JPH0582606A - Semiconductor integrated circuit testing device - Google Patents

Semiconductor integrated circuit testing device

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Publication number
JPH0582606A
JPH0582606A JP3240037A JP24003791A JPH0582606A JP H0582606 A JPH0582606 A JP H0582606A JP 3240037 A JP3240037 A JP 3240037A JP 24003791 A JP24003791 A JP 24003791A JP H0582606 A JPH0582606 A JP H0582606A
Authority
JP
Japan
Prior art keywords
frequency
circuit
signal
trigger signal
semiconductor integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP3240037A
Other languages
Japanese (ja)
Inventor
Akifumi Muto
明文 武藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP3240037A priority Critical patent/JPH0582606A/en
Publication of JPH0582606A publication Critical patent/JPH0582606A/en
Withdrawn legal-status Critical Current

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  • Testing Of Individual Semiconductor Devices (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

PURPOSE:To eliminate the restriction of trigger frequency and improve operability by providing a function for measuring the frequency of a trigger signal in synchronism with the operation of a sample and an automatic dividing function. CONSTITUTION:The device is provided with a frequency measuring means 3 which operates in synchronism with the operation of a sample 1 to be measured, a dividing rate deciding means 5, a programmable dividing means 7, a programmable delay circuit 9 which delays a divided trigger signal 57 based on the set value and a detecting means 11 which detects a secondary element for electronic beams and that detects polarized light caused by electro-optic effects for optical beams in synchronism with the delayed trigger signal 59. The dividing rate deciding means 5 decides a dividing rate which permits the frequencies of the device constituting elements to be lower than normal operation frequencies and that permits maximum frequencies within a rang that permits the detecting means 11 to classify a signal from a sample 1 according to the time. Thus, the device which eliminates the troubles of the operating frequencies and the dividing function and that automatically divides so as to permit the maximum frequencies with excellent operability is provided.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は電子ビーム或いは光ビー
ムを用いて半導体集積回路等の被験試料の内部動作状態
を測定する電子ビーム装置或いは光ビームサンプリング
装置等の半導体集積回路試験装置に係り、特にトリガ周
波数の測定自動分周機能を備えた高い操作性を有する半
導体集積回路試験装置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor integrated circuit testing device such as an electron beam device or an optical beam sampling device for measuring the internal operating state of a test sample such as a semiconductor integrated circuit using an electron beam or a light beam, In particular, the present invention relates to a semiconductor integrated circuit test apparatus having a trigger frequency measurement automatic frequency division function and high operability.

【0002】電子ビーム装置は、走査形電子顕微鏡(S
EM)で観測される電位コントラスト(表面電位に応じ
て現われるSEM画像上のコントラスト)を利用し、半
導体集積回路内部の配線電位を直接測定する装置であ
り、測定しようとする半導体集積回路等の試料の動作に
同期したトリガ信号を基準として、プログラマブル遅延
回路により位相を制御してサンプリングし、加算平均す
ることにより測定を行なう。
An electron beam apparatus is a scanning electron microscope (S
EM) is a device that directly measures the wiring potential inside a semiconductor integrated circuit using the potential contrast (contrast on the SEM image that appears according to the surface potential), and is a sample of the semiconductor integrated circuit to be measured. Measurement is performed by controlling the phase by a programmable delay circuit, sampling, and averaging based on the trigger signal synchronized with the operation of.

【0003】このトリガ信号の周波数は測定する対象、
試験条件、及びテストパターンによって異なる。一般に
トリガ信号が高い程、電子ビーム装置の測定に要する時
間は短くなるが、サンプリング回路のサンプリング周波
数の上限、二次電子信号増幅回路の帯域幅、加算平均回
路の加算周波数の上限、並びにプログラマブル遅延回路
の動作周波数の上限といった制約を満たしたものでなけ
ればならない。
The frequency of the trigger signal is to be measured,
Depends on test conditions and test patterns. Generally, the higher the trigger signal, the shorter the time required for the measurement of the electron beam device, but the upper limit of the sampling frequency of the sampling circuit, the bandwidth of the secondary electron signal amplification circuit, the upper limit of the addition frequency of the averaging circuit, and the programmable delay. It must satisfy the constraints such as the upper limit of the operating frequency of the circuit.

【0004】また、光ビームサンプリング装置について
もこれと同様である。
The same applies to the light beam sampling device.

