JPH07272994A - Signal detection method for charged particle beam lithography equipment - Google Patents

Abstract

PURPOSE:To realize a signal detection method for charged particle beam lithography equipment which can improve the accuracy of marking position detection after scaling and further improve the writing accuracy in the following process. CONSTITUTION:A scaling value S and electron beam sizes X2 and Y2 are set in a computer 11. The computer 11 controls variable resistors 22 and 23 of deflection amplifiers 16 and 18 and sets X2/S and Y2/S as beam size data for marking detection to be supplied by a data transfer circuit 13 and shot separator 14. As a result, when the data X2/S and Y2/S are to be passed through the amplifier 16, their amplification factors are controlled depending on the scaling value. Therefore, in the signals which are supplied to a forming deflector 5, the scaling value S component is cancelled and the signals become beam size signals X2 and Y2 which have not been scaled yet.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a charged particle beam drawing apparatus in which an electron beam or an ion beam is formed into a rectangular cross section and a beam having the rectangular cross section is projected onto a drawing material. Also, the present invention relates to a signal detection method when adjusting the positioning of a rectangular beam.

[0002]

2. Description of the Related Art As an electron beam drawing apparatus, an apparatus of a system that changes the cross section of an electron beam and draws is widely used. In this device, an electron beam is applied to the first aperture, and an aperture image of the first aperture is formed on the second aperture. Then, the projection position of the aperture image of the first aperture on the second aperture is changed by the deflector arranged between the first and second apertures, so that an electron having a rectangular cross section of an arbitrary area is obtained. The beam is shaped.

In such an electron beam drawing system,
When a pattern is drawn, the range (field) in which the electron beam can be deflected to be drawn at one time is limited. Therefore, the deflection of the electron beam and the movement of the stage on which the material to be drawn is placed are combined to achieve the desired overall chip. I am trying to draw. Therefore, adjustment (also referred to as calibration) of the stage movement amount and direction, the electron beam deflection amount and deflection direction, the electron beam size, and the like before writing is indispensable for performing accurate writing. Also, some of these calibrations need to be checked periodically. The alignment operation at the time of calibration and overlay drawing is mainly performed by detecting the position of the mark on the drawing material or the stage on which the material is placed by scanning the electron beam, or detecting the knife edge. This is done by scanning the electron beam across and detecting the electron beam passing through the knife edge.

On the other hand, in actual drawing, there is a demand for a function of drawing a pattern slightly larger or slightly smaller than a pattern based on designed data. This function is called scaling. In this case, there is no problem if the design data itself is scaled, but it is extremely troublesome and time-consuming to scale all the enormous design data. Therefore, the design data itself is not changed and a scaling function is added to the drawing device side.

The scaling function on the drawing apparatus side is performed by changing the deflection range of the electron beam, the amount of movement of the stage, and the size of the electron beam in terms of hardware or software. More specifically, the output voltages of the positioning deflector and the electron beam shaping deflector are changed in an analog manner according to the scaling amount. Also, the amount of movement of the stage is changed by software.

[0006]

When the scaling function described above is activated, if the output voltages of the electron beam positioning deflector and the electron beam shaping deflector are scaled as they are, the electron beam size will be reduced. It becomes large when the scaling is enlarged, and conversely becomes small when the scaling is reduced. Therefore, when calibration before drawing is performed for the stage movement amount and direction, the electron beam deflection amount and deflection direction, the electron beam size, and the like, the signal level at the time of mark detection increases or decreases. Therefore, the accuracy of various calibrations deteriorates, and as a result, the drawing accuracy thereafter is also adversely affected.

Furthermore, the calibration is performed by detecting the position of a mark provided on the drawing material or the stage, and this mark detection is performed in a state where scaling is applied. At this time, the speed at which the electron beam scans over the mark becomes faster with respect to the mark in the case of expansion scaling, and conversely becomes slower in the case of reduction scaling. This is because the electron beam is digitally scanned. That is, the time for moving the 1-point electron beam does not change, but the moving distance per 1-point changes according to the scaling value, and the scanning speed of the electron beam changes when viewed from the mark.

