JPH0562483B2 - - Google Patents

Info

Publication number
JPH0562483B2
JPH0562483B2 JP3286884A JP3286884A JPH0562483B2 JP H0562483 B2 JPH0562483 B2 JP H0562483B2 JP 3286884 A JP3286884 A JP 3286884A JP 3286884 A JP3286884 A JP 3286884A JP H0562483 B2 JPH0562483 B2 JP H0562483B2
Authority
JP
Japan
Prior art keywords
frequency
microwave
fet
gate
frequency divider
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP3286884A
Other languages
Japanese (ja)
Other versions
JPS60177707A (en
Inventor
Kazuhiko Honjo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP3286884A priority Critical patent/JPS60177707A/en
Publication of JPS60177707A publication Critical patent/JPS60177707A/en
Publication of JPH0562483B2 publication Critical patent/JPH0562483B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B19/00Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source
    • H03B19/06Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source by means of discharge device or semiconductor device with more than two electrodes
    • H03B19/14Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source by means of discharge device or semiconductor device with more than two electrodes by means of a semiconductor device

Landscapes

  • Superheterodyne Receivers (AREA)
  • Networks Using Active Elements (AREA)

Description

【発明の詳細な説明】 この発明はマイクロ波分周器に関するものであ
る。近年12GHz帯直接衛星放送システムが実現さ
れる見通しとなつた。このため各家庭に備える受
信機においても、12GHz帯信号を1〜2GHz帯中
間周波数に変換するマイクロ波コンバータが必要
とされる段階になつた。このマイクロ波コンバー
タを構成するには、12GHz帯低雑音増幅器、ミキ
サ、局部発振器が必要となる。この中で局部発振
器の周波数がいかに安定させるかということが重
要な研究課題となつている。局部発振周波数を安
定化するには通常3つの方法が考えられる。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a microwave frequency divider. In recent years, it is expected that a 12GHz band direct satellite broadcasting system will be realized. For this reason, we have reached the stage where microwave converters that convert 12 GHz band signals to 1 to 2 GHz band intermediate frequencies are required in receivers installed in each home. To configure this microwave converter, a 12GHz band low-noise amplifier, mixer, and local oscillator are required. Among these, an important research topic is how to stabilize the frequency of the local oscillator. Generally, three methods can be considered to stabilize the local oscillation frequency.

(1) 安定化共振器を用いる方法 (2) 安定な低い周波数を逓倍して所望の周波数を
得る方法 (3) 局部発振周波数を低い周波数に分周し、安定
な周波数と位相比較した結果を局部発振器にフ
イードバツクして周波数を安定化する方法 (1)の方法には誘電体共振器や空洞共振器が必要
となるため発振器の形状が大きくなる。さらに、
量産するために発振器をモノリシツクIC化する
ことはまず不可能である。
(1) Using a stabilizing resonator (2) Multiplying a stable low frequency to obtain the desired frequency (3) Dividing the local oscillation frequency into a low frequency and comparing the phase with the stable frequency Method of stabilizing the frequency by feeding back to the local oscillator Method (1) requires a dielectric resonator or a cavity resonator, which increases the size of the oscillator. moreover,
It is almost impossible to make an oscillator into a monolithic IC for mass production.

(2)の方法は比較的簡単であるが、多くの逓倍を
行なわなければならず電力効率が良くない。
Method (2) is relatively simple, but it requires a lot of multiplication and is not power efficient.

(3)の方法は回転的に複雑になるが、効率よく周
波数安定化が計れる。さらにモノリシツクIC化
に適している。
Method (3) is rotationally complicated, but it can efficiently stabilize the frequency. Furthermore, it is suitable for monolithic IC.

以上より局部発振周波数安定化のためには(3)の
方法が最も適している。この(3)の方法を実現する
ために12GHz帯で動作する分周器が必要である。
従来マイクロ波帯での分周には第1図に示す再生
分周器が用いられている。第1図において、入力
端子21に入力した周波数の信号はミキサ22
の第1の入力端子に加えられ、ミキサ出力は周波
数の信号を遮断するフイルタ23を介して増幅
器24に入力され、増幅器出力の一部はミキサの
第2の入力端子に加えられ、周波数/2に関して
は帰還ループが形成されている。このような再生
分周器により、出力端子25には/2はが得られ
る。
From the above, method (3) is most suitable for stabilizing the local oscillation frequency. To realize method (3), a frequency divider that operates in the 12GHz band is required.
Conventionally, a regenerative frequency divider shown in FIG. 1 has been used for frequency division in the microwave band. In FIG. 1, the frequency signal input to the input terminal 21 is sent to the mixer 22.
The mixer output is input to the amplifier 24 via a filter 23 that cuts off the frequency signal, and a part of the amplifier output is applied to the second input terminal of the mixer, and the mixer output is input to the amplifier 24 through a filter 23 that cuts off the frequency signal. A feedback loop is formed. With such a regenerative frequency divider, /2 is obtained at the output terminal 25.

