with respect to speeds Vx and Vy.
A table of correction amounts of the deflection amounts of Py in the X and Y directions is stored in advance.

Next, a method of creating a table of the correction amounts of the deflection amounts in the X and Y directions at the positions Px and Py with respect to the velocities Vx and Vy will be described with reference to FIG. First, the sample is placed on the stage 6, the stage 6 is moved in the X direction at a speed of almost 0, and a 100-mesh first grid pattern is drawn on the sample. Next, set the stage 6 to 10 mm / s.
Move in the X direction at a speed of, and draw a similar 100-mesh second grid pattern on the same sample. Next, the shift amount of the intersection of the second lattice pattern with respect to the intersection of the first lattice pattern, that is, the stage 6 is moved at X at a speed of 10 mm / s.
In the X direction at the positions Px and Py when moving in the direction
The correction amount of the deflection amount in the Y direction is detected. Next, similarly to the above, the correction amounts of the deflection amounts in the X and Y directions at the positions Px and Py when the stage 6 is moved in the Y direction at a speed of 10 mm / s are detected. Further, in the same manner as described above, the stage 6 is set to 20 mm / s, 40 mm / s, 80 m.
A correction amount of the deflection amount in the X direction and the Y direction at the positions Px and Py when moving in the X direction and the Y direction at a speed of m / s and 160 mm / s is detected. Next, based on these detected values, a table of correction amounts of the deflection amount in the X direction at the positions Px and Py with respect to the speeds Vx and Vy and the speed Vx,
A table of the correction amount of the deflection amount in the Y direction at the positions Px and Py with respect to Vy is created.

In the electron beam drawing apparatus shown in FIGS. 1 and 2, the stage 6 on which the sample is placed is moved, and the electron beam 2 is deflected by the drawing deflector 3 to form a pattern on the sample. When drawing, the deflection amount of the electron beam 2 is corrected by the correction deflector 11 according to the positions Px, Py and the speeds Vx, Vy.

In such an electron beam drawing apparatus, the diameter of the objective lens 5 is increased, an eddy current is generated inside the stage 6, and the magnetic field generated by this eddy current causes
Even if the trajectory of the electron beam 2 is bent, the amount of deflection of the electron beam can be corrected according to the irradiation position error of the electron beam 2, so that high-speed and highly accurate drawing can be performed.

FIG. 4 is a block diagram showing a part of another electron beam drawing apparatus according to the present invention. In the figure, 18, 1
Denoted at 9 is a deflector control device for controlling the amount of deflection of the correction deflector 11 in the X and Y directions according to the positions Px, Py and the speed Vy. A table of correction amounts of the deflection amounts of Py in the X and Y directions is stored in advance. And
In this electron beam drawing apparatus, drawing is performed only when the stage 6 is moving in the Y direction, and the stage 6 is moved to the X direction.
When moving in the direction, drawing is not performed.

In this electron beam drawing apparatus, the storage capacity of the deflector control devices 18 and 19 is equal to that of the deflector control devices 9 and 10.
If the storage capacity is equal to
Since the table stored in 9 can be made more detailed than the tables stored in the deflector control devices 9 and 10, it can be corrected more accurately than the electron beam drawing apparatus shown in FIGS. Therefore, it is possible to perform drawing with higher accuracy.

FIG. 5 is a block diagram showing a part of another electron beam drawing apparatus according to the present invention. In the figure, 20, 2
Reference numeral 1 is a deflector control device for controlling the deflection amounts of the correction deflector 11 in the X and Y directions according to the velocity Vy. The deflector control devices 20 and 21 have deflection amounts in the X and Y directions with respect to the velocity Vy. A correction amount table of is stored in advance.
In this electron beam drawing apparatus, drawing is performed only when the stage 6 is moving in the Y direction, drawing is not performed when the stage 6 is moving in the X direction, and the material of the stage 6 is not used. The configuration is homogeneous for the positions Px, Py.

In this electron beam drawing apparatus, the storage capacity of the deflector control devices 20 and 21 is equal to that of the deflector control devices 18 and 1.
If the storage capacity is equal to 9, the deflector controller 20,
The table stored in 21 is the deflector control device 18, 1
Since the table can be made more detailed than the table stored in FIG. 9, the correction can be performed more accurately than the electron beam drawing apparatus shown in FIG. 4, so that drawing can be performed with extremely high accuracy.

FIG. 6 is a schematic view showing another electron beam drawing apparatus according to the present invention. In the figure, reference numeral 22 denotes a deflector control device for controlling the drawing deflector 3, and the deflector control device 22 has a table of correction amounts of deflection amounts in the X and Y directions at the positions Px and Py with respect to the speeds Vx and Vy. It is stored in advance, and the deflector controller 22 draws the drawing signal and the velocity V.
The drawing deflector 3 is controlled by a signal in which the signals of the correction amounts of the deflection amounts in the X and Y directions at the positions Px and Py with respect to x and Vy are superimposed.

In this electron beam drawing apparatus, the electron beam 2
The deflection amount is corrected in the drawing deflector 3 in accordance with the positions Px, Py and the speeds Vx, Vy.

Although the electron beam drawing apparatus has been described in the above embodiments, the present invention can be applied to other electron beam application apparatuses such as a pattern inspection apparatus and an operation test apparatus.

[0026]

As described above, in the electron beam application apparatus according to the present invention, even if the diameter of the objective lens is increased, the deflection amount of the electron beam is corrected according to the irradiation position error of the electron beam. Therefore, it is possible to perform drawing, detection, test, etc. at high speed and with high accuracy. As described above, the effect of the present invention is remarkable.

[Brief description of drawings]

FIG. 1 is a schematic view showing an electron beam drawing apparatus according to the present invention.

FIG. 2 is a block diagram showing a part of the electron beam drawing apparatus shown in FIG.

FIG. 3 is a diagram for explaining a method of creating a table of deflection amount correction amounts.

FIG. 4 is a block diagram showing a part of another electron beam drawing apparatus according to the present invention.

FIG. 5 is a block diagram showing a part of another electron beam drawing apparatus according to the present invention.

FIG. 6 is a schematic view showing another electron beam drawing apparatus according to the present invention.

FIG. 7 is a schematic view showing a conventional continuous movement type electron beam drawing apparatus.

8 is a schematic perspective view showing a part of the electron beam drawing apparatus shown in FIG.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 ... Electron source 2 ... Electron beam 3 ... Drawing deflector 5 ... Objective lens 6 ... Stage 7, 8 ... Detector 9, 10 ... Deflector control device 11 ... Correction deflector 18-21 ... Deflector control device 22 ... Deflector control device

Claims (4)

[Claims] 1. A continuous movement type electron beam application apparatus having an electron source, an objective lens that narrows down an electron beam emitted from the electron source, and a stage on which a sample is placed, and deflects the electron beam. A deflector; a detector for detecting the speed of the stage; and a deflector controller for controlling the deflection amount of the deflector according to the speed of the stage detected by the detector. Electron beam application device. 2. A detector that detects the position and speed of the stage is used as the detector, and the deflection amount of the deflector is adjusted according to the position and speed of the stage detected by the detector as the deflector control device. The electron beam application device according to claim 1, wherein a device for controlling is used. 3. The deflector control device, which stores a table of the deflection amount of the deflector with respect to the position and speed of the stage, is used.
Electron beam application apparatus according to. 4. The electron beam application apparatus according to claim 1, wherein the electron beam application apparatus is an electron beam drawing apparatus.