This point will be further described with reference to FIG. Figure 1
Here, M is a mark to be drawn or a mark provided on the stage, and the mark M is scanned with the electron beam EB. Incidentally, D is a positioning deflector. The deflection width of the electron beam for mark detection without scaling is W ₁ , and the electron beam at that time is shown by the solid line. On the other hand, during the expansion scaling, the deflection width is W ₂ , and the electron beam at that time is shown by the dotted line. Further, when the scaling is reduced, the deflection width is W ₃ , and the electron beam at that time is shown by the alternate long and short dash line.
In this way, the deflection width of the electron beam (scanning distance of the EB) changes to W ₁ , W ₂ and W ₃ due to scaling, but the deflection time is constant for any deflection width in this case. . As a result, the scanning speed changes due to the change in the deflection width.

In the mark detection, an electron beam is scanned across the mark and the reflected electrons and the like obtained at that time are detected. This backscattered electron detection signal is supplied to a differentiating circuit and subjected to signal processing such as differentiating processing. However, if the scanning speed of the electron beam changes, the signal level of the differentiating signal changes accordingly. Therefore, an error in mark detection may occur or the detection accuracy may deteriorate.

The present invention has been made in view of the above point, and an object thereof is to improve the accuracy of mark position detection and the like when scaling is performed, and to improve the drawing accuracy thereafter. It is to realize a signal detection method in a beam drawing apparatus.

[0011]

According to the present invention, an aperture image of a first aperture is deflected by a shaping deflector to form an image on a second aperture, and a rectangular cross section transmitted through the aperture of the second aperture. The charged particle beam is deflected by the positioning deflector to project it at a desired position on the material to be drawn, and the scaling is performed by a deflection amplifier for amplifying the deflection signal supplied to the shaping deflector and a deflection signal supplied to the positioning deflector. In a charged particle beam drawing apparatus that is configured to change the amplification factor of a deflection amplifier that amplifies, a charged particle beam having a rectangular cross section is scanned at a mark portion, and the signal obtained based on this scanning is detected and detected. When the signal is differentiated to detect the mark position and the cross-sectional shape of the rectangular beam, the beam sensor supplied to the deflection amplifier for the shaping deflector at the time of detecting the signal. It is characterized in that so as to multiply the reciprocal of the scaling value for the signal corresponding to's.

Further, according to the present invention, the step time interval of the stepwise scanning signal supplied to the deflection amplifier for the positioning deflector at the time of detecting the signal is changed in accordance with the scaling value, or in the process of differentiating the signal, The feature is that the amplification factor of the amplifier circuit is changed according to the scaling value.

Further, in the present invention, the signal corresponding to the beam size supplied to the deflection amplifier for the shaping deflector at the time of signal detection is multiplied by the reciprocal of the scaling value, and the beam size in the direction perpendicular to the beam scanning direction is obtained. Is characterized by changing according to scaling.

[0014]

According to the present invention, a charged particle beam having a rectangular cross section is scanned at a mark portion or the like, a signal obtained based on this scanning is detected, and the detected signal is subjected to differential processing to obtain a mark position, a rectangular beam cross sectional shape, or the like. In the above method, the signal corresponding to the beam size supplied to the deflection amplifier for the shaping deflector at the time of detecting the signal is multiplied by the reciprocal of the scaling value.

[0015]

Embodiments of the present invention will now be described in detail with reference to the drawings. FIG. 2 shows an example of a variable area electron beam drawing apparatus for carrying out the method of the present invention. Reference numeral 1 denotes an electron gun that generates an electron beam EB. The electron beam EB generated from the electron gun 1 passes through an illumination lens 2 to a first
It is irradiated onto the shaping aperture 3. The aperture image of the first shaping aperture is imaged on the second shaping aperture 6 by the shaping lens 4, and the position of the image is the shaping deflector 5.
Can be changed by. The image formed by the second forming aperture 6 is projected onto the drawing material 10 via the reduction lens 7 and the objective lens 8. The irradiation position on the drawing material 10 can be changed by the positioning deflector 9.