しかしながら、第1図の再生分周器ではフイル
タ3を構成しなければならず装置が大型化すると
いう欠点があつた。
However, the regenerative frequency divider shown in FIG. 1 has the disadvantage that a filter 3 must be provided, which increases the size of the device.

本発明の目的は前記欠点を除去したマイクロ波
分周器を提供することにある。
SUMMARY OF THE INVENTION An object of the present invention is to provide a microwave frequency divider which eliminates the above-mentioned drawbacks.

本発明によれば、ドレイン電極には並列抵抗
RLとシングルゲートFETのゲート電極とが接続
され、第1(または第2)のゲート電極には信号
周波数帯無損失整合回路が接続され、第2(また
は第1)のゲート電極と前記シングルゲート
FETのドレイン電極との間には抵抗帰還回路が
接続されてなるデユアルゲートFETをもつて構
成されるマイクロ波分周器において、前記シング
ルゲートFETの入力容量CGとRLから決まる高域
遮断周波数C =1/2πCGRLが前記信号周波数帯より低く、かつ 前記信号周波数帯の1/2より高く選ばれているこ
とを特徴とするマイクロ波分周器が得られる。
According to the present invention, the drain electrode has a parallel resistance.
R L is connected to the gate electrode of the single gate FET, a signal frequency band lossless matching circuit is connected to the first (or second) gate electrode, and the second (or first) gate electrode and the single gate FET are connected to each other. Gate
In a microwave frequency divider configured with a dual gate FET with a resistive feedback circuit connected between the drain electrode of the FET, the high-frequency cutoff is determined by the input capacitances C G and R L of the single gate FET. A microwave frequency divider is obtained, characterized in that the frequency C = 1/2πC G R L is selected to be lower than the signal frequency band and higher than 1/2 of the signal frequency band.

このように本発明においては、フイルタを設け
る必要がないマイクロ波分周器が得られるため、
装置を小型化することが可能になり、モノリシツ
クIC化も容易となるため、直接衛星放送受信シ
ステムにおけるコンバータ等においてその効果は
極めて大きい。
In this way, the present invention provides a microwave frequency divider that does not require a filter.
Since it becomes possible to miniaturize the device and it is easy to make it into a monolithic IC, the effect is extremely large in converters and the like in direct satellite broadcasting receiving systems.

第2図、第3図は本発明の実施例であるマイク
ロ波分周器の高周波等価回路である。第2図にお
いて信号入力端子1とデユアルゲートFET3の
第1のゲート電極4との間には信号周波数()
帯の無損失整合回路2が接続され、ドレイン電極
6には並列抵抗(RL)7およびシングルゲート
FET14のゲート電極8が接続されている。シ
ングルゲートFETのドレイン電極9と前記デユ
アルゲートFETの第2のゲート電極5との間に
は帰還抵抗(R2)12が設けられている。ドレ
イン電極は出力端子13および並列抵抗(R1
11を備えている。ソース電極15および10は
接地されている。第3図は、第2図における信号
入力端子を第2のゲート電極5側に設け、R2
よる帰還を第1のゲート電極4側に設けたマイク
ロ波分周器である。第2図、第3図においてドレ
イン電極6から負荷側を見たインピーダンスZL
RLとゲート・ソース間容量CGSの並列回路で表わ
される。
FIGS. 2 and 3 are high-frequency equivalent circuits of a microwave frequency divider according to an embodiment of the present invention. In FIG. 2, the signal frequency () is connected between the signal input terminal 1 and the first gate electrode 4 of the dual gate FET 3.
A lossless matching circuit 2 is connected to the drain electrode 6, and a parallel resistor (R L ) 7 and a single gate are connected to the drain electrode 6.
The gate electrode 8 of the FET 14 is connected. A feedback resistor (R 2 ) 12 is provided between the drain electrode 9 of the single-gate FET and the second gate electrode 5 of the dual-gate FET. The drain electrode is the output terminal 13 and the parallel resistance (R 1 )
It is equipped with 11. Source electrodes 15 and 10 are grounded. FIG. 3 shows a microwave frequency divider in which the signal input terminal in FIG. 2 is provided on the second gate electrode 5 side, and the feedback by R 2 is provided on the first gate electrode 4 side. In Figures 2 and 3, the impedance Z L when looking from the drain electrode 6 to the load side is
It is represented by a parallel circuit of R L and gate-source capacitance C GS .

