JPH0574882A - Characteristic testing device for semiconductor elements - Google Patents

Abstract

PURPOSE:To embody a characteristic testing device capable of performing high reliability characteristic tests with high efficiency with regards to semiconductor devices provided with very small electrodes with narrow array spacing by using a probe needle which is large in its tip size and excellent in rigidity. CONSTITUTION:Probe needle rows 5a and 5b equipped with probe needles 6 which are arrayed at a span two times larger than the layout span of electrodes are depressed on electrode rows 2a and 2b where very small electrodes 3 are arranged so that characteristic testing may be carried out. It is, therefore, possible to test even small electrode rows with narrow layout spans by using a probe needle with a large-sized tip.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a characteristic testing apparatus for testing electrical characteristics of a plurality of semiconductor elements (hereinafter referred to as chips) manufactured by a semiconductor wafer process. In particular, the present invention relates to a characteristic test device for conducting a test by bringing a probe needle row into conductive contact with a chip equipped with microelectrodes.

[0002]

2. Description of the Related Art An electrical characteristic test performed by bringing a probe needle array into contact with an electrode array of a semiconductor chip is generally carried out by an apparatus as shown in FIGS. The chip 1 which is the object of the characteristic test is manufactured by a semiconductor wafer process in a semiconductor integrated circuit. On this chip 1, electrodes 3 connected to the main part of the semiconductor circuit are linearly arranged to form an electrode array 2. The probe needle row 5 arranged on such an electrode row 2 at the same pitch as the electrodes are arranged.
Is set by applying a predetermined pressure from above each electrode 3, and a characteristic test is performed. Each probe needle 6 set on each electrode 3 by applying a predetermined pressure is in conductive contact with each electrode 3, and a semiconductor circuit is connected to an external power supply circuit or a measurement circuit via the probe needle 6. And test the characteristics of the circuit. Therefore, each electrode 3 and each probe needle 6 can be easily
Further, reliable conductive contact is important for improving the reliability of the characteristic test and the working efficiency of the test.

In the conventional chip, the size of the electrodes 3 is 50 × 50 μm to 70 × 70 μm, and the electrodes 3 are arranged side by side at a pitch of 70 to 100 μm. The electrode array 2 is tested using a probe needle having a tip diameter of 25 to 30 μm. However, due to recent advances in semiconductor technology,
Since the degree of integration of semiconductor integrated circuits is increasing, chips with electrode pitches of 60 μm or less and electrode areas of 40 × 40 μm or less are manufactured.

[0004]

In order to test the characteristics of the chip having the above-mentioned micro electrodes, the characteristics of the chips are narrowed by using a probe needle row having a narrow tip diameter of the probe needles. You need to do a test. However, if the pitch of the probe needles is narrow, it becomes difficult to maintain good insulation between the probe needles. Therefore, as the probe needle for the characteristic test of the microelectrode, a needle having a tip diameter smaller than that of the conventional probe needle is generally used in order to maintain the distance between the probe needles. Since the probe needle having such a small diameter has a reduced mechanical rigidity, it is easily damaged during the test such as deformation of the tip portion and has a short life. For this reason, the probe needles are frequently replaced during the test, and the work efficiency of the test is reduced. Further, also in replacement work or manufacture of probe needles, since the rigidity of the needles is lowered, damage is likely to occur and handling is difficult. Further, since the rigidity of the probe needle is lowered, the pressure for pressing the probe needle against the electrode is unavoidably reduced, which makes it difficult to obtain a good conductive contact state.

In view of the above problems, an object of the present invention is to use a needle whose rigidity is the same as that of a conventional probe needle to maintain work efficiency and good conductive contact with an electrode. It is to realize a possible semiconductor device characteristic test apparatus.

[0006]

In order to solve the above-mentioned problems, in the semiconductor device characteristic test apparatus of the present invention,
The probe needles are arranged so as to have a row of probe needles arranged at a plurality of intervals of the electrode of the semiconductor element. Furthermore, it is desirable that the device has a plurality of probe needle groups provided with such a probe needle row, in such an apparatus, the probe needle row attached to each probe needle group,
It is desirable to press the electrodes of different semiconductor elements.