Reference numeral 11 is a computer, and the computer 11 transfers the pattern data from the pattern data memory 12 to the data transfer circuit 13. Data transfer circuit 1
The pattern data from 3 is supplied to the shot divider 14 and divided into shots. A signal corresponding to the drawing data from the shot divider 14 is supplied to the deflection amplifier 16 via the DA converter 15 and the deflection amplifier 1 via the DA converter 17.
8. A blanking control circuit 21 for controlling a blanking electrode 20 for blanking the electron beam generated from the electron gun 1 via the DA converter 19 is supplied.

The output voltage of the deflection amplifier 16 is supplied to the shaping deflector 5, and the output voltage of the deflection amplifier 18 is supplied to the positioning deflector 9. Reference numerals 22 and 23 are variable resistors for changing the amplification factors of the deflection amplifiers 16 and 18, respectively, and the resistance values thereof are controlled by the computer 11.

Further, the computer 11 controls the drive mechanism 25 of the stage 24 on which the material 10 is placed in order to move the material field by field. The moving amount of the stage 24 is measured by the laser length measuring device 26, and the measurement result is supplied to the computer 11. Irradiation of the material 10 with the electron beam EB generates secondary electrons and backscattered electrons. For example, the backscattered electrons are a pair of backscattered electron detectors 27.
Detected by. The detection signal of the backscattered electron detector 27 is added by the adder 28, differentiated by the first differentiating circuit 29 and the second differentiating circuit 30, and then supplied to the gate signal generator 31. The operation of such a configuration will be described below.

First, a normal drawing operation will be described.
The pattern data stored in the pattern data memory 12 is sequentially read and supplied to the shot divider 14 via the data transfer circuit 13. Based on the data divided by the shot divider 14, the electron beam shaping data is DA
The signal is supplied to the deflection amplifier 16 via the converter 15, and the signal amplified by the amplifier 16 is supplied to the shaping deflector 5. Further, the deflection signal of the electron beam according to the drawing pattern is supplied to the deflection amplifier 18 via the DA converter 17, and the signal amplified by the amplifier 18 is supplied to the positioning deflector 9.

As a result, based on the divided pattern data, the shaping deflector 5 shapes the cross section of the electron beam into a rectangular shape having a desired area, and the beam having the rectangular cross section is supplied to the positioning deflector 9. Shots are sequentially shot on the material in accordance with the deflection signal, and a pattern having a desired shape is drawn. At this time, the blanking signal from the blanking control circuit 21 to the blanking electrode 20 causes the blanking of the electron beam in synchronization with the shot of the electron beam on the material 10.

Further, the drawing operation by deflecting the electron beam is carried out in units of fields. After the drawing in a specific field is completed, the stage 24 is moved by the drive mechanism 25 by the length of the field, and The field is drawn. The moving amount of the stage 24 is measured by the laser length measuring device 26, and the measured value is supplied to the computer 11. The computer 11 controls the drive mechanism 25 on the basis of the measured movement amount to enable accurate movement of the stage 24.

Next, when scaling the pattern,
Under the control of the computer 11, the resistance value of the variable resistor 22 of the deflection amplifier 16 and the resistance value of the variable resistor 23 of the deflection amplifier 18 are changed according to the scaling. For example, in the case of enlarging scaling, the amplification factors of the deflection amplifiers 22 and 23 are controlled to be high, and conversely, in the case of reducing scaling, the amplification factors of the deflection amplifiers 22 and 23 are controlled to be low. To be done.

