JPH0580990B2 - - Google Patents

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Publication number
JPH0580990B2
JPH0580990B2 JP60297371A JP29737185A JPH0580990B2 JP H0580990 B2 JPH0580990 B2 JP H0580990B2 JP 60297371 A JP60297371 A JP 60297371A JP 29737185 A JP29737185 A JP 29737185A JP H0580990 B2 JPH0580990 B2 JP H0580990B2
Authority
JP
Japan
Prior art keywords
voltage
resistance value
resistor
circuit
detection circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60297371A
Other languages
Japanese (ja)
Other versions
JPS62156570A (en
Inventor
Toyohiko Egami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Noritz Corp
Original Assignee
Noritz Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Noritz Corp filed Critical Noritz Corp
Priority to JP60297371A priority Critical patent/JPS62156570A/en
Publication of JPS62156570A publication Critical patent/JPS62156570A/en
Publication of JPH0580990B2 publication Critical patent/JPH0580990B2/ja
Granted legal-status Critical Current

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  • Testing Of Short-Circuits, Discontinuities, Leakage, Or Incorrect Line Connections (AREA)
  • Measurement Of Resistance Or Impedance (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)

Description

【発明の詳細な説明】 (産業上の利用分野) 本発明は、変動範囲が広い抵抗値を安定よく検
出できるように改善された抵抗値検出回路に関す
るものである。
DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a resistance value detection circuit that is improved so as to be able to stably detect resistance values that vary over a wide range.

(従来の技術) 例えば、SnO2を主成分とするガスセンサ等は
温度依存性の高いものが多いが、湯沸器等におい
て排ガス中の特定ガスの濃度を検出するような場
合等、温度条件を一定にできない場合が多い。こ
のような場合には、センサの抵抗値が温度とガス
濃度(検出量)とによつて例えば第3図に示すよ
うな負特性を呈する数メガΩから数十Ωというよ
うな非常に大きな範囲にわたり変化する。一方、
このような負特性のセンサを用いて一定レベル以
上のガス濃度を判定させる場合において、センサ
を含む回路の断線が生じた場合、濃度の判定が不
可能になり、この濃度の判定により湯沸器の燃焼
を制御するような場合には危険状態が生じるおそ
れがある。したがつて、従来では、このような危
険状態を避けるために、第2図に示すように、検
出レベルの基準となる設定電圧Vsetとこれより
も高電圧のオープン検出基準電圧Vopenとを設定
する分圧回路1をセンサ電圧検出回路2と並列に
電源3に接続し、前記設定電圧Vsetとセンサ電
圧Vsenseとを比較し、後者が前者を上回るとき
にセンサ電圧に対応して増減する設定検出出力を
出力するオペアンプ等の設定検出回路4を設ける
とともに、前記オープン検出基準電圧Vopenとセ
ンサ電圧Vsenseとを比較し、後者が前者を上回
るときにオープン検出信号を出力する比較器、オ
ペアンプ等からなるオープン発生検出回路5を設
けて、センサ回路2のオープン発生を検出できる
ようにした回路が実用されている。
(Prior technology) For example, many gas sensors whose main component is SnO2 are highly temperature dependent, but when detecting the concentration of a specific gas in the exhaust gas of a water heater, etc., the temperature condition is kept constant. In many cases, this is not possible. In such cases, the resistance value of the sensor may vary over a very large range from several megaohms to several tens of ohms, exhibiting negative characteristics as shown in Figure 3, depending on the temperature and gas concentration (detected amount). change over time. on the other hand,
When using a sensor with such negative characteristics to determine the gas concentration above a certain level, if the circuit containing the sensor is disconnected, it becomes impossible to determine the concentration, and the water heater Dangerous conditions may arise when controlling the combustion of Therefore, conventionally, in order to avoid such a dangerous situation, as shown in FIG. 2, a set voltage Vset, which serves as a reference for the detection level, and an open detection reference voltage Vopen, which is a higher voltage, are set. The voltage dividing circuit 1 is connected to the power supply 3 in parallel with the sensor voltage detection circuit 2, and the set voltage Vset and the sensor voltage Vsense are compared, and when the latter exceeds the former, the set detection output increases or decreases in response to the sensor voltage. A setting detection circuit 4 such as an operational amplifier is provided, and a comparator, an operational amplifier, etc. that compares the open detection reference voltage Vopen and the sensor voltage Vsense and outputs an open detection signal when the latter exceeds the former. A circuit in which an occurrence detection circuit 5 is provided to detect the occurrence of an open circuit in the sensor circuit 2 is in practical use.

