JPH057101A - Package for electronic circuit - Google Patents

Package for electronic circuit

Info

Publication number
JPH057101A
JPH057101A JP3156846A JP15684691A JPH057101A JP H057101 A JPH057101 A JP H057101A JP 3156846 A JP3156846 A JP 3156846A JP 15684691 A JP15684691 A JP 15684691A JP H057101 A JPH057101 A JP H057101A
Authority
JP
Japan
Prior art keywords
container
package
semiconductor circuit
microwave semiconductor
waveguide mode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3156846A
Other languages
Japanese (ja)
Inventor
Hajime Toyoshima
元 豊嶋
Kiyoharu Kiyono
清春 清野
Sunao Takagi
直 高木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP3156846A priority Critical patent/JPH057101A/en
Publication of JPH057101A publication Critical patent/JPH057101A/en
Pending legal-status Critical Current

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  • Waveguides (AREA)
  • Casings For Electric Apparatus (AREA)
  • Waveguide Connection Structure (AREA)

Abstract

PURPOSE:To make the waveguide mode unremarkable in the package by providing a resistance layer to the inner face of the package. CONSTITUTION:An upper part of a package 1 for an electronic circuit in which a microwave semiconductor circuit 4 is contained is closed by an upper cover 2. A metallic coating 10, a dielectric coating 9 and a resistance layer film 8 made of a resistance layer are laminated to the inner face of the cover 2. A current flowing to the inside of the package is attenuated by the waveguide mode arisen by the film to eliminate the waveguide mode. As a result, the package for the electronic circuit in which the waveguide mode is eliminated is avoided. Furthermore, a secular characteristic deterioration is prevented through the configuration in which a rubber absorbing body using ferrite powder as a raw powder is not required to be coated on the upper cover.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】この発明は電子回路用容器に関
し、たとえば、衛星通信、地上マイクロ波通信、レーダ
ー等に用いられるマイクロ波半導体回路用容器に関する
ものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a container for electronic circuits, for example, a container for microwave semiconductor circuits used for satellite communication, terrestrial microwave communication, radar and the like.

【0002】[0002]

【従来の技術】近年、FET、トランジスタ等の半導体
素子の高性能化が進み、これらの素子を用いた増幅器、
発振器、ミキサなどのマイクロ波半導体装置が実用化さ
れている。これらの増幅器、発振器、ミキサ等では、半
導体等を保護するために蓋付容器が一般に用いられてい
る。
2. Description of the Related Art In recent years, semiconductor elements such as FETs and transistors have been improved in performance, and amplifiers using these elements,
Microwave semiconductor devices such as oscillators and mixers have been put to practical use. In these amplifiers, oscillators, mixers and the like, a container with a lid is generally used to protect semiconductors and the like.

【0003】図5は例えば、特開昭62−109403
号に示された従来のマイクロ波半導体回路用容器の構成
図である。図において、1は容器、2は上蓋、3は絶縁
性基板、4はマイクロ波半導体回路、5は入力端子、6
は出力端子、7はバイアス端子である。容器1および上
蓋2は金属でできている。容器1の底面には絶縁性基板
3が装着されており、側面には入力端子5、出力端子
6、バイアス端子7が設けられている。また、絶縁性基
板3の表面にはマイクロ波回路4が形成されている。ま
た、容器1とその上面に半田付け等で装着した上蓋2に
よってマイクロ波半導体回路4の全面を覆うことによ
り、マイクロ波半導体回路を保護している。
FIG. 5 shows, for example, JP-A-62-109403.
FIG. 6 is a configuration diagram of a conventional microwave semiconductor circuit container shown in FIG. In the figure, 1 is a container, 2 is an upper lid, 3 is an insulating substrate, 4 is a microwave semiconductor circuit, 5 is an input terminal, 6
Is an output terminal, and 7 is a bias terminal. The container 1 and the lid 2 are made of metal. An insulating substrate 3 is mounted on the bottom surface of the container 1, and an input terminal 5, an output terminal 6 and a bias terminal 7 are provided on the side surface. A microwave circuit 4 is formed on the surface of the insulating substrate 3. In addition, the microwave semiconductor circuit is protected by covering the entire surface of the microwave semiconductor circuit 4 with the container 1 and the upper lid 2 mounted on the upper surface of the container 1 by soldering or the like.

