JPH0562953A - Abrasive liquid - Google Patents
Abrasive liquidInfo
- Publication number
- JPH0562953A JPH0562953A JP22420891A JP22420891A JPH0562953A JP H0562953 A JPH0562953 A JP H0562953A JP 22420891 A JP22420891 A JP 22420891A JP 22420891 A JP22420891 A JP 22420891A JP H0562953 A JPH0562953 A JP H0562953A
- Authority
- JP
- Japan
- Prior art keywords
- polishing
- polishing liquid
- alkaline solution
- concentration
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は半導体装置の絶縁膜を研
磨するのに適した研磨液に関する。近年、半導体素子を
分離する素子分離絶縁膜を平坦化する場合や、多層配線
の層間絶縁膜を平坦化する場合に、研磨液を用いて研磨
する方法が試みられている。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a polishing liquid suitable for polishing an insulating film of a semiconductor device. In recent years, a method of polishing with a polishing liquid has been attempted when flattening an element isolation insulating film for separating a semiconductor element or flattening an interlayer insulating film of a multilayer wiring.
【０００２】[0002]
【従来の技術】従来、半導体装置の製造段階で用いられ
る研磨液は、シリコン単結晶を研磨の対象としており、
シリコン酸化膜のような絶縁膜を研磨するには適してい
ない。これは、従来の研磨液は有機化合物を溶解したア
ルカリ溶液を用いているため、絶縁物に対して充分な研
磨速度が得られないからである。このため、コロイダル
シリカ等の砥粒の濃度を濃くしたり、研磨時の圧力を高
くしたりして、研磨速度を速くしようと試みられている
が、研磨速度の飛躍的な向上は困難である。2. Description of the Related Art Conventionally, a polishing liquid used in the manufacturing stage of a semiconductor device is intended to polish a silicon single crystal,
It is not suitable for polishing an insulating film such as a silicon oxide film. This is because the conventional polishing liquid uses an alkaline solution in which an organic compound is dissolved, so that a sufficient polishing rate for an insulator cannot be obtained. Therefore, it has been attempted to increase the polishing rate by increasing the concentration of abrasive grains such as colloidal silica or increasing the pressure during polishing, but it is difficult to dramatically improve the polishing rate. ..
【０００３】図３に、有機化合物を溶解したアルカリ溶
液にコロイダルシリカを混合した市販の研磨液（商品名
Ｎａｌｃｏ２３５０、Ｎａｌｃｏ株式会社製）を用いて
ＳｉＯ2 膜を研磨した場合の研磨速度を示す。研磨加工
条件としては、加工圧力は４００ｇ／ｃｍ2 で、研磨布
にロデールＳＵＢＡ５００（商品名、ロデール株式会社
製）を用いた。コロイダルシリカの濃度が低いと０．２
μｍ／ｈｒ程度の研磨速度であり、コロイダルシリカの
濃度を高くしても０．７μｍ／ｈｒ程度の研磨速度しか
得られないことがわかる。FIG. 3 shows a polishing rate when a SiO 2 film is polished using a commercially available polishing liquid (trade name: Nalco 2350, manufactured by Nalco Co., Ltd.) in which colloidal silica is mixed with an alkaline solution in which an organic compound is dissolved. As the polishing processing conditions, the processing pressure was 400 g / cm 2 , and Rodel SUBA500 (trade name, manufactured by Rodel Co., Ltd.) was used as the polishing cloth. 0.2 when the concentration of colloidal silica is low
It is found that the polishing rate is about μm / hr, and even if the concentration of colloidal silica is increased, only the polishing rate of about 0.7 μm / hr can be obtained.
【０００４】しかも、コロイダルシリカの砥粒の濃度を
濃くすると砥粒の回り込みの均一化が難しく、場所によ
って研磨量が異なって研磨が不均一になるという問題が
発生した。また、ｐＨが１２以上の高アルカリ領域に研
磨液を調整して研磨すると研磨速度を向上させることが
できるが、このような高アルカリ領域では砥粒であるコ
ロイダルシリカが溶解して研磨液組成が変動してしまう
という問題があった。Moreover, if the concentration of abrasive grains of colloidal silica is increased, it is difficult to make the abrasive grains evenly wrap around, and the amount of polishing varies depending on the location, resulting in uneven polishing. Further, the polishing rate can be improved by adjusting the polishing liquid to a highly alkaline region having a pH of 12 or more and polishing, but in such a highly alkaline region, colloidal silica as abrasive grains is dissolved and the polishing liquid composition becomes There was a problem of fluctuating.