【0005】[0005]

【従来の技術】従来の電子ビーム装置の一構成例を図4
に示す。同図において、半導体集積回路試験装置は、電
子ビームを試験対象の半導体集積回路等の被験試料(図
示を省略)に照射して発生する二次電子を検出して得ら
れた二次電子信号65を増幅する二次電子信号増幅回路
21と、増幅された二次電子信号をサンプリングするサ
ンプリング回路23と、サンプリングした信号の加算平
均を行う加算平均回路25と、加算平均した値により試
験部分の波形等を生成して装置内の像表示系に出力する
と共に、プログラマブル遅延回路9に対して遅延時間を
指定する演算制御回路29と、試験対象の半導体集積回
路等の試料の動作パターンに同期したトリガ信号51を
演算制御回路29で指定された時間信号54だけ遅延さ
せた信号59’、60’、及び61’を生成して、それ
ぞれサンプリング回路23、加算平均回路25、及び偏
向器ドライバ15に供給するプログラマブル遅延回路9
と、トリガ信号61’により偏向器を駆動する偏向器ド
ライバ15とから構成されている。尚、演算制御回路2
9はマイクロプロセッサ等で具現されている。
2. Description of the Related Art One example of the configuration of a conventional electron beam apparatus is shown in FIG.
Shown in. In the figure, the semiconductor integrated circuit testing device detects a secondary electron generated by irradiating a test sample (not shown) such as a semiconductor integrated circuit to be tested with an electron beam to obtain a secondary electron signal 65. A secondary electron signal amplifying circuit 21, a sampling circuit 23 for sampling the amplified secondary electron signal, an averaging circuit 25 for averaging the sampled signals, and a waveform of the test portion based on the averaging value. Etc. and outputs them to the image display system in the apparatus, and a calculation control circuit 29 for designating a delay time for the programmable delay circuit 9 and a trigger synchronized with the operation pattern of the sample such as the semiconductor integrated circuit to be tested. The signal 51 is delayed by the time signal 54 designated by the arithmetic control circuit 29 to generate signals 59 ', 60', and 61 ', which are respectively generated by the sampling circuit 23 and the addition circuit. Programmable supplied to the averaging circuit 25, and a deflector driver 15 delay circuit 9
And a deflector driver 15 which drives the deflector by a trigger signal 61 '. The arithmetic control circuit 2
9 is embodied by a microprocessor or the like.

【0006】この従来の電子ビーム装置は、トリガ信号
51を測定して、サンプリング回路23のサンプリング
周波数の上限、二次電子信号増幅回路21の帯域幅、加
算平均回路25の動作周波数の上限、プログラマブル遅
延回路9の動作周波数の上限といった各種制限と比較し
て自動分周して測定する機能を有していなかった。従っ
て、測定しようとする半導体集積回路等の試料の動作周
波数が高い場合には、個別に固定の分周回路を設けてト
リガ信号を生成したり、また、LSIテスタを使用して
半導体集積回路等の試料を駆動する場合には、テストプ
ログラムによりテストパターンの動作周期の複数倍の周
期の信号を作りトリガ信号としていた。
In this conventional electron beam apparatus, the trigger signal 51 is measured, and the upper limit of the sampling frequency of the sampling circuit 23, the bandwidth of the secondary electron signal amplifier circuit 21, the upper limit of the operating frequency of the averaging circuit 25, and the programmable The delay circuit 9 does not have a function of automatically dividing and measuring in comparison with various restrictions such as the upper limit of the operating frequency. Therefore, when the operating frequency of a sample such as a semiconductor integrated circuit to be measured is high, a fixed frequency dividing circuit is individually provided to generate a trigger signal, or an LSI tester is used to generate a semiconductor integrated circuit or the like. In the case of driving the sample No. 2, a signal having a cycle that is a multiple of the operation cycle of the test pattern was made by the test program and used as the trigger signal.

