JPH0563031B2 - - Google Patents
Info
- Publication number
- JPH0563031B2 JPH0563031B2 JP61265270A JP26527086A JPH0563031B2 JP H0563031 B2 JPH0563031 B2 JP H0563031B2 JP 61265270 A JP61265270 A JP 61265270A JP 26527086 A JP26527086 A JP 26527086A JP H0563031 B2 JPH0563031 B2 JP H0563031B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- electrode
- solar cell
- cell element
- antireflection film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000000758 substrate Substances 0.000 claims description 22
- 239000004065 semiconductor Substances 0.000 claims description 19
- 239000000463 material Substances 0.000 claims description 13
- 238000006243 chemical reaction Methods 0.000 claims description 10
- 238000010304 firing Methods 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 54
- 229910052709 silver Inorganic materials 0.000 description 15
- 239000004332 silver Substances 0.000 description 15
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 14
- 239000000853 adhesive Substances 0.000 description 8
- 230000001070 adhesive effect Effects 0.000 description 8
- 230000007423 decrease Effects 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910006404 SnO 2 Inorganic materials 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 3
- 229910001887 tin oxide Inorganic materials 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 150000003378 silver Chemical class 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Photovoltaic Devices (AREA)
Description
産業上の利用分野
本発明は、たとえば太陽電池素子のような公電
変換素子に関する。
従来技術
第６図は、従来技術の太陽電池素子１の構成を
示す断面図である。第６図を参照して、従来技術
の太陽電池素子１の構成について説明する。この
太陽電池素子１はＰ形シリコン基板２上にN+層
３を形成する。次にこのN+層３の表面に、たと
えば酸化チタン（TiO2）から成る反射防止膜４
を全面に亘つて形成する。
このように形成された反射防止膜４上の予め定
められる位置に電極５を形成するために、ガラス
フリツトを混合した銀ペーストを印刷し焼成する
と、この銀ペースト層は前記反射防止膜４を貫通
し、第６図示のように一端はN+層３と接触し、
他端は反射防止膜４を貫通した電極５が形成され
る。
発明が解決しようとする問題点
このような太陽電池素子１において、光電変換
効率を高めるためには、可及的に電極５とN+層
３との接触面積を低減する必要があることが知ら
れている。
またN+層３と電極５との接触面積が大きくな
るほど、これらの間の界面におけるキヤリアの再
結合速度が大きくなり、開放電圧（Voc）が充分
に得られないことになつてしまう。
そのために、電極５の接触面積を低減すると、
N+層３との接着強度が低下してしまう。したが
つて、この接着強度を確保するため、電極５の材
料となる上記銀ペースト中に、ガラスフリツトを
たとえば1.5％以上混合する必要がある。
一方、混合されるガラスフリツトの量が増大す
ること、電極５とN+層３との間の接触抵抗値が
大きくなり、太陽電池素子１の直列抵抗が増大し
てしまう。そのため太陽電池素子１の電気的品質
が低下してしまうという問題点があつた、
本発明の目的は上述の問題点を解決し、半導体
基板とこの半導体基板上に形成された電極との接
着強度が増大されるとともに、接触抵抗を低減し
て格段に品質を向上した光電変換素子を提供する
ことである。
問題点を解決するための手段
本発明は、受光面側に半導体基板を被覆して形
成された反射防止膜を備え、
受光面側電極として、
焼成により反射防止膜を貫通する材料から成
り、前記反射防止膜を貫通し反射基板上に達し、
受光面に点在状態で形成され、半導体基板との接
触抵抗が低い第１電極と、
第１電極を共通に接続し、半導体基板とは電気
的に絶縁されて反射防止膜上に形成され、焼成に
より反射防止膜を貫通することのない材料から成
り、反射防止膜とは高密着強度を有する第２電極
とを有して成ることを特徴とする光電変換素子で
ある。
作 用
本発明の光電変換素子は、半導体基板上に点在
状態に第１電極を形成しており、またこの半導体
基板は、反射防止膜によつて被覆される。この反
射防止膜は、第１電極によつて貫通されており、
第１電極の反射防止膜に関して半導体基板と反対
側端部付近は、第２電極に選択的に導通される。
この第２電極は、半導体基板とは電気的に絶縁さ
れて形成される。
すなわち、第１電極および第２電極の材料を適
切に選択することにより、第１電極は半導体基板
との接触面積を低減して接触抵抗を低下させるよ
うに構成することができる。一方、そのために接
着強度が低下するけれども、これは、反射防止膜
上に形成される第２電極に高接触強度である材料
を用いることによつて、第１電極の接着強度の低
下を補完することができる。
実施例
第１図は本発明の一実施例の光電変換素子であ
る太陽電池素子１１の平面図であり、第２図は第
１図の切断面線−から見た断面図であり、第
３図は第１図の切断線−から見た断面図であ
る。第１図〜第３図を参照して、本実施例の太陽
電池素子１１の構成について説明する。太陽電池
素子１１は、Ｐ形シリコン基板２の表面全体に亘
つてN+層１３が形成されている。このN+層１３
上に、たとえば２層構造（たとえば酸化チタン
（TiO2）から成る第１層１４、およびたとえば酸
化錫（SnO2）から成る第２層１５）の反射防止
膜１６が形成されている。
この反射防止膜１６を貫通して、第１図に示す
ように、たとえばマトリクス状に点在する第１電
極１７が形成される。第１電極１７のN+層１３
