JPH0340342A - Ion beam irradiation device - Google Patents
Ion beam irradiation deviceInfo
- Publication number
- JPH0340342A JPH0340342A JP1173055A JP17305589A JPH0340342A JP H0340342 A JPH0340342 A JP H0340342A JP 1173055 A JP1173055 A JP 1173055A JP 17305589 A JP17305589 A JP 17305589A JP H0340342 A JPH0340342 A JP H0340342A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- ion beam
- beam irradiation
- electron beam
- plasma generation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000010884 ion-beam technique Methods 0.000 title claims description 29
- 238000010894 electron beam technology Methods 0.000 claims abstract description 20
- 239000000919 ceramic Substances 0.000 claims abstract description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 239000010949 copper Substances 0.000 claims description 5
- 238000012423 maintenance Methods 0.000 abstract description 3
- 230000002708 enhancing effect Effects 0.000 abstract 1
- 238000002347 injection Methods 0.000 abstract 1
- 239000007924 injection Substances 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 13
- 238000010586 diagram Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- MGGVALXERJRIRO-UHFFFAOYSA-N 4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]-2-[2-oxo-2-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethyl]-1H-pyrazol-5-one Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C=1C(=NN(C=1)CC(=O)N1CC2=C(CC1)NN=N2)O MGGVALXERJRIRO-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 229910025794 LaB6 Inorganic materials 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 230000005264 electron capture Effects 0.000 description 1
- 238000010893 electron trap Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
Landscapes
- Electron Sources, Ion Sources (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明はイオンビーム照射装置、特にイオンビームによ
るＣＶＤ、エツチング、アッシング等の処理を目的とす
るイオンビーム照射装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to an ion beam irradiation apparatus, and particularly to an ion beam irradiation apparatus for processing such as CVD, etching, and ashing using an ion beam.
（従来技術）
第３図は従来の例えばＪＪ八へ Ｖｏｌ、２５． Ｎｏ
、３＋Ｍａｒｃｈ、 ’８６． ｐｌｌ、 Ｌ２５２−
Ｌ２５３に記載されているイオンビーム照射装置を示し
、１はＬａ１）．製カソード、２はアノード、３はカソ
ード−アノード間に接続した放電用電源、４はグリッド
、５はアノードグリノド間に接続したプラズマ中の電子
引き出し用電源、６はターゲット、８はアノード−ター
ゲット間に接続したターゲット電源、７は容器、９゜１
０はスリット、１）．１２はガス導入口、１３は電子ビ
ーム、１４はイオンビーム、１５，１６゜１７．１８．
１９は空間、２０はポンプへの排気口である。(Prior Art) FIG. 3 shows the conventional art, for example, to JJ8 Vol. 25. No
, 3+March, '86. pll, L252-
1 indicates the ion beam irradiation device described in La1).L253. 2 is an anode, 3 is a discharge power source connected between the cathode and the anode, 4 is a grid, 5 is a power source for extracting electrons in the plasma connected between the anode grid, 6 is a target, and 8 is an anode-target. Target power supply connected between, 7 is the container, 9゜1
0 is slit, 1). 12 is a gas inlet, 13 is an electron beam, 14 is an ion beam, 15, 16° 17. 18.
19 is a space, and 20 is an exhaust port to the pump.
このような従来のイオンビーム照射装置においては容器
７内が減圧され、ガス導入口１）より放電用ガスが空間
１５にｌ Ｔｏｒｒ程度に入れられる。In such a conventional ion beam irradiation apparatus, the pressure inside the container 7 is reduced, and discharge gas is introduced into the space 15 from the gas inlet 1) at a pressure of about 1 Torr.
