JPH0567825A - Semiconductor laser drive circuit - Google Patents

Semiconductor laser drive circuit

Info

Publication number
JPH0567825A
JPH0567825A JP3227299A JP22729991A JPH0567825A JP H0567825 A JPH0567825 A JP H0567825A JP 3227299 A JP3227299 A JP 3227299A JP 22729991 A JP22729991 A JP 22729991A JP H0567825 A JPH0567825 A JP H0567825A
Authority
JP
Japan
Prior art keywords
semiconductor laser
circuit
light intensity
temperature
reference voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3227299A
Other languages
Japanese (ja)
Inventor
Tsutomu Ohashi
勉 大橋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Brother Industries Ltd
Original Assignee
Brother Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Brother Industries Ltd filed Critical Brother Industries Ltd
Priority to JP3227299A priority Critical patent/JPH0567825A/en
Publication of JPH0567825A publication Critical patent/JPH0567825A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To realize a stable relation independent to the temperature in the relation between an input digital and generating light intensity by compensating the temperature characteristics of dark current in a monitor photodiode provided with a temperature compensation element in a reference voltage circuit. CONSTITUTION:This is composed of a semiconductor laser 1, drive circuit 2, monitor photodiode 3, amplifier circuit 4, reference voltage circuit 5, comparison circuit 6, and threshold information circuit 7, and generates a laser light of modulated light intensity proportional to the inputted digital data. The circuit 5 is composed of a constant current circuit 51, resistor 52 and posistor 53, so that it is added with the temperature characteristics to cancel the beam intensity changes in the laser 1 due to the changes of dark current in the diode 3, thereby the beam intensity does not vary depending on the temperature. Even when the amount of dark current varies based on the temperature, the relation between the inputted data and beam intensity does not change and as a result, stable relation is realized.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、外部より入力される入
力信号に対応した強度のレーザ光を発生する半導体レー
ザ駆動回路に関し、更に詳細には温度補償素子を備えた
半導体レーザ駆動回路に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor laser driving circuit for generating a laser beam having an intensity corresponding to an input signal inputted from the outside, and more particularly to a semiconductor laser driving circuit having a temperature compensating element.

【0002】[0002]

【従来の技術】レーザプリンタ等では半導体レーザから
の変調光で感光体を走査、露光して画像の書き込みを行
なっているが、周知のように半導体レーザはしきい値電
流と呼ぶ電流値を超える電流で駆動されるとレーザ光を
出射する特性を有している。このしきい値電流は個々の
素子によってまた温度によって大きく変化するので、半
導体レーザの出力する光強度は同じ駆動電流であっても
個々の素子によって大きく異なるし、また温度に対して
非常に不安定である(図9参照)。
2. Description of the Related Art In a laser printer or the like, a photosensitive member is scanned and exposed by modulated light from a semiconductor laser to write an image. As is well known, the semiconductor laser exceeds a current value called a threshold current. It has a characteristic of emitting a laser beam when driven by an electric current. This threshold current varies greatly depending on each element and temperature, so the light intensity output by the semiconductor laser varies greatly depending on each element even with the same drive current, and is extremely unstable with respect to temperature. (See FIG. 9).

【0003】このような不安定なレーザビームで露光し
て作像を行なうと出力画像につぶれやかすれが生じ、画
像品質を著しく損なう。このため、半導体レーザの周囲
温度が変化する環境下では半導体レーザの出力制御装置
等により半導体レーザの光強度を安定化させる必要があ
る。
When an image is formed by exposing with such an unstable laser beam, the output image is crushed or blurred, and the image quality is significantly impaired. Therefore, in an environment where the ambient temperature of the semiconductor laser changes, it is necessary to stabilize the light intensity of the semiconductor laser by an output control device of the semiconductor laser or the like.

