JPH056542Y2 - - Google Patents
Info
- Publication number
- JPH056542Y2 JPH056542Y2 JP1981065913U JP6591381U JPH056542Y2 JP H056542 Y2 JPH056542 Y2 JP H056542Y2 JP 1981065913 U JP1981065913 U JP 1981065913U JP 6591381 U JP6591381 U JP 6591381U JP H056542 Y2 JPH056542 Y2 JP H056542Y2
- Authority
- JP
- Japan
- Prior art keywords
- resistor
- transistor
- collector
- power supply
- voltage detection
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000001514 detection method Methods 0.000 claims description 14
- 239000004065 semiconductor Substances 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000007257 malfunction Effects 0.000 description 1
Landscapes
- Measurement Of Current Or Voltage (AREA)
- Emergency Protection Circuit Devices (AREA)
Description
【考案の詳細な説明】
本考案は、電圧検出回路に関し、特に、温度補
償範囲を拡張した電圧検出回路に関するものであ
る。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a voltage detection circuit, and particularly to a voltage detection circuit with an extended temperature compensation range.
電池駆動される電子機器においては、電池電圧
の低下に伴う内部回路の誤動作を未然に防止する
ために、電源電圧が所定のレベルまで低下したと
きに、そのことを検出し、検出信号を出力する電
圧検出回路が用いられる。 In battery-powered electronic equipment, in order to prevent internal circuit malfunction due to a drop in battery voltage, it is necessary to detect when the power supply voltage has dropped to a predetermined level and output a detection signal. A voltage detection circuit is used.
従来、電池駆動する電子機器の電源電圧を検出
する電圧検出回路として、第１図に示すようなバ
ンドギヤツプ型電圧検出回路がある。この電圧検
出回路は、電源電圧VCCと接地レベル間に、ベー
スとコレクタが共通に接続された第１トランジス
タQ11及び抵抗R11が接続されると共に、上記第
１トランジスタQ11のベース・コレクタ接続点に
ベースが接続され、エミツタが抵抗R12を介して
接地レベルに、コレクタが抵抗R13を介して電源
VCCに接続された第２トランジスタQ12、及び該
第２トランジスタQ12と抵抗R13との結合点にベ
ースが接続され、エミツタが接地レベルに接続さ
れると共にコレクタが抵抗R14を介して電源VCC
に接続された第３トランジスタQ13が設けられて
構成されている。電圧検出信号は第３トランジス
タQ13と抵抗R14との接続点から導出されている。 2. Description of the Related Art Conventionally, as a voltage detection circuit for detecting the power supply voltage of a battery-powered electronic device, there is a bandgap type voltage detection circuit as shown in FIG. In this voltage detection circuit, a first transistor Q 11 whose base and collector are commonly connected and a resistor R 11 are connected between the power supply voltage V CC and the ground level, and the base and collector of the first transistor Q 11 are connected in common. The base is connected to the connection point, the emitter is connected to ground level through resistor R 12 , and the collector is connected to the power supply through resistor R 13 .
A second transistor Q 12 is connected to V CC , and its base is connected to the node between the second transistor Q 12 and a resistor R 13 , its emitter is connected to the ground level, and its collector is connected via a resistor R 14 . Power supply V CC
A third transistor Q13 connected to is provided and configured. The voltage detection signal is derived from the connection point between the third transistor Q13 and the resistor R14 .
電源電圧VCCの値に応じて第３トランジスタ
Q13がオン・オフし、電源電圧VCCが所定レベル
以上のときは、Q13はオンとなつて、電圧検出信
号はＬレベル（GND）となり、一方、電源電圧
VCCが上記所定レベル以下のときは、Q13はオフ
となつて、電圧検出信号はＨレベル（VCCレベ
ル）となる。これにより、電源電圧の低下を検出
する。 The third transistor depending on the value of the power supply voltage V CC
When Q 13 turns on and off and the power supply voltage V CC is above the specified level, Q 13 turns on and the voltage detection signal becomes L level (GND), while the power supply voltage
When V CC is below the predetermined level, Q13 is turned off and the voltage detection signal becomes H level (V CC level). This detects a drop in the power supply voltage.