この時空間１６は１０−↑ｏｒｒ、空間１７はｌ ＋ｍ
Ｔｏｒｒとする。空間１８にはガス導入口１２よりワー
キングガス、例えば酸素ガスが１０−”Ｔｏｒｒ程度ま
で入れられる。空間１９は１０−１〜１０−５Ｔｏｒｒ
にポンプ２０により排気される。放電はカソード１とア
ノード２間で開始させられ電子ビーム１３がＬａＢ６製
カソード１からアノード２に向かい形式される。空間１
８中のワーキングガスはアノード２とグリッド４とによ
り引き出された電子ビーム１３により電離され濃密なプ
ラズマになる。プラズマ中の所望イオンはターゲット電
源８により引き出されターゲット６に導かれ照射される
。このような従来のイオンビーム照射装置においてはイ
オン引き出しグリッド４の空間１８側に電子ビームが飛
来しグリッド４にできるイオンの空間電荷層が中和され
大電流・低圧イオンビーム１４を引き出セる利点があっ
た。This space-time 16 is 10-↑orr, and space 17 is l +m
Torr. Working gas, such as oxygen gas, is introduced into the space 18 from the gas inlet 12 to a pressure of about 10-'' Torr.The space 19 has a pressure of about 10-1 to 10-5 Torr.
It is evacuated by the pump 20. A discharge is initiated between the cathode 1 and the anode 2, and an electron beam 13 is directed from the LaB6 cathode 1 to the anode 2. space 1
The working gas in 8 is ionized by the electron beam 13 extracted by the anode 2 and the grid 4, and becomes a dense plasma. Desired ions in the plasma are extracted by a target power source 8, guided to a target 6, and irradiated. In such a conventional ion beam irradiation device, an electron beam flies into the space 18 side of the ion extraction grid 4, neutralizes the ion space charge layer formed on the grid 4, and extracts a high current/low pressure ion beam 14. There were advantages.
（発明が解決しようとする課題）
然しなからこのような従来のイオンビーム照射装置にお
いてはカソードとしてＬａｖａ材を使用するためその保
守が大変であった。更に高濃度の電子ビームを生成する
ため、上述したような各室の圧力を維持するためスリッ
ト、電極を単孔形式にする必要があり、このため得られ
るイオンビーム径を大きくする事は不可能であった。(Problems to be Solved by the Invention) However, in such a conventional ion beam irradiation device, since Lava material is used as a cathode, maintenance thereof is difficult. Furthermore, in order to generate a highly concentrated electron beam, it is necessary to use single-hole slits and electrodes in order to maintain the pressure in each chamber as described above, making it impossible to increase the diameter of the resulting ion beam. Met.
本発明は上記の欠点を除くようにしたものである。The present invention seeks to eliminate the above-mentioned drawbacks.
（課題を解決するための手段）
本発明イオンビーム照射装置は１０−１〜１Ｏ−ＳＴｏ
ｒｒの圧力でプラズマを発生する機構と、このプラズマ
発生機構によってプラズマが発生されるプラズマ発生室
と、ターゲット電極と、前記プラズマ発生室と前記ター
ゲット電極間に互いに離間して順次介挿された第３．第
１及び第２電極と、この第１及び第２電極によって挟ま
れる空間に設けた電子ビームｈｌｔ促ａ横と、上記第３
電極と第１電極間及び第２？ｉｔ極とターゲット電極間
に夫々電圧を印加する電源とより成ることを特徴とする
。(Means for Solving the Problems) The ion beam irradiation apparatus of the present invention has 10-1 to 1O-STo.
a mechanism for generating plasma at a pressure of rr; a plasma generation chamber in which plasma is generated by the plasma generation mechanism; a target electrode; 3. the first and second electrodes, the electron beam hlt support a horizontally provided in the space sandwiched by the first and second electrodes, and the third
Between the electrode and the first electrode and the second? It is characterized by comprising a power source that applies a voltage between the IT electrode and the target electrode, respectively.