【0004】そこで従来は、しきい値電流の変化によっ
て半導体レーザの光強度が変化するのを防ぐために、半
導体レーザ駆動回路においては、本来の変調動作の合間
に、しきい値電流手段が所定の時間間隔でモニタダイオ
ードにより半導体レーザの発生するレーザ光の光強度を
モニタして所定の入力信号(以下制御信号という)に対
応する該光強度が一定になるように半導体レーザに流す
バイアス電流を制御する制御動作を行っていた。あるい
はペルチェ素子等を用いて半導体レーザの温度を一定に
保って駆動していた。
Therefore, conventionally, in order to prevent the light intensity of the semiconductor laser from changing due to the change in the threshold current, in the semiconductor laser drive circuit, the threshold current means is set to a predetermined value between the original modulation operations. The monitor diode monitors the light intensity of the laser light generated by the semiconductor laser at time intervals, and controls the bias current flowing to the semiconductor laser so that the light intensity corresponding to a predetermined input signal (hereinafter referred to as a control signal) becomes constant. The control operation was performed. Alternatively, a Peltier element or the like is used to drive the semiconductor laser while keeping the temperature constant.

【0005】[0005]

【発明が解決しようとする課題】しかしながら、モニタ
ダイオードの種類によっては、図2に示すように、温度
が上昇すると暗電流が増加する特性を有している。そう
するとレーザ光の光強度が大きくなったものとしてしき
い値電流手段が駆動電流を減らすので結果として光強度
は減少してしまううという問題点があった。
However, depending on the type of monitor diode, as shown in FIG. 2, the dark current increases as the temperature rises. Then, there is a problem that the threshold current means reduces the drive current as if the light intensity of the laser light becomes large, and as a result, the light intensity decreases.

【0006】またペルチェ素子等を用いる方法では装置
が大規模になってしまったり、結露の恐れがあるという
問題点があった。
Further, the method using the Peltier element or the like has a problem that the apparatus becomes large in scale and there is a risk of dew condensation.

【0007】本発明は、上述した問題点を解決するため
になされたものであり、その目的は、ペルチェ素子等を
用いることなく、温度が変化して暗電流の大きさが変化
しても入力データと光強度の関係が変化しない半導体レ
ーザ駆動回路を提供することにある。
The present invention has been made in order to solve the above-mentioned problems, and an object thereof is to input an input even if the temperature changes and the magnitude of dark current changes without using a Peltier element or the like. An object of the present invention is to provide a semiconductor laser drive circuit in which the relationship between data and light intensity does not change.

【0008】[0008]

【課題を解決するための手段】この目的を達成するため
に本発明の半導体レーザ駆動回路は、電流駆動されてレ
ーザ光を発生する半導体レーザと、該半導体レーザのレ
ーザ光の一部を受光して光電流に変換するモニタ手段
と、該光電流を増幅して光強度信号を出力する増幅器
と、レーザ光の光強度の基準となる基準電圧を出力する
基準電圧手段と、該光強度信号と該基準電圧との大小を
比較する比較器と、該比較器の比較結果により、該半導
体レーザのしきい値電流に相当するしきい値情報を出力
して、光強度を一定に保つしきい値電流手段と、外部よ
り入力される入力信号と該しきい値情報を加算した結果
に基づいて駆動電流を出力するドライブ手段とからなる
半導体レーザ駆動回路であって、上記基準電圧手段にモ
ニタ手段の温度特性を打ち消す温度特性を有した温度補
償素子を備えている。
In order to achieve this object, a semiconductor laser drive circuit of the present invention receives a semiconductor laser which is current-driven to generate a laser beam and a part of the laser beam of the semiconductor laser. Means for converting the photocurrent into a photocurrent, an amplifier for amplifying the photocurrent and outputting a light intensity signal, a reference voltage means for outputting a reference voltage as a reference of the light intensity of the laser light, and the light intensity signal. A comparator that compares the magnitude with the reference voltage and a threshold value that outputs threshold information corresponding to the threshold current of the semiconductor laser based on the comparison result of the comparator and keeps the light intensity constant. A semiconductor laser drive circuit comprising a current means and a drive means for outputting a drive current based on a result of addition of an input signal inputted from the outside and the threshold value information, wherein the reference voltage means is provided with a monitor means. Temperature characteristics And a temperature compensating element having a temperature characteristic extinguish Chi.

