JPH0564866B2 - - Google Patents
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- Publication number
- JPH0564866B2 JPH0564866B2 JP60299464A JP29946485A JPH0564866B2 JP H0564866 B2 JPH0564866 B2 JP H0564866B2 JP 60299464 A JP60299464 A JP 60299464A JP 29946485 A JP29946485 A JP 29946485A JP H0564866 B2 JPH0564866 B2 JP H0564866B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- amorphous semiconductor
- pressure
- insulating substrate
- axis
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 claims description 41
- 239000000758 substrate Substances 0.000 claims description 29
- 239000010409 thin film Substances 0.000 claims description 24
- 239000010408 film Substances 0.000 claims description 6
- 229910021417 amorphous silicon Inorganic materials 0.000 description 17
- 230000000694 effects Effects 0.000 description 11
- 229910052751 metal Inorganic materials 0.000 description 11
- 239000002184 metal Substances 0.000 description 11
- 238000000034 method Methods 0.000 description 11
- 238000000151 deposition Methods 0.000 description 9
- 239000013078 crystal Substances 0.000 description 7
- 230000008021 deposition Effects 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000002441 X-ray diffraction Methods 0.000 description 4
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 4
- 238000001259 photo etching Methods 0.000 description 4
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 4
- 230000035945 sensitivity Effects 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000004043 dyeing Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- 229910007264 Si2H6 Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000004744 fabric Substances 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 2
- 229910052753 mercury Inorganic materials 0.000 description 2
- 230000035882 stress Effects 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229920001646 UPILEX Polymers 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000009530 blood pressure measurement Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 229910001120 nichrome Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000002128 reflection high energy electron diffraction Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Landscapes
- Pressure Sensors (AREA)
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、真空システム、油圧システム、エン
ジンシステム等における圧力計測をはじめ、各種
重量計の検出部、あるいは、ロボツトの手に当た
る部分に装着させ、触覚センサとして構成できる
圧力センサに関し、特に、被測定圧の面状分布を
はじめ、物体の圧力センサとの接触の有無を判別
するシステムと組み合わせ形状認識システムを構
成できる二次元の面状に配列されたアレイ状の圧
力センサに関する。[Detailed Description of the Invention] [Field of Industrial Application] The present invention is applicable to pressure measurement in vacuum systems, hydraulic systems, engine systems, etc., as well as to the detection section of various weight scales, or to the part that corresponds to the hand of a robot. Regarding pressure sensors that can be configured as tactile sensors, in particular, they are arranged in a two-dimensional planar shape that can be combined with a system that determines whether or not an object is in contact with the pressure sensor, including the planar distribution of the measured pressure to configure a shape recognition system. The present invention relates to an arrayed pressure sensor.
従来の圧力センサは、圧力を片持染やダイヤフ
ラムの歪として捉え、その歪の変化量を歪ゲージ
により測定している。以下、その代表例について
説明する。
Conventional pressure sensors capture pressure as cantilever dyeing or diaphragm strain, and measure the amount of change in strain using a strain gauge. Representative examples thereof will be explained below.
(1) 金属歪ゲージを用いた圧力センサ
圧力により、片持染やダイヤフラム上に発生
した歪を、該片持染やダイヤフラム上に装着し
た金属歪ゲージで測定する。すなわち、この金
属歪ゲージは、断面積の小さい細長い線又はホ
イルの伸び縮みを電気抵抗変化に対応させ、加
えられた圧力を測定するものであるが、該金属
歪ゲージを片持染やダイヤフラムに装着するた
め、その接着剤によりクリープ現象やヒステリ
シスが発生する。また、金属歪ゲージのゲージ
率は２程度と感度が低い。(1) Pressure sensor using a metal strain gauge The strain generated on the cantilever stain or diaphragm due to pressure is measured with a metal strain gauge mounted on the cantilever stain or diaphragm. In other words, this metal strain gauge measures the applied pressure by making the expansion and contraction of a long thin wire or foil with a small cross-sectional area correspond to changes in electrical resistance. Since it is attached, creep phenomenon and hysteresis occur due to the adhesive. Furthermore, the sensitivity of metal strain gauges is low, with a gauge factor of about 2.
(2) 半導体ゲージを用いた圧力センサ
シリコン結晶で作られたダイヤフラム表面に
不純物を拡散して歪ゲージを形成し、熱応力の
少ない支持台に接合した圧力センサであつて、
加えられた圧力により該ダイヤフラムが変化す
ると、ピエゾ抵抗効果でゲージの電気抵抗が著
しく変化し、その変化量により圧力が測定でき
るものである。このように形成された圧力セン
サはゲージ率が100程度と高く感度的に優れて
いる（特開昭54−98584号公報、特開昭55−
125676号公報、特開昭56−133877号公報）。(2) Pressure sensor using semiconductor gauge This is a pressure sensor in which a strain gauge is formed by diffusing impurities on the surface of a diaphragm made of silicon crystal, and is bonded to a support with little thermal stress.
