JPH057820B2 - - Google Patents
Info
- Publication number
- JPH057820B2 JPH057820B2 JP58238098A JP23809883A JPH057820B2 JP H057820 B2 JPH057820 B2 JP H057820B2 JP 58238098 A JP58238098 A JP 58238098A JP 23809883 A JP23809883 A JP 23809883A JP H057820 B2 JPH057820 B2 JP H057820B2
- Authority
- JP
- Japan
- Prior art keywords
- secondary electrons
- objective lens
- sample
- electron
- magnetic pole
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000010894 electron beam technology Methods 0.000 claims description 14
- 238000003384 imaging method Methods 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 6
- 238000001514 detection method Methods 0.000 description 5
- 230000005284 excitation Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/244—Detectors; Associated components or circuits therefor
Description
【発明の詳細な説明】
本発明は、２次電子収集効率を向上させた走査
電子顕微鏡に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a scanning electron microscope with improved secondary electron collection efficiency.
近時、透過結像型電子顕微鏡に走査機能を付加
することが多いが、第１図はその様な装置の要部
を示す一例である。図において、１は図示しない
電子銃から放射された電子線であり、該電子線１
は対物レンズの上磁極片と励磁コイル３側に近い
下磁極片４の間に挿入された試料５に照射され
る。６は２次電子検出器であり、シンチレータ、
ライトパイプ、２次電子増倍管等より構成される
検出部７、電極８及び接地電位のシールド筒９よ
り構成され、該電極８はシンチレータの周縁部に
配設された正の電位（例えば10KV）が検出器高
圧電源１０より印加されている。 Recently, a scanning function is often added to a transmission imaging electron microscope, and FIG. 1 is an example showing the main parts of such an apparatus. In the figure, 1 is an electron beam emitted from an electron gun (not shown), and the electron beam 1
is irradiated onto the sample 5 inserted between the upper magnetic pole piece of the objective lens and the lower magnetic pole piece 4 near the excitation coil 3 side. 6 is a secondary electron detector, which includes a scintillator,
It consists of a detection unit 7 composed of a light pipe, a secondary electron multiplier, etc., an electrode 8, and a shield tube 9 at ground potential. ) is applied from the detector high voltage power supply 10.
以上の様に構成された装置において、電子線１
が試料５に照射されると、試料５からの２次電子
ｅは、第１図に示す様に対物レンズ上磁極片２と
対物レンズ下磁極片４で形成される強い磁場にト
ラツプされて、ほぼ電子線１の光軸Ｚを中心に周
囲を回転しながら電子線１の入射方向に向かつて
上昇する。そして、該２次電子ｅは、やがて２次
電子検出器６の電極８が形成する電場の方向に曲
げられ検出部７によつて検出され図示しない陰極
線管によつて２次電子像として表示される。 In the apparatus configured as described above, the electron beam 1
When is irradiated onto the sample 5, the secondary electrons e from the sample 5 are trapped by a strong magnetic field formed by the objective lens upper magnetic pole piece 2 and the objective lens lower magnetic pole piece 4, as shown in FIG. It rises toward the incident direction of the electron beam 1 while rotating around the optical axis Z of the electron beam 1 . Then, the secondary electrons e are eventually bent in the direction of the electric field formed by the electrode 8 of the secondary electron detector 6, detected by the detection unit 7, and displayed as a secondary electron image by a cathode ray tube (not shown). Ru.
