JPH0574932B2 - - Google Patents
Info
- Publication number
- JPH0574932B2 JPH0574932B2 JP60046572A JP4657285A JPH0574932B2 JP H0574932 B2 JPH0574932 B2 JP H0574932B2 JP 60046572 A JP60046572 A JP 60046572A JP 4657285 A JP4657285 A JP 4657285A JP H0574932 B2 JPH0574932 B2 JP H0574932B2
- Authority
- JP
- Japan
- Prior art keywords
- dry etching
- etching apparatus
- workpiece
- plasma
- main body
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000001312 dry etching Methods 0.000 claims description 20
- 238000005530 etching Methods 0.000 claims description 16
- 238000001514 detection method Methods 0.000 claims description 6
- 238000005259 measurement Methods 0.000 claims description 2
- 239000007795 chemical reaction product Substances 0.000 description 11
- 239000007789 gas Substances 0.000 description 11
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000004020 luminiscence type Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000036962 time dependent Effects 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Description
【発明の詳細な説明】
〔発明の利用分野〕
本発明は、低温ガスプラズマにより半導体装置
製造用ウエハ等をエツチング処理するためのドラ
イエツチング装置に係わり、特にウエハ等の表面
上の局所エリア各々でのプラズマ状態が個々に経
時的モニタされるべくなしたドライエツチング装
置に関するものである。[Detailed Description of the Invention] [Field of Application of the Invention] The present invention relates to a dry etching apparatus for etching wafers, etc. for semiconductor device manufacturing using low-temperature gas plasma. The present invention relates to a dry etching apparatus in which the state of plasma of each etching device is individually monitored over time.
これまで、ドライエツチング装置に対するプラ
ズマモニタ装置としては、例えば特開昭55−
59726公報に記載のものが知らているが、これに
よる場合、プラズマモニタ装置はプラズマ発光を
集光する場所、即ち、観測窓のある場所にしか設
置し得なく、その観測窓にその位置が固定された
状態で特定波長光が測定されるべく構成されたも
のとなつている。
Until now, as a plasma monitor device for dry etching equipment, for example,
59726 is known, but in this case, the plasma monitor device can only be installed in a place where plasma emission is focused, that is, in a place with an observation window, and its position is fixed to the observation window. The device is configured such that light of a specific wavelength is measured in a state in which the
ところで、エツチングを行う上での制御要素と
しては、各種のもの（RFパワー、ガスの種類と
その混合比・流量、内部温度等）が挙げられる
が、ドライエツチング装置では、これら制御要素
が最適に制御されることで、装置内部でのエツチ
ングレートの均一化を図ることが最重要課題とさ
れているのが実情である。しかしながら、これま
でにあつては、プラズマ全体での平均的な発光強
度の変化が専ら測定されているだけであり、ロー
カルな（局所的な）プラズマ状態の変動は何等積
極的にはモニタされなていなく、したがつて、上
記制御要素が最適に制御され得ないものとなつて
いる。 By the way, there are various control elements when performing etching (RF power, gas type and its mixing ratio/flow rate, internal temperature, etc.), but in dry etching equipment, these control elements are not optimally controlled. The reality is that the most important issue is to make the etching rate uniform within the apparatus by controlling the etching rate. However, up until now, only changes in the average emission intensity in the entire plasma have been measured, and local fluctuations in the plasma state have not been actively monitored. Therefore, the control elements cannot be optimally controlled.
本発明の目的は、被加工物表面上の相異なる局
所エリア表面各々でのプラズマ状態が、個々に経
時的にモニタ可としてなるドライエツチング装置
を供するにある。
SUMMARY OF THE INVENTION An object of the present invention is to provide a dry etching apparatus in which the plasma state at each of different local areas on the surface of a workpiece can be individually monitored over time.
その目的を達成すべく本発明は、ドライエツチ
ング装置本体の外周囲に一定間隔を以て配設され
た、局所エリア表面対応の光検出手段によつて、
被加工物表面上の相異なる局所エリア表面各々か
らの特定波長の反射光を検出した上、これら光検
出手段各々からの光検出信号が個々に測定記録さ
れるべく構成したものである。
In order to achieve the object, the present invention uses light detection means corresponding to the surface of a local area, which is arranged at regular intervals around the outer circumference of the dry etching apparatus main body.
The apparatus is configured to detect reflected light of a specific wavelength from each of different local area surfaces on the surface of the workpiece, and to individually measure and record the light detection signals from each of these light detection means.
以下、本発明を具体的に説明する前に、それが
なされた背景について説明すれば以下のようであ
る。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Before specifically explaining the present invention, the background behind the invention will be described below.