【0007】[0007]

【発明が解決しようとする課題】このように従来の半導
体集積回路試験装置においては、被験試料の動作周波数
が高い場合や広範囲の位相について測定しようとする場
合には、プログラマブル遅延回路等の装置を構成する要
素の動作周波数の制限を越えるため、個別に固定の分周
回路を設けてトリガ信号を生成したり、また、LSIテ
スタのトリガ送出部のテストパターンを変更する必要が
あった。従って、被験試料毎に、或いは試験の種別に応
じて外付けの分周回路の変更や、テストパターンの変更
が発生し、使い勝手が悪いという問題があった。
As described above, in the conventional semiconductor integrated circuit test apparatus, when a test sample has a high operating frequency or when it is desired to measure a wide range of phases, a device such as a programmable delay circuit is used. In order to exceed the operating frequency limit of the constituent elements, it is necessary to individually provide a fixed frequency dividing circuit to generate a trigger signal, and to change the test pattern of the trigger sending unit of the LSI tester. Therefore, there is a problem that the external frequency divider circuit is changed or the test pattern is changed for each test sample or according to the type of test, resulting in poor usability.

【0008】本発明は、上記問題点を解決するもので、
トリガ周波数の測定、及び自動分周機能を備えることに
より、トリガ周波数の制約が無く、操作性の良い半導体
集積回路試験装置を提供することを目的とする。
The present invention solves the above problems,
It is an object of the present invention to provide a semiconductor integrated circuit test device which has no trigger frequency restriction and has good operability by providing a trigger frequency measurement and an automatic frequency dividing function.

【0009】[0009]

【課題を解決するための手段】図1は本発明の原理説明
図である。上記課題を解決するために、本発明の第1の
特徴の半導体集積回路試験装置は、電子ビームまたは光
ビームを用いて半導体集積回路等の試料1の内部の動作
状態を測定する半導体集積回路試験装置において、前記
測定対象の試料1の動作に同期したトリガ信号51の周
波数を測定する周波数測定手段3と、分周比を決定する
分周比決定手段5と、決定された分周比55に基づき前
記トリガ信号51を分周するプログラマブル分周手段7
と、分周後のトリガ信号57をプログラマブルに設定さ
れた値に基づき遅延させるプログラマブル遅延回路9
と、遅延後のトリガ信号59に同期して電子ビームの場
合には二次電子を、光ビームの場合には電気光学効果に
よる偏光を検出する検出手段11とを有して構成し、前
記分周比決定手段5は、当該装置の各構成要素が正常動
作する周波数以下で、且つ前記検出手段11が試料1か
らの信号を時間的に分類できる範囲内で最高速の周波数
となるよう分周比を決定する。
FIG. 1 illustrates the principle of the present invention. In order to solve the above-mentioned problems, the semiconductor integrated circuit test device of the first feature of the present invention is a semiconductor integrated circuit test for measuring an internal operating state of a sample 1 such as a semiconductor integrated circuit using an electron beam or a light beam. In the apparatus, the frequency measuring means 3 for measuring the frequency of the trigger signal 51 synchronized with the operation of the sample 1 to be measured, the frequency division ratio determining means 5 for determining the frequency division ratio, and the determined frequency division ratio 55 are used. Programmable frequency dividing means 7 for dividing the trigger signal 51 based on the above
And a programmable delay circuit 9 that delays the frequency-divided trigger signal 57 based on a programmable value.
And a detection means 11 for detecting secondary electrons in the case of an electron beam and in the case of a light beam in synchronization with the delayed trigger signal 59, and for detecting the polarization due to the electro-optical effect. The frequency-ratio determining means 5 divides the frequency of the signal from the sample 1 into the highest frequency within the range in which each component of the apparatus operates normally or below and the detection means 11 can classify the signal from the sample 1 in terms of time. Determine the ratio.

【0010】本発明の第2の特徴の半導体集積回路試験
装置は、請求項1に記載の半導体集積回路試験装置にお
いて、前記検出手段11は、二次電子信号を増幅する二
次電子信号増幅回路21と、前記遅延されたトリガ信号
59に同期してサンプリングを行なうサンプリング回路
23と、サンプリングされた値を加算平均する加算平均
回路25とを有して構成し、前記分周比決定手段5は、
前記二次電子信号増幅回路21の帯域幅、前記サンプリ
ング回路23のサンプリング周波数の上限値、前記加算
平均回路25の動作周波数の上限値、並びに前記プログ
ラマブル遅延手段9の動作周波数の上限値と比較して最
高速の周波数となるよう分周比を決定する。
A semiconductor integrated circuit test device according to a second aspect of the present invention is the semiconductor integrated circuit test device according to claim 1, wherein the detection means 11 is a secondary electron signal amplifier circuit for amplifying a secondary electron signal. 21, a sampling circuit 23 for sampling in synchronization with the delayed trigger signal 59, and an averaging circuit 25 for averaging the sampled values. ,
The bandwidth of the secondary electronic signal amplifier circuit 21, the upper limit value of the sampling frequency of the sampling circuit 23, the upper limit value of the operating frequency of the averaging circuit 25, and the upper limit value of the operating frequency of the programmable delay means 9 are compared. The frequency division ratio is determined so that the frequency becomes the fastest.

