JPH057814B2 - - Google Patents
Info
- Publication number
- JPH057814B2 JPH057814B2 JP1173055A JP17305589A JPH057814B2 JP H057814 B2 JPH057814 B2 JP H057814B2 JP 1173055 A JP1173055 A JP 1173055A JP 17305589 A JP17305589 A JP 17305589A JP H057814 B2 JPH057814 B2 JP H057814B2
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- plasma
- plasma generation
- generation chamber
- target
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000010884 ion-beam technique Methods 0.000 claims description 22
- 238000010894 electron beam technology Methods 0.000 claims description 13
- 239000000919 ceramic Substances 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 230000000149 penetrating effect Effects 0.000 claims 1
- 239000007789 gas Substances 0.000 description 13
- 238000010586 diagram Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- HVTQDSGGHBWVTR-UHFFFAOYSA-N 2-[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]-3-phenylmethoxypyrazol-1-yl]-1-morpholin-4-ylethanone Chemical compound C(C1=CC=CC=C1)OC1=NN(C=C1C=1C=NC(=NC=1)NC1CC2=CC=CC=C2C1)CC(=O)N1CCOCC1 HVTQDSGGHBWVTR-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 230000005264 electron capture Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
Landscapes
- Electron Sources, Ion Sources (AREA)
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明はイオンビーム照射装置、特にイオンビ
ームによるCVD、エツチング、アツシング等の
処理を目的とするイオンビーム照射装置に関する
ものである。DETAILED DESCRIPTION OF THE INVENTION (Industrial Application Field) The present invention relates to an ion beam irradiation device, and particularly to an ion beam irradiation device for processing such as CVD, etching, and ashing using an ion beam.
（従来技術）
第３図は従来の例えばJJAP Vol.25，No.３，
March，’86，pp.L252−L253に記載されている
イオンビーム照射装置を示し、１はLaB6製カソ
ード、２はアノード、３はカソード−アノード間
に接続した放電用電源、４はグリツド、５はアノ
ード−グリツド間に接続したプラズマ中の電子引
き出し用電源、６はターゲツト、８はアノード−
ターゲツト間に接続したターゲツト電源、７は容
器、９，１０はスリツト、１１，１２はガス導入
口、１３は電子ビーム、１４はイオンビーム、１
５，１６，１７，１８，１９は空間、２０はポン
プへの排気口である。(Prior art) Figure 3 shows the conventional technology, for example, JJAP Vol.25, No.3.
March, '86, pp. L252-L253, in which 1 is a cathode made of LaB 6 , 2 is an anode, 3 is a discharge power supply connected between the cathode and anode, 4 is a grid, 5 is a power supply for extracting electrons from the plasma connected between the anode and the grid, 6 is the target, and 8 is the anode.
A target power supply connected between the targets, 7 is a container, 9 and 10 are slits, 11 and 12 are gas inlets, 13 is an electron beam, 14 is an ion beam, 1
5, 16, 17, 18, and 19 are spaces, and 20 is an exhaust port to the pump.
このような従来のイオンビーム照射装置におい
ては容器７内が減圧され、ガス導入口１１より放
電用ガスが空間１５に1Torr程度に入れられる。
この時空間１６は10mTorr、空間１７は1mTorr
とする。空間１８にはガス導入口１２よりワーキ
ングガス、例えば酸素ガスが10-2Torr程度まで
入れられる。空間１９は10-4〜10-5Torrにポン
プ２０により排気される。放電はカソード１とア
ノード２間で開始させられ電子ビーム１３が
LaB6製カソード１からアノード２に向かい形成
される。空間１８中のワーキングガスはアノード
２とグリツド４とにより引き出された電子ビーム
１３による電離され濃密なプラズマになる。プラ
ズマ中の所望イオンはターゲツト電源８により引
き出されターゲツト６に導かれ照射される。この
ような従来のイオンビーム照射装置においてはイ
オン引き出しグリツド４の空間１８側に電子ビー
ムが飛来しグリツド４にできるイオンの空間電荷
層が中和され大電流・低圧イオンビーム１４を引
き出せる利点があつた。 In such a conventional ion beam irradiation device, the pressure inside the container 7 is reduced, and discharge gas is introduced into the space 15 through the gas inlet 11 at a pressure of about 1 Torr.