【０００５】[0005]
【発明が解決しようとする課題】このように、シリコン
単結晶用の研磨液は絶縁膜に対する研磨速度が遅いとい
う問題があった。研磨速度を速くしようとして砥粒の濃
度を濃くすると研磨が不均一になり、研磨液を高アルカ
リ領域に調整して研磨すると砥粒が溶解されて研磨液組
成が変動するという問題があった。As described above, there is a problem that the polishing liquid for a silicon single crystal has a low polishing rate for the insulating film. When the concentration of the abrasive grains is increased to increase the polishing rate, the polishing becomes non-uniform, and when the polishing liquid is adjusted to a highly alkaline region and polished, the abrasive grains are dissolved and the composition of the polishing liquid varies.
【０００６】本発明の目的は、絶縁膜を高速な研磨速度
で、しかも研磨むらがなく安定して研磨することができ
る研磨液を提供することにある。An object of the present invention is to provide a polishing liquid capable of polishing an insulating film at a high polishing rate and with stable polishing without polishing unevenness.
【０００７】[0007]
【課題を解決するための手段】本発明による研磨液は、
アルカリ溶液中の陽イオンの濃度が、アルカリ溶液中の
ＯＨ- イオンの濃度より濃いことを特徴とする。この研
磨液のアルカリ溶液中の陽イオンは、アルカリ金属の陽
イオン、アルカリ土類金属の陽イオン又はアンモニウム
イオンであることが望ましい。The polishing liquid according to the present invention comprises:
It is characterized in that the concentration of cations in the alkaline solution is higher than the concentration of OH − ions in the alkaline solution. The cation in the alkaline solution of the polishing liquid is preferably an alkali metal cation, an alkaline earth metal cation or an ammonium ion.
【０００８】このアルカリ金属の陽イオンは、ナトリウ
ムイオン又はカリウムイオンであることが望ましい。ま
た、本発明の研磨液はコロイダルシリカ又はシリカの砥
粒を含むことが望ましい。さらに、本発明の研磨液のア
ルカリ溶液のｐＨは９．５から１０．５の範囲内である
ことが望ましい。The alkali metal cation is preferably sodium ion or potassium ion. Further, the polishing liquid of the present invention preferably contains colloidal silica or silica abrasive grains. Further, the pH of the alkaline solution of the polishing liquid of the present invention is preferably in the range of 9.5 to 10.5.
【０００９】[0009]
【作用】本発明によれば、アルカリ溶液中の陽イオンの
濃度をＯＨ- イオンの濃度より濃くすることにより、陽
イオンの作用を有効に利用して絶縁膜の原子結合を効率
よく切断して研磨することができる。したがって、砥粒
濃度を濃くすることなく、絶縁膜を高速な研磨速度で、
しかも研磨むらがなく安定して研磨することができる。According to the present invention, by making the concentration of the cations in the alkaline solution higher than that of the OH − ions, the action of the cations can be effectively utilized to efficiently break the atomic bond of the insulating film. It can be polished. Therefore, without increasing the abrasive grain concentration, the insulating film can be polished at a high polishing rate.
Moreover, there is no unevenness in polishing, and stable polishing can be performed.