【0011】[0011]

【作用】本発明の第1の特徴の半導体集積回路試験装置
では、図1に示す如く、分周比決定手段5は、半導体集
積回路試験装置を構成する各要素が正常動作する周波数
以下で、且つ検出手段11の分解能を保存する範囲内で
最高速の周波数となるよう分周比を決定するようにして
いる。
In the semiconductor integrated circuit test device of the first feature of the present invention, as shown in FIG. 1, the frequency division ratio determining means 5 has a frequency equal to or lower than the frequency at which each element constituting the semiconductor integrated circuit test device operates normally. In addition, the frequency division ratio is determined so that the frequency becomes the highest within the range in which the resolution of the detection means 11 is preserved.

【0012】従って、半導体集積回路試験装置の各構成
要素の動作周波数や分解能の制限を満足し、しかもその
制約の中で最高速の周波数となるように自動分周するこ
とができ、操作性の良い半導体集積回路試験装置を実現
できる。
Therefore, the operating frequency and the resolution of each constituent element of the semiconductor integrated circuit tester can be satisfied, and the frequency can be automatically divided to the highest frequency within the restrictions. A good semiconductor integrated circuit test device can be realized.

【0013】また本発明の第2の特徴の半導体集積回路
試験装置では、図2に示す如く、分周比決定手段5(演
算制御回路27)は、二次電子信号増幅回路21の帯域
幅、サンプリング回路23のサンプリング周波数の上限
値、加算平均回路25の動作周波数の上限値、並びにプ
ログラマブル遅延手段9の動作周波数の上限値と比較し
て、これら制約を満たす範囲内で最高速の周波数となる
よう分周比を決定するようにしている。
Further, in the semiconductor integrated circuit testing device of the second feature of the present invention, as shown in FIG. 2, the frequency division ratio determining means 5 (arithmetic control circuit 27) has the bandwidth of the secondary electronic signal amplifying circuit 21. Compared with the upper limit value of the sampling frequency of the sampling circuit 23, the upper limit value of the operating frequency of the averaging circuit 25, and the upper limit value of the operating frequency of the programmable delay means 9, the frequency becomes the fastest within the range satisfying these constraints. The frequency division ratio is decided accordingly.

【0014】従って、半導体集積回路試験装置の各構成
要素の動作周波数や帯域幅の制限を満足し、しかもその
制約の中で最高速の周波数となるように自動分周するこ
とができ、操作性の良い半導体集積回路試験装置を実現
できる。
Therefore, the operating frequency and the bandwidth of each component of the semiconductor integrated circuit tester can be satisfied, and the frequency can be automatically divided to the highest frequency within the constraints, and the operability is improved. A good semiconductor integrated circuit tester can be realized.

【0015】[0015]

【実施例】次に、本発明に係る実施例を図面に基づいて
説明する。図2に本発明の一実施例に係る半導体集積回
路試験装置の構成図を示す。同図において、図4(従来
例)と重複する部分には同一の符号を附して説明を簡略
にする。
Embodiments of the present invention will now be described with reference to the drawings. FIG. 2 shows a block diagram of a semiconductor integrated circuit test apparatus according to an embodiment of the present invention. In the figure, the same parts as those in FIG. 4 (conventional example) are designated by the same reference numerals to simplify the description.

【0016】図2において、本実施例の半導体集積回路
試験装置は、二次電子信号増幅回路21、サンプリング
回路23、加算平均回路25、演算制御回路27、周波
数測定回路3、プログラマブル分周回路7、プログラマ
ブル遅延回路9、及び偏向器ドライバ15から構成され
ている。尚、同図は本発明に直接関係する構成要素のみ
を示し、電子ビームを照射する電子ビーム鏡筒系やエネ
ルギー分析器系、像表示系、及び波形表示系については
省略している。また、分周比決定手段5の機能はマイク
ロプロセッサ等で具現される演算制御回路27で実現し
ている。
Referring to FIG. 2, the semiconductor integrated circuit testing apparatus of this embodiment has a secondary electronic signal amplifier circuit 21, a sampling circuit 23, an averaging circuit 25, an arithmetic control circuit 27, a frequency measuring circuit 3, a programmable frequency dividing circuit 7. , A programmable delay circuit 9 and a deflector driver 15. It should be noted that this figure shows only the components directly related to the present invention, and an electron beam lens barrel system for irradiating an electron beam, an energy analyzer system, an image display system, and a waveform display system are omitted. The function of the frequency division ratio determining means 5 is realized by the arithmetic control circuit 27 implemented by a microprocessor or the like.