【0009】[0009]

【作用】上記の構成を有する本発明の半導体レーザ駆動
回路においては、以下に説明するような制御動作によっ
て入力信号と光強度の関係が一定に保たれる。
In the semiconductor laser drive circuit of the present invention having the above structure, the relationship between the input signal and the light intensity is kept constant by the control operation described below.

【0010】すなわち、本来の変調動作の合間に制御動
作が開始されるならば、入力信号を所定の制御信号に切
り替え、しきい値電流手段が発生するしきい値情報と加
算してドライブ手段は該加算結果に基づいて半導体レー
ザを電流駆動し、半導体レーザはレーザ光を出射する。
That is, if the control operation is started between the original modulation operations, the input signal is switched to a predetermined control signal, and the threshold value information generated by the threshold current means is added to the drive means. The semiconductor laser is current-driven based on the addition result, and the semiconductor laser emits laser light.

【0011】モニタ手段は例えばフォトダイオードによ
り構成されるものであり、上記レーザ光の一部を受光
し、光強度に比例した光電流を発生する。該光電流は増
幅器により増幅されて光強度信号となり、比較器により
基準電圧手段が出力する基準電圧と比較される。
The monitor means is composed of, for example, a photodiode, receives a part of the laser light, and generates a photocurrent proportional to the light intensity. The photocurrent is amplified by an amplifier into a light intensity signal, which is compared with a reference voltage output from a reference voltage means by a comparator.

【0012】しきい値電流手段は比較結果が基準電圧よ
りも光強度信号が大きいならば所定光強度より大きいの
でしきい値情報を減らす。また、基準電圧よりも光強度
信号が小さいならば所定光強度より小さいのでしきい値
情報を増やす。
The threshold current means reduces the threshold information because the comparison result is larger than the predetermined light intensity if the light intensity signal is larger than the reference voltage. If the light intensity signal is smaller than the reference voltage, the light intensity signal is smaller than the predetermined light intensity, so the threshold value information is increased.

【0013】該制御動作を繰り返すことにより制御信号
に対するレーザ光の光強度を一定に保つのである。
By repeating the control operation, the light intensity of the laser light with respect to the control signal is kept constant.

【0014】この時、しきい値情報は半導体レーザのし
きい値電流の大きさに対応しており、温度変化によりし
きい値電流が変化してもそれにつれてしきい値情報も変
化するので半導体レーザの光強度は一定に保たれる。
At this time, the threshold information corresponds to the magnitude of the threshold current of the semiconductor laser, and even if the threshold current changes due to temperature change, the threshold information also changes accordingly. The light intensity of the laser is kept constant.

【0015】モニタ手段が発生する電流はレーザ光によ
る光電流とそうでない暗電流とからなり、温度変化によ
る暗電流の変化は、該対応する光強度信号の変化となる
が比較される基準電圧が基準電圧手段の温度補償素子に
より変化して打ち消すので、すなわち、温度が高くなっ
て暗電流が大きくなると見かけ上光強度信号は大きくな
るが基準電圧も同様に大きくなるので実際の光強度は変
化しないし、温度が低くなった場合についても同様に光
強度は変化しない。
The current generated by the monitor means is composed of a photocurrent caused by laser light and a dark current not caused by the laser light. A change in dark current due to a change in temperature results in a change in the corresponding light intensity signal, but the reference voltage to be compared is Because the temperature compensating element of the reference voltage means changes and cancels out, that is, when the temperature rises and the dark current increases, the light intensity signal apparently increases, but the reference voltage also increases, so the actual light intensity does not change. However, the light intensity does not change even when the temperature becomes low.