When the diaphragm changes due to the applied pressure, the electrical resistance of the gauge changes significantly due to the piezoresistive effect, and the pressure can be measured from the amount of change. The pressure sensor formed in this way has a high gauge factor of about 100 and is excellent in sensitivity (Japanese Patent Application Laid-Open Nos. 54-98584, 1983-
125676, Japanese Patent Application Laid-open No. 133877/1983).
しかし、次の問題があつた。ゲージ率の直線
性のバラツキが数％程度あり、温度依存性が大
きいので、高精度のセンサを構成する上では複
雑な補償回路を必要とした。また、不純物の拡
散等の複雑なウエハープロセスが必要であつ
た。さらに、該ダイヤフラムにSi結晶板を用い
ているので、機械的に弱かつた。 However, the following problem arose. Since the linearity of the gauge factor varies by several percent and has a large temperature dependence, a complex compensation circuit is required to construct a highly accurate sensor. Further, complicated wafer processes such as diffusion of impurities were required. Furthermore, since the diaphragm uses a Si crystal plate, it is mechanically weak.
(3) アモルフアス半導体歪ゲージ
ダイヤフラムや片持染にプラズマCVD法に
よりアモルフアスシリコン薄膜を堆積し、パタ
ーニング技術を利用して歪ゲージを形成する圧
力センサであつて、圧力により該ダイヤフラム
や片持染が変形すると前述した半導体ゲージを
用いた圧力センサと同じく、ピエゾ抵抗効果に
よりゲージの電気抵抗が変化し、その変化量に
より加えられた圧力が測定できるものである。
このように形成された圧力センサは、アモルフ
アスシリコンのゲージ率が30程度と結晶シリコ
ンに比べ低い。しかし、直線性に優れている
（同一出願人等による特公昭64−10109号公報）。(3) Amorphous semiconductor strain gauge This is a pressure sensor that forms a strain gauge by depositing an amorphous silicon thin film on a diaphragm or cantilever dyeing by plasma CVD method and using patterning technology. When the gauge is deformed, the electrical resistance of the gauge changes due to the piezoresistance effect, similar to the pressure sensor using the semiconductor gauge described above, and the applied pressure can be measured based on the amount of change.
In the pressure sensor formed in this way, the gauge factor of amorphous silicon is about 30, which is lower than that of crystalline silicon. However, it has excellent linearity (Japanese Patent Publication No. Sho 64-10109 by the same applicant).
以上述べた従来技術に共通する問題点を整理す
ると、次のことがいえる。 The problems common to the conventional techniques described above can be summarized as follows.
(1) ダイヤフラムや片持染等の歪ゲージの基板と
なる物体自体の構造を、加えられる圧力により
歪が効率良く発生するよう設計する必要がある
(2) また、ロボツト用触覚センサ、面状に多数個
並べた形状認識システム用タツチセンサ等とし
て構成する場合、構造的にセンサ全体が大きく
なり、製造プロセスが煩雑となつて実用的でな
かつた。(1) It is necessary to design the structure of the object itself, which serves as a substrate for strain gauges such as diaphragms and cantilever dyeing, so that strain can be generated efficiently by applied pressure. (2) In addition, tactile sensors for robots, surface When configured as a touch sensor for a shape recognition system in which a large number of sensors are arranged, the entire sensor becomes structurally large and the manufacturing process becomes complicated, making it impractical.
従来技術の問題点を列記すると以下のようにな
る。
The problems of the prior art are listed as follows.
(1) シリコンやゲルマニウム等の半導体結晶で
は、（111）面、（110）面に垂直方向の＜111＞
軸方向、＜110＞軸方向の応力に対するゲージ率
は、100から200程度と、他の軸方向（例えば、
＜100＞軸方向では10以下）に比べて非常に高
い。しかし、従来の＜110＞等の軸方向は、受
圧面と平行となつている（特開昭54−98584号
公報、特開昭55−125676号公報、特開昭56−
133877号公報、特公昭64−10109号公報）。(1) In semiconductor crystals such as silicon and germanium, <111> in the direction perpendicular to the (111) plane and (110) plane
The gauge factor for stress in the <110> axial direction is about 100 to 200, and in other axial directions (e.g.
<100> In the axial direction, it is very high compared to 10 or less). However, the axial direction of conventional <110> etc. is parallel to the pressure receiving surface (JP-A-54-98584, JP-A-55-125676, JP-A-56-
Publication No. 133877, Special Publication No. 10109 (Sho 64-10109)).
つまり、圧力が受圧面に加わり、素子が伸
び、歪が間接的に＜110＞等の軸方向に加わる
こととなり、本来、軸方向の有する高ゼージ率
を生かすことができなかつた。 In other words, pressure is applied to the pressure-receiving surface, the element stretches, and strain is indirectly applied in the axial direction such as <110>, making it impossible to take advantage of the originally high Zage rate in the axial direction.
(2) 圧力センサを面状に多数個配列した構造のも
のを構成することが困難である。(2) It is difficult to construct a structure in which a large number of pressure sensors are arranged in a planar manner.
(3) 接着によるクリープ現象やヒステリシスが発
生する。(3) Creep phenomenon and hysteresis occur due to adhesion.
(4) 半導体ゲージの場合、ゲージ率の直線性が悪
い。(4) In the case of semiconductor gauges, the linearity of the gauge factor is poor.