（作 用）
本発明のイオンビーム照１（装置においてはプラズマ発
生手段として低圧、例えば１０−５Ｔｏｒｒ〜１０−”
丁ｏｒｒでも十分濃密なプラズマを得る事の出来るＲＦ
又はＦ、ＣＲ法を使用するためワーキングガスの電離空
間の圧力制御が容易となり電極として多孔状電極を使用
出来る。更にワーキングガス電離空間を囲むよう電子捕
捉手段を設けた為電子が高効率に捕捉されワーキングガ
スを効率よく電離し高密度プラズマを生成することが出
来る為構成が簡単で然も大面積・低エネルギー大電流イ
オンビームを超長寿命に得る事ができる。(Function) The ion beam irradiation device 1 of the present invention (in the apparatus, low pressure, for example 10-5 Torr to 10-''
RF that can obtain a sufficiently dense plasma even with a small orr
Alternatively, since the F,CR method is used, the pressure in the ionization space of the working gas can be easily controlled and a porous electrode can be used as the electrode. Furthermore, since an electron capture means is provided to surround the working gas ionization space, electrons are captured with high efficiency, and the working gas can be efficiently ionized to generate high-density plasma, so the configuration is simple, large area, and low energy. It is possible to obtain a high current ion beam with an extremely long life.
（実 施 例） 以下図面によって本発明の詳細な説明する。(Example) The present invention will be explained in detail below with reference to the drawings.
本発明においては第１図に示すようにカソード１の代わ
りに容器５日外にプラズマ発生用の高周波コイル５１０
を配置し、この高周波コイル５１０に例えば１３．５６
Ｍ）ｌｚの高周波電流を流すことによって容器５８内
にプラズマ発生室５１）を形成し、このプラズマ発生室
５１）とターゲソト電極５５間に互いに離間して第１．
第２７１）極５３．５４を介神し、上記プラズマ発生室
５１）と上記第１電極５３間に第３電極５１２を配置し
、この第３電極５１２と上記第１電極５３間に電圧源５
６を接続せしめる。In the present invention, as shown in FIG. 1, instead of the cathode 1, a high frequency coil 510 for plasma generation is installed outside the container for 5 days.
For example, 13.56
A plasma generation chamber 51) is formed in the container 58 by flowing a high frequency current of M)lz, and a first.
271) A third electrode 512 is arranged between the plasma generation chamber 51) and the first electrode 53 through the poles 53 and 54, and a voltage source 512 is arranged between the third electrode 512 and the first electrode 53.
Connect 6.
プラズマ発生室５１）に形成されるＲＦプラズマ中の電
子が第３電極５１２と第１電極５３間に電圧源５６によ
って印加される冗圧により引き出される電子ビームは第
１．第２電極５３．５４によって囲まれる空間に導入さ
れたワーキングガス５９をＮＨしプラズマを作る。Electrons in the RF plasma formed in the plasma generation chamber 51) are extracted by the redundant pressure applied between the third electrode 512 and the first electrode 53 by the voltage source 56, and the electron beam is extracted from the first. The working gas 59 introduced into the space surrounded by the second electrodes 53 and 54 is NH and plasma is created.
本発明ではその空間におけるプラズマ生成効率を高める
ため一例として空間を囲んでマルチカスプ磁場発生手段
５１３を設ける。In the present invention, as an example, a multi-cusp magnetic field generating means 513 is provided surrounding the space in order to increase plasma generation efficiency in the space.
本発明のイオンビーム照射装置は上記のような構成であ
るから第１電極５３より飛来する電子ビームはプラズマ
を囲むマルチカスプ磁場によす捕）足され電子の飛行時
間が大幅に大きくなりその空間中のワーキングガスを高
効率で電離し濃密なプラズマを作る。Since the ion beam irradiation device of the present invention has the above-described configuration, the electron beam coming from the first electrode 53 is trapped by the multi-cusp magnetic field surrounding the plasma, and the flight time of the electrons is greatly increased, causing the electron beam to travel through the space. ionizes working gas with high efficiency to create dense plasma.
本実施例では電子捕捉手段としてマルチカスプ磁場配位
を用いるが、具体的には電子の飛行距離を効果的に伸ば
す手段なら何を使用しても良い。In this embodiment, multi-cusp magnetic field configuration is used as the electron trapping means, but any means that effectively extends the flight distance of electrons may be used.
