JPH0572732B2 - - Google Patents
Info
- Publication number
- JPH0572732B2 JPH0572732B2 JP58217701A JP21770183A JPH0572732B2 JP H0572732 B2 JPH0572732 B2 JP H0572732B2 JP 58217701 A JP58217701 A JP 58217701A JP 21770183 A JP21770183 A JP 21770183A JP H0572732 B2 JPH0572732 B2 JP H0572732B2
- Authority
- JP
- Japan
- Prior art keywords
- alloy
- substrate
- low
- magnetic field
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 13
- 229910045601 alloy Inorganic materials 0.000 claims description 12
- 239000000956 alloy Substances 0.000 claims description 12
- 229910003271 Ni-Fe Inorganic materials 0.000 claims description 11
- 239000010409 thin film Substances 0.000 claims description 9
- 239000000203 mixture Substances 0.000 claims description 8
- 238000001552 radio frequency sputter deposition Methods 0.000 claims description 8
- 239000002223 garnet Substances 0.000 claims description 3
- 230000015654 memory Effects 0.000 claims description 3
- 229920001721 polyimide Polymers 0.000 claims description 2
- 239000009719 polyimide resin Substances 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 claims 2
- 238000004528 spin coating Methods 0.000 claims 1
- 239000010408 film Substances 0.000 description 12
- 229910000640 Fe alloy Inorganic materials 0.000 description 6
- 238000000151 deposition Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 238000001771 vacuum deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 2
- 239000002952 polymeric resin Substances 0.000 description 2
- 229920003002 synthetic resin Polymers 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
- Thin Magnetic Films (AREA)
Description
【発明の詳細な説明】
〔発明の利用分野〕
本発明は、磁気バルブメモリなどの磁性膜とし
て用いられるNi−Fe合金膜の被着方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Application of the Invention] The present invention relates to a method for depositing a Ni--Fe alloy film used as a magnetic film in magnetic valve memories and the like.
Ni−Fe合金膜の被着方法には、一般に、真空
蒸着法、プレーナマグネトロン方式スパツタ法、
RFスパツタ法がある。一方、磁性膜としてのNi
−Fe合金膜の具備すべき性質にHc（保磁力）が
小さいことがある。このHcの小さいNi−Fe合金
膜を上記の被着方法で形成するためには、被着す
べき基板の温度を著しく高くしなければならな
い。
Generally, methods for depositing Ni-Fe alloy films include vacuum evaporation, planar magnetron sputtering,
There is an RF spatuta method. On the other hand, Ni as a magnetic film
- One of the properties that the Fe alloy film should have is that Hc (coercive force) is small. In order to form this Ni--Fe alloy film with a low Hc by the above deposition method, the temperature of the substrate to be deposited must be raised significantly.
ところが、近年、Ni−Fe合金膜を用いる素子
の構成材料に高分子樹脂が使われるようになり、
高分子樹脂の耐熱性から、基板温度に制約を受
け、Hcの小さい膜の形成が困難になつてきた。 However, in recent years, polymer resins have been used as constituent materials for elements using Ni-Fe alloy films.
Due to the heat resistance of polymer resins, it has become difficult to form films with low Hc due to constraints on substrate temperature.
そこで、本発明の目的は、基板の温度が低い被
着膜でも、Hcの小さいNi−Fe合金膜が得られる
被着方法を提供することにある。
SUMMARY OF THE INVENTION Therefore, an object of the present invention is to provide a deposition method that allows a Ni--Fe alloy film with a low Hc to be obtained even when the substrate temperature is low.
上記目的を達成するため、RFスパツタ法にお
いて、ターゲツトおよび被着すべき基板面に対し
て垂直方向の所定強さの磁場を印加しつつNi−
Fe合金膜を被着したところ、ある組成範囲にお
いて室温（〜25℃）で被着しても、Hcの小さい
膜が得られることがわかつた。
In order to achieve the above objective, in the RF sputtering method, Ni-
When Fe alloy films were deposited, it was found that films with low Hc could be obtained within a certain composition range even when deposited at room temperature (~25°C).