(5) 金属歪ゲージの場合、ゲージ率が小さい。(5) In the case of metal strain gauges, the gauge factor is small.
(6) 歪を効率良く発生させるため、基板の構造が
複雑になる。(6) In order to generate strain efficiently, the structure of the substrate becomes complicated.
本発明は、以上の問題点を解決することを目的
とする。 The present invention aims to solve the above problems.
第１図は、プラズマCVD法で堆積されたアモ
ルフアスシリコンと、微結晶相を含むアモルフア
スシリコンの両者についてのＸ線回折データを示
す。図において、ａはアモルフアスシリコンを、
ｂは微結晶相を含むアモルフアスシリコンを示
す。なお、横軸はＸ線回折角度を示し、縦軸は角
度（2θ）ごとの計数量を示す。第１図に表示する
ように微結晶相を含むアモルフアスシリコンの回
折パターンでは、シリコン結晶の（111）面、
（110）面及び（311）面に対応する位置に各回折
ピークが得られている。又、これらの面に対応す
る回折ピークは表面にほぼ平行に面が配向してい
ることを示す。このことにより、微結晶相を含む
アモルフアスシリコンにおいては、（111）面、
（110）面及び（311）面は、ほぼ表面に平行に配
向していることがわかる。
FIG. 1 shows X-ray diffraction data for both amorphous silicon deposited by plasma CVD and amorphous silicon containing a microcrystalline phase. In the figure, a is amorphous silicon,
b indicates amorphous silicon containing a microcrystalline phase. Note that the horizontal axis indicates the X-ray diffraction angle, and the vertical axis indicates the count amount for each angle (2θ). As shown in Figure 1, the diffraction pattern of amorphous silicon containing a microcrystalline phase shows the (111) plane of the silicon crystal,
Diffraction peaks are obtained at positions corresponding to the (110) and (311) planes. Moreover, the diffraction peaks corresponding to these planes indicate that the planes are oriented approximately parallel to the surface. As a result, in amorphous silicon containing a microcrystalline phase, the (111) plane,
It can be seen that the (110) plane and (311) plane are oriented almost parallel to the surface.
第２図は、アモルフアスシリコンおよび、微結
晶相を含むアモルフアスシリコンに関して表面に
垂直に重さを加えたときのピエゾ抵抗効果による
抵抗値を示す。図において、ａはアモルフアスシ
リコンの抵抗値変化を、ｂは微結晶相を含むアモ
ルフアスシリコンの抵抗値変化を示す。 FIG. 2 shows the resistance value due to the piezoresistance effect when weight is applied perpendicularly to the surface of amorphous silicon and amorphous silicon containing a microcrystalline phase. In the figure, a indicates a change in resistance value of amorphous silicon, and b indicates a change in resistance value of amorphous silicon containing a microcrystalline phase.
本発明は、かかるピエゾ抵抗効果による抵抗値
変化の現象を利用し、かつ、（111）面、（110）面
に垂直方向の＜111＞軸方向、＜110＞軸方向の応
力に対するゲージ率が他の軸方向に比べて非常に
高いことを、直接的に有効に利用した圧力センサ
を構成した。 The present invention utilizes the phenomenon of resistance value change due to the piezoresistance effect, and the gauge factor for stress in the <111> and <110> axial directions perpendicular to the (111) and (110) planes is We constructed a pressure sensor that directly and effectively utilizes the fact that it is extremely high compared to other axial directions.
すなわち、剛性を有する絶縁性基板の上表面上
に下部電極を形成し、該下部電極の上表面上に
（111）面及び（110）面が表面にほぼ平行となる
ような微結晶相を含むアモルフアス半導体を形成
し、さらに、該微結晶相を含むアモルフアス半導
体の上表面上に絶縁性基板とともに該アモルフア
ス半導体薄膜の厚さ方向に圧力を受ける受圧面を
有する上部電極を形成する。そして、かかる構成
とした圧力センサに、該上部電極を介して、該絶
縁性基板に対し垂直な圧力を外部から加えること
により、該微結晶相を含むアモルフアス半導体に
（111）面および（110）面の有する大きなピエゾ
抵抗効果を発生させ、その抵抗値変化量を計測し
て圧力の測定を行うものである。 That is, a lower electrode is formed on the upper surface of a rigid insulating substrate, and the lower electrode includes a microcrystalline phase in which the (111) plane and the (110) plane are substantially parallel to the surface. An amorphous semiconductor is formed, and an upper electrode having a pressure-receiving surface that receives pressure in the thickness direction of the amorphous semiconductor thin film is further formed on the upper surface of the amorphous semiconductor including a microcrystalline phase together with an insulating substrate. Then, by externally applying pressure perpendicular to the insulating substrate to the pressure sensor configured as described above through the upper electrode, the amorphous semiconductor containing the microcrystalline phase is exposed to the (111) plane and (110) plane. The pressure is measured by generating a large piezoresistance effect on the surface and measuring the amount of change in resistance value.