【0017】周波数測定回路3は、試験対象の半導体集
積回路1の動作パターンに同期したトリガ信号の周波数
を測定し、結果を演算制御回路27に伝送する。演算制
御回路27は、予め、サンプリング回路23のサンプリ
ング周波数の上限値、二次電子信号増幅回路21の帯域
幅の値、加算平均回路25の加算平均周波数の上限値、
プログラマブル遅延回路9の動作周波数の制限値をそれ
ぞれ内部記憶に保持しておき、周波数測定回路3で得ら
れたトリガ周波数とこれら内部記憶に保持された値との
比較演算を行ない、これら各構成要素の動作周波数や帯
域幅の制限を満足し、しかもその制約の中で最高速の周
波数となるようにプログラマブル分周回路7の分周比を
設定する。プログラマブル分周回路7は、演算制御回路
27で設定された分周比55に従って入力されたトリガ
信号51を分周する。プログラマブル遅延回路9は、分
周されたトリガ信号57を演算制御回路27で指定され
た時間信号54だけ遅延させた信号59、60、及び6
1を生成して、それぞれサンプリング回路23、加算平
均回路25、及び偏向器ドライバ15に供給する。偏向
器ドライバ15は、遅延されたトリガ信号61に同期し
て半導体集積回路1に電子ビームを照射するよう偏向器
を駆動する。またこれにより検出される二次電子信号の
サンプリング、加算平均は、それぞれトリガ信号59、
60に同期して行なわれる。
The frequency measuring circuit 3 measures the frequency of the trigger signal synchronized with the operation pattern of the semiconductor integrated circuit 1 to be tested, and transmits the result to the arithmetic control circuit 27. The arithmetic control circuit 27 previously sets the upper limit value of the sampling frequency of the sampling circuit 23, the bandwidth value of the secondary electronic signal amplifier circuit 21, the upper limit value of the averaging average frequency of the averaging circuit 25,
The limit values of the operating frequency of the programmable delay circuit 9 are respectively held in internal memory, and the trigger frequency obtained by the frequency measuring circuit 3 and the values held in these internal memories are compared, and each of these constituent elements is calculated. The frequency division ratio of the programmable frequency dividing circuit 7 is set so that the operating frequency and the bandwidth are restricted and the frequency becomes the highest speed within the restriction. The programmable frequency dividing circuit 7 divides the frequency of the trigger signal 51 input according to the frequency dividing ratio 55 set by the arithmetic control circuit 27. The programmable delay circuit 9 delays the frequency-divided trigger signal 57 by the time signal 54 designated by the arithmetic control circuit 27, and outputs signals 59, 60, and 6.
1 is generated and supplied to the sampling circuit 23, the averaging circuit 25, and the deflector driver 15, respectively. The deflector driver 15 drives the deflector so as to irradiate the semiconductor integrated circuit 1 with the electron beam in synchronization with the delayed trigger signal 61. Further, the sampling and arithmetic mean of the secondary electron signals detected by this are the trigger signal 59,
It is performed in synchronization with 60.