【0004】次に動作について説明する。容器1がマイ
クロ波半導体回路4に影響を与えないように、カットオ
フ周波数が使用周波数より十分高くなるように容器1の
横幅を選んでいるこの様に容器のカットオフ周波数を使
用周波数より十分高く選んでいるため、入力端子5から
入射したマイクロ波は、容器に影響されることなくマイ
クロ波半導体回路4で増幅、減衰あるいは変調等され、
出力端子6より出力される。また、所望のバイアスはバ
イアス端子7から印加する。
Next, the operation will be described. In order to prevent the container 1 from affecting the microwave semiconductor circuit 4, the lateral width of the container 1 is selected so that the cutoff frequency is sufficiently higher than the working frequency. Thus, the cutoff frequency of the container is sufficiently higher than the working frequency. Since it is selected, the microwave incident from the input terminal 5 is amplified, attenuated or modulated by the microwave semiconductor circuit 4 without being affected by the container,
It is output from the output terminal 6. A desired bias is applied from the bias terminal 7.

【0005】[0005]

【発明が解決しようとする課題】一般に容器1の横幅は
上記のように選ぶが、マイクロ波半導体回路4によって
は容器1の横幅で決まるカットオフ周波数を使用周波数
より十分高く選べないことがある。このような場合、容
器1と上蓋2で囲まれる内部に導波管モードが立ち、マ
イクロ波半導体回路の特性が劣化してしまう問題があ
る。これを避けるためにフェライトの粉を素材にしたゴ
ム状の吸収体を上蓋2に接着剤などを使って装着する方
法がとられているが、年数が経つと接着の強度が弱まっ
て吸収体が上蓋2より剥がれたり、フェライトの粉が半
導体等の上に付着して特性が劣化したり破損したりする
問題がある。
Generally, the lateral width of the container 1 is selected as described above, but depending on the microwave semiconductor circuit 4, the cutoff frequency determined by the lateral width of the container 1 may not be sufficiently higher than the operating frequency. In such a case, there is a problem that a waveguide mode is set up inside the container 1 and the upper lid 2 and the characteristics of the microwave semiconductor circuit are deteriorated. To avoid this, a rubber-like absorber made of ferrite powder is attached to the upper lid 2 by using an adhesive or the like. There is a problem that it may be peeled off from the top cover 2 or that ferrite powder may adhere to the semiconductor or the like to deteriorate the characteristics or damage it.

【0006】この発明は上記のような問題点を解決する
ためになされたもので、内部に収容されるマイクロ波半
導体回路等の電子回路に影響を与えない電子回路用容器
を得ることを目的とする。
The present invention has been made to solve the above problems, and an object thereof is to obtain an electronic circuit container which does not affect an electronic circuit such as a microwave semiconductor circuit housed inside. To do.

【0007】[0007]

【課題を解決するための手段】この発明に係わるマイク
ロ波半導体回路等の電子回路用容器は、容器内面に抵抗
被膜等の抵抗層を設けたものである。
An electronic circuit container such as a microwave semiconductor circuit according to the present invention has a resistance layer such as a resistance coating provided on the inner surface of the container.

【0008】[0008]

【作用】この発明におけるマイクロ波半導体回路等の電
子回路用容器は、導波管モードが立つことにより容器内
面を流れる電流が、容器内部に設けた抵抗被膜等の抵抗
層によって減衰し、導波管モードがなくなる。
In the container for electronic circuits such as the microwave semiconductor circuit according to the present invention, the current flowing through the inner surface of the container due to the standing of the waveguide mode is attenuated by the resistance layer such as the resistance coating provided inside the container to guide the wave. Tube mode is gone.