シリコン・ゲルマニウム等の半導体結晶におい
て、ピエゾ抵抗効果のゲージ率が＜111＞軸方向
と＜110＞軸方向で100から200と他の軸方向（＜
100＞軸では10以下に比べて非常に高いという事
実と、プラズマCVD法により堆積した微結晶相
を含むアモルフアス半導体において、微結晶相の
中で上記したピエゾ抵抗効果の高い＜111＞軸と
＜110＞軸が表面とほぼ垂直に形成される事実を
有効に利用して、従来技術は、絶縁性基板に対し
て平行な歪を加えていたのに対し、本発明では、
絶縁性基板に対し垂直な歪を加える方法を用い
た。この方法を用いたことにより、従来技術のア
モルフアス半導体歪ゲージに比べ高感度な圧力セ
ンサをを構成できた。
In semiconductor crystals such as silicon and germanium, the gauge factor of the piezoresistance effect is from 100 to 200 in the <111> and <110> axis directions, and in the other axis directions (<
The fact that the 100> axis is much higher than 10 or less, and in amorphous semiconductors containing a microcrystalline phase deposited by plasma CVD, the <111> axis and the 110＞By effectively utilizing the fact that the axis is formed almost perpendicular to the surface, the conventional technology applies parallel strain to the insulating substrate, but in the present invention,
We used a method that applies perpendicular strain to an insulating substrate. By using this method, we were able to construct a pressure sensor with higher sensitivity than the conventional amorphous semiconductor strain gauge.
また、この絶縁性基板に対して垂直な方向の歪
を検出する方式を採用したので、センサの絶縁性
基板に生じた歪を効率良く発生させる如き複雑な
構造とする必要がなくなり、センサ自体の構造を
非常に簡単、かつ、小型化できた。そのため、本
発明による小型化された圧力センサを二次元の面
状に多数個配列することにより、タツチセンサ等
の二次元センサとして構成できた。 In addition, since we have adopted a method that detects strain in the direction perpendicular to this insulating substrate, there is no need for a complicated structure that efficiently generates the strain that occurs in the sensor's insulating substrate. The structure was extremely simple and compact. Therefore, by arranging a large number of miniaturized pressure sensors according to the present invention in a two-dimensional plane, it is possible to construct a two-dimensional sensor such as a touch sensor.
第３図は、本発明による圧力センサの一実施例
の構成断面図を示す。図において、１は絶縁性基
板、２は下部電極、３は微結晶相を含むアモルフ
アス半導体、４は上部電極、５，５′はリード線
対、６は上部電極の上から加えられる圧力をそれ
ぞれ示す。第３図に示す構造をもつ圧力センサ
は、それ自体に加わる圧力を直接、微結晶相を含
むアモルフアス半導体内部の歪に変換できるた
め、従来の圧力センサに使用されているダイヤフ
ラムや片持染等の如き歪の発生のための構造体が
必要でなく、小型化が容易である。
FIG. 3 shows a cross-sectional view of the construction of an embodiment of the pressure sensor according to the present invention. In the figure, 1 is an insulating substrate, 2 is a lower electrode, 3 is an amorphous semiconductor containing a microcrystalline phase, 4 is an upper electrode, 5 and 5' are a pair of lead wires, and 6 is a pressure applied from above the upper electrode. show. A pressure sensor with the structure shown in Figure 3 can directly convert the pressure applied to itself into strain inside an amorphous semiconductor containing a microcrystalline phase. There is no need for a structure for generating distortion, and miniaturization is easy.
第４図および第５図は、本発明による複数個の
圧力センサを面状に並べたタツチセンサの一実施
例を示す。第４図は、該タツチセンサの平面図
を、また、第５図は第４図の線Ｘ−X′における
断面図をそれぞれ示す。図において、７は絶縁性
基板、８は下部電極群、９は下部電極上に並べら
れた微結晶相を含むアモルフアス半導体群の中の
任意のアモルフアス半導体の一つを、１０は上部
電極群、１１，１１′はリード線対群をそれぞれ
示す。この場合、上部電極群と下部電極群を、平
面上にマトリツクス状に交差させ、その交点に、
微結晶相を含むアモルフアス半導体薄膜層をサン
ドイツチ状に挟み込む構造とした。この構造にお
いては、任意の対となる上部電極と下部電極を指
定することにより面状に並んだ素子群の一つを指
定し、その指定された位置での圧力を測定できる
と同時に、配線が複雑になることを避けることが
できる。 FIGS. 4 and 5 show an embodiment of a touch sensor in which a plurality of pressure sensors according to the present invention are arranged in a plane. FIG. 4 shows a plan view of the touch sensor, and FIG. 5 shows a sectional view taken along line X--X' in FIG. 4. In the figure, 7 is an insulating substrate, 8 is a lower electrode group, 9 is an arbitrary amorphous semiconductor in the amorphous semiconductor group containing a microcrystalline phase arranged on the lower electrode, 10 is an upper electrode group, 11 and 11' indicate lead wire pairs, respectively. In this case, the upper electrode group and the lower electrode group are made to intersect in a matrix on a plane, and at the intersection,
The structure is such that amorphous semiconductor thin film layers containing a microcrystalline phase are sandwiched in a sandwich pattern. In this structure, by specifying an arbitrary pair of upper and lower electrodes, one of the elements arranged in a plane can be specified, and the pressure at that specified position can be measured. You can avoid complications.