【0018】次に、本実施例の動作を、図3の各部の信
号波形を参照して説明する。図3(1)は測定しようと
している試験対象の半導体集積回路等の被験試料1の信
号波形を示している。先ず、被験試料1の動作パターン
に同期したトリガ信号51が同図(2)に示す波形であ
ったとする。周波数測定回路3はこのトリガ信号51の
周波数を測定して演算制御回路27に伝送し、演算制御
回路27は、各構成要素の動作周波数や帯域幅の制約条
件を満たし、しかも最高速の周波数で動作するように分
周比を設定し、信号55でプログラマブル分周回路7に
供給する。図示例の場合、分周比は1/2に設定されて
おり、プログラマブル分周回路7は図3(3)に示すよ
うな波形のトリガ信号57を出力する。プログラマブル
遅延回路では、演算制御回路27で指定された時間54
だけ遅延させた信号59、60、及び61を生成する。
偏向器ドライバ15に供給するトリガ信号61は、図3
(4)に示すような、被験試料1に照射する電子ビーム
パルスの位相を制御するため位相をφi だけ遅延させた
信号であり、サンプリング回路23に供給するトリガ信
号59は、同図(6)に示すような、位相φi に加えて
更にΔ1(電子ビーム照射から二次電子信号65(同図
(5)参照)がピーク値を持つまでの時間であり、装置
に固有の値)だけ遅延させた信号である。このように、
位相φi に対応する二次電子信号65をサンプリングし
て、A/D変換されたデジタルデータDi (信号67の
波形;図3(7)参照)を得て、加算平均回路25によ
り所定回数の加算平均を行い位相φi に対応する1位相
点の加算平均データを得る。この操作をエネルギー分析
器(図には示していない)の分析電圧および位相φi
変えて、測定する信号波形図3(1)の必要とする位相
範囲にわたって行うことにより、波形を測定することが
できる。
Next, the operation of this embodiment will be described with reference to the signal waveforms of the respective parts in FIG. FIG. 3 (1) shows a signal waveform of a test sample 1 such as a semiconductor integrated circuit to be tested which is to be measured. First, it is assumed that the trigger signal 51 synchronized with the operation pattern of the test sample 1 has the waveform shown in FIG. The frequency measuring circuit 3 measures the frequency of the trigger signal 51 and transmits it to the arithmetic control circuit 27. The arithmetic control circuit 27 satisfies the operating frequency and the constraint conditions of the bandwidth of each component and at the highest frequency. The frequency division ratio is set so as to operate, and the signal 55 is supplied to the programmable frequency dividing circuit 7. In the illustrated example, the frequency division ratio is set to 1/2, and the programmable frequency division circuit 7 outputs the trigger signal 57 having a waveform as shown in FIG. In the programmable delay circuit, the time 54 designated by the arithmetic control circuit 27
To produce signals 59, 60, and 61 delayed by only.
The trigger signal 61 supplied to the deflector driver 15 is as shown in FIG.
As shown in (4), the trigger signal 59 supplied to the sampling circuit 23 is a signal delayed by φ i in order to control the phase of the electron beam pulse with which the test sample 1 is irradiated. ), In addition to the phase φ i , Δ1 (time from the electron beam irradiation until the secondary electron signal 65 (see (5) in the figure) has a peak value, which is a value unique to the apparatus) It is a delayed signal. in this way,
The secondary electron signal 65 corresponding to the phase φ i is sampled to obtain A / D-converted digital data D i (waveform of the signal 67; see FIG. 3 (7)), and the averaging circuit 25 performs a predetermined number of times. Is averaged to obtain arithmetic mean data of one phase point corresponding to the phase φ i . The waveform is measured by changing the analysis voltage and the phase φ i of the energy analyzer (not shown) and performing the operation over the required phase range of the signal waveform in FIG. 3 (1). You can

【0019】[0019]

【発明の効果】以上説明したように、本発明によれば、
半導体集積回路試験装置の各構成要素の動作周波数や分
解能の制限、例えば二次電子信号増幅回路の帯域幅、サ
ンプリング回路のサンプリング周波数の上限値、加算平
均回路の加算平均周波数の上限値、並びにプログラマブ
ル遅延手段の動作周波数の上限値を満足し、しかもその
制約の中で最高速の周波数となるように分周比を決定す
ることとしたので、最適な自動分周を行なうことがで
き、トリガ周波数の変化に柔軟に対応でき、操作性の良
い半導体集積回路試験装置を提供することができる。
As described above, according to the present invention,
Limitation of operating frequency and resolution of each component of the semiconductor integrated circuit test device, for example, bandwidth of secondary electron signal amplification circuit, upper limit value of sampling frequency of sampling circuit, upper limit value of addition average frequency of addition averaging circuit, and programmable Since the frequency division ratio is determined so that the operating frequency of the delay means satisfies the upper limit value and the frequency becomes the fastest within the constraints, optimum automatic frequency division can be performed and the trigger frequency It is possible to provide a semiconductor integrated circuit testing device which can flexibly respond to changes in the above and has good operability.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の発明原理図である。FIG. 1 is a principle diagram of the present invention.

【図2】本発明の一実施例に係る半導体集積回路試験装
置の構成図である。
FIG. 2 is a configuration diagram of a semiconductor integrated circuit test apparatus according to an embodiment of the present invention.