Next, the calibration operation of the apparatus, which is performed prior to the above-described drawing operation, will be described.
For example, when adjusting the amplification factor of the deflection amplifier 18 for the positioning deflector 9, a cross mark provided on the stage 24 is positioned at one end of the field. Then, the positioning deflector 9 deflects the electron beam to the mark portion, and the electron beam is scanned at that portion to detect the position of the mark. Mark position detection, as is well known,
The electron beam is repeatedly scanned at the mark portion, and the reflected electrons generated as a result are detected. The backscattered electrons are detected by the detector 27, and the detection signals thereof are added by the adder 28 and supplied to the first differentiating circuit 29.

FIG. 3 shows the detection signal waveform.
(A) shows the added backscattered electron signal. This signal is differentiated by the first differentiating circuit 29, as shown in FIG.
The signal of (b) is obtained. The signal of FIG. 3 (b) is further differentiated by the second differentiating circuit 30 to obtain the signal of FIG. 3 (c). The signal in FIG. 3C is the gate signal generator 3
1 and the signal of FIG. 3 (d) is obtained. The output signal of the gate signal generator 31 is supplied to the computer 11, and the mark position is detected based on the gate signal.

After confirming the position of the mark located at one end of the field by deflecting the electron beam, the stage 2
4 is moved by the field. Also in this case, the moving amount is accurately controlled by the laser length measuring device 26. As a result, the mark is also moved by the length of the field, and when viewed from the electron beam, the mark is located at the other end of the field. In this state, the electron beam is deflected again to the mark portion by the positioning deflector 9, and the electron beam is further scanned in that portion to detect the mark position.

Thus, the length of the field obtained from the position information of the marks at one end and the other end of the field detected by the deflection of the electron beam and the accurate movement of the stage 24 controlled by the laser length measuring device 26. Based on the quantity, the amplification factor of the deflection amplifier 18 for amplifying the deflection signal supplied to the positioning deflector 9 is adjusted. By this adjustment, the deflection amount of the electron beam becomes accurate.

If scaling is performed when adjusting the amplification factor of the amplifier 18, the scanning width of the electron beam at the time of mark detection is supplied from the deflection amplifier 18 to the positioning deflector 9. It changes as the output voltage changes. The size of the rectangular electron beam used for scanning also changes with the change in the voltage supplied from the deflection amplifier 16 to the shaping deflector 5. For example, when reduction scaling is performed, the rectangular size of the electron beam becomes smaller, so the signal for backscattered electron detection also becomes smaller, and the signal level changes, making measurement difficult, or measuring accuracy The worsening was mentioned earlier.

For this reason, in the present embodiment, when scaling is applied, the electron beam rectangular size data (signal supplied to the deflection amplifier 16) used for calibration is used as an electron beam used when scaling is not applied. The beam size data obtained by multiplying the size by the reciprocal of the scaling value is used. FIG. 4 shows a flowchart of processing for scaling and performing mark detection for calibration.

First, in the computer 11, the scaling value S and the size X ₂ of the electron beam for mark detection are calculated.
Y ₂ is set. Next, the computer 11 determines the deflection amplifiers 16 and 18 based on the applied scaling value.
The variable resistors 22 and 23 of are controlled. Finally, via the data transfer circuit 13 and the shot divider 14, the deflection amplifier 1
X ₂ / S and Y ₂ / S are set as the mark detection beam size data supplied to No. 6. As a result, since the beam size data X ₂ / S and Y ₂ / S have their amplification factors controlled in accordance with the scaling value S when passing through the deflection amplifier 16, the signals supplied to the shaping deflector 5 are controlled. Becomes the beam size signals X ₂ and Y _{2 in a} state where the scaling value S component is canceled and scaling is not applied.
After such setting, the mark detection operation is executed.

For example, when a 0.8 μ reduction scaling is applied to a beam size of 4 μm, a signal of 3.2 μm is obtained by passing through the deflection amplifier 16 as it is, but a signal of 4 μm / 0. Since the data of 8 is created and supplied to the deflection amplifier 16, a signal corresponding to 4 μm is actually supplied to the shaping deflector 5. As a result, the level of the signal detected by the backscattered electron detector 27 can always be constant regardless of scaling. Therefore, the measurement does not become difficult, and the accuracy of mark detection can be stably maintained.