第６図は、第４図及び第５図で明示したタツチ
センサを利用した形状認識システムの模式図を示
す。図において、１２はタツチセンサ、１３及び
１４はＸ軸走査回路とＹ軸走査回路、１５は定電
圧源、１６は電流計、１７はデータ処理システ
ム、１８はCRT出力装置、９はデータバス、２
０は被形状認識物体をそれぞれ示す。この形状認
識システムでは、該タツチセンサ１２上に被形状
認識物体２０を乗せると、該物体２０の下の素子
の抵抗値がピエゾ抵抗効果により変化し、それに
伴つて定電圧源１５から供給される電流値が変化
する。その電流値の変化を電流計１６で読みと
り、コンピユータでデータ処理を行うことによ
り、該素子上の物体が有るか否かの判断をなし、
義素子上の物体２０がある場合には出力装置１８
に信号を出力する。この作業をＸ軸走査回路１３
とＹ軸走査回路１４で面全体の交点を走査するこ
とにより、該タツチセンサ１２上に置かれた物体
の形状を認識することができる。 FIG. 6 shows a schematic diagram of a shape recognition system using the touch sensor shown in FIGS. 4 and 5. In the figure, 12 is a touch sensor, 13 and 14 are an X-axis scanning circuit and a Y-axis scanning circuit, 15 is a constant voltage source, 16 is an ammeter, 17 is a data processing system, 18 is a CRT output device, 9 is a data bus, 2
0 indicates the shape-recognized object. In this shape recognition system, when an object 20 to be shape recognized is placed on the touch sensor 12, the resistance value of the element under the object 20 changes due to the piezoresistance effect, and accordingly, the current supplied from the constant voltage source 15 changes. The value changes. By reading the change in the current value with an ammeter 16 and processing the data with a computer, it is determined whether or not there is an object on the element,
If there is an object 20 on the positive element, the output device 18
Outputs a signal to. This work is carried out by the X-axis scanning circuit 13.
By scanning the intersection of the entire surface with the Y-axis scanning circuit 14, the shape of the object placed on the touch sensor 12 can be recognized.
圧力センサの製造方法を第３図を参照して説明
する。
A method of manufacturing a pressure sensor will be explained with reference to FIG.
剛性を有する絶縁性基板１の材料としては、耐
熱性がある絶縁体や、同様の性質を有する導体板
もしくは半導体板の表面をSiO2薄膜、Si3N4薄
膜、Al2O3薄膜あるいはこれらの多層膜で覆つた
ものが望ましく、例えばガラス板、石英板、耐熱
性ポリミドフイルム、金属板や半導体の表面を絶
縁膜（例えば、SiO2膜、Si3N4薄膜、Al2O3薄膜）
で覆つたもの等が用いられる。ポリミドフイルム
を用いた場合は、剛性を有するためにガラス基板
等の上に形成した。 The material for the rigid insulating substrate 1 is a heat-resistant insulator, or the surface of a conductor plate or semiconductor plate with similar properties is coated with a SiO 2 thin film, a Si 3 N 4 thin film, an Al 2 O 3 thin film, or a thin film of any of these. For example, a glass plate, a quartz plate, a heat-resistant polyimide film, a metal plate, or a semiconductor whose surface is covered with an insulating film (e.g., SiO 2 film, Si 3 N 4 thin film, Al 2 O 3 thin film) is preferable.
A cloth covered with a cloth is used. When a polymide film was used, it was formed on a glass substrate or the like in order to have rigidity.
そして、かかる材料で作つた絶縁性基板１を有
機溶剤等により十分洗浄し乾燥させた後、真空蒸
着法を用いて下部電極２のための金属薄膜（例え
ばNiCr500Å／Au1000Å）を該絶縁性基板１の
上表面上に堆積させ、フオトエツチング技術を用
いて不要部分を除去して下部電極２を形成する。 After thoroughly cleaning and drying the insulating substrate 1 made of such a material with an organic solvent or the like, a thin metal film (for example, NiCr 500 Å/Au 1000 Å) for the lower electrode 2 is applied to the insulating substrate 1 using a vacuum evaporation method. The lower electrode 2 is formed by depositing it on the upper surface of the electrode 2 and removing unnecessary portions using a photo-etching technique.
次に、プラズマCVD法を用いて微結晶相を含
むアモルフアス半導体を形成する。アモルフアス
半導体に、ｐ型アモルフアスシリコンを用いた場
合の堆積条件の一例は、堆積圧力0.1〜10torr、
放電パワー密度0.1〜10W／cm2、堆積温度200〜
600℃、電極間隔10〜30cm、H2／SiH4＝10〜100、
B2H6／SiH4＝100〜1500ppmである。 Next, an amorphous semiconductor containing a microcrystalline phase is formed using a plasma CVD method. An example of deposition conditions when p-type amorphous silicon is used as an amorphous semiconductor is a deposition pressure of 0.1 to 10 torr,
Discharge power density 0.1~10W/ cm2 , deposition temperature 200~
600℃, electrode spacing 10~30cm, H2 / SiH4 =10~100,
B 2 H 6 /SiH 4 =100 to 1500 ppm.