一方、電子線１の照射により試料５より発生す
る２次電子ｅはあらゆる方向に放出されるため、
光軸Ｚから大きく外れた２次電子e1，e2は、第１
図に示す様に２次電子検出器６に到達せずに対物
レンズ上磁極片２の内壁に衝突してしまう。又、
その軌跡が電子線光軸Ｚから大きく外れた２次電
子e3もシールド筒９等に衝突する。これらの２次
電子検出器６に到達しない２次電子e1，e2，e3
は、該２次電子が衝突した部分で吸収されたり、
又新たな２次電子を発生させる。そのため、この
２次電子検出器に到達しない２次電子e1等の影響
によつて、２次電子検出器６の検出収集効率を低
下さると共に、２次電子検出器６に到達しない２
次電子e1等が対物レンズ内壁等に衝突することに
よつて新たに発生する２次電子を増加させ、Ｓ／
Ｎを低下させる原因となり、２次電子像などの像
質を悪くする欠点があつた。 On the other hand, since the secondary electrons e generated from the sample 5 by irradiation with the electron beam 1 are emitted in all directions,
The secondary electrons e 1 and e 2 that are far away from the optical axis Z are
As shown in the figure, the secondary electrons collide with the inner wall of the upper magnetic pole piece 2 of the objective lens without reaching the secondary electron detector 6. or,
The secondary electron e 3 whose trajectory deviates significantly from the electron beam optical axis Z also collides with the shield tube 9 and the like. These secondary electrons e 1 , e 2 , e 3 that do not reach the secondary electron detector 6
is absorbed at the part where the secondary electron collides,
Also, new secondary electrons are generated. Therefore, the detection and collection efficiency of the secondary electron detector 6 is reduced due to the influence of the secondary electrons e 1 etc. that do not reach the secondary electron detector 6, and the 2
When the secondary electrons e 1 etc. collide with the inner wall of the objective lens, the number of newly generated secondary electrons is increased, and S/
This has the disadvantage of causing a decrease in N and deteriorating the quality of images such as secondary electron images.
本発明は以上の点に鑑みなされたもので、対物
レンズの上下磁極片間に挿入れさた試料へ電子線
を照射し、該試料より発生する２次電子を対物レ
ンズ上磁極片の上方に配置された２次電子検出器
によつて検出するように構成した走査電子顕微鏡
において、該試料より発生する２次電子を前記２
次電子検出器に収集するための２次電子収集用レ
ンズを前記試料と２次電子検出器との間に設けた
ことを特徴としてる。 The present invention has been made in view of the above points, and consists of irradiating an electron beam onto a sample inserted between the upper and lower magnetic pole pieces of an objective lens, and directing secondary electrons generated from the sample above the upper magnetic pole piece of the objective lens. In a scanning electron microscope configured to detect secondary electrons with a secondary electron detector arranged, secondary electrons generated from the sample are detected by the secondary electron detector arranged above.
The present invention is characterized in that a lens for collecting secondary electrons is provided between the sample and the secondary electron detector to collect the secondary electrons in the secondary electron detector.
以下、本発明の一実施例を添付図面により詳細
する。 Hereinafter, one embodiment of the present invention will be described in detail with reference to the accompanying drawings.
第２図は本発明の一実施例装置の要部の構成断
面図である。尚、第１図と同一部分には同一番号
を付してその説明は省略する。第２図に示す実施
例装置が第１図に示す従来装置と異なる点は、試
料上の２次電子放出点から放出される２次電子を
２次電子検出器６近傍の光軸Ｚ上のＡ点に結像さ
せる電磁レンズ１１を、試料５と２次電子検出器
６との間に設けた点にある。該電磁レンズ１１
は、2eVの近傍にピークを持つ低いエネルギーの
２次電子に対して、所謂遠焦点の弱励磁レンズと
して使用されるため、試料照射用の60KeV程度
のエネルギーを有する電子線１への影響は殆んど
無視できる。 FIG. 2 is a sectional view of a main part of an apparatus according to an embodiment of the present invention. Note that the same parts as in FIG. 1 are given the same numbers and their explanations will be omitted. The difference between the embodiment device shown in FIG. 2 and the conventional device shown in FIG. 1 is that the secondary electrons emitted from the secondary electron emission point on the sample are An electromagnetic lens 11 that focuses an image on point A is provided between the sample 5 and the secondary electron detector 6. The electromagnetic lens 11
is used as a so-called far-focus weak excitation lens for low-energy secondary electrons with a peak around 2eV, so it has little effect on the electron beam 1, which has an energy of about 60KeV for sample irradiation. You can ignore it.