【００１０】[0010]
【実施例】本発明の一実施例による研磨液を図１及び図
２を用いて説明する。本実施例では、アルカリ溶液とし
てＫＯＨ溶液を用い、アルカリ溶液中のＫ+ イオン源と
してＫＣｌを用いている。研磨加工条件としては、研磨
液中には砥粒としてコロイダルシリカを０．５重量％混
合し、加工圧力は２００ｇ／ｃｍ2 で、研磨布にロデー
ルＳＵＢＡ５００（商品名、ロデール株式会社製）を用
いた。EXAMPLE A polishing liquid according to an example of the present invention will be described with reference to FIGS. In this embodiment, a KOH solution is used as the alkaline solution and KCl is used as the K + ion source in the alkaline solution. As polishing conditions, 0.5% by weight of colloidal silica is mixed as abrasive grains in the polishing liquid, the processing pressure is 200 g / cm 2 , and the polishing cloth is Rodel SUBA500 (trade name, manufactured by Rodel Co., Ltd.). I was there.
【００１１】なお、本実施例における上述の研磨加工条
件は、図３に示す研磨の場合の研磨加工条件よりコロイ
ダルシリカの濃度は０．５重量％と低く、加工圧力は２
００ｇ／ｃｍ2 と半分にして、研磨速度が上がらないよ
うに設定している。本実施例の研磨液は、ＫＯＨにより
ｐＨを調整した研磨液に１グラム当量のＫＣｌを追加し
て、Ｋ+ イオンの濃度がＯＨ- イオンの濃度より濃くな
るように調整した研磨液である。本実施例の研磨液を用
いてＳｉＯ2 膜を研磨した場合の研磨速度を測定した。
ｐＨを変化させた場合のＳｉＯ2 膜の研磨速度の変化を
図１に実線で示す。The above-mentioned polishing processing conditions in this embodiment have a colloidal silica concentration as low as 0.5% by weight and a processing pressure of 2 compared with the polishing processing conditions shown in FIG.
The polishing rate is set to half at 00 g / cm 2 so that the polishing rate does not increase. The polishing liquid of the present embodiment is a polishing liquid in which 1 gram equivalent of KCl is added to the polishing liquid whose pH is adjusted by KOH so that the concentration of K + ions becomes higher than the concentration of OH − ions. The polishing rate when the SiO 2 film was polished using the polishing liquid of this example was measured.
The change in the polishing rate of the SiO 2 film when the pH is changed is shown by the solid line in FIG.
【００１２】比較例として、ＫＯＨのみを用いてｐＨを
調整した研磨液を用意した。この比較例の研磨液はＫ+
イオンの濃度とＯＨ- イオンの濃度が同じである。比較
例の研磨液を用いて研磨した場合の研磨速度を測定し
た。ｐＨを変化させた場合のＳｉＯ2 膜の研磨速度の変
化を図１に破線で示す。本実施例の場合には、ｐＨの値
に関わりなく研磨速度が０．８μｍ／ｈｒ以上であり、
本実施例では他の研磨加工条件を従来より研磨速度が遅
くなるように設定しているにもかかわらず、従来の研磨
液よりも飛躍的に高い研磨速度を得ることができた。特
に、ｐＨが９．５から１０．５の範囲内では、最大１．
４μｍ／ｈｒもの研磨速度を得ることができた。As a comparative example, a polishing liquid having a pH adjusted using only KOH was prepared. The polishing liquid of this comparative example is K +
The ion concentration and the OH − ion concentration are the same. The polishing rate when polishing was performed using the polishing liquid of Comparative Example was measured. A change in the polishing rate of the SiO 2 film when the pH is changed is shown by a broken line in FIG. In the case of the present embodiment, the polishing rate is 0.8 μm / hr or more regardless of the pH value,
In this example, even though the other polishing conditions were set so that the polishing rate was slower than the conventional polishing rate, a polishing rate significantly higher than that of the conventional polishing liquid could be obtained. Particularly, when the pH is in the range of 9.5 to 10.5, the maximum value is 1.
A polishing rate as high as 4 μm / hr could be obtained.