【0009】[0009]

【実施例】実施例1.以下、この発明の一実施例を図を
用いて説明する。図1はこの発明によるマイクロ波半導
体回路用容器の実施例を示す構成図である。8は抵抗層
の一例である抵抗被膜、9は誘電体基板、10は金属被
膜である。またWは誘電体基板の厚さである。誘電体基
板9の表面に抵抗被膜8を設け、誘電体基板9を上蓋2
に半田付けできるように誘電体基板9の裏面に金属被膜
10を設けている。
EXAMPLES Example 1. An embodiment of the present invention will be described below with reference to the drawings. FIG. 1 is a configuration diagram showing an embodiment of a microwave semiconductor circuit container according to the present invention. 8 is a resistance film which is an example of a resistance layer, 9 is a dielectric substrate, and 10 is a metal film. W is the thickness of the dielectric substrate. The resistance coating 8 is provided on the surface of the dielectric substrate 9, and the dielectric substrate 9 is covered with the upper lid 2.
A metal coating 10 is provided on the back surface of the dielectric substrate 9 so that it can be soldered to the.

【0010】容器1の横幅で決まるカットオフ周波数を
使用周波数より十分高くなるように取れない時、容器1
内に導波管モードが立ち、容器内表面には図1の斜視図
の矢印に示すような電流が流れる。ここで、上蓋2に上
記のように構成された誘電体基板9を装着することによ
り、上蓋2および誘電体9の容器内表面には図1の断面
図の矢印のように電流が流れる。そして、電流は誘電体
基板9の表面に設けた抵抗被膜8によって減衰する。そ
の結果、電流の減衰と磁界の減衰が相乗しておこり容器
内に導波管モードがなくなりマイクロ波半導体回路4は
容器に悪影響されずに動作する。なお、誘電体基板9を
用いているのは誘電体基板9に抵抗被膜8や金属被膜1
0を形成することが容易にしかも安価にできることを考
慮したものである。したがって、誘電体基板9の厚さW
は容器内表面を伝わる性質をもつ電流が厚さWを越えて
抵抗被膜8側に流れやすくなるようにするためなるべく
薄いほうがよい。
When the cutoff frequency determined by the width of the container 1 cannot be set to be sufficiently higher than the operating frequency, the container 1
A waveguide mode stands inside, and a current flows through the inner surface of the container as indicated by the arrow in the perspective view of FIG. Here, by mounting the dielectric substrate 9 configured as described above on the upper lid 2, a current flows through the container inner surfaces of the upper lid 2 and the dielectric 9 as indicated by the arrow in the cross-sectional view of FIG. Then, the current is attenuated by the resistance coating 8 provided on the surface of the dielectric substrate 9. As a result, the attenuation of the current and the attenuation of the magnetic field occur synergistically, and the waveguide mode is lost in the container, and the microwave semiconductor circuit 4 operates without being adversely affected by the container. It should be noted that the dielectric substrate 9 is used because the resistance film 8 and the metal film 1 are formed on the dielectric substrate 9.
This is because it is easy and inexpensive to form 0. Therefore, the thickness W of the dielectric substrate 9
Is preferably as thin as possible so that an electric current having a property of transmitting on the inner surface of the container exceeds the thickness W and easily flows to the resistance film 8 side.

【0011】以上のように、表面に抵抗被膜8、裏面に
金属被膜10を設けた誘電体基板9を用いたマイクロ波
半導体用容器はフェライトの粉を素材にしたゴム状の吸
収体を用いたマイクロ波半導体回路用容器と、電気的に
同じ効果となる。
As described above, the microwave semiconductor container using the dielectric substrate 9 having the resistance coating 8 on the front surface and the metal coating 10 on the back surface uses the rubber-like absorber made of ferrite powder. It has the same electrical effect as the microwave semiconductor circuit container.

