JPH05803B2 - - Google Patents

Info

Publication number
JPH05803B2
JPH05803B2 JP57017354A JP1735482A JPH05803B2 JP H05803 B2 JPH05803 B2 JP H05803B2 JP 57017354 A JP57017354 A JP 57017354A JP 1735482 A JP1735482 A JP 1735482A JP H05803 B2 JPH05803 B2 JP H05803B2
Authority
JP
Japan
Prior art keywords
dielectric
value
present
frequency
composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57017354A
Other languages
Japanese (ja)
Other versions
JPS58135508A (en
Inventor
Katsuhisa Ishikawa
Masanori Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP57017354A priority Critical patent/JPS58135508A/en
Publication of JPS58135508A publication Critical patent/JPS58135508A/en
Priority to JP3328601A priority patent/JPH0679447B2/en
Publication of JPH05803B2 publication Critical patent/JPH05803B2/ja
Granted legal-status Critical Current

Links

Description

【発明の詳細な説明】[Detailed description of the invention]

本発明はQの値が大きく、共振周波数の温度変
化率が小さく、機械的強度の大きな酸化物誘電材
料に関するものである。 近年、高周波用誘電材料は、インピーダンス整
合用コンデンサ、誘電体共振器、フイルター、マ
イクロ波IC用基板等として種々の高周波電子回
路に用いられている。 特に使用周波数領域も準ミリ波、ミリ波領域と
広がり、マイクロ波IC基板等に高誘電率、低損
失の誘電材料を使つた小型化の検討が積極的に進
められている。 特に、従来一般的な誘電材料としてはBaO−
TiO2系、CaTiO3系、SrTiO3系が知られている
が、これらは誘電率が大きすぎるため、マイクロ
波、準ミリ波用IC基板として使用した場合、配
線密度があまりにも細密化され、他の電子素子の
実装が困難となる欠点がある。 また、MgO−CaO−TiO3系材料は誘電率が20
前後であるが、この系はMgTiO3,CaTiO3
TiO2等を夫々単独に焼成して作り、その後、混
合するという工程を取るため、通常の製造工程に
比べて複雑な工程を取らなければならないという
欠点がある。 一方、高周波用の誘電材料としては、2
(Ca1-XZnX)O・y(Nb2-ZTazO5)で表わされる
組成物においてxが0<x1.0,yが0.5y<
1.6,zが0z<2.0の範囲の酸化物誘電材料が
公知である。(特願昭49−39005)この材料は誘電
損失が小さく(すなわち、Qの値が大きく)、誘
電率温度係数が小さい優れた材料である。しか
し、この材料は共振器等に用いる場合に非常に重
要な特性である共振周波数の温度係数については
全く不明であり、さらにマイクロ波用の基板に用
いる場合に要求される機械的強度の値に関しても
データがなく不明であつた。 本発明の目的は、以上の従来材料の欠点を大巾
に改善したものであり、誘電率が大きすぎず、Q
の値が従来の諸材料に比べ、さらに大きく、共振
周波数の温度係数が小さく、機械的強度の大きな
高周波用酸化物誘電材料を提供するものである。 ここで本発明は(CaO)x(ZnO)y(Nb2O5
zで表わされる組成物において、xの値が0.01
x<0.05、yの値が0.43<y0.5456、zの値が
0.4444<z<0.52の組成範囲(ただし、x+y+
z=1.00)にあることを特徴とするものである。
本発明に使用されるCa,Zn,Zb等の化学形態
は、酸化物や炭酸塩等化学的に安定で秤量に便利
な形態を用いるのが望ましい。 本発明を実施例によつて詳細に説明する。 実施例 特開昭58−135508(2) 実施例として次に示す条件にて行つた。すなわ
ち、CaO−ZnO−Nb2O5系組成物で表に示した
各々の組成となる様に秤量し、ボールミルにて約
46時間混合し、1000℃−3時間で仮焼した後、バ
インダーを加えて乾燥・造粒し、1トン/cm3の圧
力で、直径13mmの円柱に圧縮成形後、1160℃〜
1240℃で2時間酸素雰囲気中で、焼成を行い、そ
の後、直径10mm、高さ8mmの円柱に加工し、
6GHz近傍の周波数で誘電体共振器法で誘電率
(εr)、誘電損失(tanδ=1/Q)、共振周波数の
温度変化(fT・K)等の誘電特性を測定した。 測定結果を表に示す。
The present invention relates to an oxide dielectric material having a large Q value, a small temperature change rate of resonance frequency, and high mechanical strength. In recent years, high-frequency dielectric materials have been used in various high-frequency electronic circuits, such as impedance matching capacitors, dielectric resonators, filters, and microwave IC substrates. In particular, the frequency range of use has expanded to the quasi-millimeter wave and millimeter wave ranges, and active efforts are being made to miniaturize microwave IC substrates by using dielectric materials with high permittivity and low loss. In particular, BaO-
TiO 2- based, CaTiO 3 -based, and SrTiO 3- based materials are known, but their dielectric constants are too high, so when used as IC substrates for microwaves and quasi-millimeter waves, the wiring density becomes too fine. There is a drawback that it is difficult to mount other electronic elements. In addition, MgO−CaO−TiO 3 -based materials have a dielectric constant of 20
This system is based on MgTiO 3 , CaTiO 3 ,
Since TiO 2 and the like are produced by firing each component individually and then mixed together, it has the disadvantage that it requires a more complicated process than a normal manufacturing process. On the other hand, as a dielectric material for high frequency, 2
In the composition represented by (Ca 1 -X Zn
1.6, oxide dielectric materials with z in the range 0z<2.0 are known. (Japanese Patent Application No. 49-39005) This material is an excellent material with a small dielectric loss (that is, a large value of Q) and a small temperature coefficient of dielectric constant. However, the temperature coefficient of the resonant frequency, which is a very important characteristic when used in resonators, etc., is completely unknown, and furthermore, the mechanical strength required when used in microwave substrates is unknown. It was also unclear due to lack of data. The purpose of the present invention is to significantly improve the above-mentioned drawbacks of conventional materials, have a not too high dielectric constant, and have a Q
The object of the present invention is to provide an oxide dielectric material for high frequency use, which has a larger value than conventional materials, a small temperature coefficient of resonance frequency, and a high mechanical strength. Here, the present invention is (CaO) x (ZnO) y (Nb 2 O 5 )
In the composition represented by z, the value of x is 0.01
x<0.05, y value is 0.43<y0.5456, z value is
Composition range of 0.4444<z<0.52 (however, x+y+
z=1.00).
As for the chemical forms of Ca, Zn, Zb, etc. used in the present invention, it is desirable to use forms that are chemically stable and convenient for weighing, such as oxides and carbonates. The present invention will be explained in detail by way of examples. Examples JP-A-58-135508 (2) Examples were carried out under the following conditions. That is, a CaO-ZnO-Nb 2 O 5- based composition was weighed to give each composition shown in the table, and approximately
After mixing for 46 hours, calcining at 1000℃ for 3 hours, adding a binder, drying and granulating, compression molding into a cylinder with a diameter of 13mm at a pressure of 1 ton/ cm3 , and then 1160℃~
It was fired at 1240℃ for 2 hours in an oxygen atmosphere, and then processed into a cylinder with a diameter of 10 mm and a height of 8 mm.
Dielectric properties such as dielectric constant (εr), dielectric loss (tan δ=1/Q), and temperature change in resonance frequency (f T ·K) were measured using the dielectric resonator method at a frequency around 6 GHz. The measurement results are shown in the table.