上記回路構成からなる、この種の電圧検出回路
は、次に説明するように、上記トランジスタQ13
のスイツチングする臨界点のベース・エミツタ間
の電圧VBEが負の温度係数をもち、一方、抵抗
R13の両端の電圧が正の温度係数をもつことを利
用して、両者の温度係数を相殺させ、所定の検出
電圧に対して温度係数をもたないように構成され
ている。 This type of voltage detection circuit consisting of the above circuit configuration has the above-mentioned transistor Q 13 as described below.
The base-emitter voltage V BE at the critical point of switching has a negative temperature coefficient, while the resistance
By utilizing the fact that the voltage across R 13 has a positive temperature coefficient, the temperature coefficients of both are canceled out, so that there is no temperature coefficient for a predetermined detected voltage.
まず、通常のシリコントランジスタ又はダイオ
ードにおける温度係数について説明する。シリコ
ントランジスタのベース・エミツタ間電圧VBE対
コレクタ電流IC又はシリコンダイオードの順方向
電圧VF対順方向電流IF（VBEとVF、ICとIFは夫々対
応する）の関係は次の式で表わされる。 First, the temperature coefficient of a typical silicon transistor or diode will be explained. The relationship between the base-emitter voltage V BE of a silicon transistor vs. collector current I C or the forward voltage V F vs. forward current I F of a silicon diode (V BE and V F , and I C and IF correspond to each other) is as follows: It is expressed by the following formula.
VBE＝（Ｋ・Ｔ／ｑ）・ln（IC／IO） IO∝T-1.4e-E/K V BE = (K・T/q)・ln(I C /I O ) I O ∝T -1.4 e -E/K
Claims (1)
オード接続された第１のトランジスタとの直列接
続回路と、上記ダイオード接続第１トランジスタ
のベース・コレクタ接続点にベースが接続された
第２のトランジスタ、該第２のトランジスタのコ
レクタと電源間に接続された第２の抵抗、及び上
記第２のトランジスタのエミツタと接地間に接続
された第３の抵抗と、上記第２のトランジスタの
コレクタにベースが接続されたエミツタ接地の第
３のトランジスタ及び該第３のトランジスタのコ
レクタと電源間に接続された第４の抵抗とから成
り、上記第３のトランジスタのコレクタを出力と
する電圧検出回路において、 上記第２の抵抗と第３の抵抗の何れか一方を、
上記各トランジスタと共に半導体基板内に集積さ
れた内蔵抵抗とし、他方を、上記内蔵抵抗と異な
る温度係数をもつ外付け抵抗とし、上記内蔵抵抗
及び外付け抵抗の値が、検出電圧の温度特性を打
ち消す値に設定されてなることを特徴とする電圧
検出回路。[Claims for Utility Model Registration] A series connection circuit of a first resistor and a diode-connected first transistor connected between a power supply and a ground, and a base-collector connection point of the diode-connected first transistor. a second transistor whose base is connected, a second resistor connected between the collector of the second transistor and a power supply, and a third resistor connected between the emitter of the second transistor and ground; a third transistor with a common emitter whose base is connected to the collector of the second transistor; and a fourth resistor connected between the collector of the third transistor and the power supply; In a voltage detection circuit that outputs either the second resistor or the third resistor,
A built-in resistor is integrated into the semiconductor substrate along with each of the above transistors, and the other is an external resistor having a temperature coefficient different from that of the built-in resistor, and the values of the built-in resistor and the external resistor cancel out the temperature characteristics of the detected voltage. A voltage detection circuit characterized in that the voltage detection circuit is set to a certain value.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1981065913U JPH056542Y2 (en) | 1981-05-06 | 1981-05-06 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1981065913U JPH056542Y2 (en) | 1981-05-06 | 1981-05-06 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57177177U JPS57177177U (en) | 1982-11-09 |
| JPH056542Y2 true JPH056542Y2 (en) | 1993-02-19 |
Family
ID=29861940
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1981065913U Expired - Lifetime JPH056542Y2 (en) | 1981-05-06 | 1981-05-06 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH056542Y2 (en) |
-
1981
- 1981-05-06 JP JP1981065913U patent/JPH056542Y2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57177177U (en) | 1982-11-09 |
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