Now, by applying scaling,
As described above, when the mark is detected, the scanning speed of the electron beam with respect to the mark changes, and when the mark detection signal is differentiated, the signal level after the differentiation changes. An embodiment for solving this problem is shown in FIG. In this figure, the mark scanning signal generator 3
2 generates a stepwise mark scanning signal by the clock signal from the reference clock generator 33. This scanning signal is supplied to the positioning deflector 9 via the DA converter 17 and the deflection amplifier 18. That is, the scanning speed of the electron beam is determined by the clock signal generation timing. The clock signal of the reference clock generator 33 is modulated in clock time by the clock signal modulation circuit 34. The clock signal modulation circuit 34 is controlled by the computer 11, and the time interval of the clock is changed according to the scaling value. The mark scanning signal generator 32, the clock generator 33, and the clock signal modulation circuit 34 may be included in the computer 11 or the data transfer circuit 12 in the embodiment of FIG. May be. Furthermore, these circuits may be provided independently.

The operation of the above configuration will be described with reference to the flowchart of FIG. First, the scaling value S and the scanning speed v of the electron beam are set in the computer 11.
After that, scaling is applied to the deflection amplifiers 16 and 18.
The variable resistors 22 and 23 are adjusted according to the scaling value S. The interval of the clock signal from the clock signal generator 33 corresponds to the scanning speed v of the electron beam, and this clock signal is supplied to the clock signal modulation circuit 34. Under the control of the computer 11, the clock signal modulation circuit 34 modulates the clock signal from the clock signal generator 33 based on the signal corresponding to the scaling value S so that the signal interval corresponds to v / S. multiply. The mark scanning signal generator 32 generates an electron beam scanning signal in accordance with the modulated clock signal.

The scanning signal from the mark scanning signal generator 32 is supplied to the deflection amplifier 18 via the DA converter 17, and this signal becomes a signal for scanning the electron beam in steps. The speed of the scanning signal supplied to the deflection amplifier 18 is v / S as described above. In the process in which the signal of this speed is amplified by the deflection amplifier 18, it is converted by the scaling value S. That is, the scanning speed of the signal having the speed of v / S becomes (v / S) × S by passing through the deflection amplifier 18, and the scanning speed seen from the mark of the scanning signal supplied to the positioning deflector 9 is v. As a result, the scanning speed of the electron beam at the time of mark detection is always constant regardless of the scaling value, the signal level does not change even if the reflected electron detection signal is differentiated, and the mark detection accuracy is significantly improved. Can be made.

Since the signal level is always made constant by the differentiation processing of the mark detection signal regardless of the scaling value, the scanning speed of the mark scanning signal from the mark scanning signal generator 32 is preset to the scaling value in the embodiment of FIG. However, the level of the differential signal can be made constant in addition to such a system. For example, in the embodiment of FIG. 2, the amplification factor of the amplification circuit included in the first differentiating circuit 29 or the second differentiating circuit 30 from the computer 11 may be changed. That is, it is checked in advance how much the differential signal level changes due to the change in the scanning speed for the mark depending on the scaling value, and the amplification factor of the amplification circuit in the differentiation circuit is changed according to the set scaling value. The differential signal level is constant regardless of the scaling value. In addition, in order to keep the differential signal level constant, the amplification factor of the amplifier circuit inside the first differentiating circuit 29 or the second differentiating circuit 30 may be changed,
Further, the adder circuit 28 and other detection circuit amplification circuits may be controlled.

Further, in addition to the method of adjusting the signal intensity according to the scaling value in the process of processing the mark detection signal, a method of changing the shape of the rectangular beam used for mark detection according to the scaling value is used. May be. This method will be described based on the flowchart of FIG.