この条件で堆積されたアモルフアスシリコン
は、微結晶相が形成され、該アモルフアスシリコ
ン薄膜表面にほぼ平行に（111）面及び、（110）
面が形成される。ここで、（111）面と（110）面
の結晶配向の強さの割合はB2H6／SiH4＝
1500ppm程度以上では（110）面が強く配向し、
それ以下では（111）面が強く表面に平行に配向
する。このような方法で作れらたアモルフアス半
導体の微結晶相は50〜1000Å程度の粒径サイズを
もつ。 In the amorphous silicon deposited under these conditions, a microcrystalline phase is formed, and a (111) plane and a (110) plane are formed almost parallel to the surface of the amorphous silicon thin film.
A surface is formed. Here, the ratio of the crystal orientation strength of the (111) plane and the (110) plane is B 2 H 6 /SiH 4 =
Above about 1500 ppm, the (110) plane is strongly oriented,
Below that, the (111) plane is strongly oriented parallel to the surface. The microcrystalline phase of the amorphous semiconductor produced by this method has a grain size of about 50 to 1000 Å.
また、光CVD法で堆積された微結晶相を含む
アモルフアス半導体でも、プラズマCVD法で堆
積した微結晶相を含むアモルフアス半導体と同様
に、表面に対してほぼ平行に（111）面、（110）
面が微結晶内部に形成される。 In addition, even in an amorphous amorphous semiconductor containing a microcrystalline phase deposited by photo-CVD, the (111) plane and (110)
Faces are formed inside the microcrystal.
光CVD法による微結晶相を含むｐ型アモルフ
アスシリコンの堆積条件の一例を次に示す。光源
としては低圧水銀ランプを使用し、その発行輝線
波長は1849Åと2537Åである。水銀ランプのパワ
ー密度は最大1W／cm2、堆積温度150〜300℃、堆
積圧力0.1〜10torr、基板の光源からの距離１〜
３cm、H2／Si2H6＝50〜500、B2H6／Si2H6＝100
〜50000ppmである。この方法で堆積された微結
晶相を含むアモルフアスシリコン薄膜内部の結晶
配向性はＸ線回折パターン及びRHEEDパターン
により、表面に対して（111）面及び（110）面が
強く配向していることを確認している。 An example of conditions for depositing p-type amorphous silicon containing a microcrystalline phase by the optical CVD method is shown below. A low-pressure mercury lamp is used as a light source, and its emission line wavelengths are 1849 Å and 2537 Å. The maximum power density of the mercury lamp is 1 W/cm 2 , the deposition temperature is 150-300℃, the deposition pressure is 0.1-10 torr, and the distance from the light source to the substrate is 1-
3cm, H2 / Si2H6 =50 ~ 500 , B2H6 / Si2H6 =100
~50000ppm. The crystal orientation inside the amorphous silicon thin film containing the microcrystalline phase deposited by this method is determined by the X-ray diffraction pattern and RHEED pattern, which shows that the (111) and (110) planes are strongly oriented with respect to the surface. has been confirmed.
以上のような方法で堆積した微結晶相を含むア
モルフアス半導体を、フオトエツチング技術を用
いて不要部分を除去し、アモルフアス素子部３を
形成する。つづいて、真空蒸着法を用いて、上部
電極４のための金属薄膜（例えばNiCr500Å／
Au1000Å）を堆積し、フオトエツチング技術を
用いて不要部分を除去し、上部電極４を形成す
る。 Unnecessary portions of the amorphous semiconductor containing the microcrystalline phase deposited by the method described above are removed using a photoetching technique to form the amorphous element portion 3. Next, a metal thin film (for example, NiCr500Å/
An upper electrode 4 is formed by depositing Au (1000 Å) and removing unnecessary portions using photoetching technology.
最後に、上部電極４及び下部電極２にリード線
対５，５′用金線又はアルミニウム線をつけて完
成する。 Finally, gold wire or aluminum wire for the lead wire pair 5, 5' is attached to the upper electrode 4 and the lower electrode 2 to complete the process.
以上の製造方法では、電極形成、及び微結晶相
を含むアモルフアス半導体形成に、フオトエツチ
ング技術を用いたが、メタルマスクを用いた方法
でも形成できる。この場合は、下部電極を形成す
る持に不要部分をメタルマスクでカバーし、微結
晶相を含むアモルフアス半導体をその上に一面に
堆積させ、上部電極の形成時も不要部分をメタル
マスクでカバーし、その後、上部電極をアモルフ
アス半導体のレジスト膜として、ウエツトエツチ
ング法、あるいはドライエツチング法でアモルフ
アス半導体の不要部分を除去してパターンを形成
する。 In the above manufacturing method, photo-etching technology was used to form electrodes and to form an amorphous semiconductor containing a microcrystalline phase, but formation can also be performed by a method using a metal mask. In this case, when forming the lower electrode, the unnecessary parts are covered with a metal mask, and an amorphous semiconductor containing a microcrystalline phase is deposited over the entire surface, and when forming the upper electrode, the unnecessary parts are also covered with a metal mask. Thereafter, using a resist film of an amorphous semiconductor as the upper electrode, unnecessary portions of the amorphous semiconductor are removed by wet etching or dry etching to form a pattern.