即ち、エツチング処理の際に発生する反応生成
物およびガス成分の挙動を把握することは、エツ
チングの均一化を図る上で、今後も加工技術の進
歩に伴いより一層必要となつていることは明らか
である。そこで、反応生成物等の発生状態をモニ
タしようとする場合に、これまでのように、プラ
ズマの中心付近（プラズマ発生のための上部、下
部電極間の中央付近）をモニタしただけでは、全
体として平均化されたプラズマ状態しか知れない
というものである。 In other words, it is clear that understanding the behavior of reaction products and gas components generated during etching will become even more necessary as processing technology advances in order to achieve uniform etching. It is. Therefore, when trying to monitor the generation state of reaction products, etc., it is not possible to monitor the entire plasma by just monitoring the vicinity of the center of the plasma (near the center between the upper and lower electrodes for plasma generation) as has been done up until now. Only the averaged plasma state is known.
しかしながら、様々な研究の実験結果からは、
以下の事実が判明している。即ち、光検出器が被
加工物表面上の局所エリア表面に対向した状態で
配設される場合には、その局所エリア表面からの
特定波長の反射光のみを検出し得、その局所エリ
アでの反応生成物等の挙動が経時的に測定され得
るというものである。しかも、その際に、光検出
器が複数配設される場合は、相異なる局所エリア
表面各々での反応生成物等の挙動が同時に測定さ
れ得、その結果として、プラズマ内に含まれてい
る、エツチングに有効な化学生成物の分布とその
経時的変化が容易に知れるというものである。 However, from the experimental results of various studies,
The following facts are known. In other words, when the photodetector is placed facing the surface of a local area on the surface of the workpiece, it is possible to detect only the reflected light of a specific wavelength from the surface of that local area. The behavior of reaction products and the like can be measured over time. Moreover, when a plurality of photodetectors are provided at that time, the behavior of reaction products, etc. on the surfaces of different local areas can be measured simultaneously, and as a result, the behavior of reaction products, etc. contained in the plasma can be measured simultaneously. The distribution of chemical products effective in etching and their changes over time can be easily determined.
さて、本発明によるドライエツチング装置の一
例での構成について説明すれば、第１図はその概
略平面を、また、第２図はその第１図におけるＸ
−Ｘ線矢視図を示したものである。図示のよう
に、反応ガスの入口１０とその出口１１が設けら
れ、また、上部電極２に対向する下部電極上には
被加工物８が載置されている平行平板型のドライ
エツチング装置本体１のその外周囲には、一定間
隔で複数（本例では４個）の光検出器３ａ〜３ｄ
が、被加工物８の表面を斜方向から臨むべく配設
されたものとなつている。これら光検出器３ａ〜
３ｄは同一構成とされ、特定波長通過用の光学フ
イルタ（干渉フイルタ）６と、光学フイルタ６か
らの通過光を光電変換する光電変換素子（ホトダ
イオード）７と、光電変換素子７からの光電変換
信号を増幅する増幅器とから構成されたものとな
つている。より詳細に説明すれば、光検出器３ａ
〜３ｄ各々はその採光範囲が被加工物８の表面上
の同一場所からの反射光が同時測定されないよ
う、その先端にはピンホール９が設けられたもの
となつている。しかして、ドライエツチング装置
本体１内の励起ガスプラズマから放射される特定
波長光１２は、被加工物８の表面上の相異なる局
所エリア表面各々からの反射光として光検出器３
ａ〜３ｄ各々で検出された上、同軸ケーブル４ａ
〜４ｄを介し多ペン式記録計５でチヤート紙上に
測定記録されることによつて、被加工物８の表面
上の相異なる局所エリア表面各々での反応生成物
等の挙動が経時変化として同時に測定され得るも
のである。 Now, to explain the structure of an example of a dry etching apparatus according to the present invention, FIG. 1 shows a schematic plane thereof, and FIG.
- It shows an X-ray arrow view. As shown in the figure, a parallel plate type dry etching apparatus main body 1 is provided with a reaction gas inlet 10 and its outlet 11, and a workpiece 8 is placed on a lower electrode opposite to an upper electrode 2. A plurality of (four in this example) photodetectors 3a to 3d are arranged at regular intervals around the outer periphery of the
is arranged so as to face the surface of the workpiece 8 from an oblique direction. These photodetectors 3a~
3d has the same configuration, and includes an optical filter (interference filter) 6 for passing a specific wavelength, a photoelectric conversion element (photodiode) 7 that photoelectrically converts the light passing through the optical filter 6, and a photoelectric conversion signal from the photoelectric conversion element 7. It consists of an amplifier that amplifies the To explain in more detail, the photodetector 3a
- 3d each has a pinhole 9 at its tip so that reflected light from the same location on the surface of the workpiece 8 is not measured at the same time. Therefore, the specific wavelength light 12 emitted from the excited gas plasma in the dry etching apparatus main body 1 is detected by the photodetector 3 as reflected light from each of the surfaces of different local areas on the surface of the workpiece 8.