以下、本発明を実施例により説明する。 Hereinafter, the present invention will be explained by examples.
耐熱性ポリイミド樹脂を回転塗布、キユアした
磁気バブルメモリ用磁性ガーネツト基板上に、
RFスパツタ法によりNi−Fe合金薄膜を基板温度
25℃〜50℃の範囲で被着した。被着したNi−Fe
合金の組成はNi78wt％〜87wt％、残りFeであ
り、また、それぞれ被着中にターゲツトおよび被
着すべき基板面に対して垂直方向に０〜5.5×
10-2Oe／cm2の磁場を印加した。被着したNi−Fe
合金薄膜の組成と印加した垂直磁場に対するHc
（保磁力）の関係をまとめて第１図に示す。Ni組
成が87wt％（特性イ）のNi−Fe合金薄膜では垂
直磁場を印加してもHcを下げる効果はない。ま
た、Ni組成が78wt％（特性ロ）の場合は、垂直
磁場を印加しなくてもHcは低くなりHcを下げる
効果はない。しかし、Ni組成が80〜85wt％の範
囲のNi−Fe合金薄膜では、垂直磁場を印加すれ
ばHcを下げる効果がある。なお、特性ハは
Ni80wt％、特性ニはNi85wt％である。また、
Hcを下げるのに有効な垂直磁場の強さは
0.80Oe／cm2以上の範囲である。 A heat-resistant polyimide resin is spin-coated and cured onto a magnetic garnet substrate for magnetic bubble memory.
Ni-Fe alloy thin film is deposited at substrate temperature using RF sputtering method.
Deposition was carried out in the range of 25°C to 50°C. Deposited Ni−Fe
The composition of the alloy is 78wt% to 87wt% Ni and the balance is Fe, and during deposition, the target and the substrate surface to be deposited are 0 to 5.5x perpendicular to the surface.
A magnetic field of 10 −2 Oe/cm 2 was applied. Deposited Ni−Fe
Composition of alloy thin film and Hc for applied perpendicular magnetic field
(Coercive force) relationships are summarized in Figure 1. In a Ni-Fe alloy thin film with a Ni composition of 87 wt% (characteristic A), applying a perpendicular magnetic field has no effect on lowering Hc. Furthermore, when the Ni composition is 78 wt% (characteristic B), Hc is low even without applying a perpendicular magnetic field, and there is no effect of lowering Hc. However, in a Ni-Fe alloy thin film with a Ni composition in the range of 80 to 85 wt%, applying a perpendicular magnetic field has the effect of lowering Hc. In addition, the characteristic C is
Ni is 80wt%, and characteristic 2 is Ni85wt%. Also,
The strength of the vertical magnetic field effective for lowering Hc is
It is in the range of 0.80 Oe/cm 2 or more.
以上のように、RFスパツタ法においては基板
温度が低くてもターゲツトおよび基板面に対して
垂直方向に磁場を印加すればHcの小さいNi−Fe
合金薄膜が得られる。これを真空蒸着法と比較し
て基板加熱温度とHcの関係として第２図に示す。
特性イはRFスパツタ法、特性ロは真空蒸着法で
ある。真空蒸着法では300℃以上に基板を加熱し
ないとHcは小さくならないが、垂直磁場を印加
したRFスパツタ法では25℃でHcの小さい薄膜が
形成できる。 As described above, in the RF sputtering method, even if the substrate temperature is low, by applying a magnetic field perpendicular to the target and substrate surfaces, Ni-Fe with low Hc can be produced.
A thin alloy film is obtained. This is shown in Figure 2 as the relationship between substrate heating temperature and Hc in comparison with the vacuum evaporation method.