側の端部はN+層１３に接触し、他方側端部は反
射防止膜１６を貫通して、第２図上方に突出して
形成される。これらの第１電極１７を共通に接続
する第２電極１８が形成される。
第４図は第１図示の太陽電池素子１１を製造す
る工程を説明する断面図である。第１図〜第４図
を参照して、本実施例の太陽電池素子１１を製造
する工程について説明する。まず、第４図１に示
されるように、Ｐ形シリコン基板１２を準備し、
第４図２で示されるように、その一方側の全表面
に亘つてN+層１３を形成する。
このN+層１３の全表面に亘つて、上記２層構
造をなす反射防止膜１６を形成する。このとき、
上記第１層１４および第２層１５の順に形成す
る。
上記反射防止膜１６上に、第１図に示すたとえ
ばマトリツクス状に点在する態様に、第１銀ペー
スト層１９を印刷して形成する。このとき、この
第１銀ペースト層１９を構成する第１銀ペースト
の成分構成は、下記第１表のとおりである。
INDUSTRIAL APPLICATION FIELD The present invention relates to public electricity conversion elements such as solar cell elements. Prior Art FIG. 6 is a cross-sectional view showing the configuration of a solar cell element 1 of the prior art. With reference to FIG. 6, the configuration of a conventional solar cell element 1 will be described. This solar cell element 1 has an N + layer 3 formed on a P-type silicon substrate 2 . Next, an antireflection film 4 made of titanium oxide (TiO 2 ), for example, is applied to the surface of this N + layer 3.
is formed over the entire surface. In order to form electrodes 5 at predetermined positions on the antireflection film 4 formed in this way, a silver paste mixed with glass frit is printed and fired, and this silver paste layer penetrates the antireflection film 4. , one end is in contact with the N + layer 3 as shown in FIG.
At the other end, an electrode 5 penetrating the antireflection film 4 is formed. Problems to be Solved by the Invention It is known that in such a solar cell element 1, in order to increase the photoelectric conversion efficiency, it is necessary to reduce the contact area between the electrode 5 and the N + layer 3 as much as possible. It is being Furthermore, as the contact area between the N + layer 3 and the electrode 5 increases, the recombination speed of carriers at the interface between them increases, making it impossible to obtain a sufficient open circuit voltage (Voc). For this purpose, if the contact area of the electrode 5 is reduced,
The adhesive strength with the N + layer 3 will decrease. Therefore, in order to ensure this adhesive strength, it is necessary to mix, for example, 1.5% or more of glass frit into the silver paste that is the material of the electrode 5. On the other hand, as the amount of glass frit to be mixed increases, the contact resistance value between the electrode 5 and the N + layer 3 increases, and the series resistance of the solar cell element 1 increases. Therefore, there was a problem that the electrical quality of the solar cell element 1 deteriorated.An object of the present invention is to solve the above-mentioned problem and to improve the adhesive strength between the semiconductor substrate and the electrodes formed on the semiconductor substrate. It is an object of the present invention to provide a photoelectric conversion element which has significantly improved quality by increasing contact resistance and reducing contact resistance. Means for Solving the Problems The present invention includes an anti-reflection film formed by covering a semiconductor substrate on the light-receiving surface side, and the electrode on the light-receiving surface side is made of a material that penetrates the anti-reflection film by firing. Penetrates the anti-reflection film and reaches the reflective substrate.