Further, in the above-mentioned characteristic test device, the first
And the second probe needle group, the probe needle row of the first probe needle group is formed so as to face the odd-numbered electrode of the semiconductor element, and the second probe needle group is formed. It is possible to use the probe needle array formed so as to face the even-numbered electrodes.

[0008]

In such an apparatus, the probe needles are arranged so as to be a plurality of times as large as the intervals of the fine electrodes arranged on the semiconductor element, and the probe needles are arranged at appropriate intervals without being influenced by the arrangement intervals of the fine electrodes. The needles are arranged. Therefore, it is possible to use a probe needle with a large diameter while keeping the distance between the needles at a sufficient distance for insulation. As described above, in the characteristic test device of the present invention, since the probe needle having a large diameter and excellent mechanical rigidity is used, it is possible to press the probe needle to the microelectrode with sufficient pressure, and to obtain good conductivity. The contact state is secured. Moreover, since a probe needle having excellent rigidity is used, damage to the needle is reduced. Therefore, the frequency of needle replacement is reduced, and the work efficiency of the test is also improved.

Further, in a characteristic testing apparatus having a plurality of probe needle groups so that a plurality of semiconductor elements can be tested at the same time, the probe needle row as described above is formed in each probe needle group, Each probe needle group is connected to a different electrode. In such a test apparatus, it becomes possible to connect the probe needle row with a pitch of a plurality of times to all the electrodes of the semiconductor in a short time, and the test time is shortened.

[0010]

Embodiments of the present invention will be described below with reference to the drawings.

FIG. 1 illustrates a connection state between a probe needle row and a semiconductor element (chip) of a test apparatus according to an embodiment of the present invention. A connection state between the two probe needle rows 5a and 5b and the tip electrode rows 2a and 2b will be described with reference to this figure. Each of the chips 1a and 1b of this example has N
Sixteen electrodes 3 from o1 to No. 16 are arranged side by side with a pitch P maintained, forming electrode rows 2a and 2b. The probe needle rows 5a and 5b are pressed against the electrode rows 2a and 2b from above. Probe needle row 5
In each of a and 5b, each of the eight probe needles 6 has an electrode array 2
They are lined up facing a and b. The interval at which these probe needles are arranged is twice the pitch P of the electrodes 3. Then, the probe needle row 5 pressed against the electrode row 2a
In a, the probe needles 6 are arranged so as to be connected to the even-numbered electrodes 3. Further, in the probe needle row 5b pressed against the electrode 2b, each probe needle 6 is arranged so as to be connected to the odd-numbered electrode 3.

In the test apparatus of this example, first, the probe needle row 5a is connected to the chip 1a. Each probe needle of the probe needle row 5a is pressed against each of the even-numbered electrodes (No2, 4, 6, ..., 16) of the electrode row 2a, and the characteristic test on the even-numbered electrodes is performed. When the test is completed, the chip 1a is relatively moved by one chip in the direction of the chip 1b (direction of arrow I in FIG. 1). And
The probe needle row 5b is connected. This probe needle row 5b
The probe needles of are the odd-numbered electrodes (N
o1, 3, 5, ..., 15), the characteristic test is performed on the odd-numbered electrodes. In this way, all the electrodes of the chip can be tested by the probe needle row in which the probe needles are arranged at an interval of twice the electrode pitch. Since the pitch of the probe needles is twice as large as the pitch of the conventional needles, even for the electrode rows of the minute electrodes arranged at a pitch of 30 μm to 40 μm, the pitch of 25 μm is the same as the test for the conventional electrodes. Testing can be done using a probe needle with a tip diameter of 30 μm. Therefore, since a rigid probe needle can be used for a semiconductor element having microelectrodes, defects such as deformation of the probe needle are reduced, and the number of steps required to replace the probe needle row can be reduced. Furthermore, since the probe needle having rigidity can be pressed against the electrode with sufficient pressure, good conductive contact can be maintained and the reliability of the test can be improved.