【図3】本発明の半導体集積回路試験装置の各部の信号
波形図である。
FIG. 3 is a signal waveform diagram of each part of the semiconductor integrated circuit test apparatus of the present invention.

【図4】従来の電子ビーム装置の構成図である。FIG. 4 is a configuration diagram of a conventional electron beam apparatus.

【符号の説明】[Explanation of symbols]

1…被験試料(半導体集積回路等) 3…周波数測定手段 5…分周比決定手段 7…プログラマブル分周手段 9…プログラマブル遅延回路 11…検出手段 13…ビーム発生手段 15…偏向器ドライバ 21…二次電子信号増幅回路 23…サンプリング回路 25…加算平均回路 27、29…演算制御回路 51…トリガ信号 53…測定周波数 54…遅延時間 55…分周比 57…分周後のトリガ信号 59、59’…遅延後のトリガ信号(サンプリング用) 60、60’…遅延後のトリガ信号(加算平均用) 61、61’…遅延後のトリガ信号(偏向器駆動用) 65…二次電子信号 DESCRIPTION OF SYMBOLS 1 ... Test sample (semiconductor integrated circuit etc.) 3 ... Frequency measuring means 5 ... Dividing ratio determining means 7 ... Programmable dividing means 9 ... Programmable delay circuit 11 ... Detecting means 13 ... Beam generating means 15 ... Deflector driver 21 ... 2 Next electronic signal amplification circuit 23 ... Sampling circuit 25 ... Addition and averaging circuit 27, 29 ... Arithmetic control circuit 51 ... Trigger signal 53 ... Measurement frequency 54 ... Delay time 55 ... Dividing ratio 57 ... Trigger signal after dividing 59, 59 ' ... Delayed trigger signal (for sampling) 60, 60 '... Delayed trigger signal (for addition and averaging) 61, 61' ... Delayed trigger signal (for deflector drive) 65 ... Secondary electron signal

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 電子ビームまたは光ビームを用いて半導
体集積回路等の試料(1)の内部の動作状態を測定する
半導体集積回路試験装置であって、 前記測定対象の試料(1)の動作に同期したトリガ信号
(51)の周波数を測定する周波数測定手段(3)と、
分周比を決定する分周比決定手段(5)と、決定された
分周比(55)に基づき前記トリガ信号(51)を分周
するプログラマブル分周手段(7)と、分周後のトリガ
信号(57)をプログラマブルに設定された値に基づき
遅延させるプログラマブル遅延回路(9)と、遅延後の
トリガ信号(59)に同期して電子ビームの場合には二
次電子を、光ビームの場合には電気光学効果による偏光
を検出する検出手段(11)とを有し、 前記分周比決定手段(5)は、当該装置の各構成要素が
正常動作する周波数以下で、且つ前記検出手段(11)
が試料(1)からの信号を時間的に分離できる範囲内で
最高速の周波数となるよう分周比を決定することを特徴
とする半導体集積回路試験装置。
1. A semiconductor integrated circuit test apparatus for measuring an internal operating state of a sample (1) such as a semiconductor integrated circuit by using an electron beam or a light beam, which is used for the operation of the sample (1) to be measured. Frequency measuring means (3) for measuring the frequency of the synchronized trigger signal (51),
Frequency division ratio determination means (5) for determining the frequency division ratio, programmable frequency division means (7) for frequency dividing the trigger signal (51) based on the determined frequency division ratio (55), and after the frequency division. A programmable delay circuit (9) that delays the trigger signal (57) based on a programmable value, and a secondary electron in the case of an electron beam, in the case of an electron beam, in synchronization with the delayed trigger signal (59). In some cases, it has a detection means (11) for detecting polarized light due to an electro-optical effect, and the frequency division ratio determination means (5) has a frequency equal to or lower than a frequency at which each component of the apparatus normally operates, and the detection means. (11)
Is a semiconductor integrated circuit test apparatus, wherein the frequency division ratio is determined so that the signal from the sample (1) has the highest frequency within a range in which it can be separated in time.
【請求項2】 前記検出手段(11)は、二次電子信号
を増幅する二次電子信号増幅回路(21)と、前記遅延
されたトリガ信号(59)に同期してサンプリングを行
なうサンプリング回路(23)と、サンプリングされた
値を加算平均する加算平均回路(25)とを備え、 前記分周比決定手段(5)は、前記二次電子信号増幅回
路(21)の帯域幅、前記サンプリング回路(23)の
サンプリング周波数の上限値、前記加算平均回路(2
5)の動作周波数の上限値、並びに前記プログラマブル
遅延手段(9)の動作周波数の上限値と比較して最高速
の周波数となるよう分周比を決定することを特徴とする
請求項1に記載の半導体集積回路試験装置。
2. The detection means (11) comprises a secondary electron signal amplifier circuit (21) for amplifying a secondary electron signal, and a sampling circuit (Sampling circuit for sampling in synchronization with the delayed trigger signal (59). 23) and an averaging circuit (25) for averaging the sampled values, wherein the frequency division ratio determining means (5) has the bandwidth of the secondary electronic signal amplifying circuit (21) and the sampling circuit. (23) Upper limit of sampling frequency, the averaging circuit (2
5. The frequency division ratio is determined so that the frequency becomes the highest speed by comparing with the upper limit value of the operating frequency of 5) and the upper limit value of the operating frequency of the programmable delay means (9). Semiconductor integrated circuit test equipment.
JP3240037A 1991-09-19 1991-09-19 Semiconductor integrated circuit testing device Withdrawn JPH0582606A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3240037A JPH0582606A (en) 1991-09-19 1991-09-19 Semiconductor integrated circuit testing device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3240037A JPH0582606A (en) 1991-09-19 1991-09-19 Semiconductor integrated circuit testing device