first electrodes that are dotted on the light-receiving surface and have low contact resistance with the semiconductor substrate; It is a photoelectric conversion element characterized in that it is made of a material that does not penetrate through the anti-reflection film when fired, and that the anti-reflection film includes a second electrode having high adhesion strength. Function The photoelectric conversion element of the present invention has first electrodes formed in a dotted manner on a semiconductor substrate, and this semiconductor substrate is coated with an antireflection film. This anti-reflection film is penetrated by the first electrode,
The vicinity of the end of the antireflection film of the first electrode on the side opposite to the semiconductor substrate is selectively electrically connected to the second electrode.
This second electrode is formed to be electrically insulated from the semiconductor substrate. That is, by appropriately selecting the materials of the first electrode and the second electrode, the first electrode can be configured to reduce the contact area with the semiconductor substrate and reduce the contact resistance. On the other hand, this decreases the adhesive strength, but this can be compensated for by using a material with high contact strength for the second electrode formed on the anti-reflection film to compensate for the decrease in the adhesive strength of the first electrode. be able to. Embodiment FIG. 1 is a plan view of a solar cell element 11 which is a photoelectric conversion element according to an embodiment of the present invention, FIG. The figure is a sectional view taken along the cutting line - in FIG. 1. The configuration of the solar cell element 11 of this example will be explained with reference to FIGS. 1 to 3. In the solar cell element 11, an N + layer 13 is formed over the entire surface of a P-type silicon substrate 2. This N + layer 13
An antireflection film 16 having a two-layer structure (a first layer 14 made of, for example, titanium oxide (TiO 2 ), and a second layer 15 made of, for example, tin oxide (SnO 2 )) is formed thereon. As shown in FIG. 1, first electrodes 17 are formed to penetrate through this antireflection film 16 and are scattered, for example, in a matrix. N + layer 13 of first electrode 17
One end is in contact with the N + layer 13, and the other end is formed to penetrate the antireflection film 16 and protrude upward in FIG. A second electrode 18 is formed which connects these first electrodes 17 in common. FIG. 4 is a cross-sectional view illustrating the process of manufacturing the solar cell element 11 shown in FIG. The process of manufacturing the solar cell element 11 of this example will be described with reference to FIGS. 1 to 4. First, as shown in FIG. 4, a P-type silicon substrate 12 is prepared,
As shown in FIG. 4, an N + layer 13 is formed over the entire surface on one side. The antireflection film 16 having the two-layer structure is formed over the entire surface of the N + layer 13. At this time,
The first layer 14 and the second layer 15 are formed in this order. On the antireflection film 16, a first silver paste layer 19 is printed and formed, for example, in the form of a dotted matrix shown in FIG. At this time, the composition of the first silver paste constituting the first silver paste layer 19 is as shown in Table 1 below.