【0016】従って、入力されるディジタルデータと発
生する光強度の関係は温度によらず安定な関係となる。
Therefore, the relationship between the input digital data and the generated light intensity is stable regardless of the temperature.

【0017】[0017]

【実施例】以下、本発明を具体化した一実施例を図面を
参照して説明する。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings.

【0018】図1乃至図9を参照して本実施例の半導体
レーザ駆動回路の構成を説明する。
The structure of the semiconductor laser drive circuit of this embodiment will be described with reference to FIGS.

【0019】本発明の半導体レーザ駆動回路は図1に図
示するように半導体レーザ1とドライブ回路2とモニタ
フォトダイオード3と増幅回路4と基準電圧回路5と比
較回路6としきい値情報回路7とから構成されるもの
で、入力される例えば8ビットの入力ディジタルデータ
に比例して変調された光強度のレーザ光を発生するもの
である。
As shown in FIG. 1, the semiconductor laser drive circuit of the present invention includes a semiconductor laser 1, a drive circuit 2, a monitor photodiode 3, an amplifier circuit 4, a reference voltage circuit 5, a comparison circuit 6, and a threshold value information circuit 7. And generates a laser beam having a light intensity modulated in proportion to the input digital data of, for example, 8 bits.

【0020】ドライブ回路2は図3に図示するように加
算回路21とD/A変換回路22と駆動回路23とから
構成されるものであり、入力ディジタルデータとしきい
値データと加算してD/A変換して、該加算値に比例し
た電流を半導体レーザ1に出力するものである。
The drive circuit 2 is composed of an adder circuit 21, a D / A conversion circuit 22 and a drive circuit 23 as shown in FIG. 3, and adds D / A by adding input digital data and threshold data. A conversion is performed and a current proportional to the added value is output to the semiconductor laser 1.

【0021】モニタフォトダイオード3は通常半導体レ
ーザ1と同一容器に格納され、所定の一定電圧の逆バイ
アス電圧が印加されており、半導体レーザ1の背面光を
受光して光電流を発生するものである。先に説明したよ
うに受光によらず温度によって大きさの変化する暗電流
も発生している。この2つの電流を合わせてモニタ電流
と呼ぶ。
The monitor photodiode 3 is usually housed in the same container as the semiconductor laser 1, to which a reverse bias voltage of a predetermined constant voltage is applied, and receives the back light of the semiconductor laser 1 to generate a photocurrent. is there. As described above, a dark current whose magnitude changes depending on temperature is also generated regardless of light reception. The two currents are collectively called a monitor current.

【0022】増幅回路4は図4に図示するようにオぺア
ンプ41と抵抗42からなるもので、モニタ電流を増幅
しモニタ電圧に変換する回路である。
As shown in FIG. 4, the amplifier circuit 4 comprises an operational amplifier 41 and a resistor 42, and is a circuit for amplifying a monitor current and converting it into a monitor voltage.

【0023】基準電圧回路5は図5に図示するように定
電流回路51と抵抗52と感温素子の一種であるポジス
タ53とからなるもので、レーザ光の光強度の基準とな
る基準電圧を発生するものである。
As shown in FIG. 5, the reference voltage circuit 5 is composed of a constant current circuit 51, a resistor 52 and a posistor 53 which is a kind of temperature sensitive element. The reference voltage circuit 5 serves as a reference voltage for the light intensity of laser light. It occurs.

【0024】比較回路6は図6に図示するようにコンパ
レータ61から構成されるもので、モニタ電圧と基準電
圧を比較し、レーザ光の光強度が基準光強度より大きい
のか否かを判定して判定信号を出力するものである。
The comparison circuit 6 is composed of a comparator 61 as shown in FIG. 6, and compares the monitor voltage with the reference voltage to judge whether or not the light intensity of the laser light is larger than the reference light intensity. It outputs a judgment signal.