Coaxial cable 4a was detected in each of a to 3d.
By measuring and recording on the chart paper with the multi-pen recorder 5 through 4d, the behavior of reaction products, etc. in different local areas on the surface of the workpiece 8 can be simultaneously observed as changes over time. something that can be measured.
ここで、その測定記録についてより具体的に説
明すれば、第３図、第４図は被加工物８の表面に
被着されているS3N4膜のドライエツチング中で
の反応生成物N2についての発光強度（波長337n
ｍ）についての経時変化を、他のエツチング条件
（高周波電力（13.56MHz）：150W、エツチングガ
ス：CF4＋４％O2、ガス流量：40SCCM）は同一
として、ガス圧力がそれぞれ0.4Torr、0.6Torr
に設定された場合でのものとして示したものであ
る。これら図中、エツチング終了時点は時点Ａ，
Ｃとして、また、放電開始時点は時点Ｂ，Ｄとし
て示されており、また、曲線Ｅ〜Ｇ，Ｉ〜Ｋは、
既述の態様で等間隔に配設されている３つの光検
出器各々からの、反応生成物N2についての発光
強度の経時変化を、更に曲線Ｈ，Ｌは、光検出器
をプラズマ中心部に向けて配置した場合での反応
生成物N2についての発光強度の経時変化を比較
用として示したものである。 Here, to explain the measurement records in more detail, FIGS. 3 and 4 show the reaction product N during dry etching of the S 3 N 4 film adhered to the surface of the workpiece 8. Emission intensity about 2 (wavelength 337n
m) with the other etching conditions (high frequency power (13.56MHz): 150W, etching gas: CF 4 + 4% O 2 , gas flow rate: 40SCCM) and gas pressures of 0.4 Torr and 0.6 Torr, respectively.
This is what is shown when it is set to . In these figures, the etching ends at time A,
The discharge start point is shown as time B and D, and the curves E to G and I to K are
The curves H and L show the time-dependent changes in the emission intensity of the reaction product N 2 from each of the three photodetectors arranged at equal intervals in the manner described above, and curves H and L show the photodetectors located at the center of the plasma. For comparison, the change over time in the luminescence intensity of the reaction product N 2 is shown when the device is placed facing the direction of the reaction product N 2 .
第３図、第４図からも明らかなように、曲線
Ｈ，Ｌとは異なり、曲線Ｅ〜Ｇ，Ｉ〜Ｋ各々で
は、放電開始からエツチング終了までに、発光強
度上、２つの極大点が出現しており、この現象は
ガス圧力が高くなる程に顕著となることから、ガ
ス圧力の変動を曲線Ｅ〜Ｇ，Ｉ〜Ｋよりモニタし
得るというものである。また、曲線Ｅ〜Ｇ，Ｉ〜
Ｋ間でその経時変化を比較すれば、ほぼ同様な経
時変化を示したものとなつている。これより、プ
ラズマ内では局所的な相対変動が生じていないこ
とが容易に知れるものである。 As is clear from FIGS. 3 and 4, unlike curves H and L, in each of curves E to G and I to K, there are two maximum points in terms of luminescence intensity from the start of discharge to the end of etching. Since this phenomenon becomes more pronounced as the gas pressure becomes higher, fluctuations in gas pressure can be monitored from curves E to G and I to K. Also, the curve E~G, I~
Comparing the changes over time between K, it is found that the changes over time are almost the same. From this, it can be easily seen that no local relative fluctuations occur within the plasma.
一方、曲線Ｈ，Ｌを観察すれば、その波形は、
これまでにも得られた一般的なエツチングモニタ
波形に同一であつて、ガス圧力の変化に対し大き
な変化は認められないものとなつている。したが
つて、光検出器をプラズマ中心部方向に向ける方
式では、ガス圧力の変化をモニタすることは困難
であり、エツチング終了時点が近いことが単に知
れるだけのものとなつている。 On the other hand, if we observe curves H and L, their waveforms are
The waveform is the same as the general etching monitor waveform obtained so far, and no large changes are observed with respect to changes in gas pressure. Therefore, with the method in which the photodetector is directed toward the plasma center, it is difficult to monitor changes in gas pressure, and it is simply a matter of knowing that the end of etching is near.