【0012】しかし、誘電体基板9は裏面に金属被膜1
0を設けており、上蓋2に装着するときに半田で装着す
ることができるため、従来ゴム状の吸収体を装着すると
きに使用していた接着剤を使う必要がなくなり、年数が
経つと接着の強度が弱まって吸収体が上蓋2より剥がれ
たり、フェライトを素材とした吸収体を使用しないため
フェライトの粉が半導体等の上に付着して特性が劣化し
たり破損したりすることはない。
However, the dielectric substrate 9 has a metal coating 1 on the back surface.
Since 0 is provided and can be attached with solder when attaching to the upper lid 2, it is not necessary to use the adhesive that was used when attaching a rubber-like absorber in the past, and the adhesive will be attached over the years. The strength is weakened so that the absorber is peeled off from the upper lid 2, and since the absorber made of ferrite is not used, the ferrite powder does not adhere to the semiconductor or the like and the characteristics are not deteriorated or damaged.

【0013】また、容器1内に導波管モードがたたなく
なるため、容器1の横幅によって決まるカットオフ周波
数を考慮することなく容器1の横幅を選ぶことができ、
容器を自由な大きさにすることもできる。
Further, since the waveguide mode is not lost in the container 1, the width of the container 1 can be selected without considering the cutoff frequency determined by the width of the container 1.
The container can be of any size.

【0014】実施例2.図2はこの発明のマイクロ波半
導体回路用容器の上蓋2の他の実施例の構成図である。
この上蓋2には抵抗被膜8が蒸着等により直接形成され
ている。このように、直接上蓋2の内面に抵抗被膜8を
形成すると実施例1で説明した誘電体基板9の厚さWの
分がなくなり、容器内表面を伝わる電流が抵抗被膜8に
流れやすくなり、抵抗被膜8の効果が増大する。
Example 2. FIG. 2 is a configuration diagram of another embodiment of the upper lid 2 of the microwave semiconductor circuit container according to the present invention.
The resistance coating 8 is directly formed on the upper lid 2 by vapor deposition or the like. As described above, when the resistance coating 8 is directly formed on the inner surface of the upper lid 2, the thickness W of the dielectric substrate 9 described in the first embodiment is lost, and the current transmitted through the inner surface of the container easily flows through the resistance coating 8. The effect of the resistance coating 8 is increased.

【0015】実施例3.図3は、上蓋2の他の実施例を
示す図であり、抵抗被膜8の形状を変えたものである。
電流は上蓋中央に向かって流れるため、中央に向かう電
流をさえぎるように抵抗被膜8を帯状にして方形を形成
した例である。
Example 3. FIG. 3 is a view showing another embodiment of the upper lid 2, in which the shape of the resistance coating 8 is changed.
Since the current flows toward the center of the upper lid, this is an example in which the resistive film 8 is formed in a band shape so as to block the current toward the center.

【0016】実施例4.図4はこの発明のマイクロ波半
導体回路用容器の他の実施例の構成図である。この容器
は容器内部の金属側面に抵抗被膜を設けている。この様
に抵抗被膜を容器内の金属側面に直接設けても良い。ま
た、抵抗被膜を設ける部分は一側面だけでなく他の側面
にあってもよく、また、電流が流れるところならどこに
設けても良い。
Example 4. FIG. 4 is a constitutional view of another embodiment of the microwave semiconductor circuit container of the present invention. This container is provided with a resistance coating on the metal side surface inside the container. In this way, the resistance coating may be directly provided on the metal side surface inside the container. Further, the portion where the resistance film is provided may be provided not only on one side surface but also on the other side surface, and may be provided anywhere where a current flows.

【0017】実施例5.上記実施例1〜4においては、
マイクロ波半導体回路用の容器を例にして説明したが、
この発明はマイクロ波半導体回路を収容する場合に限る
ものでなく、その他の電子回路を収容する電子回路用容
器であってもかまわない。
Embodiment 5. In the above Examples 1 to 4,
Although the container for the microwave semiconductor circuit has been described as an example,
The present invention is not limited to the case of accommodating the microwave semiconductor circuit, but may be an electronic circuit container accommodating other electronic circuits.