This space-time 16 is 10 mTorr, and space 17 is 1 mTorr.
shall be. A working gas, such as oxygen gas, is introduced into the space 18 from the gas inlet 12 to a pressure of about 10 -2 Torr. Space 19 is evacuated to 10 -4 to 10 -5 Torr by pump 20 . The discharge is started between the cathode 1 and the anode 2, and the electron beam 13 is
It is formed from a cathode 1 made of LaB 6 to an anode 2. The working gas in the space 18 is ionized by the electron beam 13 extracted by the anode 2 and the grid 4, and becomes a dense plasma. Desired ions in the plasma are extracted by a target power source 8, guided to a target 6, and irradiated. In such a conventional ion beam irradiation device, the electron beam flies into the space 18 side of the ion extraction grid 4, and the space charge layer of ions formed in the grid 4 is neutralized, which has the advantage of being able to extract a high-current, low-pressure ion beam 14. Ta.
（発明が解決しようとする課題）
然しながらこのような従来のイオンビーム照射
装置においてはカソードとしてLaB6材を使用す
るためその保守が大変であつた。更に高濃度の電
子ビームを生成するため、上述したような各室の
圧力を維持するためスリツト、電極を単孔形式に
する必要があり、このため得られるイオンビーム
径を大きくする事は不可能であつた。(Problems to be Solved by the Invention) However, such conventional ion beam irradiation equipment uses LaB 6 material as a cathode, making maintenance difficult. Furthermore, in order to generate a highly concentrated electron beam, it is necessary to use single-hole slits and electrodes to maintain the pressure in each chamber as described above, and for this reason, it is impossible to increase the diameter of the resulting ion beam. It was hot.
本発明は上記の欠点を除くようにしたものであ
る。 The present invention seeks to eliminate the above-mentioned drawbacks.
（課題を解決するための手段）
本発明のイオンビーム照射装置は、高周波電流
を流すようにした高周波コイルにより10-1〜10-5
Torrの圧力でプラズマを発生する機構と、この
プラズマ発生機構によつてプラズマが発生される
プラズマ発生室と、ターゲツト電極と、前記プラ
ズマ発生室と前記ターゲツト電極間に互いに離間
して順次介挿された第３、第１及び第２の多孔状
電極と、この第１及び第２の電極によつて挟まれ
るプラズマ形成空間と、この空間に設けた電子ビ
ーム捕捉用マルチカスプ磁場発生手段と、上記第
３電極と第１電極間及び第２電極とターゲツト電
極間に夫々電圧を印加する電源とより成ることを
特徴とする。(Means for Solving the Problems) The ion beam irradiation device of the present invention uses a high-frequency coil through which a high- frequency current flows .
A mechanism for generating plasma at a pressure of Torr, a plasma generation chamber in which plasma is generated by the plasma generation mechanism, a target electrode, and the plasma generation chamber and the target electrode are interposed in sequence at a distance from each other. a plasma forming space sandwiched between the first and second porous electrodes; a multi-cusp magnetic field generating means for capturing an electron beam provided in this space; It is characterized by comprising three electrodes and a power source that applies voltages between the first electrode and between the second electrode and the target electrode, respectively.