Characteristic A is the RF sputtering method, and characteristic B is the vacuum evaporation method. In vacuum evaporation, Hc cannot be reduced unless the substrate is heated to 300°C or higher, but in RF sputtering, which applies a vertical magnetic field, a thin film with low Hc can be formed at 25°C.
以上、本発明によれば基板温度25〜50℃の低い
温度でHcの小さいNi−Fe合金薄膜が形成できる
という優れた効果がある。
As described above, according to the present invention, there is an excellent effect that a Ni--Fe alloy thin film with low Hc can be formed at a low substrate temperature of 25 to 50°C.
第１図は、RFスパツタ法によるNi−Fe合金薄
膜形成におけるNi組成をパラメータにしたター
ゲツトおよび基板に垂直な磁場の強さとHcとの
関係を示す図、第２図は真空蒸着法と本発明によ
るRFスパツタ法によるNi−Fe合金薄膜の基板温
度とHcの関係を示す図である。
Figure 1 shows the relationship between Hc and the strength of the magnetic field perpendicular to the target and substrate using the Ni composition as a parameter in the formation of a Ni-Fe alloy thin film by the RF sputtering method. Figure 2 shows the relationship between the vacuum evaporation method and the present invention. FIG. 2 is a diagram showing the relationship between the substrate temperature and Hc of a Ni-Fe alloy thin film formed by the RF sputtering method.
Claims (1)
樹脂を回転塗布およびキユアする工程と、しかる
後にNiの組成が80wt％〜85wt％のNi−Fe合金薄
膜がRFスパツタ法で形成する工程とを具備して
成り、上記スパツタは上記基板の温度が25〜50℃
の範囲で、上記合金のターゲツト面および上記磁
性ガーネツト基板面に垂直方向に、強さが0.8×
10-2Oe／cm2以上の磁場を印加しながら行うこと
を特徴とする磁気バルブメモリの製造方法。1. A process of spin-coating and curing a heat-resistant polyimide resin on a magnetic garnet substrate, followed by a process of forming a Ni-Fe alloy thin film with a Ni composition of 80 wt% to 85 wt% by RF sputtering method. The temperature of the above substrate is 25 to 50℃.
The strength is 0.8× in the direction perpendicular to the target plane of the alloy and the plane of the magnetic garnet substrate
A method for manufacturing a magnetic valve memory, characterized in that the manufacturing method is performed while applying a magnetic field of 10 -2 Oe/cm 2 or more.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58217701A JPS60110111A (en) | 1983-11-21 | 1983-11-21 | Formation of thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58217701A JPS60110111A (en) | 1983-11-21 | 1983-11-21 | Formation of thin film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60110111A JPS60110111A (en) | 1985-06-15 |
| JPH0572732B2 true JPH0572732B2 (en) | 1993-10-12 |
Family
ID=16708369
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58217701A Granted JPS60110111A (en) | 1983-11-21 | 1983-11-21 | Formation of thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60110111A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5256398A (en) * | 1975-11-01 | 1977-05-09 | Fujitsu Ltd | Manufacturing of magnetic thin-film for bubble control |
| JPS5780713A (en) * | 1980-11-10 | 1982-05-20 | Canon Inc | Manufacture of magnetic thin film by sputtering |
| JPS58151473A (en) * | 1982-03-03 | 1983-09-08 | Teijin Ltd | Sputtering device of opposed target type |
-
1983
- 1983-11-21 JP JP58217701A patent/JPS60110111A/en active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5256398A (en) * | 1975-11-01 | 1977-05-09 | Fujitsu Ltd | Manufacturing of magnetic thin-film for bubble control |
| JPS5780713A (en) * | 1980-11-10 | 1982-05-20 | Canon Inc | Manufacture of magnetic thin film by sputtering |
| JPS58151473A (en) * | 1982-03-03 | 1983-09-08 | Teijin Ltd | Sputtering device of opposed target type |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60110111A (en) | 1985-06-15 |
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