【００１３】図１に示す実施例の研磨液は、ＫＯＨによ
りｐＨを調整した研磨液に１グラム当量のＫＣｌを追加
したものであったが、追加するＫＣｌの量を変化させた
場合のＳｉＯ2 膜の研磨速度の変化を図２に示す。研磨
液のｐＨは１０．２〜１０．４の範囲内とした。研磨加
工条件は図１の場合と同じで、研磨液中には砥粒として
コロイダルシリカを０．５重量％混合し、加工圧力は２
００ｇ／ｃｍ2 で、研磨布にロデールＳＵＢＡ５００を
用いた。The polishing liquid of the embodiment shown in FIG. 1 was prepared by adding 1 gram equivalent of KCl to the polishing liquid whose pH was adjusted by KOH. However, SiO 2 when the amount of added KCl was changed. The change in the polishing rate of the film is shown in FIG. The pH of the polishing liquid was set in the range of 10.2 to 10.4. The polishing processing conditions are the same as in the case of FIG. 1, 0.5% by weight of colloidal silica as abrasive grains is mixed in the polishing liquid, and the processing pressure is 2
Rodel SUBA500 was used as the polishing cloth at 00 g / cm 2 .
【００１４】図２のグラフから明らかなように、追加す
るＫＣｌの量を増やすとほぼ直線的に研磨速度が速くな
ることがわかった。すなわち、ｐＨが一定の場合（ＯＨ
- イオンの濃度が一定の場合）、Ｋ+ イオンの濃度が濃
くなるほど研磨速度が向上する。上記実施例では、アル
カリ溶液としてＫ+ イオンを含むアルカリ溶液を用いた
が、Ｎａ+ イオン等の他のアルカリ金属の陽イオン、ア
ルカリ土類金属の陽イオン又はアンモニウムイオンを含
むアルカリ溶液でもよい。As is clear from the graph of FIG. 2, it was found that the polishing rate increased almost linearly as the amount of KCl added increased. That is, when the pH is constant (OH
- if the concentration of the ions is constant), the concentration of K + ions becomes higher polishing speed is improved dark. In the above embodiments, an alkaline solution containing K + ions was used as the alkaline solution, but it may be an alkaline solution containing other alkali metal cations such as Na + ions, alkaline earth metal cations, or ammonium ions.
【００１５】また、上記実施例では、砥粒としてコロイ
ダルシリカを用いたが、シリカ等の他の砥粒を用いても
よい。さらに、上記実施例では、ＳｉＯ2 膜を研磨する
場合について示したが、窒化膜や酸化窒化膜などの他の
絶縁膜を研磨する場合にも本発明は有効である。また、
上記実施例におけるコロイダルシリカの濃度、加工圧
力、研磨布等の研磨加工条件は一例であり、他の研磨加
工条件においても本発明は有効である。Although colloidal silica is used as the abrasive grains in the above embodiment, other abrasive grains such as silica may be used. Furthermore, in the above embodiment, the case of polishing the SiO 2 film has been described, but the present invention is also effective when polishing other insulating films such as a nitride film and an oxynitride film. Also,
The concentration of colloidal silica, the processing pressure, and the polishing conditions such as a polishing cloth in the above examples are examples, and the present invention is effective under other polishing conditions.
【００１６】[0016]
【発明の効果】以上の通り、本発明によれば、アルカリ
溶液中の陽イオンの濃度をＯＨ- イオンの濃度より濃く
することにより、陽イオンの作用を有効に利用して絶縁
膜の原子結合を効率よく切断して研磨することができ
る。したがって、砥粒濃度を濃くしたり、加工圧力を大
きくすることなく、絶縁膜を高速な研磨速度で、しかも
研磨むらなく安定して研磨することができる。また、研
磨液のｐＨを高くしなくてもよいので、コロイダルシリ
カのような砥粒の溶解を防止でき、研磨液を組成変動を
防ぐことができる。As described above, according to the present invention, by making the concentration of the cations in the alkaline solution higher than the concentration of the OH − ions, the action of the cations can be effectively utilized and the atomic bond of the insulating film can be effectively utilized. Can be efficiently cut and polished. Therefore, the insulating film can be stably polished at a high polishing rate and without uneven polishing without increasing the concentration of abrasive grains or increasing the processing pressure. Further, since it is not necessary to raise the pH of the polishing liquid, it is possible to prevent the dissolution of abrasive grains such as colloidal silica and prevent the composition of the polishing liquid from changing.
【図１】本発明の一実施例による研磨液におけるｐＨと
研磨速度の関係を示すグラフである。FIG. 1 is a graph showing the relationship between pH and polishing rate in a polishing liquid according to an example of the present invention.