【表】
上記第１表におけるガラスフリツトは、酸化鉛
（PbO）、酸化亜鉛（ZnO）、酸化ホウ素（B2O3）
等を主成分とし、その転移点は600℃以下であり、
熱膨張係数は50×10-7／℃以下に選ばれる。
次に、これをたとえば800℃以上で焼成すると、
第１銀ペースト層１９に含まれるガラスフリツト
の作用によつて、上記第１層１４（TiO2）およ
び第２層１５（SnO2）を貫通して、N+層１３と
接触する。一方、第１電極１７のN+層１３と反
対側端部は、反射防止膜１６上に突出するように
形成される。
次に、この第１電極１７を共通に被覆する態様
（第１図参照）に、第２銀ペースト層２０を印刷
する。この第２銀ペースト層２０を形成する第２
銀ペーストの成分組成は、上記第１表に示すとお
りである。この後、これをたとえば700℃以下で
焼成する。このとき上記第１表のように、成分構
成が選ばれた第２銀ペーストは、第１銀ペースト
のように、反射防止膜１６を貫通することがない
ように選ばれている。すなわち、前記焼成工程に
より第２銀ペースト層２０は、第４図７に示す第
２電極１８として形成され、同時に反射防止膜１
６の第２層１５に固着する。
第５図は、第１図〜第３図示の本実施例の太陽
電池素子１１と第６図示の従来技術の太陽電池素
子１の電圧−電流特性を示すグラフである。第５
図ラインｌ１は、本実施例の太陽電池素子１１の
特性を表わし、ラインｌ２は太陽電池素子１の特
性を表わす。第５図に示すように従来技術に比べ
て、本実施例の太陽電池素子１１は、曲線因子が
大きく、またラインｌ２に示される開放電圧Ｖ１
よりも、ラインｌが示す本実施例の開放電圧Ｖ２
が大きくなつている。すなわち、太陽電池素子１
１の特性が１１の特性が格段に改善されたことが
理解される。
以上のように、本実施例に従えば、N+層１３
と直接接触する電極として第１電極１７をドツト
状に形成し、この第１電極１７とN+層１３との
接触面積を可及的に小さくするようにした。一
方、これに伴なう固着強度の低下は、反射防止膜
１６と緊密に固着される第２電極１８を、第１電
極１７が被覆される態様に形成することによつ
て、補完される。また上記第１電極１７とN+層
１３との接触面積の低下に伴ない、これらの界面
におけるキヤリア表面再結合速度を格段に低下さ
せることができ、接触抵抗を低くすることができ
る。したがつて、第５図に示すように、開放電圧
を大きくすることができる。
前述の実施例では、反射防止膜１６は酸化チタ
ン（TiO2）から成る第１層１４と、酸化錫
（SnO2）から成る第２層１５とから成る多層構造
として実現したけれども、その他に酸化錫
（SnO2）、酸化チタン（TiO2）、窒化シリコン
（Si3N4）、酸化シリコン（SiO）のいずれか１つ
から成る単層構造、または酸化錫（SnO2）／窒
化シリコン（SiO3N4）重層構造であるようにし
てもよい。また太陽電池素子１１の基本的構造と
して、Ｐ形シリコン基板１２およびN+層１３に
即して説明したけれども、その他にN+層／Ｐ形
半導体層、またはN+層／Ｐ形半導体層／P+層、
またはP+層／Ｎ形半導体層、またはP+層／Ｎ形
半導体層／N+層等の構成であつてもよい。
効 果
以上のように本発明に従えば、第１電極および
第２電極の材料を適切に選択することにより、第
１電極を半導体基板との接触面積を低減して接触
抵抗を低下させるとともに、これらの界面におけ
るキヤリアの再結合速度を低下させるように構成
することができる。一方、そのために接着強度が
低下するけれども、これは、反射防止膜上に形成
される第２電極に、高接着強度である材料を用い
ることによつて、第１電極の接着強度の低下を補
完することができる。このようにして光電変換効
率と耐久性に優れた光電変換素子が得られる。特
に本発明では、第１電極と第２電極とは異なる材
料であり、第２電極は、焼成によつて反射防止膜
を貫通しない材料から成ることが重要であり、こ
の第２電極は、反射防止膜とは高密着強度を有し
ており、第１電極は、半導体基板との接触抵抗が
低く、焼成によつて反射防止膜を貫通する材料か
ら成る。このような構成によつて、本発明では、
第１および第２電極が半導体基板と充分な接着強
度を有し、しかも簡単な製造方法で、製造するこ
とができ、半導体基板と第１電極との接触面積が
小さい光電変換素子を実現することができるとい
う優れた構成が達成される。
さらに第１電極は、材料を塗布し、焼成によつ
て反射防止膜を貫通するので、点在状態の電極を
極めて容易に形成することができるという優れた
効果もまた、達成される。[Table] The glass frit in Table 1 above contains lead oxide (PbO), zinc oxide (ZnO), and boron oxide (B 2 O 3 ).
etc., and its transition point is below 600℃,
The coefficient of thermal expansion is selected to be less than 50×10 -7 /°C. Next, if this is fired at, for example, 800℃ or higher,
Due to the action of the glass frit contained in the first silver paste layer 19, it penetrates the first layer 14 (TiO 2 ) and the second layer 15 (SnO 2 ) and comes into contact with the N + layer 13 . On the other hand, the end of the first electrode 17 opposite to the N + layer 13 is formed to protrude above the antireflection film 16 . Next, a second silver paste layer 20 is printed in a manner that commonly covers the first electrode 17 (see FIG. 1). The second layer forming this second silver paste layer 20
The composition of the silver paste is as shown in Table 1 above. Thereafter, this is fired at, for example, 700°C or lower. At this time, the second silver paste whose composition is selected as shown in Table 1 above is selected so that it will not penetrate the antireflection film 16 like the first silver paste. That is, through the baking process, the second silver paste layer 20 is formed as the second electrode 18 shown in FIG.