(発明が解決しようとする問題点) しかしながら、このように単に比較器やオペア
ンプを用いたオープン発生検出回路5を用いる場
合には、オープン発生時と非発生時(濃度検出
時)とで扱われる電圧が大幅に異なるので、回路
中に非常に大きな電圧設定を要する箇所と非常に
小さい電圧設定を要する箇所が生じ、回路設計
上、非常に困難な問題が生じる。
(Problem to be Solved by the Invention) However, when using the open circuit detection circuit 5 that simply uses a comparator or an operational amplifier, it is handled when an open circuit occurs and when it does not occur (during concentration detection). Since the voltages are significantly different, there are parts in the circuit that require a very large voltage setting and parts that require a very small voltage setting, creating a very difficult problem in circuit design.

本発明は上述の事情を考慮して、少数の部品を
付加するだけで、非常に広範囲に変化する抵抗値
の検出を低抵抗値域でも、高抵抗値域でも安定よ
く検出できる安価な抵抗値検出回路を提供するこ
とを目的とするものである。
Taking the above-mentioned circumstances into consideration, the present invention provides an inexpensive resistance value detection circuit that can stably detect resistance values that change over a very wide range, both in low resistance value ranges and high resistance value ranges, by simply adding a small number of components. The purpose is to provide the following.

(実施例) 以下、本発明を図例に基づき具体的に説明す
る。
(Example) Hereinafter, the present invention will be specifically described based on illustrated examples.

第1図は本発明の一実施例に係るガス濃度検出
回路の回路図であり、図中、第2図の従来例の各
部品と同様の機能を有する部品には同様の符号と
名称が付されている。
FIG. 1 is a circuit diagram of a gas concentration detection circuit according to an embodiment of the present invention. In the figure, parts having the same functions as those of the conventional example shown in FIG. 2 are given the same symbols and names. has been done.

特記すべきことは、前記分圧回路1が設定電圧
Vsetを設定する分圧抵抗1aと、オープン検出
基準電圧Vopenを設定する分圧抵抗1dと、これ
らの間に接続され、設定電圧Vsetとオープン検
出基準電圧Vsenseの中間電圧Vfbが得られる中
間分圧抵抗1b及び1cで構成され、その中間電
圧Vfbとセンサ電圧Vsenseとを比較して後者が
前者を上回るときに出力するオペアンプ6と、こ
のオペアンプ6の出力をこれのセンサ側入力端
(正相入力端)に負帰環させる帰環回路7と、前
記オペアンプ6の発振防止用コンデンサ8が付加
されていることである。前記帰環回路7は、オペ
アンプ6の出力端に接続された電流制限抵抗7a
と、これを介してベース接続されたトランジスタ
7bと、このトランジスタ7bのコレクタとオペ
アンプ6の正相入力端との間に接続され、帰環電
流を制限する帰環抵抗7cを有する。前記トラン
ジスタ7bのエミツタは所定の電圧Vccの電源ラ
インに接続されている。
What should be noted is that the voltage divider circuit 1
A voltage dividing resistor 1a that sets Vset, a voltage dividing resistor 1d that sets the open detection reference voltage Vopen, and an intermediate voltage divider connected between these to obtain an intermediate voltage Vfb between the set voltage Vset and the open detection reference voltage Vsense. An operational amplifier 6 is composed of resistors 1b and 1c, and outputs an output when the intermediate voltage Vfb and sensor voltage Vsense are compared and the latter exceeds the former, and the output of this operational amplifier 6 is connected to its sensor side input terminal (positive phase input A feedback circuit 7 for negative feedback at the end) and a capacitor 8 for preventing oscillation of the operational amplifier 6 are added. The return circuit 7 includes a current limiting resistor 7a connected to the output terminal of the operational amplifier 6.
, a transistor 7b whose base is connected through the transistor 7b, and a return resistor 7c connected between the collector of the transistor 7b and the positive-phase input terminal of the operational amplifier 6 to limit the return current. The emitter of the transistor 7b is connected to a power supply line with a predetermined voltage Vcc.

なお、センサ回路2のプルアツプ抵抗2aの抵
抗値は数MΩ、センサ2bの抵抗値はオープン検
出時では数MΩ、正常時には数百KΩないし数
MΩ、濃度検出時には数十ないし数百Ω、帰環抵
抗7cの抵抗値は数百ないし数KΩとする。そし
て、センサ2bが正常で数MΩの抵抗値を有する
ときには、Vopen>Vsense>Vfb>Vsetの関係
が成立するように各抵抗1a〜1d,2aの抵抗
値が設定される。
The resistance value of the pull-up resistor 2a of the sensor circuit 2 is several MΩ, the resistance value of the sensor 2b is several MΩ when open is detected, and several hundred KΩ or several when normal.
MΩ, tens to hundreds of Ω during concentration detection, and resistance value of the return resistor 7c to several hundreds to several KΩ. When the sensor 2b is normal and has a resistance value of several MΩ, the resistance values of the resistors 1a to 1d and 2a are set so that the relationship Vopen>Vsense>Vfb>Vset is established.