【0018】[0018]

【発明の効果】以上のようにこの発明によれば、導波管
モードが立つようなマイクロ波半導体回路用容器等の電
子回路用容器において容器内部に抵抗被膜等の抵抗層を
設ける構成としたため、従来使用していたフェライトの
粉を素材にしたゴム状の吸収体やそれを装着するために
使用していた接着剤が不要となり、マイクロ波半導体回
路等の電子回路に悪影響を与えない電子回路用容器を得
ることができる。また、容器内に導波管モードが立たな
くなるため、容器の横幅で決まるカットオフ周波数を考
慮することなく容器の横幅を選ぶことができ、容器を自
由な大きさにすることもできる。
As described above, according to the present invention, a resistance layer such as a resistance coating is provided inside a container for an electronic circuit such as a container for a microwave semiconductor circuit in which a waveguide mode stands. , The electronic circuit that does not have a bad influence on the electronic circuit such as microwave semiconductor circuit because the rubber-like absorber made of ferrite powder and the adhesive used for mounting it are no longer needed. A container for use can be obtained. Further, since the waveguide mode does not stand in the container, the lateral width of the container can be selected without considering the cutoff frequency determined by the lateral width of the container, and the container can be freely sized.

【図面の簡単な説明】[Brief description of drawings]

【図1】この発明のマイクロ波半導体回路用容器の一実
施例による構成図である。
FIG. 1 is a configuration diagram of an embodiment of a microwave semiconductor circuit container according to the present invention.

【図2】この発明のマイクロ波半導体回路用容器の他の
実施例による構成図である。
FIG. 2 is a configuration diagram of another embodiment of the microwave semiconductor circuit container of the present invention.

【図3】この発明のマイクロ波半導体回路用容器の他の
実施例による構成図である。
FIG. 3 is a structural view of another embodiment of the microwave semiconductor circuit container of the present invention.

【図4】この発明のマイクロ波半導体回路用容器の他の
実施例による構成図である。
FIG. 4 is a structural view of another embodiment of the microwave semiconductor circuit container of the present invention.

【図5】従来のマイクロ波半導体回路用容器の構成図で
ある。
FIG. 5 is a configuration diagram of a conventional microwave semiconductor circuit container.

【符号の説明】[Explanation of symbols]

1 容器 2 上蓋 3 絶縁性基板 4 マイクロ波半導体回路 5 入力端子 6 出力端子 7 バイアス端子 8 抵抗被膜 9 誘電体被膜 10 金属被膜 1 Container 2 Top Lid 3 Insulating Substrate 4 Microwave Semiconductor Circuit 5 Input Terminal 6 Output Terminal 7 Bias Terminal 8 Resistive Film 9 Dielectric Film 10 Metal Film

Claims (1)

【特許請求の範囲】 【請求項1】マイクロ波半導体回路等の電子回路を収納
する電子回路用容器において、容器内面に抵抗層を設け
ていることを特徴とする電子回路用容器。
Claim: What is claimed is: 1. An electronic circuit container for accommodating an electronic circuit such as a microwave semiconductor circuit, wherein a resistance layer is provided on the inner surface of the container.
JP3156846A 1991-06-27 1991-06-27 Package for electronic circuit Pending JPH057101A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3156846A JPH057101A (en) 1991-06-27 1991-06-27 Package for electronic circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3156846A JPH057101A (en) 1991-06-27 1991-06-27 Package for electronic circuit

Publications (1)

Publication Number Publication Date
JPH057101A true JPH057101A (en) 1993-01-14

Family

ID=15636654

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3156846A Pending JPH057101A (en) 1991-06-27 1991-06-27 Package for electronic circuit

Country Status (1)

Country Link
JP (1) JPH057101A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6741142B1 (en) * 1999-03-17 2004-05-25 Matsushita Electric Industrial Co., Ltd. High-frequency circuit element having means for interrupting higher order modes

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52122633U (en) * 1976-03-12 1977-09-17
JPS6063948U (en) * 1983-10-06 1985-05-07 日本電気株式会社 Metal hermetic container for microwave integrated circuits

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52122633U (en) * 1976-03-12 1977-09-17
JPS6063948U (en) * 1983-10-06 1985-05-07 日本電気株式会社 Metal hermetic container for microwave integrated circuits

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6741142B1 (en) * 1999-03-17 2004-05-25 Matsushita Electric Industrial Co., Ltd. High-frequency circuit element having means for interrupting higher order modes

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