この様に構成された装置では、試料５から発生
した２次電子ｅは対物レンズ上磁極片２と対物レ
ンズ下磁極片４で形成される強い磁場にトラツプ
されて、ほぼ電子線１の光軸Ｚを中心に周囲を回
転しながら電子線１の入射方向に向かつて上昇し
やがて結像点Ａの近傍に到達する。一方、光軸Ｚ
より外れた２次電子e1，e2，e3は、該電磁レンズ
１１によるレンズ作用により結像点Ａの方向に軌
道修正される。ところで、結像点Ａの近傍に配置
された２次電子検出器６の電極８には高電圧が印
加されており、結像点Ａ近傍まで移動した２次電
子ｅや軌道修正された２次電子e1等は、該電極８
が形成する電界に引きつけられて２次電子検出器
６に入射し検出される。そのため、対物レンズ内
壁やシールド筒９に衝突する２次電子が極端に減
少し試料５よりの２次電子収集率が向上する。更
に、対物レンズ内壁に衝突する２次電子e1等によ
つて新たに発生する２次電子が２次電子検出器６
によつて検出されるのが抑えられるためＳ／Ｎを
向上することができ、従つて２次電子像等の像質
を向上することができる。 In the apparatus configured in this way, the secondary electrons e generated from the sample 5 are trapped by a strong magnetic field formed by the objective lens upper magnetic pole piece 2 and the objective lens lower magnetic pole piece 4, and are almost aligned with the optical axis of the electron beam 1. While rotating around Z, it rises in the direction of incidence of the electron beam 1 and eventually reaches the vicinity of the imaging point A. On the other hand, the optical axis Z
The secondary electrons e 1 , e 2 , e 3 that have deviated further are corrected in their orbits in the direction of the imaging point A by the lens action of the electromagnetic lens 11 . By the way, a high voltage is applied to the electrode 8 of the secondary electron detector 6 placed near the imaging point A, and the secondary electrons e that have moved to the vicinity of the imaging point A and the secondary electrons whose trajectory has been corrected are Electrons e 1 etc. are connected to the electrode 8
The electrons are attracted by the electric field formed by the electrons, enter the secondary electron detector 6, and are detected. Therefore, the number of secondary electrons colliding with the inner wall of the objective lens and the shield cylinder 9 is extremely reduced, and the collection rate of secondary electrons from the sample 5 is improved. Furthermore, secondary electrons newly generated by secondary electrons e1 etc. that collide with the inner wall of the objective lens are detected by the secondary electron detector 6.
Since detection by the electron beam is suppressed, the S/N ratio can be improved, and the quality of images such as secondary electron images can be improved.
尚、本発明は以上の実施例に限定されず、例え
ば本実施例においては対物レンズの内側に２次電
子収集用の電磁レンズを設けたが、該２次電子収
集用の電磁レンズにかえて、第３図に示すように
２次電子に対して結像点Ａを得るように対物レン
ズにギヤツプΔGを設けても同様な効果を得るこ
とができる。 Note that the present invention is not limited to the above-described embodiments; for example, in this embodiment, an electromagnetic lens for collecting secondary electrons was provided inside the objective lens, but instead of the electromagnetic lens for collecting secondary electrons, A similar effect can be obtained by providing a gap ΔG in the objective lens so as to obtain an imaging point A for the secondary electrons, as shown in FIG.