次に、このように構成されたガス濃度検出回路
の動作を説明する。
Next, the operation of the gas concentration detection circuit configured as described above will be explained.

センサ2bが断線した場合には、前記センサ電
圧Vsenseがほぼ電源電圧Vccに等しくなつて、
Vsense>Vopen>Vfb>Vsetの関係が成立する。
従つて、オープン発生検出回路を構成するオペア
ン5からオープン検出信号が出力され、設定検出
回路を構成するオペアンプ4からの設定検出信号
は出力されない。
When the sensor 2b is disconnected, the sensor voltage Vsense becomes approximately equal to the power supply voltage Vcc, and
The relationship Vsense>Vopen>Vfb>Vset holds true.
Therefore, the open detection signal is output from the operational amplifier 5 that constitutes the open occurrence detection circuit, and the setting detection signal is not output from the operational amplifier 4 that constitutes the setting detection circuit.

センサ2bが正常な場合、その抵抗値が数MΩ
のときには、Vopen>Vsense>Vfb>Vsetの関
係が成立し、オペアンプ5からオープン検出信号
は出力されない。このときには、オペアンプ6の
出力によりトランジスタ7bはオフである。前記
センサ2bの抵抗値がVopen>Vfb≧Vsense>
Vsetになるレベルまで低下すると、トランジス
タ7bはオフであるが、そのベース・コレクタ間
が導通して、オペアンプ6に負帰還がかかり始め
る。この状態はトランジスタ7bがオン(飽和状
態)になるまで保たれる。更に、センサ抵抗が低
下して数KΩに達すると、トランジスタ7bが飽
和しても帰還抵抗7cにより帰還量が制限され
て、Vopen>Vfb>Vsense>Vsetの関係が成立
する。センサ抵抗がこの状態よりも更に低下して
検出レベルになり、Vopen>Vfb>Vset>
Vsenseの関係が成立する範囲になると、オペア
ンプ4から設定検出信号が出力されることにな
り、センサ2bが所定の濃度を検出したことを示
すのである。
When sensor 2b is normal, its resistance value is several MΩ.
At this time, the relationship of Vopen>Vsense>Vfb>Vset is established, and the operational amplifier 5 does not output an open detection signal. At this time, the output of the operational amplifier 6 turns off the transistor 7b. The resistance value of the sensor 2b is Vopen>Vfb≧Vsense>
When the voltage drops to the level of Vset, the transistor 7b is off, but its base and collector become conductive, and negative feedback begins to be applied to the operational amplifier 6. This state is maintained until transistor 7b is turned on (saturated). Further, when the sensor resistance decreases and reaches several kilohms, even if the transistor 7b is saturated, the amount of feedback is limited by the feedback resistor 7c, and the relationship Vopen>Vfb>Vsense>Vset is established. The sensor resistance further decreases from this state to the detection level, and Vopen>Vfb>Vset>
When the Vsense relationship is established, the operational amplifier 4 outputs a setting detection signal, indicating that the sensor 2b has detected a predetermined concentration.

