JPH0585496B2 - - Google Patents

Description

[Detailed description of the invention]

[Industrial Application Field] This invention relates to an insulating ceramic composition used as a material for multilayer wiring boards and the like. [Prior Art] Conventionally, alumina-based ceramic compositions with excellent insulation properties have been mainly used as materials for multilayer circuit boards. This porcelain composition contains approximately ₉₆ % _Al2O3 powder,
It is obtained by firing a porcelain raw material made of powder such as SiO ₂ , MgO, CaO, etc. at a temperature of 1500 to 1600°C in a reducing atmosphere. Furthermore, a conductive paste mainly composed of Mo or W is used to print conductors inside the substrate. [Problems to be solved by the invention] The conventional alumina porcelain composition described above has a large thermal expansion coefficient of 7.5×10 ^-6 /°C (linear expansion coefficient) or more, so it is susceptible to thermal shock, and the multilayers made from it are susceptible to thermal shock. The drawback was that cracks would occur if the circuit board was subjected to a thermal shock with a temperature difference of several tens of degrees or more. Therefore, when soldering electronic components to a multilayer wiring board, it is necessary to perform a so-called preheating process in which the board is slowly heated over a period of time to a temperature close to the melting temperature of the solder. This invention was made to solve the above-mentioned problems with conventional alumina-based insulating porcelain compositions, which have a smaller coefficient of thermal expansion than conventional porcelain compositions, and which are less susceptible to thermal shock caused by soldering electrical parts. An object of the present invention is to provide an insulating ceramic composition that is less likely to cause damage such as cracks to a multilayer wiring board. [Means for solving the problem] The insulating porcelain composition of the present invention contains Al ₂ O ₃ from 20 to 20%.
70% by weight, 10-55% by weight of SiO ₂ and ₃ % by weight of B ₂ O 3
~30% by weight, 0.1-3% by weight of Li ₂ O, CaO,
1 to 40% by weight of one or more selected from the group of SrO, BaO, ZnO, Mn ₃ O ₄ , Co ₃ O ₄ , NiO,
0.5 to 10 of one or more selected from the CuO group
It is made by baking a mixture of % by weight in an oxidizing atmosphere. [Examples] Examples of the present invention will be described below. First, to explain the manufacturing method and conditions for each sample listed in the table below, using Sample 1 as an example, 40.0g of Al ₂ O ₃ powder, 10.0g of SiO ₂ powder, and 30.0g of B ₂ O ₃ powder.
g, 0.25 g of Li ₂ CO ₃ powder, 17.8 g of CaCO ₃ powder,
6.32 g of BaCO ₃ powder and 5.0 g of Mn ₃ O ₄ powder were weighed. The Li, Ca, and Ba carbonate powders used were all stable in the air. The above powders were wet mixed by placing them in a ball mill and ball milling for about 15 hours. Next, to the above mixed powder, 8% by weight of polyvinyl butyral resin and 8% by weight of dibutyl phthalate were added.
wt%, acetone 40 wt%, oleic acid 0.5
A slurry was prepared by adding each weight percent at a time and stirring. Next, this slurry was drawn by a doctor blade method to produce a long unsintered porcelain sheet with a thickness of 0.25 mm, which was cut into 10 cm squares. Then, from the cut unsintered porcelain sheets, the following 3
I made various test pieces. The first test piece was obtained by punching out the above sheet into a disk shape with a diameter of 16 mm. The second test piece was made by stacking and crimping 17 of the above sheets, with a length of 36 mm and a width of 4 mm.
It is cut to a size of mm, and its thickness is approximately 4 mm. The third test piece is Pd on the sheet above.
A wiring pattern was printed using a conductive paste whose main ingredient was
mm, cut to 15 mm wide, and approximately 1.5 mm thick. These test pieces were fired in a profile in which the temperature was raised to 1150°C at a rate of 100°C/hour in air, this temperature was maintained for 2 hours, and then cooled to room temperature at a rate of 200°C/hour. Subsequently, the fired test pieces were tested in the following manner. For the first disk-shaped test piece, In-Ga alloy was applied to both main surfaces, electrodes with a diameter of 10 mm were provided, and the relative permittivity ε, quality factor Q, and resistivity ρ (Ωcm) were determined. It was measured. The relative dielectric constant ε is
It was calculated from the capacitance measured at a frequency of 1 MHz at a temperature of 25° C., and Q was measured under the same conditions as the capacitance described above. Further, the resistivity ρ was calculated from the insulation resistance value 60 seconds after applying a DC voltage of 500V. Regarding the second test piece made by laminating 17 porcelain sheets, the coefficient of linear expansion α (/°C) at a temperature of 20 to 500°C was measured. The third test piece, on which the Pd wiring pattern was printed, was immersed in molten solder at room temperature to 250°C for 3 seconds without preheating, then pulled out, allowed to cool naturally to room temperature, and checked for cracks, etc. Examined. Furthermore, using this test piece, the light-shielding properties were examined by determining whether the internal wiring pattern was visible to the naked eye. Those that could not be seen through were considered to have good light-shielding properties, and those that could be seen through were judged to have poor light-shielding properties. Hereinafter, for Samples 2 to 53, three types of test pieces were made from the porcelain compositions having the compositions shown in each column of the table below, and each test piece was tested in the same manner and under the same conditions as Sample 1. However, the firing temperature FT is
Each test was conducted at a different temperature as shown in each column of the attached table. As is clear from the table below, these samples 1 to 53 have a firing temperature FT of 950 to 1250℃ and a linear expansion coefficient α
was 3.0 to 6.0×10 ^-6 /°C. In addition, no cracks were observed in any of them in the immersion test in molten solder, and the light shielding properties were also good. Although specific numerical values are omitted in the table below, the dielectric constant ε of these samples is 6 to 9, Q is 500 to 2000, and resistivity ρ is 1 × 10 ¹³ to 5 × 10 ¹⁴ Ωcm. Ta. In addition, for comparison with the above examples, three types of test pieces were made from porcelain compositions that did not meet the compositional requirements of the present invention, such as Sample Nos. 54 to 65 in the following table. And for each of them, the sample
Tests were conducted using the same method and conditions as Nos. 1 to 53, and the results are shown in the columns of Samples Nos. 54 to 65 in the table along with the firing temperature FT.

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〔Effect of the invention〕

As explained above, the insulating porcelain composition of the present invention has a small linear expansion coefficient α of 3.0 to 6.0×10 ^-6 /°C.
is obtained. Therefore, multilayer circuit boards made from this porcelain composition are susceptible to thermal shock caused by a temperature difference of about 230°C, which is normally experienced during the soldering process of electronic components.
Cracks do not occur. Thereby, when soldering electronic components to a multilayer wiring board, it is possible to omit a preheating step that is conventionally required.

Claims (1)

[Claims] 1 20-70% by weight _{of Al2O3} , 10-55% by weight of _SiO2 , 3-30% by weight of _B2O3 , 0.1-3% by weight of _{Li2O ,} CaO, SrO, 1 to 40% by weight of one or more selected from the group of BaO, ZnO, Mn ₃ O ₄ ,
A mixture of one or more selected from the group of Co ₃ O ₄ , NiO, CuO at a ratio of 0.5 to 10% by weight,
An insulating porcelain composition fired in an oxidizing atmosphere.