〔発明の効果〕
本発明による圧力センサは、従来の圧力センサ
に比べて、下記のような幾多の利点を有する。[Effects of the Invention] The pressure sensor according to the present invention has many advantages over conventional pressure sensors as described below.
(i) ゲージ率の高い＜111＞軸及び＜110＞軸のピ
エゾ抵抗効果を主に使い、基板に対して垂直方
向の歪を加えるため、ゲージ率で100程度と感
度が高い。(i) It mainly uses the piezoresistance effect of the <111> and <110> axes, which have high gauge factors, and applies strain in the vertical direction to the substrate, so it has high sensitivity with a gauge factor of about 100.
(ii) 圧力に対する出力の直線性が良い。(ii) Good linearity of output with respect to pressure.
(iii) 基板に対して垂直方向の歪を検出するため、
センサの構造が簡単になり、製造プロセスが容
易である。(iii) To detect strain in the direction perpendicular to the substrate,
The structure of the sensor is simplified and the manufacturing process is easy.
(iv) 基板に対して垂直方向の歪を直接、基板に加
えるため、ダイヤフラム等の歪の発生のための
構造体が必要でなく、小型化できる。(iv) Since strain in the vertical direction is directly applied to the substrate, a structure for generating strain such as a diaphragm is not required, and the size can be reduced.
(v) 小型化が実現できるため、複数個の圧力セン
サを面状に並べ組み合わせた構造のタツチセン
サを容易に構成できる。(v) Since miniaturization can be achieved, a touch sensor having a structure in which a plurality of pressure sensors are arranged and combined in a planar manner can be easily constructed.
(vi) タツチセンサを検出部に用いることにより簡
便な形状認識システムを構成できる。(vi) A simple shape recognition system can be constructed by using a touch sensor as the detection section.
(vii) タツチセンサは、歪的に各々独立した複数個
の圧力センサから構成されるため、形状認識の
確度がよい。(vii) Since the touch sensor is composed of a plurality of strain-wise independent pressure sensors, shape recognition accuracy is high.
第１図は、アモルフアス半導体および微結晶相
を含むアモルフアス半導体の表面に対するＸ線回
折パターンを示す。第２図は、アモルフアス半導
体および微結晶相を含むアモルフアス半導体の基
板に対して垂直方向の圧力を加えた場合のピエゾ
抵抗効果による抵抗値変化を示す。第３図は本発
明による圧力センサの一実施例の構成断面図を示
す。第４図および第５図は本発明による複数個の
圧力センサを面状に並べたタツチセンサの一実施
例を示し、第４図は平面図、第５図は第４図の線
Ｘ−X′で切断した断面図を示す。第６図は、第
４図および第５図で明示したタツチセンサを利用
した形状認識システムの模式図を示す。図におい
て、１，７は絶縁性基板、２，８は下部電極と下
部電極群、３，９は微結晶相を含むアモルフアス
半導体、４，１０は上部電極と上部電極群、５，
５′，１１，１１′はリード線対とリード線対群、
１２はタツチセンサ、１３，１４はＸ軸走査回路
とＹ軸走査回路、１５は定電圧源、１６は電流
計、１７はデータ処理システム、１８はCRT出
力装置、１９はデータバス、２０は被形状認識物
体をそれぞれ示す。
FIG. 1 shows X-ray diffraction patterns for the surfaces of an amorphous semiconductor and an amorphous semiconductor containing a microcrystalline phase. FIG. 2 shows changes in resistance due to the piezoresistance effect when vertical pressure is applied to substrates of amorphous semiconductors and amorphous semiconductors containing a microcrystalline phase. FIG. 3 shows a cross-sectional view of an embodiment of the pressure sensor according to the present invention. 4 and 5 show an embodiment of a touch sensor in which a plurality of pressure sensors according to the present invention are arranged in a plane, FIG. 4 is a plan view, and FIG. 5 is a line X-X' in FIG. 4. A cross-sectional view taken at is shown. FIG. 6 shows a schematic diagram of a shape recognition system using the touch sensor shown in FIGS. 4 and 5. In the figure, 1 and 7 are insulating substrates, 2 and 8 are lower electrodes and lower electrode groups, 3 and 9 are amorphous semiconductors containing a microcrystalline phase, 4 and 10 are upper electrodes and upper electrode groups, 5,
5', 11, 11' are lead wire pairs and lead wire pair groups;
12 is a touch sensor, 13 and 14 are an X-axis scanning circuit and a Y-axis scanning circuit, 15 is a constant voltage source, 16 is an ammeter, 17 is a data processing system, 18 is a CRT output device, 19 is a data bus, and 20 is a shaped object Each recognition object is shown.