【0025】しきい値情報回路7は図7に図示するよう
に制御回路71とアップダウンカウンタ(以下カウン
タ)72とから構成され、後に説明するような判定信号
にもとづく制御動作によりカウンタ72のカウント値を
増減してしきい値データとして出力するものである。し
きい値データは半導体レーザ1のしきい値電流に対応す
るものであり、しきい値電流の増減に伴い増減すること
により入力ディジタルデータと半導体レーザの光強度の
関係を一定に保つ働きをするものである。
As shown in FIG. 7, the threshold value information circuit 7 comprises a control circuit 71 and an up / down counter (hereinafter, counter) 72. The counter 72 counts by a control operation based on a determination signal as described later. The value is increased / decreased and output as threshold data. The threshold data corresponds to the threshold current of the semiconductor laser 1, and increases / decreases with the increase / decrease of the threshold current to keep the relationship between the input digital data and the light intensity of the semiconductor laser constant. It is a thing.

【0026】次に、上述されたように構成された半導体
レーザ駆動回路の入力ディジタルデータと半導体レーザ
1の光強度の関係を一定に保つ制御動作について説明す
る。
Next, a control operation for keeping the relationship between the input digital data of the semiconductor laser driving circuit configured as described above and the light intensity of the semiconductor laser 1 constant will be described.

【0027】すなわち、図示及び説明を省略する制御信
号が、本来の変調時期の合間に制御回路71に入力され
ると、入力ディジタルデータは制御データに切り替えら
れ、例えばFFhとなり、カウンタ72のカウント値は
所定数Nだけ減じられる。(Nは正の整数)半導体レー
ザ1の背面光がモニタフォトダイオード3に入光し、光
電流を発生する。光電流と暗電流の和であるモニタ電流
は増幅回路4で増幅され基準電圧と比較回路6で大小比
較される。該比較出力はカウンタ72に接続されてお
り、比較回路6が、所定の発光強度に対応する基準電圧
53よりもモニタしている光強度のほうが大きいと判定
するまで説明を省略するクロック信号CLKによりカウ
ンタ72は2Nを限度としてカウントアップされる。
That is, when a control signal, not shown and described, is input to the control circuit 71 between the original modulation timings, the input digital data is switched to the control data and becomes, for example, FFh and the count value of the counter 72. Is reduced by a predetermined number N. (N is a positive integer) The back light of the semiconductor laser 1 enters the monitor photodiode 3 and generates a photocurrent. The monitor current, which is the sum of the photocurrent and the dark current, is amplified by the amplifier circuit 4 and compared in magnitude with the reference voltage by the comparator circuit 6. The comparison output is connected to the counter 72, and the clock signal CLK whose description is omitted until the comparison circuit 6 determines that the monitored light intensity is higher than the reference voltage 53 corresponding to the predetermined light emission intensity. The counter 72 is counted up with a limit of 2N.

【0028】1回の制御動作ではカウンタ72は±Nだ
けカウント値を変化させることができ、Nを大きくすれ
ば制御利得は大きくなり、Nを小さくすれば制御利得は
小さくなる。
In one control operation, the counter 72 can change the count value by ± N. When N is increased, the control gain is increased, and when N is decreased, the control gain is decreased.

【0029】制御信号は所定の適当な時間間隔で発生し
ており、半導体レーザ1のしきい値電流が変化してもそ
れに追従してしきい値回路5のカウンタ72のカウント
値(すなわちしきい値データ)が変化し、しきい値情報
回路7は半導体レーザ1のしきい値電流の変化を吸収
し、入力されるディジタルデータがFFhの時の該光強
度をPffに保つのである。
The control signal is generated at a predetermined appropriate time interval, and even if the threshold current of the semiconductor laser 1 changes, the control signal follows the change and the count value of the counter 72 of the threshold circuit 5 (that is, the threshold value). (Value data) changes, the threshold value information circuit 7 absorbs the change in the threshold current of the semiconductor laser 1, and keeps the light intensity at Pff when the input digital data is FFh.