A method of testing a 128-bit driver IC by the characteristic testing apparatus of this embodiment will be described with reference to FIGS. A semiconductor integrated circuit such as the driver IC 10 is formed as a large number of mesh-shaped chips on the surface of a disk-shaped silicon wafer 9 by a semiconductor wafer process as shown in FIG. This one I
Microelectrodes 3 are linearly arranged in C10 as shown in FIG. In this way, the IC 10 is applied to the test apparatus of this example in a state of being formed on the wafer 9. Then, the probe needle rows 5a and 5b are pressed against the wafer 9 as a work, and the test is performed.

As shown in FIG. 4, the driver IC 10 has a latch circuit section 20 and a shift register section 21, and electrodes which are 128 output terminals corresponding to each bit circuit composed of the latch circuit and the shift register circuit. P1 to P128 are formed. Also, the input terminal EN
One of each of B, STB, CLK and SIN, a power supply terminal V _DD , a ground terminal V _SS , an output terminal P _G, etc. is installed.
The withstand voltage test of this IC10 is performed by using the output terminals P1 to P128.
And the power supply terminals V _DD are connected to the power supplies 30 and 31, and all the other terminals are grounded.

FIG. 5 shows a state in which the probe needle groups 7a and 7b of the test apparatus of this example are connected to the driver ICs 10a and 10b during the above withstanding voltage test.
About 40 × 40 for driver ICs 10a and 10b
The output terminals P1 to P128 formed of microelectrodes of μm are linearly installed at a pitch of 40 μm. In addition, other terminals ENB, STB, CLK, SIN, V _DD , V _SS
And P _G is twice the pitch of the microelectrode, that is, 80 μ
It is formed by m.

The probe needle group 7a of the present apparatus includes a probe needle row 5a pressed by the even-numbered output terminals P2, P4, ... P128 and the other terminals ENB, STB, CLK, S.
The probe needle row 8 is pressed against IN, V _DD , V _SS and P _G.

The probe needle group 7b is composed of a probe needle row 5b pressed by the odd-numbered output terminals P1, P3, ... P127 and a probe needle row 8 pressed by the other terminals. In this way, the probe needle group 7
a and 7b, microelectrode output terminals P1 to P12
Since the probe needles are arranged so that the pitch of the probe needles is twice as large as that of the probe needles 8, the probe needles of the probe needle groups 7a and 7b have a pitch twice the pitch at which the microelectrodes are arranged,
That is, they are arranged at 80 μm.

The above probe needle rows 5a and 5b are ammeters 3.
3 is connected to a DC power supply 31 whose one end is grounded. The probe needles pressed by the probe needle row 8 to the power supply terminal V _DD are connected to the DC power supply 30 whose one end is grounded. Then, the ENB and S are connected to the other terminals of the probe needle row 8.
The probe needles pressed by TB, CLK, SIN, V _SS and P _G are collectively grounded. In this way, the withstand voltage test of the driver ICs 10a and 10b is performed, and then the wafer 9 is moved from the IC 10a to the IC 10b (the direction of arrow V in FIG. 5). Then, as in the above, the probe needle group 7b is pressed by the IC 10a, and the IC 1a
The withstand voltage test of the odd-numbered output terminals P1, P3, ... P127 of 0a is performed.

As described above, in the probe needle group of the characteristic testing apparatus of this example, the probe needles are arranged at an interval which is twice the interval of the micro electrodes, and the highly integrated device having the micro electrodes having a narrow array interval is provided. It is possible to perform a test on a semiconductor element having a large degree by using a probe needle having a large tip diameter and excellent rigidity. Therefore, it is possible to press the probe needle against the microelectrode with a sufficient pressure, and it is possible to carry out a test with few failures while keeping good conductive contact. Furthermore, since the probe needle has a high rigidity, damage such as needle deformation is reduced. As a result, the frequency of probe needle replacement can be reduced, and the operating rate of the test apparatus can be improved. In addition, when the distance between the probe needles is about 30 to 40 μm, there is a problem that conductive dust adheres between the probe needles and current leakage occurs between the probe needles. This problem can be solved by increasing the distance between the probe needles. in this way,
In the characteristic test apparatus of this example, a highly reliable characteristic test can be efficiently performed on a semiconductor element equipped with microelectrodes.