また本発明のイオンビーム照射装置は、10-1〜
10-5Torrの圧力でプラズマを発生するプラズマ
発生室と、このプラズマ発生室に配置したマイク
ロ波を流すようにした電極と、上記プラズマ発生
室に電子サイクロン共鳴条件を満足する磁場を発
生せしめるための磁場発生機構と、ターゲツト電
極と、前記プラズマ発生室と前記ターゲツト電極
間に互いに離間して順次介挿された第３、第１及
び第２の多孔状電極と、この第１及び第２の電極
によつて挟まれるプラズマ形成空間と、この空間
に設けた電子ビーム捕捉用マルチカスプ磁場発生
手段と、上記第３電極と第１電極間及び第２電極
とターゲツト電極間に夫々電圧を印加する電源と
より成ることを特徴とする。 Further, the ion beam irradiation device of the present invention has an
A plasma generation chamber that generates plasma at a pressure of 10 -5 Torr, an electrode placed in this plasma generation chamber that allows microwaves to flow, and a magnetic field that satisfies electron cyclone resonance conditions in the plasma generation chamber. a magnetic field generation mechanism, a target electrode, third, first and second porous electrodes which are inserted in sequence at a distance between the plasma generation chamber and the target electrode; A plasma forming space sandwiched between the electrodes, a multi-cusp magnetic field generating means for capturing electron beams provided in this space, and a power source for applying voltages between the third electrode and the first electrode and between the second electrode and the target electrode, respectively. It is characterized by consisting of.
（作用）
本発明のイオンビーム照射装置においてはプラ
ズマ発生手段として低圧、例えば10-4Torr〜
10-3Torrでも十分濃密なプラズマを得る事の出
来るRF又はECR法を施用するためのワーキング
ガスの電離空間の圧力制御が容易となり電極とし
て多孔状電極を使用出来る。更にワーキングガス
電離空間を囲むよう電子捕捉手段を設けた為電子
が高効率に捕捉されワーキングガスを効率よく電
離し高密度プラズマを生成することが出来る為構
成が簡単で然も大面積・低エネルギー大電流イオ
ンビームを超長寿命に得る事ができる。(Function) In the ion beam irradiation apparatus of the present invention, low pressure, for example 10 -4 Torr to
It is easy to control the pressure in the ionization space of the working gas for applying RF or ECR methods that can obtain sufficiently dense plasma even at 10 -3 Torr, and porous electrodes can be used as electrodes. Furthermore, since an electron capture means is provided to surround the working gas ionization space, electrons are captured with high efficiency, and the working gas can be efficiently ionized to generate high-density plasma, so the configuration is simple, large area, and low energy. It is possible to obtain a high current ion beam with an extremely long life.
（実施例） 以下図面によつて本発明の実施例を説明する。(Example) Embodiments of the present invention will be described below with reference to the drawings.
本発明においては第１図に示すようにカソード
１の代わりに容器５８外にプラズマ発生用の高周
波コイル５１０を配置し、この高周波コイル５１
０に例えば13.56MHzの高周波電流を流すことに
よつて容器５８内にプラズマ発生室５１１を形成
し、このプラズマ発生室５１１とターゲツト電極
５５間に互いに離間して第１、第２電極５３，５
４を介挿し、上記プラズマ発生室５１１と上記第
３電極５１２と上記第１電極５３間に電圧源５６
を接続せしめる。 In the present invention, as shown in FIG. 1, a high frequency coil 510 for plasma generation is arranged outside the container 58 instead of the cathode 1.
A plasma generation chamber 511 is formed in the container 58 by passing a high frequency current of, for example, 13.56MHz into the target electrode 55.
A voltage source 56 is inserted between the plasma generation chamber 511, the third electrode 512, and the first electrode 53.
Connect.
プラズマ発生室５１１に形成されるRFプラズ
マ中の電子が第３電極５１２と第１電極５３間に
電圧源５６によつて印加される電圧により引き出
される電子ビームは第１、第２電極５３，５４に
よつて囲まれる空間に導入されたワーキングガス
５９を電離しプラズマを作る。 Electrons in the RF plasma formed in the plasma generation chamber 511 are extracted by the voltage applied between the third electrode 512 and the first electrode 53 by the voltage source 56, and the electron beam is extracted from the first and second electrodes 53, 54. The working gas 59 introduced into the space surrounded by is ionized to create plasma.
本発明ではその空間におけるプラズマ生成効率
を高めるため一例として空間を囲んでマルチカス
プ磁場発生手段５１３を設ける。 In the present invention, as an example, a multi-cusp magnetic field generating means 513 is provided surrounding the space in order to increase plasma generation efficiency in the space.