【0030】半導体レーザ1は図2に示すように、駆動
電流がしきい値電流を越えてからは光強度は直線的に増
加する特性であり、上記制御動作が行われているので、
入力ディジタルデータと光強度の関係は一定のものとな
る。
As shown in FIG. 2, the semiconductor laser 1 has a characteristic that the light intensity increases linearly after the drive current exceeds the threshold current, and the above control operation is performed.
The relationship between the input digital data and the light intensity is constant.

【0031】次に、本発明の特徴部分である基準電圧回
路5の動作について説明する。
Next, the operation of the reference voltage circuit 5 which is a characteristic part of the present invention will be described.

【0032】モニタフォトダイオード3が発生するモニ
タ電流はレーザ光による光電流と暗電流の合計であるの
で次に示す式1のように表せる。ここでImはモニタ電
流、Ilは半導体レーザ1の光強度がPのときの光電
流、Idは温度tでの暗電流である。
Since the monitor current generated by the monitor photodiode 3 is the sum of the photocurrent and the dark current due to the laser light, it can be expressed by the following equation 1. Here, Im is a monitor current, Il is a photocurrent when the light intensity of the semiconductor laser 1 is P, and Id is a dark current at a temperature t.

【0033】 Im=Il+Id (式1) モニタフォトダイオード3において暗電流Idは温度上
昇により増加する特性を有しており、温度tでの暗電流
Idは逆バイアス電圧が一定なので定数K1を用いて次
の式2のように表せる。
Im = Il + Id (Equation 1) In the monitor photodiode 3, the dark current Id has a characteristic of increasing with temperature rise. Since the reverse bias voltage of the dark current Id at the temperature t is constant, the constant K1 is used. It can be expressed as the following Expression 2.

【0034】 Id=K1・exp(t/10.9) (式2) 該モニタ電流Imは増幅回路4によりモニタ電圧Vmに
増幅変換される。変換定数をK2としてこれは次の式3
のように表せる。
Id = K1 · exp (t / 10.9) (Equation 2) The monitor current Im is amplified and converted into a monitor voltage Vm by the amplifier circuit 4. Assuming that the conversion constant is K2,
Can be expressed as

【0035】 Vm=K2・Im (式3) ポジスタ53はその抵抗値の対数が温度に比例するとい
う温度特性を有しており、例えば図8で示されるような
ものであり、温度tでのポジスタ53の抵抗値Rthは
次に示す式4のようである。(Rp、Dは定数である) Rth=Rp・exp(t/D) (式4) 基準電圧回路5が出力する基準電圧Vrefは定電流回
路51が出力する定電流の大きさをIcで、抵抗52の
大きさをRで表すならば、次に示す式5のようである。
Vm = K2 · Im (Equation 3) The posistor 53 has a temperature characteristic that the logarithm of its resistance value is proportional to the temperature, as shown in FIG. 8, for example, and at the temperature t. The resistance value Rth of the posistor 53 is as shown in the following Expression 4. (Rp and D are constants) Rth = Rp · exp (t / D) (Equation 4) The reference voltage Vref output from the reference voltage circuit 5 is Ic which is the magnitude of the constant current output from the constant current circuit 51. If the size of the resistor 52 is represented by R, it is as shown in the following Expression 5.

【0036】 Vref=Ic・(R+Rth) (式5) 先に説明したように半導体レーザ1の光強度を一定に保
つ制御動作が行われているので、式3で表されるモニタ
電圧Vmは式5で表される基準電圧Vrefに等しくな
る。従って次に示す式6を得る。
Vref = Ic · (R + Rth) (Equation 5) Since the control operation for keeping the light intensity of the semiconductor laser 1 constant is performed as described above, the monitor voltage Vm expressed by Equation 3 is It becomes equal to the reference voltage Vref represented by 5. Therefore, the following Equation 6 is obtained.