(発明の効果) 本発明は、以上のように、オープン検出基準電
圧と設定レベルの基準となる設定電圧の中間電圧
を基準電圧として、被検出抵抗の両端の電圧がこ
れ以上の場合に抵抗体側入力端に負帰還がかけら
れるオペアンプを設けることにより、被検出抵抗
の抵抗値がオープン検出域にあるときには被検出
抵抗に接続されるプルアツプ抵抗と被検出抵抗の
分圧比で、また、被検出抵抗の抵抗値が低く、そ
の両端間電圧が前記設定電圧以下になるときに
は、前記オペアンプの帰還抵抗と被検出抵抗の分
圧比で検出すべき電位が決まるので、通常の低抵
抗値における使用状態で検出量−被検出抵抗特性
の傾きが非常に大きな被検出抵抗でも微小レベル
の電圧を扱わずに高低それぞれのレベルの抵抗値
検出を安定よく行なうことができる。また、微小
電圧を扱う調整手段が不要になるうえ、付加され
る部品の点数が少なく、安価に実施できる。
(Effects of the Invention) As described above, the present invention uses the intermediate voltage between the open detection reference voltage and the set voltage that is the reference for the set level as the reference voltage, and when the voltage across the resistor to be detected is higher than this voltage, the resistor side By providing an operational amplifier to which negative feedback is applied to the input terminal, when the resistance value of the detected resistor is in the open detection range, the voltage division ratio of the pull-up resistor connected to the detected resistor and the detected resistor is When the resistance value of is low and the voltage across it is below the set voltage, the potential to be detected is determined by the voltage division ratio between the feedback resistance of the operational amplifier and the resistance to be detected, so detection can be performed under normal usage conditions with low resistance values. Even for a resistor to be detected with a very large slope of the quantity-resistance to be detected characteristic, high and low resistance values can be detected stably without handling minute voltage levels. Further, an adjustment means for handling minute voltages is not required, and the number of added parts is small, so it can be implemented at low cost.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の一実施例を示すガス濃度検出
回路の回路図、第2図は従来の抵抗値検出回路の
一例を示すガス濃度検出回路の回路図、第3図は
本発明に係る抵抗体の抵抗値特性の一例を示す検
出量−被検出抵抗特性図である。 1……分圧回路、2……センサ電圧検出回路、
2a……プルアツプ抵抗、2b……センサ、4…
…設定検出回路、5……オープン発生検出回路、
6……オペアンプ、7……帰環回路。
FIG. 1 is a circuit diagram of a gas concentration detection circuit showing an embodiment of the present invention, FIG. 2 is a circuit diagram of a gas concentration detection circuit showing an example of a conventional resistance value detection circuit, and FIG. 3 is a circuit diagram of a gas concentration detection circuit according to the present invention. FIG. 3 is a detected amount-detected resistance characteristic diagram showing an example of resistance value characteristics of a resistor. 1...Voltage dividing circuit, 2...Sensor voltage detection circuit,
2a...Pull-up resistor, 2b...Sensor, 4...
...Setting detection circuit, 5...Open occurrence detection circuit,
6... operational amplifier, 7... return circuit.

Claims (1)

【特許請求の範囲】[Claims] 1 外部からの刺激により著しい抵抗値変化を示
す抵抗体と、該抵抗体の抵抗値が設定レベルにあ
るとき設定検出信号を出力する設定検出回路と、
前記抵抗体の断線を検出してオープン検出信号を
出力するオープン発生検出回路とからなる抵抗値
検出回路において、前記抵抗値の設定レベルの基
準となる設定電圧と前記断線検出の基準となるオ
ープン検出基準電圧との中間の電圧を基準電圧と
して前記抵抗体の抵抗値検出電圧と比較するオペ
アンプを設け、該オペアンプの出力端から抵抗値
検出電圧側への帰還回路に非線形素子を設けたこ
とを特徴とする抵抗値検出電回路。
1. A resistor whose resistance value changes significantly due to external stimulation, and a setting detection circuit that outputs a setting detection signal when the resistance value of the resistor is at a set level;
The resistance value detection circuit includes an open detection circuit that detects a break in the resistor and outputs an open detection signal, and a set voltage that serves as a reference for the setting level of the resistance value, and an open detection circuit that serves as a reference for the disconnection detection. An operational amplifier is provided to compare the resistance value detection voltage of the resistor with a voltage intermediate between the reference voltage and the reference voltage as the reference voltage, and a nonlinear element is provided in a feedback circuit from the output terminal of the operational amplifier to the resistance value detection voltage side. resistance value detection circuit.
JP60297371A 1985-12-27 1985-12-27 Resistance value detecting circuit Granted JPS62156570A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60297371A JPS62156570A (en) 1985-12-27 1985-12-27 Resistance value detecting circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60297371A JPS62156570A (en) 1985-12-27 1985-12-27 Resistance value detecting circuit

Publications (2)

Publication Number Publication Date
JPS62156570A JPS62156570A (en) 1987-07-11
JPH0580990B2 true JPH0580990B2 (en) 1993-11-11

Family

ID=17845621

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60297371A Granted JPS62156570A (en) 1985-12-27 1985-12-27 Resistance value detecting circuit

Country Status (1)

Country Link
JP (1) JPS62156570A (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01151262U (en) * 1988-04-11 1989-10-19
DE102008001937A1 (en) 2008-05-21 2009-11-26 Robert Bosch Gmbh Windscreen wiper drive and motor vehicle with windshield wiper drive
CN105021944B (en) * 2015-07-17 2018-01-16 上海斐讯数据通信技术有限公司 A kind of low resistance connectivity testing device and method

Also Published As

Publication number Publication date
JPS62156570A (en) 1987-07-11

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