Claims (1)
の上表面上に薄膜状に形成した下部電極２と、該
下部電極の上表面上に形成した＜111＞軸又は＜
110＞軸が絶縁性基板の上表面と実質的に垂直と
なるような微結晶相を含むアモルフアス半導体薄
膜３と、該アモルフアス半導体薄膜の上表面上に
薄膜状に形成され前記剛性を有する絶縁性基板と
ともに該アモルフアス半導体薄膜の厚さ方向に圧
力を受ける受圧面を有する上部電極４とを備え、
該アモルフアス半導体薄膜に作用する前記＜111
＞軸又は＜110＞軸方向の力の成分を前記上部電
極及び下部電極間の抵抗値の変化として検出する
ことを特徴とする圧力センサ。 ２ 剛性を有する絶縁性基板１と、該絶縁性基板
の上表面上に薄膜状に形成された複数個の下部電
極５と、該複数個の下部電極のそれぞれの上表面
上に形成された＜111＞軸又は＜110＞軸が該絶縁
性基板の上表面と実質的に垂直となるような微結
晶相を含む複数個のアモルフアス半導体薄膜６
と、該複数個のアモルフアス半導体薄膜の上表面
上にそれぞれ薄膜状に形成され前記剛性を有する
絶縁性基板とともに該アモルフアス半導体薄膜の
厚さ方向に圧力を受ける受圧面を有する複数個の
上部電極７とを備え、前記＜111＞軸又は＜110＞
軸方向の力の成分が印加されている前記アモルフ
アス半導体薄膜の位置を前記複数個の上部電極及
び下部電極間の抵抗値の変化によつて検出するこ
とを特徴とする圧力センサ。[Claims] 1. An insulating substrate 1 having rigidity, a lower electrode 2 formed in the form of a thin film on the upper surface of the insulating substrate, and a <111> axis or <
110> An amorphous semiconductor thin film 3 containing a microcrystalline phase whose axis is substantially perpendicular to the upper surface of an insulating substrate, and an insulating film having the rigidity formed in a thin film form on the upper surface of the amorphous semiconductor thin film. an upper electrode 4 having a pressure-receiving surface that receives pressure in the thickness direction of the amorphous semiconductor thin film together with the substrate;
<111 acting on the amorphous semiconductor thin film
A pressure sensor characterized in that a force component in the direction of the > axis or the <110> axis is detected as a change in resistance value between the upper electrode and the lower electrode. 2. An insulating substrate 1 having rigidity, a plurality of lower electrodes 5 formed in the form of a thin film on the upper surface of the insulating substrate, and < formed on the upper surface of each of the plurality of lower electrodes. A plurality of amorphous semiconductor thin films 6 containing a microcrystalline phase such that the 111> axis or the <110> axis is substantially perpendicular to the upper surface of the insulating substrate.
and a plurality of upper electrodes 7 each formed in the form of a thin film on the upper surface of the plurality of amorphous semiconductor thin films and having a pressure receiving surface that receives pressure in the thickness direction of the amorphous semiconductor thin film together with the rigid insulating substrate. and the <111> axis or <110>
A pressure sensor characterized in that a position of the amorphous semiconductor thin film to which an axial force component is applied is detected by a change in resistance value between the plurality of upper electrodes and lower electrodes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29946485A JPS62158367A (en) | 1985-12-28 | 1985-12-28 | Pressure sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29946485A JPS62158367A (en) | 1985-12-28 | 1985-12-28 | Pressure sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62158367A JPS62158367A (en) | 1987-07-14 |
| JPH0564866B2 true JPH0564866B2 (en) | 1993-09-16 |
Family
ID=17872909
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP29946485A Granted JPS62158367A (en) | 1985-12-28 | 1985-12-28 | Pressure sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62158367A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007067019A (en) * | 2005-08-29 | 2007-03-15 | Kyocera Corp | Circuit board, manufacturing method thereof, and electronic equipment |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5498584A (en) * | 1978-01-20 | 1979-08-03 | Yokogawa Hokushin Electric Corp | Semiconductor pressure converter |
| JPS55125676A (en) * | 1979-03-20 | 1980-09-27 | Fuji Electric Co Ltd | Pressure transducer |
| JPS56133877A (en) * | 1980-03-24 | 1981-10-20 | Hitachi Ltd | Semiconductor diaphragm type sensor |
| JPS6134981A (en) * | 1984-07-26 | 1986-02-19 | Sumitomo Electric Ind Ltd | Two-dimentional strain sensor |
| JPS6136978A (en) * | 1984-07-28 | 1986-02-21 | Sumitomo Electric Ind Ltd | Tactile and visual sensor |
-
1985
- 1985-12-28 JP JP29946485A patent/JPS62158367A/en active Granted
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5498584A (en) * | 1978-01-20 | 1979-08-03 | Yokogawa Hokushin Electric Corp | Semiconductor pressure converter |
| JPS55125676A (en) * | 1979-03-20 | 1980-09-27 | Fuji Electric Co Ltd | Pressure transducer |
| JPS56133877A (en) * | 1980-03-24 | 1981-10-20 | Hitachi Ltd | Semiconductor diaphragm type sensor |
| JPS6134981A (en) * | 1984-07-26 | 1986-02-19 | Sumitomo Electric Ind Ltd | Two-dimentional strain sensor |
| JPS6136978A (en) * | 1984-07-28 | 1986-02-21 | Sumitomo Electric Ind Ltd | Tactile and visual sensor |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62158367A (en) | 1987-07-14 |
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