【0037】 K2・{Il+K1・exp(t/10.9)} =Ic・{R+Rp・exp(t/D)} (式6) 半導体レーザ1の光強度による光電流Ilが温度tの影
響を受けないためには式6で温度tの項が存在しないこ
とが必要である。これは次に示す式7で表され、このと
き半導体レーザ1の光強度はPである。
K2 · {Il + K1 · exp (t / 10.9)} = Ic · {R + Rp · exp (t / D)} (Equation 6) The photocurrent Il due to the light intensity of the semiconductor laser 1 influences the temperature t. In order to avoid this, it is necessary that the term of the temperature t does not exist in the equation 6. This is expressed by the following Equation 7, and the light intensity of the semiconductor laser 1 is P at this time.

【0038】 K1・K2・exp(t/10.9) =Ic・Rp・exp(t/D) (式7) 式7から式8、式9を得る。K1 · K2 · exp (t / 10.9) = Ic · Rp · exp (t / D) (Equation 7) Equations 7 to 8 and 9 are obtained.

【0039】 D=10.9 (式8) Rp=K1・K2/Ic (式9) すなわち、式8、式9を満足するようにポジスタ53を
選べばモニタフォトダイオード3の温度特性は基準電圧
の温度特性と打ち消し合って、半導体レーザ1の光強度
は温度によらず変化しない。
D = 10.9 (Equation 8) Rp = K1 · K2 / Ic (Equation 9) That is, if the posistor 53 is selected so as to satisfy the equations 8 and 9, the temperature characteristic of the monitor photodiode 3 becomes the reference voltage. By canceling each other out, the light intensity of the semiconductor laser 1 does not change regardless of the temperature.

【0040】以上、詳述したように、基準電圧回路5が
出力する基準電圧は、温度補償素子であるポジスタ53
により、モニタフォトダイオード3の暗電流の変化によ
る半導体レーザ1の光強度の変動を打ち消すような温度
特性を付加されているので光強度は温度により変動しな
い。
As described above in detail, the reference voltage output from the reference voltage circuit 5 is the posistor 53 which is a temperature compensation element.
As a result, since the temperature characteristic is added so as to cancel the variation of the light intensity of the semiconductor laser 1 due to the change of the dark current of the monitor photodiode 3, the light intensity does not vary with the temperature.

【0041】従って、入力されるディジタルデータと発
生する光強度の関係は温度によらず安定な関係となる。
Therefore, the relationship between the input digital data and the generated light intensity is stable regardless of the temperature.

【0042】[0042]

【発明の効果】以上説明したことから明かなように、本
発明の半導体レーザ駆動回路は基準電圧回路に温度補償
素子を備えて基準電圧に温度特性をもたせ、モニタフォ
トダイオードの暗電流の温度特性を補償するように構成
されているので、温度が変化しても入力されるディジタ
ルデータと半導体レーザが発生するレーザ光の光強度の
関係は安定となる効果を有している。
As is apparent from the above description, the semiconductor laser driving circuit of the present invention includes a temperature compensating element in the reference voltage circuit so that the reference voltage has a temperature characteristic, and the temperature characteristic of the dark current of the monitor photodiode is increased. Therefore, even if the temperature changes, the relationship between the input digital data and the light intensity of the laser light generated by the semiconductor laser is stable.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の半導体レーザ駆動回路の全体の構成を
示した図である。
FIG. 1 is a diagram showing an overall configuration of a semiconductor laser drive circuit of the present invention.

【図2】モニタダイオードの暗電流の温度特性を示す図
である。
FIG. 2 is a diagram showing temperature characteristics of dark current of a monitor diode.

【図3】ドライブ回路の構成を示した図である。FIG. 3 is a diagram showing a configuration of a drive circuit.

