JPH0587130B2 - - Google Patents
Info
- Publication number
- JPH0587130B2 JPH0587130B2 JP62076384A JP7638487A JPH0587130B2 JP H0587130 B2 JPH0587130 B2 JP H0587130B2 JP 62076384 A JP62076384 A JP 62076384A JP 7638487 A JP7638487 A JP 7638487A JP H0587130 B2 JPH0587130 B2 JP H0587130B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- gas
- plasma
- reaction chamber
- plasma vapor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Photovoltaic Devices (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62076384A JPS63244731A (ja) | 1987-03-31 | 1987-03-31 | プラズマ気相成長装置 |
US07/166,689 US4920917A (en) | 1987-03-18 | 1988-03-11 | Reactor for depositing a layer on a moving substrate |
DE3808974A DE3808974A1 (de) | 1987-03-18 | 1988-03-17 | Anordnung zum abscheiden einer materialschicht auf einem bewegten traeger |
FR8803589A FR2613535B1 (fr) | 1987-03-18 | 1988-03-18 | Reacteur permettant de faire deposer une couche sur un substrat mobile pour la fabrication d'un dispositif semiconducteur |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62076384A JPS63244731A (ja) | 1987-03-31 | 1987-03-31 | プラズマ気相成長装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS63244731A JPS63244731A (ja) | 1988-10-12 |
JPH0587130B2 true JPH0587130B2 (enrdf_load_stackoverflow) | 1993-12-15 |
Family
ID=13603840
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62076384A Granted JPS63244731A (ja) | 1987-03-18 | 1987-03-31 | プラズマ気相成長装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS63244731A (enrdf_load_stackoverflow) |
-
1987
- 1987-03-31 JP JP62076384A patent/JPS63244731A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS63244731A (ja) | 1988-10-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4920917A (en) | Reactor for depositing a layer on a moving substrate | |
US5968274A (en) | Continuous forming method for functional deposited films and deposition apparatus | |
EP0041773B1 (en) | Solar cell production | |
US4519339A (en) | Continuous amorphous solar cell production system | |
KR100269929B1 (ko) | 박막 제조방법 및 증착장치 | |
US4462333A (en) | Process gas introduction, confinement and evacuation system for glow discharge deposition apparatus | |
SE8301364L (sv) | Sett och apparat for framstellning av amorfa fotovoltiska celler | |
US4537795A (en) | Method for introducing sweep gases into a glow discharge deposition apparatus | |
WO2002058121A1 (fr) | Procede et dispositif pour depot chimique en phase vapeur assiste par plasma | |
US4520757A (en) | Process gas introduction, confinement and evacuation system for glow discharge deposition apparatus | |
EP3811395B1 (en) | Plasma source and method of operating the same | |
US4479455A (en) | Process gas introduction and channeling system to produce a profiled semiconductor layer | |
EP2256782B1 (en) | Plasma deposition source and method for depositing thin films | |
US4742012A (en) | Method of making graded junction containing amorphous semiconductor device | |
US4608943A (en) | Cathode assembly with localized profiling capabilities | |
JPH0587130B2 (enrdf_load_stackoverflow) | ||
US20060219170A1 (en) | Pore cathode for the mass production of photovoltaic devices having increased conversion efficiency | |
US20040250763A1 (en) | Fountain cathode for large area plasma deposition | |
JP2771363B2 (ja) | 機能性堆積膜の連続的製造装置 | |
JPH0719912B2 (ja) | 薄膜半導体の製造装置 | |
EP0106521B1 (en) | Baffle system for glow discharge deposition apparatus | |
JPH0227775A (ja) | 太陽電池の製造装置 | |
JP3403039B2 (ja) | プラズマcvd法による薄膜半導体の作製装置及び作製方法 | |
JP3181761B2 (ja) | 機能性堆積膜の連続的形成方法及び堆積装置 | |
JP3403001B2 (ja) | プラズマcvd法による薄膜半導体の作製装置及び作製方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
LAPS | Cancellation because of no payment of annual fees |