The second layer 15 of No. 6 is fixed. FIG. 5 is a graph showing voltage-current characteristics of the solar cell element 11 of this embodiment shown in FIGS. 1 to 3 and the conventional solar cell element 1 shown in FIG. 6. Fifth
A line l1 in the figure represents the characteristics of the solar cell element 11 of this example, and a line l2 represents the characteristics of the solar cell element 1. As shown in FIG. 5, compared to the prior art, the solar cell element 11 of this embodiment has a larger fill factor and an open circuit voltage V1 shown on line l2.
, the open circuit voltage V2 of this embodiment indicated by line l
is getting bigger. That is, solar cell element 1
It is understood that the characteristics of No. 1 and No. 11 were significantly improved. As described above, according to this embodiment, the N + layer 13
The first electrode 17 is formed in a dot shape as an electrode in direct contact with the N + layer 13, and the contact area between the first electrode 17 and the N + layer 13 is made as small as possible. On the other hand, the accompanying decrease in adhesion strength can be compensated for by forming the second electrode 18, which is tightly adhered to the antireflection film 16, in such a manner that the first electrode 17 is covered. Further, as the contact area between the first electrode 17 and the N + layer 13 is reduced, the carrier surface recombination rate at these interfaces can be significantly reduced, and the contact resistance can be reduced. Therefore, as shown in FIG. 5, the open circuit voltage can be increased. In the above embodiment, the antireflection film 16 was realized as a multilayer structure consisting of the first layer 14 made of titanium oxide (TiO 2 ) and the second layer 15 made of tin oxide (SnO 2 ). A single layer structure consisting of one of tin (SnO 2 ), titanium oxide (TiO 2 ), silicon nitride (Si 3 N 4 ), silicon oxide (SiO), or tin oxide (SnO 2 )/silicon nitride (SiO 3 N 4 ) It may have a multilayer structure. Furthermore, although the basic structure of the solar cell element 11 has been explained based on the P-type silicon substrate 12 and the N + layer 13, it may also include an N + layer/P-type semiconductor layer, or an N + layer/P-type semiconductor layer/ P + layer,
Alternatively, the structure may be P + layer/N type semiconductor layer, or P + layer/N type semiconductor layer/N + layer. Effects As described above, according to the present invention, by appropriately selecting the materials of the first electrode and the second electrode, the contact area of the first electrode with the semiconductor substrate is reduced, and the contact resistance is reduced. It can be configured to reduce the rate of carrier recombination at these interfaces. On the other hand, this decreases the adhesive strength, but this can be compensated for by using a material with high adhesive strength for the second electrode formed on the anti-reflection film to compensate for the decrease in the adhesive strength of the first electrode. can do. In this way, a photoelectric conversion element with excellent photoelectric conversion efficiency and durability can be obtained. In particular, in the present invention, the first electrode and the second electrode are made of different materials, and it is important that the second electrode is made of a material that does not penetrate the anti-reflection film by firing. The antireflection film has high adhesion strength, and the first electrode is made of a material that has low contact resistance with the semiconductor substrate and penetrates the antireflection film when fired. With such a configuration, in the present invention,
To realize a photoelectric conversion element in which first and second electrodes have sufficient adhesion strength to a semiconductor substrate, can be manufactured by a simple manufacturing method, and has a small contact area between the semiconductor substrate and the first electrode. An excellent configuration is achieved in which the following can be achieved. Furthermore, since the first electrode penetrates the anti-reflection film by coating the material and baking it, the excellent effect of being able to form interspersed electrodes extremely easily is also achieved.