【図4】増幅回路を示した図である。FIG. 4 is a diagram showing an amplifier circuit.

【図5】基準電圧回路を示した図である。FIG. 5 is a diagram showing a reference voltage circuit.

【図6】比較回路を示した図である。FIG. 6 is a diagram showing a comparison circuit.

【図7】しきい値情報回路の構成を示すブロック図であ
る。
FIG. 7 is a block diagram showing a configuration of a threshold information circuit.

【図8】ポジスタの温度特性を示す図である。FIG. 8 is a diagram showing a temperature characteristic of a posistor.

【図9】半導体レーザの駆動電流と光強度の関係を示し
た図である。
FIG. 9 is a diagram showing a relationship between a drive current of a semiconductor laser and light intensity.

【符号の説明】[Explanation of symbols]

1 半導体レーザ 2 ドライブ回路 3 モニタフォトダイオード 4 増幅回路 5 基準電圧回路 6 比較回路 7 制御回路 53 ポジスタ 1 semiconductor laser 2 drive circuit 3 monitor photodiode 4 amplifier circuit 5 reference voltage circuit 6 comparison circuit 7 control circuit 53 posistor

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 電流駆動されてレーザ光を発生する半導
体レーザと、 該半導体レーザのレーザ光の一部を受光して光電流に変
換するモニタ手段と、 該光電流を増幅して光強度信号を出力する増幅器と、 レーザ光の光強度の基準となる基準電圧を出力する基準
電圧手段と、 該光強度信号と該基準電圧との大小を比較する比較器
と、 該比較器の比較結果により、該半導体レーザのしきい値
電流に相当するしきい値情報を出力して、光強度を一定
に保つしきい値電流手段と、 外部より入力される入力信号と該しきい値情報を加算し
た結果に基づいて駆動電流を出力するドライブ手段とか
らなる半導体レーザ駆動回路において、 上記基準電圧手段に所定の温度特性を有する温度補償素
子を備え、モニタ手段の温度特性を打ち消す温度特性を
もたせたことを特徴とする半導体レーザ駆動回路。
1. A semiconductor laser which is current-driven to generate a laser beam, a monitor means for receiving a part of the laser beam of the semiconductor laser and converting it into a photocurrent, and an optical intensity signal for amplifying the photocurrent. A reference voltage means for outputting a reference voltage serving as a reference for the light intensity of the laser light, a comparator for comparing the magnitude of the light intensity signal and the reference voltage, and a comparison result of the comparator. , The threshold information corresponding to the threshold current of the semiconductor laser is output, and the threshold current means for keeping the light intensity constant, the input signal inputted from the outside and the threshold information are added. In a semiconductor laser drive circuit comprising drive means for outputting a drive current based on the result, the reference voltage means is provided with a temperature compensating element having a predetermined temperature characteristic, and the temperature characteristic of the monitor means is canceled. The semiconductor laser drive circuit, characterized in that.
JP3227299A 1991-09-06 1991-09-06 Semiconductor laser drive circuit Pending JPH0567825A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3227299A JPH0567825A (en) 1991-09-06 1991-09-06 Semiconductor laser drive circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3227299A JPH0567825A (en) 1991-09-06 1991-09-06 Semiconductor laser drive circuit

Publications (1)

Publication Number Publication Date
JPH0567825A true JPH0567825A (en) 1993-03-19

Family

ID=16858642

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3227299A Pending JPH0567825A (en) 1991-09-06 1991-09-06 Semiconductor laser drive circuit

Country Status (1)

Country Link
JP (1) JPH0567825A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004288868A (en) * 2003-03-20 2004-10-14 Fuji Xerox Co Ltd Driver for light emitting device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004288868A (en) * 2003-03-20 2004-10-14 Fuji Xerox Co Ltd Driver for light emitting device
JP4590828B2 (en) * 2003-03-20 2010-12-01 富士ゼロックス株式会社 Light emitting element driving device

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