Publications (1)

Publication Number Publication Date
JPH0582606A true JPH0582606A (en) 1993-04-02

Family

ID=17053533

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3240037A Withdrawn JPH0582606A (en) 1991-09-19 1991-09-19 Semiconductor integrated circuit testing device

Country Status (1)

Country Link
JP (1) JPH0582606A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0908732A2 (en) * 1997-10-06 1999-04-14 Ando Electric Co., Ltd. Electro-optic sampling oscilloscope
EP0908733A2 (en) * 1997-10-06 1999-04-14 Ando Electric Co., Ltd. Electro-optic sampling oscilloscope
EP0918224A2 (en) * 1997-11-10 1999-05-26 Ando Electric Co., Ltd. Signal processing circuit for electro-optic probe
EP0921402A2 (en) * 1997-11-19 1999-06-09 Ando Electric Co., Ltd. Electro-optic sampling oscilloscope
EP0962782A1 (en) * 1998-06-03 1999-12-08 Ando Electric Co., Ltd. Electro-optic sampling oscilloscope

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0908732A3 (en) * 1997-10-06 1999-11-17 Ando Electric Co., Ltd. Electro-optic sampling oscilloscope
EP0908733A2 (en) * 1997-10-06 1999-04-14 Ando Electric Co., Ltd. Electro-optic sampling oscilloscope
US6377036B1 (en) 1997-10-06 2002-04-23 Ando Electric Co., Ltd. Electro-optic sampling oscilloscope
EP0908732A2 (en) * 1997-10-06 1999-04-14 Ando Electric Co., Ltd. Electro-optic sampling oscilloscope
EP0908733A3 (en) * 1997-10-06 1999-11-17 Ando Electric Co., Ltd. Electro-optic sampling oscilloscope
JPH11142485A (en) * 1997-11-10 1999-05-28 Ando Electric Co Ltd Signal processing circuit of electro-optical probe
EP0918224A3 (en) * 1997-11-10 1999-12-15 Ando Electric Co., Ltd. Signal processing circuit for electro-optic probe
US6087838A (en) * 1997-11-10 2000-07-11 Ando Electric Co., Ltd. Signal processing circuit for electro-optic probe
EP0918224A2 (en) * 1997-11-10 1999-05-26 Ando Electric Co., Ltd. Signal processing circuit for electro-optic probe
EP0921402A2 (en) * 1997-11-19 1999-06-09 Ando Electric Co., Ltd. Electro-optic sampling oscilloscope
EP0921402A3 (en) * 1997-11-19 1999-12-15 Ando Electric Co., Ltd. Electro-optic sampling oscilloscope
EP0962782A1 (en) * 1998-06-03 1999-12-08 Ando Electric Co., Ltd. Electro-optic sampling oscilloscope
US6288529B1 (en) 1998-06-03 2001-09-11 Ando Electric Co., Ltd Timing generation circuit for an electro-optic oscilloscope

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