第１図は本発明の一実施例の太陽電池素子１の
平面図、第２図は第１図の切断面線−から見
た断面図、第３図は第１図の切断面線−から
見た断面図、第４図は本実施例の太陽電池素子１
１を製造する工程を示す断面図、第５図は本実施
例の太陽電池素子１１と従来技術の太陽電池素子
１との特性を説明するグラフ、第６図は従来技術
の太陽電子素子１の構成を示す断面図である。
１１……太陽電池素子、１２……Ｐ形シリコン
基板、１３……N+層、１４……第１層、１５…
…第２層、１６……反射防止膜、１７……第１電
極、１８……第２電極、１９……第１銀ペースト
層、２０……第２銀ペースト層。
FIG. 1 is a plan view of a solar cell element 1 according to an embodiment of the present invention, FIG. 2 is a sectional view taken from the cutting plane line - in FIG. 1, and FIG. 3 is a sectional view taken from the cutting plane line - in FIG. 1. The cross-sectional view shown in FIG. 4 shows the solar cell element 1 of this example.
5 is a graph explaining the characteristics of the solar cell element 11 of this embodiment and the conventional solar cell element 1, and FIG. 6 is a cross-sectional view showing the process of manufacturing the solar cell element 1 of the prior art. FIG. 3 is a sectional view showing the configuration. DESCRIPTION OF SYMBOLS 11... Solar cell element, 12... P-type silicon substrate, 13... N + layer, 14... First layer, 15...
... second layer, 16 ... antireflection film, 17 ... first electrode, 18 ... second electrode, 19 ... first silver paste layer, 20 ... second silver paste layer.
Claims (1)
反射防止膜を備え、 受光面側電極として、 焼成により反射防止膜を貫通する材料から成
り、前記反射防止膜を貫通し反射基板上に達し、
受光面に点在状態で形成され、半導体基板との接
触抵抗が低い第１電極と、 第１電極を共通に接続し、半導体基板とは電気
的に絶縁されて反射防止膜上に形成され、焼成に
より反射防止膜を貫通することのない材料から成
り、反射防止膜とは高密度強度を有する第２電極
とを有して成ることを特徴とする光電変換素子。[Scope of Claims] 1. An anti-reflection film formed by covering a semiconductor substrate on the light-receiving surface side, the electrode on the light-receiving surface side being made of a material that penetrates the anti-reflection film by firing; and reaches the reflective substrate.
first electrodes that are dotted on the light-receiving surface and have low contact resistance with the semiconductor substrate; 1. A photoelectric conversion element comprising a material that does not penetrate through an antireflection film when fired, and the antireflection film includes a second electrode having high density and strength.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61265270A JPS63119273A (en) | 1986-11-06 | 1986-11-06 | Photoelectric converter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61265270A JPS63119273A (en) | 1986-11-06 | 1986-11-06 | Photoelectric converter |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63119273A JPS63119273A (en) | 1988-05-23 |
| JPH0563031B2 true JPH0563031B2 (en) | 1993-09-09 |
Family
ID=17414894
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61265270A Granted JPS63119273A (en) | 1986-11-06 | 1986-11-06 | Photoelectric converter |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63119273A (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2703673B2 (en) * | 1991-05-17 | 1998-01-26 | 三菱電機株式会社 | Semiconductor device |
| WO1992022928A1 (en) * | 1991-06-11 | 1992-12-23 | Mobil Solar Energy Corporation | Improved solar cell and method of making same |
| WO2009150741A1 (en) * | 2008-06-12 | 2009-12-17 | 三菱電機株式会社 | Photovoltaic device manufacturing method |
| JP2013149815A (en) * | 2012-01-20 | 2013-08-01 | Shin Etsu Chem Co Ltd | Solar battery and method of manufacturing the same |
| JP5693503B2 (en) * | 2012-03-23 | 2015-04-01 | 三菱電機株式会社 | Solar cell and method for manufacturing the same |
| JP2015062251A (en) * | 2014-11-28 | 2015-04-02 | 信越化学工業株式会社 | Solar cell and method for manufacturing the same |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60140880A (en) * | 1983-12-28 | 1985-07-25 | Hitachi Ltd | Manufacture of solar cell |
-
1986
- 1986-11-06 JP JP61265270A patent/JPS63119273A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60140880A (en) * | 1983-12-28 | 1985-07-25 | Hitachi Ltd | Manufacture of solar cell |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63119273A (en) | 1988-05-23 |
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