By changing the connection between the probe needle group and the external circuit, not only the withstanding voltage test but also other tests such as an operation test can be performed. Further, it goes without saying that the pitch of the probe needles is not limited to the pitch of this example. Furthermore, the pitch of the probe needles is not limited to twice the pitch of the micro electrodes, and may be three times, four times, or the like. Further, instead of the probe needle row facing the odd-numbered or even-numbered electrode, a device that controls the movement of the semiconductor chip and connects the probe needle row to different electrodes may be used.

[0021]

As described above, the semiconductor device characteristic testing apparatus of the present invention is characterized by including the probe needle rows arranged at intervals that are multiple times the intervals at which the microelectrodes are arranged, A test can be performed using a rigid probe needle array having a large tip diameter even for an electrode array of minute electrodes having a narrow array interval. Therefore, the probe needle can be pressed against the electrode with sufficient pressure, and good conductive contact can be secured. Furthermore, the probe needles are less damaged, the frequency of replacement of the probe needle row can be suppressed, and the operating rate of the characteristic testing device can be improved. Further, since it becomes easy to maintain the distance between the probe needles, it is possible to prevent leakage between the probe needles. As described above, the characteristic test apparatus of the present invention can efficiently perform a highly reliable test on a semiconductor element having a microelectrode.

[Brief description of drawings]

FIG. 1 is an explanatory diagram showing a connection state between a probe needle row and an electrode row of a characteristic testing device according to an embodiment of the present invention.

FIG. 2 is a schematic view showing a silicon wafer on which semiconductor elements to be tested by the characteristic test apparatus of FIG. 1 are formed.

FIG. 3 is an explanatory diagram showing a state of a test by enlarging a part of the wafer shown in FIG.

FIG. 4 is a circuit diagram showing a circuit for a withstand voltage test using the characteristic test apparatus according to the embodiment of the present invention.

5 is an explanatory diagram showing a connection state between a probe needle group and an electrode array during the withstand voltage test shown in FIG. 4. FIG.

FIG. 6 is an explanatory diagram showing a connection state between a probe needle row and an electrode row in a conventional test apparatus.

FIG. 7 is an explanatory view showing the connection state shown in FIG. 6 from the lateral direction.

[Explanation of symbols]

1, 1a, 1b ... Semiconductor element (chip) 2, 2a, 2b ... Electrode row 3 ... Electrode 5, 5a, 5b ... Probe needle row 6 ... Probe needle 7a, 7b ...・ Probe needle group 8 ・ ・ ・ Probe needle row 9 ・ ・ ・ Silicon wafers 10, 10a, 10b ・ ・ ・ Driver IC 20 ・ ・ ・ Latch circuit part 21 ・ ・ ・ Shift register circuit part 30 ・ ・ ・ DC power supply 31 ・.. DC power supply 33 ... Ammeter P1 to P128 ... Output terminal P ... Electrode spacing ENB, STB, CLK, SIN ... Input terminal V _DD ... Power supply terminal V _SS ... Ground terminal P _G ··· output terminal

Claims (3)

[Claims] 1. A characteristic testing device for performing an electrical characteristic test by pressing the tips of probe needles into contact with a plurality of electrodes of a semiconductor element, wherein the probe needle rows are arranged at a plurality of times the arrangement interval of the electrodes. A semiconductor device characteristic test apparatus comprising: 2. The characteristic test apparatus according to claim 1, comprising a plurality of probe needle groups each including the probe needle row, wherein the probe needle rows of each probe needle group are pressed against different electrodes of the semiconductor. A device for testing the characteristics of a semiconductor element, which is in contact with. 3. The characteristic test device according to claim 2, comprising a first and a second probe needle group.
The probe needle group includes a probe needle row arranged so as to face an even-numbered electrode of the semiconductor element,
2. The semiconductor device characteristic testing apparatus according to claim 1, wherein the probe needle group includes a probe needle row arranged so as to face the odd-numbered electrodes of the semiconductor element.