ガス圧力の変化以外に、曲線Ｅ〜Ｇ，Ｉ〜Ｋか
らは、同様な現象として、高周波電力の変化も同
時にモニタし得ることから、高感度にプラズマプ
ロセス条件の変動がモニタされ得るものである。 In addition to changes in gas pressure, changes in high-frequency power can also be monitored as a similar phenomenon from curves E to G and I to K, so changes in plasma process conditions can be monitored with high sensitivity. .
以上、説明したように、本発明によれば、被加
工物表面上の局所エリア各々でのプラズマ状態が
高感度にモニタされ、そのモニタ結果にもとづき
プラズマは最適に制御され得るものとなつてい
る。したがつて、ドライエツチング装置での均一
なエツチング条件を検討する場合に、プラズマ状
態との関係を把握する上で、貴重なデータが得ら
れるものとなつている。
As explained above, according to the present invention, the plasma state in each local area on the surface of the workpiece can be monitored with high sensitivity, and the plasma can be optimally controlled based on the monitoring results. . Therefore, when examining uniform etching conditions in a dry etching apparatus, valuable data can be obtained in understanding the relationship with the plasma state.
第１図は、本発明によるドライエツチング装置
の一例での構成を概略平面として示す図、第２図
は、その第１図におけるＸ−Ｘ線矢視図を示す
図、第３図、第４図は、本発明による効果を効果
を考察するための、ドライエツチング中での反応
生成物についての発光強度変化を示す図である。
１……ドライエツチング装置本体、３ａ〜３ｄ
……光検出器、５……多ペン式記録計、８……被
加工物。
FIG. 1 is a schematic plan view showing the configuration of an example of a dry etching apparatus according to the present invention, FIG. 2 is a view taken along the line X-X in FIG. 1, FIG. The figure is a diagram showing changes in luminescence intensity of reaction products during dry etching, in order to examine the effects of the present invention. 1... Dry etching device main body, 3a to 3d
...Photodetector, 5...Multi-pen recorder, 8...Workpiece.
Claims (1)
エツチング処理が行われるに際し、該被加工物表
面上の局所エリア表面各々でのプラズマ状態が
個々にモニタされるべくなした平行平板型ドライ
エツチング装置であつて、内部に平行平板型電極
を収容してなるドライエツチング装置本体と、該
ドライエツチング装置本体内部に収容された状態
にある被加工物の表面上の相異なる局所エリア表
面各々からの特定波長の反射光の経時的な変化を
検出すべく、該ドライエツチング装置本体の外周
囲に一定間隔を以て配設された局所エリア表面対
応の光検出手段と、該光検出手段各々からの光検
出信号を経時的に測定記録する測定記録手段と、
からなるドライエツチング装置。1. A parallel plate type dry etching apparatus designed to individually monitor the plasma state in each local area on the surface of the workpiece when etching is performed on the surface of the workpiece using low-temperature gas plasma. A dry etching apparatus main body having parallel plate type electrodes housed therein, and a dry etching apparatus which emits specific wavelengths from different local areas on the surface of a workpiece housed inside the dry etching apparatus main body. In order to detect changes in reflected light over time, light detection means corresponding to local area surfaces are arranged at regular intervals around the outer periphery of the dry etching apparatus main body, and light detection signals from each of the light detection means are detected over time. measurement recording means for measuring and recording;
A dry etching device consisting of:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4657285A JPS61206226A (en) | 1985-03-11 | 1985-03-11 | Plasma monitor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4657285A JPS61206226A (en) | 1985-03-11 | 1985-03-11 | Plasma monitor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61206226A JPS61206226A (en) | 1986-09-12 |
| JPH0574932B2 true JPH0574932B2 (en) | 1993-10-19 |
Family
ID=12751026
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4657285A Granted JPS61206226A (en) | 1985-03-11 | 1985-03-11 | Plasma monitor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61206226A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04196529A (en) * | 1990-11-28 | 1992-07-16 | Toshiba Corp | Plasma processing equipment |
| US5985092A (en) * | 1996-12-17 | 1999-11-16 | United Microelectronics Corp. | Endpoint detection system |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56130473A (en) * | 1980-03-14 | 1981-10-13 | Hitachi Ltd | Dry etching apparatus |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60149133U (en) * | 1984-03-13 | 1985-10-03 | 日本真空技術株式会社 | Etching monitor |
-
1985
- 1985-03-11 JP JP4657285A patent/JPS61206226A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56130473A (en) * | 1980-03-14 | 1981-10-13 | Hitachi Ltd | Dry etching apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61206226A (en) | 1986-09-12 |
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