First, the scaling value S, the beam size change ratio Bs when the scaling value is S, and the beam sizes X ₂ and Y ₂ at the time of mark detection are set. Next, scaling is applied and the mark detection operation is started. At this time, the beam size for scanning in the X direction is X ₂ =
X ₂ and Y ₂ = Bs × Y ₂ . Therefore, at the time of expansion scaling, that is, when the beam scanning speed becomes high, the differential signal level becomes high accordingly, so that the beam size in the Y direction is narrowed. On the other hand, at the time of reduction scaling, that is, when the beam scanning speed becomes slower, the differential signal level becomes lower accordingly, so that the beam size in the Y direction is made wider. In this way, after changing the beam size, EB scanning is performed on the cross mark M as in Bx as shown in FIG.

Next, for the cross mark M in FIG.
When the electron beam is scanned in the Y direction as described above, the beam size is X ₂ = Bs × X ₂ and Y ₂ = Y ₂ .
Therefore, at the time of expansion scaling, that is, when the beam scanning speed becomes faster, the differential signal level becomes higher accordingly, so that the beam size in the X direction is narrowed. on the other hand,
At the time of reduction scaling, that is, when the beam scanning speed becomes slower, the differential signal level becomes lower accordingly, so that the beam size in the X direction is made wider.

It should be noted that, at the time of this mark scanning, only the method of canceling the change in the differential signal level due to scaling was mentioned for the sake of simplicity. Actually, as described in the flowchart of FIG. 4, in order to cancel the change in the beam size due to the scaling, the scaling value is applied to the signal according to the beam size supplied to the deflection amplifier 16 for the shaping deflector 5. It is necessary to multiply by the reciprocal of.

Although the embodiment of the present invention has been described above, the present invention is not limited to this embodiment. For example, although the variable area type electron beam writing apparatus has been described as an example, the present invention can be applied to an ion beam writing apparatus. Further, although the case of mark detection has been described in detail, the present invention can be applied to a case where a knife edge is provided, a beam passing through the opening of the knife edge is detected by a Faraday cup, and the shape of the beam is measured. Further, although the backscattered electrons are detected, secondary electrons generated by irradiation of an electron beam other than the backscattered electrons may be detected, for example.

[0040]

As described above, according to the present invention, a charged particle beam having a rectangular cross section is scanned at a mark portion or the like, a signal obtained based on this scanning is detected, a detection signal is differentiated, and a mark is obtained. In the method of detecting the position and the cross-sectional shape of the rectangular beam, the signal corresponding to the beam size supplied to the deflection amplifier for the shaping deflector is multiplied by the reciprocal of the scaling value when the signal is detected. As a result, the level of the detection signal can always be constant regardless of scaling. Therefore, the measurement does not become difficult, and the accuracy of mark detection can be stably maintained, and as a result, the drawing accuracy can be improved.

Further, in the process of changing the step time interval of the stepwise scanning signal supplied to the deflection amplifier for the positioning deflector at the time of signal detection or according to the differentiation processing, the amplification of the signal amplification circuit is performed. Since the rate is changed according to the scaling value, the scanning speed at the time of mark detection etc. is always constant regardless of the scaling value, and it changes to the signal level even if the reflected electron detection signal is differentiated. Therefore, the accuracy of mark detection can be significantly improved.

Further, the signal corresponding to the beam size supplied to the deflection amplifier for the shaping deflector at the time of signal detection is multiplied by the reciprocal of the scaling value, and the beam size in the direction perpendicular to the beam scanning direction is scaled. Since the scanning speed at the time of mark detection is always constant regardless of the scaling value, the signal level does not change even if the reflected electron detection signal is differentiated.

[Brief description of drawings]

FIG. 1 is a diagram for explaining a relationship between a beam deflection width and scaling when detecting a mark position.

FIG. 2 is a diagram showing an example of an electron beam writing system for carrying out the present invention.

FIG. 3 is a diagram showing a mark detection signal waveform.