又第１．第３電極５３，５１２としてはセラミック板の
両面に又はターゲット側の一面に銅板を被着し、電子ビ
ーム通過用の孔を多数設けたものを用いる。Also, number 1. As the third electrodes 53 and 512, a ceramic plate with a copper plate attached to both surfaces or one surface on the target side and provided with a large number of holes for electron beam passage is used.
本発明の第２の実施例においては第２図に示すように上
記プラズマ発生室５１）中にリジタノコイル５１５を配
置し、このリジタノコイル５１５に例えば２４００ＭＩ
Ｉｚのマイクロ波を流すようにすると共に、上記第１の
実施例における高周波コイル５１０の代わりに電子サイ
クロトロン共鳴条件を満足する磁場発生手段５１４を設
け、上記プラズマ発生室５１）に磁場を作用せしめる。In the second embodiment of the present invention, as shown in FIG.
In addition to flowing microwaves of Iz, magnetic field generating means 514 that satisfies electron cyclotron resonance conditions is provided in place of the high frequency coil 510 in the first embodiment, and a magnetic field is applied to the plasma generation chamber 51).
この第２の実施例によれば上記第１の実施例と同様の効
果を得ることが出来る。According to this second embodiment, the same effects as those of the first embodiment can be obtained.
（発明の効果）
上記ように本発明のイオンビーム照射装置によれば汚染
が無く長寿命で且つ効率の良いイオンビームを容易に得
ることが出来る。(Effects of the Invention) As described above, according to the ion beam irradiation apparatus of the present invention, an ion beam that is free from contamination, has a long life, and is highly efficient can be easily obtained.
第１図は本発明のイオンビーム照射装置の説明図、第２
図は本発明の他の実施例におけるイオンビーム照射’Ａ
ＴＬの説明図、第３図は従来のイオンビーム照射装置の
説明図である。
■・ ・ ・カソード、２・・・アノード、３．５・・
電源、４・・・グリソド、６・・・ターゲノト、７・
・ ・容器、８・ ・ ・ターゲット側源、９、ｌＯ・
・・スリット、１）．１２・・・ガス導入口、１３・・
・電子ビーム、１４・・・イオンビーム、１５，１６．
１７，１８．１９・・・空間、２０・・・・排気口、５
８・・・容器、５３・・・第１電極、５４・・・第２電
極、５５・・・ターゲット側極、５６・・・電圧源、５
９・・・ワーキングガス、５１Ｏ・・・高周波コイル、
５１）・・・プラズマ発生室、５１２・・・第３電極、
５１３，５１４・・・磁場発生手段、５１５・・・リジ
タノコイル。Figure 1 is an explanatory diagram of the ion beam irradiation device of the present invention, Figure 2
The figure shows ion beam irradiation 'A' in another embodiment of the present invention.
An explanatory diagram of TL, FIG. 3 is an explanatory diagram of a conventional ion beam irradiation device. ■・・・Cathode, 2...Anode, 3.5...
Power supply, 4...Grisodo, 6...Targetnote, 7.
・ ・Container, 8 ・ ・Target side source, 9, lO・
...Slit, 1). 12...Gas inlet, 13...
・Electron beam, 14... Ion beam, 15, 16.
17,18.19...Space, 20...Exhaust port, 5
8... Container, 53... First electrode, 54... Second electrode, 55... Target side pole, 56... Voltage source, 5
9... Working gas, 51O... High frequency coil,
51)... plasma generation chamber, 512... third electrode,
513, 514...Magnetic field generating means, 515...Rigidano coil.