【図２】本発明の一実施例による研磨液における追加Ｋ
Ｃｌ量と研磨速度の関係を示すグラフである。FIG. 2 is an additional K in a polishing liquid according to an embodiment of the present invention.
It is a graph which shows the relationship between Cl amount and polishing rate.
【図３】従来の研磨液におけるコロイダルシリカ濃度と
研磨速度の関係を示すグラフである。FIG. 3 is a graph showing a relationship between a colloidal silica concentration and a polishing rate in a conventional polishing liquid.
Claims (5)
おいて、前記アルカリ溶液中の陽イオンの濃度が、前記
アルカリ溶液中のＯＨ- イオンの濃度より高濃度である
ことを特徴とする研磨液。1. A polishing liquid containing at least an alkaline solution, wherein the concentration of cations in the alkaline solution is higher than the concentration of OH − ions in the alkaline solution.
ルカリ溶液中の陽イオンは、アルカリ金属の陽イオン、
アルカリ土類金属の陽イオン又はアンモニウムイオンで
あることを特徴とする研磨液。2. The polishing liquid according to claim 1, wherein the cation in the alkali solution is an alkali metal cation.
A polishing liquid comprising an alkaline earth metal cation or an ammonium ion.
ルカリ金属の陽イオンは、ナトリウムイオン又はカリウ
ムイオンであることを特徴とする研磨液。3. The polishing liquid according to claim 2, wherein the cation of the alkali metal is sodium ion or potassium ion.
液において、コロイダルシリカ又はシリカの砥粒を含む
ことを特徴とする研磨液。4. The polishing liquid according to claim 1, which contains colloidal silica or abrasive grains of silica.
液において、前記アルカリ溶液のｐＨが９．５から１
０．５の範囲内であることを特徴とする研磨液。5. The polishing liquid according to claim 1, wherein the alkaline solution has a pH of 9.5 to 1.
A polishing liquid having a range of 0.5.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22420891A JPH0562953A (en) | 1991-09-04 | 1991-09-04 | Abrasive liquid |
| US07/937,320 US5376222A (en) | 1991-09-04 | 1992-08-31 | Polishing method for polycrystalline silicon |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22420891A JPH0562953A (en) | 1991-09-04 | 1991-09-04 | Abrasive liquid |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0562953A true JPH0562953A (en) | 1993-03-12 |
Family
ID=16810219
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22420891A Withdrawn JPH0562953A (en) | 1991-09-04 | 1991-09-04 | Abrasive liquid |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0562953A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11302634A (en) * | 1998-04-24 | 1999-11-02 | Hiroaki Tanaka | Polishing composition and method for polishing |
| JPH11330025A (en) * | 1998-03-10 | 1999-11-30 | Internatl Business Mach Corp <Ibm> | Slurry having high selectivity and chemical-mechanical polishing of composite material substrate |
| JP2000008024A (en) * | 1998-06-25 | 2000-01-11 | Hiroaki Tanaka | Grinding composition and grinding processing |
| JP2015533868A (en) * | 2012-08-24 | 2015-11-26 | エコラブ ユーエスエイ インク | How to polish sapphire surface |
-
1991
- 1991-09-04 JP JP22420891A patent/JPH0562953A/en not_active Withdrawn
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11330025A (en) * | 1998-03-10 | 1999-11-30 | Internatl Business Mach Corp <Ibm> | Slurry having high selectivity and chemical-mechanical polishing of composite material substrate |
| US6114249A (en) * | 1998-03-10 | 2000-09-05 | International Business Machines Corporation | Chemical mechanical polishing of multiple material substrates and slurry having improved selectivity |
| JPH11302634A (en) * | 1998-04-24 | 1999-11-02 | Hiroaki Tanaka | Polishing composition and method for polishing |
| JP2000008024A (en) * | 1998-06-25 | 2000-01-11 | Hiroaki Tanaka | Grinding composition and grinding processing |
| JP2015533868A (en) * | 2012-08-24 | 2015-11-26 | エコラブ ユーエスエイ インク | How to polish sapphire surface |
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