本発明によれば、２次電子収集用レンズを光軸
Ｚ上且つ上磁極片内部に設置したので、２次電子
収集用レンズが試料を見込む立体角が大きいもの
となり、対物レンズ内壁に衝突する２次電子量が
減少する。この結果、試料よりの２次電子収集率
が向上する。更に、対物レンズ内壁に衝突する２
次電子によつて新たに発生する２次電子が２次電
子検出器によつて検出されるのが抑えられるため
Ｓ／Ｎを向上することができ、従つて２次電子像
の像質を更に向上することができる。 According to the present invention, since the secondary electron collecting lens is installed on the optical axis Z and inside the upper magnetic pole piece, the solid angle of the secondary electron collecting lens looking into the sample is large, and the secondary electron collecting lens collides with the inner wall of the objective lens. The amount of secondary electrons decreases. As a result, the collection rate of secondary electrons from the sample is improved. Furthermore, 2 collides with the inner wall of the objective lens.
Since the secondary electrons newly generated by the secondary electrons are suppressed from being detected by the secondary electron detector, the S/N ratio can be improved, and the image quality of the secondary electron image can be further improved. can be improved.
第１図は従来装置の構成断面図、第２図は本発
明の一実施例を示す構成断面図、第３図は他の実
施例を説明するための図である。
１……電子線、２……対物レンズ上磁極片、３
……励磁コイル、４……対物レンズ下磁極片、５
……試料、６……２次電子検出器、７……検出
部、８……電極、９……シールド筒、１０……検
出器高圧電源。
FIG. 1 is a sectional view of a conventional device, FIG. 2 is a sectional view of an embodiment of the present invention, and FIG. 3 is a diagram for explaining another embodiment. 1... Electron beam, 2... Magnetic pole piece on the objective lens, 3
... Excitation coil, 4 ... Objective lens lower magnetic pole piece, 5
... Sample, 6 ... Secondary electron detector, 7 ... Detection section, 8 ... Electrode, 9 ... Shield cylinder, 10 ... Detector high voltage power supply.
Claims (1)
へ電子線を照射し、該試料より発生する２次電子
を対物レンズ上磁極片の上片に配置された２次電
子検出器によつて検出するように構成した走査電
子顕微鏡において、該試料より発生する２次電子
を前記２次電子検出器に収集するための２次電子
収集用レンズを前記光軸Ｚ上且つ上磁極片内部に
設けたことを特徴とする走査電子顕微鏡。1. A sample inserted between the upper and lower magnetic pole pieces of the objective lens is irradiated with an electron beam, and secondary electrons generated from the sample are detected by a secondary electron detector placed on the upper piece of the upper magnetic pole piece of the objective lens. In a scanning electron microscope configured to A scanning electron microscope characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23809883A JPS60130044A (en) | 1983-12-16 | 1983-12-16 | Scanning type electron microscope |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23809883A JPS60130044A (en) | 1983-12-16 | 1983-12-16 | Scanning type electron microscope |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60130044A JPS60130044A (en) | 1985-07-11 |
| JPH057820B2 true JPH057820B2 (en) | 1993-01-29 |
Family
ID=17025138
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23809883A Granted JPS60130044A (en) | 1983-12-16 | 1983-12-16 | Scanning type electron microscope |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60130044A (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3638682A1 (en) * | 1986-11-13 | 1988-05-19 | Siemens Ag | SPECTROMETER LENS FOR CARPUSULAR BEAM MEASUREMENT TECHNOLOGY |
| EP0290620B1 (en) * | 1986-11-28 | 1994-10-12 | Nippon Telegraph And Telephone Corporation | Apparatus for observation using charged particle beams and method of surface observation using charged particle beams |
| JP2010055756A (en) | 2008-08-26 | 2010-03-11 | Hitachi High-Technologies Corp | Method of irradiating charged corpuscular particle beam, and charged corpuscular particle beam apparatus |
| JP5478683B2 (en) * | 2012-08-27 | 2014-04-23 | 株式会社日立ハイテクノロジーズ | Charged particle beam irradiation method and charged particle beam apparatus |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52162853U (en) * | 1976-06-04 | 1977-12-09 |
-
1983
- 1983-12-16 JP JP23809883A patent/JPS60130044A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60130044A (en) | 1985-07-11 |
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