したがつて ZL=RL/1+jwRLCGS (1) と表わされる。ここでRLCGS=1/2πCとすると ZL=RL/1+j/C (2) と書ける。(2)式よりがCより高くなるとZLはし
だいに小さくなり0に近づく。一方がCより低
いとZLはほぼRLに等しくなる。したがつてC
信号周波数帯と信号周波数帯の1/2の間に設定す
れば、信号周波数帯の1/2の周波数はシングルゲ
ートFETによつて増幅されるが、信号周波帯は
増幅されない。またデユアルゲートFETはミキ
サとしての機能を有する。したがつて本発明の実
施例である第2図、第3図の回路は第1図に示さ
れるマイクロ波分周器と等価な機能を有する。
Therefore, it is expressed as Z L =R L /1+jwR L C GS (1). Here, if R L C GS = 1/2π C , it can be written as Z L = R L /1+j/ C (2). As Equation (2) becomes higher than C , Z L gradually decreases and approaches 0. If one is lower than C , Z L will be approximately equal to R L. Therefore, if C is set between the signal frequency band and 1/2 of the signal frequency band, the frequency of 1/2 of the signal frequency band will be amplified by the single gate FET, but the signal frequency band will not be amplified. . The dual gate FET also functions as a mixer. Therefore, the circuits shown in FIGS. 2 and 3, which are embodiments of the present invention, have a function equivalent to that of the microwave frequency divider shown in FIG.

このような本発明においては、ミキサと増幅器
の間にフイルタを設けなくてもマイクロ波分周器
を構成することが可能であり、装置を小型化する
ことができる。このためモノリシツクIC化にも
適しており、マイクロ波装置、特に量産化が要求
される12GHz帯直接衛星放送装置においてその効
果は著しい。
According to the present invention, it is possible to configure a microwave frequency divider without providing a filter between the mixer and the amplifier, and the device can be miniaturized. For this reason, it is suitable for use in monolithic ICs, and its effects are remarkable in microwave equipment, especially in 12GHz band direct satellite broadcasting equipment, which requires mass production.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は従来のマイクロ波再生分周器の構成図
で、第2図、第3図は本発明の実施例であるマイ
クロ波再生分周器の高周波等価回路である。図に
おいて、22はミキサ、23はフイルタ、24は
増幅器、3はデユアルゲートFET、14はシン
グルゲートFET、7,11,12は抵抗、2は
整合回路である。
FIG. 1 is a block diagram of a conventional microwave regenerative frequency divider, and FIGS. 2 and 3 are high frequency equivalent circuits of a microwave regenerative frequency divider according to an embodiment of the present invention. In the figure, 22 is a mixer, 23 is a filter, 24 is an amplifier, 3 is a dual gate FET, 14 is a single gate FET, 7, 11, 12 are resistors, and 2 is a matching circuit.

Claims (1)

【特許請求の範囲】 1 ドレイン電極には並列抵抗RLとシングルゲ
ートFETのゲート電極とが接続され、第1(また
は第2)のゲート電極には信号周波数帯無損失整
合回路が接続され、第2(または第1)のゲート
電極と前記シングルゲートFETのドレイン電極
との間には抵抗帰還回路が接続されてなるデユア
ルゲートFETをもつて構成されるマイクロ波分
周器において、前記シングルゲートFETの入力
容量CGとRLから決まる高域遮断周波数C
1/2πCGRLが前記信号周波数帯より低くかつ前記信 号周波数帯の1/2より高く選ばれていることを特
徴とするマイクロ波分周器。
[Claims] 1. A parallel resistor R L and a gate electrode of a single gate FET are connected to the drain electrode, a signal frequency band lossless matching circuit is connected to the first (or second) gate electrode, In a microwave frequency divider configured with a dual gate FET in which a resistive feedback circuit is connected between a second (or first) gate electrode and a drain electrode of the single gate FET, High cutoff frequency C = determined by FET input capacitance C G and R L
A microwave frequency divider characterized in that 1/2πC G R L is selected to be lower than the signal frequency band and higher than 1/2 of the signal frequency band.
JP3286884A 1984-02-23 1984-02-23 Microwave frequency divider Granted JPS60177707A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3286884A JPS60177707A (en) 1984-02-23 1984-02-23 Microwave frequency divider

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3286884A JPS60177707A (en) 1984-02-23 1984-02-23 Microwave frequency divider

Publications (2)

Publication Number Publication Date
JPS60177707A JPS60177707A (en) 1985-09-11
JPH0562483B2 true JPH0562483B2 (en) 1993-09-08

Family

ID=12370834

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3286884A Granted JPS60177707A (en) 1984-02-23 1984-02-23 Microwave frequency divider

Country Status (1)

Country Link
JP (1) JPS60177707A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2616984A1 (en) * 1987-06-22 1988-12-23 Enertec Device for harmonic conversion of ultra-high-frequency signal

Also Published As

Publication number Publication date
JPS60177707A (en) 1985-09-11

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