又、第１、第２及び第３電極５３，５４，５１
２としてはセラミツク板の両面に又はターゲツト
側の一面に銅板を被着し、電子ビーム通過用の孔
を多数設けたものを用いる。 Moreover, the first, second and third electrodes 53, 54, 51
For example 2, a ceramic plate with a copper plate adhered to both sides or one side of the target side and provided with a large number of holes for the electron beam to pass through is used.
本発明の第２の実施例においては第２図に示す
ように上記プラズマ発生室５１１中にリジタノコ
イル５１５を配置し、このリジタノコイル５１５
に例えば2400MHzのマイクロ波を流すようにす
ると共に、上記第１の実施例における高周波コイ
ル５１０の代わりに電子サイクロトロン共鳴条件
を満足する磁場発生手段５１４を設け、上記プラ
ズマ発生室５１１に磁場を作用せしめる。 In the second embodiment of the present invention, as shown in FIG. 2, a rigid coil 515 is arranged in the plasma generation chamber 511.
For example, a microwave of 2400 MHz is applied to the plasma generating chamber 511, and a magnetic field generating means 514 that satisfies the electron cyclotron resonance condition is provided in place of the high frequency coil 510 in the first embodiment to apply a magnetic field to the plasma generating chamber 511. .
この第２の実施例によれば上記第１の実施例と
同様の効果を得ることが出来る。 According to this second embodiment, the same effects as those of the first embodiment can be obtained.
（発明の効果）
容器ように本発明のイオンビーム照射装置のよ
れば汚染が無く長寿命で且つ効率の良いイオンビ
ームを容易に得ることが出来、第１電極５３より
飛来する電子ビームはマルチカスプ磁場により捕
捉され電子の飛行時間が大幅に大きくなり、空間
中のワーキングガスを高効率で電離し、濃密なプ
ラズマを作ることができる等大きな利益がある。(Effects of the Invention) According to the ion beam irradiation device of the present invention, it is possible to easily obtain an ion beam that is free from contamination, has a long life, and is highly efficient, as shown in the container. This greatly increases the flight time of the captured electrons, ionizing the working gas in space with high efficiency, and creating a dense plasma, which has great benefits.
第１図は本発明のイオンビーム照射装置の説明
図、第２図は本発明の他の実施例におけるイオン
ビーム照射装置の説明図、第３図は従来のイオン
ビーム照射装置の説明図である。
１……カソード、２……アノード、３，５……
電源、４……グリツド、６……ターゲツト、７…
…容器、８……ターゲツト電源、９，１０……ス
リツト、１１，１２……ガス導入口、１３……電
子ビーム、１４……イオンビーム、１５，１６，
１７，１８，１９……空間、２０……排気口、５
８……容器、５３……第１電極、５４……第２電
極、５５……ターゲツト電極、５６……電圧源、
５９……ワーキングガス、５１０……高周波コイ
ル、５１１……プラズマ発生室、５１２……第３
電極、５１３，５１４……磁場発生手段、５１５
……リジタノコイル。
FIG. 1 is an explanatory diagram of an ion beam irradiation device of the present invention, FIG. 2 is an explanatory diagram of an ion beam irradiation device in another embodiment of the present invention, and FIG. 3 is an explanatory diagram of a conventional ion beam irradiation device. . 1... cathode, 2... anode, 3, 5...
Power supply, 4...Grid, 6...Target, 7...
...Container, 8...Target power supply, 9,10...Slit, 11,12...Gas inlet, 13...Electron beam, 14...Ion beam, 15,16,
17, 18, 19...Space, 20...Exhaust port, 5
8... Container, 53... First electrode, 54... Second electrode, 55... Target electrode, 56... Voltage source,
59... Working gas, 510... High frequency coil, 511... Plasma generation chamber, 512... Third
Electrode, 513, 514...Magnetic field generating means, 515
...Rigidano coil.