FIG. 4 is a diagram showing a flowchart of an embodiment of the present invention.

FIG. 5 is a diagram showing a main part of a configuration for carrying out another embodiment of the present invention.

6 is a diagram showing a flowchart of the operation of the embodiment of FIG.

FIG. 7 is a diagram showing a flowchart of the operation of another embodiment of the present invention.

FIG. 8 is a diagram showing a state of mark scanning in the embodiment of FIG.

[Explanation of symbols]

 1 electron gun 2 illumination lens 3,6 shaping aperture 4 shaping lens 5,9 deflector 7 reduction lens 8 objective lens 10 material 11 computer 12 memory 13 data transfer circuit 14 shot divider 15, 17, 19 DA converter 16, 18, Deflection amplifier 20 Blanking electrode 21 Blanking control circuit 22,23 Variable amplifier 24 Stage 25 Driving mechanism 26 Laser length measuring device 27 Reflection electron detector 28 Adder 29, 30 Differentiating circuit 31 Gate signal generator

Claims (4)

[Claims] 1. An aperture image of a first aperture is deflected by a shaping deflector to form an image on a second aperture, and a charged particle beam having a rectangular cross section that has passed through the aperture of the second aperture is deflected by a positioning deflector. Amplification factors of the deflection amplifier that amplifies the deflection signal supplied to the shaping deflector and the deflection amplifier that amplifies the deflection signal supplied to the shaping deflector while deflecting and projecting at a desired position on the material to be drawn In the charged particle beam drawing apparatus, which is configured to be changed, the charged particle beam having a rectangular cross section is scanned at the mark portion, the signal obtained based on this scanning is detected, the detection signal is differentiated, and the mark position is detected. When detecting the cross-sectional shape of a rectangular beam or a rectangular beam, a signal corresponding to the beam size supplied to the deflection amplifier for the shaping deflector at the time of detecting the signal is used for the scale. Signal detection method in a charged particle beam drawing apparatus, characterized in that it is multiplied by the reciprocal of the ring value. 2. The signal detection method in a charged particle beam drawing apparatus according to claim 1, wherein the beam size in a direction perpendicular to the beam scanning direction is changed according to scaling. 3. A charged particle beam having a rectangular cross section transmitted through the aperture of the second aperture is deflected by a shaping deflector to form an image on the second aperture by deflecting the aperture image of the first aperture by the positioning deflector. Amplification factors of the deflection amplifier that amplifies the deflection signal supplied to the shaping deflector and the deflection amplifier that amplifies the deflection signal supplied to the shaping deflector while deflecting and projecting at a desired position on the material to be drawn In the charged particle beam drawing apparatus, which is configured to be changed, the charged particle beam having a rectangular cross section is scanned at the mark portion, the signal obtained based on this scanning is detected, the detection signal is differentiated, and the mark position is detected. When detecting the cross-sectional shape of a rectangular beam, a step-like scanning signal supplied to the deflection amplifier for the positioning deflector at the time of detecting the signal, A signal detection method in a charged particle beam drawing apparatus, characterized in that an interval is changed according to a scaling value. 4. An aperture image of the first aperture is deflected by a shaping deflector to form an image on the second aperture, and a charged particle beam of rectangular cross section which has passed through the aperture of the second aperture is deflected by a positioning deflector. Amplification factors of the deflection amplifier that amplifies the deflection signal supplied to the shaping deflector and the deflection amplifier that amplifies the deflection signal supplied to the shaping deflector while deflecting and projecting at a desired position on the material to be drawn In the charged particle beam drawing apparatus, which is configured to be changed, the charged particle beam having a rectangular cross section is scanned at the mark portion, the signal obtained based on this scanning is detected, the detection signal is differentiated, and the mark position is detected. When detecting the cross-sectional shape of a rectangular beam or
A signal detection method in a charged particle beam drawing apparatus, wherein an amplification factor of a signal amplification circuit is changed according to a scaling value.