Claims (8)
ラズマを発生する機構と、このプラズマ発生機構によっ
てプラズマが発生されるプラズマ発生室と、ターゲット
電極と、前記プラズマ発生室と前記ターゲット電極間に
互いに離間して順次介挿された第３，第１及び第２電極
と、この第１及び第２電極によって挟まれる空間に設け
た電子ビーム捕捉機構と、上記第３電極と第１電極間及
び第２電極とターゲット電極間に夫々電圧を印加する電
源とより成ることを特徴とするイオンビーム照射装置。(1) A mechanism that generates plasma at a pressure of 10^-^1 to 10^-^5 Torr, a plasma generation chamber in which plasma is generated by this plasma generation mechanism, a target electrode, the plasma generation chamber and the target third, first and second electrodes inserted in sequence at a distance from each other between the electrodes; an electron beam capture mechanism provided in a space sandwiched by the first and second electrodes; and the third electrode and the first electrode. An ion beam irradiation device comprising a power source that applies voltages between the electrodes and between the second electrode and the target electrode.
した高周波コイルである請求項１記載のイオンビーム照
射装置。(2) The ion beam irradiation apparatus according to claim 1, wherein the plasma generation mechanism is a high frequency coil through which a high frequency current flows.
置したマイクロ波を流すようにした電極と、上記プラズ
マ発生室を磁場を発生せしめるための磁場発生機構であ
る請求項１記載のイオンビーム照射装置。(3) The ion beam irradiation apparatus according to claim 1, wherein the plasma generation mechanism is an electrode arranged in the plasma generation chamber and configured to flow microwaves, and a magnetic field generation mechanism for causing the plasma generation chamber to generate a magnetic field. .
を被着し、電子ビーム通過用の孔を多数設けたものであ
る請求項１，２又は３記載のイオンビーム照射装置。(4) The ion beam irradiation device according to claim 1, 2 or 3, wherein the first and third electrodes are a ceramic plate with copper plates adhered to both sides and provided with a large number of holes for electron beam passage.
側の一面に銅板を被着し、電子ビーム通過用の孔を多数
設けたものである請求項１，２又は３記載のイオンビー
ム照射装置。(5) Ion beam irradiation according to claim 1, 2 or 3, wherein the first and third electrodes are a ceramic plate covered with a copper plate on one surface on the target side and provided with a large number of holes for electron beam passage. Device.
し、電子ビーム通過用の孔を多数設けたものである請求
項１，２又は３記載のイオンビーム照射装置。(6) The ion beam irradiation device according to claim 1, 2 or 3, wherein the second electrode is a ceramic plate with copper plates adhered to both sides and provided with a large number of holes for electron beam passage.
面に銅板を被着し、電子ビーム通過用の孔を多数設けた
ものである請求項１，２又は３記載のイオンビーム照射
装置。(7) The ion beam irradiation apparatus according to claim 1, 2 or 3, wherein the second electrode is a ceramic plate with a copper plate attached to one surface on the target side and provided with a large number of holes for electron beam passage.
手段である請求項１，２，３，４，５，６又は７記載の
イオンビーム照射装置。(8) The ion beam irradiation apparatus according to claim 1, 2, 3, 4, 5, 6, or 7, wherein the electron beam capture mechanism is a multi-cusp magnetic field generating means.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1173055A JPH0340342A (en) | 1989-07-06 | 1989-07-06 | Ion beam irradiation device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1173055A JPH0340342A (en) | 1989-07-06 | 1989-07-06 | Ion beam irradiation device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0340342A true JPH0340342A (en) | 1991-02-21 |
| JPH057814B2 JPH057814B2 (en) | 1993-01-29 |
Family
ID=15953382
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1173055A Granted JPH0340342A (en) | 1989-07-06 | 1989-07-06 | Ion beam irradiation device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0340342A (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61290629A (en) * | 1985-06-18 | 1986-12-20 | Rikagaku Kenkyusho | Electron beam excitation ion source |
| JPS62193660U (en) * | 1986-05-30 | 1987-12-09 |
-
1989
- 1989-07-06 JP JP1173055A patent/JPH0340342A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61290629A (en) * | 1985-06-18 | 1986-12-20 | Rikagaku Kenkyusho | Electron beam excitation ion source |
| JPS62193660U (en) * | 1986-05-30 | 1987-12-09 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH057814B2 (en) | 1993-01-29 |
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