Claims (1)
より10-1〜10-5Torrの圧力でプラズマを発生す
る機構と、このプラズマ発生機構によつてプラズ
マが発生されるプラズマ発生室と、ターゲツト電
極と、前記プラズマ発生室と前記ターゲツト電極
間に互いに離間して順次介挿された第３、第１及
び第２の多孔状電極と、この第１及び第２の電極
によつて挟まれるプラズマ形成空間と、この空間
に設けた電子ビーム捕捉用マルチカスプ磁場発生
手段と、上記第３電極と第１電極間及び第２電極
とターゲツト電極間に夫々電圧を印加する電源と
より成ることを特徴とするイオンビーム照射装
置。 ２ 10-1〜10-5Torrの圧力でプラズマを発生す
るプラズマ発生室と、このプラズマ発生室に配置
したマイクロ波を流すようにした電極と、上記プ
ラズマ発生室に電子サイクロン共鳴条件を満足す
る磁場を発生せしめるための磁場発生機構と、タ
ーゲツト電極と、前記プラズマ発生室と前記ター
ゲツト電極間に互いに離間して順次介挿された第
３、第１及び第２の多孔状電極と、この第１及び
第２の電極によつて挟まれるプラズマ形成空間
と、この空間に設けた電子ビーム捕捉用マルチカ
スプ磁場発生手段と、上記第３電極と第１電極間
及び第２電極とターゲツト電極間に夫々電圧を印
加する電源とより成ることを特徴とするイオンビ
ーム照射装置。 ３ 上記第１、第２及び第３電極がセラミツク板
と少なくともそのターゲツト側の一面に被着した
金属板と、これらを貫通する電子ビーム通過用の
多数の孔とより成る請求項１又は２記載のイオン
ビーム照射装置。[Claims] 1. A mechanism for generating plasma at a pressure of 10 -1 to 10 -5 Torr using a high-frequency coil through which a high-frequency current flows, and a plasma generation chamber in which plasma is generated by this plasma generation mechanism. , a target electrode, third, first and second porous electrodes which are inserted in sequence at a distance between the plasma generation chamber and the target electrode, and the first and second electrodes. Consisting of a plasma formation space sandwiched between them, a multi-cusp magnetic field generating means for capturing electron beams provided in this space, and a power source for applying voltages between the third electrode and the first electrode and between the second electrode and the target electrode, respectively. An ion beam irradiation device featuring: 2 A plasma generation chamber that generates plasma at a pressure of 10 -1 to 10 -5 Torr, an electrode placed in this plasma generation chamber that allows microwaves to flow, and a plasma generation chamber that satisfies electron cyclone resonance conditions. a magnetic field generating mechanism for generating a magnetic field; a target electrode; third, first and second porous electrodes which are successively inserted between the plasma generation chamber and the target electrode at a distance from each other; a plasma forming space sandwiched between the first and second electrodes, a multi-cusp magnetic field generating means for electron beam capture provided in this space, and between the third electrode and the first electrode and between the second electrode and the target electrode, respectively. An ion beam irradiation device characterized by comprising a power source that applies voltage. 3. The first, second and third electrodes are comprised of a ceramic plate, a metal plate adhered to at least one surface of the ceramic plate on the target side, and a large number of holes penetrating these for electron beam passage. ion beam irradiation equipment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1173055A JPH0340342A (en) | 1989-07-06 | 1989-07-06 | Ion beam irradiation device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1173055A JPH0340342A (en) | 1989-07-06 | 1989-07-06 | Ion beam irradiation device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0340342A JPH0340342A (en) | 1991-02-21 |
| JPH057814B2 true JPH057814B2 (en) | 1993-01-29 |
Family
ID=15953382
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1173055A Granted JPH0340342A (en) | 1989-07-06 | 1989-07-06 | Ion beam irradiation device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0340342A (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61290629A (en) * | 1985-06-18 | 1986-12-20 | Rikagaku Kenkyusho | Electron beam excitation ion source |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62193660U (en) * | 1986-05-30 | 1987-12-09 |
-
1989
- 1989-07-06 JP JP1173055A patent/JPH0340342A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61290629A (en) * | 1985-06-18 | 1986-12-20 | Rikagaku Kenkyusho | Electron beam excitation ion source |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0340342A (en) | 1991-02-21 |
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