【表】 表に示したように、本発明の請求範囲の組成物
はQの値が、すべて10000以上と非常に大きく、
共振周波数の温度係数も小さい。また、機械的強
度として試料の抗析強度を測定した所、いずれも
1500Kg/cm2以上という優れた値を示した。 一方、本発明の請求範囲に含まれない組成はQ
が小さく、抗折強度も1000Kg/cm2以下であつた。
[Table] As shown in the table, the compositions claimed in the present invention all have very large Q values of 10,000 or more.
The temperature coefficient of the resonant frequency is also small. In addition, when we measured the anti-destructive strength of the sample as a mechanical strength, both
It showed an excellent value of 1500Kg/cm 2 or more. On the other hand, compositions that are not included in the scope of the present invention are Q
was small, and the bending strength was 1000 Kg/cm 2 or less.

【図面の簡単な説明】[Brief explanation of the drawing]

図面は、CaO,ZnO,Nb2O5からなる3成分組
成図を示し、図中のDEFGで囲まれた斜線部分
は、本発明の請求の範囲を示している。
The drawing shows a three-component composition diagram consisting of CaO, ZnO, and Nb 2 O 5 , and the hatched area surrounded by DEFG in the drawing indicates the scope of the present invention.

Claims (1)

【特許請求の範囲】[Claims] 1 (CaO)x(ZnO)y(Nb2O5)zで表わされ
る組成物において、xの値が0.01x<0.05,y
の値が0.43<y0.5456,zの値が0.4444<z<
0.52の組成範囲(ただしx+y+z=1.00)にあ
ることを特徴とする酸化物誘電材料。
1 In the composition represented by (CaO)x(ZnO)y(Nb 2 O 5 )z, the value of x is 0.01x<0.05, y
The value of is 0.43<y0.5456, the value of z is 0.4444<z<
An oxide dielectric material characterized by having a composition in the range of 0.52 (x+y+z=1.00).
JP57017354A 1982-02-05 1982-02-05 Oxide dielectric material Granted JPS58135508A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP57017354A JPS58135508A (en) 1982-02-05 1982-02-05 Oxide dielectric material
JP3328601A JPH0679447B2 (en) 1982-02-05 1991-12-12 Oxide dielectric material

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57017354A JPS58135508A (en) 1982-02-05 1982-02-05 Oxide dielectric material

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP3328601A Division JPH0679447B2 (en) 1982-02-05 1991-12-12 Oxide dielectric material

Publications (2)

Publication Number Publication Date
JPS58135508A JPS58135508A (en) 1983-08-12
JPH05803B2 true JPH05803B2 (en) 1993-01-06

Family

ID=11941705

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57017354A Granted JPS58135508A (en) 1982-02-05 1982-02-05 Oxide dielectric material

Country Status (1)

Country Link
JP (1) JPS58135508A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0712869U (en) * 1993-07-26 1995-03-03 鐘淵化学工業株式会社 Solar-powered building

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5368897A (en) * 1976-11-30 1978-06-19 Nec Corp Oxide dielectric material

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5368897A (en) * 1976-11-30 1978-06-19 Nec Corp Oxide dielectric material

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0712869U (en) * 1993-07-26 1995-03-03 鐘淵化学工業株式会社 Solar-powered building

Also Published As

Publication number Publication date
JPS58135508A (en) 1983-08-12

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